JP2016184607A - Evaluation device and evaluation method of semiconductor light-emitting element - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an evaluation device of a semiconductor light-emitting element capable of evaluating the optical characteristics with high accuracy, regardless of the wavelength region of the light emitted from the semiconductor light-emitting element.SOLUTION: An evaluation device of a semiconductor light-emitting element includes: a stage 6 having a wafer suction part 3 formed in the center of the wafer stacking surface, an air outlet 7 formed in the side face, and a vacuum groove 5 connecting the wafer suction part 3 and the air outlet 7 spatially; a probe 4 capable of applying a power to a semiconductor light-emitting element on a semiconductor wafer 10 to be stacked on the wafer stacking surface of the stage 6; and a light-receiving part 2 disposed on the side opposite to the wafer stacking surface, and receiving the light outputted from the semiconductor light-emitting element. The vacuum groove 5 extends in the first axial direction, i.e., any one axial direction of the stage 6 in the plane direction, and when the probe 4 applies a power to the semiconductor light-emitting element, moves the semiconductor wafer 10 and the light-receiving part 2 in the second axial direction perpendicular to the first axial direction and parallel with the plane of the stage 6.SELECTED DRAWING: Figure 3

Description

  The present invention relates to an evaluation apparatus and an evaluation method for a semiconductor light emitting element.

  Conventionally, a probe inspection apparatus for measuring characteristics of a semiconductor element formed on a semiconductor wafer has been widely used. In the conventional probe inspection apparatus, a wafer is placed on a wafer chuck, and the probe of the measurement unit disposed above the wafer and the electrode of the element formed on the wafer are in electrical contact with each other, thereby electrical characteristics of the element. Is measured (see Patent Document 1).

  In addition, in order to measure the optical characteristics of a semiconductor light emitting element typified by a light emitting diode (LED), a semiconductor inspection apparatus having a stage made of a material that transmits light such as quartz is also known (see Patent Document 2).

JP-A-7-263526 WO2012 / 071190

  FIG. 5A is a schematic cross-sectional view of the probe inspection apparatus disclosed in Patent Document 1. FIG. 5B is a schematic top view of the wafer chuck 97 of the probe inspection apparatus disclosed in Patent Document 1. The probe inspection apparatus 90 disclosed in Patent Document 1 includes a wafer chuck 97 that includes a vacuum suction passage (wafer suction portion) 93 in a region that occupies most of the wafer loading surface. The semiconductor wafer 91 to be evaluated is sucked onto the wafer loading surface of the wafer chuck 97 by the vacuum suction passage 93 and the vacuum pump 96 that performs evacuation. The probe 94 and the electrode of the semiconductor light emitting element on the semiconductor wafer 91 are brought into electrical contact, and the light output from the semiconductor light emitting element is received by the light receiving unit 92, whereby the electrical characteristics of the semiconductor light emitting element are improved. taking measurement. When a semiconductor light emitting element is evaluated using such a probe inspection device 90, even if a light transmissive member such as quartz is used for the stage, as shown in FIG. The light output from the semiconductor light emitting element causes optical interference 95 such as reflection, refraction, and absorption. Thereby, an error will occur depending on the measurement location of the optical characteristics of the semiconductor light emitting device subjected to the evaluation. Further, since the arrangement of the semiconductor light emitting elements and the relative positional relationship with respect to the vacuum groove 93 are different for each semiconductor wafer 91 to be measured, it is difficult to unambiguously correct the error due to the measurement point described above.

  Moreover, when using the semiconductor test | inspection apparatus which does not require vacuum adsorption | suction which is disclosed by patent document 2, it is necessary to stick a semiconductor light emitting element on an adhesive sheet form beforehand. However, when the semiconductor light emitting element to be measured is an element that emits light in the ultraviolet region, it is difficult to measure with high reproducibility because the adhesive sheet deteriorates during the measurement and the adhesiveness and transmittance change.

  In view of the above problems, the present invention provides an evaluation apparatus for a semiconductor light emitting element on a semiconductor wafer and an evaluation of the semiconductor light emitting element capable of evaluating optical characteristics with high accuracy regardless of the wavelength range of light emitted from the semiconductor light emitting element. It is an object to provide a method.

  One embodiment of the present invention is movable in a planar direction and a vertical direction, and includes a wafer suction portion formed in a central portion of a wafer stacking surface, an exhaust port formed in a side portion, the wafer suction portion, and the exhaust A stage having a vacuum groove that spatially connects the mouth, and a probe capable of applying power to a semiconductor light emitting device on a semiconductor wafer mounted on the wafer loading surface of the stage, A light receiving portion disposed on a surface opposite to the wafer loading surface for receiving light output from the semiconductor light emitting element, and the vacuum groove is any one axis in the planar direction of the stage portion. When the power is applied to the semiconductor light emitting element by the probe unit, the semiconductor wafer and the light receiving unit are perpendicular to the first axial direction and the stage. Flat on the flat surface Move to a second axial is an evaluation apparatus for a semiconductor light-emitting device.

