TWI581322B - Method of segmentation of optical element wafers - Google Patents

Method of segmentation of optical element wafers Download PDF

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TWI581322B
TWI581322B TW101111835A TW101111835A TWI581322B TW I581322 B TWI581322 B TW I581322B TW 101111835 A TW101111835 A TW 101111835A TW 101111835 A TW101111835 A TW 101111835A TW I581322 B TWI581322 B TW I581322B
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optical element
element wafer
dividing
laser beam
wafer
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TW101111835A
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TW201303988A (zh
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Hiroumi Ueno
Hitoshi Hoshino
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Disco Corp
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    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
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    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
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Description

光元件晶圓之分割方法 發明領域
本發明係有關一種在藍寶石等之結晶成長用基板上，藉由磊晶成長而形成有具複數光元件之發光層的光元件晶圓的分割方法。
發明背景
雷射二極體(LD)或發光二極體(LED)等之光元件之製造過程中，會製造在由藍寶石或SiC等構成結晶成長用基板的上面，例如藉由磊晶成長而形成有具複數光元件之發光層(磊晶層)的光元件晶圓。
LD、LED等光元件係形成於利用形成格子狀之分割預定線而劃分之各區域，且利用沿著分割預定線分割光元件晶圓而進行個片化，以製造各個光元件。
習知，作為沿著分割預定線分割光元件晶圓的方法，係沿著分割預定線對晶圓照射具有吸收性之波長的脈衝雷射光束，以形成雷射加工溝，藉由對該雷射加工溝賦予外力而割斷光元件晶圓的方法已為人所知(例如，特開平10-305420號公報)。
又，也提出了對光元件晶圓將聚光點調整於晶圓內部而照射具有透過性波長之脈衝雷射光束，以於內部形成沿著分割預定線之改質層，藉由在該改質層對強度降低之分割預定線賦予外力而分割光元件的方法(例如，參照特開 2005-86161號公報)。
另一方面，在特開平10-125956號公報及特開平10-308532號公報提出了為了光元件之亮度提升，於光元件晶片之背面側形成反射膜的光元件晶片。
