TWI583639B - 氧化矽－鈦玻璃，氧化矽－鈦玻璃之製造方法，以及氧化矽－鈦玻璃之分類方法 - Google Patents
氧化矽－鈦玻璃，氧化矽－鈦玻璃之製造方法，以及氧化矽－鈦玻璃之分類方法 Download PDFInfo
- Publication number
- TWI583639B TWI583639B TW102146894A TW102146894A TWI583639B TW I583639 B TWI583639 B TW I583639B TW 102146894 A TW102146894 A TW 102146894A TW 102146894 A TW102146894 A TW 102146894A TW I583639 B TWI583639 B TW I583639B
- Authority
- TW
- Taiwan
- Prior art keywords
- cerium oxide
- titanium glass
- glass
- titanium
- tio
- Prior art date
Links
- 239000011521 glass Substances 0.000 title claims description 179
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 238000000034 method Methods 0.000 title description 37
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 title 2
- GZRQIDVFTAQASP-UHFFFAOYSA-N [Ce+3].[O-2].[Ti+4] Chemical compound [Ce+3].[O-2].[Ti+4] GZRQIDVFTAQASP-UHFFFAOYSA-N 0.000 claims description 125
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 52
- 238000010438 heat treatment Methods 0.000 claims description 47
- 238000000137 annealing Methods 0.000 claims description 13
- 239000002994 raw material Substances 0.000 claims description 7
- 238000012360 testing method Methods 0.000 claims description 5
- 230000002194 synthesizing effect Effects 0.000 claims description 4
- 229910004356 Ti Raw Inorganic materials 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- 238000000280 densification Methods 0.000 description 38
- KNJBQISZLAUCMG-UHFFFAOYSA-N oxygen(2-) titanium(4+) yttrium(3+) Chemical compound [O-2].[Y+3].[Ti+4] KNJBQISZLAUCMG-UHFFFAOYSA-N 0.000 description 23
- 238000005259 measurement Methods 0.000 description 18
- 239000000758 substrate Substances 0.000 description 16
- 239000000463 material Substances 0.000 description 14
- 238000001900 extreme ultraviolet lithography Methods 0.000 description 12
- 239000010936 titanium Substances 0.000 description 12
- 230000003287 optical effect Effects 0.000 description 10
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 9
- 229910052719 titanium Inorganic materials 0.000 description 9
- 229910003902 SiCl 4 Inorganic materials 0.000 description 8
- 230000008859 change Effects 0.000 description 8
- 239000001257 hydrogen Substances 0.000 description 8
- 229910052739 hydrogen Inorganic materials 0.000 description 8
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 6
- 239000013081 microcrystal Substances 0.000 description 6
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 4
- 229910001220 stainless steel Inorganic materials 0.000 description 4
- 239000010935 stainless steel Substances 0.000 description 4
- 238000003786 synthesis reaction Methods 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000003384 imaging method Methods 0.000 description 3
- 230000007774 longterm Effects 0.000 description 3
- 230000000704 physical effect Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000002835 absorbance Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000007572 expansion measurement Methods 0.000 description 2
- 239000010419 fine particle Substances 0.000 description 2
- 238000000265 homogenisation Methods 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 238000010907 mechanical stirring Methods 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 239000001294 propane Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 230000008707 rearrangement Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000000859 sublimation Methods 0.000 description 2
- 230000008022 sublimation Effects 0.000 description 2
- CCCCITLTAYTIEO-UHFFFAOYSA-N titanium yttrium Chemical compound [Ti].[Y] CCCCITLTAYTIEO-UHFFFAOYSA-N 0.000 description 2
- 238000004017 vitrification Methods 0.000 description 2
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 238000004566 IR spectroscopy Methods 0.000 description 1
- 238000001069 Raman spectroscopy Methods 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NEGBOTVLELAPNE-UHFFFAOYSA-N [Ti].[Ce] Chemical compound [Ti].[Ce] NEGBOTVLELAPNE-UHFFFAOYSA-N 0.000 description 1