According to another aspect of the present invention, there is provided a semiconductor light-emitting element evaluation method using the semiconductor light-emitting element evaluation apparatus, wherein a semiconductor wafer is covered so as to cover the wafer suction portion of the stage portion with an outer edge portion thereof. A first installation step of installing, a first fixing step of depressurizing through the vacuum groove from the exhaust port, and fixing the semiconductor wafer to the wafer loading surface; and formed on the fixed semiconductor wafer Electric power is applied to each of the first group of semiconductor light emitting elements, and light emitted from the respective semiconductor light emitting elements via the stage unit is received by the light receiving unit, and the first group of semiconductor light emitting elements is received. A first evaluation step for evaluating each light output characteristic of
A second installation step of releasing the fixation of the semiconductor wafer and moving the semiconductor wafer so that the wafer adsorption portion is covered with the first group of semiconductor light emitting elements; and from the exhaust port through the vacuum groove A second fixing step of reducing the pressure and fixing the semiconductor wafer to the wafer stacking surface again; and a second group different from the first group of semiconductor light emitting elements formed on the fixed semiconductor wafer. Electric power is applied to each of the semiconductor light emitting elements, light emitted from the respective semiconductor light emitting elements through the stage unit is received by the light receiving unit, and each light output of the second group of semiconductor light emitting elements is received. And a second evaluation step for evaluating the characteristics.

It is the upper surface schematic diagram and cross-sectional schematic diagram of the semiconductor light-emitting device evaluation apparatus which concerns on one Embodiment of this invention. It is a figure which shows the modification of the wafer adsorption | suction part of the semiconductor light-emitting device evaluation apparatus which concerns on one Embodiment of this invention. It is the upper surface schematic diagram and cross-sectional schematic diagram of the state which loaded the semiconductor wafer in which the semiconductor light-emitting device was formed in the stage part of the semiconductor light-emitting device evaluation apparatus which concerns on one Embodiment of this invention. It is a cross-sectional schematic diagram which shows an example of the stage part of the semiconductor light-emitting device evaluation apparatus which concerns on one Embodiment of this invention. It is the upper surface schematic diagram and cross-sectional schematic diagram explaining the conventional semiconductor light-emitting device evaluation apparatus.

  Hereinafter, a mode for carrying out the present invention (hereinafter referred to as this embodiment) will be described. However, the following embodiments do not limit the invention according to the claims. In addition, not all the combinations of features described in the embodiments are essential for the solving means of the present invention.

[Semiconductor Light-Emitting Element Evaluation Apparatus]
FIG. 1 is a diagram showing an example of the configuration of the semiconductor light-emitting element evaluation apparatus according to this embodiment. FIG. 1A is a schematic top view of the semiconductor light-emitting element evaluation apparatus according to this embodiment. FIG. 1B is a schematic cross-sectional view of the semiconductor light-emitting element evaluation apparatus according to this embodiment. Hereinafter, an example of the configuration of the semiconductor element evaluation apparatus according to the present embodiment will be described with reference to FIG. In this description, the semiconductor light-emitting element evaluation apparatus will be described with reference to a state in which the semiconductor light-emitting element evaluation apparatus is normally used (that is, a state in which the semiconductor light-emitting element evaluation apparatus is installed on a substantially horizontal table).

  The semiconductor light-emitting element evaluation apparatus 1 according to the present embodiment spatially connects the wafer suction unit 3 formed at the center of the upper surface, the exhaust port 7 formed at the side surface, and the wafer suction unit 3 and the exhaust port 7. A stage unit 6 having a vacuum groove 5 to be connected; a probe unit 4 capable of applying power to a semiconductor light emitting element on a semiconductor wafer (not shown) mounted on the upper surface side of the stage unit 6; and a semiconductor And a light receiving unit 2 disposed on the lower surface side of the stage unit 6 that receives light output from the light emitting element. Moreover, the stage part 6 is a shape which has a plane part, Comprising: It can move to a plane direction and a perpendicular direction.

  The semiconductor light-emitting element evaluation apparatus 1 includes the wafer suction unit 3 at the center of the upper surface of the stage unit 6, so that the outer edge of the semiconductor wafer is superimposed on the wafer suction unit 3 and then exhausted through the vacuum groove 5. The pressure is reduced from the mouth 7. This makes it possible to evaluate most of the semiconductor light emitting elements among the semiconductor light emitting elements on the semiconductor wafer with high accuracy while fixing the semiconductor wafer on the stage unit 6. That is, the semiconductor light emitting element in the region that does not overlap with the wafer adsorption unit 3 when the stage unit 6 is viewed from above is less affected by light reflection, refraction, absorption, and the like by the wafer adsorption unit 3. It is possible to evaluate the optical characteristics of each semiconductor light-emitting element with no unambiguous correction.

