TWI596642B - A drawing data generation method, a multi-charged particle beam drawing apparatus, and a pattern inspection apparatus - Google Patents

A drawing data generation method, a multi-charged particle beam drawing apparatus, and a pattern inspection apparatus Download PDF

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Publication number
TWI596642B
TWI596642B TW104129795A TW104129795A TWI596642B TW I596642 B TWI596642 B TW I596642B TW 104129795 A TW104129795 A TW 104129795A TW 104129795 A TW104129795 A TW 104129795A TW I596642 B TWI596642 B TW I596642B
Authority
TW
Taiwan
Prior art keywords
trapezoid
pattern
data
drawing data
charged particle
Prior art date
Application number
TW104129795A
Other languages
English (en)
Chinese (zh)
Other versions
TW201626422A (zh
Inventor
Kenichi Yasui
Shigehiro Hara
Original Assignee
Nuflare Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nuflare Technology Inc filed Critical Nuflare Technology Inc
Publication of TW201626422A publication Critical patent/TW201626422A/zh
Application granted granted Critical
Publication of TWI596642B publication Critical patent/TWI596642B/zh

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Classifications

    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00—Computer-aided design [CAD]
    • G06F30/30—Circuit design
    • G06F30/39—Circuit design at the physical level
    • G06F30/398—Design verification or optimisation, e.g. using design rule check [DRC], layout versus schematics [LVS] or finite element methods [FEM]
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00—Computer-aided design [CAD]
    • G06F30/30—Circuit design
    • G06F30/39—Circuit design at the physical level
    • G06F30/392—Floor-planning or layout, e.g. partitioning or placement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/302—Controlling tubes by external information, e.g. programme control
    • H01J37/3023—Programme control
    • H01J37/3026—Patterning strategy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31761—Patterning strategy
    • H01J2237/31764—Dividing into sub-patterns

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Theoretical Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • Geometry (AREA)
  • Evolutionary Computation (AREA)
  • Architecture (AREA)
  • Electron Beam Exposure (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
TW104129795A 2014-10-08 2015-09-09 A drawing data generation method, a multi-charged particle beam drawing apparatus, and a pattern inspection apparatus TWI596642B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014207332A JP2016076654A (ja) 2014-10-08 2014-10-08 描画データ生成方法、プログラム、マルチ荷電粒子ビーム描画装置、及びパターン検査装置

Publications (2)

Publication Number Publication Date
TW201626422A TW201626422A (zh) 2016-07-16
TWI596642B true TWI596642B (zh) 2017-08-21

Family

ID=55655622

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104129795A TWI596642B (zh) 2014-10-08 2015-09-09 A drawing data generation method, a multi-charged particle beam drawing apparatus, and a pattern inspection apparatus

Country Status (4)

Country Link
US (1) US9558315B2 (enExample)
JP (1) JP2016076654A (enExample)
KR (1) KR101782335B1 (enExample)
TW (1) TWI596642B (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6679933B2 (ja) * 2016-01-05 2020-04-15 株式会社ニューフレアテクノロジー 描画データ作成方法
JP2018170448A (ja) * 2017-03-30 2018-11-01 株式会社ニューフレアテクノロジー 描画データ作成方法
JP6756320B2 (ja) 2017-09-20 2020-09-16 株式会社ニューフレアテクノロジー 描画データ生成方法、プログラム、マルチ荷電粒子ビーム描画装置、及びパターン検査装置
JP7119688B2 (ja) 2018-07-18 2022-08-17 株式会社ニューフレアテクノロジー 描画データ生成方法、プログラム、及びマルチ荷電粒子ビーム描画装置
JP7172420B2 (ja) * 2018-10-15 2022-11-16 株式会社ニューフレアテクノロジー 描画データ生成方法及びマルチ荷電粒子ビーム描画装置
JP2023141514A (ja) * 2022-03-24 2023-10-05 株式会社Ｓｃｒｅｅｎホールディングス 描画データ生成装置、描画システムおよび描画データ生成方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1820346B (zh) * 2003-05-09 2011-01-19 株式会社荏原制作所 基于带电粒子束的检查装置及采用了该检查装置的器件制造方法
US20120286174A1 (en) * 2011-05-12 2012-11-15 Nuflare Technology, Inc. Charged particle beam writing apparatus and charged particle beam writing method
TW201346970A (zh) * 2012-03-29 2013-11-16 Nuflare Technology Inc 荷電粒子束描繪裝置及描繪資料的檢查方法

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JPS559433A (en) * 1978-07-07 1980-01-23 Toshiba Corp Electron beam exposure device
US4280186A (en) * 1978-07-07 1981-07-21 Tokyo Shibaura Denki Kabushiki Kaisha Exposure apparatus using electron beams
JPS6066427A (ja) * 1983-09-21 1985-04-16 Mitsubishi Electric Corp 二次元パタ−ン発生装置
US4837447A (en) * 1986-05-06 1989-06-06 Research Triangle Institute, Inc. Rasterization system for converting polygonal pattern data into a bit-map
JPS63211625A (ja) * 1986-10-17 1988-09-02 Jeol Ltd 円弧パタ−ン露光方法及び装置
JPH05175107A (ja) * 1991-12-24 1993-07-13 Jeol Ltd 荷電粒子ビーム描画方法
JP4068081B2 (ja) 2004-05-26 2008-03-26 株式会社日立ハイテクノロジーズ 荷電粒子線描画装置
JP2007033902A (ja) * 2005-07-27 2007-02-08 Advanced Mask Inspection Technology Kk パターン検査装置、パターン検査方法、及び被検査物
JP2008177224A (ja) * 2007-01-16 2008-07-31 Nuflare Technology Inc 図形データの検証方法
JP2009109580A (ja) 2007-10-26 2009-05-21 Toshiba Corp マスク描画データ作成方法
JP2009111116A (ja) * 2007-10-30 2009-05-21 Orc Mfg Co Ltd 描画装置
JP5658997B2 (ja) 2010-12-17 2015-01-28 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置および描画データ生成方法
JP6133603B2 (ja) * 2013-01-21 2017-05-24 株式会社日立ハイテクノロジーズ 荷電粒子線装置用の検査データ処理装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1820346B (zh) * 2003-05-09 2011-01-19 株式会社荏原制作所 基于带电粒子束的检查装置及采用了该检查装置的器件制造方法
US20120286174A1 (en) * 2011-05-12 2012-11-15 Nuflare Technology, Inc. Charged particle beam writing apparatus and charged particle beam writing method
TW201346970A (zh) * 2012-03-29 2013-11-16 Nuflare Technology Inc 荷電粒子束描繪裝置及描繪資料的檢查方法

Also Published As

Publication number Publication date
JP2016076654A (ja) 2016-05-12
TW201626422A (zh) 2016-07-16
US20160103945A1 (en) 2016-04-14
KR20160041765A (ko) 2016-04-18
US9558315B2 (en) 2017-01-31
KR101782335B1 (ko) 2017-09-27

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