TWI599857B - 曝光裝置及曝光方法、以及元件製造方法 - Google Patents
曝光裝置及曝光方法、以及元件製造方法 Download PDFInfo
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- TWI599857B TWI599857B TW105125425A TW105125425A TWI599857B TW I599857 B TWI599857 B TW I599857B TW 105125425 A TW105125425 A TW 105125425A TW 105125425 A TW105125425 A TW 105125425A TW I599857 B TWI599857 B TW I599857B
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Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
- G03F7/70108—Off-axis setting using a light-guiding element, e.g. diffractive optical elements [DOEs] or light guides
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
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- G—PHYSICS
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/70516—Calibration of components of the microlithographic apparatus, e.g. light sources, addressable masks or detectors
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70716—Stages
- G03F7/70725—Stages control
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- G—PHYSICS
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
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- G—PHYSICS
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
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- G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70975—Assembly, maintenance, transport or storage of apparatus
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
- G03F9/7046—Strategy, e.g. mark, sensor or wavelength selection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49004—Electrical device making including measuring or testing of device or component part
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Optical Transform (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US23670109P | 2009-08-25 | 2009-08-25 | |
| US12/859,983 US8493547B2 (en) | 2009-08-25 | 2010-08-20 | Exposure apparatus, exposure method, and device manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201643563A TW201643563A (zh) | 2016-12-16 |
| TWI599857B true TWI599857B (zh) | 2017-09-21 |
Family
ID=43625431
Family Applications (7)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW105125425A TWI599857B (zh) | 2009-08-25 | 2010-08-25 | 曝光裝置及曝光方法、以及元件製造方法 |
| TW107145919A TWI689793B (zh) | 2009-08-25 | 2010-08-25 | 曝光裝置及曝光方法、以及元件製造方法 |
| TW106115209A TWI628518B (zh) | 2009-08-25 | 2010-08-25 | 曝光裝置及曝光方法、以及元件製造方法 |
| TW103129830A TWI559095B (zh) | 2009-08-25 | 2010-08-25 | 曝光裝置及曝光方法、以及元件製造方法 |
| TW107107276A TWI649644B (zh) | 2009-08-25 | 2010-08-25 | 曝光裝置及曝光方法、以及元件製造方法 |
| TW104123218A TWI574120B (zh) | 2009-08-25 | 2010-08-25 | 曝光裝置及曝光方法、以及元件製造方法 |
| TW099128361A TWI497224B (zh) | 2009-08-25 | 2010-08-25 | 曝光裝置及曝光方法、以及元件製造方法 |
Family Applications After (6)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW107145919A TWI689793B (zh) | 2009-08-25 | 2010-08-25 | 曝光裝置及曝光方法、以及元件製造方法 |
| TW106115209A TWI628518B (zh) | 2009-08-25 | 2010-08-25 | 曝光裝置及曝光方法、以及元件製造方法 |
| TW103129830A TWI559095B (zh) | 2009-08-25 | 2010-08-25 | 曝光裝置及曝光方法、以及元件製造方法 |
| TW107107276A TWI649644B (zh) | 2009-08-25 | 2010-08-25 | 曝光裝置及曝光方法、以及元件製造方法 |
| TW104123218A TWI574120B (zh) | 2009-08-25 | 2010-08-25 | 曝光裝置及曝光方法、以及元件製造方法 |
