KR102455708B1 - Wafer processing method and intermediate member - Google Patents

Wafer processing method and intermediate member Download PDF

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KR102455708B1
KR102455708B1 KR1020150061249A KR20150061249A KR102455708B1 KR 102455708 B1 KR102455708 B1 KR 102455708B1 KR 1020150061249 A KR1020150061249 A KR 1020150061249A KR 20150061249 A KR20150061249 A KR 20150061249A KR 102455708 B1 KR102455708 B1 KR 102455708B1
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wafer
adhesive
grinding
support plate
intermediate member
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KR20150131964A (en
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칼 프리바서
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가부시기가이샤 디스코
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02024—Mirror polishing
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
    • H01L2221/68386—Separation by peeling
    • H01L2221/6839—Separation by peeling using peeling wedge or knife or bar

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  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Grinding Of Cylindrical And Plane Surfaces (AREA)

Abstract

보호 부재 박리 시에 범프 사이에 풀이나 접착제를 잔존시키는 일없이, 보호 부재의 박리도 용이한 웨이퍼의 가공 방법을 제공하는 것이다.
각각 복수의 범프가 형성된 복수의 디바이스가 설치된 중앙 영역과 상기 중앙 영역을 둘러싸는 외주 잉여 영역을 표면에 갖는 웨이퍼의 가공 방법으로서, 웨이퍼의 상기 중앙 영역에 대응한 유연 부재와, 상기 유연 부재의 외주 가장자리에 설치된 접착 부재를 갖는 중간 부재를 준비하는 중간 부재 준비 단계와, 서포트 플레이트 상에 상기 중간 부재를 상기 접착 부재를 통해 점착하며, 상기 서포트 플레이트 상에 점착된 상기 중간 부재 상에, 웨이퍼의 상기 중앙 영역을 상기 유연 부재에 접촉시킨 상태로 상기 접착 부재를 통해 웨이퍼를 점착하는 점착 단계와, 상기 점착 단계를 실시한 후, 웨이퍼의 이면을 연삭하는 연삭 단계와, 상기 연삭 단계를 실시한 후, 상기 서포트 플레이트로부터 웨이퍼를 박리하는 박리 단계를 구비한 것을 특징으로 한다.To provide a wafer processing method in which the protective member is easily peeled off without any glue or adhesive remaining between the bumps when the protective member is peeled off.
A method of processing a wafer having, on its surface, a central region in which a plurality of devices each having a plurality of bumps are provided and an outer peripheral surplus region surrounding the central region, comprising: a flexible member corresponding to the central region of the wafer; and an outer periphery of the flexible member An intermediate member preparation step of preparing an intermediate member having an adhesive member installed at an edge thereof, and the intermediate member is attached to a support plate through the adhesive member, and on the intermediate member adhered to the support plate, the wafer is A sticking step of adhering the wafer through the adhesive member in a state in which the central region is in contact with the flexible member, a grinding step of grinding the back surface of the wafer after performing the sticking step, and after performing the grinding step, the support and a peeling step of peeling the wafer from the plate.

Description

웨이퍼 가공 방법 및 중간 부재{WAFER PROCESSING METHOD AND INTERMEDIATE MEMBER}Wafer processing method and intermediate member

본 발명은 각 디바이스가 복수의 범프를 갖는 웨이퍼의 가공 방법 및 상기 가공 방법에서 사용되는 중간 부재에 관한 것이다.The present invention relates to a processing method of a wafer in which each device has a plurality of bumps, and an intermediate member used in the processing method.

IC, LSI 등의 수많은 디바이스가 표면에 형성되고, 또한 개개의 디바이스가 격자형으로 형성된 복수의 분할 예정 라인(스트리트)에 의해 구획된 반도체 웨이퍼는, 연삭 장치에 의해 이면이 연삭되어 미리 정해진 두께로 가공된 후, 절삭 장치(다이싱 장치)에 의해 분할 예정 라인을 절삭하여 개개의 디바이스로 분할되고, 분할된 디바이스는 휴대 전화, 퍼스널 컴퓨터 등의 각종 전자 기기에 널리 이용되고 있다.A semiconductor wafer, in which numerous devices such as ICs and LSIs are formed on the surface, and divided by a plurality of division lines (streets) in which individual devices are formed in a lattice form, are ground on the back side by a grinding device to a predetermined thickness After being processed, a line to be divided is cut by a cutting device (dicing device) to be divided into individual devices, and the divided devices are widely used in various electronic devices such as mobile phones and personal computers.

웨이퍼의 이면을 연삭하는 연삭 장치는, 웨이퍼를 유지하는 척 테이블과, 상기 척 테이블에 유지된 웨이퍼를 연삭하는 연삭 지석을 갖는 연삭 휠이 회전 가능하게 장착된 연삭 수단을 구비하고 있어, 웨이퍼를 고정밀도로 원하는 두께로 연삭할 수 있다.A grinding apparatus for grinding the back surface of a wafer includes a chuck table for holding a wafer, and grinding means on which a grinding wheel having a grinding wheel for grinding the wafer held on the chuck table is rotatably mounted, It can be ground to the desired thickness.

