TWI659520B - 附貫通電極半導體晶片用接著膜 - Google Patents

附貫通電極半導體晶片用接著膜 Download PDF

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TWI659520B
TWI659520B TW104109879A TW104109879A TWI659520B TW I659520 B TWI659520 B TW I659520B TW 104109879 A TW104109879 A TW 104109879A TW 104109879 A TW104109879 A TW 104109879A TW I659520 B TWI659520 B TW I659520B
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semiconductor wafer
electrode
inorganic filler
adhesive film
average particle
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TW104109879A
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TW201606980A (zh
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永田麻衣
竹田幸平
江南俊夫
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日商積水化學工業股份有限公司
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Abstract

本發明之目的在於提供一種附貫通電極半導體晶片用接著膜，其用以於半導體晶圓上積層多個附貫通電極半導體晶片，可抑制空隙並且良好地連接貫通電極，可抑制於半導體晶片之周圍突出的毛邊之長度。本發明係一種附貫通電極半導體晶片用接著膜，其用以於半導體晶圓上積層多個附貫通電極半導體晶片，最低熔融黏度為50~2500Pa‧s，且140℃之觸變(thixotropic)指數為8以下。

Description

附貫通電極半導體晶片用接著膜
本發明係關於一種附貫通電極半導體晶片用接著膜，其用以於半導體晶圓上積層多個附貫通電極半導體晶片，可抑制空隙並且將貫通電極良好地電極接合，可抑制於半導體晶片之周圍突出的毛邊之長度。
近年來，使用具有由焊料等構成之突出電極(凸塊)之半導體晶片的覆晶構裝受到關注。
覆晶構裝中，通常使用於基板上接合半導體晶片後注入密封樹脂之方法。於專利文獻1中記載有黏度為50Pa‧sec以下(25℃)、注入時之黏度為2Pa‧sec以下之密封樹脂。
又，近年來，隨著半導體晶片之小型化推進，電極間之間距亦變得越來越狹窄，又，隨此半導體晶片彼此或半導體晶片與基板間之間隙變狹窄，故並不於接合後注入密封樹脂，而進行經由預先塗佈於基板上之液狀接著劑接合半導體晶片之方法。於專利文獻2中記載有硬化前之觸變(thixotropic)指數為1.1~4.0，可維持形狀而塗佈之液狀環氧樹脂組成物。
進而，亦施行經由預先貼附於基板或半導體晶片之接著膜 (NCF)而接合半導體晶片之方法。於專利文獻3中，記載有最小熔融黏度於40PaS~5100PaS之範圍之片狀接著劑。又，於專利文獻3中記載有一種片狀接著劑，針對因壓接而片狀接著劑之一部分於水平方向滲出並自半導體元件之側面折繞至上表面之問題，該文獻中記載之片狀接著劑可較佳地抑制接著劑向側方溢出，不易產生因多餘接著劑之溢出而導致之不合格品。
