TWI644182B - 曝光裝置、曝光方法、及元件製造方法 - Google Patents
曝光裝置、曝光方法、及元件製造方法 Download PDFInfo
- Publication number
- TWI644182B TWI644182B TW106117608A TW106117608A TWI644182B TW I644182 B TWI644182 B TW I644182B TW 106117608 A TW106117608 A TW 106117608A TW 106117608 A TW106117608 A TW 106117608A TW I644182 B TWI644182 B TW I644182B
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- Taiwan
- Prior art keywords
- liquid
- substrate
- space
- exposure
- gap
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 64
- 238000004519 manufacturing process Methods 0.000 title claims description 22
- 239000007788 liquid Substances 0.000 claims abstract description 1018
- 239000000758 substrate Substances 0.000 claims abstract description 505
- 230000003287 optical effect Effects 0.000 claims abstract description 430
- 238000011084 recovery Methods 0.000 claims abstract description 313
- 238000002347 injection Methods 0.000 claims description 10
- 239000007924 injection Substances 0.000 claims description 10
- 239000011800 void material Substances 0.000 abstract description 115
- 238000007654 immersion Methods 0.000 description 296
- 239000003570 air Substances 0.000 description 56
- 230000007246 mechanism Effects 0.000 description 43
- 238000010586 diagram Methods 0.000 description 38
- 239000010408 film Substances 0.000 description 38
- 239000005871 repellent Substances 0.000 description 38
- 230000005855 radiation Effects 0.000 description 28
- 239000012535 impurity Substances 0.000 description 24
- 238000012545 processing Methods 0.000 description 23
- 230000009471 action Effects 0.000 description 19
- 230000002940 repellent Effects 0.000 description 19
- 238000005286 illumination Methods 0.000 description 17
- 239000000463 material Substances 0.000 description 17
- 230000007613 environmental effect Effects 0.000 description 15
- 238000004064 recycling Methods 0.000 description 14
- 230000002093 peripheral effect Effects 0.000 description 13
- 239000004696 Poly ether ether ketone Substances 0.000 description 12
- 229920002530 polyetherether ketone Polymers 0.000 description 12
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 12
- 239000004810 polytetrafluoroethylene Substances 0.000 description 12
- -1 for example Substances 0.000 description 9
- 238000011109 contamination Methods 0.000 description 8
- 229940058401 polytetrafluoroethylene Drugs 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
- 230000002265 prevention Effects 0.000 description 7
- 238000003860 storage Methods 0.000 description 7
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 6
- 230000007547 defect Effects 0.000 description 6
- 238000012986 modification Methods 0.000 description 6
- 230000004048 modification Effects 0.000 description 6
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 5
- 230000002950 deficient Effects 0.000 description 5
- 239000011737 fluorine Substances 0.000 description 5
- 229910052731 fluorine Inorganic materials 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 238000009834 vaporization Methods 0.000 description 5
- 230000008016 vaporization Effects 0.000 description 5
- 239000004809 Teflon Substances 0.000 description 4
- 229920006362 Teflon® Polymers 0.000 description 4
- JUPQTSLXMOCDHR-UHFFFAOYSA-N benzene-1,4-diol;bis(4-fluorophenyl)methanone Chemical compound OC1=CC=C(O)C=C1.C1=CC(F)=CC=C1C(=O)C1=CC=C(F)C=C1 JUPQTSLXMOCDHR-UHFFFAOYSA-N 0.000 description 4
- 229920001577 copolymer Polymers 0.000 description 4
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 230000005499 meniscus Effects 0.000 description 4