- RQVJYRSUFJTNEP-UHFFFAOYSA-N [Ti].[Ru]=O Chemical compound [Ti].[Ru]=O RQVJYRSUFJTNEP-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- SZXMUEQSHFYUFU-UHFFFAOYSA-N bismuth;dioxotitanium Chemical compound [Bi].O=[Ti]=O SZXMUEQSHFYUFU-UHFFFAOYSA-N 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 238000005056 compaction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005485 electric heating Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000004452 microanalysis Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- HEHINIICWNIGNO-UHFFFAOYSA-N oxosilicon;titanium Chemical compound [Ti].[Si]=O HEHINIICWNIGNO-UHFFFAOYSA-N 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- DPGAAOUOSQHIJH-UHFFFAOYSA-N ruthenium titanium Chemical compound [Ti].[Ru] DPGAAOUOSQHIJH-UHFFFAOYSA-N 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 238000004857 zone melting Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B20/00—Processes specially adapted for the production of quartz or fused silica articles, not otherwise provided for
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/06—Glass compositions containing silica with more than 90% silica by weight, e.g. quartz
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
- G01N33/38—Concrete; Lime; Mortar; Gypsum; Bricks; Ceramics; Glass
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P40/00—Technologies relating to the processing of minerals
- Y02P40/50—Glass production, e.g. reusing waste heat during processing or shaping
- Y02P40/57—Improving the yield, e-g- reduction of reject rates
Landscapes
- Chemical & Material Sciences (AREA)
- Glass Compositions (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)
- Glass Melting And Manufacturing (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013011359A JP5992842B2 (ja) | 2013-01-24 | 2013-01-24 | シリカチタニアガラスの製造方法及びシリカチタニアガラスの選別方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201434767A TW201434767A (zh) | 2014-09-16 |
| TWI583639B true TWI583639B (zh) | 2017-05-21 |
Family
ID=51423038
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW102146894A TWI583639B (zh) | 2013-01-24 | 2013-12-18 | 氧化矽－鈦玻璃，氧化矽－鈦玻璃之製造方法，以及氧化矽－鈦玻璃之分類方法 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP5992842B2 (ko) |
| KR (1) | KR101952404B1 (ko) |
| TW (1) | TWI583639B (ko) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102353976B1 (ko) * | 2020-07-16 | 2022-01-21 | 솔브레인 주식회사 | 박막 형성용 성장 조절제, 이를 이용한 박막 형성 방법 및 이로부터 제조된 반도체 기판 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004092082A1 (ja) * | 2003-04-11 | 2004-10-28 | Nikon Corporation | SiO2-TiO2系ガラスの製造方法、SiO2-TiO2系ガラス及び露光装置 |
| TW201223889A (en) * | 2010-09-02 | 2012-06-16 | Shinetsu Chemical Co | Titania-doped quartz glass and making method |
| CN102765871A (zh) * | 2011-04-11 | 2012-11-07 | 信越化学工业株式会社 | 掺杂二氧化钛的石英玻璃及制造方法 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE69841741D1 (de) * | 1997-09-24 | 2010-08-05 | Corning Inc | VERFAHREN ZUR HERSTELLUNG VON GESCHMOLZENES SiO2-TiO2 GLAS |
| USRE41220E1 (en) | 1999-07-22 | 2010-04-13 | Corning Incorporated | Extreme ultraviolet soft x-ray projection lithographic method system and lithographic elements |
| EP1218796A4 (en) | 1999-07-22 | 2006-08-23 | Corning Inc | EXTREMELY ULTRAVIOLET SOFT X-RAYS LITHOGRAPHIC PROJECTION AND MASKS |
| US6776006B2 (en) | 2000-10-13 | 2004-08-17 | Corning Incorporated | Method to avoid striae in EUV lithography mirrors |
| JP4132685B2 (ja) | 2001-01-16 | 2008-08-13 | 信越石英株式会社 | 石英ガラス及びその製造方法 |
| JP4792705B2 (ja) | 2003-04-03 | 2011-10-12 | 旭硝子株式会社 | ＴｉＯ２を含有するシリカガラスおよびその製造法 |
| JP4353742B2 (ja) | 2003-07-11 | 2009-10-28 | 信越石英株式会社 | 光学用合成石英ガラス材料及び光学用合成石英ガラスの評価方法 |
| JP5035516B2 (ja) | 2005-12-08 | 2012-09-26 | 信越化学工業株式会社 | フォトマスク用チタニアドープ石英ガラスの製造方法 |
| US20120026473A1 (en) | 2010-07-29 | 2012-02-02 | Michael Lucien Genier | Highly reflective, hardened silica titania article and method of making |
-
2013
- 2013-01-24 JP JP2013011359A patent/JP5992842B2/ja active Active
- 2013-12-17 KR KR1020130157229A patent/KR101952404B1/ko active IP Right Grant
- 2013-12-18 TW TW102146894A patent/TWI583639B/zh active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004092082A1 (ja) * | 2003-04-11 | 2004-10-28 | Nikon Corporation | SiO2-TiO2系ガラスの製造方法、SiO2-TiO2系ガラス及び露光装置 |
| TW201223889A (en) * | 2010-09-02 | 2012-06-16 | Shinetsu Chemical Co | Titania-doped quartz glass and making method |
| CN102765871A (zh) * | 2011-04-11 | 2012-11-07 | 信越化学工业株式会社 | 掺杂二氧化钛的石英玻璃及制造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20140095422A (ko) | 2014-08-01 |
| KR101952404B1 (ko) | 2019-02-26 |
| JP2014141377A (ja) | 2014-08-07 |
| JP5992842B2 (ja) | 2016-09-14 |
| TW201434767A (zh) | 2014-09-16 |
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