TWI632642B - 半導體裝置的製造方法及半導體製造裝置 - Google Patents

半導體裝置的製造方法及半導體製造裝置 Download PDF

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TWI632642B
TWI632642B TW103115167A TW103115167A TWI632642B TW I632642 B TWI632642 B TW I632642B TW 103115167 A TW103115167 A TW 103115167A TW 103115167 A TW103115167 A TW 103115167A TW I632642 B TWI632642 B TW I632642B
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substrate
insulating layer
semiconductor device
substrate sub
film
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TW201503285A (zh
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瑞薩電子股份有限公司
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Abstract

是在於抑制在半導體裝置產生因光腐蝕所引起的不良。
是此半導體裝置的製造方法具備：絕緣層形成工程，其係於基板(SUB)上形成具有凹部的絕緣層；導電膜形成工程，其係於凹部內及絕緣層上形成導電膜；研磨工程，其係研磨絕緣層上的導電膜而除去；及洗淨工程，其係於遮光狀態下洗淨絕緣層。
在研磨工程與洗淨工程之間，或洗淨工程之後，利用紅外線感測器(SNS1)來檢測出遮光狀態的基板(SUB)的有無，使基板(SUB)移動。

Description

半導體裝置的製造方法及半導體製造裝置
本發明是有關半導體裝置的製造方法及半導體製造裝置，例如可適用於具有將導電膜研磨而除去的工程之半導體裝置的製造方法及半導體製造裝置。
作為使用在形成半導體裝置的配線層的工程的處理之一，有CMP(Chemical Mechanical Polishing)。使用CMP的工程的概略是如以下般。首先，在基板上的絕緣層中形成凹部，在此凹部內及絕緣層上形成導電膜。其次，利用泥漿(slurry)來研磨除去此絕緣層上的導電膜。然後，洗淨基板。
有關CMP的技術是有專利文獻1記載的技術及專利文獻2記載的技術。
在專利文獻1是記載藉由CMP法來形成銅配線時，銅配線會藉由光侵蝕而被侵蝕。並且，在專利文獻 1，2是記載為了判斷CMP處理的狀況，而檢查來自基板的紅外線放射。
[先行技術文獻] [專利文獻]
[專利文獻1]日本特表2005-505122號公報
[專利文獻2]國際公開第2008/044477號
依構成導電膜的材料，在導電膜產生光腐蝕。另一方面，在CMP工程中，水是不可缺。因此，為了在CMP工程中抑制光腐蝕，而需要在遮光狀態下進行一連串的處理。另一方面，一旦將處理裝置內形成遮光狀態，則在搬送基板時難以檢測出基板的有無。
對於此，為了檢測出基板的有無，而在處理裝置內設置光源，只在搬送時使該光源點亮。而且，為了抑制光腐蝕，而儘可能減弱光源的發光。但，近年來隨配線的微細化進展，為了檢測出基板的有無，即使形成必要最低限度的光量，也會產生因光腐蝕所引起的不良。因此，需要以新的方式來能夠檢測出基板的有無。
其他的課題及新穎的特徵是可由本說明書的記述及附圖來明確得知。
若根據一實施形態，則在將導電膜研磨而除去的工程與洗淨工程之間，或洗淨工程之後，利用感測器來檢測出遮光狀態的基板的有無，使基板移動。