- 239000011148 porous material Substances 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 239000012530 fluid Substances 0.000 description 3
- 229910052742 iron Inorganic materials 0.000 description 3
- 230000001174 ascending effect Effects 0.000 description 2
- 230000003749 cleanliness Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000003921 oil Substances 0.000 description 2
- 230000000452 restraining effect Effects 0.000 description 2
- 230000001360 synchronised effect Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 238000000018 DNA microarray Methods 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000012080 ambient air Substances 0.000 description 1
- 230000000703 anti-shock Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000011344 liquid material Substances 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Health & Medical Sciences (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (10)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US19383408P | 2008-12-29 | 2008-12-29 | |
| US19383608P | 2008-12-29 | 2008-12-29 | |
| US19383308P | 2008-12-29 | 2008-12-29 | |
| US19383508P | 2008-12-29 | 2008-12-29 | |
| US61/193,833 | 2008-12-29 | ||
| US61/193,835 | 2008-12-29 | ||
| US61/193,834 | 2008-12-29 | ||
| US61/193,836 | 2008-12-29 | ||
| US12/644,703 | 2009-12-22 | ||
| US12/644,703 US8896806B2 (en) | 2008-12-29 | 2009-12-22 | Exposure apparatus, exposure method, and device manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201732458A TW201732458A (zh) | 2017-09-16 |
| TWI644182B true TWI644182B (zh) | 2018-12-11 |
Family
ID=42061940
Family Applications (4)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW106117608A TWI644182B (zh) | 2008-12-29 | 2009-12-28 | 曝光裝置、曝光方法、及元件製造方法 |
| TW098145223A TWI479276B (zh) | 2008-12-29 | 2009-12-28 | 曝光裝置、曝光方法、及元件製造方法 |
| TW103145928A TWI598698B (zh) | 2008-12-29 | 2009-12-28 | 曝光裝置、曝光方法、及元件製造方法 |
| TW107138629A TWI709002B (zh) | 2008-12-29 | 2009-12-28 | 曝光裝置及元件製造方法 |
Family Applications After (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW098145223A TWI479276B (zh) | 2008-12-29 | 2009-12-28 | 曝光裝置、曝光方法、及元件製造方法 |
| TW103145928A TWI598698B (zh) | 2008-12-29 | 2009-12-28 | 曝光裝置、曝光方法、及元件製造方法 |
| TW107138629A TWI709002B (zh) | 2008-12-29 | 2009-12-28 | 曝光裝置及元件製造方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US8896806B2 (https=) |
| JP (2) | JP5408258B2 (https=) |
| KR (2) | KR101831984B1 (https=) |
| TW (4) | TWI644182B (https=) |
| WO (1) | WO2010076894A1 (https=) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4884180B2 (ja) * | 2006-11-21 | 2012-02-29 | 東京エレクトロン株式会社 | 基板処理装置および基板処理方法 |
| US8896806B2 (en) * | 2008-12-29 | 2014-11-25 | Nikon Corporation | Exposure apparatus, exposure method, and device manufacturing method |
| US20110222031A1 (en) * | 2010-03-12 | 2011-09-15 | Nikon Corporation | Liquid immersion member, exposure apparatus, liquid recovering method, device fabricating method, program, and storage medium |
| NL2009271A (en) | 2011-09-15 | 2013-03-18 | Asml Netherlands Bv | A fluid handling structure, a lithographic apparatus and a device manufacturing method. |
| US9268231B2 (en) * | 2012-04-10 | 2016-02-23 | Nikon Corporation | Liquid immersion member, exposure apparatus, exposing method, method for manufacturing device, program, and recording medium |
| US9823580B2 (en) | 2012-07-20 | 2017-11-21 | Nikon Corporation | Liquid immersion member, exposure apparatus, exposing method, method for manufacturing device, program, and recording medium |
| US9568828B2 (en) | 2012-10-12 | 2017-02-14 | Nikon Corporation | Exposure apparatus, exposing method, device manufacturing method, program, and recording medium |
