TWI659496B - 承載盤 - Google Patents

承載盤 Download PDF

Info

Publication number
TWI659496B
TWI659496B TW103135936A TW103135936A TWI659496B TW I659496 B TWI659496 B TW I659496B TW 103135936 A TW103135936 A TW 103135936A TW 103135936 A TW103135936 A TW 103135936A TW I659496 B TWI659496 B TW I659496B
Authority
TW
Taiwan
Prior art keywords
sub
inner ring
outer ring
carrier
maximum width
Prior art date
Application number
TW103135936A
Other languages
English (en)
Other versions
TW201546945A (zh
Inventor
黃源宏
黃崇桂
Original Assignee
晶元光電股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 晶元光電股份有限公司 filed Critical 晶元光電股份有限公司
Publication of TW201546945A publication Critical patent/TW201546945A/zh
Application granted granted Critical
Publication of TWI659496B publication Critical patent/TWI659496B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

本發明揭露一承載盤，包含：一本體；複數個分布在本體上用於承載晶圓的承載舟；一與本體連接的內圈；以及一可自本體拆卸且與內圈分離的外圈；其中內圈以及外圈將承載舟彼此分離。

Description

承載盤
本發明揭示一種承載盤，特別是關於一種用於磊晶成長系統的承載盤。
隨著科技日新月異，半導體光電元件在資訊的傳輸以及能量的轉換上佔有極大的貢獻。例如，半導體光電元件可應用於許多不同的系統，包括光纖通訊、光學儲存及軍事系統等。一般習知的半導體光電元件的製程包含提供晶圓、磊晶成長、薄膜成長、擴散\離子佈植、黃光步驟以及蝕刻等步驟。
在上述各種製作過程之中，磊晶成長步驟大多是藉由化學氣相沉積(chemical vapor deposition，CVD)系統或分子束磊晶(molecular beam epitaxy，MBE)系統進行生長。其中，化學氣相沉積系統由於生產速率較快，一般較常為業界所採用。在化學氣相沉積系統中成長磊晶層時，會搭配承載盤以承載晶圓。於成長磊晶層之過程中，沉積物會累積在承載盤的表面上。在承載盤使用一定的次數後，需要移除沉積物以避免後續成長磊晶層時，降低磊晶層的品質。其中一種移除沉積物的方法是敲打承載盤的表面以連同沉積物一同剝除承載盤最外層的表面。然而，此種方法易損壞承載盤的表面且會逐漸降低承載盤的厚度，因此考量到磊晶層的品質，損壞的承載盤便無法再使用，導致汰換承載盤的費用非常可觀。另一種移除沉積物的方法是烘烤承載盤，然而此種方式十分耗時，烘烤一次須花八小時左右，且承載盤於烘烤時，便無法用於成長磊晶層，因此造成生產率大幅下降。
本發明提供一承載盤，包含：一本體；複數個分布在本體上用於承載晶圓的承載舟；一與本體連接的內圈；以及一可自本體拆卸且與 內圈分離的外圈；其中內圈以及外圈將承載舟彼此分離。
