TWI573990B - Measuring device and control method - Google Patents
Measuring device and control method Download PDFInfo
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- TWI573990B TWI573990B TW104128621A TW104128621A TWI573990B TW I573990 B TWI573990 B TW I573990B TW 104128621 A TW104128621 A TW 104128621A TW 104128621 A TW104128621 A TW 104128621A TW I573990 B TWI573990 B TW I573990B
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Description
本發明係關於對發光元件發出之光進行測量之測定裝置。 The present invention relates to an apparatus for measuring light emitted from a light-emitting element.
先前已知有一種使檢查對象之發光元件發光,且基於受光素子之檢測信號對發光元件進行檢查之方法。例如,專利文獻1揭示有一種設置遮光部之構成,該遮光部係於受光素子之檢查時,用以對檢查對象之發光元件進行覆蓋。 A method of illuminating a light-emitting element of an inspection object and inspecting the light-emitting element based on a detection signal of a photon is known. For example, Patent Document 1 discloses a configuration in which a light shielding portion for covering a light-emitting element to be inspected when the light-receiving element is inspected is provided.
專利文獻1:日本專利特開2010-101728號公報 Patent Document 1: Japanese Patent Laid-Open Publication No. 2010-101728
於在發光元件之測量時使遮光部移動至適合於遮光之位置之情況,當遮光部之位置因誤差等而發生偏移時,有可能產生光洩漏之間隙、或者因遮光部接觸於基板等而可能造成基板破損。 When the light-shielding portion is moved to a position suitable for light-shielding at the time of measurement of the light-emitting element, when the position of the light-shielding portion is shifted due to an error or the like, a gap of light leakage may occur, or the light-shielding portion may be in contact with the substrate or the like. It may cause damage to the substrate.
本發明係為了解決如上述之問題而完成者,其主要目的在於,提供一種可容易執行測量時之遮光部的位置調整之測定裝置。 The present invention has been made in order to solve the above problems, and a main object thereof is to provide a measuring apparatus capable of easily performing position adjustment of a light shielding portion at the time of measurement.
請求項記載之發明,為一種測定裝置,其特徵在於具備:工作台,其供複數之發光元件相鄰接地載置;探針,其對上述複數之發光元件中的一個發光元件供給電力,用以使該發光元件發光;遮光部,其於上述探針對上述一個發光元件供給電力時,圍繞該發光元件;移動部,其使上述遮光部於上下方向移動;及彈性部,其設於上述移動部與上述遮光部之間,且於上述探針對上述一個發光元件供給電力之前,上述移動部將上述遮光部朝上述彈性部收縮之方向壓入。 The invention described in the claims is a measuring apparatus comprising: a table for mounting a plurality of light-emitting elements adjacent to a ground; and a probe for supplying electric power to one of the plurality of light-emitting elements; The light-emitting element emits light; the light-shielding portion surrounds the light-emitting element when the probe supplies electric power to the one light-emitting element; the moving portion moves the light-shielding portion in the vertical direction; and the elastic portion is provided on the movement The moving portion presses the light shielding portion in a direction in which the elastic portion contracts in a state between the portion and the light shielding portion before the probe supplies electric power to the one light emitting element.
請求項記載之發明,為一種控制方法,該控制方法係由測定裝置執行,該測定裝置具備:工作台,其供複數之發光元件相鄰接地載置;探針,其對上述複數之發光元件中的一個發光元件供給電力,用以使該發光元件發光;遮光部,其於上述探針對上述一個發光元件供給電力時,圍繞該發光元件;移動部,其使上述遮光部於上下方向移動;及彈性部,其設於上述移動部與上述遮光部之間,其特徵在於包含:位置調整步驟,於上述探針對上述一個發光元件供給電力之前,藉由上述移動部將上述遮光部朝上述彈性部收縮之方向壓入。 The invention described in the claims is a control method which is executed by a measuring device, comprising: a table for mounting a plurality of light-emitting elements adjacent to each other; and a probe for the plurality of light-emitting elements One of the light-emitting elements supplies electric power for causing the light-emitting element to emit light; and the light-shielding portion surrounds the light-emitting element when the probe supplies electric power to the one light-emitting element; and the moving portion moves the light-shielding portion in the vertical direction; And an elastic portion provided between the moving portion and the light blocking portion, comprising: a position adjustment step of moving the light shielding portion toward the elastic portion by the moving portion before the probe supplies electric power to the one light emitting element Pressing in the direction of contraction.
1‧‧‧支撐部 1‧‧‧Support
2‧‧‧導光部 2‧‧‧Light Guide
3‧‧‧探針 3‧‧‧ probe
4‧‧‧工作台 4‧‧‧Workbench
5(5A、5B、5C)‧‧‧LED晶片 5 (5A, 5B, 5C) ‧‧‧LED chips
6‧‧‧遮光部 6‧‧‧Lighting Department
7(7A、7B)‧‧‧彈簧 7 (7A, 7B) ‧ ‧ spring
8‧‧‧反射器 8‧‧‧ reflector
9‧‧‧積分球(光感測器) 9‧‧·Integral ball (light sensor)
10‧‧‧孔 10‧‧‧ hole
11‧‧‧突起部 11‧‧‧Protruding
15‧‧‧控制部 15‧‧‧Control Department
16‧‧‧測量控制部 16‧‧‧Measurement Control Department
17‧‧‧分光器 17‧‧‧ Spectroscope
18‧‧‧缺口 18‧‧‧ gap
20‧‧‧卡止部 20‧‧‧ Carding Department
21‧‧‧光路部 21‧‧‧Light Road Department
22‧‧‧上面 22‧‧‧above
30‧‧‧探針觸針 30‧‧‧ probe stylus
50‧‧‧基板 50‧‧‧Substrate
51‧‧‧電極 51‧‧‧ electrodes
52‧‧‧LED 52‧‧‧LED
60(60A、60B)‧‧‧缺口 60 (60A, 60B) ‧ ‧ gap
61‧‧‧槽部 61‧‧‧Slots
62A、62B‧‧‧凹部 62A, 62B‧‧‧ recess
63‧‧‧光路部 63‧‧‧Light Road Department
64‧‧‧上面 64‧‧‧above
65‧‧‧突起部 65‧‧‧Protruding
66‧‧‧下面 66‧‧‧ below
100‧‧‧測定裝置 100‧‧‧Measurement device
A1‧‧‧寬度 A1‧‧‧Width
W2‧‧‧寬度 W2‧‧‧Width
圖1顯示測定裝置之概略構成。 Fig. 1 shows a schematic configuration of a measuring device.
圖2為顯示LED晶片之側視圖。 2 is a side view showing an LED chip.
圖3為顯示遮光部之俯視圖。 Fig. 3 is a plan view showing a light shielding portion.
圖4(A)及(B)為顯示遮光部之剖視圖。 4(A) and 4(B) are cross-sectional views showing the light shielding portion.
圖5(A)至(C)顯示使探針之檢查針針觸於電極而進行測量時之測量裝置之推移。 5(A) to (C) show the transition of the measuring device when the test needle of the probe is touched to the electrode for measurement.
圖6為變形例之構成之檢查時的測定對象晶片及鄰接晶片之放大圖。 Fig. 6 is an enlarged view of the measurement target wafer and the adjacent wafer at the time of inspection of the configuration of the modification.
圖7為變形例之構成之檢查時的測定對象晶片及鄰接晶片之放大圖。 FIG. 7 is an enlarged view of the measurement target wafer and the adjacent wafer at the time of inspection of the configuration of the modification.
