TWI632606B - Method of etching an insulating film - Google Patents

Method of etching an insulating film Download PDF

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Publication number
TWI632606B
TWI632606B TW104118241A TW104118241A TWI632606B TW I632606 B TWI632606 B TW I632606B TW 104118241 A TW104118241 A TW 104118241A TW 104118241 A TW104118241 A TW 104118241A TW I632606 B TWI632606 B TW I632606B
Authority
TW
Taiwan
Prior art keywords
period
frequency power
insulating film
gas
etching
Prior art date
Application number
TW104118241A
Other languages
English (en)
Chinese (zh)
Other versions
TW201611117A (zh
Inventor
高橋陽
中山溪
五十嵐義樹
廣津信
Original Assignee
東京威力科創股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 東京威力科創股份有限公司 filed Critical 東京威力科創股份有限公司
Publication of TW201611117A publication Critical patent/TW201611117A/zh
Application granted granted Critical
Publication of TWI632606B publication Critical patent/TWI632606B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H10P14/69215—
    • H10P50/242—
    • H10P50/244—
    • H10P50/268—
    • H10P50/283—
    • H10P50/73—
    • H10P72/0421—
    • H10W20/081—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
TW104118241A 2014-06-19 2015-06-05 Method of etching an insulating film TWI632606B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014126520A JP6327970B2 (ja) 2014-06-19 2014-06-19 絶縁膜をエッチングする方法
JP2014-126520 2014-06-19

Publications (2)

Publication Number Publication Date
TW201611117A TW201611117A (zh) 2016-03-16
TWI632606B true TWI632606B (zh) 2018-08-11

Family

ID=54870293

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104118241A TWI632606B (zh) 2014-06-19 2015-06-05 Method of etching an insulating film

Country Status (6)

Country Link
US (1) US9312105B2 (Direct)
JP (1) JP6327970B2 (Direct)
KR (1) KR101799149B1 (Direct)
CN (1) CN105304484B (Direct)
SG (1) SG10201504420RA (Direct)
TW (1) TWI632606B (Direct)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6315809B2 (ja) 2014-08-28 2018-04-25 東京エレクトロン株式会社 エッチング方法
JP6410592B2 (ja) * 2014-12-18 2018-10-24 東京エレクトロン株式会社 プラズマエッチング方法
JP6568822B2 (ja) * 2016-05-16 2019-08-28 東京エレクトロン株式会社 エッチング方法
JP6811202B2 (ja) * 2018-04-17 2021-01-13 東京エレクトロン株式会社 エッチングする方法及びプラズマ処理装置
JP6846387B2 (ja) * 2018-06-22 2021-03-24 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
FR3091410B1 (fr) * 2018-12-26 2021-01-15 St Microelectronics Crolles 2 Sas Procédé de gravure
WO2021090516A1 (ja) * 2019-11-08 2021-05-14 東京エレクトロン株式会社 エッチング方法
JP7382848B2 (ja) * 2020-02-20 2023-11-17 東京エレクトロン株式会社 基板処理方法および基板処理装置
JP7433095B2 (ja) * 2020-03-18 2024-02-19 東京エレクトロン株式会社 基板処理方法及び基板処理装置
KR102897387B1 (ko) * 2023-11-30 2025-12-05 앱솔릭스 인코포레이티드 패키징 기판의 제조방법

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000311890A (ja) * 1999-03-22 2000-11-07 Samsung Electronics Co Ltd プラズマエッチング方法および装置
EP1780777A1 (en) * 2004-06-21 2007-05-02 Tokyo Electron Ltd. Plasma processing device amd method
US20080110859A1 (en) * 2006-10-06 2008-05-15 Tokyo Electron Limited Plasma etching apparatus and method
US20100140221A1 (en) * 2008-12-09 2010-06-10 Tokyo Electron Limited Plasma etching apparatus and plasma cleaning method
US20100190350A1 (en) * 2009-01-26 2010-07-29 Tokyo Electron Limited Plasma etching apparatus, plasma etching method and storage medium

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3559429B2 (ja) * 1997-07-02 2004-09-02 松下電器産業株式会社 プラズマ処理方法
US6589437B1 (en) * 1999-03-05 2003-07-08 Applied Materials, Inc. Active species control with time-modulated plasma
WO2001012873A1 (en) * 1999-08-17 2001-02-22 Tokyo Electron Limited Pulsed plasma processing method and apparatus
US6916746B1 (en) * 2003-04-09 2005-07-12 Lam Research Corporation Method for plasma etching using periodic modulation of gas chemistry
US20110139748A1 (en) * 2009-12-15 2011-06-16 University Of Houston Atomic layer etching with pulsed plasmas
JP2012142495A (ja) 2011-01-05 2012-07-26 Ulvac Japan Ltd プラズマエッチング方法及びプラズマエッチング装置
JP5804978B2 (ja) * 2011-03-03 2015-11-04 東京エレクトロン株式会社 プラズマエッチング方法及びコンピュータ記録媒体
JP5977509B2 (ja) 2011-12-09 2016-08-24 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000311890A (ja) * 1999-03-22 2000-11-07 Samsung Electronics Co Ltd プラズマエッチング方法および装置
EP1780777A1 (en) * 2004-06-21 2007-05-02 Tokyo Electron Ltd. Plasma processing device amd method
US20080110859A1 (en) * 2006-10-06 2008-05-15 Tokyo Electron Limited Plasma etching apparatus and method
US20100140221A1 (en) * 2008-12-09 2010-06-10 Tokyo Electron Limited Plasma etching apparatus and plasma cleaning method
US20140020709A1 (en) * 2008-12-09 2014-01-23 Tokyo Electron Limited Plasma etching apparatus and plasma cleaning method
US20100190350A1 (en) * 2009-01-26 2010-07-29 Tokyo Electron Limited Plasma etching apparatus, plasma etching method and storage medium

Also Published As

Publication number Publication date
CN105304484A (zh) 2016-02-03
KR101799149B1 (ko) 2017-11-17
JP6327970B2 (ja) 2018-05-23
KR20150146394A (ko) 2015-12-31
US9312105B2 (en) 2016-04-12
CN105304484B (zh) 2018-04-10
JP2016004983A (ja) 2016-01-12
TW201611117A (zh) 2016-03-16
SG10201504420RA (en) 2016-01-28
US20150371830A1 (en) 2015-12-24

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