TWI607535B - 重配置線路結構及其製作方法 - Google Patents
重配置線路結構及其製作方法 Download PDFInfo
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- TWI607535B TWI607535B TW105138518A TW105138518A TWI607535B TW I607535 B TWI607535 B TW I607535B TW 105138518 A TW105138518 A TW 105138518A TW 105138518 A TW105138518 A TW 105138518A TW I607535 B TWI607535 B TW I607535B
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- layer
- insulating layer
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- opening
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Links
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Manufacturing Of Printed Wiring (AREA)
Description
本發明是有關於一種線路結構及其製作方法,且特別是有關於一種重配置線路結構及其製作方法。
在高度情報化社會的今日,多媒體應用的市場不斷地急速擴張著。積體電路封裝技術亦需配合電子裝置的數位化、網路化、區域連接化以及使用人性化的趨勢發展。為達成上述的要求,必須強化電子元件的高速處理化、多功能化、積集化、小型輕量化及低價化等多方面的要求,於是積體電路封裝技術也跟著朝向微型化、高密度化發展。所謂積體電路封裝密度所指的是單位面積所含有腳位(pin)數目多寡的程度。對於高密度積體電路封裝而言,縮短積體電路與封裝基材間配線的長度,將有助訊號傳遞速度的提昇,是以藉由凸塊(bump)作為訊號傳遞之覆晶封裝技術已漸成為高密度封裝的主流。
覆晶晶片(flip chip)上的焊墊則通常是以陣列方式(array type)排列,覆晶晶片的焊墊位置未必對應於基板上的接墊位置,目前通常會透過重配置線路層將基板上的接墊位置進行重配置,使其成為覆晶晶片的焊墊之陣列分佈的型態。如此一來,覆晶晶片的焊墊便能夠透過凸塊與重配置線路層電性連接於基板上的接墊。
由於目前重配置線路層的導線寬度越來越小,為了使導線具有一定的電阻值,通常採用的方式是增加了導線的高度,以使導線的截面積維持一定。這也使得導線的剖面呈現出高且窄的形狀。然而,細窄型的導線縮減了其附著於下方基板或是其附著於基板上的絕緣層的面積,容易傾倒而造成剝離(peeling)的狀況。
本發明提供一種重配置線路結構,其不易剝離(peeling),而具有較佳的結構穩定度。
本發明提供一種重配置線路結構的製作方法,其可製作出上述的重配置線路結構。
本發明的一種重配置線路結構,配置於一基材上,基材具有一接墊與一保護層,其中保護層具有一第一開口,且第一開口暴露出部分的接墊,重配置線路結構包括一第一圖案化絕緣層、一重配置線路層及一第二圖案化絕緣層。第一圖案化絕緣層配置於保護層上且包括一第二開口及至少一凸出部,其中第二開口對應於第一開口以暴露部分的接墊,至少一凸出部朝遠離於保護層的方向凸出。重配置線路層配置於第一圖案化絕緣層上且包括一接墊部及一導線部,其中接墊部位於第一圖案化絕緣層上,導線部包括一本體及凹陷於本體的至少一凹槽,導線部位於第一圖案化絕緣層上從接墊部延伸至第一開口與第二開口內,以與接墊連接,至少一凸出部伸入至少一凹槽,且本體包覆至少一凸出部。第二圖案化絕緣層設置於第一圖案化絕緣層上,第二圖案化絕緣層覆蓋導線部且暴露部分的接墊部。
