TWI635613B - 半導體裝置 - Google Patents

半導體裝置 Download PDF

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Publication number
TWI635613B
TWI635613B TW103108158A TW103108158A TWI635613B TW I635613 B TWI635613 B TW I635613B TW 103108158 A TW103108158 A TW 103108158A TW 103108158 A TW103108158 A TW 103108158A TW I635613 B TWI635613 B TW I635613B
Authority
TW
Taiwan
Prior art keywords
oxide semiconductor
semiconductor layer
oxide
layer
insulating layer
Prior art date
Application number
TW103108158A
Other languages
English (en)
Chinese (zh)
Other versions
TW201442243A (zh
Inventor
山崎舜平
Original Assignee
半導體能源研究所股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 半導體能源研究所股份有限公司 filed Critical 半導體能源研究所股份有限公司
Publication of TW201442243A publication Critical patent/TW201442243A/zh
Application granted granted Critical
Publication of TWI635613B publication Critical patent/TWI635613B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6758—Thin-film transistors [TFT] characterised by the insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

Landscapes

  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Semiconductor Integrated Circuits (AREA)
TW103108158A 2013-04-03 2014-03-10 半導體裝置 TWI635613B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013-077615 2013-04-03
JP2013077615 2013-04-03

Publications (2)

Publication Number Publication Date
TW201442243A TW201442243A (zh) 2014-11-01
TWI635613B true TWI635613B (zh) 2018-09-11

Family

ID=51653842

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103108158A TWI635613B (zh) 2013-04-03 2014-03-10 半導體裝置

Country Status (4)

Country Link
US (1) US20140299874A1 (enExample)
JP (1) JP2014212309A (enExample)
KR (1) KR20140120823A (enExample)
TW (1) TWI635613B (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140306219A1 (en) * 2013-04-10 2014-10-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR102244553B1 (ko) 2013-08-23 2021-04-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 용량 소자 및 반도체 장치
JP2015065202A (ja) * 2013-09-24 2015-04-09 株式会社東芝 半導体素子、表示装置、半導体素子の製造方法及び表示装置の製造方法
JP2015179247A (ja) 2013-10-22 2015-10-08 株式会社半導体エネルギー研究所 表示装置
WO2016079639A1 (ja) * 2014-11-20 2016-05-26 株式会社半導体エネルギー研究所 半導体装置、回路基板および電子機器
CN107111985B (zh) 2014-12-29 2020-09-18 株式会社半导体能源研究所 半导体装置以及包括该半导体装置的显示装置
KR20180010205A (ko) 2015-05-22 2018-01-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 및 상기 반도체 장치를 포함하는 표시 장치
US9852926B2 (en) 2015-10-20 2017-12-26 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method for semiconductor device
JP6870926B2 (ja) * 2016-06-22 2021-05-12 株式会社半導体エネルギー研究所 表示装置、表示モジュール、および電子機器
TWI792916B (zh) 2016-06-24 2023-02-11 日商半導體能源研究所股份有限公司 顯示裝置、電子裝置
KR102240021B1 (ko) 2017-03-03 2021-04-14 삼성전자주식회사 저항을 포함하는 반도체 소자
WO2018167591A1 (ja) 2017-03-13 2018-09-20 株式会社半導体エネルギー研究所 半導体装置、および半導体装置の作製方法
CN108987482B (zh) 2017-05-31 2022-05-17 乐金显示有限公司 薄膜晶体管、包括其的栅极驱动器、以及包括该栅极驱动器的显示装置
CN109148592B (zh) * 2017-06-27 2022-03-11 乐金显示有限公司 包括氧化物半导体层的薄膜晶体管，其制造方法和包括其的显示设备
JP7390841B2 (ja) * 2019-09-30 2023-12-04 エイブリック株式会社 半導体装置及びその製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100163874A1 (en) * 2008-12-24 2010-07-01 Semiconductor Energy Laboratory Co., Ltd. Driver circuit and semiconductor device
US20110127519A1 (en) * 2009-11-27 2011-06-02 Samsung Mobile Display Co., Ltd. Organic light emitting display device and method of manufacturing the same

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6117789A (en) * 1999-04-02 2000-09-12 United Microelectronics Corp. Method of manufacturing thin film resistor layer
WO2011043194A1 (en) * 2009-10-09 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
TW201338173A (zh) * 2012-02-28 2013-09-16 Sony Corp 電晶體、製造電晶體之方法、顯示裝置及電子機器
KR101568631B1 (ko) * 2012-06-06 2015-11-11 가부시키가이샤 고베 세이코쇼 박막 트랜지스터

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100163874A1 (en) * 2008-12-24 2010-07-01 Semiconductor Energy Laboratory Co., Ltd. Driver circuit and semiconductor device
US20110127519A1 (en) * 2009-11-27 2011-06-02 Samsung Mobile Display Co., Ltd. Organic light emitting display device and method of manufacturing the same

Also Published As

Publication number Publication date
KR20140120823A (ko) 2014-10-14
JP2014212309A (ja) 2014-11-13
TW201442243A (zh) 2014-11-01
US20140299874A1 (en) 2014-10-09

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