TWI618820B - 自含有α胺基酸及雙環氧化物的反應產物的銅電鍍浴電鍍光致抗蝕劑限定的特徵之方法 - Google Patents
自含有α胺基酸及雙環氧化物的反應產物的銅電鍍浴電鍍光致抗蝕劑限定的特徵之方法 Download PDFInfo
- Publication number
- TWI618820B TWI618820B TW105123888A TW105123888A TWI618820B TW I618820 B TWI618820 B TW I618820B TW 105123888 A TW105123888 A TW 105123888A TW 105123888 A TW105123888 A TW 105123888A TW I618820 B TWI618820 B TW I618820B
- Authority
- TW
- Taiwan
- Prior art keywords
- copper
- photoresist
- electroplating
- substrate
- features
- Prior art date
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/02—Electroplating of selected surface areas
- C25D5/022—Electroplating of selected surface areas using masking means
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/38—Electroplating: Baths therefor from solutions of copper
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D303/00—Compounds containing three-membered rings having one oxygen atom as the only ring hetero atom
- C07D303/02—Compounds containing oxirane rings
- C07D303/04—Compounds containing oxirane rings containing only hydrogen and carbon atoms in addition to the ring oxygen atoms
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
- C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/11—Printed elements for providing electric connections to or between printed circuits
- H05K1/111—Pads for surface mounting, e.g. lay-out
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
- H05K3/061—Etching masks
- H05K3/064—Photoresists
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/4007—Surface contacts, e.g. bumps
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
- H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
- H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
- H10P76/2041—Photolithographic processes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09209—Shape and layout details of conductors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/01—Manufacture or treatment
- H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/01—Manufacture or treatment
- H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
- H10W72/01251—Changing the shapes of bumps
- H10W72/01255—Changing the shapes of bumps by using masks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/01—Manufacture or treatment
- H10W72/019—Manufacture or treatment of bond pads
- H10W72/01931—Manufacture or treatment of bond pads using blanket deposition
- H10W72/01933—Manufacture or treatment of bond pads using blanket deposition in liquid form, e.g. spin coating, spray coating or immersion coating
- H10W72/01935—Manufacture or treatment of bond pads using blanket deposition in liquid form, e.g. spin coating, spray coating or immersion coating by plating, e.g. electroless plating or electroplating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/01—Manufacture or treatment
- H10W72/019—Manufacture or treatment of bond pads
- H10W72/01951—Changing the shapes of bond pads
- H10W72/01955—Changing the shapes of bond pads by using masks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W72/231—Shapes
- H10W72/232—Plan-view shape, i.e. in top view
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W72/251—Materials
- H10W72/252—Materials comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/921—Structures or relative sizes of bond pads
- H10W72/923—Bond pads having multiple stacked layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/931—Shapes of bond pads
- H10W72/932—Plan-view shape, i.e. in top view
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Electroplating And Plating Baths Therefor (AREA)
- Electroplating Methods And Accessories (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201562201860P | 2015-08-06 | 2015-08-06 | |