底下藉由具體實施例配合所附的圖式詳加說明，當更容易瞭解本發明之目的、技術內容、特點及其所達成之功效。
10‧‧‧本體
13‧‧‧承載舟
121‧‧‧內圈
20‧‧‧外圈
11‧‧‧穿孔
1211‧‧‧內側
W‧‧‧徑向寬度
1212‧‧‧第一延伸部
21,22,23‧‧‧子元件
211,223,231‧‧‧外緣
212,222,232‧‧‧第二延伸部
w1,w2‧‧‧最大寬度
301‧‧‧孔洞
123‧‧‧上表面
131‧‧‧頂面
132‧‧‧邊緣
H‧‧‧高度
124‧‧‧第一定位結構
213‧‧‧第一表面
214‧‧‧第二表面
215‧‧‧第二定位結構
125‧‧‧凸部
216‧‧‧凹槽
40‧‧‧墊片
41‧‧‧通孔
221‧‧‧端部
第1圖為本發明一實施例之承載盤的示意圖。
第2圖為本發明一實施例之承載盤的分解圖。
第3圖為本發明一實施例之子元件的示意圖。
第4圖為本發明一實施例之承載盤的分解圖。
第5圖為本發明一實施例之承載盤的側視圖。
第6圖為本發明一實施例之承載盤的示意圖。
第7圖為本發明一實施例之承載盤的示意圖。
第8圖為本發明一實施例之承載盤的示意圖。
第9圖為本發明一實施例之子元件的示意圖。
第10圖為本發明一實施例之承載盤的局部放大圖。
第11圖為本發明一實施例之承載盤的示意圖。
第12圖為本發明一實施例之子元件的示意圖。
為讓本發明的上述特徵和優點能更明顯易懂，下文特舉實施例，並配合所附圖式作詳細說明如下。在圖式中，元件之形狀或厚度可擴大或縮小。需特別注意的是，圖中未繪示或描述之元件，可以是熟習此技藝之人士所知之形式。本發明所列舉之各實施例僅用以說明本發明，並非用以限制本發明之範圍。任何人對本發明所作之任何顯而易知之修飾或變更皆不脫離本發明之精神與範圍。
第1圖為本發明一實施例之承載盤的示意圖。第2圖為本發明一實施例之承載盤的分解圖。如第1圖以及第2圖所示，本發明一實施例之承載盤包含一本體10、複數個在本體10上呈圓形分布且彼此分離的承載舟13、一與本體10連接的內圈121，以及一可自本體10拆卸且與內圈121分離的外圈20，其中承載舟13用於承載晶圓。於本實施例中，本體10包含一穿孔11以及一環繞穿孔11的內側1211，因此，本體10為一具有一徑向寬度W的環形圈。內圈121以及外圈20將各承載舟13與其他的承載 舟13分離。於本實施例中，內圈121與本體10一體成型，故本體10與內圈121一體成型的部位之厚度大於本體10的其餘部位之厚度。內圈121更包含複數第一延伸部1212，各第一延伸部1212以徑向朝向外圈20延伸，且延伸方向遠離穿孔11。相較於內圈121，外圈20離穿孔11較遠。外圈20包含複數個可自本體10拆卸的子元件21。複數子元件21具有相同結構且彼此分離。第3圖為本發明一實施例之子元件21的示意圖。如第2圖以及第3圖所示，各子元件21包含一外緣211以及一第二延伸部212，第二延伸部212以徑向朝內自外緣211向內圈121以及穿孔11延伸。具體而言，各子元件21的第二延伸部212分別對齊第一延伸部1212，因此第二延伸部212與第一延伸部1212將各承載舟13與其他的承載舟13分離且圍繞承載舟13。於本實施例中，各子元件21的外緣211的曲率大致上吻合本體10的一外側1221的曲率。各子元件21的一最大寬度w1小於本體10的徑向寬度W。較佳的，各子元件21的最大寬度w1不大於本體10的徑向寬度W的一半。於本實施例中，各子元件21的第二延伸部212具有最大寬度w1。各子元件21與部分的其中一承載舟13相鄰，亦即，單一子元件21並不完全地環繞任一承載舟13。具體而言，各子元件21與兩個承載舟13相鄰。此外，外圈20的材料包含藍寶石(sapphire)、氮化硼(boron nitride)、石英(quartz)、碳化矽(silicon carbide)或石墨(graphite)。