在本發明的一實施例中,上述的至少一凸出部包括一條狀凸出部或是分離的多個樁狀凸出部,至少一凹槽包括一條狀凹溝或是分離的多個凹槽。
在本發明的一實施例中,上述的至少一凹槽的內輪廓形狀對應於凸出部的外輪廓形狀,且至少一凸出部的數量與位置對應於至少一凹槽的數量與位置。
在本發明的一實施例中,上述的各凸出部的寬度沿著遠離保護層的方向漸縮、漸擴或不變。
在本發明的一實施例中,上述的各凸出部的寬度小於本體的寬度。
在本發明的一實施例中,上述的導線部的本體在沿著導線部的延伸方向上包括交替相連的多個放大區及多個連接區,這些放大區的寬度分別大於這些連接區的寬度,這些放大區的形狀包括圓形、橢圓形、矩形、菱形或不規則形。
在本發明的一實施例中,上述的重配置線路結構更包括一球底金屬(Under Bump Metallurgic,UBM)層,配置於重配置線路層下方,並位於重配置線路層與第一圖案化絕緣層之間以及重配置線路層與接墊之間。
在本發明的一實施例中,上述的重配置線路結構更包括一圖案化金屬複合層,配置於重配置線路層上,圖案化金屬複合層的寬度大於重配置線路層的寬度。
本發明的一種重配置線路結構的製作方法,包括:提供一基材,其中基材具有一接墊與一保護層,保護層具有一第一開口,且第一開口暴露出部分的接墊;形成一第一絕緣層於保護層上;對第一絕緣層進行兩次圖案化程序,以形成一第一圖案化絕緣層,其中第一圖案化絕緣層包括一第二開口及至少一凸出部,第二開口對應於第一開口以暴露部分的接墊,至少一凸出部朝遠離於保護層的方向凸出;形成一重配置線路層於第一圖案化絕緣層上,其中重配置線路層包括一接墊部及一導線部,接墊部位於第一圖案化絕緣層上,導線部包括一本體及凹陷於本體的至少一凹槽,本體位於第一圖案化絕緣層上從接墊部延伸至第一開口與第二開口內,以與接墊連接,至少一凸出部伸入至少一凹槽,且本體包覆至少一凸出部;以及形成一第二圖案化絕緣層於第一圖案化絕緣層上且覆蓋導線部以及接墊部的周圍,第二圖案化絕緣層並暴露部分接墊部。
在本發明的一實施例中,上述的重配置線路結構的製作方法,更包括在形成重配置線路層之前,形成一球底金屬層於第一圖案化絕緣層上,球底金屬層覆蓋接墊及部分的第一圖案化絕緣層。
基於上述,本發明的重配置線路結構藉由在第一圖案化絕緣層設有凸出部,且重配置線路層的導線部包括本體及凹陷於本體的凹槽,第一圖案化絕緣層的凸出部伸入導線部的凹槽可有效增加第一圖案化絕緣層與重配置線路層的導線部之間的附著面積,以降低重配置線路層的導線部剝離(peeling)於第一圖案化絕緣層的機率,而使得重配置線路層的導線部在基材上具有較佳的結構穩定度。
為讓本發明的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。
圖1A是依照本發明的一實施例的一種重配置線路結構的局部剖面示意圖。請先參閱圖1A,本實施例的重配置線路結構100適於配置於一基材10上,以將基材10的接墊12重配置到其他位置。在本實施例中,基材10可以是線路板晶圓或晶片,基材10的種類並不以上述為限制。如圖1A所示,基材10具有一接墊12與一保護層14,其中保護層14具有一第一開口16,且第一開口16暴露出部分的接墊12。
重配置線路結構100包括一第一圖案化絕緣層110、一重配置線路層130及一第二圖案化絕緣層150。第一圖案化絕緣層110配置於保護層14上且包括一第二開口112,其中第二開口112對應於第一開口16以暴露部分的接墊12。
