JP2015220303A - Wafer processing method and intermediate member - Google Patents

Wafer processing method and intermediate member Download PDF

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Publication number
JP2015220303A
JP2015220303A JP2014101965A JP2014101965A JP2015220303A JP 2015220303 A JP2015220303 A JP 2015220303A JP 2014101965 A JP2014101965 A JP 2014101965A JP 2014101965 A JP2014101965 A JP 2014101965A JP 2015220303 A JP2015220303 A JP 2015220303A
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wafer
intermediate member
support plate
grinding
outer peripheral
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JP6385133B2 (en
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プリワッサー カール
Priewasser Karl
プリワッサー カール
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Disco Corp
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Disco Abrasive Systems Ltd
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Priority to JP2014101965A priority Critical patent/JP6385133B2/en
Priority to TW104111929A priority patent/TWI660416B/en
Priority to KR1020150061249A priority patent/KR102455708B1/en
Priority to CN201510249266.4A priority patent/CN105097631B/en
Priority to DE102015208977.0A priority patent/DE102015208977A1/en
Publication of JP2015220303A publication Critical patent/JP2015220303A/en
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Publication of JP6385133B2 publication Critical patent/JP6385133B2/en
Priority to KR1020210076724A priority patent/KR102432506B1/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02024—Mirror polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
    • H01L2221/68386—Separation by peeling
    • H01L2221/6839—Separation by peeling using peeling wedge or knife or bar

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Grinding Of Cylindrical And Plane Surfaces (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a wafer processing method that can easily exfoliate a protection member while neither starch nor adhesive agent is left between bumps when the protection member is exfoliated.SOLUTION: A method of processing a wafer having, on the surface thereof, a center area containing plural devices each having plural bumps formed thereon and an outer peripheral extra area surrounding the center area, comprises: an intermediate member preparing step of preparing an intermediate member having a flexible member corresponding to the center area of the wafer and an adhesive member disposed on the outer peripheral edge of the flexible member; a step of adhesively attaching the intermediate member on a support plate through the adhesive member, and adhesively attaching the wafer through the adhesive member on the intermediate member adhering onto the support plate while the center area of the wafer is brought into contact with the flexible member; a grinding step for grinding the back surface of the wafer after the adhesively attaching step is executed; and an exfoliating step of exfoliating the wafer from the support plate after the grinding step is executed.

Description

本発明は各デバイスが複数のバンプを有するウェーハの加工方法及び該加工方法で使用される中間部材に関する。   The present invention relates to a wafer processing method in which each device has a plurality of bumps, and an intermediate member used in the processing method.

ＩＣ、ＬＳＩ等の数多くのデバイスが表面に形成され、且つ個々のデバイスが格子状に形成された複数の分割予定ライン（ストリート）によって区画された半導体ウェーハは、研削装置によって裏面が研削されて所定の厚みに加工された後、切削装置（ダイシング装置）によって分割予定ラインを切削して個々のデバイスに分割され、分割されたデバイスは携帯電話、パソコン等の各種電子機器に広く利用されている。   A semiconductor wafer defined by a plurality of division lines (streets) in which a large number of devices such as IC and LSI are formed on the surface and each device is formed in a lattice shape is ground on the back surface by a grinding device to be predetermined. After being processed to a thickness of 1, the dividing line is cut by a cutting device (dicing device) to be divided into individual devices, and the divided devices are widely used in various electronic devices such as mobile phones and personal computers.

ウェーハの裏面を研削する研削装置は、ウェーハを保持するチャックテーブルと、該チャックテーブルに保持されたウェーハを研削する研削砥石を有する研削ホイールが回転可能に装着された研削手段とを備えており、ウェーハを高精度に所望の厚みに研削できる。   A grinding apparatus for grinding a back surface of a wafer includes a chuck table for holding the wafer, and a grinding means on which a grinding wheel having a grinding wheel for grinding the wafer held on the chuck table is rotatably mounted. The wafer can be ground to a desired thickness with high accuracy.

ウェーハの裏面を研削するには、多数のデバイスが形成されたウェーハの表面側をチャックテーブルで吸引保持しなければならないため、デバイスを傷つけないようにウェーハの表面には通常保護テープが貼着される（例えば、特開平５−１９８５４２号公報参照）。   In order to grind the backside of the wafer, the front side of the wafer on which a large number of devices are formed must be sucked and held by a chuck table, so a protective tape is usually applied to the surface of the wafer to prevent damage to the devices. (See, for example, JP-A-5-198542).

