TWI620259B - 用於晶粒對晶粒之檢測之自動對焦系統及方法 - Google Patents
用於晶粒對晶粒之檢測之自動對焦系統及方法 Download PDFInfo
- Publication number
- TWI620259B TWI620259B TW103125597A TW103125597A TWI620259B TW I620259 B TWI620259 B TW I620259B TW 103125597 A TW103125597 A TW 103125597A TW 103125597 A TW103125597 A TW 103125597A TW I620259 B TWI620259 B TW I620259B
- Authority
- TW
- Taiwan
- Prior art keywords
- offset
- band
- corrected
- focus
- vector
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
- G03F1/84—Inspecting
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/7065—Defects, e.g. optical inspection of patterned layer for defects
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
- H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
- H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
- G01N2021/95676—Masks, reticles, shadow masks
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Automatic Focus Adjustment (AREA)
- Microscoopes, Condenser (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201361858308P | 2013-07-25 | 2013-07-25 | |
| US61/858,308 | 2013-07-25 | ||
| US14/336,875 US9110039B2 (en) | 2013-07-25 | 2014-07-21 | Auto-focus system and methods for die-to-die inspection |
| US14/336,875 | 2014-07-21 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201519344A TW201519344A (zh) | 2015-05-16 |
| TWI620259B true TWI620259B (zh) | 2018-04-01 |
Family
ID=52390257
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW103125597A TWI620259B (zh) | 2013-07-25 | 2014-07-25 | 用於晶粒對晶粒之檢測之自動對焦系統及方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US9110039B2 (https=) |
| EP (1) | EP3025369B1 (https=) |
| JP (1) | JP6452694B2 (https=) |
| KR (1) | KR102102018B1 (https=) |
| TW (1) | TWI620259B (https=) |
| WO (1) | WO2015013445A1 (https=) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3086175B1 (en) | 2015-04-22 | 2022-01-26 | IMEC vzw | Method for hotspot detection and ranking of a lithographic mask |
| JP6732680B2 (ja) * | 2017-03-08 | 2020-07-29 | 株式会社ニューフレアテクノロジー | マップ作成方法、マスク検査方法およびマスク検査装置 |
| JP7079569B2 (ja) * | 2017-04-21 | 2022-06-02 | 株式会社ニューフレアテクノロジー | 検査方法 |
| US10598617B2 (en) * | 2017-05-05 | 2020-03-24 | Kla-Tencor Corporation | Metrology guided inspection sample shaping of optical inspection results |
| US11222799B2 (en) * | 2017-10-18 | 2022-01-11 | Kla Corporation | Swath selection for semiconductor inspection |
| US11048163B2 (en) * | 2017-11-07 | 2021-06-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Inspection method of a photomask and an inspection system |
| US10572991B2 (en) * | 2017-11-07 | 2020-02-25 | Kla-Tencor Corporation | System and method for aligning semiconductor device reference images and test images |
| US11662669B2 (en) * | 2019-07-11 | 2023-05-30 | Asml Netherlands B.V. | Apparatus and method for measuring substrate height |
| US11442021B2 (en) | 2019-10-11 | 2022-09-13 | Kla Corporation | Broadband light interferometry for focal-map generation in photomask inspection |
| US11330164B2 (en) * | 2020-03-17 | 2022-05-10 | KLA Corp. | Determining focus settings for specimen scans |
| US12360058B2 (en) * | 2020-12-21 | 2025-07-15 | Kla Corporation | Integration of an optical height sensor in mask inspection tools |
| KR102860819B1 (ko) * | 2021-04-30 | 2025-09-17 | 지브이엠 주식회사 | 정초점 궤도를 추종할 수 있는 검사 카메라를 가진 부품 검사 장치 |
| US11815810B2 (en) * | 2021-09-22 | 2023-11-14 | Intel Corporation | Measurement tool and methods for EUV lithography masks |
| US12032298B2 (en) * | 2021-09-23 | 2024-07-09 | Intel Corporation | Measurement tool and method for lithography masks |
| CN115472545A (zh) * | 2022-08-11 | 2022-12-13 | 嘉兴景焱智能装备技术有限公司 | 晶圆检测预对准系统及方法 |
| WO2024127383A1 (en) * | 2022-12-14 | 2024-06-20 | Nova Ltd. | Image-based autofocus for metrology |
| JP2025022362A (ja) * | 2023-08-03 | 2025-02-14 | レーザーテック株式会社 | 検査方法及び検査装置 |
| US20250173880A1 (en) * | 2023-11-28 | 2025-05-29 | Kla Corporation | System and method for in-situ swath positioning |
| EP4575637A1 (en) * | 2023-12-20 | 2025-06-25 | ASML Netherlands B.V. | Method and apparatus for assessing a sample surface, method of scanning a sample surface, and charged particle assessment apparatus |