然而，此種方法有於接合時於電極間產生氣泡(空隙)之情況，又，因加熱而使「電極接合」與「接著膜之硬化」同時進行，故不容易同時實現精度高之電極接合與空隙抑制。
另一方面，近年來，於覆晶構裝中，將多個半導體晶片積層而使器件飛躍性地高性能化、小型化之使用TSV(直通矽穿孔/Through Silicon via)之三維積層技術受到關注。
TSV積層技術中，通常於半導體晶圓上之分隔為格子狀之各接合部位，經由接著膜將多個附貫通電極半導體晶片(TSV晶片)多層積層，此後沿著格子狀之切割線切割半導體晶圓，藉此製造多層半導體晶片積層體。
然而，由於將大小一致之半導體晶片多層積層，故於半導體晶片之周圍接著膜呈毛邊狀地突出成為問題。此種毛邊(邊緣部、端部)可於經積層之半導體晶片間之任一部位產生，若毛邊長則於切割時毛邊剝落，污染周邊而引起製品不良。切割線之間隔越大，毛邊即便長，於切割時亦不會剝落，但就生產性之觀點而言，較理想為縮小切割線之間隔。
又，例如，亦可將專利文獻3中記載之片狀接著劑應用於TSV積層技術，但由於該片狀接著劑並非為了於將半導體晶片多層積層之情形，而是為了於基板上接合半導體晶片之情形時抑制接著劑向側方之溢出而設計者，故並未充分抑制毛邊之長度。
專利文獻1：國際公開第08/018557號
專利文獻2：日本特開2007-51184號公報
專利文獻3：日本特開2007-9022號公報
本發明之目的在於提供一種附貫通電極半導體晶片用接著膜，其用以於半導體晶圓上積層多個附貫通電極半導體晶片，可抑制空隙並且將貫通電極良好地電極接合，可抑制於半導體晶片之周圍突出的毛邊之長度。
本發明係一種附貫通電極半導體晶片用接著膜，其用以於半導體晶圓上積層多個附貫通電極半導體晶片，最低熔融黏度為50~2500Pa‧s，且140℃之觸變指數為8以下。
以下，對本發明進行詳細敍述。
本發明人等發現一種用以於半導體晶圓上積層多個附貫通電極半導體晶片之附貫通電極半導體晶片用接著膜，其藉由將最低熔融黏度與140℃之觸變指數調整為特定之狹窄範圍，而可抑制空隙並且將貫通電極良好地電極接合，進而，於半導體晶片之周圍突出的毛邊之量變少。進而，本發明人等發現，藉由使用此種附貫通電極半導體晶片用接著膜， 不僅毛邊之量變少，由於附貫通電極半導體晶片用接著膜與半導體晶片之周圍熔合並以液滴成長之方式形成大致半球狀而突出，故難以產生長毛邊，以至完成本發明。
本發明之附貫通電極半導體晶片用接著膜用以於半導體晶圓上積層多個附貫通電極半導體晶片。
本發明之附貫通電極半導體晶片用接著膜之最低熔融黏度為50~2500Pa‧s，且140℃之觸變指數為8以下。藉由具有此種狹窄範圍之最低熔融黏度與140℃之觸變指數，本發明之附貫通電極半導體晶片用接著膜可抑制空隙並且將貫通電極良好地電極接合，進而，於半導體晶片之周圍突出的毛邊之量變少。進而，由於本發明之附貫通電極半導體晶片用接著膜與半導體晶片之周圍熔合並以液滴成長之方式形成大致半球狀而突出，故難以產生長毛邊。
若上述最低熔融黏度未達50Pa‧s，則於附貫通電極半導體晶片之接合時於電極間容易產生空隙。若上述最低熔融黏度超過2500Pa‧s，則容易阻礙貫通電極之電極接合。上述最低熔融黏度之較佳下限為70Pa‧s，較佳之上限為2300Pa‧s，更佳之下限為100Pa‧s，更佳之上限為2000Pa‧s。
再者，所謂最低熔融黏度，係自常溫至焊料熔點之溫度域中之最低複數黏度η＊min，可藉由對附貫通電極半導體晶片用接著膜使用流變儀(例如REOLOGICA公司製造之STRESSTECH)，於樣品厚度600μm、應變控制(1rad)、頻率10Hz、升溫速度20℃/min之條件下，於測量溫度範圍自60℃至300℃進行測量而求出。