若根據前述一實施形態，則可抑制在半導體裝置產生因光腐蝕所引起的不良。
BL‧‧‧背面膜
BM‧‧‧圍牆金屬膜
BRS‧‧‧筆刷
COV1‧‧‧罩構件
COV2‧‧‧紅外線透過部
DCON‧‧‧汲極接點
DEP1‧‧‧連接孔
DEP2‧‧‧配線溝
DEP3‧‧‧連接孔
DRN‧‧‧汲極領域
GE‧‧‧閘極電極
GINS‧‧‧閘極絕緣膜
HDL‧‧‧高濃度領域
HUS‧‧‧框體
INC1‧‧‧配線
INC2‧‧‧配線
INC3‧‧‧配線
INC4‧‧‧配線
INSL1‧‧‧絕緣層
INSL2‧‧‧絕緣層
INSL3‧‧‧絕緣層
INSL4‧‧‧絕緣層
MC‧‧‧搬送室
MC2‧‧‧交接室
ME1‧‧‧搬送機構
ME2‧‧‧搬送機構
ME3‧‧‧搬送機構
ME4‧‧‧搬送機構
ME5‧‧‧搬送機構
ME6‧‧‧搬送機構
ML1‧‧‧金屬膜
ML2‧‧‧W膜
NZL1‧‧‧噴嘴
NZL2‧‧‧噴嘴
NZL3‧‧‧噴嘴
NZL4‧‧‧噴嘴
NZL5‧‧‧噴嘴
PM1‧‧‧研磨機構
PM2‧‧‧研磨機構
PM3‧‧‧研磨機構
PRC1‧‧‧處理室
PRC2‧‧‧洗淨室
PRC3‧‧‧洗淨室
PRC4‧‧‧洗淨室
PRC5‧‧‧洗淨室
PRC6‧‧‧洗淨室
PRC7‧‧‧洗淨室
PRC8‧‧‧洗淨室
PRC9‧‧‧乾燥室
RL‧‧‧滾筒刷
SCON‧‧‧源極接點
SD‧‧‧半導體裝置
SIL‧‧‧矽化物
SMQ1‧‧‧半導體製造裝置
SMQ2‧‧‧半導體製造裝置
SOU‧‧‧源極層
SOU‧‧‧源極領域
SNS1‧‧‧紅外線感測器
SNS2‧‧‧超音波感測器
STG‧‧‧基板支撐部
STI‧‧‧元件分離膜
SUB‧‧‧基板
VA‧‧‧導通孔
VA2‧‧‧導通孔
VC‧‧‧晶圓收容容器
WCON‧‧‧接點
WL‧‧‧阱
圖1是表示第1實施形態的半導體裝置的構成的剖面圖。
圖2是用以說明形成多層配線層的方法的圖。
圖3是用以說明形成多層配線層的方法的圖。
圖4是表示半導體製造裝置的構成的平面概略圖。
圖5是表示半導體製造裝置所具有的洗淨機構的構成的剖面圖。
圖6是表示基板檢測部的位置圖。
圖7是表示第2實施形態的紅外線感測器的配置圖。
圖8是用以說明超音波感測器的配置圖。
圖9是表示第4實施形態的半導體製造裝置的構成的平面圖。
圖10是用以說明洗淨室的構成的縱剖面圖。
圖11是表示圖10所示的洗淨機構內的紅外線感測器(或超音波感測器)的位置圖。
圖12是用以說明第5實施形態的Al配線層的製造方法的圖。
圖13是用以說明第5實施形態的Al配線層的製造方法的圖。
以下，利用圖面來說明有關實施形態。另外，在所有的圖面中，對於同樣的構成要素附上同樣的符號，適當省略說明。
(第1實施形態)
圖1是表示第1實施形態的半導體裝置SD的構成的剖面圖。在基板SUB是形成有元件分離膜STI及電晶體。元件分離膜STI是從其他的領域來分離形成有電晶體的領域(元件形成領域)。元件分離膜STI是例如使用STI法來形成，但亦可使用LOCOS法來形成。
電晶體是利用形成於基板SUB的阱WL來形成。在阱WL中形成有電晶體的源極領域SOU及汲極領域DRN。源極層SOU及汲極領域DRN是與阱WL反導電型的雜質領域。而且，在基板SUB的表面之中平面視藉由源極領域SOU及汲極領域DRN所夾的領域是依序層疊有閘極絕緣膜GINS及閘極電極GE。閘極絕緣膜GINS是 例如氧化矽膜，但亦可為氧化矽膜以外的絕緣材料，例如藉由比氧化矽更高介電常數的材料所形成。閘極電極GE是例如多晶矽，但亦可為其他的導電材料，例如藉由TiN等的金屬所形成。
閘極電極GE為藉由多晶矽所形成時，在閘極電極GE上是形成有矽化物SIL。矽化物SIL是在源極層SOU上及汲極領域DRN上也被形成。
