JP7119688B2 - 描画データ生成方法、プログラム、及びマルチ荷電粒子ビーム描画装置 - Google Patents
描画データ生成方法、プログラム、及びマルチ荷電粒子ビーム描画装置 Download PDFInfo
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
- G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/70508—Data handling in all parts of the microlithographic apparatus, e.g. handling pattern data for addressable masks or data transfer to or from different components within the exposure apparatus
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- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
- H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
- G03F7/70558—Dose control, i.e. achievement of a desired dose
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70733—Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask
- G03F7/70741—Handling masks outside exposure position, e.g. reticle libraries
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/045—Beam blanking or chopping, i.e. arrangements for momentarily interrupting exposure to the discharge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/10—Lenses
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- H—ELECTRICITY
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- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/302—Controlling tubes by external information, e.g. programme control
- H01J37/3023—Programme control
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/04—Means for controlling the discharge
- H01J2237/043—Beam blanking
- H01J2237/0435—Multi-aperture
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- H—ELECTRICITY
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- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
- H01J2237/202—Movement
- H01J2237/20221—Translation
- H01J2237/20228—Mechanical X-Y scanning
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- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/304—Controlling tubes
- H01J2237/30472—Controlling the beam
- H01J2237/30483—Scanning
- H01J2237/30488—Raster scan
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- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3175—Lithography
- H01J2237/31761—Patterning strategy
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- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
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- H01J2237/31761—Patterning strategy
- H01J2237/31762—Computer and memory organisation
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- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3175—Lithography
- H01J2237/31769—Proximity effect correction
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- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3175—Lithography
- H01J2237/31774—Multi-beam
Description
10 描画部
12 電子ビーム鏡筒
14 電子銃
16 照明レンズ
18 成形アパーチャアレイ基板
20 ブランキングプレート
22 縮小レンズ
24 制限アパーチャ部材
26 対物レンズ
28 偏向器
30 描画室
32 XYステージ
34 基板
36 ミラー
50 制御部
52 制御計算機
54、56 偏向制御回路
58 ステージ位置検出器
70 変換装置
Claims (5)
- マルチ荷電粒子ビーム描画装置で用いられる描画データを生成する描画データ生成方法であって、
複数の頂点を含む頂点列が登録されたライブラリデータを参照し、設計データに含まれている図形の外形線のうち、前記頂点列に対応する部分及び回転、反転又は拡縮した前記頂点列に対応する部分を抽出し、
抽出した部分を、該頂点列を識別する情報と、該頂点列の複数の頂点の接続形式を示す情報と、該頂点列の回転、反転又は拡縮に関する情報とで表現して、前記描画データを生成することを特徴とする描画データ生成方法。 - 前記ライブラリデータは、許容誤差範囲を示す許容誤差情報を含み、
図形の外形線のうち、前記頂点列を基準とした許容誤差範囲に含まれる部分を抽出することを特徴とする請求項1に記載の描画データ生成方法。 - マルチ荷電粒子ビーム描画装置で用いられる描画データをコンピュータに生成させるプログラムであって、
複数の頂点を含む頂点列が登録されたライブラリデータを参照し、設計データに含まれている図形の外形線のうち、前記頂点列に対応する部分及び回転、反転又は拡縮した前記頂点列に対応する部分を抽出するステップと、
抽出した部分を、該頂点列を識別する情報と、該頂点列の複数の頂点の接続形式を示す情報と、該頂点列の回転、反転又は拡縮に関する情報とで表現して、前記描画データを生成するステップと、
を前記コンピュータに実行させることを特徴とするプログラム。 - 複数の荷電粒子ビームからなるマルチビームを形成し、前記マルチビームのうち、それぞれ対応するビームに対して個別にビームのオン/オフを行い、基板に荷電粒子ビームを照射してパターンを描画する描画部と、
