CN106324977B - 光掩模、光掩模的设计方法、光掩模坯料和显示装置的制造方法 - Google Patents
光掩模、光掩模的设计方法、光掩模坯料和显示装置的制造方法 Download PDFInfo
- Publication number
- CN106324977B CN106324977B CN201610423251.XA CN201610423251A CN106324977B CN 106324977 B CN106324977 B CN 106324977B CN 201610423251 A CN201610423251 A CN 201610423251A CN 106324977 B CN106324977 B CN 106324977B
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- China
- Prior art keywords
- phase shift
- photomask
- line
- film
- pattern
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/66—Containers specially adapted for masks, mask blanks or pellicles; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
- G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
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- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Inorganic Chemistry (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202110223505.4A CN112987484A (zh) | 2015-06-30 | 2016-06-15 | 光掩模、光掩模的设计方法、光掩模坯料和显示装置的制造方法 |
CN201910485133.5A CN110262182B (zh) | 2015-06-30 | 2016-06-15 | 光掩模、光掩模的设计方法、光掩模坯料和显示装置的制造方法 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015-130976 | 2015-06-30 | ||
JP2015130976A JP6767735B2 (ja) | 2015-06-30 | 2015-06-30 | フォトマスク、フォトマスクの設計方法、フォトマスクブランク、および表示装置の製造方法 |
Related Child Applications (2)
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CN201910485133.5A Division CN110262182B (zh) | 2015-06-30 | 2016-06-15 | 光掩模、光掩模的设计方法、光掩模坯料和显示装置的制造方法 |
CN202110223505.4A Division CN112987484A (zh) | 2015-06-30 | 2016-06-15 | 光掩模、光掩模的设计方法、光掩模坯料和显示装置的制造方法 |
Publications (2)
Publication Number | Publication Date |
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CN106324977A CN106324977A (zh) | 2017-01-11 |
CN106324977B true CN106324977B (zh) | 2023-05-12 |
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Family Applications (3)
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CN201910485133.5A Active CN110262182B (zh) | 2015-06-30 | 2016-06-15 | 光掩模、光掩模的设计方法、光掩模坯料和显示装置的制造方法 |
CN202110223505.4A Pending CN112987484A (zh) | 2015-06-30 | 2016-06-15 | 光掩模、光掩模的设计方法、光掩模坯料和显示装置的制造方法 |
CN201610423251.XA Active CN106324977B (zh) | 2015-06-30 | 2016-06-15 | 光掩模、光掩模的设计方法、光掩模坯料和显示装置的制造方法 |
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CN201910485133.5A Active CN110262182B (zh) | 2015-06-30 | 2016-06-15 | 光掩模、光掩模的设计方法、光掩模坯料和显示装置的制造方法 |
CN202110223505.4A Pending CN112987484A (zh) | 2015-06-30 | 2016-06-15 | 光掩模、光掩模的设计方法、光掩模坯料和显示装置的制造方法 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP6767735B2 (ja) |
KR (1) | KR101898327B1 (ja) |
CN (3) | CN110262182B (ja) |
TW (1) | TWI613508B (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7080070B2 (ja) * | 2017-03-24 | 2022-06-03 | Hoya株式会社 | フォトマスク、及び表示装置の製造方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1174613A (zh) * | 1995-10-24 | 1998-02-25 | 阿尔贝克成膜株式会社 | 移相掩模及其制造方法 |
CN101937170A (zh) * | 2009-06-30 | 2011-01-05 | 爱发科成膜株式会社 | 相移掩膜的制造方法、平板显示器的制造方法和相移掩膜 |
JP2012230379A (ja) * | 2011-04-22 | 2012-11-22 | S&S Tech Corp | ブランクマスク及びフォトマスク |
CN103576441A (zh) * | 2012-07-26 | 2014-02-12 | S&S技术股份有限公司 | 用于平板显示器的相移掩模坯件和光掩模 |