웨이퍼의 이면을 연삭하기 위해서는, 다수의 디바이스가 형성된 웨이퍼의 표면측을 척 테이블로 흡인 유지하지 않으면 안 되기 때문에, 디바이스를 상처 입히지 않도록 웨이퍼의 표면에는 통상 보호 테이프가 점착된다(예컨대, 일본 특허 공개 평성5-198542호 공보 참조).In order to grind the back surface of the wafer, the surface side of the wafer on which a large number of devices are formed must be sucked and held by the chuck table, so a protective tape is usually adhered to the surface of the wafer so as not to damage the devices (for example, Japanese Patent Laid-Open) See Publication No. Hei 5-198542).

최근, 전자 기기는 소형화, 박형화의 경향에 있으며, 삽입되는 반도체 디바이스도 소형화, 박형화가 요구되고 있다. 그런데, 웨이퍼의 이면을 연삭하여 예컨대 100 ㎛ 이하, 더욱 50 ㎛ 이하로 웨이퍼를 박화하면, 강성이 현저히 저하하기 때문에 그 후의 핸들링이 매우 곤란해진다. 또한, 경우에 따라서는 웨이퍼에 휘어짐이 생겨, 휘어짐에 의해 웨이퍼 자체가 파손되어 버린다고 하는 염려도 있다.BACKGROUND ART In recent years, electronic devices tend to be miniaturized and thinned, and semiconductor devices to be inserted are also required to be miniaturized and thinned. However, when the back surface of the wafer is ground and the wafer is thinned to, for example, 100 µm or less, further 50 µm or less, the rigidity is remarkably reduced, and handling thereafter becomes very difficult. Moreover, in some cases, there is also a concern that the wafer itself may be damaged due to warpage.

이러한 문제를 해결하기 위해, 웨이퍼 서포트 시스템(WSS)이 채용되어 있다. WSS에서는, 미리 강성이 있는 보호 부재에 접착제를 이용하여 웨이퍼의 표면측을 첩부한 후, 웨이퍼의 이면을 연삭하여 미리 정해진 두께로 박화한다(예컨대, 일본 특허 공개 제2004-207606호 공보 참조).To solve this problem, a wafer support system (WSS) is employed. In the WSS, the front side of the wafer is affixed to a rigid protective member in advance using an adhesive, and then the back surface of the wafer is ground and thinned to a predetermined thickness (see, for example, Japanese Patent Laid-Open No. 2004-207606).

특허문헌 1: 일본 특허 공개 평성5-198542호 공보Patent Document 1: Japanese Patent Laid-Open No. Hei 5-198542 특허문헌 2: 일본 특허 공개 제2004-207606호 공보Patent Document 2: Japanese Patent Laid-Open No. 2004-207606

그러나, 웨이퍼를 보호 테이프나 WSS의 보호 부재로부터 파손시키는 일없이 박리하는 것은 어렵고, 특히 최근에는, 웨이퍼의 대구경화나 완성 두께가 박화의 경향에 있기 때문에, 웨이퍼를 파손시키는 일없이 보호 부재로부터 박리하는 것이 어려워져 있다. 또한, 웨이퍼를 보호 부재로부터 박리시킨 후, 디바이스의 표면에 풀이나 접착제가 잔존하여 버린다고 하는 문제도 있다.However, it is difficult to peel the wafer without breaking it from the protective tape or the WSS protective member, and especially in recent years, since the large diameter and finished thickness of the wafer tends to be thinned, peeling the wafer from the protective member without damaging the wafer things are getting harder In addition, there is also a problem that glue and adhesive remain on the surface of the device after the wafer is peeled off the protection member.

특히, 각 디바이스 상에 복수의 범프가 형성된 웨이퍼에서는, 범프의 요철에 의해 보호 부재 상에 웨이퍼를 평탄하게 점착하는 것이 어려운 데다가, 범프 사이에 풀이나 접착제가 잔존하여 버린다고 하는 문제가 있다.In particular, in a wafer in which a plurality of bumps are formed on each device, it is difficult to flatly adhere the wafer on the protection member due to the unevenness of the bumps, and there is a problem that glue or adhesive remains between the bumps.

본 발명은 이러한 점을 감안하여 이루어진 것으로, 그 목적으로 하는 바는, 보호 부재 박리 시에 범프 사이에 풀이나 접착제를 잔존시키는 일없이, 보호 부재의 박리도 용이한 웨이퍼의 가공 방법을 제공하는 것이다.The present invention has been made in view of this point, and an object thereof is to provide a wafer processing method in which the protective member is easily peeled off without leaving glue or adhesive between the bumps when the protective member is peeled off. .

