KR102102018B1 - 다이별 검사를 위한 오토포커스 시스템 및 방법 - Google Patents

다이별 검사를 위한 오토포커스 시스템 및 방법 Download PDF

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Publication number
KR102102018B1
KR102102018B1 KR1020167004716A KR20167004716A KR102102018B1 KR 102102018 B1 KR102102018 B1 KR 102102018B1 KR 1020167004716 A KR1020167004716 A KR 1020167004716A KR 20167004716 A KR20167004716 A KR 20167004716A KR 102102018 B1 KR102102018 B1 KR 102102018B1
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South Korea
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swath
die
offset
corrected
focus
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Korean (ko)
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KR20160037192A (ko
Inventor
마이클 제이. 라이트
정청 린
윌프레드 엘. 곤살베스
다니엘 엘. 벨린
웨스톤 엘. 소우사
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케이엘에이 코포레이션
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/7065—Defects, e.g. optical inspection of patterned layer for defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G01N2021/95676—Masks, reticles, shadow masks

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Automatic Focus Adjustment (AREA)
  • Microscoopes, Condenser (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
KR1020167004716A 2013-07-25 2014-07-23 다이별 검사를 위한 오토포커스 시스템 및 방법 Active KR102102018B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201361858308P 2013-07-25 2013-07-25
US61/858,308 2013-07-25
US14/336,875 US9110039B2 (en) 2013-07-25 2014-07-21 Auto-focus system and methods for die-to-die inspection
US14/336,875 2014-07-21
PCT/US2014/047880 WO2015013445A1 (en) 2013-07-25 2014-07-23 Auto-focus system and methods for die-to-die inspection

Publications (2)

Publication Number Publication Date
KR20160037192A KR20160037192A (ko) 2016-04-05
KR102102018B1 true KR102102018B1 (ko) 2020-04-17

Family

ID=52390257

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020167004716A Active KR102102018B1 (ko) 2013-07-25 2014-07-23 다이별 검사를 위한 오토포커스 시스템 및 방법

Country Status (6)

Country Link
US (1) US9110039B2 (https=)
EP (1) EP3025369B1 (https=)
JP (1) JP6452694B2 (https=)
KR (1) KR102102018B1 (https=)
TW (1) TWI620259B (https=)
WO (1) WO2015013445A1 (https=)

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EP3086175B1 (en) 2015-04-22 2022-01-26 IMEC vzw Method for hotspot detection and ranking of a lithographic mask
JP6732680B2 (ja) * 2017-03-08 2020-07-29 株式会社ニューフレアテクノロジー マップ作成方法、マスク検査方法およびマスク検査装置
JP7079569B2 (ja) * 2017-04-21 2022-06-02 株式会社ニューフレアテクノロジー 検査方法
US10598617B2 (en) * 2017-05-05 2020-03-24 Kla-Tencor Corporation Metrology guided inspection sample shaping of optical inspection results
US11222799B2 (en) * 2017-10-18 2022-01-11 Kla Corporation Swath selection for semiconductor inspection
US11048163B2 (en) * 2017-11-07 2021-06-29 Taiwan Semiconductor Manufacturing Company, Ltd. Inspection method of a photomask and an inspection system
US10572991B2 (en) * 2017-11-07 2020-02-25 Kla-Tencor Corporation System and method for aligning semiconductor device reference images and test images
US11662669B2 (en) * 2019-07-11 2023-05-30 Asml Netherlands B.V. Apparatus and method for measuring substrate height
US11442021B2 (en) 2019-10-11 2022-09-13 Kla Corporation Broadband light interferometry for focal-map generation in photomask inspection
US11330164B2 (en) * 2020-03-17 2022-05-10 KLA Corp. Determining focus settings for specimen scans
US12360058B2 (en) * 2020-12-21 2025-07-15 Kla Corporation Integration of an optical height sensor in mask inspection tools
KR102860819B1 (ko) * 2021-04-30 2025-09-17 지브이엠 주식회사 정초점 궤도를 추종할 수 있는 검사 카메라를 가진 부품 검사 장치
US11815810B2 (en) * 2021-09-22 2023-11-14 Intel Corporation Measurement tool and methods for EUV lithography masks
US12032298B2 (en) * 2021-09-23 2024-07-09 Intel Corporation Measurement tool and method for lithography masks
CN115472545A (zh) * 2022-08-11 2022-12-13 嘉兴景焱智能装备技术有限公司 晶圆检测预对准系统及方法
WO2024127383A1 (en) * 2022-12-14 2024-06-20 Nova Ltd. Image-based autofocus for metrology
JP2025022362A (ja) * 2023-08-03 2025-02-14 レーザーテック株式会社 検査方法及び検査装置
US20250173880A1 (en) * 2023-11-28 2025-05-29 Kla Corporation System and method for in-situ swath positioning
EP4575637A1 (en) * 2023-12-20 2025-06-25 ASML Netherlands B.V. Method and apparatus for assessing a sample surface, method of scanning a sample surface, and charged particle assessment apparatus
WO2025131457A1 (en) * 2023-12-20 2025-06-26 Asml Netherlands B.V. Method and apparatus for assessing a sample surface, method of scanning a sample surface, and charged particle assessment apparatus