近年、電子機器は小型化、薄型化の傾向にあり、組み込まれる半導体デバイスも小型化、薄型化が要求されている。ところが、ウェーハの裏面を研削して例えば１００μｍ以下、更には５０μｍ以下にウェーハを薄化すると、剛性が著しく低下するためその後のハンドリングが非常に困難になる。更に、場合によってはウェーハに反りが生じ、反りによってウェーハ自体が破損してしまうという恐れもある。   In recent years, electronic devices are becoming smaller and thinner, and the semiconductor devices to be incorporated are also required to be smaller and thinner. However, if the wafer is thinned to a thickness of, for example, 100 μm or less, and further 50 μm or less by grinding the back surface of the wafer, the rigidity is remarkably lowered and subsequent handling becomes very difficult. Further, in some cases, the wafer is warped, and the wafer itself may be damaged by the warp.

このような問題を解決するために、ウェーハサポートシステム（ＷＳＳ）が採用されている。ＷＳＳでは、予め剛性のある保護部材に接着剤を用いてウェーハの表面側を貼付した後、ウェーハの裏面を研削して所定厚みに薄化する（例えば、特開２００４−２０７６０６号公報参照）。   In order to solve such problems, a wafer support system (WSS) is employed. In WSS, a front surface side of a wafer is attached to a rigid protective member in advance using an adhesive, and then the back surface of the wafer is ground to a predetermined thickness (see, for example, Japanese Patent Application Laid-Open No. 2004-207606).

特開平５−１９８５４２号公報JP-A-5-198542 特開２００４−２０７６０６号公報JP 2004-207606 A

しかし、ウェーハを保護テープやＷＳＳの保護部材から破損させることなく剥離するのは難しく、特に近年では、ウェーハの大口径化や仕上げ厚みが薄化の傾向にあることから、ウェーハを破損させることなく保護部材から剥離することが難しくなっている。また、ウェーハを保護部材から剥離させた後、デバイスの表面に糊や接着剤が残存してしまうという問題もある。   However, it is difficult to peel the wafer from the protective tape or WSS protective member without damaging it. Especially in recent years, there is a tendency to increase the diameter of the wafer and reduce the finished thickness, so that the wafer is not damaged. It is difficult to peel from the protective member. There is also a problem that glue or adhesive remains on the surface of the device after the wafer is peeled off from the protective member.

特に、各デバイス上に複数のバンプが形成されたウェーハでは、バンプの凹凸によって保護部材上にウェーハを平坦に貼着することが難しい上、バンプ間に糊や接着剤が残存してしまうという問題がある。   In particular, in a wafer in which a plurality of bumps are formed on each device, it is difficult to stick the wafer flat on the protective member due to bump irregularities, and glue or adhesive remains between the bumps. There is.

本発明はこのような点に鑑みてなされたものであり、その目的とするところは、保護部材剥離の際にバンプ間に糊や接着剤を残存させることなく、保護部材の剥離も容易なウェーハの加工方法を提供することである。   The present invention has been made in view of the above points, and the object of the present invention is to easily remove the protective member without leaving glue or adhesive between the bumps when the protective member is peeled off. It is to provide a processing method.

請求項１記載の発明によると、それぞれ複数のバンプが形成された複数のデバイスが配設された中央領域と該中央領域を囲繞する外周余剰領域とを表面に有するウェーハの加工方法であって、ウェーハの該中央領域に対応した柔軟部材と、該柔軟部材の外周縁に配設された接着部材とを有する中間部材を準備する中間部材準備ステップと、サポートプレート上に該中間部材を該接着部材を介して貼着するとともに、該サポートプレート上に貼着された該中間部材上に、ウェーハの該中央領域を該柔軟部材に当接させた状態で該接着部材を介してウェーハを貼着する貼着ステップと、該貼着ステップを実施した後、ウェーハの裏面を研削する研削ステップと、該研削ステップを実施した後、該サポートプレートからウェーハを剥離する剥離ステップと、を備えたことを特徴とするウェーハの加工方法が提供される。   According to the first aspect of the present invention, there is provided a wafer processing method having a central region in which a plurality of devices each having a plurality of bumps are disposed and an outer peripheral surplus region surrounding the central region on the surface. An intermediate member preparing step of preparing an intermediate member having a flexible member corresponding to the central region of the wafer and an adhesive member disposed on an outer peripheral edge of the flexible member; and the intermediate member on the support plate And sticking the wafer on the intermediate member stuck on the support plate via the adhesive member in a state where the central region of the wafer is in contact with the flexible member. A sticking step, a grinding step for grinding the back surface of the wafer after performing the sticking step, and a peeling step for peeling the wafer from the support plate after performing the grinding step. Processing method of the wafer, characterized by comprising a flop, is provided.

