TWI620765B - 光阻下層膜形成用組成物、下層膜及圖案形成方法 - Google Patents

光阻下層膜形成用組成物、下層膜及圖案形成方法 Download PDF

Info

Publication number
TWI620765B
TWI620765B TW103119197A TW103119197A TWI620765B TW I620765 B TWI620765 B TW I620765B TW 103119197 A TW103119197 A TW 103119197A TW 103119197 A TW103119197 A TW 103119197A TW I620765 B TWI620765 B TW I620765B
Authority
TW
Taiwan
Prior art keywords
composition
forming
formula
film
parts
Prior art date
Application number
TW103119197A
Other languages
English (en)
Chinese (zh)
Other versions
TW201502159A (zh
Inventor
中杉茂正
絹田貴史
李晉
柳田浩志
鈴木理人
井手泰明
王曉偉
Original Assignee
Ａｚ電子材料盧森堡有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ａｚ電子材料盧森堡有限公司 filed Critical Ａｚ電子材料盧森堡有限公司
Publication of TW201502159A publication Critical patent/TW201502159A/zh
Application granted granted Critical
Publication of TWI620765B publication Critical patent/TWI620765B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G83/00—Macromolecular compounds not provided for in groups C08G2/00 - C08G81/00
    • C08G83/002—Dendritic macromolecules
    • C08G83/003—Dendrimers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G65/00—Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule
    • C08G65/02—Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule from cyclic ethers by opening of the heterocyclic ring
    • C08G65/32—Polymers modified by chemical after-treatment
    • C08G65/329—Polymers modified by chemical after-treatment with organic compounds
    • C08G65/331—Polymers modified by chemical after-treatment with organic compounds containing oxygen
    • C08G65/332—Polymers modified by chemical after-treatment with organic compounds containing oxygen containing carboxyl groups, or halides, or esters thereof
    • C08G65/3322—Polymers modified by chemical after-treatment with organic compounds containing oxygen containing carboxyl groups, or halides, or esters thereof acyclic
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G65/00—Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule
    • C08G65/02—Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule from cyclic ethers by opening of the heterocyclic ring
    • C08G65/32—Polymers modified by chemical after-treatment
    • C08G65/329—Polymers modified by chemical after-treatment with organic compounds
    • C08G65/331—Polymers modified by chemical after-treatment with organic compounds containing oxygen
    • C08G65/332—Polymers modified by chemical after-treatment with organic compounds containing oxygen containing carboxyl groups, or halides, or esters thereof
    • C08G65/3324—Polymers modified by chemical after-treatment with organic compounds containing oxygen containing carboxyl groups, or halides, or esters thereof cyclic
    • C08G65/3326—Polymers modified by chemical after-treatment with organic compounds containing oxygen containing carboxyl groups, or halides, or esters thereof cyclic aromatic
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G65/00—Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule
    • C08G65/02—Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule from cyclic ethers by opening of the heterocyclic ring
    • C08G65/32—Polymers modified by chemical after-treatment
    • C08G65/329—Polymers modified by chemical after-treatment with organic compounds
    • C08G65/337—Polymers modified by chemical after-treatment with organic compounds containing other elements
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D201/00—Coating compositions based on unspecified macromolecular compounds
    • C09D201/005—Dendritic macromolecules
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Materials For Photolithography (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Polyethers (AREA)
  • Polyesters Or Polycarbonates (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW103119197A 2013-06-03 2014-06-03 光阻下層膜形成用組成物、下層膜及圖案形成方法 TWI620765B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP2013-116731 2013-06-03
JP2013116731 2013-06-03

Publications (2)

Publication Number Publication Date
TW201502159A TW201502159A (zh) 2015-01-16
TWI620765B true TWI620765B (zh) 2018-04-11

Family

ID=52008150

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103119197A TWI620765B (zh) 2013-06-03 2014-06-03 光阻下層膜形成用組成物、下層膜及圖案形成方法

Country Status (4)

Country Link
JP (1) JP6495167B2 (ja)
KR (1) KR102161960B1 (ja)
TW (1) TWI620765B (ja)
WO (1) WO2014196509A1 (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102348675B1 (ko) 2019-03-06 2022-01-06 삼성에스디아이 주식회사 레지스트 하층막용 조성물 및 이를 이용한 패턴 형성 방법