| US62/201,860 | 2015-08-06 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201715087A TW201715087A (zh) | 2017-05-01 |
| TWI618820B true TWI618820B (zh) | 2018-03-21 |
Family
ID=56567497
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW105123888A TWI618820B (zh) | 2015-08-06 | 2016-07-28 | 自含有α胺基酸及雙環氧化物的反應產物的銅電鍍浴電鍍光致抗蝕劑限定的特徵之方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US9932684B2 (https=) |
| EP (1) | EP3128043B1 (https=) |
| JP (1) | JP6322672B2 (https=) |
| KR (1) | KR101799857B1 (https=) |
| CN (1) | CN106435661B (https=) |
| TW (1) | TWI618820B (https=) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI608132B (zh) * | 2015-08-06 | 2017-12-11 | 羅門哈斯電子材料有限公司 | 自含有吡啶基烷基胺及雙環氧化物之反應產物的銅電鍍覆浴液電鍍覆光阻劑限定之特徵的方法 |
| US10190228B2 (en) * | 2016-03-29 | 2019-01-29 | Rohm And Haas Electronic Materials Llc | Copper electroplating baths and electroplating methods capable of electroplating megasized photoresist defined features |
| US10508349B2 (en) * | 2016-06-27 | 2019-12-17 | Rohm And Haas Electronic Materials Llc | Method of electroplating photoresist defined features from copper electroplating baths containing reaction products of pyrazole compounds and bisepoxides |
| US10711360B2 (en) * | 2017-07-14 | 2020-07-14 | Rohm And Haas Electronic Materials Llc | Nickel electroplating compositions with copolymers of arginine and bisepoxides and methods of electroplating nickel |
| US20190259722A1 (en) * | 2018-02-21 | 2019-08-22 | Rohm And Haas Electronic Materials Llc | Copper pillars having improved integrity and methods of making the same |
| CN111108235B (zh) * | 2018-08-28 | 2022-05-03 | 株式会社杰希优 | 电镀铜浴 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120043654A1 (en) * | 2010-08-19 | 2012-02-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Mechanisms for forming copper pillar bumps using patterned anodes |
| US20130313011A1 (en) * | 2012-05-24 | 2013-11-28 | Unimicron Technology Corp. | Interposed substrate and manufacturing method thereof |
Family Cites Families (34)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4356277A (en) * | 1977-03-08 | 1982-10-26 | Ppg Industries, Inc. | Reaction products of a polyglycidyl ether of a polyphenol and an amino acid and aqueous solubilized products therefrom |
| JPH0997791A (ja) | 1995-09-27 | 1997-04-08 | Internatl Business Mach Corp <Ibm> | バンプ構造、バンプの形成方法、実装接続体 |
| JP2000119233A (ja) * | 1998-08-12 | 2000-04-25 | Ajinomoto Co Inc | 新規ポリアミノ酸誘導体 |
| BR0007669A (pt) | 1999-01-21 | 2001-11-06 | Ciba Sc Holding Ag | Polìmeros ou oligÈmeros de aminoácido substituìdo por perfluoroalquila e seu uso como estabilizadores de espuma em agentes de espuma de combate ao fogo e como papel repelente de óleo e acabamentos têxteis |
| US6578754B1 (en) | 2000-04-27 | 2003-06-17 | Advanpack Solutions Pte. Ltd. | Pillar connections for semiconductor chips and method of manufacture |
| US6610192B1 (en) | 2000-11-02 | 2003-08-26 | Shipley Company, L.L.C. | Copper electroplating |
| JP4392168B2 (ja) | 2001-05-09 | 2009-12-24 | 荏原ユージライト株式会社 | 銅めっき浴およびこれを用いる基板のめっき方法 |
| JP4809546B2 (ja) | 2001-06-07 | 2011-11-09 | 石原薬品株式会社 | 有機溶媒を用いたボイドフリー銅メッキ方法 |
| CN1410601A (zh) * | 2001-09-27 | 2003-04-16 | 长春石油化学股份有限公司 | 用于铜集成电路内连线的铜电镀液组合物 |
| JP2003171464A (ja) * | 2001-12-06 | 2003-06-20 | Chisso Corp | ポリリジン及びその製造方法 |
| US7128822B2 (en) | 2003-06-04 | 2006-10-31 | Shipley Company, L.L.C. | Leveler compounds |
| US7276801B2 (en) | 2003-09-22 | 2007-10-02 | Intel Corporation | Designs and methods for conductive bumps |
| US7462942B2 (en) | 2003-10-09 | 2008-12-09 | Advanpack Solutions Pte Ltd | Die pillar structures and a method of their formation |
| JP2005272874A (ja) * | 2004-03-23 | 2005-10-06 | Sumitomo Bakelite Co Ltd | 回路基板の製造方法 |
| TW200613586A (en) | 2004-07-22 | 2006-05-01 | Rohm & Haas Elect Mat | Leveler compounds |