請求項３記載の発明によると、それぞれ複数のバンプが形成された複数のデバイスが配設された中央領域と該中央領域を囲繞する外周余剰領域とを表面に有するウェーハの加工方法で用いられる中間部材であって、ウェーハの該中央領域に対応した柔軟部材と、該柔軟部材の外周縁に配設されたウェーハの該外周余剰領域に対応した接着部材と、を備えたことを特徴とする中間部材が提供される。   According to a third aspect of the present invention, an intermediate used in a method for processing a wafer having a central region where a plurality of devices each having a plurality of bumps are disposed and an outer peripheral surplus region surrounding the central region on the surface. An intermediate member comprising: a flexible member corresponding to the central region of the wafer; and an adhesive member corresponding to the outer peripheral surplus region of the wafer disposed on the outer peripheral edge of the flexible member. A member is provided.

本発明のウェーハの加工方法によると、貼着されるウェーハの中央領域に対応した柔軟部材と、柔軟部材の外周縁に配設された接着部材とを備えた中間部材を介してサポートプレート上にウェーハを貼着する。   According to the wafer processing method of the present invention, on the support plate through the intermediate member including the flexible member corresponding to the central region of the wafer to be bonded and the adhesive member disposed on the outer peripheral edge of the flexible member. Affix the wafer.

従って、ウェーハの中央領域には糊や接着剤を介在させることなく中間部材を介してウェーハをサポートプレート上に貼着するため、ウェーハをサポートプレートから剥離した際にバンプ間に糊や接着剤を残存させることがない。   Therefore, in order to attach the wafer on the support plate via the intermediate member without interposing glue or adhesive in the central area of the wafer, glue or adhesive is not applied between the bumps when the wafer is peeled off from the support plate. It does not remain.

柔軟部材の外周縁に配設された接着部材でウェーハはサポートプレート上に接着されているため、ウェーハのサポートプレートからの剥離も容易である。また、ウェーハの中央領域には柔軟部材が当接した状態でウェーハがサポートプレートに貼着されるため、バンプの凹凸が柔軟部材で吸収されてウェーハの裏面が平坦化した状態でサポートプレートに貼着される。   Since the wafer is bonded onto the support plate by the adhesive member disposed on the outer peripheral edge of the flexible member, the wafer can be easily peeled off from the support plate. In addition, since the wafer is attached to the support plate with the flexible member in contact with the central region of the wafer, the bump unevenness is absorbed by the flexible member and the back surface of the wafer is flattened on the support plate. Worn.

本発明の加工方法を実施するのに適したウェーハの斜視図である。It is a perspective view of a wafer suitable for carrying out the processing method of the present invention. 貼着ステップで貼着されるウェーハ、中間部材及びサポートプレートの断面図である。It is sectional drawing of the wafer, intermediate member, and support plate which are stuck by a sticking step. 図３（Ａ）は柔軟部材の全周に接着部材が配設された中間部材の平面図、図３（Ｂ）は柔軟部材の外周の複数個所に接着部材が配設された中間部材の平面図である。3A is a plan view of the intermediate member in which the adhesive member is disposed on the entire circumference of the flexible member, and FIG. 3B is a plan view of the intermediate member in which the adhesive member is disposed at a plurality of locations on the outer periphery of the flexible member. FIG. 貼着ステップ実施後のウェーハ、中間部材及びサポートプレートの断面図である。It is sectional drawing of a wafer after a sticking step implementation, an intermediate member, and a support plate. 図５（Ａ）はサポートプレートに保護テープを貼着した状態の断面図、図５（Ｂ）はバイト切削装置で保護テープを切削して平坦化する様子を示す一部断面側面図である。FIG. 5A is a cross-sectional view of a state where a protective tape is attached to a support plate, and FIG. 5B is a partial cross-sectional side view showing a state where the protective tape is cut and flattened by a cutting tool. 研削ステップを示す斜視図である。It is a perspective view which shows a grinding step. 転写ステップを示す断面図である。It is sectional drawing which shows a transfer step. 剥離ステップの第１実施形態を示す断面図である。It is sectional drawing which shows 1st Embodiment of a peeling step. 剥離ステップの第２実施形態を示す断面図である。It is sectional drawing which shows 2nd Embodiment of a peeling step.