| US9494870B2 (en) * | 2012-10-12 | 2016-11-15 | Nikon Corporation | Exposure apparatus, exposing method, device manufacturing method, program, and recording medium |
| US9720331B2 (en) * | 2012-12-27 | 2017-08-01 | Nikon Corporation | Liquid immersion member, exposure apparatus, exposing method, method of manufacturing device, program, and recording medium |
| US9651873B2 (en) | 2012-12-27 | 2017-05-16 | Nikon Corporation | Liquid immersion member, exposure apparatus, exposing method, method of manufacturing device, program, and recording medium |
| JP6212884B2 (ja) * | 2013-03-15 | 2017-10-18 | 株式会社ニコン | 露光装置、露光方法、及びデバイス製造方法 |
| WO2015052781A1 (ja) * | 2013-10-08 | 2015-04-16 | 株式会社ニコン | 液浸部材、露光装置及び露光方法、並びにデバイス製造方法 |
| KR20170026563A (ko) | 2014-07-01 | 2017-03-08 | 에이에스엠엘 네델란즈 비.브이. | 리소그래피 장치 및 리소그래피 장치를 제조하는 방법 |
| EP3510446B1 (en) | 2016-09-12 | 2022-10-05 | ASML Netherlands B.V. | Fluid handling structure for lithographic apparatus |
| KR102649164B1 (ko) * | 2017-12-15 | 2024-03-20 | 에이에스엠엘 네델란즈 비.브이. | 유체 핸들링 구조체, 리소그래피 장치, 유체 핸들링 구조체를 사용하는 방법 및 리소그래피 장치를 사용하는 방법 |
| JP6610726B2 (ja) * | 2018-07-11 | 2019-11-27 | 株式会社ニコン | 液浸部材、露光装置及び露光方法、並びにデバイス製造方法 |
| CN114402263A (zh) | 2019-09-13 | 2022-04-26 | Asml荷兰有限公司 | 流体处置系统和光刻设备 |
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| WO2005067013A1 (ja) * | 2004-01-05 | 2005-07-21 | Nikon Corporation | 露光装置、露光方法及びデバイス製造方法 |
| WO2005119742A1 (ja) * | 2004-06-04 | 2005-12-15 | Nikon Corporation | 露光装置、露光方法及びデバイス製造方法 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8004A (en) * | 1851-03-25 | Francis b | ||
| EP1944654A3 (en) | 1996-11-28 | 2010-06-02 | Nikon Corporation | An exposure apparatus and an exposure method |
| DE69829614T2 (de) | 1997-03-10 | 2006-03-09 | Asml Netherlands B.V. | Lithographiegerät mit einer positioniervorrichtung mit zwei objekthaltern |
| US6897963B1 (en) | 1997-12-18 | 2005-05-24 | Nikon Corporation | Stage device and exposure apparatus |
| US6208407B1 (en) | 1997-12-22 | 2001-03-27 | Asm Lithography B.V. | Method and apparatus for repetitively projecting a mask pattern on a substrate, using a time-saving height measurement |
| WO1999046835A1 (en) | 1998-03-11 | 1999-09-16 | Nikon Corporation | Ultraviolet laser apparatus and exposure apparatus comprising the ultraviolet laser apparatus |
| WO2001035168A1 (en) | 1999-11-10 | 2001-05-17 | Massachusetts Institute Of Technology | Interference lithography utilizing phase-locked scanning beams |
| US6452292B1 (en) | 2000-06-26 | 2002-09-17 | Nikon Corporation | Planar motor with linear coil arrays |
| KR100815222B1 (ko) | 2001-02-27 | 2008-03-19 | 에이에스엠엘 유에스, 인크. | 리소그래피 장치 및 적어도 하나의 레티클 상에 형성된 적어도 두 개의 패턴으로부터의 이미지로 기판 스테이지 상의 필드를 노출시키는 방법 |
| TW529172B (en) | 2001-07-24 | 2003-04-21 | Asml Netherlands Bv | Imaging apparatus |
| KR20050035890A (ko) | 2002-08-23 | 2005-04-19 | 가부시키가이샤 니콘 | 투영 광학계, 포토리소그래피 방법, 노광 장치 및 그 이용방법 |
| SG135052A1 (en) * | 2002-11-12 | 2007-09-28 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| EP1571697A4 (en) * | 2002-12-10 | 2007-07-04 | Nikon Corp | EXPOSURE SYSTEM AND COMPONENT MANUFACTURING METHOD |
| EP1498778A1 (en) * | 2003-06-27 | 2005-01-19 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| EP2264531B1 (en) | 2003-07-09 | 2013-01-16 | Nikon Corporation | Exposure apparatus and device manufacturing method |
| EP1660925B1 (en) | 2003-09-03 | 2015-04-29 | Nikon Corporation | Apparatus and method for providing fluid for immersion lithography |
| US7411653B2 (en) | 2003-10-28 | 2008-08-12 | Asml Netherlands B.V. | Lithographic apparatus |
