TWI659493B - 基板處理裝置、基板處理系統以及基板處理方法 - Google Patents
基板處理裝置、基板處理系統以及基板處理方法 Download PDFInfo
- Publication number
- TWI659493B TWI659493B TW106140967A TW106140967A TWI659493B TW I659493 B TWI659493 B TW I659493B TW 106140967 A TW106140967 A TW 106140967A TW 106140967 A TW106140967 A TW 106140967A TW I659493 B TWI659493 B TW I659493B
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- electrode
- substrate processing
- holding means
- processing apparatus
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 472
- 238000012545 processing Methods 0.000 title claims abstract description 144
- 238000003672 processing method Methods 0.000 title claims description 9
- 230000005684 electric field Effects 0.000 claims abstract description 22
- 230000005686 electrostatic field Effects 0.000 claims abstract description 17
- 239000007789 gas Substances 0.000 claims description 44
- 238000003860 storage Methods 0.000 claims description 14
- 239000011261 inert gas Substances 0.000 claims description 9
- 229910000838 Al alloy Inorganic materials 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 239000010935 stainless steel Substances 0.000 claims description 6
- 229910001220 stainless steel Inorganic materials 0.000 claims description 6
- 229910045601 alloy Inorganic materials 0.000 claims description 5
- 239000000956 alloy Substances 0.000 claims description 5
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 14
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- 238000003379 elimination reaction Methods 0.000 abstract description 9
- 230000007246 mechanism Effects 0.000 description 20
- 238000012546 transfer Methods 0.000 description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 18
- 239000001301 oxygen Substances 0.000 description 18
- 229910052760 oxygen Inorganic materials 0.000 description 18
- 230000002093 peripheral effect Effects 0.000 description 18
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 15
- 238000010586 diagram Methods 0.000 description 14
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 12
- 239000007788 liquid Substances 0.000 description 12
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 9
- 238000005192 partition Methods 0.000 description 9
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 230000006870 function Effects 0.000 description 5
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 3
- 239000005751 Copper oxide Substances 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 229910000431 copper oxide Inorganic materials 0.000 description 3
- 239000012530 fluid Substances 0.000 description 3
- -1 oxygen ions Chemical class 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000008030 elimination Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000005283 ground state Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 241000270295 Serpentes Species 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 150000002366 halogen compounds Chemical class 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Drying Of Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017015370A JP6778624B2 (ja) | 2017-01-31 | 2017-01-31 | 基板処理装置、基板処理システムおよび基板処理方法 |
| JP2017-015370 | 2017-01-31 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201830564A TW201830564A (zh) | 2018-08-16 |
| TWI659493B true TWI659493B (zh) | 2019-05-11 |
Family
ID=63039453
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW106140967A TWI659493B (zh) | 2017-01-31 | 2017-11-24 | 基板處理裝置、基板處理系統以及基板處理方法 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP6778624B2 (ja) |
| TW (1) | TWI659493B (ja) |
| WO (1) | WO2018142715A1 (ja) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102311213B1 (ko) * | 2019-04-19 | 2021-10-13 | 세메스 주식회사 | 기판 처리 장치 및 기판 처리 방법 |
| JP2022051028A (ja) * | 2020-09-18 | 2022-03-31 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理装置および基板処理方法 |
| KR20220169010A (ko) * | 2021-06-17 | 2022-12-27 | 세메스 주식회사 | 기판 처리 장치 및 기판 처리 방법 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0722530A (ja) * | 1993-02-12 | 1995-01-24 | Semiconductor Res Found | 静電気除去方法及びその装置 |
| JPH10189544A (ja) * | 1996-12-26 | 1998-07-21 | Matsushita Electric Ind Co Ltd | 基板帯電除去装置及び方法 |
| US20060289755A1 (en) * | 2005-05-31 | 2006-12-28 | Hikaru Koyama | Electron microscope application apparatus and sample inspection method |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6244995A (ja) * | 1985-08-23 | 1987-02-26 | 日立マイクロコンピユ−タエンジニアリング株式会社 | 静電気除去装置 |
| JP4248382B2 (ja) * | 2003-12-04 | 2009-04-02 | 株式会社日立ハイテクノロジーズ | 荷電粒子ビームによる検査方法および検査装置 |
| JP4691691B2 (ja) * | 2005-01-13 | 2011-06-01 | 独立行政法人産業技術総合研究所 | 微細電極イオン発生素子を有する除電装置 |
| JP5317852B2 (ja) * | 2009-06-29 | 2013-10-16 | 株式会社クォークテクノロジー | 紫外線照射装置 |
| JP5228080B2 (ja) * | 2011-05-11 | 2013-07-03 | 株式会社日立ハイテクノロジーズ | パターン欠陥検査方法および装置 |
| JPWO2015037534A1 (ja) * | 2013-09-10 | 2017-03-02 | コニカミノルタ株式会社 | 機能性フィルムの製造装置及び製造方法 |
| JP2015070167A (ja) * | 2013-09-30 | 2015-04-13 | 株式会社Ｇｓユアサ | 光照射装置 |
-
2017
- 2017-01-31 JP JP2017015370A patent/JP6778624B2/ja active Active
- 2017-11-14 WO PCT/JP2017/040927 patent/WO2018142715A1/ja active Application Filing
- 2017-11-24 TW TW106140967A patent/TWI659493B/zh active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0722530A (ja) * | 1993-02-12 | 1995-01-24 | Semiconductor Res Found | 静電気除去方法及びその装置 |
| JPH10189544A (ja) * | 1996-12-26 | 1998-07-21 | Matsushita Electric Ind Co Ltd | 基板帯電除去装置及び方法 |
| US20060289755A1 (en) * | 2005-05-31 | 2006-12-28 | Hikaru Koyama | Electron microscope application apparatus and sample inspection method |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201830564A (zh) | 2018-08-16 |
| JP2018125373A (ja) | 2018-08-09 |
| JP6778624B2 (ja) | 2020-11-04 |
| WO2018142715A1 (ja) | 2018-08-09 |
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