청구항 1에 기재된 발명에 따르면, 각각 복수의 범프가 형성된 복수의 디바이스가 설치된 중앙 영역과 상기 중앙 영역을 둘러싸는 외주 잉여 영역을 표면에 갖는 웨이퍼의 가공 방법으로서, 웨이퍼의 상기 중앙 영역에 대응한 유연 부재와, 상기 유연 부재의 외주 가장자리에 설치된 접착 부재를 갖는 중간 부재를 준비하는 중간 부재 준비 단계와, 서포트 플레이트 상에 상기 중간 부재를 상기 접착 부재를 통해 점착하며, 상기 서포트 플레이트 상에 점착된 상기 중간 부재 상에, 웨이퍼의 상기 중앙 영역을 상기 유연 부재에 접촉시킨 상태로 상기 접착 부재를 통해 웨이퍼를 점착하는 점착 단계와, 상기 점착 단계를 실시한 후, 웨이퍼의 이면을 연삭하는 연삭 단계와, 상기 연삭 단계를 실시한 후, 상기 서포트 플레이트로부터 웨이퍼를 박리하는 박리 단계를 포함하고, 상기 유연 부재는, 상기 접착 부재의 내측에 설치되어 있는 것을 특징으로 하는 웨이퍼의 가공 방법.According to the invention described in claim 1, there is provided a wafer processing method having on the surface a central region in which a plurality of devices each having a plurality of bumps formed thereon and an outer peripheral surplus region surrounding the central region are provided, wherein the wafer is flexible corresponding to the central region. An intermediate member preparation step of preparing an intermediate member having a member and an adhesive member installed on the outer peripheral edge of the flexible member, and adhering the intermediate member on a support plate through the adhesive member, A step of adhering the wafer through the adhesive member on an intermediate member in a state in which the central region of the wafer is in contact with the flexible member, and a grinding step of grinding the back surface of the wafer after performing the sticking step; and a peeling step of peeling the wafer from the support plate after performing the grinding step, wherein the flexible member is provided inside the adhesive member.

청구항 4에 기재된 발명에 따른면, 각각 복수의 범프가 형성된 복수의 디바이스가 설치된 중앙 영역과 상기 중앙 영역을 둘러싸는 외주 잉여 영역을 표면에 갖는 웨이퍼의 가공 방법에서 이용되는 중간 부재로서, 웨이퍼의 상기 중앙 영역에 대응한 유연 부재와, 상기 유연 부재의 외주 가장자리에 설치된 웨이퍼의 상기 외주 잉여 영역에 대응한 접착 부재를 포함하고, 상기 유연 부재는, 상기 접착 부재의 내측에 설치되어 있는 것을 특징으로 하는 중간 부재.According to the aspect of the invention according to claim 4, an intermediate member used in a wafer processing method having, on the surface, a central region in which a plurality of devices each having a plurality of bumps is provided and an outer peripheral surplus region surrounding the central region, wherein the wafer is A flexible member corresponding to the central region, and an adhesive member corresponding to the outer peripheral surplus region of the wafer provided on the outer peripheral edge of the flexible member, wherein the flexible member is provided inside the adhesive member, characterized in that intermediate absence.

본 발명의 웨이퍼의 가공 방법에 따르면, 점착되는 웨이퍼의 중앙 영역에 대응한 유연 부재와, 유연 부재의 외주 가장자리에 설치된 접착 부재를 구비한 중간 부재를 통해 서포트 플레이트 상에 웨이퍼를 점착한다.According to the wafer processing method of the present invention, the wafer is adhered on the support plate through an intermediate member having a flexible member corresponding to the central region of the wafer to be adhered, and an adhesive member provided on the outer peripheral edge of the flexible member.

따라서, 웨이퍼의 중앙 영역에는 풀이나 접착제를 개재시키는 일없이 중간 부재를 통해 웨이퍼를 서포트 플레이트 상에 점착하기 때문에, 웨이퍼를 서포트 플레이트로부터 박리하였을 때에 범프 사이에 풀이나 접착제를 잔존시키는 일이 없다.Therefore, in the central region of the wafer, the wafer is adhered to the support plate via the intermediate member without intervening glue or adhesive, so that no glue or adhesive remains between the bumps when the wafer is peeled off the support plate.

유연 부재의 외주 가장자리에 설치된 접착 부재로 웨이퍼는 서포트 플레이트 상에 접착되어 있기 때문에, 웨이퍼의 서포트 플레이트로부터의 박리도 용이하다. 또한, 웨이퍼의 중앙 영역에는 유연 부재가 접촉한 상태로 웨이퍼가 서포트 플레이트에 점착되기 때문에, 범프의 요철이 유연 부재로 흡수되어 웨이퍼의 이면이 평탄화된 상태로 서포트 플레이트에 점착된다.Since the wafer is adhered to the support plate with an adhesive member provided on the outer peripheral edge of the flexible member, the wafer is easily peeled off the support plate. In addition, since the wafer is adhered to the support plate in a state in which the flexible member is in contact with the central region of the wafer, the unevenness of the bump is absorbed by the flexible member, and the back surface of the wafer is adhered to the support plate in a flattened state.