根據本發明之較佳實施形態,測定裝置具備:工作台,其供複數之發光元件相鄰接地載置;探針,其對上述複數之發光元件中的一個發光元件供給電力,用以使該發光元件發光;遮光部,其於上述探針對上述一個發光元件供給電力時,圍繞該發光元件;移動部,其使上述遮光部於上下方向移動;及彈性部,其設於上述移動部與上述遮光部之間,且於上述探針對上述一個發光元件供給電力之前,上述移動部將上述遮光部朝上述彈性部收縮之方向壓入。 According to a preferred embodiment of the present invention, the measuring apparatus includes: a table on which a plurality of light-emitting elements are placed adjacent to each other; and a probe that supplies power to one of the plurality of light-emitting elements to enable the The light-emitting element emits light; the light-shielding portion surrounds the light-emitting element when the probe supplies electric power to the one light-emitting element; the moving portion moves the light-shielding portion in the vertical direction; and the elastic portion is provided on the moving portion and the Before the probes supply electric power to the one light-emitting element, the moving portion presses the light-shielding portion in a direction in which the elastic portion contracts.
上述測定裝置係具備工作台、探針、遮光部、移動部及彈性部。於工作台上相鄰接地載置有複數之發光元件。探針係對複數之發光元件中的一個發光元件供給電力,以使該發光元件發光。遮光部係於探針對測定對象之發光元件供給電力時,圍繞該發光元件。其中,「圍繞發光元件」係指不限圍繞發光元件整體之情況,也包含圍繞發光元件之一部分(例如上面)之情況。移動部係使遮光部於上下方向移動。彈性部係設於移動部與遮光部之間。並且,於探針對測定對象之發光元件供給電力之前,移動部將遮光部朝彈性部收縮之方向壓入。根據此態樣,測定裝置可使遮光部確實 地移動至圍繞測定對象之發光元件的位置,從而可適當地抑制光自測定對象之發光元件洩漏至其他發光元件。 The measuring device includes a table, a probe, a light blocking portion, a moving portion, and an elastic portion. A plurality of light-emitting elements are placed adjacent to the ground on the workbench. The probe system supplies electric power to one of the plurality of light-emitting elements to cause the light-emitting element to emit light. The light shielding unit surrounds the light emitting element when the probe supplies electric power to the light emitting element to be measured. Here, the term "around the light-emitting element" means a case in which the entire light-emitting element is not limited, and also includes a portion (for example, the upper surface) surrounding the light-emitting element. The moving portion moves the light shielding portion in the vertical direction. The elastic portion is provided between the moving portion and the light blocking portion. Further, before the probe supplies electric power to the light-emitting element to be measured, the moving portion presses the light-shielding portion in a direction in which the elastic portion contracts. According to this aspect, the measuring device can make the light shielding portion The ground is moved to the position of the light-emitting element surrounding the measurement target, so that leakage of light from the light-emitting element of the measurement target to other light-emitting elements can be appropriately suppressed.
在此,對具有遮光部之上述測定裝置之功效進行補充說明。例如,於將由藍色LED及螢光體構成,且使螢光體之黃色與LED之藍色一併發出白色光之模擬白色LED作為上述發光元件之情況,若自測定對象之LED洩漏之藍色光照射於鄰接之LED,則鄰接之LED之螢光體會發出黃色光。其結果,變得無法正確地對測定對象之LED之光學特性進行測定。為了正確地測定光學特性,需要對測定對象LED之藍色加以抑制以使該測定對象LED之藍色不會到達鄰接之LED。並且,於鄰接之LED之螢光體有發光之情況下,需要對其發光進行抑制以使其發光不會混入測定對象LED之光學測定系統。考慮到以上狀況,本案之測定裝置具有用以適宜地進行此等抑制之遮光部。 Here, the effect of the above-described measuring device having a light shielding portion will be additionally described. For example, in the case where an analog white LED which is composed of a blue LED and a phosphor and which emits white light together with the yellow color of the phosphor and the blue color of the LED is used as the light-emitting element, the LED leaking from the LED to be measured When the colored light is irradiated to the adjacent LED, the phosphor of the adjacent LED emits yellow light. As a result, it is impossible to accurately measure the optical characteristics of the LED to be measured. In order to accurately measure the optical characteristics, it is necessary to suppress the blue color of the measurement target LED so that the blue color of the measurement target LED does not reach the adjacent LED. Further, when the phosphor of the adjacent LED has light, it is necessary to suppress the light emission so that the light does not enter the optical measurement system of the measurement target LED. In view of the above circumstances, the measuring device of the present invention has a light shielding portion for appropriately performing such suppression.
於上述測定裝置之一態樣中,上述一個發光元件及對應之電極,係設於基板上之相同面,上述遮光部具有用以使自上述一個發光元件發出之光通過之孔、及連接至上述孔之缺口,上述探針通過上述缺口且使針尖露出於上述孔,且藉由上述移動部於上下方向移動,上述缺口係形成為即使於藉由朝上述彈性部收縮之方向壓入上述遮光部而使得上述探針與上述遮光部之相對位置發生變化之情況,仍不會使上述遮光部接觸於上述探針。根據此態樣,測定裝置可一面使探針針觸於測定對象之發光元件,一面使遮光部確實地移動至圍繞測定對象之發光元件的位置。該情況下較佳為,探針係配合保持機構而設計為可彎曲(具有可撓性)之構造,且依此選定材質。 In one aspect of the measuring device, the one light-emitting element and the corresponding electrode are disposed on the same surface of the substrate, and the light-shielding portion has a hole for allowing light emitted from the one light-emitting element to pass through, and is connected to In the notch of the hole, the probe passes through the notch and exposes the needle tip to the hole, and the movement portion moves in the vertical direction, and the notch is formed so as to be pressed into the light-shielding direction by the direction in which the elastic portion contracts. When the relative position of the probe and the light shielding portion is changed, the light shielding portion is not brought into contact with the probe. According to this aspect, the measuring device can reliably move the light shielding portion to the position of the light-emitting element surrounding the measurement target while the probe needle is touched to the light-emitting element to be measured. In this case, it is preferable that the probe is designed to be bendable (having flexibility) in accordance with the holding mechanism, and the material is selected accordingly.
上述測定裝置之一態樣中,上述一個發光元件及對應之電極,係設於基板上之不同面,上述遮光部具有用以使自上述一個發光元件發出之光通過的孔,上述探針係構成為自相對於上述基板而與上述孔為相反側接觸於上述電極。根據此態樣,測定裝置可一面使探針針觸於測定對象之發光元件,一面使遮光部確實地移動至圍繞測定對象之發光元件的位置。 In one aspect of the measuring device, the one light-emitting element and the corresponding electrode are disposed on different surfaces of the substrate, and the light-shielding portion has a hole for passing light emitted from the one light-emitting element, and the probe system is The electrode is in contact with the electrode from the opposite side of the hole with respect to the substrate. According to this aspect, the measuring device can reliably move the light shielding portion to the position of the light-emitting element surrounding the measurement target while the probe needle is touched to the light-emitting element to be measured.
於上述測定裝置之另一態樣中,於上述探針將電力供給於上述一個發光元件之情況,上述遮光部與鄰接於上述一個發光元件之發光元件之上面接觸。根據此態樣,可對鄰接之發光元件之上面進行遮光,適當地減少朝鄰接之發光元件的光之入射。此外,即使於無間隙地排列發光元件之情況,本態樣也可適當地利用。 In another aspect of the measuring device, when the probe supplies electric power to the one light-emitting element, the light-shielding portion is in contact with an upper surface of the light-emitting element adjacent to the one light-emitting element. According to this aspect, the upper surface of the adjacent light-emitting elements can be shielded from light, and the incidence of light toward the adjacent light-emitting elements can be appropriately reduced. Further, this aspect can be suitably utilized even in the case where the light-emitting elements are arranged without a gap.