以下、本発明の実施形態を図面を参照して詳細に説明する。図１を参照すると、本発明の加工方法により加工するのに適した半導体ウェーハ（以下、単にウェーハと略称することがある）１１の斜視図が示されている。   Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. Referring to FIG. 1, there is shown a perspective view of a semiconductor wafer (hereinafter sometimes simply referred to as a wafer) 11 suitable for processing by the processing method of the present invention.

半導体ウェーハ１１は表面１１ａ及び裏面１１ｂを有しており、表面１１ａには複数のストリート（分割予定ライン）１３が直交して形成されており、ストリート１３によって区画された各領域にそれぞれデバイス１５が形成されている。半導体ウェーハ１１は、例えば厚み７００μｍのシリコンウェーハから構成される。   The semiconductor wafer 11 has a front surface 11 a and a back surface 11 b, and a plurality of streets (division planned lines) 13 are formed orthogonally on the front surface 11 a, and the devices 15 are respectively provided in the areas partitioned by the streets 13. Is formed. The semiconductor wafer 11 is composed of a silicon wafer having a thickness of 700 μm, for example.

図１の拡大図に示すように、各デバイス１５の四辺には複数の突起状のバンプ１７が形成されている。各デバイス１５の四辺にバンプ１７が形成されているので、半導体ウェーハ１１はバンプ１７が形成されている中央領域（バンプ形成領域）１９と、中央領域１９を囲繞する外周余剰領域（外周バンプ未形成領域）２１を有している。   As shown in the enlarged view of FIG. 1, a plurality of protruding bumps 17 are formed on the four sides of each device 15. Since the bumps 17 are formed on the four sides of each device 15, the semiconductor wafer 11 has a central region (bump forming region) 19 where the bumps 17 are formed, and an outer peripheral surplus region surrounding the central region 19 (outer peripheral bumps are not formed). Region) 21.

図２を参照すると、ウェーハ１１及びウェーハ１１の表面１１ａに貼着されるサポートプレート１２及び中間部材１４の断面図が示されている。サポートプレート１２は、例えばシリコンウェーハ又はガラスウェーハから構成される。   Referring to FIG. 2, a cross-sectional view of the wafer 11 and the support plate 12 and the intermediate member 14 attached to the surface 11 a of the wafer 11 is shown. The support plate 12 is made of, for example, a silicon wafer or a glass wafer.

尚、ウェーハ１１の外周部には表面から裏面に至る円弧状の面取り部１１ｅが形成されており、後に説明する研削ステップでウェーハ１１の裏面１１ｂを研削してウェーハ１１を所定の厚みに形成すると、面取り部１１ｅの一部によりウェーハ１１の外周部にシャープエッジが形成されることになる。その対策として、少なくとも研削ステップを実施するまでにウェーハ１１の面取り部１１ｅの一部を切削ブレードで円形に除去するエッジトリミングを実施しておくのが好ましい。   An arc-shaped chamfered portion 11e extending from the front surface to the back surface is formed on the outer peripheral portion of the wafer 11. When the wafer 11 is formed to a predetermined thickness by grinding the back surface 11b of the wafer 11 in a grinding step described later. A sharp edge is formed on the outer peripheral portion of the wafer 11 by a part of the chamfered portion 11e. As a countermeasure, it is preferable to perform edge trimming in which a part of the chamfered portion 11e of the wafer 11 is removed in a circular shape with a cutting blade until at least the grinding step is performed.

中間部材１４は、ゴム又はスポンジゴム等から形成された柔軟部材１６と、柔軟部材１６の外周に配設された接着部材１８とから構成される。接着部材１８の厚みｔ１は１〜５ｍｍ、より好ましくは２〜３ｍｍ程度である。接着部材１８は例えば接着剤から形成され、後で説明する貼着ステップ実施後、ウェーハ１１に熱処理を行う場合には、接着部材１８として耐熱性を有するものを選択する。   The intermediate member 14 includes a flexible member 16 made of rubber or sponge rubber, and an adhesive member 18 disposed on the outer periphery of the flexible member 16. The thickness t1 of the adhesive member 18 is about 1 to 5 mm, more preferably about 2 to 3 mm. The adhesive member 18 is formed of, for example, an adhesive, and when the wafer 11 is subjected to heat treatment after performing the attaching step described later, an adhesive member 18 having heat resistance is selected.

図３（Ａ）に示すように、中間部材１４は、円形の柔軟部材１６と、柔軟部材１６の全外周に渡って連続的に配設された接着部材１８とから構成される。或いは、図３（Ｂ）に示すように、中間部材１４Ａは、円形の柔軟部材１６と、柔軟部材１６の外周の複数箇所に配設された接着部材１８とから構成される。   As illustrated in FIG. 3A, the intermediate member 14 includes a circular flexible member 16 and an adhesive member 18 that is continuously disposed over the entire outer periphery of the flexible member 16. Alternatively, as illustrated in FIG. 3B, the intermediate member 14 </ b> A includes a circular flexible member 16 and adhesive members 18 disposed at a plurality of locations on the outer periphery of the flexible member 16.

本発明のウェーハの加工方法では、中間部材１４を準備した後、図４に示すように、サポートプレート１２上に中間部材１４を接着部材１８を介して貼着するとともに、サポートプレート１２上に貼着された中間部材１４上にウェーハ１１の中央領域（バンプ形成領域）１９を柔軟部材１６に当接させた状態で、接着部材１８を介してウェーハ１１を中間部材１４に貼着する貼着ステップを実施する。この貼着ステップを実施したことにより、ウェーハ１１は中間部材１４の外周に配設された接着部材１８を介してのみサポートプレート１２に貼着されていることになる。   In the wafer processing method of the present invention, after the intermediate member 14 is prepared, the intermediate member 14 is attached to the support plate 12 via the adhesive member 18 and attached to the support plate 12 as shown in FIG. A sticking step of sticking the wafer 11 to the intermediate member 14 via the adhesive member 18 in a state where the central region (bump forming region) 19 of the wafer 11 is in contact with the flexible member 16 on the attached intermediate member 14. To implement. By performing this sticking step, the wafer 11 is stuck to the support plate 12 only via the adhesive member 18 disposed on the outer periphery of the intermediate member 14.

ウェーハ１１の裏面１１ｂを研削する研削ステップを実施する前に、ウェーハ１１の裏面１１ｂの精度を出すために、図５（Ａ）に示すように、サポートプレート１２に基材と糊層からなるテープ２０を貼着するのが好ましい。   Before performing the grinding step of grinding the back surface 11b of the wafer 11, in order to increase the accuracy of the back surface 11b of the wafer 11, as shown in FIG. It is preferable to stick 20.

テープ貼着後、図５（Ｂ）に示すように、バイト切削装置でテープ２０を切削して平坦化する。図５（Ｂ）において、２２はバイト切削装置のバイト切削ユニットであり、回転駆動されるスピンドル２４と、スピンドル２４の先端に固定されたマウント２６と、マウント２６に着脱可能に装着されたバイトホイール２８とを含んでいる。バイトホイール２８には、先端にダイアモンドからなる切り刃を有するバイト工具３０が着脱可能に取り付けられている。   After sticking the tape, as shown in FIG. 5B, the tape 20 is cut and flattened with a cutting tool. In FIG. 5B, reference numeral 22 denotes a cutting tool unit of a cutting tool, a spindle 24 that is rotationally driven, a mount 26 that is fixed to the tip of the spindle 24, and a cutting tool wheel that is detachably mounted on the mount 26. 28. A bite tool 30 having a diamond cutting edge at the tip is detachably attached to the bite wheel 28.

