KR101819095B1 - Ｅｐｉ 프로세스를 위한 균일성 튜닝 렌즈를 갖는 서셉터 지지 샤프트 - Google Patents

Ｅｐｉ 프로세스를 위한 균일성 튜닝 렌즈를 갖는 서셉터 지지 샤프트 Download PDF

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KR101819095B1
KR101819095B1 KR1020157028642A KR20157028642A KR101819095B1 KR 101819095 B1 KR101819095 B1 KR 101819095B1 KR 1020157028642 A KR1020157028642 A KR 1020157028642A KR 20157028642 A KR20157028642 A KR 20157028642A KR 101819095 B1 KR101819095 B1 KR 101819095B1
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support
susceptor
support shaft
substrate
arms
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KR20150130479A (ko
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제펭 콩
발라수브라마니안 라마찬드란
마사토 이시이
수에빈 리
메흐메트 투그룰 사미르
슈-콴 라우
폴 브릴하트
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어플라이드 머티어리얼스, 인코포레이티드
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B1/00—Details of electric heating devices
    • H05B1/02—Automatic switching arrangements specially adapted to apparatus ; Control of heating devices
    • H05B1/0227—Applications
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B2203/00—Aspects relating to Ohmic resistive heating covered by group H05B3/00
    • H05B2203/032—Heaters specially adapted for heating by radiation heating

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  • Engineering & Computer Science (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
KR1020157028642A 2013-03-15 2014-02-14 Ｅｐｉ 프로세스를 위한 균일성 튜닝 렌즈를 갖는 서셉터 지지 샤프트 Active KR101819095B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201361798503P 2013-03-15 2013-03-15
US61/798,503 2013-03-15
PCT/US2014/016608 WO2014143499A1 (en) 2013-03-15 2014-02-14 Susceptor support shaft with uniformity tuning lenses for epi process

Publications (2)

Publication Number Publication Date
KR20150130479A KR20150130479A (ko) 2015-11-23
KR101819095B1 true KR101819095B1 (ko) 2018-01-16

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US (1) US9532401B2 (enExample)
JP (2) JP6396409B2 (enExample)
KR (1) KR101819095B1 (enExample)
CN (1) CN105027275B (enExample)
DE (1) DE112014001376T5 (enExample)
TW (1) TWI598936B (enExample)
WO (1) WO2014143499A1 (enExample)

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US20170178758A1 (en) * 2015-12-18 2017-06-22 Applied Materials, Inc. Uniform wafer temperature achievement in unsymmetric chamber environment
US9721826B1 (en) * 2016-01-26 2017-08-01 Taiwan Semiconductor Manufacturing Co., Ltd. Wafer supporting structure, and device and method for manufacturing semiconductor
KR20240145054A (ko) * 2016-03-28 2024-10-04 어플라이드 머티어리얼스, 인코포레이티드 서셉터 지지부
DE102016212780A1 (de) 2016-07-13 2018-01-18 Siltronic Ag Vorrichtung zur Handhabung einer Halbleiterscheibe in einem Epitaxie-Reaktor und Verfahren zur Herstellung einer Halbleiterscheibe mit epitaktischer Schicht
US10840114B1 (en) * 2016-07-26 2020-11-17 Raytheon Company Rapid thermal anneal apparatus and method
US10312117B2 (en) * 2016-08-10 2019-06-04 Lam Research Ag Apparatus and radiant heating plate for processing wafer-shaped articles
KR102357017B1 (ko) * 2016-09-05 2022-01-28 신에쯔 한도타이 가부시키가이샤 기상 성장 장치 및 에피택셜 웨이퍼의 제조 방법
US10658204B2 (en) 2017-08-08 2020-05-19 Lam Research Ag Spin chuck with concentrated center and radial heating
CN110373654B (zh) * 2018-04-13 2021-09-17 北京北方华创微电子装备有限公司 叉指结构、下电极装置和工艺腔室
CN110373655B (zh) * 2018-04-13 2021-12-17 北京北方华创微电子装备有限公司 叉指结构、下电极装置和工艺腔室
KR102848536B1 (ko) 2018-08-06 2025-08-21 어플라이드 머티어리얼스, 인코포레이티드 처리 챔버를 위한 라이너
CN111304740A (zh) * 2018-12-11 2020-06-19 西安奕斯伟硅片技术有限公司 外延生长装置及其制作方法
KR102640172B1 (ko) 2019-07-03 2024-02-23 삼성전자주식회사 기판 처리 장치 및 이의 구동 방법
KR102263006B1 (ko) * 2019-07-18 2021-06-10 세메스 주식회사 기판 처리 장치
US12084770B2 (en) * 2020-08-18 2024-09-10 Globalwafers Co., Ltd. Window for chemical vapor deposition systems and related methods
CN112216636A (zh) * 2020-08-27 2021-01-12 西安奕斯伟硅片技术有限公司 一种晶圆外延反应设备
JP7698042B2 (ja) * 2020-10-13 2025-06-24 チュソン エンジニアリング カンパニー，リミテッド 基板処理装置｛ｓｕｂｓｔｒａｔｅ ｐｒｏｃｅｓｓｉｎｇ ａｐｐａｒａｔｕｓ｝
US20220210872A1 (en) * 2020-12-31 2022-06-30 Globalwafers Co., Ltd. System and methods for a radiant heat cap in a semiconductor wafer reactor
CN113604871B (zh) * 2021-08-10 2023-04-18 西安奕斯伟材料科技有限公司 一种用于硅片的外延生长的基座支撑架、装置及方法
US12134835B2 (en) * 2021-09-01 2024-11-05 Applied Materials, Inc. Quartz susceptor for accurate non-contact temperature measurement
KR20230122477A (ko) * 2022-02-14 2023-08-22 주성엔지니어링(주) 기판 처리 장치
EP4523250A1 (en) * 2022-05-12 2025-03-19 Watlow Electric Manufacturing Company Hybrid shaft assembly for thermal control in heated semiconductor pedestals
US12308207B2 (en) * 2022-08-18 2025-05-20 Applied Materials Israel Ltd. Enhanced deposition rate by thermal isolation cover for GIS manipulator
CN117821947A (zh) * 2022-09-29 2024-04-05 中微半导体设备(上海)股份有限公司 一种石英部件及其制作方法以及基片处理设备
CN116024655A (zh) * 2022-11-30 2023-04-28 西安奕斯伟材料科技有限公司 硅片外延生长基座支撑架及装置
US20240363378A1 (en) * 2023-04-27 2024-10-31 Applied Materials, Inc. Components and apparatus for improving uniformity of an epitaxial layer

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Also Published As

Publication number Publication date
WO2014143499A1 (en) 2014-09-18
TWI598936B (zh) 2017-09-11
KR20150130479A (ko) 2015-11-23
JP6396409B2 (ja) 2018-09-26
DE112014001376T5 (de) 2015-11-26
JP2019016800A (ja) 2019-01-31
US20140263268A1 (en) 2014-09-18
US9532401B2 (en) 2016-12-27
CN105027275A (zh) 2015-11-04
JP2016519208A (ja) 2016-06-30
JP6577104B2 (ja) 2019-09-18
TW201435979A (zh) 2014-09-16
CN105027275B (zh) 2018-06-26

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