於上述測定裝置之又一態樣中,於上述移動部設置有用以使上述光朝受光素子之方向通過之光路,於上述光路上設置有隨著朝向上述一個發光元件而前端變細之形狀之反射板。根據此態樣,可使高亮度之光到達受光素子,可提高測定精度。其中,前端變細之形狀係指以下情形,即、將對發出之光進行反射且朝受光手段引導之反射構件配置於發光元件與受光素子(受光手段)之間,並且其內面為以發光中心軸作為軸之旋轉體,且其內面形成為以其內徑於發光元件側較小而隨著靠近受光素子使其內徑逐漸變大之方式連續地變化。 In still another aspect of the measuring apparatus, the moving portion is provided with an optical path for allowing the light to pass in the direction of the light receiving element, and the optical path is provided with a shape that is tapered toward the one light emitting element. Reflective plate. According to this aspect, high-intensity light can be made to reach the photoreceptor, and the measurement accuracy can be improved. The shape in which the tip is tapered is a case where a reflecting member that reflects the emitted light and is guided toward the light receiving means is disposed between the light emitting element and the light receiving element (light receiving means), and the inner surface thereof is illuminated. The central axis serves as a rotating body of the shaft, and the inner surface thereof is formed to continuously change such that the inner diameter thereof is smaller on the side of the light-emitting element and the inner diameter thereof becomes larger as it approaches the photoreceptor.
上述測定裝置之又一態樣中,上述遮光部係白色。藉此,遮光部可藉由高反射率使測定對象之發光元件發出之光反射,從而可提高測定精度。 In still another aspect of the measuring device, the light shielding portion is white. Thereby, the light shielding portion can reflect the light emitted from the light-emitting element to be measured by the high reflectance, thereby improving the measurement accuracy.
上述測定裝置之又一態樣中,上述複數之發光元件, 係由藍色LED及螢光體構成,且使上述螢光體之黃色與上述藍色LED之藍色一併發出白色光之模擬白色LED。如上述,為了正確地測定光學特性,需要對測定對象LED之藍色加以抑制以使該測定對象LED之藍色不會到達鄰接之LED。並且,於鄰接之LED之螢光體有發光之情況下,需要對其發光進行抑制以使其發光不會混入測定對象LED之光學測定系統。本案之遮光部係為了適宜地進行此等抑制而構成。換言之,為了正確地測定光學特性,需要進行抑制以使測定對象LED之藍色不到達鄰接之LED。並且,於鄰接之LED之螢光體有發光之情況下,需要對其發光進行抑制以使其發光不會混入測定對象LED之光學測定系統。本案之遮光部係為了適宜且同時進行此等2個抑制而構成。由於進行2個抑制,因此即使完全不進行朝鄰接之LED之入射遮光、來自鄰接之LED之混入之遮光,也可進行正確之光學特性之測定。藉此,於此態樣中,藉由測定裝置具有遮光部,可適當地減少朝鄰接之發光元件之光的入射,可提高測定精度。 In another aspect of the above measuring device, the plurality of light emitting elements, It is an analog white LED which is composed of a blue LED and a phosphor, and which emits white light together with the yellow color of the phosphor and the blue color of the blue LED. As described above, in order to accurately measure the optical characteristics, it is necessary to suppress the blue color of the measurement target LED so that the blue color of the measurement target LED does not reach the adjacent LED. Further, when the phosphor of the adjacent LED has light, it is necessary to suppress the light emission so that the light does not enter the optical measurement system of the measurement target LED. The light shielding portion of the present invention is configured to appropriately perform such suppression. In other words, in order to accurately measure the optical characteristics, it is necessary to suppress so that the blue color of the measurement target LED does not reach the adjacent LED. Further, when the phosphor of the adjacent LED has light, it is necessary to suppress the light emission so that the light does not enter the optical measurement system of the measurement target LED. The light-shielding portion of the present invention is configured to perform such two suppressions as appropriate. Since the two suppressions are performed, accurate optical characteristics can be measured even if the incidence of the adjacent LEDs is blocked and the light from the adjacent LEDs is blocked. Therefore, in this aspect, since the measuring device has the light shielding portion, the incidence of light toward the adjacent light-emitting elements can be appropriately reduced, and the measurement accuracy can be improved.
本發明之較佳之另一實施形態中,一種控制方法係由測定裝置執行,該測定裝置具備:工作台,其供複數之發光元件相鄰接地載置;探針,其對上述複數之發光元件中的一個發光元件供給電力,用以使該發光元件發光;遮光部,其於上述探針對上述一個發光元件供給電力時,圍繞該發光元件;移動部,其使上述遮光部於上下方向移動;及彈性部,其設於上述移動部與上述遮光部之間,該控制方法包含:位置調整步驟,於上述探針對上述一個發光 元件供給電力之前,藉由上述移動部將上述遮光部朝上述彈性部收縮之方向壓入。測定裝置藉由執行此控制方法,可使遮光部確實地移動至圍繞測定對象之發光元件之位置,適當地抑制光自測定對象之發光元件朝其他之發光元件洩露。 In a preferred embodiment of the present invention, a control method is performed by a measuring device comprising: a table for placing a plurality of light-emitting elements adjacent to a ground; and a probe for the plurality of light-emitting elements One of the light-emitting elements supplies electric power for causing the light-emitting element to emit light; and the light-shielding portion surrounds the light-emitting element when the probe supplies electric power to the one light-emitting element; and the moving portion moves the light-shielding portion in the vertical direction; And an elastic portion provided between the moving portion and the light shielding portion, wherein the control method includes: a position adjustment step of the first pair of light emitted by the probe Before the component supplies electric power, the light shielding portion is pressed in a direction in which the elastic portion is contracted by the moving portion. By performing this control method, the measuring device can reliably move the light-shielding portion to the position of the light-emitting element surrounding the measurement target, and appropriately suppress the light from leaking from the light-emitting element to be measured toward the other light-emitting element.
以下,參照圖式對本發明之較佳實施例進行說明。 Hereinafter, preferred embodiments of the present invention will be described with reference to the drawings.
圖1為本實施例之測定裝置100之概略構成圖。圖1所示之測定裝置100,係對排列於工作台4之LED晶片5之光學特性進行檢查的裝置,其主要具備支撐部1、導光部2、探針3、遮光部6、彈簧7(7A、7B)、反射器8、積分球9、控制部15、測量控制部16、及分光器17。此外,圖2為LED晶片5之側視圖。以下之說明中,亦稱與工作台4垂直之方向為「Z軸方向」,且亦稱與工作台4平行之面為「XY平面」。 Fig. 1 is a schematic configuration diagram of a measuring apparatus 100 of the present embodiment. The measuring device 100 shown in FIG. 1 is an apparatus for inspecting the optical characteristics of the LED chips 5 arranged on the stage 4, and mainly includes a supporting portion 1, a light guiding portion 2, a probe 3, a light blocking portion 6, and a spring 7. (7A, 7B), the reflector 8, the integrating sphere 9, the control unit 15, the measurement control unit 16, and the spectroscope 17. In addition, FIG. 2 is a side view of the LED chip 5. In the following description, the direction perpendicular to the table 4 is also referred to as "Z-axis direction", and the surface parallel to the table 4 is also referred to as "XY plane".
支撐部1係支撐導光部2及遮光部6。具體而言,於支撐部1之中央部設置有大致圓筒狀之孔10,遮光部6嵌入該孔10內。該情況下,形成於支撐部1下部之突起部11,係相對於孔10突出,且藉由與同樣突出之遮光部6之端部卡合而支撐遮光部6。並且,導光部2係自支撐部1之上面嵌入支撐部1之孔10內。該情況下,藉由突出於導光部2之外側之卡止部20卡合於支撐部1之上面,而將導光部2相對於支撐部1進行固定。此外,於支撐部1設置有用以自支撐部1之外側朝支撐部1之孔10內插入探針3之缺口18。支撐部1係基於控制部15之控制而與導光部2一體可於Z軸方向及XY平面移動自如。 The support portion 1 supports the light guiding portion 2 and the light blocking portion 6. Specifically, a substantially cylindrical hole 10 is provided in a central portion of the support portion 1, and the light shielding portion 6 is fitted into the hole 10. In this case, the protruding portion 11 formed on the lower portion of the support portion 1 protrudes from the hole 10, and is supported by the end portion of the light-shielding portion 6 which is also protruded to support the light-shielding portion 6. Further, the light guiding portion 2 is fitted into the hole 10 of the support portion 1 from the upper surface of the support portion 1. In this case, the light guide portion 2 is fixed to the support portion 1 by the engagement portion 20 protruding from the outer side of the light guide portion 2 being engaged with the upper surface of the support portion 1. Further, the support portion 1 is provided with a notch 18 for inserting the probe 3 into the hole 10 from the outer side of the support portion 1 toward the support portion 1. The support unit 1 is movable integrally with the light guiding unit 2 in the Z-axis direction and the XY plane based on the control of the control unit 15 .
導光部2係具有用以使自LED晶片5發出之光朝光感測器9通過之光路部21。光路部21係沿Z軸方向形成。此外,沿形成光路部21之導光部2的壁面設置有反射器8。支撐部1及導光部2係本發明之「移動部」之一例。 The light guiding unit 2 has an optical path portion 21 for allowing light emitted from the LED chip 5 to pass through the photo sensor 9. The optical path portion 21 is formed along the Z-axis direction. Further, a reflector 8 is provided along the wall surface of the light guiding portion 2 forming the optical path portion 21. The support unit 1 and the light guide unit 2 are examples of the “moving unit” of the present invention.
探針3具有藉由針觸於LED晶片5之電極而使LED晶片5成為通電狀態之探針觸針30。探針3係自支撐部1外插入缺口18及缺口60,且探針觸針30露出於遮光部6之光路部63。並且,探針3係設計為具有可撓性之構造,且有選定材質。再者,探針觸針30係於光路部63內朝工作台4之方向彎折。藉由設為彎折之構造,作成可增加探針本身之可撓牲之構造。於將Z軸方向設為0度時,彎折之角度,針尖宜為20度±10度,針尖以下宜為70.度±10度。探針3係相對於支撐部1而被固定,與支撐部1及導光部2一併移動於Z軸方向及XY平面。 The probe 3 has a probe stylus 30 that causes the LED chip 5 to be energized by a needle contacting the electrode of the LED chip 5. The probe 3 is inserted into the notch 18 and the notch 60 from the outside of the support portion 1, and the probe contact pin 30 is exposed to the optical path portion 63 of the light shielding portion 6. Further, the probe 3 is designed to have a flexible structure and has a selected material. Further, the probe stylus 30 is bent in the direction of the table 4 in the optical path portion 63. By making it a bent structure, it is possible to increase the flexibility of the probe itself. When the Z-axis direction is set to 0 degrees, the angle of the bend should be 20 degrees ± 10 degrees, and the tip of the needle should be 70 degrees ± 10 degrees. The probe 3 is fixed to the support portion 1 and moves together with the support portion 1 and the light guide portion 2 in the Z-axis direction and the XY plane.
工作台4例如為具備未圖示之馬達之圓形工作台,其基於控制部15之控制,於與工作台4平行之面內及上下方向移動自如。LED晶片5係以大致等間隔呈格子狀排列於大致圓形之工作台4,如圖2所示,其具有基板50、電極51及LED52。圖2之例中,於基板50之上面排列有電極51與LED52。電極51之厚度係較LED52之厚度薄。 The table 4 is, for example, a circular table including a motor (not shown), and is movable in a plane parallel to the table 4 and in the vertical direction based on the control of the control unit 15. The LED chips 5 are arranged in a lattice shape at substantially equal intervals on a substantially circular table 4, and have a substrate 50, electrodes 51, and LEDs 52 as shown in FIG. In the example of FIG. 2, electrodes 51 and LEDs 52 are arranged on the upper surface of the substrate 50. The thickness of the electrode 51 is thinner than the thickness of the LED 52.
於使探針觸針30針觸於測定對象之LED晶片5之電極51上而使LED52發光之測定時,遮光部6係於測定對象之LED晶片5之四周進行朝鄰接之LED晶片5之遮光。遮光部6係光反射率高之白色樹脂等之非穿透構件。遮光部6嵌入支撐部1之孔10內,且於中心部分沿Z軸方向設置有圓筒狀之孔即光路部63。此 外,於遮光部6設置有用以插入探針3之缺口60。如後述,遮光部6係構成為於被朝工作台4之方向壓入之情況下,相對於支撐部1可自由地滑動與導光部2下面之距離(參照寬度A1)。關於遮光部6之構造,於[遮光部之構成]之一欄詳細地進行說明。 When the probe stylus 30 is touched on the electrode 51 of the LED chip 5 to be measured to measure the light emission of the LED 52, the light shielding portion 6 is shielded from the adjacent LED chip 5 by the periphery of the LED wafer 5 to be measured. . The light shielding portion 6 is a non-penetrating member such as a white resin having a high light reflectance. The light shielding portion 6 is fitted into the hole 10 of the support portion 1, and an optical path portion 63 which is a cylindrical hole is provided in the central portion in the Z-axis direction. this Further, a notch 60 for inserting the probe 3 is provided in the light shielding portion 6. As will be described later, the light shielding portion 6 is configured to be slidably movable to the lower surface of the light guiding portion 2 with respect to the support portion 1 when the pressing portion 6 is pressed in the direction of the table 4 (see the width A1). The structure of the light shielding portion 6 will be described in detail in one of the columns [configuration of the light shielding portion].
彈簧7(7A、7B)係存在於夾在導光部2之下面與遮光部6之上面64之間的位置,一端嵌入導光部2,另一端嵌入遮光部6。並且,彈簧7係根據朝Z軸方向之壓力而伸縮,對導光部2之下面與遮光部6之上面64的距離(參照寬度A1)進行調整。彈簧7具有不會藉由測定時將遮光部6朝工作台4之方向壓入時的壓力,而使LED晶片5產生破損之強度。再者,彈簧7餘圖1中僅圖示彈簧7A、7B,但也可設置3個以上。本案中,雖未圖示,以等分割(等分配)設置4個彈簧。彈簧7係本發明之「彈性部」之一例。 The springs 7 (7A, 7B) are present between the lower surface of the light guiding portion 2 and the upper surface 64 of the light shielding portion 6, and one end is fitted into the light guiding portion 2, and the other end is fitted into the light shielding portion 6. Further, the spring 7 expands and contracts according to the pressure in the Z-axis direction, and adjusts the distance between the lower surface of the light guiding portion 2 and the upper surface 64 of the light shielding portion 6 (see the width A1). The spring 7 has a strength that the LED wafer 5 is not damaged by the pressure when the light shielding portion 6 is pressed in the direction of the table 4 during measurement. Further, although only the springs 7A and 7B are illustrated in Fig. 1 in the spring 7, the number of the springs 7 may be three or more. In the present case, although not shown, four springs are provided in equal division (equal distribution). The spring 7 is an example of the "elastic portion" of the present invention.