  Here, “the central portion of the upper surface of the stage portion” is a substantially central portion of the wafer loading surface of the stage portion 6, and the length of one side of the wafer loading surface of the stage portion 6 (the wafer loading surface of the stage portion 6 is circular). In this case, it means a region having a length of less than half of the diameter), preferably a length of 1/3 or less, more preferably a region of 1/4 or less. Although not particularly limited thereto, it is preferable that the wafer suction unit 3 is provided only in the center of the upper surface of the stage unit 6 from the viewpoint of reducing optical interference.

  Moreover, the semiconductor light-emitting element evaluation apparatus 1 according to the present embodiment may further include a transport unit (not shown) capable of moving the semiconductor wafer mounted on the stage unit 6 in the second axial direction. By further providing the transfer unit, it is possible to automatically carry in and out the wafer, and to further reduce the manufacturing time.

  The semiconductor light-emitting element evaluation apparatus 1 according to the present embodiment may further include a magazine unit that can store a plurality of semiconductor wafers and an aligner unit (not shown) that aligns the directions of the semiconductor wafers. By providing the magazine part and the aligner part, a plurality of wafers can be continuously and automatically measured, and the manufacturing time can be further shortened.

  Hereinafter, each structure of the semiconductor light-emitting element evaluation apparatus 1 will be described.

[Stage part]
The stage unit 6 includes a wafer suction unit 3 formed at the center of the upper surface, an exhaust port 7 formed at the side surface, and a vacuum groove 5 that spatially connects the wafer suction unit 3 and the exhaust port 7. The stage unit 6 is movable in the planar direction and the vertical direction, and has a function as a movable table on which the semiconductor wafer is placed. That is, the stage unit 6 can move in the vertical direction and the horizontal direction while placing the semiconductor wafer.

  The shape of the stage unit 6 may be a rectangular shape or a circular shape, but is not limited thereto.

  Moreover, the vacuum groove 5 which the stage part 6 has is extended in the 1st axial direction which is any one axial direction of the planar direction of the stage part 6, as FIG.1 (b) shows. Is preferred.

  The vacuum groove 5 extends in the first axial direction, which is one of the axial directions of the stage portion 6, so that the vacuum of light emitted from the semiconductor light emitting element formed on the semiconductor wafer is obtained. Optical interference in the groove portion can be further reduced.

  Further, as shown in FIG. 1B, the stage unit 6 has a length L of the stage in the second axial direction perpendicular to the first axial direction and parallel to the plane of the stage unit 6, and the second It is preferable that a <L / 4, where a is the length of the opening of the suction portion 3 in the axial direction. This is preferable because a sufficient number of semiconductor light emitting elements that can be measured can be secured while reducing optical interference in a semiconductor wafer fixed by evacuation in a certain state. By satisfying the relationship of a <L / 4, it becomes possible to measure while reducing the optical interference of the semiconductor light emitting elements of approximately half or more of the area of the semiconductor wafer. It becomes possible to measure.

  The stage unit 6 may be made of a member having a light transmittance of 50% or more with respect to the light output from the semiconductor light emitting element. Thereby, the light emitted from the semiconductor light emitting element formed on the semiconductor wafer and absorbed by the stage unit 6 can be minimized, and the characteristics of the semiconductor light emitting element can be accurately measured. For example, when an ultraviolet LED is used as the semiconductor light emitting element, a member having a light transmittance of 50% or more includes glass made of quartz. However, the material of the stage unit 6 is not limited to glass, and various materials can be used. Moreover, even if it is the structure which measures a light emission characteristic, light transmissive resin etc. other than glass can also be used.

  In addition, FIG. 1 shows a case where the wafer suction unit 3 included in the stage unit 6 in the semiconductor light-emitting element evaluation apparatus 1 has a circular shape, but is not limited thereto. The wafer suction unit 3 may be any shape that can hold a semiconductor wafer. In addition to a circular shape, for example, a polygonal shape including a square shape, an elliptical shape, a cross shape, and the like can be used. Various shapes and combinations thereof can be employed.

  Further, the stage unit 6 may be one in which operation control such as a moving amount and a moving direction is performed by a control unit (not shown) configured by a CPU or the like.

[Semiconductor wafer]
The semiconductor wafer that can be measured by the semiconductor light emitting element evaluation apparatus 1 of the present embodiment may be made of, for example, a sapphire substrate. The sapphire substrate has, for example, a circular shape in plan view, and a diameter of, for example, 1 inch or more can be used. However, the shape and dimensions are not limited to this.