於一實施例中，外圈20的厚度大於晶圓的厚度。例如，外圈20的厚度至少是晶圓的厚度的三倍。具體而言，放置於承載舟13上的一晶圓其厚度為0.2毫米(mm)至0.6mm之間，外圈20的各子元件21的厚度為1mm至9mm之間。於一實施例中，本發明揭示之承載盤是用於成長組成為AlGaInP之磊晶層，而非用於成長三族氮化物的磊晶層。由於本發明揭示之承載盤包含可自本體10拆卸的外圈20，在敲打外圈20以去除表面的沉積物後，若外圈20嚴重受損，只需汰換受損的外圈20而不需汰換整個承載盤，因此可大幅降低維護承載盤的成本。進一步的，因為外圈20包含複數具有相同結構的子元件21，若其中一子元件21損壞或是累積太多沉積物，可另以一新的子元件21直接取代欲汰換的子元件21，而不需汰換一整個外圈20，因此可進一步降低承載盤的維護成本。此外，由於可以直接汰換單一子元件21，並不一定需要使用耗時的烘烤方法來去除沉積物，故大幅提升生產力。
第4圖為本發明一實施例之承載盤的分解圖。第5圖為本發明一實施例之承載盤的側視圖。如第1圖以及第4圖所示，於本實施例中，內圈121可自本體10拆卸，所以內圈121可分別與本體10和外圈20分離。內圈121包含一貫穿中心且與本體10的穿孔11對齊的孔洞301。於本實施例中，本體10放置內圈121的部位之厚度大致相等於本體10放置外圈20的部位之厚度。進一步的，內圈121環繞各承載舟13的一部分，因此，內圈121結合外圈20可實質上環繞整個各承載舟13。此外，內圈121的數目小於子元件21的數目。例如，於本實施例中，內圈121的數目為1，子元件21的數目為12。內圈121具有一最大寬度w2，最大寬度w2小於本體10的徑向寬度W。較佳的，內圈121的最大寬度w2不大於本體10的徑向寬度W的一半。於本實施例中，第一延伸部1212具有內圈121的最大寬度w2。具體而言，具有最大寬度w1的第二延伸部212分別對齊具有最大寬度w2的第一延伸部1212。此外，內圈121的厚度為1mm至9mm之間，且內圈121的厚度可相同或相異於子元件21的厚度。如第5圖所示，本體10包含一面對且支撐外圈(圖未示)以及內圈(圖未示)的上表面123。各承載舟13包含一頂面131以及一環繞頂面131的邊緣132。各晶圓是以座落於頂面131且被邊緣132環繞的方式分別放置在承載舟13上。各子元件21的厚度21相等或小於邊緣132自上表面123開始量測之高度H。例如，各子元件21的厚度為1mm至9mm之間，邊緣132的高度H為1mm至12mm之間。內圈121的材料包含藍寶石(sapphire)、氮化硼(boron nitride)、石英(quartz)、碳化矽(silicon carbide)或石墨(graphite)。
第6圖為本發明一實施例之承載盤的示意圖。如第6圖所示，本體10更包含一第一定位結構124，第一定位結構124形成於本體10的上表面123上且對應於子元件21的位置。各子元件21包含一面對本體10的上表面123的第一表面213、一相對於第一表面213第二表面214以及一形成於第一表面213上且與第一定位結構124結合的第二定位結構215。第一定位結構124與第二定位結構215可使子元件21穩固地與本體10連接。於一實施例中，第一定位結構124包含複數凸部125，各凸部125自上表面123凸出，第二定位結構215包含複數凹槽216，各凹槽216內凹成形於第一表面213，各凹槽216分別與其中一凸部125接合。各凹槽216的深 度小於第一表面213至第二表面214的距離，故當子元件21與本體10連接時，子元件21會覆蓋凸部125。因此，於一化學氣相沉積系統中，沉積物不會沉積於凹槽216以及凸部125周圍。於一實施例中，如第四圖所示，複數凸部125亦形成於上表面123上對應於內圈121的位置，複數凹槽(圖未示)內凹成形於內圈121的一面對上表面123的表面，各凹槽分別與其中一凸部125結合。
