TWI598936B - 具有用於磊晶處理的一致性調整透鏡之支座支撐桿 - Google Patents
具有用於磊晶處理的一致性調整透鏡之支座支撐桿 Download PDFInfo
- Publication number
- TWI598936B TWI598936B TW103105348A TW103105348A TWI598936B TW I598936 B TWI598936 B TW I598936B TW 103105348 A TW103105348 A TW 103105348A TW 103105348 A TW103105348 A TW 103105348A TW I598936 B TWI598936 B TW I598936B
- Authority
- TW
- Taiwan
- Prior art keywords
- support
- arms
- substrate
- refractive lens
- processing chamber
- Prior art date
Links
- 238000000034 method Methods 0.000 title description 13
- 230000008569 process Effects 0.000 title description 11
- 239000000758 substrate Substances 0.000 claims description 67
- 238000012545 processing Methods 0.000 claims description 58
- 239000007787 solid Substances 0.000 claims description 44
- 239000010453 quartz Substances 0.000 claims description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- 230000002093 peripheral effect Effects 0.000 claims description 12
- 239000012780 transparent material Substances 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 5
- 230000007423 decrease Effects 0.000 claims description 2
- 239000011521 glass Substances 0.000 claims description 2
- 229920003023 plastic Polymers 0.000 claims description 2
- 230000005855 radiation Effects 0.000 description 27
- 238000009529 body temperature measurement Methods 0.000 description 9
- 230000008859 change Effects 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 4
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 229910003468 tantalcarbide Inorganic materials 0.000 description 4
- 238000001816 cooling Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000004886 process control Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000005070 sampling Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 238000004616 Pyrometry Methods 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000000265 homogenisation Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B1/00—Details of electric heating devices
- H05B1/02—Automatic switching arrangements specially adapted to apparatus ; Control of heating devices
- H05B1/0227—Applications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B2203/00—Aspects relating to Ohmic resistive heating covered by group H05B3/00
- H05B2203/032—Heaters specially adapted for heating by radiation heating
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201361798503P | 2013-03-15 | 2013-03-15 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201435979A TW201435979A (zh) | 2014-09-16 |
| TWI598936B true TWI598936B (zh) | 2017-09-11 |
Family
ID=51522909
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW103105348A TWI598936B (zh) | 2013-03-15 | 2014-02-18 | 具有用於磊晶處理的一致性調整透鏡之支座支撐桿 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US9532401B2 (enExample) |
| JP (2) | JP6396409B2 (enExample) |
| KR (1) | KR101819095B1 (enExample) |
| CN (1) | CN105027275B (enExample) |
| DE (1) | DE112014001376T5 (enExample) |
| TW (1) | TWI598936B (enExample) |
| WO (1) | WO2014143499A1 (enExample) |
Families Citing this family (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9814099B2 (en) * | 2013-08-02 | 2017-11-07 | Applied Materials, Inc. | Substrate support with surface feature for reduced reflection and manufacturing techniques for producing same |