若上述140℃之觸變指數超過8，則無法充分抑制於半導體晶片之周圍突出的毛邊之長度，於切割時毛邊剝落，污染周邊而引起製品不良。上述140℃之觸變指數之較佳上限為7，更佳之上限為6。又，上述140℃之觸變指數之下限並無特別限定，但就保持膜形狀之觀點而言，較佳之下限為1.5。
再者，所謂140℃之觸變指數，係{複數黏度η＊(1Hz)}/{複數黏度η＊(10Hz)}之值，可藉由對附貫通電極半導體晶片用接著膜使用流變儀(例如REOLOGICA公司製造之STRESSTECH)，於樣品厚度600μm、應變控制(1rad)、頻率1Hz或10Hz、溫度140℃之條件下進行測量而求出。再者，於在半導體晶圓上積層多個附貫通電極半導體晶片時，由於附貫通電極半導體晶片用接著膜於硬化前暴露於80~160℃左右之溫度而一定程度發生熔融，故測量140℃之觸變指數作為該溫度範圍中之代表性觸變指數。
作為將上述最低熔融黏度與上述140℃之觸變指數調整為上述範圍之方法，例如較佳可列舉如下方法：對含有熱硬化性樹脂及熱硬化劑之本發明之附貫通電極半導體晶片用接著膜進而摻合無機填料。其中，較佳為調整無機填料之平均粒徑及含量之方法，或控制無機填料之摻合方法之方法。
作為調整上述無機填料之平均粒徑及含量之方法，可列舉併用平均粒徑不同之2種以上的無機填料之方法。更具體而言，例如可列舉併用平均粒徑10~100nm之無機填料(A)，與平均粒徑150~500nm之無機填料(B)之方法。如此，藉由併用相對而言平均粒徑小之無機填料 (A)與相對而言平均粒徑大之無機填料(B)，而容易將上述140℃之觸變指數調整為上述範圍，結果，通常被認為熔融時之觸變指數的調整困難之膜狀接著劑，即本發明之附貫通電極半導體晶片用接著膜變得容易調整熔融時之觸變指數。
關於調整上述無機填料之平均粒徑及含量之方法，若無機填料(A)之平均粒徑未達10nm，則有附貫通電極半導體晶片用接著膜之流動性降低，而無法進行適當之電極接合之情況。若上述無機填料(A)之平均粒徑超過100nm，則接近上述無機填料(B)之平均粒徑，故有幾乎無法獲得併用平均粒徑不同之2種以上無機填料的效果之情況。上述無機填料(A)之平均粒徑之更佳下限為15nm，更佳上限為80nm。
再者，無機填料之平均粒徑可藉由例如穿透式電子顯微鏡、掃描式電子顯微鏡、測量重量平均粒徑之動態光散射式測量裝置(例如貝克曼庫爾特公司製造之N4 PLUS SUBMICRON粒子分析裝置等)等而測量。
關於調整上述無機填料之平均粒徑及含量之方法，若無機填料(B)之平均粒徑未達150nm，則接近上述無機填料(A)之平均粒徑，故有幾乎無法獲得併用平均粒徑不同之2種以上無機填料的效果之情況。若上述無機填料(B)之平均粒徑超過500nm，則有於電極間夾入上述無機填料(B)之情況，或附貫通電極半導體晶片用接著膜之透光性降低，無法獲取半導體晶圓與附貫通電極半導體晶片之對準的情況。上述無機填料(B)之平均粒徑之更佳下限為200nm，更佳之上限為400nm。
關於調整上述無機填料之平均粒徑及含量之方法，較佳為附貫通電極半導體晶片用接著膜中之無機填料(A)之含量為5~40重量 %、無機填料(B)之含量為5~50重量%。若該等無機填料之含量脫離上述範圍，則有難以調整上述最低熔融黏度與上述140℃之觸變指數之情況。
上述無機填料(A)之含量之更佳下限為10重量%，更佳上限為38重量%，進而較佳之下限為15重量%，進而較佳之上限為35重量%。
上述無機填料(B)之含量之更佳下限為10重量%，更佳上限為47重量%，進而較佳之下限為15重量%，進而較佳之上限為45重量%。
上述無機填料之原材料並無特別限定，例如可列舉：煙燻二氧化矽、膠體二氧化矽等二氧化矽；氧化鋁；氮化鋁；氮化硼；氮化矽；玻璃粉末；玻璃料(glass frit)等。
