TWI600785B - 沉積製程同步化之方法及設備 - Google Patents

沉積製程同步化之方法及設備 Download PDF

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Publication number
TWI600785B
TWI600785B TW102126141A TW102126141A TWI600785B TW I600785 B TWI600785 B TW I600785B TW 102126141 A TW102126141 A TW 102126141A TW 102126141 A TW102126141 A TW 102126141A TW I600785 B TWI600785 B TW I600785B
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TW
Taiwan
Prior art keywords
devices
chamber
substrate
process control
controller
Prior art date
Application number
TW102126141A
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English (en)
Chinese (zh)
Other versions
TW201406982A (zh
Inventor
梁溫壽
米勒凱斯Ａ
強森卡羅
萊克馬丁李
徐瞱
Original Assignee
應用材料股份有限公司
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Publication of TW201406982A publication Critical patent/TW201406982A/zh
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/046—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/44—Physical vapour deposition [PVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/042—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers
    • H10W20/043—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers for electroplating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/054—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by selectively removing parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
    • H10W20/057—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches by selectively depositing, e.g. by using selective CVD or plating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Physical Vapour Deposition (AREA)
  • General Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Automation & Control Theory (AREA)
TW102126141A 2012-08-09 2013-07-22 沉積製程同步化之方法及設備 TWI600785B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US13/570,712 US20140046475A1 (en) 2012-08-09 2012-08-09 Method and apparatus deposition process synchronization

Publications (2)

Publication Number Publication Date
TW201406982A TW201406982A (zh) 2014-02-16
TWI600785B true TWI600785B (zh) 2017-10-01

Family

ID=50066787

Family Applications (1)

Application Number Title Priority Date Filing Date
TW102126141A TWI600785B (zh) 2012-08-09 2013-07-22 沉積製程同步化之方法及設備

Country Status (7)

Country Link
US (1) US20140046475A1 (enExample)
EP (1) EP2883240B1 (enExample)
JP (1) JP6412498B2 (enExample)
KR (1) KR102108717B1 (enExample)
CN (1) CN104520972B (enExample)
TW (1) TWI600785B (enExample)
WO (1) WO2014025508A1 (enExample)

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US10312065B2 (en) * 2016-07-20 2019-06-04 Applied Materials, Inc. Physical vapor deposition (PVD) plasma energy control per dynamic magnetron control
TWI733850B (zh) * 2016-07-27 2021-07-21 美商應用材料股份有限公司 使用沉積/蝕刻技術之無接縫溝道填充
JP6559107B2 (ja) * 2016-09-09 2019-08-14 東京エレクトロン株式会社 成膜方法および成膜システム
US10438846B2 (en) * 2017-11-28 2019-10-08 Taiwan Semiconductor Manufacturing Co., Ltd. Physical vapor deposition process for semiconductor interconnection structures
US11532463B2 (en) 2019-07-29 2022-12-20 Applied Materials, Inc. Semiconductor processing chamber and methods for cleaning the same
CN110484884A (zh) * 2019-09-06 2019-11-22 北京北方华创微电子装备有限公司 磁控溅射控制系统及其控制方法
CN110643964B (zh) * 2019-09-24 2022-06-14 北京北方华创微电子装备有限公司 磁控溅射工艺中直流电源的控制方法、控制装置及系统
US20210391176A1 (en) * 2020-06-16 2021-12-16 Applied Materials, Inc. Overhang reduction using pulsed bias
US11371148B2 (en) * 2020-08-24 2022-06-28 Applied Materials, Inc. Fabricating a recursive flow gas distribution stack using multiple layers
US12581926B2 (en) * 2021-07-14 2026-03-17 Applied Materials Inc. Methods and apparatus for processing a substrate
US12412738B1 (en) 2024-10-30 2025-09-09 Applied Materials, Inc. System for target arcing mapping and plasma diagnosis
CN121802382B (zh) * 2026-03-09 2026-05-12 常熟众特汽车饰件有限公司 一种用于汽车饰件等离子改性处理的智能控制方法及系统

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US20120070982A1 (en) * 2010-09-21 2012-03-22 Applied Materials, Inc. Methods for forming layers on a substrate

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Also Published As

Publication number Publication date
JP6412498B2 (ja) 2018-10-24
JP2015533928A (ja) 2015-11-26
KR20150043389A (ko) 2015-04-22
TW201406982A (zh) 2014-02-16
CN104520972A (zh) 2015-04-15
EP2883240A1 (en) 2015-06-17
KR102108717B1 (ko) 2020-05-08
CN104520972B (zh) 2017-12-26
WO2014025508A1 (en) 2014-02-13
EP2883240A4 (en) 2016-04-27
US20140046475A1 (en) 2014-02-13
EP2883240B1 (en) 2020-09-02

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