テープ２０の平坦化ステップでは、バイト切削装置のチャックテーブル３２でウェーハ１１を吸引保持しテープ２０を露出させる。そして、バイト工具３０をテープ２０に所定深さ切り込む高さ位置に位置付けた後、バイトホイール２８を例えば約２０００ｒｐｍで回転しつつ、チャックテーブル３２を矢印Ａ方向に所定の送り速度で移動させながら、バイト工具３０でテープ２０を旋回切削する。   In the flattening step of the tape 20, the wafer 11 is sucked and held by the chuck table 32 of the cutting tool to expose the tape 20. Then, after positioning the cutting tool 30 at a height position where the tape tool 20 is cut into the tape 20 by a predetermined depth, while rotating the cutting wheel 28 at, for example, about 2000 rpm, while moving the chuck table 32 in the arrow A direction at a predetermined feeding speed, The tape 20 is turned with a cutting tool 30.

この旋回切削時には、チャックテーブル３２は回転させずに矢印Ａ方向に加工送りする。テープ２０の平坦化ステップを実施すると、ウェーハ１１の裏面１１ｂとテープ２０の表面との間の十分な平行度が得られたことになる。   During this turning cutting, the chuck table 32 is processed and fed in the direction of arrow A without rotating. When the flattening step of the tape 20 is performed, sufficient parallelism between the back surface 11b of the wafer 11 and the surface of the tape 20 is obtained.

しかし、サポートプレート１２上に中間部材１４を介してウェーハ１１を貼着した時、サポートプレート１２の支持面（下面）とウェーハ１１の裏面１１ｂとの平行度が十分確保されている場合には、サポートプレート１２にテープ２０を必ずしも貼着する必要はない。   However, when the wafer 11 is bonded onto the support plate 12 via the intermediate member 14, when the parallelism between the support surface (lower surface) of the support plate 12 and the back surface 11b of the wafer 11 is sufficiently secured, It is not always necessary to attach the tape 20 to the support plate 12.

図４に示す貼着ステップ実施後、或いは図５（Ｂ）に示すテープ平坦化ステップ実施後、ウェーハ１１の裏面１１ｂを研削する研削ステップを実施する。研削ステップでは、図６に示すように、研削装置のチャックテーブル４８でサポートプレート１２を吸引保持し、ウェーハ１１の裏面１１ｂを露出させる。   After the sticking step shown in FIG. 4 or after the tape flattening step shown in FIG. 5B, a grinding step for grinding the back surface 11b of the wafer 11 is performed. In the grinding step, as shown in FIG. 6, the support plate 12 is sucked and held by the chuck table 48 of the grinding device to expose the back surface 11 b of the wafer 11.

図６において、研削ユニット３６は、回転駆動されるスピンドル３８と、スピンドル３８の先端に固定されたホイールマウント４０と、ホイールマウント４０に複数のねじ４１により着脱可能に装着された研削ホイール４２とを含んでいる。研削ホイール４２は、環状のホイール基台４４と、ホイール基台４４の下端外周部に環状に固着された複数の研削砥石４６とから構成される。   In FIG. 6, the grinding unit 36 includes a spindle 38 that is rotationally driven, a wheel mount 40 that is fixed to the tip of the spindle 38, and a grinding wheel 42 that is detachably attached to the wheel mount 40 with a plurality of screws 41. Contains. The grinding wheel 42 includes an annular wheel base 44 and a plurality of grinding wheels 46 that are annularly fixed to the outer periphery of the lower end of the wheel base 44.

研削ステップでは、チャックテーブル４８を矢印ａで示す方向に例えば３００ｒｐｍで回転しつつ、研削ホイール４２を矢印ｂで示す方向に例えば６０００ｒｐｍで回転させるとともに、図示しない研削ユニット送り機構を駆動して研削ホイール４２の研削砥石４６をウェーハ１１の裏面１１ｂに接触させる。   In the grinding step, while rotating the chuck table 48 in the direction indicated by arrow a at 300 rpm, for example, the grinding wheel 42 is rotated in the direction indicated by arrow b at 6000 rpm, for example, and a grinding unit feed mechanism (not shown) is driven to drive the grinding wheel. The grinding wheel 46 of 42 is brought into contact with the back surface 11 b of the wafer 11.

そして、研削ホイール４２を所定の研削送り速度で下方に所定量研削送りする。接触式又は非接触式の厚み測定ゲージでウェーハ１１の厚さを測定しながら、ウェーハ１１を所定の厚さ（例えば１００μｍ）に研削する。   Then, the grinding wheel 42 is ground and fed downward by a predetermined amount at a predetermined grinding feed speed. The wafer 11 is ground to a predetermined thickness (for example, 100 μm) while measuring the thickness of the wafer 11 with a contact-type or non-contact-type thickness measurement gauge.

尚、この研削ステップは図６に示した実施形態に限定されるものではなく、ウェーハ１１の略半径程度の研削ホイールを使用して、ウェーハ１１の中央領域１９に対応する裏面１１ｂを研削して円形凹部を形成し、外周余剰領域２１に対応する裏面は残存させて円形凹部を囲繞する環状の凸部を形成するようにしても良い。   Note that this grinding step is not limited to the embodiment shown in FIG. 6, and the back surface 11 b corresponding to the central region 19 of the wafer 11 is ground using a grinding wheel of approximately the radius of the wafer 11. A circular concave portion may be formed, and an annular convex portion surrounding the circular concave portion may be formed by leaving the back surface corresponding to the outer peripheral surplus region 21.

研削ステップ実施後、その後のハンドリング性を確保するために、図７に示すように、ウェーハ１１の裏面１１ｂを外周部が環状フレームＦに貼着されたダイシングテープＴに貼着する転写ステップを実施するのが好ましい。   After the grinding step is performed, in order to ensure subsequent handling, a transfer step is performed in which the back surface 11b of the wafer 11 is attached to a dicing tape T whose outer peripheral portion is attached to the annular frame F, as shown in FIG. It is preferable to do this.

転写ステップ実施後、サポートプレート１２からウェーハ１１を剥離する剥離ステップを実施する。この剥離ステップの第１実施形態では、図８（Ａ）に示すように、ウェーハ１１をダイシングテープＴを介して図示しないチャックテーブルで吸引保持しながら、切削ユニット５０で中間部材１４の接着部材１８を切削して除去する。切削ユニット５０は、鉛直方向に配設されたスピンドル５２と、スピンドル５２の先端部に装着された切削ブレード５４とを含んでいる。   After the transfer step, a peeling step for peeling the wafer 11 from the support plate 12 is performed. In the first embodiment of the peeling step, as shown in FIG. 8 (A), the wafer 11 is sucked and held by a chuck table (not shown) via a dicing tape T, and the adhesive member 18 of the intermediate member 14 is used by the cutting unit 50. Is removed by cutting. The cutting unit 50 includes a spindle 52 disposed in the vertical direction and a cutting blade 54 attached to the tip of the spindle 52.

剥離ステップの第１実施形態では、矢印Ａ方向に高速回転する切削ブレード５４を側方から中間部材１４の接着部材１８に切り込ませ、図示しないチャックテーブルを矢印Ｒ１方向に低速で回転することにより接着部材１８を切削して除去する。切削部材１８除去後、図８（Ｂ）に示すように、ダイシングテープＴに貼着されたウェーハ１１からサポートプレート１２を柔軟部材１６と共に剥離する。   In the first embodiment of the peeling step, a cutting blade 54 that rotates at high speed in the direction of arrow A is cut into the adhesive member 18 of the intermediate member 14 from the side, and a chuck table (not shown) is rotated at low speed in the direction of arrow R1. The adhesive member 18 is removed by cutting. After the cutting member 18 is removed, the support plate 12 is peeled together with the flexible member 16 from the wafer 11 adhered to the dicing tape T as shown in FIG.

次に、図９を参照して、剥離ステップの第２実施形態について説明する。本実施形態の剥離ステップでは、水平方向に伸長するスピンドル５２を有する通常の切削ユニット５０Ａを使用する。   Next, a second embodiment of the peeling step will be described with reference to FIG. In the peeling step of the present embodiment, a normal cutting unit 50A having a spindle 52 extending in the horizontal direction is used.