若增大彈簧7之負載,於將遮光部6朝工作台4之方向壓入時會產生使LED52破損等之不適。若減弱而將遮光部6壓入之後,產生返不會原位置等之不合適。因此,彈簧數×負載之合計,相對於設計之壓入量,宜於30g(0.3N)f~300gf(3N)之範圍內。本案中,壓入量係設定為0.3mm。 When the load of the spring 7 is increased, when the light shielding portion 6 is pushed in the direction of the table 4, discomfort such as breakage of the LED 52 occurs. If the light shielding portion 6 is pressed after being weakened, it is not suitable for returning to the original position or the like. Therefore, the total number of springs x the load is preferably in the range of 30 g (0.3 N) f to 300 gf (3 N) with respect to the designed press-in amount. In this case, the press-in amount was set to 0.3 mm.
反射器8係對LED晶片5發出之光進行反射而使光到達積分球9。反射器8具有將前端部分切除之圓錐形狀,隨著朝向工作台4其前端變細。此外,反射器8之上端,係沿導光部2之上面22彎曲而對上面22進行卡止,反射器8之下端,藉由形成於遮光部6之槽部61而被限制。反射器8係本發明之「反射板」之一例。 The reflector 8 reflects the light emitted from the LED chip 5 to cause the light to reach the integrating sphere 9. The reflector 8 has a conical shape in which the front end portion is cut, and the front end thereof is tapered toward the table 4. Further, the upper end of the reflector 8 is bent along the upper surface 22 of the light guiding portion 2 to lock the upper surface 22, and the lower end of the reflector 8 is restricted by the groove portion 61 formed in the light shielding portion 6. The reflector 8 is an example of the "reflector" of the present invention.
測量控制部16經由探針3之探針觸針30對LED52 施加電壓,以使電流流通。藉此,LED52進行發光。 The measurement control unit 16 pairs the LEDs 52 via the probe stylus 30 of the probe 3 A voltage is applied to allow current to flow. Thereby, the LED 52 emits light.
積分球9接收LED晶片5之發光。積分球9利用光纖將接收之光之一部分朝分光器17引導。藉由將分光器17接受之光按每個波長轉換為電信號,進行LED晶片5之光學特性之測定。該情況下,自LED52發出之光,為直接到達積分球9之光、及通過光路部63被反射器8反射而到達積分球9之光之合計。 The integrating sphere 9 receives the illumination of the LED chip 5. The integrating sphere 9 uses an optical fiber to direct a portion of the received light toward the beam splitter 17. The optical characteristics of the LED wafer 5 are measured by converting the light received by the spectroscope 17 into an electrical signal for each wavelength. In this case, the light emitted from the LED 52 is the sum of the light that directly reaches the integrating sphere 9 and the light that is reflected by the reflector 8 through the optical path portion 63 and reaches the integrating sphere 9.
其次,參照圖3及圖4,對遮光部6之詳細之構成具體地進行說明。 Next, the detailed configuration of the light shielding portion 6 will be specifically described with reference to Figs. 3 and 4 .
圖3為遮光部6之俯視圖。圖3之例中,於遮光部6之上面64設置有用以使探針3自遮光部6之外部插入光路部63之缺口60A、60B。該情況下,探針3係通過缺口60A、60B之任一者(本實施例中為缺口60A)或雙方,以使針尖於光路部63露出。此外,俯視時,槽部61係形成為以光路部63作為中心之圓形形狀,缺口60A、60B部分被切開。如圖1之說明中所述,前端變細之圓筒狀的反射器8之端部,係以浮起之狀態嵌入槽部61內。此外,如後述,於遮光部6之上面設置有用以嵌入彈簧7B之一端之凹部62B。 FIG. 3 is a plan view of the light shielding portion 6. In the example of FIG. 3, notches 60A and 60B for inserting the probe 3 into the optical path portion 63 from the outside of the light shielding portion 6 are provided on the upper surface 64 of the light shielding portion 6. In this case, the probe 3 passes through either of the notches 60A and 60B (the notch 60A in the present embodiment) or both, so that the needle tip is exposed to the optical path portion 63. Further, in plan view, the groove portion 61 is formed in a circular shape with the optical path portion 63 as a center, and the notches 60A, 60B are partially cut away. As described in the description of Fig. 1, the end portion of the cylindrical reflector 8 whose tip end is tapered is fitted into the groove portion 61 in a floating state. Further, as will be described later, a concave portion 62B for fitting one end of the spring 7B is provided on the upper surface of the light shielding portion 6.
圖4(A)為顯示遮光部6之A-A線剖視圖。如圖4(A)所示,於以不通過缺口60之截面將遮光部6切斷之情況下,切斷面通過設於中心部分之通路即光路部63、及設為規定深度之槽部61。在此,槽部61宜適當地設計為滿足以下條件之深度,即、即使於遮光部6被朝工作台4之方向壓入時相對於支撐部1而於Z軸上滑動之情況,仍不會使反射器8之下端接觸。 4(A) is a cross-sectional view taken along line A-A showing the light shielding portion 6. As shown in FIG. 4(A), when the light shielding portion 6 is cut in a cross section that does not pass through the notch 60, the cut surface passes through the optical path portion 63 which is a passage provided at the center portion, and the groove portion which has a predetermined depth. 61. Here, the groove portion 61 is preferably designed to have a depth that satisfies the following condition, that is, even if the light shielding portion 6 is pressed in the direction toward the table 4 and slides on the Z axis with respect to the support portion 1, The lower end of the reflector 8 is brought into contact.
圖4(B)為顯示遮光部6之B-B線之剖視圖。如圖4(B)所示,於以通過缺口60A之截面將遮光部6切斷之情況下,相當於缺口60A之部分成為空洞。在此,缺口60A係於Z軸方向上設計為較插入之探針3之粗細充分大之寬度(例如圖1之箭頭A1之大小的寬度),使得即使於遮光部6被朝工作台4之方向壓入時相對於支撐部1而於Z軸上滑動之情況,探針3仍不會接觸於遮光部6。此外,於缺口60A設置有用以嵌入彈簧7A之一端的凹部62A。同樣地,於相對於光路部63而與凹部62A對稱之位置設置有用以嵌入彈簧7B之一端的凹部62B。 4(B) is a cross-sectional view showing the line B-B of the light shielding portion 6. As shown in FIG. 4(B), when the light shielding portion 6 is cut by the cross section of the notch 60A, the portion corresponding to the notch 60A becomes a cavity. Here, the notch 60A is designed to have a width sufficiently larger than the thickness of the inserted probe 3 in the Z-axis direction (for example, the width of the arrow A1 of FIG. 1), so that even if the light shielding portion 6 is directed toward the table 4 When the direction is pushed in with respect to the support portion 1 and slid on the Z axis, the probe 3 does not come into contact with the light shielding portion 6. Further, a recess 62A for inserting one end of the spring 7A is provided in the notch 60A. Similarly, a recess 62B for fitting one end of the spring 7B is provided at a position symmetrical with respect to the optical path portion 63 with respect to the concave portion 62A.