| EP1741804B1 (en) * | 2005-07-08 | 2016-04-27 | Rohm and Haas Electronic Materials, L.L.C. | Electrolytic copper plating method |
| US7662981B2 (en) * | 2005-07-16 | 2010-02-16 | Rohm And Haas Electronic Materials Llc | Leveler compounds |
| US7829380B2 (en) | 2006-10-31 | 2010-11-09 | Qimonda Ag | Solder pillar bumping and a method of making the same |
| JP2008291287A (ja) | 2007-05-22 | 2008-12-04 | Nippon New Chrome Kk | 耐連続衝撃性に優れた銅−錫合金めっき製品の製造方法 |
| EP2199315B1 (en) | 2008-12-19 | 2013-12-11 | Basf Se | Composition for metal electroplating comprising leveling agent |
| US8262894B2 (en) | 2009-04-30 | 2012-09-11 | Moses Lake Industries, Inc. | High speed copper plating bath |
| US8592995B2 (en) | 2009-07-02 | 2013-11-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and structure for adhesion of intermetallic compound (IMC) on Cu pillar bump |
| JP5471276B2 (ja) | 2009-10-15 | 2014-04-16 | 上村工業株式会社 | 電気銅めっき浴及び電気銅めっき方法 |
| EP2504396B1 (en) | 2009-11-27 | 2021-02-24 | Basf Se | Composition for copper electroplating comprising leveling agent |
| US8268157B2 (en) | 2010-03-15 | 2012-09-18 | Rohm And Haas Electronic Materials Llc | Plating bath and method |
| EP2547731B1 (en) | 2010-03-18 | 2014-07-30 | Basf Se | Composition for metal electroplating comprising leveling agent |
| SG185736A1 (en) | 2010-06-01 | 2012-12-28 | Basf Se | Composition for metal electroplating comprising leveling agent |
| EP2465976B1 (en) * | 2010-12-15 | 2013-04-03 | Rohm and Haas Electronic Materials LLC | Method of electroplating uniform copper layer on the edge and walls of though holes of a substrate. |
| US8669137B2 (en) | 2011-04-01 | 2014-03-11 | International Business Machines Corporation | Copper post solder bumps on substrate |
| US8454815B2 (en) | 2011-10-24 | 2013-06-04 | Rohm And Haas Electronics Materials Llc | Plating bath and method |
| US10204876B2 (en) | 2013-03-07 | 2019-02-12 | Maxim Integrated Products, Inc. | Pad defined contact for wafer level package |
| US8957524B2 (en) | 2013-03-15 | 2015-02-17 | Globalfoundries Inc. | Pillar structure for use in packaging integrated circuit products and methods of making such a pillar structure |
| TWI608132B (zh) * | 2015-08-06 | 2017-12-11 | 羅門哈斯電子材料有限公司 | 自含有吡啶基烷基胺及雙環氧化物之反應產物的銅電鍍覆浴液電鍍覆光阻劑限定之特徵的方法 |
| US10006136B2 (en) * | 2015-08-06 | 2018-06-26 | Dow Global Technologies Llc | Method of electroplating photoresist defined features from copper electroplating baths containing reaction products of imidazole compounds, bisepoxides and halobenzyl compounds |
-
2016
- 2016-07-27 US US15/220,472 patent/US9932684B2/en active Active
- 2016-07-28 TW TW105123888A patent/TWI618820B/zh active
- 2016-07-29 CN CN201610619284.1A patent/CN106435661B/zh active Active
- 2016-07-29 JP JP2016150558A patent/JP6322672B2/ja active Active
- 2016-07-31 KR KR1020160097686A patent/KR101799857B1/ko active Active
- 2016-08-02 EP EP16182479.2A patent/EP3128043B1/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120043654A1 (en) * | 2010-08-19 | 2012-02-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Mechanisms for forming copper pillar bumps using patterned anodes |
| US20130313011A1 (en) * | 2012-05-24 | 2013-11-28 | Unimicron Technology Corp. | Interposed substrate and manufacturing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| EP3128043B1 (en) | 2018-04-11 |
| CN106435661A (zh) | 2017-02-22 |
| JP6322672B2 (ja) | 2018-05-09 |
| CN106435661B (zh) | 2019-02-19 |
| KR101799857B1 (ko) | 2017-11-22 |
| EP3128043A1 (en) | 2017-02-08 |
| US20170037527A1 (en) | 2017-02-09 |
| JP2017036501A (ja) | 2017-02-16 |
| KR20170017738A (ko) | 2017-02-15 |
| TW201715087A (zh) | 2017-05-01 |
| US9932684B2 (en) | 2018-04-03 |
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