CN106324977B - 光掩模、光掩模的设计方法、光掩模坯料和显示装置的制造方法 - Google Patents

光掩模、光掩模的设计方法、光掩模坯料和显示装置的制造方法 Download PDF

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Publication number
CN106324977B
CN106324977B CN201610423251.XA CN201610423251A CN106324977B CN 106324977 B CN106324977 B CN 106324977B CN 201610423251 A CN201610423251 A CN 201610423251A CN 106324977 B CN106324977 B CN 106324977B
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Prior art keywords
phase shift
photomask
line
film
pattern
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CN106324977A (zh
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小林周平
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Hoya Corp
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Hoya Corp
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Priority to CN202110223505.4A priority Critical patent/CN112987484A/zh
Priority to CN201910485133.5A priority patent/CN110262182B/zh
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/66—Containers specially adapted for masks, mask blanks or pellicles; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment

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  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
CN201610423251.XA 2015-06-30 2016-06-15 光掩模、光掩模的设计方法、光掩模坯料和显示装置的制造方法 Active CN106324977B (zh)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN202110223505.4A CN112987484A (zh) 2015-06-30 2016-06-15 光掩模、光掩模的设计方法、光掩模坯料和显示装置的制造方法
CN201910485133.5A CN110262182B (zh) 2015-06-30 2016-06-15 光掩模、光掩模的设计方法、光掩模坯料和显示装置的制造方法

Applications Claiming Priority (2)

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JP2015-130976 2015-06-30
JP2015130976A JP6767735B2 (ja) 2015-06-30 2015-06-30 フォトマスク、フォトマスクの設計方法、フォトマスクブランク、および表示装置の製造方法

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CN201910485133.5A Division CN110262182B (zh) 2015-06-30 2016-06-15 光掩模、光掩模的设计方法、光掩模坯料和显示装置的制造方法
CN202110223505.4A Division CN112987484A (zh) 2015-06-30 2016-06-15 光掩模、光掩模的设计方法、光掩模坯料和显示装置的制造方法

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CN106324977A CN106324977A (zh) 2017-01-11
CN106324977B true CN106324977B (zh) 2023-05-12

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CN202110223505.4A Pending CN112987484A (zh) 2015-06-30 2016-06-15 光掩模、光掩模的设计方法、光掩模坯料和显示装置的制造方法
CN201610423251.XA Active CN106324977B (zh) 2015-06-30 2016-06-15 光掩模、光掩模的设计方法、光掩模坯料和显示装置的制造方法

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CN202110223505.4A Pending CN112987484A (zh) 2015-06-30 2016-06-15 光掩模、光掩模的设计方法、光掩模坯料和显示装置的制造方法

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JP (1) JP6767735B2 (ja)
KR (1) KR101898327B1 (ja)
CN (3) CN110262182B (ja)
TW (1) TWI613508B (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7080070B2 (ja) * 2017-03-24 2022-06-03 Hoya株式会社 フォトマスク、及び表示装置の製造方法

Citations (6)

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CN1174613A (zh) * 1995-10-24 1998-02-25 阿尔贝克成膜株式会社 移相掩模及其制造方法
CN101937170A (zh) * 2009-06-30 2011-01-05 爱发科成膜株式会社 相移掩膜的制造方法、平板显示器的制造方法和相移掩膜
JP2012230379A (ja) * 2011-04-22 2012-11-22 S&S Tech Corp ブランクマスク及びフォトマスク
CN103576441A (zh) * 2012-07-26 2014-02-12 S&S技术股份有限公司 用于平板显示器的相移掩模坯件和光掩模
JP2014126835A (ja) * 2012-12-27 2014-07-07 Ulvac Seimaku Kk 位相シフトマスクの製造方法、位相シフトマスク
CN104737072A (zh) * 2012-12-27 2015-06-24 爱发科成膜株式会社 相移掩膜及其制造方法