在基板SUB上是形成有多層配線層。此多層配線層是具有絕緣層INSL1，INSL2。絕緣層INSL1是被形成於基板SUB上，絕緣層INSL2是被形成於絕緣層INSL1上。絕緣層INSL1，INSL2皆為多層配線層的層間絕緣膜。在本圖所示的例子中，在絕緣層INSL1的表層是埋入配線INC1，在絕緣層INSL2的表層是埋入配線INC2。配線INC1，INC2皆為銅配線。配線INC2是經由埋入絕緣層INSL2的導通孔VA來連接至配線INC1。
另外，在配線INC1，INC2的底面及側面是形成有圍牆金屬(Barrier Metal)膜BM。圍牆金屬膜BM是例如具有TiN膜或TaN膜。
在絕緣層INSL1是埋入源極接點SCON及汲極接點DCON。源極接點SCON是連接至源極領域SOU，汲極接點DCON是連接至汲極領域DRN。又，雖未圖示，但實際在絕緣層INSL1是連接至閘極電極GE的接點也被埋入。源極接點SCON，汲極接點DCON，及連接至閘極電極GE的接點皆是連接至彼此不同的配線INC1。
並且，在絕緣層INSL1是接點WCON也被埋入。接點WCON是連接至被形成於阱WL的高濃度領域HDL。高濃度領域HDL是具有與阱WL同一導電型，具有比阱WL更高的雜質濃度。高濃度領域HDL是為了對阱WL賦予基準電位而設。在高濃度領域HDL的表層也形成有矽化物SIL。
另外，在基板SUB的背面是形成有背面膜BL。背面膜BL是與閘極電極GE同時形成。因此，背面膜BL是具有由與閘極電極GE同一材料所構成的層。
半導體裝置SD是例如以下般形成。首先，在基板SUB形成阱WL，而且形成元件分離膜STI。藉此，元件形成領域會分離。其次，在位於元件形成領域的基板SUB形成閘極絕緣膜GINS及閘極電極GE。
其次，在位於元件形成領域的基板SUB形成源極層SOU及汲極領域DRN的延伸領域。其次，在閘極電極GE的側壁形成側壁(side wall)。其次，在位於元件形成領域的基板SUB，藉由離子注入法來形成源極層SOU及汲極領域DRN。如此一來，在基板SUB上形成MOS電晶體。
並且，在位於元件形成領域的基板SUB，藉由離子注入法來形成高濃度領域HDL。
而且，在閘極電極GE上，源極層SOU上，汲極領域DRN上，及高濃度領域HDL上形成用以形成矽化物的金屬層。其次，將此金屬層熱處理。藉此，在閘極 電極GE上，源極層SOU上，汲極領域DRN上，及高濃度領域HDL上形成矽化物SIL。然後，除去金屬層之中未矽化物化的部分。
其次，在元件分離膜上及MOS電晶體上形成多層配線層。
圖2及圖3是用以說明形成多層配線層的方法的圖。本圖是表示在絕緣層INSL1上形成絕緣層INSL2，導通孔VA，及配線INC2的方法。在絕緣層INSL1中埋入有配線INC1。配線INC1是利用鑲嵌法來形成。
首先，如圖2(a)所示般，在絕緣層INSL1上，例如使用CVD法來形成絕緣層INSL2。此時，在絕緣層INSL2形成連接孔DEP1(凹部)及配線溝DEP2(凹部)。連接孔DEP1是用以埋入導通孔VA的孔，貫通絕緣層INSL2。配線溝DEP2是用以埋入配線INC2的溝，不貫通絕緣層INSL2。連接孔DEP1是設在配線溝DEP2的底部的一部分。
其次，如圖2(b)所示般，在配線溝DEP2的底面及側面，連接孔DEP1的底面及側面，及絕緣層INSL2上，利用濺射法來形成圍牆金屬膜BM及種膜。種膜是例如Cu膜。其次，以此種膜作為遮罩來進行電解電鍍。藉此，在配線溝DEP2內，連接孔DEP1內，及絕緣層INSL2上形成金屬膜ML1，例如Cu膜。
其次，如圖3所示般，將位於絕緣層INSL2 上的金屬膜ML1研磨而除去。藉此，形成導通孔VA及配線INC2。在導通孔VA及配線INC2與絕緣層INSL2之間是設有圍牆金屬膜BM。然後，基板SUB被洗淨。另外，此研磨處理及洗淨處理是在遮光狀態下進行。
圖4是表示在除去位於絕緣層INSL2上的金屬膜ML1時所使用的半導體製造裝置SMQ1的構成的平面概略圖。半導體製造裝置SMQ1是具有搬送室MC，處理室PRC1，及洗淨機構。此洗淨機構是具有洗淨室PRC2，PRC3，PRC4，PRC5。