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012083594A (ja) * 2010-10-13 2012-04-26 Jsr Corp 感光性組成物、カラーフィルタ及び樹状分岐化合物

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6156479A (en) 1997-09-30 2000-12-05 Brewer Science, Inc. Thermosetting anti-refective coatings
US20050214674A1 (en) 2004-03-25 2005-09-29 Yu Sui Positive-working photoimageable bottom antireflective coating
JP2008056894A (ja) * 2006-08-03 2008-03-13 Mie Univ 高分岐ポリマー及びその製造方法、並びに、高分岐ポリマー合成用モノマー及びその前駆体
JP4809378B2 (ja) * 2007-03-13 2011-11-09 信越化学工業株式会社 レジスト下層膜材料およびこれを用いたパターン形成方法
JP2010126569A (ja) * 2008-11-26 2010-06-10 Hakuto Co Ltd 感光性樹脂組成物
KR20120101534A (ko) 2009-12-14 2012-09-13 닛산 가가쿠 고교 가부시키 가이샤 레지스트 하층막 형성 조성물
WO2011088343A2 (en) * 2010-01-17 2011-07-21 Polyera Corporation Dielectric materials and methods of preparation and use thereof
JP5737526B2 (ja) 2010-08-02 2015-06-17 日産化学工業株式会社 レジスト下層膜形成組成物及びそれを用いたレジストパターンの形成方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012083594A (ja) * 2010-10-13 2012-04-26 Jsr Corp 感光性組成物、カラーフィルタ及び樹状分岐化合物

Also Published As

Publication number Publication date
KR20160014724A (ko) 2016-02-11
KR102161960B1 (ko) 2020-10-07
JP6495167B2 (ja) 2019-04-03
TW201502159A (zh) 2015-01-16
WO2014196509A1 (ja) 2014-12-11
JPWO2014196509A1 (ja) 2017-02-23

Similar Documents

Publication Publication Date Title
KR101960604B1 (ko) 네거티브형 레지스트 조성물 및 레지스트 패턴 형성 방법
JP4253088B2 (ja) 反射防止膜組成物およびその準備方法、ならびに反射防止膜およびその形成方法
JP5445488B2 (ja) 化学増幅ネガ型レジスト組成物及びパターン形成方法
TWI507822B (zh) Normal type photoresist composition and pattern forming method
TW594402B (en) Novel onium salts, photoacid generators, resist compositions, and patterning process
KR101906788B1 (ko) 레지스트 하층막 형성 조성물
JP5054089B2 (ja) ネガ型レジスト組成物及びパターン形成方法
US7655379B2 (en) Ionic, organic photoacid generators for DUV, MUV and optical lithography based on peraceptor-substituted aromatic anions
TWI814915B (zh) 阻劑底層膜形成組成物及使用該組成物之阻劑圖型之形成方法
JP5796237B2 (ja) フェノール系分子性ガラス、およびフェノール系分子ガラスを含むフォトレジスト組成物、および基板上にレジスト像を発生させるための方法
JP5584573B2 (ja) ネガ型レジスト組成物及びパターン形成方法
JP2009120612A (ja) 感光性化合物及びそれを含むフォトレジスト組成物
US20090181319A1 (en) Aromatic fluorine-free photoacid generators and photoresist compositions containing the same
US9170494B2 (en) Antireflective compositions and methods of using same
KR102295270B1 (ko) 모노머, 폴리머, 네거티브형 레지스트 조성물, 포토마스크 블랭크, 및 레지스트 패턴 형성 방법
TWI620765B (zh) 光阻下層膜形成用組成物、下層膜及圖案形成方法
JP6603789B2 (ja) 半導体パターン形成のためのＫｒＦレーザー用ネガティブ型フォトレジスト組成物
JP2015200796A (ja) 下層膜形成用組成物
KR20190078309A (ko) 레지스트 하층막용 조성물 및 이를 이용한 패턴형성방법
KR20090067767A (ko) 현상액에 용해 가능한 근자외선 바닥 반사방지막 조성물 및이를 이용한 패턴화된 재료 형성 방법
JP2022142290A (ja) 非化学増幅型ネガ型レジスト組成物、並びに、当該レジスト組成物を用いたレジストパターンの製造方法及びモールド