도 1은 본 발명의 가공 방법을 실시하는 데 알맞은 웨이퍼의 사시도이다.
도 2는 점착 단계에서 점착되는 웨이퍼, 중간 부재 및 서포트 플레이트의 단면도이다.
도 3의 (A)는 유연 부재의 전체 둘레에 접착 부재가 설치된 중간 부재의 평면도이고, 도 3의 (B)는 유연 부재의 외주의 복수 부분에 접착 부재가 설치된 중간 부재의 평면도이다.
도 4는 점착 단계 실시 후의 웨이퍼, 중간 부재 및 서포트 플레이트의 단면도이다.
도 5의 (A)는 서포트 플레이트에 보호 테이프를 점착한 상태의 단면도이고, 도 5의 (B)는 바이트 절삭 장치로 보호 테이프를 절삭하여 평탄화하는 모습을 나타내는 일부 단면 측면도이다.
도 6은 연삭 단계를 나타내는 사시도이다.
도 7은 전사 단계를 나타내는 단면도이다.
도 8은 박리 단계의 제1 실시형태를 나타내는 단면도이다.
도 9는 박리 단계의 제2 실시형태를 나타내는 단면도이다.1 is a perspective view of a wafer suitable for practicing the processing method of the present invention;
2 is a cross-sectional view of a wafer, an intermediate member, and a support plate to be adhered in an adhesion step.
Fig. 3 (A) is a plan view of an intermediate member provided with an adhesive member on the entire periphery of the flexible member, and Fig. 3 (B) is a plan view of an intermediate member provided with an adhesive member on a plurality of portions of the outer periphery of the flexible member.
4 is a cross-sectional view of the wafer, the intermediate member and the support plate after performing the adhesion step.
Fig. 5 (A) is a cross-sectional view of a state in which a protective tape is adhered to a support plate, and Fig. 5 (B) is a partial cross-sectional side view showing a state in which the protective tape is cut and flattened by a bite cutting device.
6 is a perspective view showing a grinding step;
7 is a cross-sectional view showing a transfer step.
8 is a cross-sectional view showing a first embodiment of a peeling step.
9 is a cross-sectional view showing a second embodiment of the peeling step.

이하, 본 발명의 실시형태를 도면을 참조하여 상세하게 설명한다. 도 1을 참조하면, 본 발명의 가공 방법에 따라 가공하는 데 알맞은 반도체 웨이퍼(이하, 단순히 웨이퍼라고 약칭하는 경우가 있음)(11)의 사시도가 나타나 있다.EMBODIMENT OF THE INVENTION Hereinafter, embodiment of this invention is described in detail with reference to drawings. 1, a perspective view of a semiconductor wafer (hereinafter, simply referred to as a wafer) 11 suitable for processing according to the processing method of the present invention is shown.

반도체 웨이퍼(11)는 표면(11a) 및 이면(11b)을 가지고 있고, 표면(11a)에는 복수의 스트리트(분할 예정 라인)(13)가 직교하여 형성되어 있으며, 스트리트(13)에 의해 구획된 각 영역에 각각 디바이스(15)가 형성되어 있다. 반도체 웨이퍼(11)는, 예컨대 두께 700 ㎛의 실리콘 웨이퍼로 구성된다.The semiconductor wafer 11 has a front surface 11a and a back surface 11b, and a plurality of streets (scheduled division lines) 13 are formed on the surface 11a to be orthogonal to each other, and are partitioned by the streets 13 . A device 15 is formed in each region, respectively. The semiconductor wafer 11 is constituted of, for example, a silicon wafer having a thickness of 700 µm.

도 1의 확대도에 나타내는 바와 같이, 각 디바이스(15)의 사방에는 복수의 돌기형의 범프(17)가 형성되어 있다. 각 디바이스(15)의 사방에 범프(17)가 형성되어 있기 때문에, 반도체 웨이퍼(11)는 범프(17)가 형성되어 있는 중앙 영역(범프 형성 영역)(19)과, 중앙 영역(19)을 둘러싸는 외주 잉여 영역(외주 범프 미형성 영역)(21)을 가지고 있다.As shown in the enlarged view of FIG. 1 , a plurality of protruding bumps 17 are formed on all sides of each device 15 . Since bumps 17 are formed on all sides of each device 15 , the semiconductor wafer 11 has a central region (bump formation region) 19 in which bumps 17 are formed and a central region 19 . It has a surrounding periphery surplus region (outer periphery bump non-formation region) 21 .

도 2를 참조하면, 웨이퍼(11) 및 웨이퍼(11)의 표면(11a)에 점착되는 서포트 플레이트(12) 및 중간 부재(14)의 단면도가 나타나 있다. 서포트 플레이트(12)는, 예컨대 실리콘 웨이퍼 또는 유리 웨이퍼로 구성된다.Referring to FIG. 2 , cross-sectional views of the wafer 11 and the support plate 12 and the intermediate member 14 adhered to the surface 11a of the wafer 11 are shown. The support plate 12 is made of, for example, a silicon wafer or a glass wafer.

또한, 웨이퍼(11)의 외주부에는 표면으로부터 이면에 이르는 원호형의 모따기부(11e)가 형성되어 있고, 이후에 설명하는 연삭 단계에서 웨이퍼(11)의 이면(11b)을 연삭하여 웨이퍼(11)를 미리 정해진 두께로 형성하면, 모따기부(11e)의 일부에 의해 웨이퍼(11)의 외주부에 샤프 엣지가 형성되게 된다. 그 대책으로서, 적어도 연삭 단계를 실시할 때까지 웨이퍼(11)의 모따기부(11e)의 일부를 절삭 블레이드로 원형으로 제거하는 엣지 트리밍을 실시해 두는 것이 바람직하다.Further, an arc-shaped chamfer 11e extending from the front surface to the back surface is formed on the outer periphery of the wafer 11, and the back surface 11b of the wafer 11 is ground by grinding the wafer 11 in the grinding step to be described later. is formed to a predetermined thickness, a sharp edge is formed on the outer periphery of the wafer 11 by a part of the chamfer 11e. As a countermeasure, it is preferable to perform edge trimming in which a part of the chamfer 11e of the wafer 11 is circularly removed with a cutting blade at least until the grinding step is performed.