在搬送室MC設有搬送機構ME1。搬送機構ME1是將被收容於晶圓收容容器VC的基板SUB搬入至處理室PRC1內，且使在洗淨室PRC5被處理的基板SUB回到晶圓收容容器VC。
處理室PRC1是在內部具有研磨機構PM1，PM2。研磨機構PM1是利用CMP法來除去絕緣層INSL2上的Cu膜。研磨機構PM2是利用CMP法來除去絕緣層INSL2上的圍牆金屬膜BM。被搬入至處理室PRC1內的基板SUB是在研磨機構PM1被處理後，在研磨機構PM2被處理。然後，在研磨機構PM2被處理的基板SUB是被搬送至洗淨機構的洗淨室PRC2。
另外，在處理室PRC1內的基板SUB的搬送是藉由處理室PRC1內的搬送機構ME2(移動部)來進行。並且，從處理室PRC1往洗淨室PRC2之基板SUB的搬送是藉由處理室PRC1內的搬送機構ME4(移動部)來 進行。並且，在洗淨室PRC2，PRC3，PRC4，PRC5的基板SUB的搬送是藉由搬送機構ME3(移動部)來進行。
圖5是表示半導體製造裝置SMQ1所具有的洗淨機構的構成的剖面圖。如上述般，半導體製造裝置SMQ1是具有洗淨室PRC2，PRC3，PRC4，PRC5。基板SUB是依洗淨室PRC2，PRC3，PRC4，PRC5的順序搬送，在各洗淨室內被洗淨。
在洗淨室PRC2，PRC3，PRC4內是設有基板支撐部STG，及噴嘴NZL1，NZL2。基板支撐部STG是保持基板SUB。在本圖所示的例子中，基板支撐部STG是將基板SUB保持於水平。噴嘴NZL1是對基板SUB的表面供給洗淨液或純水。噴嘴NZL2是對基板SUB的背面供給洗淨液或純水。
並且，在洗淨室PRC2，PRC3中，滾筒刷RL是在分別對向於基板SUB的表面及背面的位置，在洗淨室PRC4內，筆刷BRS是設在對向於基板SUB的表面的位置。滾筒刷RL及筆刷BRS皆是洗淨基板SUB。
而且，在洗淨室PRC5內，除了基板支撐部STG以外，還設有噴嘴NZL3，NZL4。噴嘴NZL3是對基板SUB的表面供給純水，噴嘴NZL4是對基板SUB的表面供給IPA(isopropyl alcohol)的蒸氣，使基板SUB的表面乾燥。
半導體製造裝置SMQ1所具有的各處理室是藉由框體HUS(遮光構件)來遮光。因此，基板SUB是 在處理中及搬送中皆不會接受到光。
而且，上述搬送機構ME2，ME3，ME4是搬送基板SUB時，檢測出基板SUB的位置。以下，說明有關檢測出基板SUB的位置的基板檢測部。
圖6是表示基板檢測部的位置的圖。本圖所示的例子是顯示分別在洗淨室PRC2，PRC3，PRC4，PRC5內設有基板檢測部的情況。但，此基板檢測部是亦可分別對於研磨機構PM1，研磨機構PM2設置。
此基板檢測部是具有感測器。由於此感測器可檢測出遮光狀態的基板SUB的位置，因此不需要照明光。在本圖所示的例子中，由於基板SUB為矽基板，因此感測器是可使用紅外線感測器SNS1。
矽是紅外線的放射率高。因此，基板檢測部是可藉由紅外線感測器SNS1檢測出來自基板SUB的紅外線，而檢測出基板SUB的有無。例如基板檢測部是當來自紅外線感測器SNS1的檢測值為形成基準值以上時，紅外線感測器SNS1所檢測出的紅外線的波長是例如8μm以上10μm以下。
紅外線感測器SNS1是設在與被載置於基板支撐部STG的基板SUB的背面或側面對向的位置為理想。此理由是因為基板SUB的表面被水或洗淨液的膜所覆蓋，所以基板SUB的表面的紅外線的放射率會降低。
以上，若根據本實施形態，則在半導體製造裝置SMQ1是設有檢測出基板SUB的位置的基板檢測 部。此基板檢測部是檢測出遮光狀態的基板SUB的有無。因此，在檢測出基板SUB的有無時不需要照明光。因此，在製造半導體裝置時，可抑制在配線INC2或導通孔VA等的導電圖案產生光腐蝕。所以，可抑制在半導體裝置產生因光腐蝕所引起的不良。
(第2實施形態)
圖7是表示第2實施形態的紅外線感測器SNS1的配置圖。本實施形態是除了紅外線感測器SNS1以罩構件COV1所覆蓋的點以外，其餘與第1實施形態同樣。
