TWI613508B - 光罩、光罩之設計方法、光罩基底、及顯示裝置之製造方法 - Google Patents

光罩、光罩之設計方法、光罩基底、及顯示裝置之製造方法 Download PDF

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Publication number
TWI613508B
TWI613508B TW105115076A TW105115076A TWI613508B TW I613508 B TWI613508 B TW I613508B TW 105115076 A TW105115076 A TW 105115076A TW 105115076 A TW105115076 A TW 105115076A TW I613508 B TWI613508 B TW I613508B
Authority
TW
Taiwan
Prior art keywords
phase shift
photomask
rays
film
shift film
Prior art date
Application number
TW105115076A
Other languages
English (en)
Chinese (zh)
Other versions
TW201704846A (zh
Inventor
小林周平
Original Assignee
Ｈｏｙａ股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ｈｏｙａ股份有限公司 filed Critical Ｈｏｙａ股份有限公司
Publication of TW201704846A publication Critical patent/TW201704846A/zh
Application granted granted Critical
Publication of TWI613508B publication Critical patent/TWI613508B/zh

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/66—Containers specially adapted for masks, mask blanks or pellicles; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment

Landscapes

  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
TW105115076A 2015-06-30 2016-05-16 光罩、光罩之設計方法、光罩基底、及顯示裝置之製造方法 TWI613508B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015130976A JP6767735B2 (ja) 2015-06-30 2015-06-30 フォトマスク、フォトマスクの設計方法、フォトマスクブランク、および表示装置の製造方法
JP2015-130976 2015-06-30

Publications (2)

Publication Number Publication Date
TW201704846A TW201704846A (zh) 2017-02-01
TWI613508B true TWI613508B (zh) 2018-02-01

Family

ID=57725184

Family Applications (1)

Application Number Title Priority Date Filing Date
TW105115076A TWI613508B (zh) 2015-06-30 2016-05-16 光罩、光罩之設計方法、光罩基底、及顯示裝置之製造方法

Country Status (4)

Country Link
JP (1) JP6767735B2 (ja)
KR (1) KR101898327B1 (ja)
CN (3) CN106324977B (ja)
TW (1) TWI613508B (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7080070B2 (ja) * 2017-03-24 2022-06-03 Hoya株式会社 フォトマスク、及び表示装置の製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012194554A (ja) * 2011-03-03 2012-10-11 Hoya Corp フォトマスク、パターン転写方法、及びペリクル
TW201319727A (zh) * 2011-09-30 2013-05-16 Hoya Corp 多色調光罩、多色調光罩之製造方法、圖案轉印方法及薄膜電晶體之製造方法
CN104656370A (zh) * 2013-11-25 2015-05-27 Hoya株式会社 光掩模的制造方法、光掩模和图案转印方法

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US5674647A (en) * 1992-11-21 1997-10-07 Ulvac Coating Corporation Phase shift mask and manufacturing method thereof and exposure method using phase shift mask
TWI422961B (zh) * 2007-07-19 2014-01-11 Hoya Corp 光罩及其製造方法、圖案轉印方法、以及顯示裝置之製造方法
JP5588633B2 (ja) * 2009-06-30 2014-09-10 アルバック成膜株式会社 位相シフトマスクの製造方法、フラットパネルディスプレイの製造方法及び位相シフトマスク
JP5409238B2 (ja) * 2009-09-29 2014-02-05 Ｈｏｙａ株式会社 フォトマスク、フォトマスクの製造方法、パターン転写方法及び表示装置用画素電極の製造方法
JP2011215197A (ja) * 2010-03-31 2011-10-27 Hoya Corp フォトマスク及びその製造方法
KR101151685B1 (ko) 2011-04-22 2012-07-20 주식회사 에스앤에스텍 블랭크 마스크 및 포토마스크
KR20130067332A (ko) * 2011-11-16 2013-06-24 삼성디스플레이 주식회사 노광용 마스크 및 그 마스크를 사용한 기판 제조 방법
JP6139826B2 (ja) * 2012-05-02 2017-05-31 Hoya株式会社 フォトマスク、パターン転写方法、及びフラットパネルディスプレイの製造方法
JP6093117B2 (ja) * 2012-06-01 2017-03-08 Hoya株式会社 フォトマスク、フォトマスクの製造方法及びパターンの転写方法
JP6063650B2 (ja) * 2012-06-18 2017-01-18 Hoya株式会社 フォトマスクの製造方法
KR101282040B1 (ko) * 2012-07-26 2013-07-04 주식회사 에스앤에스텍 플랫 패널 디스플레이용 위상반전 블랭크 마스크 및 포토 마스크
JP5635577B2 (ja) * 2012-09-26 2014-12-03 Hoya株式会社 フォトマスクの製造方法、フォトマスク、パターン転写方法、及びフラットパネルディスプレイの製造方法
JP6154132B2 (ja) * 2012-12-27 2017-06-28 アルバック成膜株式会社 位相シフトマスクの製造方法、位相シフトマスク
KR102168151B1 (ko) * 2012-12-27 2020-10-20 알박 세이마쿠 가부시키가이샤 위상 시프트 마스크 및 그의 제조방법
KR101403391B1 (ko) * 2013-05-06 2014-06-03 주식회사 피케이엘 하프톤 위상반전마스크를 이용한 복합파장 노광 방법 및 이에 이용되는 하프톤 위상반전마스크
JP2015049282A (ja) * 2013-08-30 2015-03-16 Hoya株式会社 表示装置製造用フォトマスク、該フォトマスクの製造方法、パターン転写方法及び表示装置の製造方法
JP6266322B2 (ja) * 2013-11-22 2018-01-24 Hoya株式会社 表示装置製造用の位相シフトマスクブランク、表示装置製造用の位相シフトマスク及びその製造方法、並びに表示装置の製造方法
JP6722421B2 (ja) * 2014-04-04 2020-07-15 大日本印刷株式会社 位相シフトマスクおよびその製造方法

Patent Citations (3)

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Publication number Priority date Publication date Assignee Title
JP2012194554A (ja) * 2011-03-03 2012-10-11 Hoya Corp フォトマスク、パターン転写方法、及びペリクル
TW201319727A (zh) * 2011-09-30 2013-05-16 Hoya Corp 多色調光罩、多色調光罩之製造方法、圖案轉印方法及薄膜電晶體之製造方法
CN104656370A (zh) * 2013-11-25 2015-05-27 Hoya株式会社 光掩模的制造方法、光掩模和图案转印方法

Also Published As

Publication number Publication date
CN110262182A (zh) 2019-09-20
CN106324977A (zh) 2017-01-11
CN112987484B (zh) 2024-09-10
CN112987484A (zh) 2021-06-18
TW201704846A (zh) 2017-02-01
KR20170003412A (ko) 2017-01-09
KR101898327B1 (ko) 2018-09-12
JP6767735B2 (ja) 2020-10-14
CN106324977B (zh) 2023-05-12
CN110262182B (zh) 2023-05-26
JP2017015863A (ja) 2017-01-19

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