於一化學氣相沉積系統中，使用一現有技術之承載盤形成對照樣品1、2以及3之晶粒，並使用本發明揭示之承載盤形成樣品1至10之晶粒。結果如表1所示。
表1. 對照樣品1、2、3以及樣品1至10之結果
由表1可得知，樣品1至樣品10的良率皆高於對照樣品1至3的良率，且樣品1至樣品10的亮度不合格以及波長不合格的百分比皆分別低於對照樣品1至3的亮度不合格以及波長不合格的百分比，因此樣品1至樣品10的結果明顯較對照樣品1至3的結果佳。故，本發明揭示之承載盤有利於成長具有較佳的品質以及較高良率的磊晶層。
第7圖為本發明一實施例之承載盤的示意圖。如第7圖所示，於本實施例中，承載盤更包括複數個放置且分布於外圈20以及本體10之間的墊片40。各墊片40包含有一通孔41，各通孔41分別與第一定位結 構124的其中一凸部125結合。墊片40的材料包含藍寶石(sapphire)、氮化硼(boron nitride)、石英(quartz)、碳化矽(silicon carbide)或石墨(graphite)。藉由在本體10的上表面123以及子元件21之間堆疊複數墊片40，可調整自本體10的上表面123至子元件21的第二表面214之高度。此外，如第4圖所示，墊片亦可設置於本體10與內圈121之間以調整本體10與內圈121之間的間距。於一化學氣相沉積系統中，使用一現有技術之承載盤以及三個本發明之不同實施例之承載盤成長磊晶層，並比較最後製成的晶粒之波長均勻性。三個本發明之不同實施例之承載盤中，第一個承載盤不包含墊片40，第二個承載盤包含複數凸部125且各凸部125與一墊片40結合，第三個承載盤包含複數凸部125且各凸部125與兩個墊片40結合。形成於現有技術之承載盤、第一、第二以及第三個承載盤上的磊晶層，個別的波長分布之標準差分別為0.248%、0.152%、0.184%以及0.198%。故，由上述數據可得知，由於本發明揭示之承載盤有利於均勻加熱，因此使用本發明揭示之承載盤製得的晶粒具有較佳的波長均勻性。
第8圖為本發明一實施例之承載盤的示意圖。第9圖為本發明一實施例之子元件22的示意圖。第10圖為本發明一實施例之承載盤的局部放大圖。如第8以及第9圖所示，於本實施例中，各子元件22包含一外緣223，兩個相對的端部221，以及兩個第二延伸部222，其中各第二延伸部222徑向地自外緣223向內圈121以及穿孔11延伸且位於兩個端部221之間。如第10圖所示，任意一承載舟13的部分被其中一子元件22環繞。連續的三個承載舟13之中，位於中間的承載舟13是部分的介於兩個第二延伸部222之間，其他兩個承載舟13是部份的被端部221圍繞。單一子元件21並不完全地環繞任一承載舟13。各子元件22的兩個第二延伸部222對齊內圈121的其中兩個第一延伸部1212，因此子元件22與內圈121將各承載舟13與其他的承載舟13分離。各子元件22的外緣223的曲率大致上吻合本體10的外側1221的曲率。
第11圖為本發明一實施例之承載盤的示意圖。第12圖為本發明一實施例之子元件23的示意圖。如第11以及第12圖所示，於本實施例中，各子元件23包含一外緣231以及兩個位於兩端且徑向的自外緣231向內圈121以及穿孔11延伸的第二延伸部232。如第11圖所示，各子元件 23與部分的其中一承載舟13相鄰。各子元件23的兩個第二延伸部232對齊內圈121的其中兩個第一延伸部1212，因此子元件23與內圈121將各承載舟13與其他的承載舟13分離。
以上所述之實施例僅係為說明本發明之技術思想及特點，其目的在使熟習此項技藝之人士能夠瞭解本發明之內容並據以實施，當不能以之限定本發明之專利範圍，即大凡依本發明所揭示之精神所作之均等變化或修飾，仍應涵蓋在本發明之專利範圍內。

