TWI655775B - 半導體裝置以及該半導體裝置的製造方法 - Google Patents
半導體裝置以及該半導體裝置的製造方法 Download PDFInfo
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- TWI655775B TWI655775B TW103113677A TW103113677A TWI655775B TW I655775 B TWI655775 B TW I655775B TW 103113677 A TW103113677 A TW 103113677A TW 103113677 A TW103113677 A TW 103113677A TW I655775 B TWI655775 B TW I655775B
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- Prior art keywords
- film
- insulating film
- oxide semiconductor
- semiconductor film
- oxygen
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- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 150000003608 titanium Chemical class 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 238000013022 venting Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
- H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
- H10D30/6739—Conductor-insulator-semiconductor electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6758—Thin-film transistors [TFT] characterised by the insulating substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
- H10D62/126—Top-view geometrical layouts of the regions or the junctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Thin Film Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Formation Of Insulating Films (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013-094550 | 2013-04-26 | ||
| JP2013094550 | 2013-04-26 |
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| TW201448228A TW201448228A (zh) | 2014-12-16 |
| TWI655775B true TWI655775B (zh) | 2019-04-01 |
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| TW103113677A TWI655775B (zh) | 2013-04-26 | 2014-04-15 | 半導體裝置以及該半導體裝置的製造方法 |
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| US (2) | US9450102B2 (enExample) |
| JP (1) | JP6401483B2 (enExample) |
| KR (1) | KR102229728B1 (enExample) |
| TW (1) | TWI655775B (enExample) |
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| TWI555205B (zh) * | 2010-11-05 | 2016-10-21 | 半導體能源研究所股份有限公司 | 半導體裝置及半導體裝置的製造方法 |
| US9853053B2 (en) | 2012-09-10 | 2017-12-26 | 3B Technologies, Inc. | Three dimension integrated circuits employing thin film transistors |
| TWI721409B (zh) | 2013-12-19 | 2021-03-11 | 日商半導體能源研究所股份有限公司 | 半導體裝置 |
| TWI663726B (zh) | 2014-05-30 | 2019-06-21 | Semiconductor Energy Laboratory Co., Ltd. | 半導體裝置、模組及電子裝置 |
| US10032888B2 (en) | 2014-08-22 | 2018-07-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, method for manufacturing semiconductor device, and electronic appliance having semiconductor device |
| US9722091B2 (en) | 2014-09-12 | 2017-08-01 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| WO2016092427A1 (en) * | 2014-12-10 | 2016-06-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| CN107112049A (zh) | 2014-12-23 | 2017-08-29 | 3B技术公司 | 采用薄膜晶体管的三维集成电路 |
| US9653613B2 (en) * | 2015-02-27 | 2017-05-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US10008609B2 (en) * | 2015-03-17 | 2018-06-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, method for manufacturing the same, or display device including the same |
| KR102582523B1 (ko) * | 2015-03-19 | 2023-09-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 전자 기기 |
| KR20160114511A (ko) | 2015-03-24 | 2016-10-05 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치의 제작 방법 |
| US9806200B2 (en) | 2015-03-27 | 2017-10-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US10056497B2 (en) * | 2015-04-15 | 2018-08-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US10714633B2 (en) | 2015-12-15 | 2020-07-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and display device |
| KR20180123028A (ko) | 2016-03-11 | 2018-11-14 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장비, 상기 반도체 장치의 제작 방법, 및 상기 반도체 장치를 포함하는 표시 장치 |
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| TW201813095A (zh) * | 2016-07-11 | 2018-04-01 | 半導體能源硏究所股份有限公司 | 半導體裝置 |
| US10411003B2 (en) | 2016-10-14 | 2019-09-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| KR102384624B1 (ko) * | 2016-10-21 | 2022-04-11 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| US9954166B1 (en) * | 2016-11-28 | 2018-04-24 | Taiwan Semiconductor Manufacturing Co., Ltd. | Embedded memory device with a composite top electrode |
| US20220059704A1 (en) * | 2020-08-21 | 2022-02-24 | Intel Corporation | Transistor cap-channel arrangements |
| JP7640838B2 (ja) * | 2021-03-23 | 2025-03-06 | 日新電機株式会社 | シリコン酸窒化膜の成膜方法及び薄膜トランジスタの製造方法 |
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| US20130020569A1 (en) * | 2011-07-22 | 2013-01-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
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| JP6401483B2 (ja) | 2018-10-10 |
| US9755083B2 (en) | 2017-09-05 |
| US9450102B2 (en) | 2016-09-20 |
| KR102229728B1 (ko) | 2021-03-22 |
| US20160365454A1 (en) | 2016-12-15 |
| KR20140128243A (ko) | 2014-11-05 |
| JP2014225651A (ja) | 2014-12-04 |
| TW201448228A (zh) | 2014-12-16 |
| US20140319514A1 (en) | 2014-10-30 |
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