CN105097631B - Wafer processing method and intermediate member - Google Patents

Wafer processing method and intermediate member Download PDF

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Publication number
CN105097631B
CN105097631B CN201510249266.4A CN201510249266A CN105097631B CN 105097631 B CN105097631 B CN 105097631B CN 201510249266 A CN201510249266 A CN 201510249266A CN 105097631 B CN105097631 B CN 105097631B
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wafer
bonding
central region
intermediate member
carrier plate
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CN105097631A (en
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卡尔·普利瓦西尔
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Disco Corp
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Disco Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02024—Mirror polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
    • H01L2221/68386—Separation by peeling
    • H01L2221/6839—Separation by peeling using peeling wedge or knife or bar

Abstract

A wafer processing method and an intermediate member, which can prevent paste or adhesive from remaining between bumps when a protective member is peeled off, and which can easily peel off the protective member. The wafer has on the surface: a central region in which a plurality of devices are arranged, the plurality of devices having a plurality of bumps formed thereon, respectively; and a peripheral residual region surrounding the central region, the processing method having: an intermediate member preparation step of preparing an intermediate member having a flexible member corresponding to the central region of the wafer and a bonding member disposed on an outer peripheral edge of the flexible member; a bonding step of bonding the intermediate member to the carrier plate via the bonding member and bonding the wafer to the intermediate member bonded to the carrier plate via the bonding member in a state where the central region of the wafer is in contact with the flexible member; a grinding step of grinding the back surface of the wafer after the bonding step is performed; and a peeling step of peeling the wafer from the carrier plate after the grinding step is performed.