【先行技術文獻】
【專利文獻】
【專利文獻1】特開2005-86161號公報
【專利文獻2】特開平10-125956號公報
【專利文獻3】特開平10-308532號公報
發明概要
於光元件晶圓之內部定位雷射光束之聚光點的狀態下，從光元件晶圓之表面側照射雷射光束時，有如下述的問題。亦即，於光元件晶圓之內部定位之雷射光束的聚光點越接近光元件晶圓之背面側時，則光元件晶圓之表面之雷射光束的光束點就變得越大。
因此，為了防止因雷射光束的照射而損傷光元件，便需要充分之分割預定線的寬度，而每個光元件晶圓之光元件晶片的取得數就會變少，而使生產性惡化。
於光元件晶圓中，也有以提升光元件晶圓之亮度的目的而在與結晶成長用基板之磊晶層的界面側形成有微細凹凸的光元件晶圓，在如此之光元件晶圓無法照射來自表面側的雷射光束。
另一方面，從光元件晶圓的背面側照射雷射光束時，在背面側形成有反射膜之光元件晶圓中，會有所謂因反射膜的種類或雷射光束的波長，將照射於光元件晶圓之背面的雷射光束反射，而未進行雷射加工的問題。
本發明細鑑於如此之點而完成者，其目的係提供一種從背面側照射雷射光束而可將於背面側具有反射膜之光元件晶圓分割成各個光元件晶片之光元件晶圓之分割方法。
依據本發明，提供一種光元件晶圓之分割方法，其係於以設定於表面之複數交叉之分割預定線所劃分之各區域分別形成有光元件，且於背面形成有反射膜之光元件晶圓之分割方法，其特徵在於包含有：雷射光束照射步驟，係於光元件晶圓之內部定位雷射光束之集光點，且從光元件晶圓之背面側沿著該分割預定線照射雷射光束，以於光元件晶圓之內部形成改質層；及分割步驟，係在實施該雷射光束照射步驟後，將外力賦予光元件晶圓，將光元件晶圓沿著該分割預定線分割，以形成複數光元件晶片，在該雷射光束照射步驟中照射於光元件晶圓之雷射光束的波長係相對於該反射膜之透過率為80%以上。
較佳者，在雷射光束照射步驟中，照射於光元件晶圓之雷射光束的波長為680nm~1mm的範圍內。較佳者，反射膜係由積層有折射率相異之材料的多層膜所構成。
本案發明人刻意研究的結果，找出反射膜對雷射光束 之反射率小於20%，亦即利用將雷射光束對反射膜之透過率成為80%以上之波長的雷射光束從光元件晶圓之背面照射，可於光元件晶圓之內部形成改質層。
基於該獲得的知識，依據本發明，可從背面具有反射膜之光元件晶圓的背面側照射雷射光束以於內部形成改質層，將改質層作為分割起點而將光元件晶圓分割成光元件晶片，可解決不從背面側施加雷射加工或生產性惡化等習知之問題點。
圖式簡單說明
第1圖係實施本發明之分割方法所適用之雷射加工裝置的立體圖。
第2圖係光束照射單元之塊狀圖。
第3圖係光元件晶圓之表面側立體圖。
第4圖係背面具有反射膜之光元件晶圓的斷面圖。
第5圖係顯示雷射光束照射步驟之立體圖。
第6圖係說明雷射光束照射步驟之斷面圖。
第7圖係說明雷射光束照射步驟之其他實施形態的斷面圖。
第8圖係顯示第1實施形態之分割步驟的斷面圖。
第9圖係顯示第2實施形態之分割步驟的斷面圖。
較佳實施例之詳細說明
以下，參照圖面詳細說明本發明之實施形態。參照第1圖，顯示了於本發明之光元件晶圓的分割方法中，形成成 為分割起點之改質層所適用之雷射加工裝置2的概略構成圖。
雷射加工裝置2包含可朝X軸方向移動之搭載於靜止基台4上的第1滑動塊6。第1滑動塊6係藉由由球珠螺桿8及脈衝馬達10所構成之加工進給機構12，沿著一對導軌14朝加工進給方向，即朝X軸方向移動。
第1滑動塊6上搭載有可朝Y軸方向移動之第2滑動塊16。亦即，第2滑動塊16藉由由球珠螺桿18及脈衝馬達20所構成之分度進給機構22，沿著一對導軌24朝分度方向，即朝Y軸方向移動。
於第2滑動塊16上透過圓筒支持構件26而搭載有夾頭座28，夾頭座28藉由加工進給機構12及分度進給機構22而可朝X軸方向及Y軸方向移動。於夾頭座28設有夾鉗30，該夾鉗30係用以夾緊將吸引保持於夾頭座28之晶圓支持之環狀框。
於靜止基台4上豎立設置有柱32，於該柱32安裝有收容雷射光束照射單元34之殼體35。雷射光束照射單元34如第2圖所示，包含使YAG雷射或YVO4雷射振盪之雷射振盪器62、反覆頻率設定機構64、脈波寬度調整機構66與功率調整機構68。
藉由雷射光束照射單元34之功率調整機構68調整成預定功率的脈衝雷射光束，利用安裝於殼體35前端之集光器36的鏡子70反射，更藉由集光用物鏡72集光，而照射至保持於夾頭座28之光元件晶圓11。
於殼體35之前端部，配設有與集光器36排列於X軸方向以檢測應雷射加工之加工區域的攝影機構38。攝影機構38包含藉由可視光以攝影光元件晶圓11之加工區域之通常CCD等攝影元件。
攝影機構38更包含將紅外線照射於光元件晶圓11之紅外線照射機構、捕捉藉由紅外線照射機構照射之紅外線的光學系統、由輸出對應於藉由該光學系統所捕捉之紅外線的電子訊號之紅外線CCD等的紅外線攝影元件所構成之紅外線攝影機構，所攝影之影像訊號傳送至控制器(控制機構)40。
控制器40係藉由電腦所構成，具備有依據控制程式進行演算處理之中央處理裝置(CPU)42、收納控制程式等之唯讀記憶體(ROM)44、收納演算結果等之可讀寫的隨機存取記憶體(RAM)46、計數器48、輸入界面50與輸出界面52。
56係由沿著導軌14而配設之線性定標器54、配設於第1滑動塊6之未圖示的讀取頭所構成之加工進給量檢測機構，加工進給量機構56之檢測訊號輸入到控制器40之輸入界面50。
60係由沿著導軌24而配設之線性定標器58與配設於第2滑動塊16之圖未示的讀取頭所構成之分度進給量檢測機構，分度進給量檢測機構60之檢測訊號輸入到控制器40之輸入界面50。
攝影機構38所攝影之影像訊號也輸入到控制器40之輸入界面50。另一方面，從控制器40之輸出界面52輸出控制 訊號至脈衝馬達10、脈衝馬達20及雷射光束照射單元34等。
參照第3圖，係顯示成為本發明分割方法之加工對象的光元件晶圓11之表面側立體圖。光元件晶圓11係於藍寶石基板13上積層有氮化鎵(GaN)等磊晶層(發光層)15而構成。
光元件晶圓11於其背面形成有反射膜(參照第4圖)21。光元件晶圓11具有積層有磊晶層15之表面11a、與形成有反射膜21之背面11b。
反射膜21係由例如金屬膜或DBR(Distributed Bragg Reflector：分布布拉格反射體)等所構成。DBR係由積層有折射率相異之複數介電體之介電體多層膜所構成。
藍寶石基板13具有例如100μm的厚度，磊晶層15具有例如15μm的厚度。於磊晶層15藉由形成格子狀之分割預定線(street)17劃分而形成有LED等複數光元件19。
其次，參照第5圖至第8圖，就有關本發明實施形態之光元件晶圓之分割方法詳細進行說明。在實施該分割方法時，較佳者係如第5圖所示，將光元件晶圓貼固於外周部分貼固成環狀框F之黏著膠帶的切割膠帶T，透過切割膠帶T以環狀框F支持光元件晶圓11。
在雷射加工裝置2之夾頭座28透過切割膠帶T吸引保持光元件晶圓11，並使形成於光元件晶圓11之背面的反射膜21露出。
然後，以攝影機構38之紅外線攝影元件，從其背面11b側通過反射膜21攝影光元件晶圓11，實施將對應分割預定線17之區域與集光器36排列於X軸方向之對位。於該對位係 利用廣為所知之圖案匹配等圖像處理。
沿第1方向伸長之分割預定線17實施對位後，將夾頭座28旋轉90度後，實施朝與第1方向直交之第2方向伸長之分割預定線17的對位。
對位實施後，如第5圖及第6圖所示，於光元件晶圓11之內部定位雷射光束的集光點P(參照第6圖)，從光元件晶圓11之背面11b側通過反射膜21沿著分割預定線17照射雷射光束，實施於光元件晶圓11之內部形成成為分割起點之改質層23的雷射光束照射步驟。
在該雷射光束照射步驟中，將具有對反射膜21之透過率為80%以上波長之雷射光束從光元件晶圓11之背面11b側照射。較佳者，該雷射光束之波長為680nm~1mm的範圍。
具體而言，該雷射光束照射步驟係於光元件晶圓11之內部定位對反射膜21之透過率為80%以上之雷射光束的集光點P，且從光元件晶圓11之背面11b側沿著朝第1方向伸長之分割預定線13照射雷射光束，並在第5圖之箭頭X1方向加工進給夾頭座28，藉以於光元件晶圓11之內部形成朝第1方向伸長的改質層23。
一面將夾頭座28朝Y軸方向分度進給，一面於對應朝第1方向伸長之全部分割預定線17的晶圓11內部形成改質層23。接著，將夾頭座28旋轉90度後，於朝與第1方向直交之第2方向伸長之全部分割預定線17的晶圓11內部，形成同樣的改質層23。
改質層23稱為密度、折射率、機械強度及其他物理特 性與周圍成為相異狀態的區域。例如，係包含熔融再硬化區域、破裂區域、絕緣破壞區域、折射率變化區域，也包含該等區域混雜的區域者。
在光元件19由藍色LED構成時，該雷射光束照射步驟之加工條件係例如如下述般設定。
光源：LD激發Q開關 Nd：YVO4脈衝雷射
波長：1064nm
反覆頻率：100kHz
脈衝輸出：10μJ
集光點徑：ψ 1μm
加工進給速度：100mm/秒
在上述實施形態的雷射光束照射步驟中，雖將光元件晶圓11貼固於外周部貼固在環狀框F之切割膠帶T，且將光元件晶圓11透過切割膠帶T以夾頭座28吸引保持，然而如第7圖所示，也可是將光元件晶圓11之形成磊晶層15的表面11a側以夾頭座28直接吸引保持，以實施雷射光束照射步驟。
於該實施形態的情況，在實施分割步驟前，將對應全部分割預定線17之光元件晶圓11之內部區域形成有改質層23的光元件晶圓11，貼固於如第5圖所示之外周部貼固在環狀框F的切割膠帶T，透過切割膠帶T以環狀框F支持光元件晶圓11。
在本發明光元件晶圓之分割方法中，實施雷射光束照射步驟，於晶圓11之內部形成成為分割起點之改質層23 後，賦予外力於形成有改質層23之光元件晶圓11，實施沿著分割預定線17分割光元件晶圓11之分割步驟。
在該分割步驟之第1實施形態中，例如如第8圖所示，於圓筒76之載置面上載置環狀框F，以夾鉗78夾住環狀框F。且，將棒狀之分割夾具80配設於圓筒76內。
分割夾具80具有上段保持面82a與下段保持面82b，於下段保持面82b形成有開口之真空吸引路86。分割夾具80之詳細構造係揭示於特許第4361506號公報。
在實施分割夾具80之分割程序時，以箭頭86所示般一面將分割夾具80之真空吸引路84真空吸引，一面從下側使分割夾具80之上段保持面82a及下段保持面82b接觸於黏著膠帶T，並將分割夾具80朝箭頭A方向移動。亦即，朝與欲分割之分割預定線17直交的方向移動分割夾具80。
藉此，成為分割起點之改質層23朝分割夾具80之上段保持面82a的內側邊緣正上方移動時，彎曲應力會集中並發生於具有改質層23之分割預定線17的部分，利用該彎曲應力而使光元件晶圓11沿著分割預定線17割斷。
沿著朝第1方向伸長之全部分割預定線17之分割完成時，將分割夾具80旋轉90度，或是將圓筒76旋轉90度，並將沿著與朝第1方向伸長之分割預定線17直交之第2方向伸長之分割預定線17同樣地進行分割。藉此，光元件晶圓11分割成各個光元件晶片27。
其次，參照第9圖，就有關第2實施形態之分割步驟進行說明。在本實施形態之分割步驟中，於光元件晶圓11之 背面11b貼固接觸防止膜29。且，利用分割夾具90之一對支持台92一面支持光晶圓裝置11以使改質層23來到支持台92之正中央，一面將楔構件94從其表面11a側壓在光元件晶圓11。藉此，彎曲應力會集中並發生於具有改質層23之分割預定線11之部分，利用該彎曲應力而使光元件晶圓沿著分割預定線17割斷。
