KR101831984B1 - 노광 장치, 노광 방법 및 디바이스 제조 방법 - Google Patents

노광 장치, 노광 방법 및 디바이스 제조 방법 Download PDF

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KR101831984B1
KR101831984B1 KR1020117017645A KR20117017645A KR101831984B1 KR 101831984 B1 KR101831984 B1 KR 101831984B1 KR 1020117017645 A KR1020117017645 A KR 1020117017645A KR 20117017645 A KR20117017645 A KR 20117017645A KR 101831984 B1 KR101831984 B1 KR 101831984B1
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liquid
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KR20110106908A (ko
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신지 사토
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가부시키가이샤 니콘
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020117017645A 2008-12-29 2009-12-25 노광 장치, 노광 방법 및 디바이스 제조 방법 Active KR101831984B1 (ko)

Applications Claiming Priority (11)

Application Number Priority Date Filing Date Title
US19383408P 2008-12-29 2008-12-29
US19383608P 2008-12-29 2008-12-29
US19383308P 2008-12-29 2008-12-29
US19383508P 2008-12-29 2008-12-29
US61/193,833 2008-12-29
US61/193,835 2008-12-29
US61/193,834 2008-12-29
US61/193,836 2008-12-29
US12/644,703 2009-12-22
US12/644,703 US8896806B2 (en) 2008-12-29 2009-12-22 Exposure apparatus, exposure method, and device manufacturing method
PCT/JP2009/071914 WO2010076894A1 (en) 2008-12-29 2009-12-25 Exposure apparatus, exposure method, and device manufacturing method

Related Child Applications (1)

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KR1020187004838A Division KR102087015B1 (ko) 2008-12-29 2009-12-25 노광 장치, 노광 방법 및 디바이스 제조 방법

Publications (2)

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KR20110106908A KR20110106908A (ko) 2011-09-29
KR101831984B1 true KR101831984B1 (ko) 2018-02-23

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KR1020117017645A Active KR101831984B1 (ko) 2008-12-29 2009-12-25 노광 장치, 노광 방법 및 디바이스 제조 방법
KR1020187004838A Active KR102087015B1 (ko) 2008-12-29 2009-12-25 노광 장치, 노광 방법 및 디바이스 제조 방법

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Country Link
US (2) US8896806B2 (https=)
JP (2) JP5408258B2 (https=)
KR (2) KR101831984B1 (https=)
TW (4) TWI644182B (https=)
WO (1) WO2010076894A1 (https=)

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US8896806B2 (en) * 2008-12-29 2014-11-25 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
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US9268231B2 (en) * 2012-04-10 2016-02-23 Nikon Corporation Liquid immersion member, exposure apparatus, exposing method, method for manufacturing device, program, and recording medium
US9823580B2 (en) 2012-07-20 2017-11-21 Nikon Corporation Liquid immersion member, exposure apparatus, exposing method, method for manufacturing device, program, and recording medium
US9568828B2 (en) 2012-10-12 2017-02-14 Nikon Corporation Exposure apparatus, exposing method, device manufacturing method, program, and recording medium
US9494870B2 (en) * 2012-10-12 2016-11-15 Nikon Corporation Exposure apparatus, exposing method, device manufacturing method, program, and recording medium
US9720331B2 (en) * 2012-12-27 2017-08-01 Nikon Corporation Liquid immersion member, exposure apparatus, exposing method, method of manufacturing device, program, and recording medium
US9651873B2 (en) 2012-12-27 2017-05-16 Nikon Corporation Liquid immersion member, exposure apparatus, exposing method, method of manufacturing device, program, and recording medium
JP6212884B2 (ja) * 2013-03-15 2017-10-18 株式会社ニコン 露光装置、露光方法、及びデバイス製造方法
WO2015052781A1 (ja) * 2013-10-08 2015-04-16 株式会社ニコン 液浸部材、露光装置及び露光方法、並びにデバイス製造方法
KR20170026563A (ko) 2014-07-01 2017-03-08 에이에스엠엘 네델란즈 비.브이. 리소그래피 장치 및 리소그래피 장치를 제조하는 방법
EP3510446B1 (en) 2016-09-12 2022-10-05 ASML Netherlands B.V. Fluid handling structure for lithographic apparatus
KR102649164B1 (ko) * 2017-12-15 2024-03-20 에이에스엠엘 네델란즈 비.브이. 유체 핸들링 구조체, 리소그래피 장치, 유체 핸들링 구조체를 사용하는 방법 및 리소그래피 장치를 사용하는 방법
JP6610726B2 (ja) * 2018-07-11 2019-11-27 株式会社ニコン 液浸部材、露光装置及び露光方法、並びにデバイス製造方法
CN114402263A (zh) 2019-09-13 2022-04-26 Asml荷兰有限公司 流体处置系统和光刻设备

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Also Published As

Publication number Publication date
TW201518877A (zh) 2015-05-16
KR102087015B1 (ko) 2020-03-10
KR20180021907A (ko) 2018-03-05
JP5668825B2 (ja) 2015-02-12
TWI709002B (zh) 2020-11-01
KR20110106908A (ko) 2011-09-29
TW201732458A (zh) 2017-09-16
US20150036112A1 (en) 2015-02-05
JP2012514315A (ja) 2012-06-21
TW201908875A (zh) 2019-03-01
TWI598698B (zh) 2017-09-11
US9612538B2 (en) 2017-04-04
TWI644182B (zh) 2018-12-11
US20100304310A1 (en) 2010-12-02
WO2010076894A1 (en) 2010-07-08
TWI479276B (zh) 2015-04-01
US8896806B2 (en) 2014-11-25
JP5408258B2 (ja) 2014-02-05
TW201030479A (en) 2010-08-16
JP2014027320A (ja) 2014-02-06

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