作為控制上述無機填料之摻合方法之方法，可舉如下方法：於將無機填料以外之成分混合而得之混合物中，分多次添加使無機填料懸浮於溶劑中而成之無機填料懸浮液而調整樹脂組成物，使用該樹脂組成物製造附貫通電極半導體晶片用接著膜。若一次性大量添加無機填料，則產生無機填料之凝聚而分散性變差，難以將140℃之觸變指數調整為所期望之範圍。藉由分多次添加使無機填料懸浮於溶劑中而成之無機填料懸浮液，可防止無機填料之凝聚，而獲得具有所期望之觸變指數之附貫通電極半導體晶片用接著膜。
於上述控制無機填料之摻合方法的方法中所使用之無機填料並無特別限定，例如，可單獨使用上述無機填料(A)，可單獨使用上述無機填料(B)，亦可將上述無機填料(A)與無機填料(B)併用。又，亦可將上述無機填料(A)及/或無機填料(B)之含量設為與上述調整無 機填料之平均粒徑及含量的方法相同之範圍。
再者，藉由使本發明之附貫通電極半導體晶片用接著膜含有上述無機填料，不僅容易將上述最低熔融黏度與上述140℃之觸變指數調整為上述範圍，亦可降低附貫通電極半導體晶片用接著膜之硬化後之線膨脹率，可良好地防止對半導體晶片等產生應力及焊料等導通部分產生龜裂。
上述無機填料整體之含量並無特別限定，相對於下述熱硬化性樹脂與高分子化合物之合計100重量份，較佳之下限為5重量份，較佳之上限為500重量份。若上述無機填料整體之含量未達5重量份，則有幾乎無法獲得添加上述無機填料之效果之情況。若上述無機填料整體之含量超過500重量份，則附貫通電極半導體晶片用接著膜之硬化後的線膨脹率降低，但拉伸彈性模數上升，有容易產生對半導體晶片等之應力及焊料等導通部分之龜裂的情況。上述無機填料整體之含量之更佳下限為10重量份，更佳之上限為400重量份，進而較佳之下限為15重量份，進而較佳之上限為300重量份。
本發明之附貫通電極半導體晶片用接著膜較佳含有熱硬化性樹脂及熱硬化劑。
上述熱硬化性樹脂並無特別限定，例如可列舉藉由加成聚合、聚縮合、聚加成、加成縮合、開環聚合等反應而硬化之化合物。作為上述熱硬化性樹脂，具體而言，例如可列舉：尿素樹脂、三聚氰胺樹脂、酚樹脂、間苯二酚樹脂、環氧樹脂、丙烯酸樹脂、聚酯樹脂、聚醯胺樹脂、聚苯并咪唑樹脂、鄰苯二甲酸二烯丙酯樹脂、二甲苯樹脂、烷基苯樹脂、環氧丙 烯酸酯樹脂、矽樹脂、胺基甲酸酯樹脂等。
上述環氧樹脂並無特別限定，例如可列舉軟化點為150℃以下之環氧樹脂、於常溫下為液體或晶質固體之環氧樹脂等。該等環氧樹脂可單獨使用，亦可將二種以上併用。
於含有上述環氧樹脂之情形時，本發明之附貫通電極半導體晶片用接著膜進而亦可含有具有可與上述環氧樹脂反應之官能基的高分子化合物(亦簡稱為高分子化合物)。上述高分子化合物發揮作為造膜成分之作用。又，藉由含有上述高分子化合物，而附貫通電極半導體晶片用接著膜之硬化物具有韌性，可呈現優異之耐衝擊性。
上述高分子化合物並無特別限定，例如可列舉具有胺基、胺甲酸乙酯基、亞胺基、羥基、羧基、環氧基等之高分子化合物等。其中，較佳為具有環氧基之高分子化合物。藉由含有上述具有環氧基之高分子化合物，而附貫通電極半導體晶片用接著膜之硬化物兼具源自上述環氧樹脂之優異機械強度、耐熱性及耐濕性，以及源自上述具有環氧基之高分子化合物之優異韌性，藉此可呈現高接合可靠性及連接可靠性。
上述具有環氧基之高分子化合物只要為於末端及/或側鏈(側鏈位，pendant position)具有環氧基之高分子化合物則無特別限定，例如可列舉：含環氧基之丙烯酸橡膠、含環氧基之丁二烯橡膠、雙酚型高分子量環氧樹脂、含環氧基之苯氧基樹脂、含環氧基之丙烯酸樹脂、含環氧基之胺基甲酸酯樹脂、含環氧基之聚酯樹脂等。
上述熱硬化劑並無特別限定，例如可列舉：酚系硬化劑、硫醇系硬化劑、胺系硬化劑、酸酐系硬化劑等。
上述熱硬化劑之含量並無特別限定，相對於上述熱硬化性樹脂與上述高分子化合物之合計100重量份，較佳之下限為5重量份，較佳之上限為150重量份。若上述熱硬化劑之含量未達5重量份，則附貫通電極半導體晶片用接著膜之硬化物變硬變脆，故有接合可靠性惡劣之情況。上述熱硬化劑之含量超過150重量份，亦有附貫通電極半導體晶片用接著膜之接合可靠性降低之情況。上述熱硬化劑之含量之更佳下限為10重量份，更佳上限為140重量份。
本發明之附貫通電極半導體晶片用接著膜進而亦可含有硬化促進劑。
上述硬化促進劑並無特別限定，較佳為咪唑化合物。由於上述咪唑化合物與上述環氧樹脂之反應性高，故藉由含有上述環氧樹脂與上述咪唑化合物，而附貫通電極半導體晶片用接著膜之速硬化性提昇。
本發明之附貫通電極半導體晶片用接著膜於不阻礙本發明之效果之範圍內亦可含有稀釋劑。上述稀釋劑並無特別限定，較佳組人附貫通電極半導體晶片用接著膜之硬化系統中的反應性稀釋劑。其中，為了不使附貫通電極半導體晶片用接著膜之接合可靠性惡化，更佳於1分子中具有2個以上官能基之反應性稀釋劑。
上述稀釋劑之含量並無特別限定，相對於上述熱硬化性樹脂與上述高分子化合物之合計100重量份，較佳之下限為1重量份，較佳之上限為300重量份。若上述稀釋劑之含量未達1重量份，則有幾乎無法獲得添加上述稀釋劑之效果之情況。若上述稀釋劑之含量超過300重量份，則附貫通電極半導體晶片用接著膜之硬化物變硬變脆，故有接合可靠 性惡劣之情況。上述稀釋劑之含量之更佳下限為5重量份，更佳上限為200重量份。
本發明之附貫通電極半導體晶片用接著膜視需要亦可含有無機離子交換體。上述無機離子交換體之含量並無特別限定，於本發明之附貫通電極半導體晶片用接著膜中之較佳下限為1重量%，較佳上限為10重量%。
本發明之附貫通電極半導體晶片用接著膜此外視需要亦可含有防滲出劑、矽烷偶合劑、助熔劑或增黏劑等添加劑。
製造本發明之附貫通電極半導體晶片用接著膜之方法並無特別限定，例如可舉視需要摻合特定量之熱硬化性樹脂、熱硬化劑、硬化促進劑、高分子化合物、無機填料、溶劑、其他添加劑等並加以混合，將所獲得之樹脂組成物塗佈於脫模膜上並進行乾燥之方法等。上述混合之方法並無特別限定，例如可列舉使用勻相分散機、萬能混合機、班布里混合機、捏合機等之方法。
本發明之附貫通電極半導體晶片用接著膜係用以於半導體晶圓上積層多個附貫通電極半導體晶片。
使用本發明之附貫通電極半導體晶片用接著膜於半導體晶圓上積層多個附貫通電極半導體晶片的方法並無特別限定，較佳包括如下步驟之方法：於半導體晶圓上之接合部位經由本發明之附貫通電極半導體晶片用接著膜預接著第1附貫通電極半導體晶片之步驟(1)、於上述第1附貫通電極半導體晶片上經由本發明之附貫通電極半導體晶片用接著膜預接著第2附貫通電極半導體晶片之步驟(2)、視需要重複上述步驟(2)之步驟 (3)，及對所獲得之預接著體進行加熱而進行貫通電極之電極接合之步驟(4)。
於上述步驟(1)中，於上述半導體晶圓上之接合部位預接著上述第1附貫通電極半導體晶片的方法並無特別限定，例如可舉如下方法等：於將本發明之附貫通電極半導體晶片用接著膜供給至上述第1附貫通電極半導體晶片後，使用覆晶接合器等構裝用裝置將上述第1附貫通電極半導體晶片對位於上述半導體晶圓上之接合部位，並對本發明之附貫通電極半導體晶片用接著膜於特定溫度(亦稱為預接著溫度)加熱特定時間(亦稱為預接著時間)。
將本發明之附貫通電極半導體晶片用接著膜供給至上述第1附貫通電極半導體晶片的方法並無特別限定，例如可列舉：將本發明之附貫通電極半導體晶片用接著膜層壓於附貫通電極半導體晶片之方法、於將本發明之附貫通電極半導體晶片用接著膜層壓於附貫通電極半導體晶圓後，單片化為附貫通電極半導體晶圓之方法等。
藉由控制上述預接著溫度及上述預接著時間，可不使本發明之附貫通電極半導體晶片用接著膜完全硬化而使上述第1附貫通電極半導體晶片一定程度地接著(即預接著)於上述半導體晶圓上之接合部位。再者，於此種預接著而成之狀態下，貫通電極尚未電極接合。貫通電極之電極接合於下述步驟(4)中進行。
上述預接著溫度並無特別限定，採用可預接著而且低於本發明之附貫通電極半導體晶片用接著膜的硬化溫度之溫度即可，與本發明之附貫通電極半導體晶片用接著膜之硬化溫度之差的較佳下限為10℃，較佳上限為 200℃，更佳之下限為15℃，更佳之上限為150℃。上述預接著溫度具體而言，較佳為40~200℃左右，更佳為60~180℃左右。
上述預接著時間較佳為0.1~60秒。
於上述步驟(2)及上述步驟(3)中，使用與上述步驟(1)相同之方法將附貫通電極半導體晶片預接著即可。
藉由進行該等步驟，可對上述預接著於半導體晶圓上之多個附貫通電極半導體晶片一齊進行電極接合，與逐層重疊附貫通電極半導體晶片並依序進行電極接合之情形相比，可提昇生產性。進而，藉由對上述半導體晶圓上之多個預接著體一齊進行電極接合，而可進一步提昇生產性。
於上述步驟(4)中，加熱上述預接著體而進行貫通電極之電極接合之方法並無特別限定，例如可列舉如下方法：於貫通電極為焊料電極之情形時，使用覆晶接合器等構裝用裝置，以60~220℃左右之接觸溫度(使電極接觸之溫度)加熱0.1~60秒左右後，以230~300℃左右之焊料熔融溫度以上之溫度加熱0.1~60秒左右。
藉由控制加熱條件，而可良好地進行電極接合。又，亦可藉由加熱條件而使本發明之附貫通電極半導體晶片用接著膜完全硬化而良好地接著多個附貫通電極半導體晶片。
上述步驟(4)中，較佳對最上層之附貫通電極半導體晶片進行按壓，而進行貫通電極之電極接合，並且將本發明之附貫通電極半導體晶片用接著膜填充於密封區域。
上述按壓時之壓力並無特別限定，較佳為1~200N。又，對每個電極之壓力較佳為0.0001~1N。若上述對每個電極之壓力未達0.0001N，則有 電極彼此不接觸之情況。若上述對每個電極之壓力超過1N，則電極被過分擠壓而與相鄰之電極接觸，有產生短路之情況。
於上述步驟(4)中，本發明之附貫通電極半導體晶片用接著膜可完全硬化，亦可硬化至中間階段。於在電極接合時本發明之附貫通電極半導體晶片用接著膜不完全硬化而硬化至中間階段之情形時，亦可進行於電極接合後使本發明之附貫通電極半導體晶片用接著膜完全硬化之2階段加熱。
上述步驟(1)~(4)後，進而亦可另外進行使本發明之附貫通電極半導體晶片用接著膜完全硬化之步驟(5)。
視需要於電極接合後使本發明之附貫通電極半導體晶片用接著膜完全硬化即可，無須為了同時進行電極接合與本發明之附貫通電極半導體晶片用接著膜之硬化而一次性加熱，故可防止因附貫通電極半導體晶片之厚度或電極高度之偏差而無法均勻地加熱，良率降低之問題。
藉由進行上述步驟(1)~(4)及視需要進行上述步驟(5)，而可使用本發明之附貫通電極半導體晶片用接著膜於半導體晶圓上積層多個附貫通電極半導體晶片。
圖1係表示藉由本發明之附貫通電極半導體晶片用接著膜於半導體晶圓上積層有多個附貫通電極半導體晶片的狀態之一例之剖視示意圖。於圖1中，藉由本發明之附貫通電極半導體晶片用接著膜1於半導體晶圓3上積層有多個附貫通電極半導體晶片2。
藉由使用本發明之附貫通電極半導體晶片用接著膜1，可抑制於半導體晶片之周圍突出的毛邊5之長度。因此，沿著格子狀之切割線使用切割 刀片4切割半導體晶圓3時，可抑制毛邊剝落污染周邊。又，由於可抑制毛邊5之長度，故可縮小切割線之間隔，可進一步提昇生產性。
