TWI643029B - 評價方法、曝光方法、及物品的製造方法 - Google Patents
評價方法、曝光方法、及物品的製造方法 Download PDFInfo
- Publication number
- TWI643029B TWI643029B TW105135975A TW105135975A TWI643029B TW I643029 B TWI643029 B TW I643029B TW 105135975 A TW105135975 A TW 105135975A TW 105135975 A TW105135975 A TW 105135975A TW I643029 B TWI643029 B TW I643029B
- Authority
- TW
- Taiwan
- Prior art keywords
- optical system
- projection optical
- information
- characteristic value
- program
- Prior art date
Links
- 238000011156 evaluation Methods 0.000 title claims abstract description 73
- 238000000034 method Methods 0.000 title claims description 69
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 230000003287 optical effect Effects 0.000 claims abstract description 140
- 239000000758 substrate Substances 0.000 claims abstract description 90
- 230000004075 alteration Effects 0.000 claims abstract description 68
- 238000001514 detection method Methods 0.000 claims abstract description 50
- 238000012546 transfer Methods 0.000 claims abstract description 24
- 230000008859 change Effects 0.000 claims description 7
- 201000009310 astigmatism Diseases 0.000 claims description 4
- 238000011161 development Methods 0.000 claims description 3
- 238000012360 testing method Methods 0.000 description 21
- 238000005259 measurement Methods 0.000 description 18
- 230000008569 process Effects 0.000 description 12
- 238000003384 imaging method Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 238000005286 illumination Methods 0.000 description 5
- 238000009826 distribution Methods 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 238000000576 coating method Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000012935 Averaging Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70591—Testing optical components
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70591—Testing optical components
- G03F7/706—Aberration measurement
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70141—Illumination system adjustment, e.g. adjustments during exposure or alignment during assembly of illumination system
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Lens Barrels (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015-254866 | 2015-12-25 | ||
| JP2015254866A JP6661371B2 (ja) | 2015-12-25 | 2015-12-25 | 評価方法、露光方法、および物品の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201723678A TW201723678A (zh) | 2017-07-01 |
| TWI643029B true TWI643029B (zh) | 2018-12-01 |
Family
ID=59234097
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW105135975A TWI643029B (zh) | 2015-12-25 | 2016-11-04 | 評價方法、曝光方法、及物品的製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP6661371B2 (OSRAM) |
| KR (1) | KR102126232B1 (OSRAM) |
| CN (1) | CN106919004B (OSRAM) |
| TW (1) | TWI643029B (OSRAM) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6978926B2 (ja) * | 2017-12-18 | 2021-12-08 | キヤノン株式会社 | 計測方法、計測装置、露光装置、および物品製造方法 |
| JP7105582B2 (ja) * | 2018-03-09 | 2022-07-25 | キヤノン株式会社 | 決定方法、露光方法、露光装置、物品の製造方法及びプログラム |
| JP7357488B2 (ja) * | 2019-09-04 | 2023-10-06 | キヤノン株式会社 | 露光装置、および物品製造方法 |
| WO2025149231A1 (en) * | 2024-01-11 | 2025-07-17 | Asml Netherlands B.V. | Improvements to lithographic methods and apparatus |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1376238A2 (en) * | 2002-06-21 | 2004-01-02 | Nikon Corporation | A system for correcting aberration and distortion in EUV litography |
| US6778275B2 (en) * | 2002-02-20 | 2004-08-17 | Micron Technology, Inc. | Aberration mark and method for estimating overlay error and optical aberrations |
| EP1580605B1 (en) * | 2004-03-25 | 2007-05-02 | ASML Netherlands B.V. | Method of determining aberration of a projection system of a lithographic apparatus |