| EP2267537B1 (en) | 2003-10-28 | 2017-09-13 | ASML Netherlands BV | Lithographic apparatus |
| US7589822B2 (en) | 2004-02-02 | 2009-09-15 | Nikon Corporation | Stage drive method and stage unit, exposure apparatus, and device manufacturing method |
| EP3093873B1 (en) | 2004-02-04 | 2017-10-11 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing a device |
| JP4677986B2 (ja) | 2004-04-19 | 2011-04-27 | 株式会社ニコン | ノズル部材、露光方法、露光装置及びデバイス製造方法 |
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| JP4543767B2 (ja) | 2004-06-10 | 2010-09-15 | 株式会社ニコン | 露光装置及びデバイス製造方法 |
| US7399614B2 (en) * | 2004-06-30 | 2008-07-15 | Applera Corporation | 5-methylcytosine detection, compositions and methods therefor |
| US7701550B2 (en) | 2004-08-19 | 2010-04-20 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| DE602006012746D1 (de) * | 2005-01-14 | 2010-04-22 | Asml Netherlands Bv | Lithografische Vorrichtung und Herstellungsverfahren |
| US7411654B2 (en) | 2005-04-05 | 2008-08-12 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
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| JP2007184336A (ja) | 2006-01-05 | 2007-07-19 | Canon Inc | 露光装置及びデバイス製造方法 |
| EP1995768A4 (en) | 2006-03-13 | 2013-02-06 | Nikon Corp | EXPOSURE DEVICE, MAINTENANCE METHOD, EXPOSURE METHOD AND DEVICE MANUFACTURING METHOD |
| US9477158B2 (en) | 2006-04-14 | 2016-10-25 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US8634053B2 (en) | 2006-12-07 | 2014-01-21 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
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| US8896806B2 (en) * | 2008-12-29 | 2014-11-25 | Nikon Corporation | Exposure apparatus, exposure method, and device manufacturing method |
-
2009
- 2009-12-22 US US12/644,703 patent/US8896806B2/en active Active
- 2009-12-25 KR KR1020117017645A patent/KR101831984B1/ko active Active
- 2009-12-25 KR KR1020187004838A patent/KR102087015B1/ko active Active
- 2009-12-25 JP JP2011527532A patent/JP5408258B2/ja active Active
- 2009-12-25 WO PCT/JP2009/071914 patent/WO2010076894A1/en not_active Ceased
- 2009-12-28 TW TW106117608A patent/TWI644182B/zh active
- 2009-12-28 TW TW098145223A patent/TWI479276B/zh active
- 2009-12-28 TW TW103145928A patent/TWI598698B/zh active
- 2009-12-28 TW TW107138629A patent/TWI709002B/zh active
-
2013
- 2013-11-06 JP JP2013230683A patent/JP5668825B2/ja active Active
-
2014
- 2014-10-20 US US14/518,395 patent/US9612538B2/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005067013A1 (ja) * | 2004-01-05 | 2005-07-21 | Nikon Corporation | 露光装置、露光方法及びデバイス製造方法 |
| WO2005119742A1 (ja) * | 2004-06-04 | 2005-12-15 | Nikon Corporation | 露光装置、露光方法及びデバイス製造方法 |
| US20070216889A1 (en) * | 2004-06-04 | 2007-09-20 | Yasufumi Nishii | Exposure Apparatus, Exposure Method, and Method for Producing Device |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201518877A (zh) | 2015-05-16 |
| KR102087015B1 (ko) | 2020-03-10 |
| KR20180021907A (ko) | 2018-03-05 |
| JP5668825B2 (ja) | 2015-02-12 |
| TWI709002B (zh) | 2020-11-01 |
| KR20110106908A (ko) | 2011-09-29 |
| TW201732458A (zh) | 2017-09-16 |
| US20150036112A1 (en) | 2015-02-05 |
| JP2012514315A (ja) | 2012-06-21 |
| TW201908875A (zh) | 2019-03-01 |
| TWI598698B (zh) | 2017-09-11 |
| US9612538B2 (en) | 2017-04-04 |
| US20100304310A1 (en) | 2010-12-02 |
| WO2010076894A1 (en) | 2010-07-08 |
| TWI479276B (zh) | 2015-04-01 |
| US8896806B2 (en) | 2014-11-25 |
| JP5408258B2 (ja) | 2014-02-05 |
| TW201030479A (en) | 2010-08-16 |
| KR101831984B1 (ko) | 2018-02-23 |
| JP2014027320A (ja) | 2014-02-06 |
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