根據本發明，可提供一種附貫通電極半導體晶片用接著膜，其用以於半導體晶圓上積層多個附貫通電極半導體晶片，可抑制空隙並且將貫通電極良好地電極接合，可抑制於半導體晶片之周圍突出的毛邊之長度。
1‧‧‧本發明之附貫通電極半導體晶片用接著膜
2‧‧‧附貫通電極半導體晶片
3‧‧‧半導體晶圓
4‧‧‧切割刀片
5‧‧‧毛邊
圖1係表示藉由本發明之附貫通電極半導體晶片用接著膜於半導體晶圓上積層有多個附貫通電極半導體晶片的狀態之一例之剖視示意圖。
以下，列舉實施例對本發明之態樣進行更詳細之說明，但本發明並不僅限於該等實施例。
(實施例1)
(1)接著膜之製造
(A法)
根據表2、3記載之組成，於除無機填料以外亦將下述及表1所示之材料添加於溶劑中加以攪拌混合而獲得之混合物中，分2次每次一半量地添加預先使無機填料懸浮於溶劑中而成之無機填料懸浮液，加以攪拌混合，製備樹脂組成物。將所獲得之樹脂組成物塗佈於脫模膜上，使其乾燥 而獲得接著膜。
(B法)
根據表2、3記載之組成，將下述及表1所示之材料添加於溶劑中，加以攪拌混合而製備樹脂組成物。將所獲得之樹脂組成物塗佈於脫模膜上，使其乾燥而獲得接著膜。
1.熱硬化性樹脂
雙酚A固體環氧樹脂(1004AF，三菱化學公司製造)
雙酚F液狀環氧樹脂(EXA-830CRP，迪愛生公司製造)
二環戊二烯型環氧樹脂(HP7200HH，迪愛生公司製造)
縮水甘油胺型環氧樹脂(EP-4088L，艾迪科公司製造)
2.高分子化合物
丙烯酸樹脂(G-2050M，日油公司製造)
3.熱硬化劑及硬化促進劑
酸酐(YH-309，三菱化學公司製造)
咪唑(2MAOK-PW，四國化成工業公司製造)
4.無機填料
4-1.無機填料(A)
球狀二氧化矽(YA010C-SP1，Admatechs公司製造，平均粒徑0.01μm)
球狀二氧化矽(YA050C-SP1，Admatechs公司製造，平均粒徑0.05μm)
球狀二氧化矽(YC100C-SP1，Admatechs公司製造，平均粒徑0.1 μm)
4-2.無機填料(B)
球狀二氧化矽(SE1050-SPJ，Admatechs公司製造，平均粒徑0.3μm)
球狀二氧化矽(SE2050-SPJ，Admatechs公司製造，平均粒徑0.5μm)
(2)最低熔融黏度及140℃之觸變指數之測量
對所獲得之接著膜使用流變儀(REOLOGICA公司製造之STRESSTECH)，於樣品厚度600μm、應變控制(1rad)、頻率10Hz、升溫速度20℃/min之條件下於測量溫度範圍自60℃至300℃進行測量，藉此求出自常溫至焊料熔點之溫度區域中之最低複數黏度η＊min作為最低熔融黏度。
又，對所獲得之接著膜使用流變儀(REOLOGICA公司製造之STRESSTECH)，於樣品厚度600μm、應變控制(1rad)、頻率1Hz或10Hz、溫度140℃之條件下進行測量，藉此求出{複數黏度η＊(1Hz)}/{複數黏度η＊(10 Hz)}之值作為140℃之觸變指數。
將結果示於表2、3。
<評價>
對實施例及比較例中獲得之接著膜進行下述評價。
將結果示於表2、3。
(1)於半導體晶片之周圍突出的毛邊之長度之評價
準備矽晶片A1、A2、A3(厚度為50μmt，且於單面形成有鍍敷有 20μm、高度10μm之Ni/Au之焊墊，於另一面形成有20μm、高度10μm之銅凸塊，於銅凸塊上形成有厚度5μm之Sn-3.5 Ag焊料層的TSV晶片)，及矽晶片B(於單面形成有鍍敷有20μm、高度10μm之Ni/Au之焊墊，於另一面未形成焊墊或凸塊之晶片)。
對矽晶片A1、A2、A3之形成有具有焊料層的銅凸塊之面使用真空貼合機(ATM-812M，Takatori公司製造)於階段溫度80℃、真空度100Pa‧s之條件下層壓接著膜，其後，利用切割器切斷去除自晶片溢出之多餘接著膜。
根據如下所示之方法，製作10個預接著體。