| US20120026477A1 (en) * | 2010-07-30 | 2012-02-02 | ASML Neitherlands B.V. | Lithographic Apparatus, Aberration Detector and Device Manufacturing Method |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH068926B2 (ja) * | 1984-08-24 | 1994-02-02 | キヤノン株式会社 | 面位置検出方法 |
| JPH02157844A (ja) * | 1988-12-12 | 1990-06-18 | Nikon Corp | 露光条件測定用マスク並びに該マスクを用いた露光条件測定方法及び装置 |
| JP3013463B2 (ja) * | 1991-02-01 | 2000-02-28 | 株式会社ニコン | 焦点位置検出装置及び投影露光装置 |
| JPH10284414A (ja) * | 1997-04-10 | 1998-10-23 | Nikon Corp | 結像位置検出装置及び半導体デバイスの製造方法 |
| JPH11260703A (ja) * | 1998-03-16 | 1999-09-24 | Sony Corp | 露光装置および露光装置の投影レンズの評価方法 |
| JP4649717B2 (ja) * | 1999-10-01 | 2011-03-16 | 株式会社ニコン | 露光方法及び露光装置、デバイス製造方法 |
| JP2002022609A (ja) * | 2000-07-10 | 2002-01-23 | Canon Inc | 投影露光装置 |
| WO2002050506A1 (en) * | 2000-12-18 | 2002-06-27 | Nikon Corporation | Wavefront measuring apparatus and its usage, method and apparatus for determining focusing characteristics, method and apparatus for correcting focusing characteristics, method for managing focusing characteristics, and method and apparatus for exposure |
| JP2003037052A (ja) * | 2001-07-26 | 2003-02-07 | Canon Inc | 投影光学系の収差測定手段を有する半導体露光装置 |
| JP2003215423A (ja) * | 2002-01-28 | 2003-07-30 | Nikon Corp | 光学系の製造方法，投影光学装置および露光装置 |
| JP3968320B2 (ja) * | 2003-04-18 | 2007-08-29 | トヨタ自動車株式会社 | 車両用赤外線映像装置及びハイビームヘッドランプ構造 |
| JP2004319937A (ja) * | 2003-04-21 | 2004-11-11 | Nikon Corp | 計測方法、光学特性計測方法、露光装置の調整方法及び露光方法、並びにデバイス製造方法 |
| US7158215B2 (en) * | 2003-06-30 | 2007-01-02 | Asml Holding N.V. | Large field of view protection optical system with aberration correctability for flat panel displays |
| CN1312464C (zh) * | 2004-04-29 | 2007-04-25 | 上海微电子装备有限公司 | 成像光学系统像差的现场测量方法 |
| CN101174092B (zh) * | 2006-10-30 | 2010-10-06 | 上海华虹Nec电子有限公司 | 用于监控镜头慧差导致成像畸变的方法及其透镜成像系统 |
| CN101221372A (zh) * | 2008-01-25 | 2008-07-16 | 中国科学院上海光学精密机械研究所 | 光刻机投影物镜偶像差原位检测系统及检测方法 |
| CN101236362B (zh) * | 2008-01-29 | 2010-06-23 | 北京理工大学 | 光刻机投影物镜波像差在线检测方法 |
| CN101464637B (zh) * | 2008-12-30 | 2011-03-30 | 上海微电子装备有限公司 | 光刻机投影物镜波像差测量装置及方法 |
| US8760624B2 (en) * | 2010-07-16 | 2014-06-24 | Rudolph Technologies, Inc. | System and method for estimating field curvature |
| CN102681358B (zh) * | 2012-04-18 | 2014-02-12 | 中国科学院上海光学精密机械研究所 | 基于空间像检测的投影物镜波像差原位测量方法 |
-
2015
- 2015-12-25 JP JP2015254866A patent/JP6661371B2/ja active Active
-
2016
- 2016-11-04 TW TW105135975A patent/TWI643029B/zh active
- 2016-12-16 KR KR1020160172663A patent/KR102126232B1/ko active Active
- 2016-12-20 CN CN201611180236.3A patent/CN106919004B/zh active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6778275B2 (en) * | 2002-02-20 | 2004-08-17 | Micron Technology, Inc. | Aberration mark and method for estimating overlay error and optical aberrations |
| EP1376238A2 (en) * | 2002-06-21 | 2004-01-02 | Nikon Corporation | A system for correcting aberration and distortion in EUV litography |
| EP1580605B1 (en) * | 2004-03-25 | 2007-05-02 | ASML Netherlands B.V. | Method of determining aberration of a projection system of a lithographic apparatus |
| US20120026477A1 (en) * | 2010-07-30 | 2012-02-02 | ASML Neitherlands B.V. | Lithographic Apparatus, Aberration Detector and Device Manufacturing Method |
Also Published As
| Publication number | Publication date |
|---|---|
| JP6661371B2 (ja) | 2020-03-11 |
| KR102126232B1 (ko) | 2020-06-24 |
| TW201723678A (zh) | 2017-07-01 |
| JP2017116867A (ja) | 2017-06-29 |
| CN106919004A (zh) | 2017-07-04 |
| CN106919004B (zh) | 2019-11-26 |
| KR20170077041A (ko) | 2017-07-05 |
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