| WO2025131457A1 (en) * | 2023-12-20 | 2025-06-26 | Asml Netherlands B.V. | Method and apparatus for assessing a sample surface, method of scanning a sample surface, and charged particle assessment apparatus |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090009741A1 (en) * | 2006-03-07 | 2009-01-08 | Nikon Corporation | Device manufacturing method, device manufacturing system, and measurement/inspection apparatus |
| US20110280469A1 (en) * | 2010-05-17 | 2011-11-17 | Jeong Ho Lee | Run-Time Correction Of Defect Locations During Defect Review |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3615988B2 (ja) * | 2000-05-23 | 2005-02-02 | 株式会社東京精密 | 走査式顕微鏡の焦点補正方法及び走査式顕微鏡 |
| JP4642362B2 (ja) * | 2003-06-06 | 2011-03-02 | 株式会社荏原製作所 | 基板位置合わせ方法、基板表面検査方法、基板位置決め方法、半導体デバイス製造方法、基板位置合わせ装置及び基板表面検査装置 |
| JP2005195504A (ja) * | 2004-01-08 | 2005-07-21 | Ebara Corp | 試料の欠陥検査装置 |
| JP4959149B2 (ja) * | 2005-05-02 | 2012-06-20 | 株式会社荏原製作所 | 試料検査装置 |
| JP4606969B2 (ja) * | 2005-08-17 | 2011-01-05 | 株式会社日立ハイテクノロジーズ | 写像投影型電子線式検査装置及びその方法 |
| US7835015B1 (en) | 2007-03-05 | 2010-11-16 | Kla-Tencor Corporation | Auto focus system for reticle inspection |
| US7564545B2 (en) | 2007-03-15 | 2009-07-21 | Kla-Tencor Technologies Corp. | Inspection methods and systems for lithographic masks |
| JP5096852B2 (ja) | 2007-09-19 | 2012-12-12 | 株式会社日立国際電気 | 線幅測定装置および線幅測定装置の検査方法 |
| US8041106B2 (en) | 2008-12-05 | 2011-10-18 | Kla-Tencor Corp. | Methods and systems for detecting defects on a reticle |
| JP2010161216A (ja) | 2009-01-08 | 2010-07-22 | Toshiba Corp | パターン検査装置およびパターン検査方法 |
| JP2011009554A (ja) | 2009-06-26 | 2011-01-13 | Fujitsu Semiconductor Ltd | 欠陥検査方法及び欠陥検査装置 |
| JP5331828B2 (ja) * | 2011-01-14 | 2013-10-30 | 株式会社日立ハイテクノロジーズ | 荷電粒子線装置 |
-
2014
- 2014-07-21 US US14/336,875 patent/US9110039B2/en active Active
- 2014-07-23 EP EP14830094.0A patent/EP3025369B1/en active Active
- 2014-07-23 WO PCT/US2014/047880 patent/WO2015013445A1/en not_active Ceased
- 2014-07-23 KR KR1020167004716A patent/KR102102018B1/ko active Active
- 2014-07-23 JP JP2016529867A patent/JP6452694B2/ja active Active
- 2014-07-25 TW TW103125597A patent/TWI620259B/zh active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090009741A1 (en) * | 2006-03-07 | 2009-01-08 | Nikon Corporation | Device manufacturing method, device manufacturing system, and measurement/inspection apparatus |
| US20110280469A1 (en) * | 2010-05-17 | 2011-11-17 | Jeong Ho Lee | Run-Time Correction Of Defect Locations During Defect Review |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2015013445A1 (en) | 2015-01-29 |
| EP3025369A4 (en) | 2017-03-01 |
| JP6452694B2 (ja) | 2019-01-16 |
| KR102102018B1 (ko) | 2020-04-17 |
| TW201519344A (zh) | 2015-05-16 |
| EP3025369B1 (en) | 2021-04-07 |
| KR20160037192A (ko) | 2016-04-05 |
| EP3025369A1 (en) | 2016-06-01 |
| US9110039B2 (en) | 2015-08-18 |
| JP2016534550A (ja) | 2016-11-04 |
| US20150029499A1 (en) | 2015-01-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI620259B (zh) | 用於晶粒對晶粒之檢測之自動對焦系統及方法 | |
| TWI760437B (zh) | 檢測一光微影倍縮光罩之方法及系統,以及電腦可讀媒體 | |
| US7732761B2 (en) | Method for measuring a pattern dimension using a scanning electron microscope | |
| JP6043662B2 (ja) | 検査方法および検査装置 | |
| JP5832345B2 (ja) | 検査装置および検査方法 | |
| US7488924B2 (en) | Method for determining the focal position during imaging of a sample using an inclined position receiving device | |
| JP4426519B2 (ja) | 光学的高さ検出方法、電子線測定装置および電子線検査装置 | |
| CN106165078B (zh) | Δ裸片及δ数据库检验 | |
| KR101640914B1 (ko) | 초점 위치 조정 방법 및 검사 방법 | |
| US20150146967A1 (en) | Pattern evaluation device and pattern evaluation method | |
| CN112447542B (zh) | 半导体晶片检验方法及其系统 | |
| US20160091300A1 (en) | Method for characterizing a structure on a mask and device for carrying out said method | |
| WO2011040223A1 (ja) | 表面欠陥検査装置 | |
| TWI672569B (zh) | 監測來自度量衡裝置之照明特性的方法 | |
| CN118507374A (zh) | 用于晶圆扫描的焦面修正方法及晶圆检测方法 | |
| JP5112650B2 (ja) | チャックに対する光ビームの位置のドリフトを決定する方法およびシステム | |
| KR102721346B1 (ko) | 표본 상의 어레이 영역에서의 결함 검출 | |
| JP2012173028A (ja) | パターン形状計測方法及びその装置 | |
| JP6732680B2 (ja) | マップ作成方法、マスク検査方法およびマスク検査装置 | |
| CN115210560B (zh) | 确定用于样本扫描的焦点设置 | |
| KR102024112B1 (ko) | 검사 방법 | |
| JP2020204497A (ja) | 検査装置 |