중간 부재(14)는, 고무 또는 스펀지 고무 등으로 형성된 유연 부재(16)와, 유연 부재(16)의 외주에 설치된 접착 부재(18)로 구성된다. 접착 부재(18)의 두께(t1)는 1 ㎜∼5 ㎜, 보다 바람직하게는 2 ㎜∼3 ㎜ 정도이다. 접착 부재(18)는 예컨대 접착제로 형성되고, 이후에 설명하는 점착 단계 실시 후, 웨이퍼(11)에 열 처리를 행하는 경우에는, 접착 부재(18)로서 내열성을 갖는 것을 선택한다.The intermediate member 14 is composed of a flexible member 16 made of rubber, sponge rubber, or the like, and an adhesive member 18 provided on the outer periphery of the flexible member 16 . The thickness t1 of the adhesive member 18 is about 1 mm to 5 mm, more preferably about 2 mm to 3 mm. The adhesive member 18 is formed of, for example, an adhesive, and when heat treatment is performed on the wafer 11 after the sticking step to be described later, one having heat resistance is selected as the adhesive member 18 .

도 3의 (A)에 나타내는 바와 같이, 중간 부재(14)는, 원형의 유연 부재(16)와, 유연 부재(16)의 전체 외주에 걸쳐 연속적으로 설치된 접착 부재(18)로 구성된다. 혹은, 도 3의 (B)에 나타내는 바와 같이, 중간 부재(14A)는, 원형의 유연 부재(16)와, 유연 부재(16)의 외주의 복수 부분에 설치된 접착 부재(18)로 구성된다.As shown in FIG. 3A , the intermediate member 14 is composed of a circular flexible member 16 and an adhesive member 18 continuously provided over the entire outer periphery of the flexible member 16 . Alternatively, as shown in FIG. 3B , the intermediate member 14A is composed of a circular flexible member 16 and an adhesive member 18 provided in a plurality of portions of the outer periphery of the flexible member 16 .

본 발명의 웨이퍼의 가공 방법에서는, 중간 부재(14)를 준비한 후, 도 4에 나타내는 바와 같이, 서포트 플레이트(12) 상에 중간 부재(14)를 접착 부재(18)를 통해 점착하며, 서포트 플레이트(12) 상에 점착된 중간 부재(14) 상에 웨이퍼(11)의 중앙 영역(범프 형성 영역)(19)을 유연 부재(16)에 접촉시킨 상태로, 접착 부재(18)를 통해 웨이퍼(11)를 중간 부재(14)에 점착하는 점착 단계를 실시한다. 이 점착 단계를 실시함으로써, 웨이퍼(11)는 중간 부재(14)의 외주에 설치된 접착 부재(18)를 통해서만 서포트 플레이트(12)에 점착되어 있게 된다.In the wafer processing method of the present invention, after preparing the intermediate member 14 , as shown in FIG. 4 , the intermediate member 14 is adhered on the support plate 12 through the adhesive member 18 , and the support plate On the intermediate member 14 adhered thereon (12), with the central region (bump formation region) 19 of the wafer 11 in contact with the flexible member 16, the wafer ( 11) to the intermediate member 14 is subjected to an adhesion step. By carrying out this sticking step, the wafer 11 is adhered to the support plate 12 only through the adhesive member 18 provided on the outer periphery of the intermediate member 14 .

웨이퍼(11)의 이면(11b)을 연삭하는 연삭 단계를 실시하기 전에, 웨이퍼(11)의 이면(11b)의 정밀도를 내기 위해, 도 5의 (A)에 나타내는 바와 같이, 서포트 플레이트(12)에 기재와 풀층으로 이루어지는 테이프(20)를 점착하는 것이 바람직하다.Before carrying out the grinding step of grinding the back surface 11b of the wafer 11, in order to obtain the precision of the back surface 11b of the wafer 11, as shown in FIG. 5A, the support plate 12 It is preferable to adhere the tape 20 which consists of a base material and a glue layer to this.

테이프 점착 후, 도 5의 (B)에 나타내는 바와 같이, 바이트 절삭 장치로 테이프(20)를 절삭하여 평탄화한다. 도 5의 (B)에 있어서, 도면 부호 22는 바이트 절삭 장치의 바이트 절삭 유닛이며, 회전 구동되는 스핀들(24)과, 스핀들(24)의 선단에 고정된 마운트(26)와, 마운트(26)에 착탈 가능하게 장착된 바이트 휠(28)을 포함하고 있다. 바이트 휠(28)에는, 선단에 다이아몬드로 이루어지는 절단날을 갖는 바이트 공구(30)가 착탈 가능하게 부착되어 있다.After the tape adhesion, as shown in Fig. 5B, the tape 20 is cut with a bite cutting device to flatten it. In FIG. 5B , reference numeral 22 denotes a bite cutting unit of the bite cutting device, and a spindle 24 that is rotationally driven, a mount 26 fixed to the tip of the spindle 24 , and a mount 26 . Includes a bite wheel (28) detachably mounted to the. To the bite wheel 28, a bite tool 30 having a cutting edge made of diamond at its tip is detachably attached.