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JP2001330779A (ja) * 2000-05-23 2001-11-30 Tokyo Seimitsu Co Ltd 走査式顕微鏡の焦点補正方法及び走査式顕微鏡
JP2005017270A (ja) 2003-06-06 2005-01-20 Ebara Corp 欠陥検査方法及びデバイス製造方法
JP2007051902A (ja) 2005-08-17 2007-03-01 Hitachi High-Technologies Corp 写像投影型電子線式検査装置及びその方法
US20080226157A1 (en) 2007-03-15 2008-09-18 Kla-Tencor Technologies Corporation Inspection methods and systems for lithographic masks
US20090009741A1 (en) 2006-03-07 2009-01-08 Nikon Corporation Device manufacturing method, device manufacturing system, and measurement/inspection apparatus
WO2009037875A1 (ja) 2007-09-19 2009-03-26 Hitachi Kokusai Electric Inc. 線幅測定装置の検査方法
US20110280469A1 (en) 2010-05-17 2011-11-17 Jeong Ho Lee Run-Time Correction Of Defect Locations During Defect Review

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JP2005195504A (ja) * 2004-01-08 2005-07-21 Ebara Corp 試料の欠陥検査装置
JP4959149B2 (ja) * 2005-05-02 2012-06-20 株式会社荏原製作所 試料検査装置
US7835015B1 (en) 2007-03-05 2010-11-16 Kla-Tencor Corporation Auto focus system for reticle inspection
US8041106B2 (en) 2008-12-05 2011-10-18 Kla-Tencor Corp. Methods and systems for detecting defects on a reticle
JP2010161216A (ja) 2009-01-08 2010-07-22 Toshiba Corp パターン検査装置およびパターン検査方法
JP2011009554A (ja) 2009-06-26 2011-01-13 Fujitsu Semiconductor Ltd 欠陥検査方法及び欠陥検査装置
JP5331828B2 (ja) * 2011-01-14 2013-10-30 株式会社日立ハイテクノロジーズ 荷電粒子線装置

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001330779A (ja) * 2000-05-23 2001-11-30 Tokyo Seimitsu Co Ltd 走査式顕微鏡の焦点補正方法及び走査式顕微鏡
JP2005017270A (ja) 2003-06-06 2005-01-20 Ebara Corp 欠陥検査方法及びデバイス製造方法
JP2007051902A (ja) 2005-08-17 2007-03-01 Hitachi High-Technologies Corp 写像投影型電子線式検査装置及びその方法
US20090009741A1 (en) 2006-03-07 2009-01-08 Nikon Corporation Device manufacturing method, device manufacturing system, and measurement/inspection apparatus
US20080226157A1 (en) 2007-03-15 2008-09-18 Kla-Tencor Technologies Corporation Inspection methods and systems for lithographic masks
WO2009037875A1 (ja) 2007-09-19 2009-03-26 Hitachi Kokusai Electric Inc. 線幅測定装置の検査方法
US20110280469A1 (en) 2010-05-17 2011-11-17 Jeong Ho Lee Run-Time Correction Of Defect Locations During Defect Review

Also Published As

Publication number Publication date
WO2015013445A1 (en) 2015-01-29
EP3025369A4 (en) 2017-03-01
TWI620259B (zh) 2018-04-01
JP6452694B2 (ja) 2019-01-16
TW201519344A (zh) 2015-05-16
EP3025369B1 (en) 2021-04-07
KR20160037192A (ko) 2016-04-05
EP3025369A1 (en) 2016-06-01
US9110039B2 (en) 2015-08-18
JP2016534550A (ja) 2016-11-04
US20150029499A1 (en) 2015-01-29

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