TWI606514B - 電漿處理方法及電漿處理裝置 - Google Patents

電漿處理方法及電漿處理裝置 Download PDF

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Publication number
TWI606514B
TWI606514B TW103105352A TW103105352A TWI606514B TW I606514 B TWI606514 B TW I606514B TW 103105352 A TW103105352 A TW 103105352A TW 103105352 A TW103105352 A TW 103105352A TW I606514 B TWI606514 B TW I606514B
Authority
TW
Taiwan
Prior art keywords
processed
plasma
film
processing
frequency
Prior art date
Application number
TW103105352A
Other languages
English (en)
Chinese (zh)
Other versions
TW201443994A (zh
Inventor
浦川理史
Original Assignee
東京威力科創股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 東京威力科創股份有限公司 filed Critical 東京威力科創股份有限公司
Publication of TW201443994A publication Critical patent/TW201443994A/zh
Application granted granted Critical
Publication of TWI606514B publication Critical patent/TWI606514B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H05H1/4645—Radiofrequency discharges
    • H10P50/242—

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
TW103105352A 2013-02-18 2014-02-18 電漿處理方法及電漿處理裝置 TWI606514B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013029298 2013-02-18
JP2014027549A JP6267989B2 (ja) 2013-02-18 2014-02-17 プラズマ処理方法及び容量結合型プラズマ処理装置

Publications (2)

Publication Number Publication Date
TW201443994A TW201443994A (zh) 2014-11-16
TWI606514B true TWI606514B (zh) 2017-11-21

Family

ID=51699207

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103105352A TWI606514B (zh) 2013-02-18 2014-02-18 電漿處理方法及電漿處理裝置

Country Status (3)

Country Link
JP (1) JP6267989B2 (enExample)
KR (1) KR102181419B1 (enExample)
TW (1) TWI606514B (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6449674B2 (ja) * 2015-02-23 2019-01-09 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
US11640905B2 (en) * 2020-12-17 2023-05-02 Applied Materials, Inc. Plasma enhanced deposition of silicon-containing films at low temperature

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3531511B2 (ja) * 1998-12-22 2004-05-31 株式会社日立製作所 プラズマ処理装置
JP2001085394A (ja) * 1999-09-10 2001-03-30 Hitachi Ltd 表面処理方法および表面処理装置
US6399507B1 (en) * 1999-09-22 2002-06-04 Applied Materials, Inc. Stable plasma process for etching of films
CA2529794A1 (en) * 2003-06-19 2004-12-29 Plasma Control Systems Llc Plasma production device and method and rf driver circuit with adjustable duty cycle
JP5192209B2 (ja) * 2006-10-06 2013-05-08 東京エレクトロン株式会社 プラズマエッチング装置、プラズマエッチング方法およびコンピュータ読取可能な記憶媒体
US7786019B2 (en) * 2006-12-18 2010-08-31 Applied Materials, Inc. Multi-step photomask etching with chlorine for uniformity control
JP5029089B2 (ja) 2007-03-26 2012-09-19 東京エレクトロン株式会社 プラズマ処理装置用の載置台及びプラズマ処理装置
JP2009277770A (ja) * 2008-05-13 2009-11-26 Toshiba Corp 不揮発性半導体記憶装置及びその製造方法
JP2010118549A (ja) * 2008-11-13 2010-05-27 Tokyo Electron Ltd プラズマエッチング方法及びプラズマエッチング装置
US8658541B2 (en) * 2010-01-15 2014-02-25 Applied Materials, Inc. Method of controlling trench microloading using plasma pulsing
JP5840973B2 (ja) * 2011-03-03 2016-01-06 東京エレクトロン株式会社 半導体装置の製造方法及びコンピュータ記録媒体
JP5893864B2 (ja) * 2011-08-02 2016-03-23 東京エレクトロン株式会社 プラズマエッチング方法

Also Published As

Publication number Publication date
TW201443994A (zh) 2014-11-16
KR20140103871A (ko) 2014-08-27
JP2014179598A (ja) 2014-09-25
JP6267989B2 (ja) 2018-01-24
KR102181419B1 (ko) 2020-11-23

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