테이프(20)의 평탄화 단계에서는, 바이트 절삭 장치의 척 테이블(32)로 웨이퍼(11)를 흡인 유지하여 테이프(20)를 노출시킨다. 그리고, 바이트 공구(30)를 테이프(20)에 미리 정해진 깊이 절입하는 높이 위치에 위치잡은 후, 바이트 휠(28)을 예컨대 약 2000 rpm으로 회전시키면서, 척 테이블(32)을 화살표(A) 방향으로 미리 정해진 이송 속도로 이동시키면서, 바이트 공구(30)로 테이프(20)를 선회 절삭한다.In the step of flattening the tape 20 , the tape 20 is exposed by sucking and holding the wafer 11 with the chuck table 32 of the bite cutting device. Then, after positioning the bite tool 30 at the height of cutting into the tape 20 to a predetermined depth, while rotating the bite wheel 28 at, for example, about 2000 rpm, the chuck table 32 is rotated by the arrow (A) While moving at a predetermined feed rate in the direction, the tape 20 is swiveled with the bite tool 30 .

이 선회 절삭 시에는, 척 테이블(32)은 회전시키지 않고 화살표(A) 방향으로 가공 이송한다. 테이프(20)의 평탄화 단계를 실시하면, 웨이퍼(11)의 이면(11b)과 테이프(20)의 표면 사이의 충분한 평행도가 얻어지게 된다.At the time of this turning cutting, the chuck table 32 is not rotated, but a machining feed is carried out in the direction of the arrow (A). When the step of planarizing the tape 20 is carried out, sufficient parallelism between the back surface 11b of the wafer 11 and the surface of the tape 20 is obtained.

그러나, 서포트 플레이트(12) 상에 중간 부재(14)를 통해 웨이퍼(11)를 점착하였을 때, 서포트 플레이트(12)의 지지면(하면)과 웨이퍼(11)의 이면(11b)의 평행도가 충분히 확보되어 있는 경우에는, 서포트 플레이트(12)에 테이프(20)를 반드시 점착할 필요는 없다.However, when the wafer 11 is adhered on the support plate 12 through the intermediate member 14 , the parallelism between the support surface (lower surface) of the support plate 12 and the rear surface 11b of the wafer 11 is sufficient. When secured, the tape 20 is not necessarily adhered to the support plate 12 .

도 4에 나타내는 점착 단계 실시 후, 혹은 도 5의 (B)에 나타내는 테이프 평탄화 단계 실시 후, 웨이퍼(11)의 이면(11b)을 연삭하는 연삭 단계를 실시한다. 연삭 단계에서는, 도 6에 나타내는 바와 같이, 연삭 장치의 척 테이블(48)로 서포트 플레이트(12)를 흡인 유지하여, 웨이퍼(11)의 이면(11b)을 노출시킨다.After the adhesion step shown in FIG. 4 or after the tape planarization step shown in FIG. 5B is performed, a grinding step of grinding the back surface 11b of the wafer 11 is performed. In the grinding step, as shown in FIG. 6 , the support plate 12 is sucked and held by the chuck table 48 of the grinding apparatus to expose the back surface 11b of the wafer 11 .

도 6에 있어서, 연삭 유닛(36)은, 회전 구동되는 스핀들(38)과, 스핀들(38)의 선단에 고정된 휠 마운트(40)와, 휠 마운트(40)에 복수의 나사(41)에 의해 착탈 가능하게 장착된 연삭 휠(42)을 포함하고 있다. 연삭 휠(42)은, 환형의 휠 베이스(44)와, 휠 베이스(44)의 하단 외주부에 환형으로 고착된 복수의 연삭 지석(46)으로 구성된다.In FIG. 6 , the grinding unit 36 includes a spindle 38 driven for rotation, a wheel mount 40 fixed to the tip of the spindle 38 , and a plurality of screws 41 to the wheel mount 40 . and a grinding wheel 42 detachably mounted by the The grinding wheel 42 is composed of an annular wheel base 44 and a plurality of abrasive stones 46 annularly fixed to the outer periphery of the lower end of the wheel base 44 .

연삭 단계에서는, 척 테이블(48)을 화살표(a)로 나타내는 방향으로 예컨대 300 rpm으로 회전시키면서, 연삭 휠(42)을 화살표(b)로 나타내는 방향으로 예컨대 6000 rpm으로 회전시키며, 도시하지 않는 연삭 유닛 이송 기구를 구동시켜 연삭 휠(42)의 연삭 지석(46)을 웨이퍼(11)의 이면(11b)에 접촉시킨다.In the grinding step, the grinding wheel 42 is rotated, for example, at 6000 rpm in the direction indicated by the arrow b, while the chuck table 48 is rotated at 300 rpm in the direction indicated by the arrow a, for grinding, not shown. The unit transfer mechanism is driven to bring the grinding wheel 46 of the grinding wheel 42 into contact with the back surface 11b of the wafer 11 .