複数の頂点を含む頂点列が登録されたライブラリデータを参照し、設計データに含まれている図形の外形線のうち、前記頂点列に対応する部分及び回転、反転又は拡縮した前記頂点列に対応する部分を抽出し、抽出した部分を、該頂点列を識別する情報と、該頂点列の複数の頂点の接続形式を示す情報と、該頂点列の回転、反転又は拡縮に関する情報とで表現して、描画データを生成し、該描画データに基づいて前記描画部を制御する制御部と、
を備えるマルチ荷電粒子ビーム描画装置。 - 複数の荷電粒子ビームからなるマルチビームを形成し、前記マルチビームのうち、それぞれ対応するビームに対して個別にビームのオン/オフを行い、基板に荷電粒子ビームを照射してパターンを描画する描画部と、
設計データに含まれている図形の外形線が、ライブラリデータに登録されたそれぞれ複数の頂点を含む複数の頂点列のうちのいずれかを指定する情報と、指定する頂点列の複数の頂点の接続形式を示す情報と、該頂点列の回転、反転又は拡縮に関する情報とで表現されているデータ構造を有する描画データの入力を受け付け、前記描画データで指定された頂点列を前記ライブラリデータから取り出し、前記接続形式を示す情報及び前記回転、反転又は拡縮に関する情報とに基づいて、取り出した頂点列を回転、反転又は拡縮し、各頂点を接続して図形を再構成し、再構成した図形に基づいて前記描画部を制御する制御部と、
を備えるマルチ荷電粒子ビーム描画装置。
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JP2018135232A JP7119688B2 (ja) | 2018-07-18 | 2018-07-18 | 描画データ生成方法、プログラム、及びマルチ荷電粒子ビーム描画装置 |
TW108121190A TWI710006B (zh) | 2018-07-18 | 2019-06-19 | 描畫資料產生方法、記錄程式之電腦可讀取記錄媒體以及多帶電粒子束描畫裝置 |
US16/448,147 US10971331B2 (en) | 2018-07-18 | 2019-06-21 | Writing data generation method, computer-readable recording medium on which program is recorded, and multi-charged particle beam writing apparatus |
KR1020190084281A KR102293626B1 (ko) | 2018-07-18 | 2019-07-12 | 묘화 데이터 생성 방법, 프로그램을 기록한 컴퓨터로 판독 가능한 기록 매체 및 멀티 하전 입자빔 묘화 장치 |
CN201910649368.3A CN110737178B (zh) | 2018-07-18 | 2019-07-18 | 描绘数据生成方法、计算机可读记录介质及多带电粒子束描绘装置 |
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JP2022053208A (ja) * | 2020-09-24 | 2022-04-05 | 株式会社ニューフレアテクノロジー | データ生成方法、荷電粒子ビーム照射装置及びプログラム |
JP2023025503A (ja) | 2021-08-10 | 2023-02-22 | 株式会社ニューフレアテクノロジー | データ生成方法、荷電粒子ビーム照射装置及びプログラム |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009141306A (ja) | 2007-11-16 | 2009-06-25 | Jeol Ltd | 荷電粒子ビーム描画におけるパターン分割方法 |
JP2016076654A (ja) | 2014-10-08 | 2016-05-12 | 株式会社ニューフレアテクノロジー | 描画データ生成方法、プログラム、マルチ荷電粒子ビーム描画装置、及びパターン検査装置 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6063677A (ja) | 1983-09-16 | 1985-04-12 | Nec Corp | イメ−ジ情報蓄積方式 |
JP2680295B2 (ja) | 1984-03-22 | 1997-11-19 | 株式会社東芝 | 電子ビーム露光装置の描画データ作成方法及びその装置 |
JPH04274575A (ja) | 1991-02-28 | 1992-09-30 | Fujitsu Ltd | 図形描画方式 |
JPH07114591A (ja) | 1993-10-18 | 1995-05-02 | Mitsutoyo Corp | パターンデータの編集処理システム |
JPH07160899A (ja) * | 1993-12-07 | 1995-06-23 | Fujitsu Ltd | 多角形分割描画方法および装置 |
JP3239975B2 (ja) * | 1994-11-29 | 2001-12-17 | 富士通株式会社 | 多角形描画装置 |
JPH08263673A (ja) | 1995-03-20 | 1996-10-11 | Fujitsu Ltd | 外周線描画装置 |
JP3612166B2 (ja) | 1997-03-18 | 2005-01-19 | 株式会社東芝 | 荷電ビーム描画データ作成方法および装置 |
US6128767A (en) * | 1997-10-30 | 2000-10-03 | Chapman; David C. | Polygon representation in an integrated circuit layout |
JP4634289B2 (ja) * | 2005-11-25 | 2011-02-16 | 株式会社日立ハイテクノロジーズ | 半導体パターン形状評価装置および形状評価方法 |
JP4903675B2 (ja) * | 2006-12-29 | 2012-03-28 | 株式会社リコー | 収差評価方法、収差補正方法、電子線描画装置、電子顕微鏡、原盤、スタンパ、記録媒体、及び構造物 |
WO2008114320A1 (ja) * | 2007-03-20 | 2008-09-25 | Fujitsu Microelectronics Limited | 図形描画処理装置、および処理方法 |
US8378319B2 (en) * | 2010-03-22 | 2013-02-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | System and method for generating direct-write pattern |
US8404403B2 (en) * | 2010-06-25 | 2013-03-26 | Intel Corporation | Mask design and OPC for device manufacture |
KR101749440B1 (ko) * | 2013-02-20 | 2017-06-20 | 가부시키가이샤 히다치 하이테크놀로지즈 | 패턴 측정 장치 및 반도체 계측 시스템 |
JP6447163B2 (ja) * | 2015-01-21 | 2019-01-09 | 株式会社ニューフレアテクノロジー | エネルギービーム描画装置の描画データ作成方法 |
WO2018138855A1 (ja) | 2017-01-27 | 2018-08-02 | 三菱電機株式会社 | 画像描画装置、画像描画方法、及び画像描画プログラム |
JP2018170448A (ja) | 2017-03-30 | 2018-11-01 | 株式会社ニューフレアテクノロジー | 描画データ作成方法 |
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