TWI653350B - 用於有機材料之蒸發源及蒸發源陣列 - Google Patents
用於有機材料之蒸發源及蒸發源陣列 Download PDFInfo
- Publication number
- TWI653350B TWI653350B TW104108946A TW104108946A TWI653350B TW I653350 B TWI653350 B TW I653350B TW 104108946 A TW104108946 A TW 104108946A TW 104108946 A TW104108946 A TW 104108946A TW I653350 B TWI653350 B TW I653350B
- Authority
- TW
- Taiwan
- Prior art keywords
- evaporation source
- evaporation
- substrate
- distribution
- distribution pipe
- Prior art date
Links
- 238000001704 evaporation Methods 0.000 title claims abstract description 254
- 230000008020 evaporation Effects 0.000 title claims abstract description 253
- 239000011368 organic material Substances 0.000 title claims abstract description 85
- 238000009826 distribution Methods 0.000 claims abstract description 206
- 239000012530 fluid Substances 0.000 claims abstract description 9
- 238000004891 communication Methods 0.000 claims abstract description 8
- 238000010438 heat treatment Methods 0.000 claims description 46
- 238000001816 cooling Methods 0.000 claims description 26
- 239000000758 substrate Substances 0.000 description 227
- 238000000151 deposition Methods 0.000 description 118
- 230000008021 deposition Effects 0.000 description 111
- 238000004519 manufacturing process Methods 0.000 description 61
- 238000012546 transfer Methods 0.000 description 51
- 239000000463 material Substances 0.000 description 44
- 239000010410 layer Substances 0.000 description 41
- 238000004140 cleaning Methods 0.000 description 28
- 230000032258 transport Effects 0.000 description 19
- 238000012545 processing Methods 0.000 description 16
- 239000011521 glass Substances 0.000 description 15
- 238000012423 maintenance Methods 0.000 description 14
- 239000002184 metal Substances 0.000 description 14
- 229910052751 metal Inorganic materials 0.000 description 14
- 238000000034 method Methods 0.000 description 12
- 230000005855 radiation Effects 0.000 description 11
- 239000011796 hollow space material Substances 0.000 description 10
- 238000007689 inspection Methods 0.000 description 10
- 239000010409 thin film Substances 0.000 description 10
- 239000011248 coating agent Substances 0.000 description 8
- 238000000576 coating method Methods 0.000 description 8
- 238000002156 mixing Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 238000005538 encapsulation Methods 0.000 description 7
- 238000005192 partition Methods 0.000 description 6
- 239000007921 spray Substances 0.000 description 6
- 239000007789 gas Substances 0.000 description 5
- 230000006872 improvement Effects 0.000 description 5
- 238000004806 packaging method and process Methods 0.000 description 5
- -1 ferrous metals Chemical class 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 230000000873 masking effect Effects 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 239000003570 air Substances 0.000 description 3
- 238000003491 array Methods 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 3
- 239000012809 cooling fluid Substances 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 230000009977 dual effect Effects 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229920000049 Carbon (fiber) Polymers 0.000 description 2
- 239000012080 ambient air Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000005388 borosilicate glass Substances 0.000 description 2
- 239000004917 carbon fiber Substances 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000009833 condensation Methods 0.000 description 2
- 230000005494 condensation Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000005265 energy consumption Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 230000005525 hole transport Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 239000012044 organic layer Substances 0.000 description 2
- 238000002203 pretreatment Methods 0.000 description 2
- 239000005361 soda-lime glass Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 238000010549 co-Evaporation Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000006059 cover glass Substances 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000010943 off-gassing Methods 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000007781 pre-processing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000009461 vacuum packaging Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/12—Organic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/243—Crucibles for source material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/26—Vacuum evaporation by resistance or inductive heating of the source
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/191—Deposition of organic active material characterised by provisions for the orientation or alignment of the layer to be deposited