그리고, 연삭 휠(42)을 미리 정해진 연삭 이송 속도로 하방으로 미리 정해진 양 연삭 이송한다. 접촉식 또는 비접촉식의 두께 측정 게이지로 웨이퍼(11)의 두께를 측정하면서, 웨이퍼(11)를 미리 정해진 두께(예컨대 100 ㎛)로 연삭한다.Then, the grinding wheel 42 is fed by a predetermined amount of grinding downward at a predetermined grinding feed rate. While measuring the thickness of the wafer 11 with a contact or non-contact thickness measuring gauge, the wafer 11 is ground to a predetermined thickness (eg, 100 m).

또한, 이 연삭 단계는 도 6에 나타낸 실시형태에 한정되는 것이 아니며, 웨이퍼(11)의 대략 반경 정도의 연삭 휠을 사용하여, 웨이퍼(11)의 중앙 영역(19)에 대응하는 이면(11b)을 연삭하여 원형 오목부를 형성하고, 외주 잉여 영역(21)에 대응하는 이면은 잔존시켜 원형 오목부를 둘러싸는 환형의 볼록부를 형성하도록 하여도 좋다.Incidentally, this grinding step is not limited to the embodiment shown in FIG. 6 , and using a grinding wheel approximately radial of the wafer 11 , the back surface 11b corresponding to the central region 19 of the wafer 11 . may be ground to form a circular concave portion, and the back surface corresponding to the outer peripheral surplus region 21 may be left to form an annular convex portion surrounding the circular concave portion.

연삭 단계 실시 후, 그 후의 핸들링성을 확보하기 위해, 도 7에 나타내는 바와 같이, 웨이퍼(11)의 이면(11b)을 외주부가 환형 프레임(F)에 점착된 다이싱 테이프(T)에 점착하는 전사 단계를 실시하는 것이 바람직하다.After the grinding step is performed, in order to ensure handling properties thereafter, as shown in FIG. 7 , the back surface 11b of the wafer 11 is adhered to the dicing tape T whose outer periphery is adhered to the annular frame F. It is preferable to carry out a transfer step.

전사 단계 실시 후, 서포트 플레이트(12)로부터 웨이퍼(11)를 박리하는 박리 단계를 실시한다. 이 박리 단계의 제1 실시형태에서는, 도 8의 (A)에 나타내는 바와 같이, 웨이퍼(11)를 다이싱 테이프(T)를 통해 도시하지 않는 척 테이블로 흡인 유지하면서, 절삭 유닛(50)으로 중간 부재(14)의 접착 부재(18)를 절삭하여 제거한다. 절삭 유닛(50)은, 연직 방향으로 설치된 스핀들(52)과, 스핀들(52)의 선단부에 장착된 절삭 블레이드(54)를 포함하고 있다.After performing the transfer step, a peeling step of peeling the wafer 11 from the support plate 12 is performed. In the first embodiment of this peeling step, as shown in FIG. 8A , the wafer 11 is sucked and held by a chuck table (not shown) through the dicing tape T by the cutting unit 50 . The adhesive member 18 of the intermediate member 14 is cut and removed. The cutting unit 50 includes a spindle 52 installed in the vertical direction, and a cutting blade 54 attached to the tip of the spindle 52 .

박리 단계의 제1 실시형태에서는, 화살표(A) 방향으로 고속 회전하는 절삭 블레이드(54)를 측방으로부터 중간 부재(14)의 접착 부재(18)에 절입시켜, 도시하지 않는 척 테이블을 화살표(R1) 방향으로 저속으로 회전시킴으로써 접착 부재(18)를 절삭하여 제거한다. 절삭 부재(18) 제거 후, 도 8의 (B)에 나타내는 바와 같이, 다이싱 테이프(T)에 점착된 웨이퍼(11)로부터 서포트 플레이트(12)를 유연 부재(16)와 함께 박리한다.In the first embodiment of the peeling step, a cutting blade 54 rotating at a high speed in the direction of the arrow A is cut into the adhesive member 18 of the intermediate member 14 from the side, and a chuck table (not shown) is attached to the arrow R1. ) direction to cut and remove the adhesive member 18 by rotating it at a low speed. After the removal of the cutting member 18, the support plate 12 is peeled together with the flexible member 16 from the wafer 11 adhered to the dicing tape T, as shown in FIG.8(B).

다음에, 도 9를 참조하여, 박리 단계의 제2 실시형태에 대해서 설명한다. 본 실시형태의 박리 단계에서는, 수평 방향으로 신장하는 스핀들(52)을 갖는 통상의 절삭 유닛(50A)을 사용한다.Next, with reference to FIG. 9, 2nd Embodiment of a peeling step is demonstrated. In the peeling step of this embodiment, an ordinary cutting unit 50A having a spindle 52 extending in the horizontal direction is used.