在本圖所示的例子中，罩構件COV1是筒狀的構件。而且，罩構件COV1的上端是以紅外線透過部COV2所覆蓋。紅外線透過部COV2是藉由透過紅外線的材料(例如聚乙烯)所形成。並且，紅外線透過部COV2的表面是施以撥水處理為理想，且具有傾斜面(例如半球狀)為理想。如此一來，可抑制水附著於紅外線透過部COV2的表面。
藉由本實施形態也可抑制在半導體裝置產生因光腐蝕所引起的不良。又，由於以罩構件COV1來覆蓋紅外線感測器SNS1，因此可抑制水附著於紅外線感測器SNS1而基板SUB的檢測感度降低。又，由於形成使水不會附著於罩構件COV1的紅外線透過部COV2的表面，因此更可抑制基板SUB的檢測感度降低。
(第3實施形態)
本實施形態的半導體裝置的製造方法是除了半導體製造裝置SMQ1為取代紅外線感測器SNS1而具有超音波感測器SNS2的點以外，其餘與第1實施形態的半導體裝置的製造方法同樣的構成。超音波感測器SNS2是具有超音波的發送源及超音波的檢測感測器。
圖8是用以說明超音波感測器SNS2的配置的圖。如本圖所示般，超音波感測器SNS2是配置在基板SUB的上方，超音波的振盪面及超音波的接收面朝下方。如此一來，可抑制水等的液體附著於超音波的振盪面及超音波的接收面。
超音波感測器SNS2在檢測出基板SUB的有無時，超音波感測器SNS2是朝應有基板SUB的位置來振盪超音波。而且，超音波感測器SNS2在以一定以上的強度檢測出超音波的反射波時，判斷成有基板SUB。另外，超音波感測器SNS2是對於基板SUB垂直為理想。如此一來，超音波感測器SNS2的反射波的檢測感度會變高。
藉由本實施形態也可抑制在半導體裝置產生因光腐蝕所引起的不良。
(第4實施形態)
圖9是表示在第4實施形態的半導體裝置的製造方法所使用的半導體製造裝置SMQ2的構成的平面圖。本實施形態是除了取代半導體製造裝置SMQ1而使用半導體製造 裝置SMQ2的點以外，其餘與第1~第3實施形態的任一實施形態同樣。
半導體製造裝置SMQ2是在搬送室MC與處理室PRC1之間具有洗淨機構。而且，在處理室PRC1內，除了研磨機構PM1，PM2以外，還設有研磨機構PM3。而且，在處理室PRC1內的基板SUB的搬送，及從處理室PRC1往洗淨機構之基板SUB的搬送皆是利用搬送機構ME5來進行。
並且，洗淨機構是具有交接室MC2，洗淨室PRC6，PRC7，PRC8，及乾燥室PRC9。交接室MC2是從處理室PRC1的搬送機構ME5接受基板SUB而保持。在洗淨機構內的基板SUB的搬送是利用搬送機構ME6來進行。並且，以洗淨機構來處理之後的基板SUB是利用搬送室MC內的搬送機構來搬出。
圖10是用以說明洗淨室PRC6，PRC7，PRC8，及乾燥室PRC9的構成的縱剖面圖。在該等的各室中，基板支撐部STG是將基板SUB支撐於垂直方向。
洗淨室PRC6是具有洗淨槽。在洗淨槽中充滿洗淨液或純水。基板SUB是被浸漬於洗淨液或純水。洗淨室PRC7，PRC8皆具有噴嘴NZL5及滾筒刷RL。噴嘴NZL5是對向於基板SUB的兩面而設，對基板SUB的各面吐出洗淨液或純水。滾筒刷RL是洗淨基板SUB的兩面。
乾燥室PRC9是對於在洗淨室PRC8被處理之 後的基板SUB進行乾燥處理。
圖11是表示圖10所示之洗淨機構內的紅外線感測器SNS1(或超音波感測器SNS2)的位置的圖。如上述般，在洗淨機構內，基板SUB是被保持成垂直。而且，紅外線感測器SNS1(或超音波感測器SNS2)是設置在基板SUB的上方或旁邊。
另外，在處理室PRC1內的紅外線感測器SNS1(或超音波感測器SNS2)的配置是與第1~第3實施形態的任一形態同樣。
藉由本實施形態也可取得與第1~第3實施形態同樣的效果。
(第5實施形態)
本實施形態的半導體裝置SD是除了多層配線層的至少一部分為Al配線層以外，其餘與第1實施形態的半導體裝置SD同樣。因此，本實施形態的半導體裝置SD的製造方法是除了具有Al配線層的形成工程的點以外，其餘與第1~第4實施形態的任一實施形態同樣。