重配置線路層130配置於第一圖案化絕緣層110上且包括一接墊部131及一導線部132。如圖1A所示,導線部132從左方的接墊部131向右延伸至第一開口16與第二開口112內,以與接墊12連接。在本實施例中,基材10上的接墊12可以透過導線部132重配置到接墊部131的位置,以方便後續與其他線路結構(未繪示)連接。重配置線路層130的材料包括銅,但不以此為限制。
一般來說,導線的電阻值與其截面積相關,截面積越大,電阻值越低。由於目前的線路朝細線化的方向發展,在習知的重配置線路層中,會透過增加導線的高度來彌補降低導線的寬度所造成的電阻值變化,但此設計使得導線的剖面呈現出高且窄的形狀,而縮減了導線與其下方基材的附著面積,容易發生傾倒或剝離的狀況。本實施例的重配置線路結構100藉由下述的設計可以有效地降低重配置線路層130發生傾倒或剝離的狀況。
圖1B是圖1A的重配置線路結構的沿A-A線段且隱藏基材與第二圖案化絕緣層的剖面示意圖。圖1C是圖1A的重配置線路結構的重配置線路層的俯視示意圖。請同時參閱圖1A至圖1C,在本實施例中,第一圖案化絕緣層110還包括至少一凸出部114。凸出部114朝遠離於保護層14的方向(也就是圖1B的上方)凸出。
如圖1B所示,導線部132包括一本體133及凹陷於本體133的至少一凹槽136,在本實施例中,凸出部114為單一個條狀的凸出部,凹槽136為單一個條狀的凹槽,凸出部114的位置對應於凹槽136的位置,凸出部114的外輪廓形狀對應於凹槽136的內輪廓形狀。第一圖案化絕緣層110的凸出部114伸入且填滿於導線部132的凹槽136。
在本實施例中,重配置線路結構100藉由在第一圖案化絕緣層110形成凸出部114,且重配置線路層130的導線部132包括凹陷於本體133的凹槽136,第一圖案化絕緣層110的凸出部114會伸入重配置線路層130的導線部132的凹槽136來增加第一圖案化絕緣層110與重配置線路層130的導線部132之間的附著面積。此設計使得導線部132與下方的第一圖案化絕緣層110的附著狀態從習知的平面變成了立體的結構。由於導線部132與下方的第一圖案化絕緣層110的附著面積增加,重配置線路層130的導線部132剝離(peeling)於第一圖案化絕緣層110的機率有效地被降低,而使得重配置線路層130的導線部132在基材10上具有較佳的結構穩定度。並且,此設計也可以讓細線寬的導線部132不需為了降低電阻值而刻意提高導線部132的高度(厚度)。
此外,在本實施例中,重配置線路結構100還包括一球底金屬層120與一圖案化金屬複合層140。球底金屬層120配置於重配置線路層130下方,並位於重配置線路層130與第一圖案化絕緣層110之間以及重配置線路層130與接墊12之間,以作為第一圖案化絕緣層110與設置於其上之重配置線路層130之間及接墊12與設置於其上之重配置線路層130之間的接合媒介,進而增加第一圖案化絕緣層110與重配置線路層130之間及接墊12與重配置線路層130之間的接合性。球底金屬層120包括黏著層(adhesive layer)、阻障層(barrier layer)以及沾錫層(wetting layer)等複合金屬層。
圖案化金屬複合層140配置於重配置線路層130上。如圖1B所示,圖案化金屬複合層140的寬度W3大於重配置線路層130的本體133的寬度W2,且本體133的寬度W2大於凸出部114的寬度W1。在本實施例中,圖案化金屬複合層140以配置在重配置線路層130上的一鎳層與配置在鎳層上的一金層為例,但圖案化金屬複合層140的種類並不以此為限制。
第二圖案化絕緣層150設置於第一圖案化絕緣層110與重配置線路層130上方。如圖1A所示,第二圖案化絕緣層150覆蓋導線部132且未遮蔽部分的接墊部131。一未繪示的凸塊可以透過接墊部131上方的圖案化金屬複合層140連接於接墊部131。
