JP6267989B2 - プラズマ処理方法及び容量結合型プラズマ処理装置 - Google Patents

プラズマ処理方法及び容量結合型プラズマ処理装置 Download PDF

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Publication number
JP6267989B2
JP6267989B2 JP2014027549A JP2014027549A JP6267989B2 JP 6267989 B2 JP6267989 B2 JP 6267989B2 JP 2014027549 A JP2014027549 A JP 2014027549A JP 2014027549 A JP2014027549 A JP 2014027549A JP 6267989 B2 JP6267989 B2 JP 6267989B2
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plasma
processed
processing
film
power
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JP2014027549A
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Japanese (ja)
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JP2014179598A (ja
JP2014179598A5 (enExample
Inventor
理史 浦川
理史 浦川
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to JP2014027549A priority Critical patent/JP6267989B2/ja
Priority to KR1020140018594A priority patent/KR102181419B1/ko
Priority to TW103105352A priority patent/TWI606514B/zh
Priority to US14/182,707 priority patent/US9653316B2/en
Publication of JP2014179598A publication Critical patent/JP2014179598A/ja
Publication of JP2014179598A5 publication Critical patent/JP2014179598A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H05H1/4645—Radiofrequency discharges
    • H10P50/242—

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
JP2014027549A 2013-02-18 2014-02-17 プラズマ処理方法及び容量結合型プラズマ処理装置 Active JP6267989B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2014027549A JP6267989B2 (ja) 2013-02-18 2014-02-17 プラズマ処理方法及び容量結合型プラズマ処理装置
KR1020140018594A KR102181419B1 (ko) 2013-02-18 2014-02-18 플라즈마 처리 방법 및 플라즈마 처리 장치
TW103105352A TWI606514B (zh) 2013-02-18 2014-02-18 電漿處理方法及電漿處理裝置
US14/182,707 US9653316B2 (en) 2013-02-18 2014-02-18 Plasma processing method and plasma processing apparatus

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2013029298 2013-02-18
JP2013029298 2013-02-18
JP2014027549A JP6267989B2 (ja) 2013-02-18 2014-02-17 プラズマ処理方法及び容量結合型プラズマ処理装置

Publications (3)

Publication Number Publication Date
JP2014179598A JP2014179598A (ja) 2014-09-25
JP2014179598A5 JP2014179598A5 (enExample) 2016-12-22
JP6267989B2 true JP6267989B2 (ja) 2018-01-24

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JP2014027549A Active JP6267989B2 (ja) 2013-02-18 2014-02-17 プラズマ処理方法及び容量結合型プラズマ処理装置

Country Status (3)

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JP (1) JP6267989B2 (enExample)
KR (1) KR102181419B1 (enExample)
TW (1) TWI606514B (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6449674B2 (ja) * 2015-02-23 2019-01-09 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
US11640905B2 (en) * 2020-12-17 2023-05-02 Applied Materials, Inc. Plasma enhanced deposition of silicon-containing films at low temperature

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3531511B2 (ja) * 1998-12-22 2004-05-31 株式会社日立製作所 プラズマ処理装置
JP2001085394A (ja) * 1999-09-10 2001-03-30 Hitachi Ltd 表面処理方法および表面処理装置
US6399507B1 (en) * 1999-09-22 2002-06-04 Applied Materials, Inc. Stable plasma process for etching of films
CA2529794A1 (en) * 2003-06-19 2004-12-29 Plasma Control Systems Llc Plasma production device and method and rf driver circuit with adjustable duty cycle
JP5192209B2 (ja) * 2006-10-06 2013-05-08 東京エレクトロン株式会社 プラズマエッチング装置、プラズマエッチング方法およびコンピュータ読取可能な記憶媒体
US7786019B2 (en) * 2006-12-18 2010-08-31 Applied Materials, Inc. Multi-step photomask etching with chlorine for uniformity control
JP5029089B2 (ja) 2007-03-26 2012-09-19 東京エレクトロン株式会社 プラズマ処理装置用の載置台及びプラズマ処理装置
JP2009277770A (ja) * 2008-05-13 2009-11-26 Toshiba Corp 不揮発性半導体記憶装置及びその製造方法
JP2010118549A (ja) * 2008-11-13 2010-05-27 Tokyo Electron Ltd プラズマエッチング方法及びプラズマエッチング装置
US8658541B2 (en) * 2010-01-15 2014-02-25 Applied Materials, Inc. Method of controlling trench microloading using plasma pulsing
JP5840973B2 (ja) * 2011-03-03 2016-01-06 東京エレクトロン株式会社 半導体装置の製造方法及びコンピュータ記録媒体
JP5893864B2 (ja) * 2011-08-02 2016-03-23 東京エレクトロン株式会社 プラズマエッチング方法

Also Published As

Publication number Publication date
TW201443994A (zh) 2014-11-16
KR20140103871A (ko) 2014-08-27
JP2014179598A (ja) 2014-09-25
KR102181419B1 (ko) 2020-11-23
TWI606514B (zh) 2017-11-21

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