圖12及圖13是用以說明本實施形態的Al配線層的製造方法的圖。在絕緣層INSL3上是形成有配線INC3。配線INC3是Al配線。配線INC3是藉由選擇性地除去絕緣層INSL3上的Al膜來形成。
而且，如圖12(a)所示般，在絕緣層INSL3上及配線INC3上，例如利用CVD法來形成絕緣層 INSL4。其次，在絕緣層INSL4中形成連接孔DEP3。連接孔DEP3是貫通絕緣層INSL4。而且，在連接孔DEP3的底面是露出配線INC3。
其次，如圖12(b)所示般，在連接孔DEP3的底面及側面，及絕緣層INSL3上形成圍牆金屬膜BM及W膜ML2。圍牆金屬膜BM是利用濺射法來形成，W膜ML2是利用CVD法來形成。
其次，如圖13(a)所示般，將位於絕緣層INSL4上的W膜ML2研磨而除去。藉此，形成導通孔VA2。在此研磨是第1~第4實施形態的任一實施形態所示的半導體製造裝置SMQ1或半導體製造裝置SMQ2會被使用。
然後，如圖13(b)所示般，在絕緣層INSL4上及導通孔VA2上形成Al膜，選擇性地除去此Al膜。藉此，形成配線INC4。配線INC4是經由導通孔VA2來連接至配線INC3。
在本實施形態中，形成導通孔VA2時是第1~第4實施形態的任一實施形態所示的半導體製造裝置SMQ1或半導體製造裝置SMQ2會被使用。因此，可抑制在圍牆金屬膜BM或W膜ML2產生光腐蝕。因此，可抑制在半導體裝置產生因光腐蝕所引起的不良。
以上，根據實施形態來具體說明本發明者的發明，但本發明並非限於前述實施形態，當然可在不脫離其要旨的範圍實施各種的變更。

Claims (10)

  1. 一種半導體裝置的製造方法，其特徵係具備：絕緣層形成工程，其係於基板上形成具有凹部的絕緣層；導電膜形成工程，其係於前述凹部內及前述絕緣層上形成導電膜；研磨工程，其係研磨前述絕緣層上的前述導電膜而除去；及洗淨工程，其係於遮光狀態下洗淨前述絕緣層，在前述研磨工程與前述洗淨工程之間，或前述洗淨工程之後，具備移動工程，其係利用紅外線感測器來檢測出遮光狀態的前述基板的有無，使前述基板移動；在前述移動工程中，前述紅外線感測器係配置於前述基板的背面側，檢測出從前述基板的背面放射的紅外線，藉此檢測出前述基板的有無。
  2. 如申請專利範圍第1項之半導體裝置的製造方法，其中，前述紅外線感測器係配置於前述基板的側面側，檢測出從前述基板的側面放射的紅外線，藉此檢測出前述基板的有無。
  3. 如申請專利範圍第2項之半導體裝置的製造方法，其中，設置覆蓋前述紅外線感測器的罩構件。
  4. 如申請專利範圍第1項之半導體裝置的製造方法，其中，前述導電膜為Cu膜。
  5. 如申請專利範圍第1項之半導體裝置的製造方法， 其中，前述凹部係貫通前述絕緣層，前述導電膜為W膜。
  6. 一種半導體製造裝置，其特徵係具備：基板支撐部，其係支撐基板；移動部，其係使被前述基板支撐部所支撐的基板移動；遮光構件，其係包圍前述基板支撐部及前述移動部而遮光；及基板檢測部，其係配置於前述遮光構件的內部，被前述基板支撐部所支撐，檢測出遮光狀態的基板的有無；前述基板檢測部係配置於前述基板的背面側，檢測出從前述基板的背面放射的紅外線，藉此檢測出前述基板的有無。
  7. 如申請專利範圍第6項之半導體裝置的製造方法，其中，前述基板檢測部係配置於前述基板的側面側，檢測出從前述基板的側面放射的紅外線，藉此檢測出前述基板的有無。
  8. 如申請專利範圍第6項之半導體製造裝置，其中，更具備噴嘴，其係對被前述基板支撐部所支撐的基板吐出洗淨液。
  9. 如申請專利範圍第6項之半導體製造裝置，其中，前述基板支撐部係將前述基板支撐於水平方向。
  10. 如申請專利範圍第6項之半導體製造裝置，其中，前述基板支撐部係將前述基板支撐於垂直方向。
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