TWI597859B - 用於封裝一入射輻射檢測器的方法及封裝的入射輻射檢測器 - Google Patents

用於封裝一入射輻射檢測器的方法及封裝的入射輻射檢測器 Download PDF

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Publication number
TWI597859B
TWI597859B TW100138076A TW100138076A TWI597859B TW I597859 B TWI597859 B TW I597859B TW 100138076 A TW100138076 A TW 100138076A TW 100138076 A TW100138076 A TW 100138076A TW I597859 B TWI597859 B TW I597859B
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TW
Taiwan
Prior art keywords
detector
opaque
layer
cover
seal ring
Prior art date
Application number
TW100138076A
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English (en)
Chinese (zh)
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TW201234633A (en
Inventor
羅蘭德Ｗ 葛奇
史帝芬Ｈ 布萊克
湯瑪斯Ａ 柯席恩
布 迪柏
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雷神公司
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Application filed by 雷神公司 filed Critical 雷神公司
Publication of TW201234633A publication Critical patent/TW201234633A/zh
Application granted granted Critical
Publication of TWI597859B publication Critical patent/TWI597859B/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/804—Containers or encapsulations
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/04—Casings
    • G01J5/041—Mountings in enclosures or in a particular environment
    • G01J5/045—Sealings; Vacuum enclosures; Encapsulated packages; Wafer bonding structures; Getter arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/0032—Packages or encapsulation
    • B81B7/0077—Other packages not provided for in groups B81B7/0035 - B81B7/0074
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/0198—Manufacture or treatment batch processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07331—Connecting techniques
    • H10W72/07336—Soldering or alloying
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/331—Shapes of die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/331—Shapes of die-attach connectors
    • H10W72/332—Plan-view shape, i.e. in top view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/351—Materials of die-attach connectors
    • H10W72/352—Materials of die-attach connectors comprising metals or metalloids, e.g. solders
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/923—Bond pads having multiple stacked layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/941—Dispositions of bond pads
    • H10W72/942—Dispositions of bond pads relative to underlying supporting features, e.g. bond pads, RDLs or vias
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/60—Seals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
TW100138076A 2010-10-21 2011-10-20 用於封裝一入射輻射檢測器的方法及封裝的入射輻射檢測器 TWI597859B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US40562110P 2010-10-21 2010-10-21
US13/275,635 US8809784B2 (en) 2010-10-21 2011-10-18 Incident radiation detector packaging

Publications (2)

Publication Number Publication Date
TW201234633A TW201234633A (en) 2012-08-16
TWI597859B true TWI597859B (zh) 2017-09-01

Family

ID=45971785

Family Applications (1)

Application Number Title Priority Date Filing Date
TW100138076A TWI597859B (zh) 2010-10-21 2011-10-20 用於封裝一入射輻射檢測器的方法及封裝的入射輻射檢測器

Country Status (6)

Country Link
US (1) US8809784B2 (https=)
EP (1) EP2630660B1 (https=)
JP (1) JP5873094B2 (https=)
IL (1) IL225715A (https=)
TW (1) TWI597859B (https=)
WO (1) WO2012054687A1 (https=)

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US8736045B1 (en) 2012-11-02 2014-05-27 Raytheon Company Integrated bondline spacers for wafer level packaged circuit devices
US9287188B2 (en) * 2013-02-05 2016-03-15 Taiwan Semiconductor Manufacturing Company, Ltd. Method and apparatus for a seal ring structure
US9673169B2 (en) 2013-02-05 2017-06-06 Taiwan Semiconductor Manufacturing Company, Ltd. Method and apparatus for a wafer seal ring
JP2014186006A (ja) * 2013-03-25 2014-10-02 Toshiba Corp 赤外線撮像装置および赤外線撮像モジュール
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JP5997393B2 (ja) * 2013-09-27 2016-09-28 京セラ株式会社 蓋体、パッケージおよび電子装置
JP6344555B2 (ja) * 2014-05-28 2018-06-20 パナソニックＩｐマネジメント株式会社 固体撮像装置
US9334154B2 (en) 2014-08-11 2016-05-10 Raytheon Company Hermetically sealed package having stress reducing layer
JP6891203B2 (ja) * 2014-08-11 2021-06-18 レイセオン カンパニー 応力低減レイヤを有する密封されたパッケージ
JP6891202B2 (ja) * 2014-08-11 2021-06-18 レイセオン カンパニー 応力低減レイヤを有する密封されたパッケージ
KR101931010B1 (ko) * 2014-08-11 2018-12-19 레이던 컴퍼니 응력 감소층을 갖는 기밀 밀봉된 패키지
US9508681B2 (en) * 2014-12-22 2016-11-29 Google Inc. Stacked semiconductor chip RGBZ sensor
US9756273B2 (en) * 2015-03-04 2017-09-05 Sensors Unlimited, Inc. Multi-tiered tamper-resistant assembly system and method
CN104779214A (zh) * 2015-04-16 2015-07-15 歌尔声学股份有限公司 集成传感器的封装结构
US9771258B2 (en) 2015-06-24 2017-09-26 Raytheon Company Wafer level MEMS package including dual seal ring
US20170081178A1 (en) * 2015-09-22 2017-03-23 Freescale Semiconductor, Inc. Semiconductor device package with seal structure
US9570321B1 (en) 2015-10-20 2017-02-14 Raytheon Company Use of an external getter to reduce package pressure
JP2018146263A (ja) * 2017-03-01 2018-09-20 浜松ホトニクス株式会社 光検出器
CN107681017B (zh) * 2017-09-26 2019-04-09 中国科学院长春光学精密机械与物理研究所 一种自下而上生长AlGaN基紫外及深紫外探测器阵列的方法
JP7292077B2 (ja) * 2018-07-11 2023-06-16 三菱電機株式会社 パッケージ素子の製造方法およびパッケージ素子
US11515220B2 (en) * 2019-12-04 2022-11-29 Advanced Semiconductor Engineering, Inc. Semiconductor package structures and methods of manufacturing the same

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Also Published As

Publication number Publication date
IL225715A (en) 2017-10-31
US8809784B2 (en) 2014-08-19
WO2012054687A1 (en) 2012-04-26
JP2013543268A (ja) 2013-11-28
EP2630660B1 (en) 2018-10-03
JP5873094B2 (ja) 2016-03-01
EP2630660A1 (en) 2013-08-28
TW201234633A (en) 2012-08-16
IL225715A0 (en) 2013-06-27
US20120096813A1 (en) 2012-04-26

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