Claims (10)

  1. 一承載盤，包含：一本體；複數個分布在該本體上用於承載晶圓的承載舟；一與該本體連接的內圈；以及一可自該本體拆卸且與該內圈分離的外圈；其中該內圈以及該外圈將該些承載舟彼此分離，且該外圈包含複數個具有相同結構且彼此分離並可自該本體拆卸的子元件。
  2. 如申請專利範圍第1項所述的承載盤，其中各子元件包含一朝向內圈延伸的第二延伸部。
  3. 如申請專利範圍第2項所述的承載盤，其中該內圈包含複數朝向外圈延伸的第一延伸部。
  4. 如申請專利範圍第3項所述的承載盤，其中各第二延伸部分別對齊其中一第一延伸部。
  5. 如申請專利範圍第3項所述的承載盤，其中該等子元件中其中一子元件具有一最大寬度，且該子元件之第二延伸部具有該最大寬度，其中該內圈具有一最大寬度，該等第一延伸部中其中一第一延伸部具有該內圈的最大寬度，具有該內圈的最大寬度的該第一延伸部對齊該具有該子元件之該最大寬度的該第二延伸部。
  6. 如申請專利範圍第1項所述的承載盤，其中該本體為一具有一徑向寬度的環形圈，其中該等子元件中其中一子元件具有一小於該徑向寬度的最大寬度。
  7. 如申請專利範圍第1項所述的承載盤，其中各承載舟包含一頂面以及一環繞該頂面且具有一高度的邊緣，該本體包含一支撐該外圈以及該內圈的上表面，該等子元件中其中一子元件包含一厚度，該厚度不大於該邊緣的高度。
  8. 如申請專利範圍第1項所述的承載盤，其中該外圈與每一承載舟的部分相鄰。
  9. 如申請專利範圍第1項所述的承載盤，其中該本體還包含一第一定位結構以及一上表面，該第一定位結構形成於該上表面上且對應於該多個子元件的位置。
  10. 如申請專利範圍第9項所述的承載盤，其中該等子元件之一包含一面對該本體的該上表面的第一表面、一相對於該第一表面的第二表面以及一形成於該第一表面上且與該第一定位結構結合的第二定位結構，該第二定位結構包含複數凹槽，該等凹槽內凹成形於該第一表面，該等凹槽各具有一深度，其小於該第一表面至該第二表面之間的距離。
TW103135936A 2014-06-02 2014-10-16 承載盤 TWI659496B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/293,539 US9396983B2 (en) 2014-06-02 2014-06-02 Susceptor
US14/293,539 2014-06-02

Publications (2)

Publication Number Publication Date
TW201546945A TW201546945A (zh) 2015-12-16
TWI659496B true TWI659496B (zh) 2019-05-11

Family

ID=54702633

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103135936A TWI659496B (zh) 2014-06-02 2014-10-16 承載盤

Country Status (3)

Country Link
US (1) US9396983B2 (zh)
CN (1) CN105280534B (zh)
TW (1) TWI659496B (zh)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9738974B2 (en) * 2014-06-02 2017-08-22 Epistar Corporation Susceptor
US9396983B2 (en) * 2014-06-02 2016-07-19 Epistar Corporation Susceptor
NL2016318B1 (en) * 2016-02-25 2017-09-11 Xycarb Ceram B V A substrate carrier assembly, a substrate carrier as well as a shielding segment for use in such substrate carrier assembly.
KR101856875B1 (ko) * 2016-12-06 2018-05-10 에스케이실트론 주식회사 웨이퍼 캐리어 두께 측정장치
CN112563164B (zh) * 2020-11-25 2022-07-12 鑫天虹(厦门)科技有限公司 晶片预清洁机台
CN114807904A (zh) * 2022-04-27 2022-07-29 无锡先为科技有限公司 Cvd反应器及其应用的导流组件

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4877573A (en) * 1985-12-19 1989-10-31 Litton Systems, Inc. Substrate holder for wafers during MBE growth
US5782979A (en) * 1993-04-22 1998-07-21 Mitsubishi Denki Kabushiki Kaisha Substrate holder for MOCVD
TW574411B (en) * 2000-09-01 2004-02-01 Aixtron Ag Device for depositing a coating, particularly a crystal coating, on one or more crystal substrate
TW200627522A (en) * 2004-11-16 2006-08-01 Sumitomo Electric Industries Wafer guide, MOCVD equipment, and nitride semiconductor growth method
TW201133680A (en) * 2009-12-30 2011-10-01 Top Eng Co Ltd Integrated wafer tray
JP2012209394A (ja) * 2011-03-29 2012-10-25 Tokyo Electron Ltd 成膜装置及び成膜方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4567938A (en) * 1984-05-02 1986-02-04 Varian Associates, Inc. Method and apparatus for controlling thermal transfer in a cyclic vacuum processing system
US4527620A (en) * 1984-05-02 1985-07-09 Varian Associates, Inc. Apparatus for controlling thermal transfer in a cyclic vacuum processing system
JPS6411342A (en) * 1987-07-06 1989-01-13 Nec Corp Holding of semiconductor substrate
FR2633452B1 (fr) * 1988-06-28 1990-11-02 Doue Julien Dispositif de support pour un substrat mince, notamment en un materiau semiconducteur
EP0948806A2 (en) * 1997-10-03 1999-10-13 Koninklijke Philips Electronics N.V. Holder for a semiconductor substrate, and method of manufacturing a semiconductor device using such a holder
JP2000094307A (ja) * 1998-09-18 2000-04-04 Ebara Corp ポリッシング装置
US6299153B1 (en) * 1999-07-26 2001-10-09 Discreet Industries Corporation Wafer latch with a ball bearing assembly
KR101150698B1 (ko) * 2009-10-16 2012-06-08 주성엔지니어링(주) 기판안치수단과 이를 포함하는 기판처리장치 및 기판처리모듈
CN102154690B (zh) * 2011-05-23 2012-05-30 东莞市天域半导体科技有限公司 行星式外延生长设备中托盘的构成方法和装置
CN202576645U (zh) * 2012-04-24 2012-12-05 浙江金瑞泓科技股份有限公司 一种石墨基座
US9396983B2 (en) * 2014-06-02 2016-07-19 Epistar Corporation Susceptor