圖1D是依照本發明的一實施例的一種重配置線路結構的製作方法的步驟示意圖。本實施例的重配置線路結構的製作方法200可製作出如圖1A所示的重配置線路結構100,請同時參考圖1A與圖1D,本實施例的重配置線路結構的製作方法200包括下列步驟。
首先,步驟210,提供一基材10,其中基材10具有一接墊12與一保護層14,保護層14具有一第一開口16,且第一開口16暴露出部分的接墊12。基材10可以是線路板或晶片,基材10的種類並不以上述為限制。在本實施例中,接墊12的材料例如為鋁。保護層14的材料可以包括氧化矽、氮氧化矽、氮化矽、有機材料、聚合物或其組合。有機材料例如是苯並環丁烯(BCB)。聚合物例如是聚醯亞胺(PI)。保護層14可以以化學氣相沉積法或是塗佈法來形成,但並不以此為限。
接著,步驟220,形成一第一絕緣層於保護層14上。第一絕緣層的材料可以包括氧化矽、氮氧化矽、氮化矽、有機材料、聚合物或其組合。有機材料例如是苯並環丁烯(BCB)。聚合物例如是聚醯亞胺(PI)。第一絕緣層可以以化學氣相沉積法或是塗佈法來形成,但本發明並不以此為限。此外,第一絕緣層的材料可以相同於或是不同於保護層14。
再來,步驟230,對第一絕緣層進行兩次圖案化程序,以形成一第一圖案化絕緣層110,其中第一圖案化絕緣層110包括一第二開口112及至少一凸出部114,第二開口112對應於第一開口16以暴露部分的接墊12,至少一凸出部114朝遠離於保護層14的方向凸出。在步驟230中,利用正型光阻的曝光顯影後會被移除的特性,在第一絕緣層上進行兩次圖案化程序以製作出比第一圖案化絕緣層110的其他部位較厚的凸出部114與貫穿第一圖案化絕緣層110的第二開口112。
接著,步驟240,形成一球底金屬層120於第一圖案化絕緣層110上,球底金屬層120覆蓋接墊12及部分的第一圖案化絕緣層110。在本實施例中,形成球底金屬層120於第一圖案化絕緣層110120上的方法包括濺鍍。球底金屬層120包括黏著層(adhesive layer)、阻障層(barrier layer)以及沾錫層(wetting layer)等複合金屬層。
再來,步驟250,形成一重配置線路層130於第一圖案化絕緣層110上,其中重配置線路層130包括一接墊部131及一導線部132,接墊部131位於第一圖案化絕緣層110上,導線部132包括一本體133及凹陷於本體133的至少一凹槽136,本體133位於第一圖案化絕緣層110上從接墊部131延伸至第一開口16與第二開口112內,以與接墊12連接,至少一凸出部114伸入至少一凹槽136,且本體133包覆至少一凸出部114。
在本實施例中,於第一圖案化絕緣層110上形成重配置線路層130的方式是透過電鍍,但形成重配置線路層130的方式並不以此為限制。此外,在本實施例中,重配置線路層130的材料包括銅,但重配置線路層130的材料也可以是其他金屬,並不以此為限制。其後可在重配置線路層130上形成一圖案化金屬複合層140,圖案化金屬複合層140可包括一鎳層與配置在鎳層上的一金層,但圖案化金屬複合層140的種類並不以此為限制。
最後,步驟260,形成一第二圖案化絕緣層150於第一圖案化絕緣層110上且覆蓋導線部132以及接墊部131的周圍,第二圖案化絕緣層150並暴露部分的接墊部131及圖案化金屬複合層140位在接墊部131上的部分。在本實施例中,第二圖案化絕緣層150的材料可以包括氧化矽、氮氧化矽、氮化矽、有機材料、聚合物或其組合。有機材料例如是苯並環丁烯(BCB)。聚合物例如是聚醯亞胺(PI)。第二圖案化絕緣層150可以透過先以化學氣相沉積法或是塗佈法來形成絕緣層再對絕緣層曝光顯影而成,但本發明並不以此為限。
