TWI630857B - Substrate manufacturing method and laser processing device - Google Patents
Substrate manufacturing method and laser processing device Download PDFInfo
- Publication number
- TWI630857B TWI630857B TW105117381A TW105117381A TWI630857B TW I630857 B TWI630857 B TW I630857B TW 105117381 A TW105117381 A TW 105117381A TW 105117381 A TW105117381 A TW 105117381A TW I630857 B TWI630857 B TW I630857B
- Authority
- TW
- Taiwan
- Prior art keywords
- surface layer
- layer
- substrate
- hole
- film
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 62
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 24
- 238000012545 processing Methods 0.000 title claims description 17
- 239000002344 surface layer Substances 0.000 claims abstract description 129
- 239000010410 layer Substances 0.000 claims abstract description 122
- 239000004020 conductor Substances 0.000 claims abstract description 101
- 239000011248 coating agent Substances 0.000 claims abstract description 30
- 238000000576 coating method Methods 0.000 claims abstract description 30
- 239000011344 liquid material Substances 0.000 claims abstract description 26
- 239000000463 material Substances 0.000 claims abstract description 18
- 230000003287 optical effect Effects 0.000 claims abstract description 8
- 238000000034 method Methods 0.000 claims description 38
- 230000002093 peripheral effect Effects 0.000 claims description 11
- 239000007788 liquid Substances 0.000 claims description 2
- 230000000149 penetrating effect Effects 0.000 claims 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 25
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 18
- 239000011888 foil Substances 0.000 description 17
- 239000011889 copper foil Substances 0.000 description 16
- 238000009826 distribution Methods 0.000 description 10
- 239000001569 carbon dioxide Substances 0.000 description 9
- 229910002092 carbon dioxide Inorganic materials 0.000 description 9
- 229910052802 copper Inorganic materials 0.000 description 9
- 239000010949 copper Substances 0.000 description 9
- 230000031700 light absorption Effects 0.000 description 8
- 239000004593 Epoxy Substances 0.000 description 6
- 229920005989 resin Polymers 0.000 description 6
- 239000011347 resin Substances 0.000 description 6
- 238000009413 insulation Methods 0.000 description 4
- 235000011837 pasties Nutrition 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 238000003672 processing method Methods 0.000 description 3
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 2
- 239000005751 Copper oxide Substances 0.000 description 2
- 238000000862 absorption spectrum Methods 0.000 description 2
- 229910000431 copper oxide Inorganic materials 0.000 description 2
- 238000005553 drilling Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- 239000000654 additive Substances 0.000 description 1
- 238000002788 crimping Methods 0.000 description 1
- 238000005238 degreasing Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0011—Working of insulating substrates or insulating layers
- H05K3/0044—Mechanical working of the substrate, e.g. drilling or punching
- H05K3/0047—Drilling of holes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
- H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
- H01L21/02288—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating printing, e.g. ink-jet printing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/7687—Thin films associated with contacts of capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
- H01L21/76892—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances modifying the pattern
- H01L21/76894—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances modifying the pattern using a laser, e.g. laser cutting, laser direct writing, laser repair
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/10—Using electric, magnetic and electromagnetic fields; Using laser light
- H05K2203/107—Using laser light
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015-112762 | 2015-06-03 | ||
| JP2015112762A JP6501627B2 (ja) | 2015-06-03 | 2015-06-03 | レーザ加工装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201701741A TW201701741A (zh) | 2017-01-01 |
| TWI630857B true TWI630857B (zh) | 2018-07-21 |
Family
ID=57575233
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW105117381A TWI630857B (zh) | 2015-06-03 | 2016-06-02 | Substrate manufacturing method and laser processing device |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP6501627B2 (ko) |
| KR (1) | KR101840932B1 (ko) |
| CN (1) | CN106255319B (ko) |
| TW (1) | TWI630857B (ko) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7154147B2 (ja) * | 2019-01-31 | 2022-10-17 | 京セラ株式会社 | 印刷配線板の製造方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070054216A1 (en) * | 2005-09-02 | 2007-03-08 | Konica Minolta Medical & Graphic, Inc. | Near-infrared ray absorbing material and production method of the same |
| TWI481325B (zh) * | 2012-03-09 | 2015-04-11 | Mitsui Mining & Smelting Co | 印刷配線板的製造方法及雷射加工用銅箔 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4078715B2 (ja) * | 1998-06-02 | 2008-04-23 | 三菱瓦斯化学株式会社 | 信頼性に優れたビア孔の形成方法 |
| SK13472001A3 (sk) * | 1999-03-23 | 2002-04-04 | Circuit Foil Luxembourg Trading S. A. R. L. | Spôsob výroby viacvrstvovej platne stlačenými spojmi a kompozitnej fólie použitej v tejto doske |
| JP2001144411A (ja) * | 1999-09-03 | 2001-05-25 | Mec Kk | プリント配線板の孔あけ法およびそれに用いる表面処理剤 |
| JP2003248207A (ja) * | 2002-02-22 | 2003-09-05 | Fujitsu Display Technologies Corp | 液晶表示パネルの製造方法および製造装置 |
| JP2006202840A (ja) * | 2005-01-18 | 2006-08-03 | Seiko Epson Corp | 配線基板の製造方法 |
| JP2011171724A (ja) * | 2010-01-19 | 2011-09-01 | Shibaura Mechatronics Corp | 基板の配線修正方法、基板の配線修正装置及び基板の配線形成装置 |
| JP2014143237A (ja) * | 2013-01-22 | 2014-08-07 | Toppan Printing Co Ltd | ビアホールの形成方法及び多層プリント配線板の製造方法 |
-
2015
- 2015-06-03 JP JP2015112762A patent/JP6501627B2/ja active Active
-
2016
- 2016-06-01 KR KR1020160067893A patent/KR101840932B1/ko active IP Right Grant
- 2016-06-02 CN CN201610390237.4A patent/CN106255319B/zh active Active
- 2016-06-02 TW TW105117381A patent/TWI630857B/zh not_active IP Right Cessation
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070054216A1 (en) * | 2005-09-02 | 2007-03-08 | Konica Minolta Medical & Graphic, Inc. | Near-infrared ray absorbing material and production method of the same |
| TWI481325B (zh) * | 2012-03-09 | 2015-04-11 | Mitsui Mining & Smelting Co | 印刷配線板的製造方法及雷射加工用銅箔 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106255319B (zh) | 2019-03-08 |
| JP6501627B2 (ja) | 2019-04-17 |
| KR101840932B1 (ko) | 2018-03-21 |
| TW201701741A (zh) | 2017-01-01 |
| KR20160142779A (ko) | 2016-12-13 |
| JP2016225554A (ja) | 2016-12-28 |
| CN106255319A (zh) | 2016-12-21 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |