TWI596242B - 原料融液液面與種結晶下端之間隔測定方法、種結晶之預熱方法以及單結晶之製造方法 - Google Patents

原料融液液面與種結晶下端之間隔測定方法、種結晶之預熱方法以及單結晶之製造方法 Download PDF

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TWI596242B
TWI596242B TW105105600A TW105105600A TWI596242B TW I596242 B TWI596242 B TW I596242B TW 105105600 A TW105105600 A TW 105105600A TW 105105600 A TW105105600 A TW 105105600A TW I596242 B TWI596242 B TW I596242B
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crystal
raw material
material melt
seed crystal
point
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TW105105600A
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Chinese (zh)
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TW201702438A (zh
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清水泰順
高梨啟一
中野清貴
斉藤正夫
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Ｓｕｍｃｏ股份有限公司
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
TW105105600A 2015-02-26 2016-02-25 原料融液液面與種結晶下端之間隔測定方法、種結晶之預熱方法以及單結晶之製造方法 TWI596242B (zh)

Applications Claiming Priority (1)

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JP2015036233A JP6428372B2 (ja) 2015-02-26 2015-02-26 原料融液液面と種結晶下端との間隔測定方法、種結晶の予熱方法、および単結晶の製造方法

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TW201702438A TW201702438A (zh) 2017-01-16
TWI596242B true TWI596242B (zh) 2017-08-21

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TW105105600A TWI596242B (zh) 2015-02-26 2016-02-25 原料融液液面與種結晶下端之間隔測定方法、種結晶之預熱方法以及單結晶之製造方法

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JP (1) JP6428372B2 (ja)
CN (1) CN105926033B (ja)
TW (1) TWI596242B (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI828140B (zh) * 2021-09-06 2024-01-01 日商Ｓｕｍｃｏ股份有限公司 單結晶的製造方法及單結晶製造裝置

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6939714B2 (ja) * 2018-06-11 2021-09-22 株式会社Sumco 融液面と種結晶の間隔測定方法、種結晶の予熱方法、及び単結晶の製造方法
DE112021005298T5 (de) 2020-10-07 2023-08-31 Sumco Corporation Herstellungsverfahren für einkristalle
CN116732604A (zh) 2022-06-01 2023-09-12 四川晶科能源有限公司 一种单晶拉晶方法以及单晶拉晶设备

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CN1147570A (zh) * 1995-06-02 1997-04-16 Memc电子材料有限公司 用于控制硅单晶生长的系统和方法
CN1272147A (zh) * 1997-09-30 2000-11-01 Memc电子材料有限公司 控制硅晶体生长的方法和系统

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JPH04328425A (ja) * 1991-04-26 1992-11-17 Sumitomo Metal Ind Ltd 液面位置測定方法，装置及び単結晶引上方法，装置
WO2000022201A1 (en) * 1998-10-14 2000-04-20 Memc Electronic Materials, Inc. Method and apparatus for accurately pulling a crystal
JP4325389B2 (ja) * 2003-12-15 2009-09-02 信越半導体株式会社 融液面初期位置調整装置及び融液面初期位置調整方法並びに単結晶の製造方法
CN101168848A (zh) * 2006-10-23 2008-04-30 北京有色金属研究总院 一种直拉硅单晶炉的熔硅液面位置的控制方法
JP5167651B2 (ja) * 2007-02-08 2013-03-21 信越半導体株式会社 遮熱部材下端面と原料融液面との間の距離の測定方法、及びその距離の制御方法
KR101080569B1 (ko) * 2009-01-21 2011-11-04 주식회사 엘지실트론 잉곳 성장 과정에서 용융 간격 측정 및 제어 방법
JP5293625B2 (ja) * 2010-01-29 2013-09-18 信越半導体株式会社 シリコン単結晶の製造方法及びシリコン単結晶の製造装置
CN102677157A (zh) * 2012-06-04 2012-09-19 曾泽斌 一种直拉硅单晶炉的硅熔体液面相对位置的测量方法
CN103628131B (zh) * 2013-12-06 2016-05-04 西安德伍拓自动化传动系统有限公司 一种单晶硅拉晶炉的熔融硅液面检测方法及测量装置
CN104005083B (zh) * 2014-05-20 2016-06-29 北京工业大学 一种测量单晶炉熔硅液面高度的装置与方法

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Publication number Priority date Publication date Assignee Title
CN1147570A (zh) * 1995-06-02 1997-04-16 Memc电子材料有限公司 用于控制硅单晶生长的系统和方法
CN1272147A (zh) * 1997-09-30 2000-11-01 Memc电子材料有限公司 控制硅晶体生长的方法和系统

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI828140B (zh) * 2021-09-06 2024-01-01 日商Ｓｕｍｃｏ股份有限公司 單結晶的製造方法及單結晶製造裝置

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TW201702438A (zh) 2017-01-16
CN105926033A (zh) 2016-09-07
JP2016155729A (ja) 2016-09-01
CN105926033B (zh) 2019-02-05
JP6428372B2 (ja) 2018-11-28

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