JP2014212309A - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP2014212309A
JP2014212309A JP2014067871A JP2014067871A JP2014212309A JP 2014212309 A JP2014212309 A JP 2014212309A JP 2014067871 A JP2014067871 A JP 2014067871A JP 2014067871 A JP2014067871 A JP 2014067871A JP 2014212309 A JP2014212309 A JP 2014212309A
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JP
Japan
Prior art keywords
oxide semiconductor
semiconductor layer
layer
oxide
insulating layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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JP2014067871A
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English (en)
Japanese (ja)
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JP2014212309A5 (enExample
Inventor
山崎　舜平
Shunpei Yamazaki
舜平 山崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2014067871A priority Critical patent/JP2014212309A/ja
Publication of JP2014212309A publication Critical patent/JP2014212309A/ja
Publication of JP2014212309A5 publication Critical patent/JP2014212309A5/ja
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6758—Thin-film transistors [TFT] characterised by the insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

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  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP2014067871A 2013-04-03 2014-03-28 半導体装置 Withdrawn JP2014212309A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2014067871A JP2014212309A (ja) 2013-04-03 2014-03-28 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2013077615 2013-04-03
JP2013077615 2013-04-03
JP2014067871A JP2014212309A (ja) 2013-04-03 2014-03-28 半導体装置

Publications (2)

Publication Number Publication Date
JP2014212309A true JP2014212309A (ja) 2014-11-13
JP2014212309A5 JP2014212309A5 (enExample) 2017-05-18

Family

ID=51653842

Family Applications (1)

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JP2014067871A Withdrawn JP2014212309A (ja) 2013-04-03 2014-03-28 半導体装置

Country Status (4)

Country Link
US (1) US20140299874A1 (enExample)
JP (1) JP2014212309A (enExample)
KR (1) KR20140120823A (enExample)
TW (1) TWI635613B (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017227746A (ja) * 2016-06-22 2017-12-28 株式会社半導体エネルギー研究所 表示装置、表示モジュール、および電子機器
JP2019009435A (ja) * 2017-06-27 2019-01-17 エルジー ディスプレイ カンパニー リミテッド 酸化物半導体層を含む薄膜トランジスタ、その製造方法及び表示装置
JP2021057484A (ja) * 2019-09-30 2021-04-08 エイブリック株式会社 半導体装置及びその製造方法
JP2022002342A (ja) * 2014-11-20 2022-01-06 株式会社半導体エネルギー研究所 半導体装置
US11417774B2 (en) 2017-05-31 2022-08-16 Lg Display Co., Ltd. Thin film transistor, gate driver including the same, and display device including the gate driver

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140306219A1 (en) * 2013-04-10 2014-10-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR102244553B1 (ko) 2013-08-23 2021-04-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 용량 소자 및 반도체 장치
JP2015065202A (ja) * 2013-09-24 2015-04-09 株式会社東芝 半導体素子、表示装置、半導体素子の製造方法及び表示装置の製造方法
JP2015179247A (ja) 2013-10-22 2015-10-08 株式会社半導体エネルギー研究所 表示装置
CN107111985B (zh) 2014-12-29 2020-09-18 株式会社半导体能源研究所 半导体装置以及包括该半导体装置的显示装置
KR20180010205A (ko) 2015-05-22 2018-01-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 및 상기 반도체 장치를 포함하는 표시 장치
US9852926B2 (en) 2015-10-20 2017-12-26 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method for semiconductor device
TWI792916B (zh) 2016-06-24 2023-02-11 日商半導體能源研究所股份有限公司 顯示裝置、電子裝置
KR102240021B1 (ko) 2017-03-03 2021-04-14 삼성전자주식회사 저항을 포함하는 반도체 소자
WO2018167591A1 (ja) 2017-03-13 2018-09-20 株式会社半導体エネルギー研究所 半導体装置、および半導体装置の作製方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010171394A (ja) * 2008-12-24 2010-08-05 Semiconductor Energy Lab Co Ltd 論理回路及び半導体装置
JP2013058758A (ja) * 2009-10-09 2013-03-28 Semiconductor Energy Lab Co Ltd 半導体装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6117789A (en) * 1999-04-02 2000-09-12 United Microelectronics Corp. Method of manufacturing thin film resistor layer
KR101082174B1 (ko) * 2009-11-27 2011-11-09 삼성모바일디스플레이주식회사 유기전계발광 표시 장치 및 그의 제조 방법
TW201338173A (zh) * 2012-02-28 2013-09-16 Sony Corp 電晶體、製造電晶體之方法、顯示裝置及電子機器
KR101568631B1 (ko) * 2012-06-06 2015-11-11 가부시키가이샤 고베 세이코쇼 박막 트랜지스터

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010171394A (ja) * 2008-12-24 2010-08-05 Semiconductor Energy Lab Co Ltd 論理回路及び半導体装置
JP2013058758A (ja) * 2009-10-09 2013-03-28 Semiconductor Energy Lab Co Ltd 半導体装置

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2022002342A (ja) * 2014-11-20 2022-01-06 株式会社半導体エネルギー研究所 半導体装置
JP7394942B2 (ja) 2014-11-20 2023-12-08 株式会社半導体エネルギー研究所 半導体装置
JP2022179588A (ja) * 2014-11-20 2022-12-02 株式会社半導体エネルギー研究所 半導体装置
JP7153118B2 (ja) 2014-11-20 2022-10-13 株式会社半導体エネルギー研究所 半導体装置
JP2017227746A (ja) * 2016-06-22 2017-12-28 株式会社半導体エネルギー研究所 表示装置、表示モジュール、および電子機器
US11791418B2 (en) 2017-05-31 2023-10-17 Lg Display Co., Ltd. Method for manufacturing thin film transistor, and electronic device
US11417774B2 (en) 2017-05-31 2022-08-16 Lg Display Co., Ltd. Thin film transistor, gate driver including the same, and display device including the gate driver
US12249655B2 (en) 2017-05-31 2025-03-11 Lg Display Co., Ltd. Method for manufacturing thin film transistor, and electronic device
US11201248B2 (en) 2017-06-27 2021-12-14 Lg Display Co., Ltd. Thin-film transistor including oxide semiconductor layer, method of manufacturing the same, and display apparatus including the same
US10608117B2 (en) 2017-06-27 2020-03-31 Lg Display Co., Ltd. Thin-film transistor including oxide semiconductor layer, method of manufacturing the same, and display apparatus including the same
JP2019009435A (ja) * 2017-06-27 2019-01-17 エルジー ディスプレイ カンパニー リミテッド 酸化物半導体層を含む薄膜トランジスタ、その製造方法及び表示装置
US12176437B2 (en) 2017-06-27 2024-12-24 Lg Display Co., Ltd. Thin-film transistor including oxide semiconductor layer, method of manufacturing the same, and display apparatus including the same
JP2021057484A (ja) * 2019-09-30 2021-04-08 エイブリック株式会社 半導体装置及びその製造方法
JP7390841B2 (ja) 2019-09-30 2023-12-04 エイブリック株式会社 半導体装置及びその製造方法

Also Published As

Publication number Publication date
KR20140120823A (ko) 2014-10-14
TWI635613B (zh) 2018-09-11
TW201442243A (zh) 2014-11-01
US20140299874A1 (en) 2014-10-09

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