화살표(A) 방향으로 고속 회전하는 절삭 블레이드(54)를 서포트 플레이트(12)의 외주부에 접착 부재(18)의 하단부 근방까지 절입시켜, 도시하지 않은 척 테이블을 화살표(R1) 방향으로 저속으로 회전시킴으로써, 서포트 플레이트(12)의 외주부와 함께 접착 부재(18)를 절삭하여 제거한다.A cutting blade 54 rotating at high speed in the direction of the arrow (A) is cut into the outer peripheral portion of the support plate 12 to the vicinity of the lower end of the adhesive member 18, and the chuck table (not shown) is rotated at low speed in the direction of the arrow (R1) By doing so, the adhesive member 18 is cut and removed together with the outer periphery of the support plate 12 .

이에 의해, 도 8의 (B)에 나타내는 것과 같이, 다이싱 테이프(T)에 점착된 웨이퍼(11)로부터 서포트 플레이트(12)를 유연 부재(16)와 함께 제거할 수 있다.Thereby, as shown in FIG.8(B), the support plate 12 can be removed together with the flexible member 16 from the wafer 11 adhered to the dicing tape T.

11 반도체 웨이퍼
12 서포트 플레이트
14 중간 부재
15 디바이스
16 유연 부재
17 범프
18 접착 부재
19 중앙 영역(범프 형성 영역)
20 테이프
21 외주 잉여 영역(범프 미형성 영역)
22 절삭 유닛
30 바이트 공구
36 연삭 유닛
42 연삭 휠
46 연삭 지석
50, 50A 절삭 유닛
54 절삭 블레이드11 semiconductor wafer
12 support plate
14 Intermediate member
15 devices
16 Flexible member
17 bump
18 Adhesive member
19 Central area (bump forming area)
20 tape
21 Outer surplus area (bump-free area)
22 cutting unit
30 Byte Tool
36 grinding units
42 grinding wheel
46 grinding wheel
50, 50A cutting unit
54 cutting blades

Claims (4)

각각 복수의 범프가 형성된 복수의 디바이스가 설치된 중앙 영역과 상기 중앙 영역을 둘러싸는 외주 잉여 영역을 표면에 갖는 웨이퍼의 가공 방법으로서,
웨이퍼의 상기 중앙 영역에 대응한 비점착성의 유연 부재와, 상기 유연 부재의 외주 가장자리에 설치된 접착 부재를 갖는 중간 부재를 준비하는 중간 부재 준비 단계와,
서포트 플레이트 상에 상기 중간 부재를 상기 접착 부재를 통해 점착하며, 상기 서포트 플레이트 상에 점착된 상기 중간 부재 상에, 웨이퍼의 상기 중앙 영역을 상기 유연 부재에 접촉시킨 상태로 상기 접착 부재를 통해 웨이퍼를 점착하는 점착 단계와,
상기 점착 단계를 실시한 후, 웨이퍼의 이면을 연삭하는 연삭 단계와,
상기 연삭 단계를 실시한 후, 상기 서포트 플레이트로부터 웨이퍼를 박리하는 박리 단계
를 포함하고,
상기 유연 부재는, 상기 접착 부재의 내측에 설치되어 있고, 상기 복수의 범프가 상기 유연 부재 내로 흡수되는 것을 특징으로 하는 웨이퍼의 가공 방법.A method of processing a wafer having, on the surface, a central region in which a plurality of devices each having a plurality of bumps are installed, and an outer peripheral surplus region surrounding the central region, the wafer processing method comprising:
An intermediate member preparation step of preparing an intermediate member having a non-adhesive flexible member corresponding to the central region of the wafer and an adhesive member provided on an outer peripheral edge of the flexible member;
The intermediate member is adhered to the support plate through the adhesive member, and on the intermediate member adhered to the support plate, the wafer is pressed through the adhesive member in a state in which the central region of the wafer is in contact with the flexible member. Adhesive step of sticking, and
After performing the adhesion step, a grinding step of grinding the back surface of the wafer;
After performing the grinding step, a peeling step of peeling the wafer from the support plate
including,
The flexible member is provided inside the adhesive member, and the plurality of bumps are absorbed into the flexible member. 제1항에 있어서,
상기 연삭 단계를 실시한 후 상기 박리 단계를 실시하기 전에, 웨이퍼를 외주부가 환형 프레임에 점착된 다이싱 테이프에 점착하는 전사 단계를 더 포함하는 웨이퍼의 가공 방법.According to claim 1,
and a transfer step of adhering the wafer to a dicing tape having an outer periphery attached to an annular frame after performing the grinding step and before performing the peeling step. 제1항 또는 제2항에 있어서,
상기 박리 단계에서는, 상기 접착 부재의 측방으로부터 절삭 블레이드를 절입시켜 상기 접착 부재를 절삭하는 웨이퍼의 가공 방법.3. The method of claim 1 or 2,
In the peeling step, a wafer processing method for cutting the adhesive member by cutting the cutting blade from the side of the adhesive member. 제1항에 있어서, 상기 연삭 단계를 실시하기 전에,
상기 서포트 플레이트의 상기 중간 부재가 점착된 면의 이면 상에 테이프를 점착하는 단계; 및
상기 테이프를 평탄화하는 단계
를 더 포함하는 웨이퍼의 가공 방법.The method of claim 1, wherein before performing the grinding step,
adhering the tape on the back surface of the side to which the intermediate member of the support plate is adhered; and
flattening the tape
A method of processing a wafer further comprising a.
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