JP2014126835A (ja) * | 2012-12-27 | 2014-07-07 | Ulvac Seimaku Kk | 位相シフトマスクの製造方法、位相シフトマスク |
CN104737072A (zh) * | 2012-12-27 | 2015-06-24 | 爱发科成膜株式会社 | 相移掩膜及其制造方法 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI422961B (zh) * | 2007-07-19 | 2014-01-11 | Hoya Corp | 光罩及其製造方法、圖案轉印方法、以及顯示裝置之製造方法 |
JP5409238B2 (ja) * | 2009-09-29 | 2014-02-05 | Hoya株式会社 | フォトマスク、フォトマスクの製造方法、パターン転写方法及び表示装置用画素電極の製造方法 |
JP2011215197A (ja) * | 2010-03-31 | 2011-10-27 | Hoya Corp | フォトマスク及びその製造方法 |
TWI461839B (zh) * | 2011-03-03 | 2014-11-21 | Hoya Corp | 光罩及其製造方法、圖案轉印方法及護膜 |
JP6076593B2 (ja) * | 2011-09-30 | 2017-02-08 | Hoya株式会社 | 表示装置製造用多階調フォトマスク、表示装置製造用多階調フォトマスクの製造方法、パターン転写方法及び薄膜トランジスタの製造方法 |
KR20130067332A (ko) * | 2011-11-16 | 2013-06-24 | 삼성디스플레이 주식회사 | 노광용 마스크 및 그 마스크를 사용한 기판 제조 방법 |
JP6139826B2 (ja) * | 2012-05-02 | 2017-05-31 | Hoya株式会社 | フォトマスク、パターン転写方法、及びフラットパネルディスプレイの製造方法 |
JP6093117B2 (ja) * | 2012-06-01 | 2017-03-08 | Hoya株式会社 | フォトマスク、フォトマスクの製造方法及びパターンの転写方法 |
JP6063650B2 (ja) * | 2012-06-18 | 2017-01-18 | Hoya株式会社 | フォトマスクの製造方法 |
JP5635577B2 (ja) * | 2012-09-26 | 2014-12-03 | Hoya株式会社 | フォトマスクの製造方法、フォトマスク、パターン転写方法、及びフラットパネルディスプレイの製造方法 |
KR101403391B1 (ko) * | 2013-05-06 | 2014-06-03 | 주식회사 피케이엘 | 하프톤 위상반전마스크를 이용한 복합파장 노광 방법 및 이에 이용되는 하프톤 위상반전마스크 |
JP2015049282A (ja) * | 2013-08-30 | 2015-03-16 | Hoya株式会社 | 表示装置製造用フォトマスク、該フォトマスクの製造方法、パターン転写方法及び表示装置の製造方法 |
JP6266322B2 (ja) * | 2013-11-22 | 2018-01-24 | Hoya株式会社 | 表示装置製造用の位相シフトマスクブランク、表示装置製造用の位相シフトマスク及びその製造方法、並びに表示装置の製造方法 |
JP6106579B2 (ja) * | 2013-11-25 | 2017-04-05 | Hoya株式会社 | フォトマスクの製造方法、フォトマスク及びパターン転写方法 |
JP6722421B2 (ja) * | 2014-04-04 | 2020-07-15 | 大日本印刷株式会社 | 位相シフトマスクおよびその製造方法 |
-
2015
- 2015-06-30 JP JP2015130976A patent/JP6767735B2/ja active Active
-
2016
- 2016-05-16 TW TW105115076A patent/TWI613508B/zh active
- 2016-06-15 CN CN201910485133.5A patent/CN110262182B/zh active Active
- 2016-06-15 CN CN202110223505.4A patent/CN112987484A/zh active Pending
- 2016-06-15 CN CN201610423251.XA patent/CN106324977B/zh active Active
- 2016-06-23 KR KR1020160078594A patent/KR101898327B1/ko active IP Right Grant
Patent Citations (6)
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CN1174613A (zh) * | 1995-10-24 | 1998-02-25 | 阿尔贝克成膜株式会社 | 移相掩模及其制造方法 |
CN101937170A (zh) * | 2009-06-30 | 2011-01-05 | 爱发科成膜株式会社 | 相移掩膜的制造方法、平板显示器的制造方法和相移掩膜 |
JP2012230379A (ja) * | 2011-04-22 | 2012-11-22 | S&S Tech Corp | ブランクマスク及びフォトマスク |
CN103576441A (zh) * | 2012-07-26 | 2014-02-12 | S&S技术股份有限公司 | 用于平板显示器的相移掩模坯件和光掩模 |
JP2014126835A (ja) * | 2012-12-27 | 2014-07-07 | Ulvac Seimaku Kk | 位相シフトマスクの製造方法、位相シフトマスク |
CN104737072A (zh) * | 2012-12-27 | 2015-06-24 | 爱发科成膜株式会社 | 相移掩膜及其制造方法 |
Also Published As
Publication number | Publication date |
---|---|
TWI613508B (zh) | 2018-02-01 |
CN110262182B (zh) | 2023-05-26 |
JP2017015863A (ja) | 2017-01-19 |
KR101898327B1 (ko) | 2018-09-12 |
CN112987484A (zh) | 2021-06-18 |
JP6767735B2 (ja) | 2020-10-14 |
TW201704846A (zh) | 2017-02-01 |
CN110262182A (zh) | 2019-09-20 |
CN106324977A (zh) | 2017-01-11 |
KR20170003412A (ko) | 2017-01-09 |
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