Description

Wafer processing method and intermediate member
Technical Field
The present invention relates to a method of processing a wafer having a plurality of bumps for each device, and an intermediate member used in the method.
Background
A large number of devices such as ICs (Integrated circuits) and LSIs (large scale Integrated circuits) are formed on a surface of a semiconductor wafer, and each device is divided into a plurality of lines to be divided (streets) formed in a lattice shape, and a rear surface of the semiconductor wafer is ground by a grinding apparatus to a predetermined thickness and then cut along the lines to be divided by a cutting apparatus (scribing apparatus) to be divided into individual devices.
A grinding device for grinding the back surface of a wafer comprises: a chuck table holding a wafer; and a grinding unit on which a grinding wheel is rotatably mounted, the grinding wheel having a grindstone for grinding the wafer held on the chuck table, and the grinding device being capable of grinding the wafer to a desired thickness with high accuracy.
In order to grind the back surface of a wafer, it is necessary to suck and hold the front surface side of the wafer on which a plurality of devices are formed with a chuck table, and therefore a protective tape is generally stuck to the front surface of the wafer so as not to damage the devices (see, for example, japanese patent application laid-open No. 5-198542).
In recent years, electronic devices tend to be miniaturized and thinned, and semiconductor devices incorporated in electronic devices are also required to be miniaturized and thinned. However, if the back surface of the wafer is ground to be thinned to, for example, 100 μm or less or even 50 μm or less, the rigidity is significantly lowered, and it is very difficult to perform the subsequent operation. In addition, the wafer may be warped, and the wafer itself may be damaged due to the warping.
In order to solve such a problem, a wafer carrier system (WSS) is employed. In the WSS, the front surface side of a wafer is bonded to a rigid protective member with an adhesive in advance, and then the back surface of the wafer is ground to be thin to a predetermined thickness (see, for example, japanese patent application laid-open No. 2004-207606).
Patent document 1: japanese laid-open patent publication No. 5-198542
Patent document 2: japanese patent laid-open publication No. 2004-207606
However, it is difficult to peel the wafer from the protective tape or the WSS protective member without breaking it, and in recent years, it is more difficult to peel the wafer from the protective member without breaking it because the diameter of the wafer tends to be larger and the final thickness tends to be thinner. Further, there is a problem that paste or adhesive remains on the surface of the device after the wafer is peeled from the protective member.
In particular, in a wafer having a plurality of bumps formed on each device, it is difficult to attach the wafer to a protective member flatly due to the bumps and the unevenness, and there is a problem that paste or adhesive remains between the bumps.
Disclosure of Invention
The present invention has been made in view of the above problems, and an object thereof is to provide a wafer processing method in which a protective member is peeled off without leaving paste or adhesive between bumps and the protective member is easily peeled off.
According to the invention described in claim 1, there is provided a method of processing a wafer having on a surface thereof: a central region in which a plurality of devices are arranged, the plurality of devices each having a plurality of bumps formed thereon; and a peripheral residual region surrounding the central region, wherein the wafer processing method comprises: an intermediate member preparation step of preparing an intermediate member having a flexible member corresponding to the central region of the wafer and a bonding member disposed on an outer peripheral edge of the flexible member; a bonding step of bonding the intermediate member to the carrier plate via the bonding member and bonding the wafer to the intermediate member bonded to the carrier plate via the bonding member in a state where the central region of the wafer is in contact with the flexible member; a grinding step of grinding the back surface of the wafer after the bonding step is performed; and a peeling step of peeling the wafer from the carrier plate after the grinding step is performed.
According to the invention described in claim 3, there is provided an intermediate member used in a method of processing a wafer, the intermediate member having: a central region in which a plurality of devices are arranged, the plurality of devices each having a plurality of bumps formed thereon; and a peripheral residual region surrounding the central region, characterized in that the intermediate member has: a flexible member corresponding to the central region of the wafer; and an adhesive member corresponding to the peripheral surplus region of the wafer disposed on the peripheral edge of the flexible member.
According to the wafer processing method of the present invention, a wafer is attached to a carrier plate via an intermediate member, wherein the intermediate member has: a flexible member corresponding to a central region of the bonded wafer; and an adhesive member disposed on the peripheral edge of the flexible member.
Therefore, since the wafer is attached to the carrier plate via the intermediate member and no paste or adhesive exists between the central region of the wafer and the intermediate member, no paste or adhesive remains between the bumps when the wafer is peeled off from the carrier plate.
Since the wafer is bonded to the carrier plate by the bonding member provided at the outer peripheral edge of the soft member, the wafer is also easily peeled from the carrier plate. Further, since the wafer is attached to the carrier plate in a state where the flexible member is in contact with the central region of the wafer, the irregularities of the bumps are absorbed by the flexible member, and the wafer is attached to the carrier plate in a state where the back surface of the wafer is planarized.
Drawings
Fig. 1 is a perspective view of a wafer suitable for carrying out the processing method of the present invention.
Fig. 2 is a cross-sectional view of the wafer, the intermediate member, and the carrier plate bonded in the bonding step.
Fig. 3(a) is a plan view of an intermediate member in which adhesive members are arranged over the entire peripheral surface of a flexible member, and fig. 3(B) is a plan view of an intermediate member in which adhesive members are arranged at a plurality of positions on the outer periphery of a flexible member.
Figure 4 is a cross-sectional view of the wafer, intermediate member and carrier plate after the attachment step has been performed.
Fig. 5(a) is a sectional view in a state where a protective tape is pasted on the carrier plate, and fig. 5(B) is a partial sectional side view showing a case where the protective tape is cut and flattened using the bit cutting device.
Fig. 6 is a perspective view showing a grinding step.
Fig. 7 is a sectional view showing a transfer step.
Fig. 8 is a sectional view of embodiment 1 showing a peeling step.
Fig. 9 is a sectional view of embodiment 2 showing a peeling step.
Description of the reference symbols
11: a semiconductor wafer; 12: a carrier plate; 14: an intermediate member; 15: a device; 16: a soft member; 17: salient points; 18: an adhesive member; 19: a central region (bump forming region); 20: a belt; 21: a peripheral surplus region (bump unformed region); 22: a cutting unit; 30: a bit tool; 36: a cutting unit; 42: a grinding wheel; 46: an abrasive article; 50. 50A: a cutting unit; 54: a cutting tool.
Detailed Description
Embodiments of the present invention will be described in detail below with reference to the accompanying drawings. Referring to fig. 1, there is shown a perspective view of a semiconductor wafer (hereinafter sometimes simply referred to as "wafer") 11 suitable for processing by the processing method of the present invention.
The semiconductor wafer 11 has a front surface 11a and a back surface 11b, a plurality of streets (planned dividing lines) 13 are formed orthogonally on the front surface 11a, and devices 15 are formed in respective regions partitioned by the streets 13. The semiconductor wafer 11 is, for example, a silicon wafer having a thickness of 700 μm.