使用覆晶接合器(FC3000S，東麗工程公司製造)，使矽晶片A1之附著有接著膜之面對矽晶片B於階段溫度60℃、接合工具(bonding tool)溫度(預接著溫度)100℃，以2秒鐘、20N進行預接著。繼而，使矽晶片A2之附著有接著膜之面於相同條件下預接著於矽晶片A1之未附著接著膜之面。進而，使矽晶片A3之附著有接著膜之面，於相同條件下預接著於矽晶片A2之未附著接著膜之面。藉此，製作預接著體，該預接著體經由接著膜於矽晶片B之形成有焊墊之面側3層積層有矽晶片A1、A2、A3。再者，於該時點，各個矽晶片之具有焊料層之銅凸塊尚未焊料接合。
繼而，將10個預接著體於大氣壓下、於以下之溫度條件加熱而將各個矽晶片之具有焊料層之銅凸塊焊料接合。再者，於負重20N下進行。其後，於170℃加熱30分鐘，使接著膜完全硬化，獲得10個半導體裝置。
(溫度條件)
1.100℃加熱5秒鐘
2.5秒鐘自100℃升溫至280℃
3.於280℃維持5秒鐘
4.5秒鐘自280℃降溫至100℃
將所獲得之10個半導體裝置於光學顯微鏡下放大至300倍，自上方對各個處於觀察視野中之半導體裝置拍攝照片。對所獲得之各照片進行觀察，並對各個半導體裝置選擇於矽晶片之周圍突出的毛邊之長度最長的部分並測量其長度(毛邊之最大長度)。對10個半導體裝置求出毛邊之最大長度之平均值，將平均值為100μm以下者評價為○，將超過100μm者評價為×。再者，測量毛邊之最大長度時，測量自毛邊延伸之根部的半導體晶片之端部至毛邊距離半導體晶片之端部最遠的部分之長度。
(2)貫通電極之接合形狀
對上述(1)中獲得之半導體裝置進行剖面研磨(X-seciton)，並藉由掃描式電子顯微鏡(SEM)(倍率：3000倍)觀察研磨面，對凸塊之接合形狀進行評價。將於負重20N下未收縮之接合形狀者評價為◎，將於負重40N下未收縮之形狀者評價為○，將於負重40N下有收縮之接合形狀者評價為△，將於負重40N下於凸塊間有間隙者評價為×。
(3)空隙
對上述(1)中獲得之半導體裝置進行平面研磨，藉由光學顯微鏡觀察研磨面，對凸塊間及面內之空隙進行評價。將不論於凸塊間抑或面內均無空隙者評價為○，將於凸塊間無空隙但於面內存在空隙者評價為△，將不論於凸塊間抑或面內均存在空隙者評價為×。
[產業上之可利用性]
根據本發明，可提供一種附貫通電極半導體晶片用接著膜，其用以於半導體晶圓上積層多個附貫通電極半導體晶片，可抑制空隙並且良好地連接貫通電極，可抑制於半導體晶片之周圍突出的毛邊之長度。

Claims (2)

  1. 一種附貫通電極半導體晶片用接著膜，用以於半導體晶圓上積層多個附貫通電極半導體晶片，其特徵在於：最低熔融黏度為50~2500Pa‧s，且140℃之觸變(thixotropic)指數為8以下，該附貫通電極半導體晶片用接著膜含有平均粒徑10~100nm之無機填料(A)10~40重量%、及平均粒徑150~500nm之無機填料(B)10~50重量%。
  2. 如申請專利範圍第1項之附貫通電極半導體晶片用接著膜，其含有平均粒徑10~100nm之無機填料(A)、平均粒徑150~500nm之無機填料(B)，或平均粒徑10~100nm之無機填料(A)及平均粒徑150~500nm之無機填料(B)兩者，該附貫通電極半導體晶片用接著膜係使用藉由如下方法獲得之樹脂組成物製造：於將除該無機填料以外之成分加以混合而得之混合物，分多次添加使該無機填料懸浮於溶劑而成之無機填料懸浮液。
TW104109879A 2014-04-22 2015-03-27 附貫通電極半導體晶片用接著膜 TWI659520B (zh)

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