藉由上述的製造方法可以製作出如圖1A至圖1C所示地不易剝離的重配置線路層130,而具有較佳的結構穩定度。當然,重配置線路結構的形式並不以此為限制,下面將介紹其他形式的重配置線路結構。需說明的是,在下面這些實施例中,與前一實施例相同或相似的元件以相同或相似的符號表示,不再多加贅述。
圖2至圖3分別是依照本發明的其他實施例的多種重配置線路結構隱藏第二圖案化絕緣層的剖面示意圖。請先參閱圖2,圖2的重配置線路結構100a與圖1B的重配置線路結構100的主要差異在於,在圖1B中,第一圖案化絕緣層110的凸出部114b的寬度在沿著遠離保護層14的方向上(也就是不同高度處)原則上是相同的,且重配置線路層130的導線部132的凹槽136的寬度沿著遠離保護層14的方向原則上是相同的。也就是說,在圖1B中,凸出部114基本上是呈現矩形柱狀。
在圖2中,第一圖案化絕緣層110的凸出部114a的寬度隨遠離保護層14的方向呈漸縮,且重配置線路層的導線部的本體133的凹槽136a的寬度沿著遠離保護層14的方向呈漸縮。也就是說,在圖2中,凸出部114a基本上是呈現三角柱狀。
在圖3的重配置線路結構100b中,第一圖案化絕緣層110的凸出部114b的寬度隨遠離保護層14的方向呈漸擴,且重配置線路層的導線部的本體133的凹槽136b的寬度沿著遠離保護層14的方向呈漸擴。也就是說,在圖3中,凸出部114a基本上是呈現梯形柱狀。當然,上面僅是舉出其中數種凸出部114、114a、114b的形狀,凸出部並不以上述為限制。
圖4A是依照本發明的一實施例的一種重配置線路結構的局部剖面示意圖。圖4B是圖4A的重配置線路結構的重配置線路層的俯視示意圖。請參閱圖4A與圖4B,本實施例的重配置線路結構100c與圖1A的重配置線路結構100的主要差異在,在本實施例中,第一圖案化絕緣層110包括多個分離的樁狀凸出部114c,重配置線路層130c的導線部132c包括分離的多個凹槽136c。凸出部114c的數量與位置對應於凹槽136c的數量與位置。當然,凹槽136c與凸出部114c的形狀與數量並不以圖面為限。
本實施例的重配置線路結構100c藉由第一圖案化絕緣層110的這些凸出部114c與導線部132c的這些凹槽136c的搭配來增加導線部132c與第一圖案化絕緣層110之間的附著面積,同樣地也可以使導線部132c剝離(peeling)於第一圖案化絕緣層110的機率有效地被降低,而使得重配置線路層130c的導線部132c在基材10上具有較佳的結構穩定度。
圖5至圖8分別是依照本發明的其他實施例的多種重配置線路結構的導線部的本體的俯視示意圖。請先參閱圖5,圖1C的本體133與圖5的本體133d的主要差異在於,在圖1C中,導線部132的本體133在沿著導線部132的延伸方向(圖面的左右方向)上呈現等寬。在本實施例中,本體133d在沿著導線部的延伸方向上包括交替相連的多個放大區134d及多個連接區135d,連接區135d的寬度可以約接近圖1C的導線部132的本體133的寬度,而這些放大區134d的寬度分別大於這些連接區135d的寬度。
換句話說,在本實施例中,由於本體133d具有這些放大區134d,本體133d與下方的第一圖案化絕緣層110(繪示於圖1B)之間會具有更大的附著面積,因此,導線部剝離於第一圖案化絕緣層110的機率可被降低。在圖5中,這些放大區134d的形狀為矩形,但放大區134d的形狀並不以此為限制。
請參閱圖6至圖8,圖6至圖8的這些本體133e、133f、133g與圖5的本體133d的主要差異在:在圖6中,這些放大區134e的形狀為圓形。在圖7中,這些放大區134f的形狀為橢圓形。在圖8中,這些放大區134g的形狀為菱形。在其他實施例中,放大區的形狀也可以是不規則形,只要放大區的寬度大於連接區的寬度即可,放大區的形狀並不以上述為限制。