As shown in the enlarged view of fig. 1, a plurality of protruding bumps 17 are formed on the four sides of each device 15. Since the bumps 17 are formed on the four sides of each device 15, the semiconductor wafer 11 has: a central region (bump forming region) 19 where the bumps 17 are formed; and a peripheral residual region (peripheral bump unformed region) 21 surrounding the central region 19.
Referring to fig. 2, there is shown a cross-sectional view of the wafer 11, carrier plate 12 affixed to the surface 11a of the wafer 11, and intermediate member 14. The carrier plate 12 is formed, for example, from a silicon wafer or a glass wafer.
Further, an arc-shaped chamfered portion 11e is formed from the front surface to the back surface of the wafer 11 on the outer peripheral portion, and if the back surface 11b of the wafer 11 is ground in a grinding step described later to form the wafer 11 with a predetermined thickness, a sharp edge is formed on the outer peripheral portion of the wafer 11 by a part of the chamfered portion 11 e. As a countermeasure against this, it is preferable to perform edge trimming, that is, to remove a part of the chamfered portion 11e of the wafer 11 into a circular shape by means of a cutting tool, at least before performing the grinding step.
The intermediate member 14 is composed of a soft member 16 and an adhesive member 18, wherein the soft member 16 is made of rubber, sponge rubber or the like, and the adhesive member 18 is disposed on the outer periphery of the soft member 16. The thickness t1 of the adhesive member 18 is 1 to 5mm, preferably about 2 to 3 mm. The adhesive member 18 is formed of, for example, an adhesive, and in the case where the wafer 11 is to be subjected to a heat treatment after the application step described below is performed, a substance having heat resistance is selected as the adhesive member 18.
As shown in fig. 3(a), the intermediate member 14 is composed of a circular flexible member 16 and a bonding member 18 continuously disposed over the entire outer periphery of the flexible member 16. Alternatively, as shown in fig. 3(B), the intermediate member 14A is composed of a circular flexible member 16 and adhesive members 18 disposed at a plurality of positions on the outer periphery of the flexible member 16.
In the wafer processing method of the present invention, after the intermediate member 14 is prepared, the attaching step is performed as follows: as shown in fig. 4, the intermediate member 14 is attached to the carrier plate 12 via the adhesive member 18, and the wafer 11 is attached to the intermediate member 14 via the adhesive member 18 in a state where the central region (bump forming region) 19 of the wafer 11 is in contact with the flexible member 16 on the intermediate member 14 attached to the carrier plate 12. By performing this attaching step, the wafer 11 is attached to the carrier plate 12 only via the adhesive member 18 provided on the outer periphery of the intermediate member 14.
Before the grinding step of grinding the back surface 11b of the wafer 11 is performed, in order to improve the accuracy of the back surface 11b of the wafer 11, it is preferable to attach a tape 20 composed of a base material and a paste layer to the carrier plate 12 as shown in fig. 5 (a).
After the tape is pasted, the tape 20 is cut and flattened by using a blade cutting device as shown in fig. 5 (B). In fig. 5(B), reference numeral 22 denotes a bit cutting unit of the bit cutting device, which includes: a main shaft 24 driven to rotate; a seat 26 fixed to a distal end of the spindle 24; and a cutter wheel 28 detachably mounted on the seat 26. A tip tool 30 is detachably attached to the tip end of the tip wheel 28, and the tip tool 30 has a cutting edge made of diamond.
In the flattening step of the tape 20, the wafer 11 is suction-held by the chuck table 32 of the tip cutting device to expose the tape 20. After the cutter head tool 30 is positioned at a height position at which the cutter head tool can cut the belt 20 to a predetermined depth, the chuck table 32 is moved in the direction of arrow a at a predetermined feed speed while the cutter head wheel 28 is rotated at, for example, about 2000rpm, and the belt 20 is subjected to rotary cutting using the cutter head tool 30.
In this rotary cutting, the machining feed is performed in the direction of arrow a without rotating the chuck table 32. If the tape 20 planarization step is carried out, a sufficient parallelism between the back surface 11b of the wafer 11 and the surface of the tape 20 can be obtained.
However, when the wafer 11 is bonded to the carrier plate 12 via the intermediate member 14, the tape 20 does not necessarily need to be bonded to the carrier plate 12 when the parallelism between the carrying surface (lower surface) of the carrier plate 12 and the back surface 11b of the wafer 11 can be sufficiently ensured.
After the pasting step shown in fig. 4 is performed or after the tape flattening step shown in fig. 5(B) is performed, a grinding step of grinding the back surface 11B of the wafer 11 is performed. In the grinding step, as shown in fig. 6, the carrier plate 12 is sucked and held by the chuck table 48 of the grinding apparatus, and the back surface 11b of the wafer 11 is exposed.
In fig. 6, the grinding unit 36 includes: a main shaft 38 driven to rotate; a wheel seat 40 fixed to a distal end of the main shaft 38; and a grinding wheel 42 detachably attached to the wheel base 40 by a plurality of screws 41. The grinding wheel 42 is composed of an annular wheel base 44 and a plurality of grindstones 46 fixedly attached to the outer periphery of the lower end of the wheel base 44 in an annular shape.
In the grinding step, while the chuck table 48 is rotated at, for example, 300rpm in the direction indicated by the arrow a, the grinding wheel 42 is rotated at, for example, 6000rpm in the direction indicated by the arrow b, and the grinding unit feed mechanism, not shown, is driven to bring the grindstone 46 of the grinding wheel 42 into contact with the back surface 11b of the wafer 11.
The grinding wheel 42 is then fed downward at a predetermined grinding feed speed by a predetermined amount. The thickness of the wafer 11 is measured using a contact or non-contact thickness gauge, and the wafer 11 is ground to a prescribed thickness (e.g., 100 μm).
The grinding step is not limited to the embodiment shown in fig. 6, and may be performed as follows: the back surface 11b of the wafer 11 corresponding to the central region 19 is ground to form a circular recess using a grinding wheel having approximately the radius of the wafer 11, and the back surface corresponding to the outer peripheral surplus region 21 is left to form an annular protrusion surrounding the circular recess.
After the grinding step is performed, in order to secure the subsequent operability, it is preferable to perform the transfer step as follows: as shown in fig. 7, the back surface 11b of the wafer 11 is bonded to a dicing tape T, and the outer peripheral portion of the dicing tape T is bonded to the ring-shaped frame F.
After the transfer step is performed, a peeling step of peeling the wafer 11 from the carrier plate 12 is performed. In embodiment 1 of the peeling step, as shown in fig. 8(a), the wafer 11 is held by suction via the dicing tape T by a chuck table (not shown), and the adhesive member 18 of the intermediate member 14 is cut and removed by the cutting unit 50. The cutting unit 50 includes: a main shaft 52 disposed in the vertical direction; and a cutting tool 54 attached to a distal end portion of the spindle 52.
In embodiment 1 of the peeling step, the cutting tool 54 rotating at a high speed in the arrow a direction is caused to cut into the adhesive member 18 of the intermediate member 14 from the side, and a chuck table, not shown, is rotated at a low speed in the arrow R1 direction to cut and remove the adhesive member 18. After removing the adhesive member 18, the carrier sheet 12 is peeled off together with the flexible member 16 from the wafer 11 stuck on the dicing tape T as shown in fig. 8 (B).
Next, embodiment 2 of the peeling step will be described with reference to fig. 9. In the peeling step of the present embodiment, a general cutting unit 50A having a spindle 52 extending in the horizontal direction is used.
The cutting tool 54 rotating at a high speed in the arrow a direction is cut into the vicinity of the lower end portion of the adhesive member 18 at the outer peripheral portion of the carrier plate 12, and a chuck table, not shown, is rotated at a low speed in the arrow R1 direction, thereby cutting and removing the adhesive member 18 together with the outer peripheral portion of the carrier plate 12.
Thus, as in the case shown in fig. 8(B), the carrier plate 12 can be removed together with the flexible member 16 from the wafer 11 stuck on the dicing tape T.