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4877573A (en) * 1985-12-19 1989-10-31 Litton Systems, Inc. Substrate holder for wafers during MBE growth
US5782979A (en) * 1993-04-22 1998-07-21 Mitsubishi Denki Kabushiki Kaisha Substrate holder for MOCVD
TW574411B (en) * 2000-09-01 2004-02-01 Aixtron Ag Device for depositing a coating, particularly a crystal coating, on one or more crystal substrate
TW200627522A (en) * 2004-11-16 2006-08-01 Sumitomo Electric Industries Wafer guide, MOCVD equipment, and nitride semiconductor growth method
TW201133680A (en) * 2009-12-30 2011-10-01 Top Eng Co Ltd Integrated wafer tray
JP2012209394A (ja) * 2011-03-29 2012-10-25 Tokyo Electron Ltd 成膜装置及び成膜方法

Also Published As

Publication number Publication date
TW201546945A (zh) 2015-12-16
US20150348822A1 (en) 2015-12-03
CN105280534B (zh) 2020-04-24
US9396983B2 (en) 2016-07-19
CN105280534A (zh) 2016-01-27

Similar Documents

Publication Publication Date Title
TWI659496B (zh) 承載盤
JP6619874B2 (ja) 多結晶ＳｉＣ基板およびその製造方法
US9487862B2 (en) Semiconductor growing apparatus
TWI541928B (zh) 晶圓載具
TWI557842B (zh) 晶圓載具
US11486037B2 (en) Synthesis of thick single crystal diamond material via chemical vapour deposition
TWM531055U (zh) 具有３５個容置區的排列組態之晶圓載具
KR20100102131A (ko) 에피텍셜 성장용 서셉터
FR3103962B1 (fr) Procede de fabrication d’une structure composite comprenant une couche mince en sic monocristallin sur un substrat support en sic cristallin
KR20190137736A (ko) SiC 증착층을 포함하는 반도체 제조용 부품 및 그 제조방법
TW201812122A (zh) 用於保持半導體晶圓的基座、用於在半導體晶圓的正面上沉積磊晶層的方法、以及具有磊晶層的半導體晶圓
US20170314127A1 (en) Susceptor
JP7217608B2 (ja) ＳｉＣ基板、ＳｉＣエピタキシャルウェハ及びその製造方法
EP3863043A1 (en) Susceptor
US20150259827A1 (en) Susceptor
JP2013004593A (ja) 基板支持装置及び気相成長装置
EP2824698B1 (en) Susceptor
JP6157381B2 (ja) エピタキシャルウェーハの製造方法及びエピタキシャルウェーハ
WO2020066544A1 (ja) エピタキシャルウェーハの製造方法、エピタキシャル成長用シリコン系基板及びエピタキシャルウェーハ
KR20150098432A (ko) 웨이퍼 캐리어
KR20130035616A (ko) 서셉터 및 이를 구비하는 화학기상증착 장치
US9745667B2 (en) Method of fabricating wafer
JP2017098441A (ja) サセプタ
KR101474373B1 (ko) 반도체 기판 및 그 제조 방법
JP2010006700A (ja) 薄型サファイヤ基板