一面使分割夾具90以每分割預定線17之節距移動，一面沿著朝第1方向伸長之全部分割預定線17分割光元件晶圓。接著，將光元件晶圓11旋轉90度，並將朝第2方向伸長之分割預定線17同樣地進行分割。藉此，光元件晶圓11分割成各個光元件晶片27。
2‧‧‧雷射加工裝置
4‧‧‧靜止基台
6‧‧‧第1滑動塊
8‧‧‧球珠螺桿
10‧‧‧脈衝馬達
11‧‧‧光元件晶圓
11a‧‧‧表面
11b‧‧‧背面
12‧‧‧加工進給機構
13‧‧‧藍寶石基板
14‧‧‧導軌
15‧‧‧磊晶層
16‧‧‧第2滑動塊
17‧‧‧分割預定線
18‧‧‧球珠螺桿
19‧‧‧光元件
20‧‧‧脈衝馬達
21‧‧‧反射膜
22‧‧‧分度進給機構
23‧‧‧改質層
24‧‧‧導軌
26‧‧‧支持構件
27‧‧‧光元件晶圓
28‧‧‧夾頭座
29‧‧‧接觸防止膜
30‧‧‧夾鉗
32‧‧‧柱
34‧‧‧雷射光束照射單元
35‧‧‧殼體
36‧‧‧集光器
38‧‧‧攝影機構
40‧‧‧控制器
42‧‧‧中央處理裝置
44‧‧‧唯讀記憶體
46‧‧‧隨機存取記憶體
48‧‧‧計數器
50‧‧‧輸入界面
52‧‧‧輸出界面
54‧‧‧線性定標器
56‧‧‧加工進給量檢測機構
58‧‧‧線性定標器
60‧‧‧分度進給量檢測機構
62‧‧‧雷射振盪器
64‧‧‧反覆頻率設定機構
66‧‧‧脈波寬度調整機構
68‧‧‧功率調整機構
70‧‧‧鏡子
72‧‧‧集光用物鏡
76‧‧‧圓筒
78‧‧‧夾鉗
80‧‧‧分割夾具
82a‧‧‧上段保持面
82b‧‧‧下段保持面
84‧‧‧真空吸引路
86‧‧‧真空吸引路
90‧‧‧分割夾具
92‧‧‧支持台
94‧‧‧楔構件
A‧‧‧箭頭
F‧‧‧環狀框
P‧‧‧集光點
T‧‧‧切割膠帶
X1‧‧‧箭頭
第1圖係實施本發明之分割方法所適用之雷射加工裝置的立體圖。
第2圖係光束照射單元之塊狀圖。
第3圖係光元件晶圓之表面側立體圖。
第4圖係背面具有反射膜之光元件晶圓的斷面圖。
第5圖係顯示雷射光束照射步驟之立體圖。
第6圖係說明雷射光束照射步驟之斷面圖。
第7圖係說明雷射光束照射步驟之其他實施形態的斷面圖。
第8圖係顯示第1實施形態之分割步驟的斷面圖。
第9圖係顯示第2實施形態之分割步驟的斷面圖。
11‧‧‧光元件晶圓
11a‧‧‧表面
11b‧‧‧背面
13‧‧‧藍寶石基板
15‧‧‧磊晶層
19‧‧‧光元件
21‧‧‧反射膜
23‧‧‧改質層
36‧‧‧集光器
P‧‧‧集光點
T‧‧‧切割膠帶

Claims (3)

  1. 一種光元件晶圓之分割方法，係於以設定於表面之複數交叉之分割預定線所劃分之各區域分別形成有光元件，且於背面形成有反射膜之光元件晶圓之分割方法，其特徵在於包含有：雷射光束照射步驟，係於光元件晶圓之內部定位雷射光束之集光點，且從光元件晶圓之形成有該反射膜之側沿著該分割預定線照射雷射光束，以於光元件晶圓之內部形成改質層；及分割步驟，係在實施該雷射光束照射步驟後，將外力賦予光元件晶圓，將光元件晶圓沿著該分割預定線分割，以形成複數光元件晶片，在該雷射光束照射步驟中照射於光元件晶圓之雷射光束的波長係相對於該反射膜之透過率為80%以上。
  2. 如申請專利範圍第1項之光元件晶圓之分割方法，其中在該雷射光束照射步驟中，照射於光元件晶圓之雷射光束的波長為680nm~1mm。
  3. 如申請專利範圍第1或2項之光元件晶圓之分割方法，其中前述反射膜係由積層有折射率相異之材料的多層膜所構成。
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