Claims (3)

1. A method of processing a wafer having on a surface: a central region in which a plurality of devices are arranged, the plurality of devices each having a plurality of bumps formed thereon; and a peripheral residual region surrounding the central region, wherein the wafer processing method comprises:
an intermediate member preparation step of preparing an intermediate member having a flexible member corresponding to the central region of the wafer and a bonding member disposed on an outer peripheral edge of the flexible member;
a bonding step of bonding the intermediate member to a carrier plate via the adhesive member and bonding the wafer to the intermediate member bonded to the carrier plate via the adhesive member in a state where the central region of the wafer is in contact with the flexible member;
a grinding step of grinding the back surface of the wafer after the pasting step is performed; and
a peeling step of peeling the wafer from the carrier plate after the grinding step is performed,
the flexible member is disposed only inside the adhesive member, and the flexible member absorbs the entire bump.
2. The method of processing a wafer according to claim 1,
the wafer processing method further includes a transfer step of attaching the wafer to a dicing tape having an outer peripheral portion attached to the ring frame after the grinding step is performed and before the peeling step is performed.
3. An intermediate member used in a processing method of a wafer, the surface of the wafer having: a central region in which a plurality of devices are arranged, the plurality of devices each having a plurality of bumps formed thereon; and a peripheral residual region surrounding the central region, wherein the intermediate member has:
a flexible member corresponding to the central region of the wafer; and
a bonding member corresponding to the outer peripheral residual region of the wafer disposed on the outer peripheral edge of the soft member,
the flexible member is disposed only inside the adhesive member, and the flexible member absorbs the entire bump.
CN201510249266.4A 2014-05-16 2015-05-15 Wafer processing method and intermediate member Active CN105097631B (en)

Applications Claiming Priority (2)

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JP2014101965A JP6385133B2 (en) 2014-05-16 2014-05-16 Wafer processing method and intermediate member
JP2014-101965 2014-05-16

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CN105097631B true CN105097631B (en) 2020-10-27

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KR (2) KR102455708B1 (en)
CN (1) CN105097631B (en)
DE (1) DE102015208977A1 (en)
TW (1) TWI660416B (en)

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GB2551732B (en) * 2016-06-28 2020-05-27 Disco Corp Method of processing wafer
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