此外,需說明的是,圖5至圖8僅是示意性地繪示出導線部的本體133d、133e、133f、133g的俯視形狀,上述本體133d、133e、133f、133g的凹槽可以是如圖1C所示的單一個條狀的凹槽136或是如圖4B所示的多個凹槽136c或是其他形式的凹槽,上述的這些本體133d、133e、133f、133g可分別與不同形式的凹槽136、136c搭配。
換句話說,若採用圖5至圖8所示的重配置線路層,由於導線部的本體133d、133e、133f、133g除了連接區135d、135e、135f、135g之外還具有寬度更大的放大區134d、133e、133f、133g,因此,除了如前述實施例中提到的透過第一圖案化絕緣層的凸出部114、114c伸入凹槽136、136c來增加附著面積之外,本體133d、133e、133f、133g與第一圖案化絕緣層之間的附著面積也會增加,而使得重配置線路層的導線部在基材上具有較佳的結構穩定度。
圖9是依照本發明的其他實施例的一種重配置線路結構隱藏第二圖案化絕緣層的剖面示意圖。請參閱圖9,圖9與圖1B的差異在於,在圖1B中,圖案化金屬複合層140配置於重配置線路層130上,也就是說,重配置線路層130與圖案化金屬複合層140是銅/鎳/金的疊層。在圖9中,重配置線路結構100h沒有圖案化金屬複合層140配置於重配置線路層130上,也就是說,在圖9中,只有例如是銅的本體133凸出於第一圖案化絕緣層110上。
綜上所述,本發明的重配置線路結構藉由在第一圖案化絕緣層設有凸出部,且重配置線路層的導線部包括本體及凹陷於本體的凹槽,第一圖案化絕緣層的凸出部伸入導線部的凹槽可有效增加第一圖案化絕緣層與重配置線路層的導線部之間的附著面積,以降低重配置線路層的導線部剝離(peeling)於第一圖案化絕緣層的機率,而使得重配置線路層的導線部在基材上具有較佳的結構穩定度。
雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明的精神和範圍內,當可作些許的更動與潤飾,故本發明的保護範圍當視後附的申請專利範圍所界定者為準。
W1、W2、W3‧‧‧寬度
10‧‧‧基材
12‧‧‧接墊
14‧‧‧保護層
16‧‧‧第一開口
100、100a、100b、100c、100h‧‧‧重配置線路結構
110、110a、110b‧‧‧第一圖案化絕緣層
112‧‧‧第二開口
114、114a、114b、114c‧‧‧凸出部
120‧‧‧球底金屬層
130、130c‧‧‧重配置線路層
131‧‧‧接墊部
132、132c‧‧‧導線部
133、133b、133d、133e、133f、133g‧‧‧本體
134d、134e、134f、134g‧‧‧放大區
135d、135e、135f、135g‧‧‧連接區
136、136a、136b、136c‧‧‧凹槽
140‧‧‧圖案化金屬複合層
150‧‧‧第二圖案化絕緣層
圖1A是依照本發明的一實施例的一種重配置線路結構的剖面示意圖。 圖1B是圖1A的重配置線路結構的沿A-A線段且隱藏基材與第二圖案化絕緣層的剖面示意圖。 圖1C是圖1A的重配置線路結構的重配置線路層的俯視示意圖。 圖1D是依照本發明的一實施例的一種重配置線路結構的製作方法的步驟示意圖。 圖2至圖3分別是依照本發明的其他實施例的多種重配置線路結構隱藏第二圖案化絕緣層的剖面示意圖。 圖4A是依照本發明的一實施例的一種重配置線路結構的剖面示意圖。 圖4B是圖4A的重配置線路結構的重配置線路層的俯視示意圖。 圖5至圖8分別是依照本發明的其他實施例的多種重配置線路結構的導線部的本體的俯視示意圖。 圖9是依照本發明的其他實施例的一種重配置線路結構隱藏第二圖案化絕緣層的剖面示意圖。