此外,為了更正確地進行測定對象之LED52之光學測定,較佳為更多地對該LED52之發光進行測定,因此,遮光部6係由在可視光頻帶中反射率超過70%之材料構成。遮光部6之材料,係選擇材料表面之反射率高且透射率小之材料。遮光部6之表面宜為白色。遮光部6之光路部63之內壁,既可為正反射,也可為擴散反射。光路部63之內壁,也可與反射器8同樣為前端變細之狀態,以極力將反射之光朝測定系統導引。 Further, in order to more accurately measure the optical measurement of the LED 52 to be measured, it is preferable to measure the light emission of the LED 52 more. Therefore, the light shielding portion 6 is made of a material having a reflectance of more than 70% in the visible light band. The material of the light shielding portion 6 is a material that has a high reflectance on the surface of the material and a small transmittance. The surface of the light shielding portion 6 is preferably white. The inner wall of the light path portion 63 of the light shielding portion 6 may be either regular reflection or diffuse reflection. Similarly to the reflector 8, the inner wall of the optical path portion 63 may be in a state where the front end is tapered, and the reflected light is guided to the measurement system as much as possible.
其次,對在LED晶片5之檢查時,使探針觸針30針觸於電極51時所執行之遮光部6的壓入動作進行說明。 Next, the press-fitting operation of the light-shielding portion 6 performed when the probe stylus 30 is touched to the electrode 51 at the time of inspection of the LED wafer 5 will be described.
圖5(A)顯示使支撐部1朝工作台4之方向移動而使支撐部1與工作台4靠近之情況的測定裝置100。以下,對進行與LED晶片5B、5C鄰接之LED晶片5A(亦稱「測定對象晶片」)之檢查的情況進行說明。 FIG. 5(A) shows the measuring device 100 in a case where the support portion 1 is moved in the direction of the table 4 and the support portion 1 is brought close to the table 4. Hereinafter, a case of performing inspection of the LED chip 5A (also referred to as "measurement target wafer") adjacent to the LED chips 5B and 5C will be described.
該情況下,首先,控制部15於對在XY平面之支撐 部1或工作台4之位置進行調整以使光路部63與測定對象之LED晶片5A在XY平面上重疊之後,使支撐部1朝工作台4之方向移動。並且,圖5(A)之例中,支撐部1與工作台4靠近之結果,遮光部6之下面66接觸於與測定對象晶片5A鄰接之LED晶片5B、5C(亦簡稱為「鄰接晶片」)之LED52的上面。 In this case, first, the control unit 15 supports the pair in the XY plane. The position of the portion 1 or the table 4 is adjusted so that the optical path portion 63 overlaps the LED wafer 5A to be measured on the XY plane, and then the support portion 1 is moved in the direction of the table 4. In the example of FIG. 5(A), the support portion 1 is brought close to the table 4, and the lower surface 66 of the light shielding portion 6 is in contact with the LED chips 5B and 5C adjacent to the measurement target wafer 5A (also referred to simply as "adjacent wafer"). ) The top of LED52.
圖5(B)顯示使支撐部1自圖5(A)之狀態朝工作台4之方向再移動規定寬度「W2」而使探針觸針30針觸於LED晶片5A之電極51的情況之測定裝置100。此外,圖5(C)為圖5(B)之狀態下之LED晶片5A~5C之放大圖。 5(B) shows a case where the support portion 1 is moved by a predetermined width "W2" from the state of FIG. 5(A) toward the table 4, and the probe stylus 30 is brought into the electrode 51 of the LED chip 5A. The measuring device 100. In addition, FIG. 5(C) is an enlarged view of the LED chips 5A to 5C in the state of FIG. 5(B).
於遮光部6之下面66與鄰接晶片5B、5C之LED52的上面面接觸之狀態下,於支撐部1與工作台4之距離縮小之情況下,會對遮光部6施加藉由鄰接晶片5B、5C之LED52而上推之壓力。其結果,遮光部6相對於支撐部1朝上方滑動寬度W2。該情況下,彈簧7係於收縮寬度W2之狀態下靜止。再者,較佳為,遮光部6係由樹脂等形成,且將具有適宜之強度之彈簧作為彈簧7加以使用,使得於遮光部6之下面66之朝鄰接晶片之LED52的接觸時或壓入時不會損傷LED52之發光面。 In a state where the lower surface 66 of the light shielding portion 6 is in contact with the upper surface of the LEDs 52 adjacent to the wafers 5B and 5C, when the distance between the support portion 1 and the table 4 is reduced, the light shielding portion 6 is applied by the adjacent wafer 5B, 5C LED52 and push up the pressure. As a result, the light shielding portion 6 slides the width W2 upward with respect to the support portion 1. In this case, the spring 7 is stationary in a state of being contracted by the width W2. Further, it is preferable that the light shielding portion 6 is formed of a resin or the like, and a spring having a suitable strength is used as the spring 7 so that the contact of the lower surface 66 of the light shielding portion 6 toward the LED 52 adjacent to the wafer or press-in The light emitting surface of the LED 52 is not damaged.
此外,圖5(B)中,由於探針觸針30針觸於測定對象晶片5A之電極51,因此,測定對象晶片5A之LED52進行發光。此時,如圖5(B)、(C)所示,遮光部6面接觸於各鄰接晶片之LED52的上面,使得測定對象晶片5A之LED52之光不到達各鄰接晶片之LED52的上面,或即使到達,其量也非常少。藉此,遮光部6可適當地防止LED晶片5A發出之光入射於各鄰接晶片之LED52的上面。 In addition, in FIG. 5(B), since the probe stylus 30 is in contact with the electrode 51 of the measurement target wafer 5A, the LED 52 of the measurement target wafer 5A emits light. At this time, as shown in FIGS. 5(B) and (C), the light shielding portion 6 is in surface contact with the upper surface of the LEDs 52 of the adjacent wafers, so that the light of the LEDs 52 of the measurement target wafer 5A does not reach the upper surface of the LEDs 52 of the adjacent wafers, or Even if it arrives, the amount is very small. Thereby, the light shielding portion 6 can appropriately prevent the light emitted from the LED wafer 5A from being incident on the upper surface of the LEDs 52 of the adjacent wafers.
此外,缺口60A具有較探針3之粗細更大之Z軸方向之寬度,使得即使於遮光部6相對於支撐部1而於Z軸上滑動之情況,探針觸針30仍不接觸於遮光部6,並且,藉由將探針觸針30針觸於電極51且壓入而於探針觸針30產生彎曲也不會接觸於反射器8。藉此,即使於遮光部6相對於支撐部1而於Z軸上滑動之情況,探針觸針30仍不接觸於遮光部6,不會影響探針觸針30之位置調整。此外,於遮光部6相對於支撐部1不滑動之圖5(A)之狀態下,嵌入於槽部61之反射器8之下端,即使被壓入了預先設定之寬度W2,仍相對於槽部61之底部浮起。藉此,即使於相對於遮光部6之支撐部1滑動之圖5(B)所示之狀態,反射器8之下端與遮光部6也不接觸,不會妨礙遮光部6之移動。 Further, the notch 60A has a width larger than the thickness of the probe 3 in the Z-axis direction, so that even if the light shielding portion 6 slides on the Z-axis with respect to the support portion 1, the probe stylus 30 is not in contact with the light shielding. The portion 6, and by bending the probe stylus 30 to the electrode 51 and being pressed in, causes the probe stylus 30 to bend and does not contact the reflector 8. Thereby, even if the light shielding portion 6 slides on the Z axis with respect to the support portion 1, the probe stylus 30 does not contact the light shielding portion 6, and does not affect the positional adjustment of the probe stylus 30. Further, in the state of FIG. 5(A) in which the light shielding portion 6 does not slide with respect to the support portion 1, the lower end of the reflector 8 fitted in the groove portion 61 is opposed to the groove even if it is pressed into the predetermined width W2. The bottom of the portion 61 floats. Thereby, even in the state shown in FIG. 5(B) which slides with respect to the support part 1 of the light-shielding part 6, the lower end of the reflector 8 does not contact the light-shielding part 6, and does not interfere with the movement of the light-shielding part 6.