| WO2016109063A1 (en) * | 2015-01-02 | 2016-07-07 | Applied Materials, Inc. | Processing chamber |
| JP6554328B2 (ja) | 2015-05-29 | 2019-07-31 | 株式会社Screenホールディングス | 熱処理装置 |
| US20170178758A1 (en) * | 2015-12-18 | 2017-06-22 | Applied Materials, Inc. | Uniform wafer temperature achievement in unsymmetric chamber environment |
| US9721826B1 (en) * | 2016-01-26 | 2017-08-01 | Taiwan Semiconductor Manufacturing Co., Ltd. | Wafer supporting structure, and device and method for manufacturing semiconductor |
| KR20240145054A (ko) * | 2016-03-28 | 2024-10-04 | 어플라이드 머티어리얼스, 인코포레이티드 | 서셉터 지지부 |
| DE102016212780A1 (de) | 2016-07-13 | 2018-01-18 | Siltronic Ag | Vorrichtung zur Handhabung einer Halbleiterscheibe in einem Epitaxie-Reaktor und Verfahren zur Herstellung einer Halbleiterscheibe mit epitaktischer Schicht |
| US10840114B1 (en) * | 2016-07-26 | 2020-11-17 | Raytheon Company | Rapid thermal anneal apparatus and method |
| US10312117B2 (en) * | 2016-08-10 | 2019-06-04 | Lam Research Ag | Apparatus and radiant heating plate for processing wafer-shaped articles |
| KR102357017B1 (ko) * | 2016-09-05 | 2022-01-28 | 신에쯔 한도타이 가부시키가이샤 | 기상 성장 장치 및 에피택셜 웨이퍼의 제조 방법 |
| US10658204B2 (en) | 2017-08-08 | 2020-05-19 | Lam Research Ag | Spin chuck with concentrated center and radial heating |
| CN110373654B (zh) * | 2018-04-13 | 2021-09-17 | 北京北方华创微电子装备有限公司 | 叉指结构、下电极装置和工艺腔室 |
| CN110373655B (zh) * | 2018-04-13 | 2021-12-17 | 北京北方华创微电子装备有限公司 | 叉指结构、下电极装置和工艺腔室 |
| KR102848536B1 (ko) | 2018-08-06 | 2025-08-21 | 어플라이드 머티어리얼스, 인코포레이티드 | 처리 챔버를 위한 라이너 |
| CN111304740A (zh) * | 2018-12-11 | 2020-06-19 | 西安奕斯伟硅片技术有限公司 | 外延生长装置及其制作方法 |
| KR102640172B1 (ko) | 2019-07-03 | 2024-02-23 | 삼성전자주식회사 | 기판 처리 장치 및 이의 구동 방법 |
| KR102263006B1 (ko) * | 2019-07-18 | 2021-06-10 | 세메스 주식회사 | 기판 처리 장치 |
| US12084770B2 (en) * | 2020-08-18 | 2024-09-10 | Globalwafers Co., Ltd. | Window for chemical vapor deposition systems and related methods |
| CN112216636A (zh) * | 2020-08-27 | 2021-01-12 | 西安奕斯伟硅片技术有限公司 | 一种晶圆外延反应设备 |
| JP7698042B2 (ja) * | 2020-10-13 | 2025-06-24 | チュソン エンジニアリング カンパニー,リミテッド | 基板処理装置{substrate processing apparatus} |
| US20220210872A1 (en) * | 2020-12-31 | 2022-06-30 | Globalwafers Co., Ltd. | System and methods for a radiant heat cap in a semiconductor wafer reactor |
| CN113604871B (zh) * | 2021-08-10 | 2023-04-18 | 西安奕斯伟材料科技有限公司 | 一种用于硅片的外延生长的基座支撑架、装置及方法 |
| US12134835B2 (en) * | 2021-09-01 | 2024-11-05 | Applied Materials, Inc. | Quartz susceptor for accurate non-contact temperature measurement |
| KR20230122477A (ko) * | 2022-02-14 | 2023-08-22 | 주성엔지니어링(주) | 기판 처리 장치 |
| EP4523250A1 (en) * | 2022-05-12 | 2025-03-19 | Watlow Electric Manufacturing Company | Hybrid shaft assembly for thermal control in heated semiconductor pedestals |
| US12308207B2 (en) * | 2022-08-18 | 2025-05-20 | Applied Materials Israel Ltd. | Enhanced deposition rate by thermal isolation cover for GIS manipulator |
| CN117821947A (zh) * | 2022-09-29 | 2024-04-05 | 中微半导体设备(上海)股份有限公司 | 一种石英部件及其制作方法以及基片处理设备 |
| CN116024655A (zh) * | 2022-11-30 | 2023-04-28 | 西安奕斯伟材料科技有限公司 | 硅片外延生长基座支撑架及装置 |
| US20240363378A1 (en) * | 2023-04-27 | 2024-10-31 | Applied Materials, Inc. | Components and apparatus for improving uniformity of an epitaxial layer |