W1、W2、W3‧‧‧寬度
14‧‧‧保護層
100‧‧‧重配置線路結構
110‧‧‧第一圖案化絕緣層
114‧‧‧凸出部
120‧‧‧球底金屬層
132‧‧‧導線部
133‧‧‧本體
136‧‧‧凹槽
140‧‧‧圖案化金屬複合層
Claims (9)
- 一種重配置線路結構,配置於一基材上,該基材具有一接墊與一保護層,其中該保護層具有一第一開口,且該第一開口暴露出部分的該接墊,該重配置線路結構包括:一第一圖案化絕緣層,配置於該保護層上且包括一第二開口及至少一凸出部,其中該第二開口對應於該第一開口以暴露部分的該接墊,該至少一凸出部朝遠離於該保護層的方向凸出;一重配置線路層,配置於該第一圖案化絕緣層上且包括一接墊部及一導線部,其中該接墊部位於該第一圖案化絕緣層上,該導線部包括一本體及凹陷於該本體的至少一凹槽,該導線部位於該第一圖案化絕緣層上從該接墊部延伸至該第一開口與該第二開口內,以與該接墊連接,該至少一凸出部伸入該至少一凹槽,且該本體包覆該至少一凸出部,其中各該凸出部的寬度小於該本體的寬度;以及一第二圖案化絕緣層,設置於該第一圖案化絕緣層上,該第二圖案化絕緣層覆蓋該導線部且暴露部分的該接墊部。
- 如申請專利範圍第1項所述的重配置線路結構,其中該至少一凸出部包括一條狀凸出部或是分離的多個樁狀凸出部,該至少一凹槽包括一條狀凹溝或是分離的多個凹槽。
- 如申請專利範圍第1項所述的重配置線路結構,其中該至少一凹槽的內輪廓形狀對應於該凸出部的外輪廓形狀,且該至少一凸出部的數量與位置對應於該至少一凹槽的數量與位置。
- 如申請專利範圍第1項所述的重配置線路結構,其中各該凸出部的寬度沿著遠離該保護層的方向漸縮、漸擴或不變。
- 如申請專利範圍第1項所述的重配置線路結構,其中該導線部的該本體在沿著該導線部的延伸方向上包括交替相連的多個放大區及多個連接區,該些放大區的寬度分別大於該些連接區的寬度,該些放大區的形狀包括圓形、橢圓形、矩形、菱形或不規則形。
- 如申請專利範圍第1項所述的重配置線路結構,更包括:一球底金屬(Under Bump Metallurgic,UBM)層,配置於該重配置線路層下方,並位於該重配置線路層與該第一圖案化絕緣層之間以及該重配置線路層與該接墊之間。
- 如申請專利範圍第1項所述的重配置線路結構,更包括:一圖案化金屬複合層,配置於該重配置線路層上,該圖案化金屬複合層的寬度大於該重配置線路層的寬度。
- 一種重配置線路結構的製作方法,包括:提供一基材,其中該基材具有一接墊與一保護層,該保護層具有一第一開口,且該第一開口暴露出部分的該接墊;形成一第一絕緣層於該保護層上;對該第一絕緣層進行兩次圖案化程序,以形成一第一圖案化絕緣層,其中該第一圖案化絕緣層包括一第二開口及至少一凸 出部,該第二開口對應於該第一開口以暴露部分的該接墊,該至少一凸出部朝遠離於該保護層的方向凸出;形成一重配置線路層於該第一圖案化絕緣層上,其中該重配置線路層包括一接墊部及一導線部,該接墊部位於該第一圖案化絕緣層上,該導線部包括一本體及凹陷於該本體的至少一凹槽,該本體位於該第一圖案化絕緣層上從該接墊部延伸至該第一開口與該第二開口內,以與該接墊連接,該至少一凸出部伸入該至少一凹槽,且該本體包覆該至少一凸出部,其中各該凸出部的寬度小於該本體的寬度;以及形成一第二圖案化絕緣層於該第一圖案化絕緣層上且覆蓋該導線部以及該接墊部的周圍,該第二圖案化絕緣層並暴露部分該接墊部。
- 如申請專利範圍第8項所述的重配置線路結構的製作方法,更包括:在形成該重配置線路層之前,形成一球底金屬層於該第一圖案化絕緣層上,該球底金屬層覆蓋該接墊及部分的該第一圖案化絕緣層。
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