在此,對設置遮光部6之功效進行補充說明。 Here, a supplementary explanation will be given of the effect of providing the light shielding portion 6.
一般而言,於LED晶片5為包含螢光體之白色LED(模擬白色LED)之情況,若測定對象晶片於測定時發出之藍色光入射於鄰接晶片之LED52,則鄰接晶片之LED52之螢光體吸收該入射光,變為發出黃色光。該情況下,由於鄰接晶片之LED52發出之黃色光混入而入射於積分球9,因此,控制部15變得無法對測定對象晶片進行正確之測定。 In general, when the LED chip 5 is a white LED (analog white LED) including a phosphor, if the blue light emitted by the measurement target wafer is incident on the LED 52 of the adjacent wafer, the LED 52 of the adjacent wafer is fluorescent. The body absorbs the incident light and becomes yellow light. In this case, since the yellow light emitted from the LEDs 52 adjacent to the wafer is mixed and incident on the integrating sphere 9, the control unit 15 cannot perform accurate measurement on the wafer to be measured.
考慮到以上狀況,本實施例中,測定裝置100具有遮光部6,且於探針觸針30針觸於測定對象晶片之LED52之狀態下,使鄰接晶片之LED52之上面與遮光部6之下面66面接觸。藉此,可適當地抑制測定對象晶片發出光入射於鄰接晶片之LED52之上面。再者,本實施例中,測定對象晶片之射出光有可能入射於鄰接晶片之LED52之側面,但該側面之面積,係與藉由遮光部6遮蔽 之LED52之上面的面積比較而能忽視之程度之大小。藉此,根據本實施例之測定裝置100,可適當地提高測定對象晶片之測定精度。此外,於使鄰接晶片之LED52之上面與遮光部6之下面66面接觸之態樣,即使為於工作台4上無間隙地排列LED晶片5之情況,仍能實現對鄰接晶片之LED52之遮光。並且,根據本實施例之測定裝置100,即使於鄰接晶片之LED52之螢光體有發光之情況,仍可藉由遮光部6抑制此發光不混入測定對象晶片之LED52之光學測定系統。如此,本案之遮光部6,可抑制測定對象晶片發出之光入射於鄰接晶片,並可抑制來自鄰接晶片之光混入光學測定系統。由於遮光部6同時進行此等2個抑制,因此,測定裝置100即使不完全進行自測定晶片朝鄰接晶片入射遮光、自鄰接晶片朝光學測定系統之光的混入之遮光,仍可進行正確之光學特性之測定。 In view of the above, in the present embodiment, the measuring device 100 has the light shielding portion 6, and the upper surface of the LED 52 adjacent to the wafer and the lower surface of the light shielding portion 6 are provided in a state where the probe stylus 30 is touched to the LED 52 of the measurement target wafer. 66 face contact. Thereby, it is possible to appropriately suppress the light emitted from the wafer to be measured from being incident on the upper surface of the LED 52 adjacent to the wafer. Further, in the present embodiment, the light emitted from the measurement target wafer may be incident on the side surface of the LED 52 adjacent to the wafer, but the area of the side surface is shielded by the light shielding portion 6. The area above the LED 52 is comparable and can be ignored. As a result, according to the measuring apparatus 100 of the present embodiment, the measurement accuracy of the wafer to be measured can be appropriately increased. In addition, in the case where the upper surface of the LED 52 of the adjacent wafer is in surface contact with the lower surface 66 of the light shielding portion 6, even if the LED wafer 5 is arranged without any gap on the table 4, the light shielding of the LED 52 adjacent to the wafer can be achieved. . Further, according to the measuring apparatus 100 of the present embodiment, even when the phosphor of the LED 52 adjacent to the wafer emits light, the light-shielding portion 6 can suppress the optical measurement system in which the light-emitting portion is not mixed into the LED 52 of the measurement target wafer. As described above, the light shielding portion 6 of the present invention can suppress the light emitted from the wafer to be measured from entering the adjacent wafer, and can suppress the light from the adjacent wafer from entering the optical measurement system. Since the light-shielding portion 6 performs the above-described two suppressions at the same time, the measurement device 100 can perform correct optics even if the light is not completely incident on the wafer from the measurement wafer and the light from the adjacent wafer is mixed into the optical measurement system. Determination of characteristics.
此外,於遮光部6與導光部2之間設置有伸縮自如之複數個彈簧7,測定裝置100係構成為可調整遮光部2與支撐部1及導光部2之Z軸方向上的相對位置。藉此,測定裝置100可於與鄰接晶片之LED52之上面確實地面接觸而壓入遮光部6的狀態下,使探針觸針30針觸於測定對象晶片之電極51。此外,於測定結束後使支撐部1朝Z軸方向移動而使支撐部1與工作台4分離之情況下,遮光部6藉由彈簧7之復原力,相對於支撐部1朝下方滑動,且於與支撐部1之突起部11接觸之位置再度靜止。 Further, a plurality of springs 7 that are expandable and contractible are provided between the light shielding portion 6 and the light guiding portion 2, and the measuring device 100 is configured to adjust the relative relationship between the light shielding portion 2 and the support portion 1 and the light guiding portion 2 in the Z-axis direction. position. As a result, the measurement device 100 can contact the probe stylus 30 with the electrode 51 of the measurement target wafer in a state where the light-receiving portion 6 is pressed into contact with the upper surface of the LED 52 of the adjacent wafer. Further, when the support portion 1 is moved in the Z-axis direction after the measurement is completed and the support portion 1 is separated from the table 4, the light-shielding portion 6 slides downward with respect to the support portion 1 by the restoring force of the spring 7, and It is again stationary at a position in contact with the projection 11 of the support portion 1.
如以上說明,本實施例之測定裝置100,具有支撐部1、導光部2、探針3、工作台4、遮光部6及彈簧7。於工作台4上相鄰接地載置有複數之LED晶片5。探針3係對複數之LED晶片5中的、測定對象晶片供給電力而使該測定對象晶片之LED52 發光。於探針3對測定對象晶片供給電力之情況,遮光部6圍繞該測定對象晶片。支撐部1及導光部2係使遮光部6朝Z軸方向移動。彈簧7設於導光部2與遮光部6之間。並且,於探針3對測定對象晶片供給電力之前,支撐部1將遮光部6朝彈簧7收縮之方向壓入。藉由此態樣,測定裝置100可確實地使遮光部6朝圍繞測定對象晶片之位置移動,可適當地抑制光自測定對象晶片洩漏至鄰接晶片。 As described above, the measurement device 100 of the present embodiment includes the support portion 1, the light guide portion 2, the probe 3, the table 4, the light shielding portion 6, and the spring 7. A plurality of LED chips 5 are placed adjacent to the ground on the stage 4. The probe 3 supplies electric power to the measurement target wafer in the plurality of LED chips 5, and causes the LED 52 of the measurement target wafer. Glowing. When the probe 3 supplies electric power to the measurement target wafer, the light shielding portion 6 surrounds the measurement target wafer. The support portion 1 and the light guiding portion 2 move the light shielding portion 6 in the Z-axis direction. The spring 7 is provided between the light guiding portion 2 and the light shielding portion 6. Further, before the probe 3 supplies electric power to the measurement target wafer, the support portion 1 presses the light shielding portion 6 in the direction in which the spring 7 contracts. In this way, the measuring device 100 can reliably move the light shielding portion 6 toward the position around the measurement target wafer, and can appropriately suppress leakage of light from the measurement target wafer to the adjacent wafer.