Family Cites Families (40)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6054354U (ja) * | 1983-09-21 | 1985-04-16 | 鹿児島日本電気株式会社 | 発光ダイオ−ド装置 |
| US4639139A (en) | 1985-09-27 | 1987-01-27 | Wyko Corporation | Optical profiler using improved phase shifting interferometry |
| US4821674A (en) * | 1987-03-31 | 1989-04-18 | Deboer Wiebe B | Rotatable substrate supporting mechanism with temperature sensing device for use in chemical vapor deposition equipment |
| US4993355A (en) * | 1987-03-31 | 1991-02-19 | Epsilon Technology, Inc. | Susceptor with temperature sensing device |
| US5044943A (en) | 1990-08-16 | 1991-09-03 | Applied Materials, Inc. | Spoked susceptor support for enhanced thermal uniformity of susceptor in semiconductor wafer processing apparatus |
| DE4231069A1 (de) | 1992-09-17 | 1994-03-24 | Leica Mikroskopie & Syst | Variabler Auflicht-Interferenzansatz nach Mirau |
| US5421893A (en) * | 1993-02-26 | 1995-06-06 | Applied Materials, Inc. | Susceptor drive and wafer displacement mechanism |
| JP3220619B2 (ja) * | 1995-05-24 | 2001-10-22 | 松下電器産業株式会社 | ガス伝熱プラズマ処理装置 |
| CN100354673C (zh) * | 1997-05-16 | 2007-12-12 | Hoya株式会社 | 将光学镜片底料设定于支座上的机构 |
| US6021152A (en) * | 1997-07-11 | 2000-02-01 | Asm America, Inc. | Reflective surface for CVD reactor walls |
| EP1036406B1 (en) | 1997-11-03 | 2003-04-02 | ASM America, Inc. | Improved low mass wafer support system |
| US6301434B1 (en) | 1998-03-23 | 2001-10-09 | Mattson Technology, Inc. | Apparatus and method for CVD and thermal processing of semiconductor substrates |
| JP4402763B2 (ja) * | 1999-05-13 | 2010-01-20 | Sumco Techxiv株式会社 | エピタキシャルウェーハ製造装置 |
| US6315833B1 (en) * | 1999-07-01 | 2001-11-13 | Applied Materials, Inc. | Silicon carbide sleeve for substrate support assembly |
| JP4592849B2 (ja) * | 1999-10-29 | 2010-12-08 | アプライド マテリアルズ インコーポレイテッド | 半導体製造装置 |
| US6399510B1 (en) * | 2000-09-12 | 2002-06-04 | Applied Materials, Inc. | Bi-directional processing chamber and method for bi-directional processing of semiconductor substrates |
| JP2003100855A (ja) * | 2001-09-27 | 2003-04-04 | Shin Etsu Handotai Co Ltd | シリコン単結晶ウェーハ処理装置、シリコン単結晶ウェーハおよびシリコンエピタキシャルウェーハの製造方法 |
| US7232591B2 (en) * | 2002-04-09 | 2007-06-19 | Matsushita Electric Industrial Co., Ltd. | Method of using an adhesive for temperature control during plasma processing |
| JP4173344B2 (ja) * | 2002-10-02 | 2008-10-29 | 株式会社小糸製作所 | 車両用灯具 |
| US7654221B2 (en) * | 2003-10-06 | 2010-02-02 | Applied Materials, Inc. | Apparatus for electroless deposition of metals onto semiconductor substrates |
| US20060005770A1 (en) * | 2004-07-09 | 2006-01-12 | Robin Tiner | Independently moving substrate supports |
| WO2007091638A1 (ja) * | 2006-02-09 | 2007-08-16 | Sumco Techxiv Corporation | サセプタおよびエピタキシャルウェハの製造装置 |
| US8234835B2 (en) * | 2007-03-16 | 2012-08-07 | Quest Product Development Corporation | Integrated multilayer insulation |
| US20090194024A1 (en) * | 2008-01-31 | 2009-08-06 | Applied Materials, Inc. | Cvd apparatus |
| JP5145984B2 (ja) | 2008-02-05 | 2013-02-20 | 株式会社デンソー | 半導体製造装置およびそれを用いた半導体装置の製造方法 |
| US8372196B2 (en) | 2008-11-04 | 2013-02-12 | Sumco Techxiv Corporation | Susceptor device, manufacturing apparatus of epitaxial wafer, and manufacturing method of epitaxial wafer |
| JP5184302B2 (ja) * | 2008-11-04 | 2013-04-17 | Sumco Techxiv株式会社 | サセプタ装置、エピタキシャルウェハの製造装置、および、エピタキシャルウェハの製造方法 |