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TWI422961B (zh) * 2007-07-19 2014-01-11 Hoya Corp 光罩及其製造方法、圖案轉印方法、以及顯示裝置之製造方法
JP5409238B2 (ja) * 2009-09-29 2014-02-05 Ｈｏｙａ株式会社 フォトマスク、フォトマスクの製造方法、パターン転写方法及び表示装置用画素電極の製造方法
JP2011215197A (ja) * 2010-03-31 2011-10-27 Hoya Corp フォトマスク及びその製造方法
TWI461839B (zh) * 2011-03-03 2014-11-21 Hoya Corp 光罩及其製造方法、圖案轉印方法及護膜
JP6076593B2 (ja) * 2011-09-30 2017-02-08 Hoya株式会社 表示装置製造用多階調フォトマスク、表示装置製造用多階調フォトマスクの製造方法、パターン転写方法及び薄膜トランジスタの製造方法
KR20130067332A (ko) * 2011-11-16 2013-06-24 삼성디스플레이 주식회사 노광용 마스크 및 그 마스크를 사용한 기판 제조 방법
JP6139826B2 (ja) * 2012-05-02 2017-05-31 Hoya株式会社 フォトマスク、パターン転写方法、及びフラットパネルディスプレイの製造方法
JP6093117B2 (ja) * 2012-06-01 2017-03-08 Hoya株式会社 フォトマスク、フォトマスクの製造方法及びパターンの転写方法
JP6063650B2 (ja) * 2012-06-18 2017-01-18 Hoya株式会社 フォトマスクの製造方法
JP5635577B2 (ja) * 2012-09-26 2014-12-03 Hoya株式会社 フォトマスクの製造方法、フォトマスク、パターン転写方法、及びフラットパネルディスプレイの製造方法
KR101403391B1 (ko) * 2013-05-06 2014-06-03 주식회사 피케이엘 하프톤 위상반전마스크를 이용한 복합파장 노광 방법 및 이에 이용되는 하프톤 위상반전마스크
JP2015049282A (ja) * 2013-08-30 2015-03-16 Hoya株式会社 表示装置製造用フォトマスク、該フォトマスクの製造方法、パターン転写方法及び表示装置の製造方法
JP6266322B2 (ja) * 2013-11-22 2018-01-24 Hoya株式会社 表示装置製造用の位相シフトマスクブランク、表示装置製造用の位相シフトマスク及びその製造方法、並びに表示装置の製造方法
JP6106579B2 (ja) * 2013-11-25 2017-04-05 Hoya株式会社 フォトマスクの製造方法、フォトマスク及びパターン転写方法
JP6722421B2 (ja) * 2014-04-04 2020-07-15 大日本印刷株式会社 位相シフトマスクおよびその製造方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1174613A (zh) * 1995-10-24 1998-02-25 阿尔贝克成膜株式会社 移相掩模及其制造方法
CN101937170A (zh) * 2009-06-30 2011-01-05 爱发科成膜株式会社 相移掩膜的制造方法、平板显示器的制造方法和相移掩膜
JP2012230379A (ja) * 2011-04-22 2012-11-22 S&S Tech Corp ブランクマスク及びフォトマスク
CN103576441A (zh) * 2012-07-26 2014-02-12 S&S技术股份有限公司 用于平板显示器的相移掩模坯件和光掩模
JP2014126835A (ja) * 2012-12-27 2014-07-07 Ulvac Seimaku Kk 位相シフトマスクの製造方法、位相シフトマスク
CN104737072A (zh) * 2012-12-27 2015-06-24 爱发科成膜株式会社 相移掩膜及其制造方法

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Publication number Publication date
TWI613508B (zh) 2018-02-01
CN110262182B (zh) 2023-05-26
JP2017015863A (ja) 2017-01-19
KR101898327B1 (ko) 2018-09-12
CN112987484A (zh) 2021-06-18
JP6767735B2 (ja) 2020-10-14
TW201704846A (zh) 2017-02-01
CN110262182A (zh) 2019-09-20
CN106324977A (zh) 2017-01-11
KR20170003412A (ko) 2017-01-09

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