| TW099128361A TWI497224B (zh) | 2009-08-25 | 2010-08-25 | 曝光裝置及曝光方法、以及元件製造方法 |
Country Status (8)
| Country | Link |
|---|---|
| US (11) | US8493547B2 (cg-RX-API-DMAC7.html) |
| EP (5) | EP2470962B1 (cg-RX-API-DMAC7.html) |
| JP (9) | JP5637495B2 (cg-RX-API-DMAC7.html) |
| KR (8) | KR101585837B1 (cg-RX-API-DMAC7.html) |
| CN (4) | CN104678718A (cg-RX-API-DMAC7.html) |
| HK (2) | HK1250795A1 (cg-RX-API-DMAC7.html) |
| TW (7) | TWI599857B (cg-RX-API-DMAC7.html) |
| WO (1) | WO2011024985A1 (cg-RX-API-DMAC7.html) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI693486B (zh) * | 2017-11-30 | 2020-05-11 | 大陸商上海微電子裝備（集團）股份有限公司 | 信號處理裝置及處理方法、對準系統及對準方法和光蝕刻機 |
Families Citing this family (43)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8514395B2 (en) * | 2009-08-25 | 2013-08-20 | Nikon Corporation | Exposure method, exposure apparatus, and device manufacturing method |
| US8493547B2 (en) | 2009-08-25 | 2013-07-23 | Nikon Corporation | Exposure apparatus, exposure method, and device manufacturing method |
| NL2006699A (en) * | 2010-06-03 | 2011-12-06 | Asml Netherlands Bv | Stage apparatus and lithographic apparatus comprising such stage apparatus. |
| JP5756267B2 (ja) * | 2010-09-03 | 2015-07-29 | オリンパス株式会社 | エンコーダ用信号処理回路 |
| NL2007818A (en) | 2010-12-20 | 2012-06-21 | Asml Netherlands Bv | Method of updating calibration data and a device manufacturing method. |
| WO2013070568A2 (en) * | 2011-11-10 | 2013-05-16 | Nikon Corporation | System and method for controlling a temperature of a reaction assembly |
| US9207549B2 (en) | 2011-12-29 | 2015-12-08 | Nikon Corporation | Exposure apparatus and exposure method, and device manufacturing method with encoder of higher reliability for position measurement |
| CN103246172B (zh) * | 2012-02-10 | 2016-12-28 | 约翰内斯﹒海德汉博士有限公司 | 具有位置测量装置的多个扫描单元的装置 |
| DE102012210309A1 (de) * | 2012-06-19 | 2013-12-19 | Dr. Johannes Heidenhain Gmbh | Positionsmesseinrichtung |
| US9678433B2 (en) * | 2012-10-02 | 2017-06-13 | Nikon Corporation | Exposure apparatus and exposure method, and device manufacturing method |
| JP6384479B2 (ja) * | 2013-06-28 | 2018-09-05 | 株式会社ニコン | 移動体装置及び露光装置、並びにデバイス製造方法 |
| JP6223091B2 (ja) * | 2013-09-25 | 2017-11-01 | 株式会社Ｓｃｒｅｅｎホールディングス | 位置計測装置、アライメント装置、パターン描画装置および位置計測方法 |
| CN104865798B (zh) * | 2014-02-21 | 2017-07-11 | 无锡华润上华科技有限公司 | 光刻工艺中的曝光场的尺寸选择方法 |
| JP6488073B2 (ja) * | 2014-02-28 | 2019-03-20 | 株式会社日立ハイテクノロジーズ | ステージ装置およびそれを用いた荷電粒子線装置 |
| WO2016008641A1 (en) * | 2014-07-16 | 2016-01-21 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| KR102284227B1 (ko) | 2014-12-24 | 2021-07-30 | 가부시키가이샤 니콘 | 계측 장치 및 계측 방법, 노광 장치 및 노광 방법, 그리고 디바이스 제조 방법 |
| CN111948913B (zh) * | 2015-02-23 | 2023-09-01 | 株式会社尼康 | 基板处理系统及基板处理方法 |
| KR102552792B1 (ko) | 2015-02-23 | 2023-07-06 | 가부시키가이샤 니콘 | 계측 장치, 리소그래피 시스템 및 노광 장치, 그리고 디바이스 제조 방법 |
| EP4300194A3 (en) | 2015-02-23 | 2024-04-10 | Nikon Corporation | Measurement device, lithography system and exposure apparatus, and control method, overlay measurement method and device manufacturing method |
| CN107710383A (zh) | 2015-06-08 | 2018-02-16 | 株式会社尼康 | 带电粒子束曝光装置及器件制造方法 |
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