| JP2010114139A (ja) * | 2008-11-04 | 2010-05-20 | Sumco Techxiv株式会社 | サセプタ装置、エピタキシャルウェハの製造装置、および、エピタキシャルウェハの製造方法 |
| CN102498557A (zh) * | 2009-08-05 | 2012-06-13 | 应用材料公司 | 化学气相沉积设备 |
| US9127360B2 (en) * | 2009-10-05 | 2015-09-08 | Applied Materials, Inc. | Epitaxial chamber with cross flow |
| JP5446760B2 (ja) | 2009-11-16 | 2014-03-19 | 株式会社Sumco | エピタキシャル成長方法 |
| US20110155058A1 (en) * | 2009-12-18 | 2011-06-30 | Applied Materials, Inc. | Substrate processing apparatus having a radiant cavity |
| KR100960239B1 (ko) | 2010-04-05 | 2010-06-01 | 주성엔지니어링(주) | 서셉터 지지대를 포함한 박막증착장치 |
| US8591700B2 (en) * | 2010-08-19 | 2013-11-26 | Stmicroelectronics Pte Ltd. | Susceptor support system |
| WO2012134663A2 (en) * | 2011-03-16 | 2012-10-04 | Applied Materials, Inc | Method and apparatus utilizing a single lift mechanism for processing and transfer of substrates |
| US9512520B2 (en) * | 2011-04-25 | 2016-12-06 | Applied Materials, Inc. | Semiconductor substrate processing system |
| JP5712782B2 (ja) * | 2011-05-13 | 2015-05-07 | 株式会社Sumco | エピタキシャルウェーハ成長装置用サセプタサポートシャフトおよびエピタキシャル成長装置 |
| US20130025538A1 (en) * | 2011-07-27 | 2013-01-31 | Applied Materials, Inc. | Methods and apparatus for deposition processes |
| US9401271B2 (en) * | 2012-04-19 | 2016-07-26 | Sunedison Semiconductor Limited (Uen201334164H) | Susceptor assemblies for supporting wafers in a reactor apparatus |
| US9123765B2 (en) * | 2013-03-11 | 2015-09-01 | Applied Materials, Inc. | Susceptor support shaft for improved wafer temperature uniformity and process repeatability |
-
2014
- 2014-02-14 JP JP2016500273A patent/JP6396409B2/ja active Active
- 2014-02-14 DE DE112014001376.5T patent/DE112014001376T5/de not_active Withdrawn
- 2014-02-14 US US14/181,035 patent/US9532401B2/en active Active
- 2014-02-14 CN CN201480010968.0A patent/CN105027275B/zh active Active
- 2014-02-14 KR KR1020157028642A patent/KR101819095B1/ko active Active
- 2014-02-14 WO PCT/US2014/016608 patent/WO2014143499A1/en not_active Ceased
- 2014-02-18 TW TW103105348A patent/TWI598936B/zh active
-
2018
- 2018-08-29 JP JP2018159892A patent/JP6577104B2/ja active Active
Also Published As
| Publication number | Publication date |
|---|---|
| WO2014143499A1 (en) | 2014-09-18 |
| KR20150130479A (ko) | 2015-11-23 |
| JP6396409B2 (ja) | 2018-09-26 |
| DE112014001376T5 (de) | 2015-11-26 |
| JP2019016800A (ja) | 2019-01-31 |
| US20140263268A1 (en) | 2014-09-18 |
| US9532401B2 (en) | 2016-12-27 |
| KR101819095B1 (ko) | 2018-01-16 |
| CN105027275A (zh) | 2015-11-04 |
| JP2016519208A (ja) | 2016-06-30 |
| JP6577104B2 (ja) | 2019-09-18 |
| TW201435979A (zh) | 2014-09-16 |
| CN105027275B (zh) | 2018-06-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI598936B (zh) | 具有用於磊晶處理的一致性調整透鏡之支座支撐桿 | |
| TWI625820B (zh) | 用於改良晶圓溫度均勻性和製程可重複性的基座支撐軸 | |
| CN104641463B (zh) | 改良的边缘环的周缘 | |
| US9752253B2 (en) | Epitaxial growth apparatus | |
| TWI601233B (zh) | 用於急速熱處理的最小接觸邊緣環 | |
| TW201724320A (zh) | 用於epi製程之晶圓加熱的二極體雷射 | |
| US10147623B2 (en) | Pyrometry filter for thermal process chamber | |
| JP5807522B2 (ja) | エピタキシャル成長装置 | |
| JP2013058627A (ja) | エピタキシャル成長装置 | |
| JP2010114331A (ja) | エピタキシャルウェーハの製造方法 | |
| JP6299635B2 (ja) | 気相成長装置及び気相成長装置に用いるリフレクタ | |
| KR101540573B1 (ko) | 웨이퍼 제조 장치 |