矢印Ａ方向に高速回転する切削ブレード５４をサポートプレート１２の外周部に接着部材１８の下端部近傍まで切り込ませ、図示しないチャックテーブルを矢印Ｒ１方向に低速で回転させることにより、サポートプレート１２の外周部と共に接着部材１８を切削して除去する。   A cutting blade 54 that rotates at a high speed in the direction of arrow A is cut into the outer periphery of the support plate 12 to the vicinity of the lower end of the adhesive member 18, and a chuck table (not shown) is rotated at a low speed in the direction of arrow R 1. The adhesive member 18 is cut and removed together with the outer peripheral portion.

これにより、図８（Ｂ）に示すのと同様に、ダイシングテープＴに貼着されたウェーハ１１からサポートプレート１２を柔軟部材１６とともに除去することができる。   As a result, the support plate 12 can be removed together with the flexible member 16 from the wafer 11 adhered to the dicing tape T, as shown in FIG.

１１ 半導体ウェーハ
１２ サポートプレート
１４ 中間部材
１５ デバイス
１６ 柔軟部材
１７ バンプ
１８ 接着部材
１９ 中央領域（バンプ形成領域）
２０ テープ
２１ 外周余剰領域（バンプ未形成領域）
２２ 切削ユニット
３０ バイト工具
３６ 研削ユニット
４２ 研削ホイール
４６ 研削砥石
５０，５０Ａ 切削ユニット
５４ 切削ブレード 11 Semiconductor wafer 12 Support plate 14 Intermediate member 15 Device 16 Flexible member 17 Bump 18 Adhesive member 19 Central area (bump formation area)
20 Tape 21 Peripheral surplus area (unformed bump area)
22 Cutting unit 30 Bite tool 36 Grinding unit 42 Grinding wheel 46 Grinding wheel 50, 50A Cutting unit 54 Cutting blade

Claims (3)

それぞれ複数のバンプが形成された複数のデバイスが配設された中央領域と該中央領域を囲繞する外周余剰領域とを表面に有するウェーハの加工方法であって、
ウェーハの該中央領域に対応した柔軟部材と、該柔軟部材の外周縁に配設された接着部材とを有する中間部材を準備する中間部材準備ステップと、
サポートプレート上に該中間部材を該接着部材を介して貼着するとともに、該サポートプレート上に貼着された該中間部材上に、ウェーハの該中央領域を該柔軟部材に当接させた状態で該接着部材を介してウェーハを貼着する貼着ステップと、
該貼着ステップを実施した後、ウェーハの裏面を研削する研削ステップと、
該研削ステップを実施した後、該サポートプレートからウェーハを剥離する剥離ステップと、
を備えたことを特徴とするウェーハの加工方法。 A wafer processing method having a central region where a plurality of devices each having a plurality of bumps are disposed and an outer peripheral surplus region surrounding the central region on the surface,
An intermediate member preparing step of preparing an intermediate member having a flexible member corresponding to the central region of the wafer and an adhesive member disposed on an outer peripheral edge of the flexible member;
The intermediate member is attached to the support plate via the adhesive member, and the central region of the wafer is in contact with the flexible member on the intermediate member attached to the support plate. An adhering step of adhering a wafer through the adhesive member;
A grinding step for grinding the back surface of the wafer after performing the attaching step;
A peeling step of peeling the wafer from the support plate after performing the grinding step;
A wafer processing method characterized by comprising: 前記研削ステップを実施した後前記剥離ステップを実施する前に、ウェーハを外周部が環状フレームに貼着されたダイシングテープに貼着する転写ステップを更に備えた請求項１記載のウェーハの加工方法。   The wafer processing method according to claim 1, further comprising a transfer step of attaching the wafer to a dicing tape having an outer peripheral portion attached to an annular frame after the grinding step and before the peeling step. それぞれ複数のバンプが形成された複数のデバイスが配設された中央領域と該中央領域を囲繞する外周余剰領域とを表面に有するウェーハの加工方法で用いられる中間部材であって、
ウェーハの該中央領域に対応した柔軟部材と、
該柔軟部材の外周縁に配設されたウェーハの該外周余剰領域に対応した接着部材と、
を備えたことを特徴とする中間部材。 An intermediate member used in a wafer processing method having a central region where a plurality of devices each having a plurality of bumps are disposed and an outer peripheral surplus region surrounding the central region on the surface,
A flexible member corresponding to the central region of the wafer;
An adhesive member corresponding to the outer peripheral surplus region of the wafer disposed on the outer peripheral edge of the flexible member;
An intermediate member comprising:
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