以下,對適合上述實施例之各變形例進行說明。再者,此等各變形例可任意組合地應用於上述實施例。 Hereinafter, each modification suitable for the above embodiment will be described. Furthermore, each of these modifications can be applied to the above embodiment arbitrarily in combination.
圖2所示之LED晶片5,係於基板50之上面並排設置有電極51及LED52。也可取代此,將電極51及LED52形成於基板50之表背面。 The LED chip 5 shown in FIG. 2 is provided with electrodes 51 and LEDs 52 arranged in parallel on the substrate 50. Instead of this, the electrode 51 and the LED 52 may be formed on the front and back surfaces of the substrate 50.
圖6為顯示本變形例之測定時之測定對象晶片及鄰接晶片之放大圖。圖6之例中,於各LED晶片5之基板50的背面形成有電極51,探針觸針30係自LED晶片5之下方與電極51接觸。該情況下,例如,未圖示之工作台4支撐各LED晶片5,使得各LED晶片5之電極51部分露出。 Fig. 6 is an enlarged view showing a wafer to be measured and an adjacent wafer in the measurement of the present modification. In the example of FIG. 6, the electrode 51 is formed on the back surface of the substrate 50 of each LED wafer 5, and the probe contact 30 is in contact with the electrode 51 from below the LED wafer 5. In this case, for example, the table 4 (not shown) supports the LED chips 5 so that the electrodes 51 of the LED chips 5 are partially exposed.
圖6之例中,探針3係設於較LED晶片5靠下方,自LED晶片5之下方針觸於電極51。藉此,該情況下,由於探針3不通過遮光部6內,因此遮光部6不具有缺口60。 In the example of FIG. 6, the probe 3 is disposed below the LED chip 5, and is guided from the LED wafer 5 to the electrode 51. Therefore, in this case, since the probe 3 does not pass through the inside of the light shielding portion 6, the light shielding portion 6 does not have the notch 60.
此外,測定時,遮光部6之下面66係於測定對象晶片之LED52與鄰接晶片之LED52之間,與基板50之上面接觸。該情況下,測定對象晶片之LED52發出之光之光路,係由遮光部6 之光路部63所限制,因而LED52之出射光,不到達鄰接晶片之LED52。藉此,本變形例中,遮光部6可適當地抑制測定對象晶片5A發出之光入射於鄰接晶片之LED52。再者,也可取代圖6,與上述實施例同樣,構成為使鄰接晶片之LED52之上面與遮光部6之下面66對向,且於測定時使這些部位面接觸。 Further, at the time of measurement, the lower surface 66 of the light shielding portion 6 is between the LED 52 of the measurement target wafer and the LED 52 of the adjacent wafer, and is in contact with the upper surface of the substrate 50. In this case, the light path of the light emitted from the LED 52 of the target wafer is determined by the light shielding portion 6 The light path portion 63 is limited so that the light emitted from the LED 52 does not reach the LED 52 adjacent to the wafer. Therefore, in the present modification, the light shielding portion 6 can appropriately suppress the light emitted from the measurement target wafer 5A from being incident on the LEDs 52 adjacent to the wafer. Alternatively, instead of the above-described embodiment, the upper surface of the LED 52 adjacent to the wafer may be opposed to the lower surface 66 of the light shielding portion 6, and these portions may be brought into surface contact during measurement.
本發明可適用之遮光部6,於測定對象晶片之測定時,不限於接觸於鄰接晶片之LED52的上面之態樣。 The light-shielding portion 6 to which the present invention is applicable is not limited to the contact with the upper surface of the LED 52 of the adjacent wafer when the measurement target wafer is measured.
圖7為顯示本變形例之測定時之測定對象晶片及鄰接晶片之放大圖。圖7之例中,遮光部6設置有測定時圍繞測定對象晶片之突起部65。突起部65係自遮光部6之下面66突起,且形成於與測定對象晶片與鄰接晶片之間的間隙對向之位置。並且,突起部65係於探針觸針30之針觸時,插入測定對象晶片與鄰接晶片之間的間隙,遮蔽來自測定對象晶片之LED52之出射光自鄰接晶片的LED52的側面入射之光。如此,圖6之例中,藉由遮光部6具有突起部65,可更適當地遮蔽自測定對象晶片之LED52朝鄰接晶片之LED52的光之入射。再者,圖6中,LED52被分割,且於測定對象晶片與鄰接晶片之間形成有間隙,但不限於被分割。也可取代此,於1片基板50上排列複數之LED52。 FIG. 7 is an enlarged view showing the measurement target wafer and the adjacent wafer in the measurement of the present modification. In the example of Fig. 7, the light shielding portion 6 is provided with a projection portion 65 that surrounds the measurement target wafer during measurement. The protruding portion 65 protrudes from the lower surface 66 of the light shielding portion 6, and is formed at a position facing the gap between the measurement target wafer and the adjacent wafer. When the protrusion 65 is attached to the probe stylus 30, the gap between the measurement target wafer and the adjacent wafer is inserted, and the light emitted from the LED 52 of the measurement target wafer is blocked from the side surface of the LED 52 of the adjacent wafer. As described above, in the example of FIG. 6, since the light shielding portion 6 has the projection portion 65, the incidence of light from the LED 52 of the measurement target wafer toward the LED 52 adjacent to the wafer can be more appropriately shielded. In addition, in FIG. 6, the LED 52 is divided, and a gap is formed between the measurement target wafer and the adjacent wafer, but it is not limited to being divided. Instead of this, a plurality of LEDs 52 may be arranged on one substrate 50.
1‧‧‧支撐部 1‧‧‧Support
2‧‧‧導光部 2‧‧‧Light Guide
3‧‧‧探針 3‧‧‧ probe
4‧‧‧工作台 4‧‧‧Workbench
5‧‧‧LED晶片 5‧‧‧LED chip
6‧‧‧遮光部 6‧‧‧Lighting Department
7(7A、7B)‧‧‧彈簧 7 (7A, 7B) ‧ ‧ spring
8‧‧‧反射器 8‧‧‧ reflector
9‧‧‧積分球(光感測器) 9‧‧·Integral ball (light sensor)
10‧‧‧孔 10‧‧‧ hole
11‧‧‧突起部 11‧‧‧Protruding
15‧‧‧控制部 15‧‧‧Control Department
16‧‧‧測量控制部 16‧‧‧Measurement Control Department
17‧‧‧分光器 17‧‧‧ Spectroscope
18‧‧‧缺口 18‧‧‧ gap
20‧‧‧卡止部 20‧‧‧ Carding Department
21‧‧‧光路部 21‧‧‧Light Road Department
22‧‧‧上面 22‧‧‧above
30‧‧‧探針觸針 30‧‧‧ probe stylus
60‧‧‧缺口 60‧‧‧ gap
61‧‧‧槽部 61‧‧‧Slots
63‧‧‧光路部 63‧‧‧Light Road Department
100‧‧‧測定裝置 100‧‧‧Measurement device
A1‧‧‧寬度 A1‧‧‧Width
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TWM414583U (en) * | 2011-05-10 | 2011-10-21 | Guan-Nan Chen | Integrating sphere close to an object to be measured |
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TWM414583U (en) * | 2011-05-10 | 2011-10-21 | Guan-Nan Chen | Integrating sphere close to an object to be measured |
CN202869647U (en) * | 2012-09-26 | 2013-04-10 | 合肥彩虹蓝光科技有限公司 | Integrating sphere |
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