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Physical Vapour Deposition (AREA)
- Electroluminescent Light Sources (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| ??PCT/EP2014/055741 | 2014-03-21 | ||
| PCT/EP2014/055741 WO2015139776A1 (en) | 2014-03-21 | 2014-03-21 | Evaporation source for organic material |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201602373A TW201602373A (zh) | 2016-01-16 |
| TWI653350B true TWI653350B (zh) | 2019-03-11 |
Family
ID=50382442
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW104108946A TWI653350B (zh) | 2014-03-21 | 2015-03-20 | 用於有機材料之蒸發源及蒸發源陣列 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20170092899A1 (enExample) |
| EP (1) | EP3119919A1 (enExample) |
| JP (1) | JP6466469B2 (enExample) |
| KR (1) | KR101983213B1 (enExample) |
| CN (1) | CN106133183B (enExample) |
| TW (1) | TWI653350B (enExample) |
| WO (1) | WO2015139776A1 (enExample) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6937549B2 (ja) * | 2016-06-10 | 2021-09-22 | 株式会社ジャパンディスプレイ | 発光素子の製造装置 |
| KR102188702B1 (ko) * | 2016-12-14 | 2020-12-08 | 어플라이드 머티어리얼스, 인코포레이티드 | 증착 시스템 |
| CN108456855B (zh) * | 2017-02-17 | 2024-09-03 | 京东方科技集团股份有限公司 | 坩埚、蒸镀准备装置、蒸镀设备及蒸镀方法 |
| CN106637091B (zh) * | 2017-02-24 | 2019-08-30 | 旭科新能源股份有限公司 | 用于薄膜太阳能电池制造的高温蒸发炉 |
| CN109154063A (zh) * | 2017-04-28 | 2019-01-04 | 应用材料公司 | 真空系统和用于在基板上沉积多个材料的方法 |
| CN106987809A (zh) * | 2017-05-17 | 2017-07-28 | 大连交通大学 | 一种有机真空蒸发源 |
| CN107299322A (zh) * | 2017-08-07 | 2017-10-27 | 旭科新能源股份有限公司 | 一种立式低温蒸发束源炉 |
| CN111344433A (zh) * | 2017-11-16 | 2020-06-26 | 应用材料公司 | 冷却沉积源的方法、用于冷却沉积源的腔室和沉积系统 |
| CN111902563A (zh) * | 2018-03-28 | 2020-11-06 | 应用材料公司 | 真空处理设备以及用于处理基板的方法 |
| CN110691861A (zh) * | 2018-05-04 | 2020-01-14 | 应用材料公司 | 用于沉积蒸发材料的蒸发源、真空沉积系统和用于沉积蒸发材料的方法 |
| TWI719388B (zh) * | 2019-01-16 | 2021-02-21 | 臺灣永光化學工業股份有限公司 | 負型感光性樹脂組成物及其用途 |
| CN109817842B (zh) * | 2019-01-16 | 2021-10-01 | 京东方科技集团股份有限公司 | 一种真空干燥装置、显示用基板的制备方法 |
| KR102709259B1 (ko) * | 2019-07-25 | 2024-09-23 | 어플라이드 머티어리얼스, 인코포레이티드 | 수직 배향으로 oled 층 스택을 증발시키기 위한 시스템 및 방법 |
| JP7409799B2 (ja) * | 2019-07-29 | 2024-01-09 | キヤノントッキ株式会社 | ノズルユニット，坩堝，蒸発源及び蒸着装置 |
| US11732345B2 (en) * | 2020-06-04 | 2023-08-22 | Applied Materials, Inc. | Vapor deposition apparatus and method for coating a substrate in a vacuum chamber |
| CN111945116A (zh) * | 2020-08-14 | 2020-11-17 | 云谷（固安）科技有限公司 | 一种蒸镀设备和蒸镀方法 |
| WO2025088368A1 (en) * | 2023-10-27 | 2025-05-01 | Applied Materials, Inc. | Method of coating a substrate and evaporation source arrangement |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5904958A (en) * | 1998-03-20 | 1999-05-18 | Rexam Industries Corp. | Adjustable nozzle for evaporation or organic monomers |
| EP1505167B1 (en) * | 2003-08-04 | 2014-09-17 | LG Display Co., Ltd. | Evaporation source |
| KR20090130559A (ko) * | 2008-06-16 | 2009-12-24 | 삼성모바일디스플레이주식회사 | 이송 장치 및 이를 구비하는 유기물 증착 장치 |
| EP2204467B1 (en) * | 2008-12-23 | 2014-05-07 | Applied Materials, Inc. | Method and apparatus for depositing mixed layers |
| DE102010041376A1 (de) * | 2009-09-25 | 2011-04-07 | Von Ardenne Anlagentechnik Gmbh | Verdampfereinrichtung für eine Beschichtungsanlage und Verfahren zur Koverdampfung von mindestens zwei Substanzen |
| KR101708420B1 (ko) * | 2010-09-15 | 2017-02-21 | 삼성디스플레이 주식회사 | 기판 증착 시스템 및 이를 이용한 증착 방법 |
| KR101288307B1 (ko) * | 2011-05-31 | 2013-07-22 | 주성엔지니어링(주) | 증발 증착 장치 및 증발 증착 방법 |
| KR20130068926A (ko) * | 2011-12-16 | 2013-06-26 | 주식회사 원익아이피에스 | 증발원 및 이를 구비한 진공 증착 장치 |
| JP2013211137A (ja) * | 2012-03-30 | 2013-10-10 | Samsung Display Co Ltd | 真空蒸着方法及びその装置 |
-
2014
- 2014-03-21 WO PCT/EP2014/055741 patent/WO2015139776A1/en not_active Ceased
- 2014-03-21 KR KR1020167029505A patent/KR101983213B1/ko active Active
- 2014-03-21 EP EP14712647.8A patent/EP3119919A1/en not_active Withdrawn
- 2014-03-21 US US15/126,565 patent/US20170092899A1/en not_active Abandoned
- 2014-03-21 JP JP2016558011A patent/JP6466469B2/ja active Active
- 2014-03-21 CN CN201480077377.5A patent/CN106133183B/zh active Active
-
2015
- 2015-03-20 TW TW104108946A patent/TWI653350B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| US20170092899A1 (en) | 2017-03-30 |
| CN106133183A (zh) | 2016-11-16 |
| KR101983213B1 (ko) | 2019-05-28 |
| JP6466469B2 (ja) | 2019-02-06 |
| JP2017509796A (ja) | 2017-04-06 |
| KR20160135353A (ko) | 2016-11-25 |
| TW201602373A (zh) | 2016-01-16 |
| WO2015139776A1 (en) | 2015-09-24 |
| EP3119919A1 (en) | 2017-01-25 |
| CN106133183B (zh) | 2020-03-03 |
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