  As a semiconductor light emitting element on a semiconductor wafer, a semiconductor layer (LED structure) in which a light emitting n-type semiconductor layer, an active layer, and a p-type semiconductor layer are stacked may be formed on a substrate. A current diffusion layer may be formed on the surface of the p-type semiconductor layer of the semiconductor layer (LED structure). The current diffusion layer may be, for example, an ITO film (indium tin oxide film) that is a conductive transparent film. A bonding electrode may be formed on the surface of the current diffusion layer, and the p-type semiconductor layer may be electrically connected to the bonding electrode through the current diffusion layer. An n-type semiconductor layer as a resistance layer may be formed separately from the n-type semiconductor layer of the light-emitting semiconductor layer (LED structure). An n-ohmic electrode may be formed on the surface of the n-type semiconductor layer as the resistance layer. A bonding electrode may be formed on the surface of the n ohmic electrode. The n-type semiconductor layer of the resistance layer may be electrically connected to the bonding electrode through the n ohmic electrode. The ohmic electrode formed on the surface of the n-type semiconductor layer as the resistance layer and the ohmic electrode formed on the surface of the n-type semiconductor layer of the light emitting semiconductor layer (LED structure) are connected by a wiring layer. Good. The wiring layer may include wiring layers arranged in parallel with an appropriate distance from each other.

  Further, the semiconductor light emitting device on the semiconductor wafer may have a backside light emitting LED structure from which light emitted from the substrate side is taken out.

  The wavelength of the semiconductor light emitting device on the semiconductor wafer may be in the infrared region, visible region, or ultraviolet region.

[Probe part]
The probe unit 4 is used to input an electric signal to an element from an electrode of a semiconductor light emitting element formed on the semiconductor wafer and to extract an electric signal from the element. The probe unit 4 generally includes a plurality of styluses made of metal such as copper or aluminum. It is preferable that the part which contacts the electrode provided in the semiconductor light emitting element used as the measuring object of a stylus is comprised with the metal which forms ohmic contact. Moreover, you may plate the metal which will be in ohmic contact with the electrode of a semiconductor light emitting element on the front-end | tip part of a stylus. The stylus is urged so as to be pushed out from the main body of the probe unit 4, and when the tip of the stylus is pressed against the electrode of the semiconductor light emitting element, the stylus of the electrode and the probe unit 4 is pressed by an appropriate pressure. , Connected to a power source or a measuring instrument (not shown). Then, an electric signal is input from the power source to the semiconductor light emitting element according to the necessary measurement contents, and a signal output from the semiconductor light emitting element in response to the electric signal is measured with a measuring instrument.

[Light receiving section]
The light receiving unit 2 has a function of measuring the amount of light emitted from the semiconductor light emitting element on the semiconductor wafer.

  The light receiving unit 2 preferably includes an integrating sphere and a detector (not shown) from the viewpoint of efficiently acquiring optical characteristics.

  The integrating sphere means a sphere in which a spherical inner wall is formed with a reflectance of about 100%. When measuring light in a wavelength band of about 300 nm to 1300 nm, the spherical inner wall is coated with barium sulfate having a predetermined thickness. Further, when measuring light in the wavelength band of 250 nm to 2500 nm, the inner wall is made by compacting powder of PTFE (polytetrafluoroethylene), and when measuring the wavelength band of 1 μm to 2 μm in the infrared region, the inner wall Is preferably plated with gold. Since the integrating sphere has a highly reflective inner wall, when a light source is placed inside the integrating sphere, the emitted light from the light source is diffusely reflected by the highly reflective inner wall, and this diffuse reflected light is repeatedly reflected on the integrating sphere. It hits the inner wall and diffuses. As a result, the directivity of the radiated light is integrated, and almost uniform brightness can be obtained regardless of the measurement position in the integrating sphere. Since this measurement value is proportional to the total light amount of the light source, the light amount of the light source to be measured can be specified by calibrating with the reference output value from the reference light source (master work).

  Moreover, a detector means the apparatus which can measure a light quantity. When light is applied to the photodiode portion installed in the detector, current and voltage can be generated and the amount of light can be measured. The detector may be provided with a spectrometer that disperses light for each wavelength. By installing the detector in the integrating sphere, the light quantity of the light source to be measured can be specified.

  Hereinafter, a more specific form of the semiconductor light emitting element evaluation apparatus 1 according to the present embodiment and a form related to the semiconductor light emitting element evaluation method will be further described.

  As shown in FIG. 1, as an example, the semiconductor light-emitting element evaluation apparatus 1 has a donut-shaped wafer adsorption unit 3 having a diameter a at the center of the upper surface of a square-shaped stage unit 6 having a side length L. ing. The wafer suction unit 3 is connected to the exhaust port 7 via the vacuum groove 5. Therefore, a semiconductor wafer can be fixed to the stage unit 6 by connecting a device such as a vacuum pump to the exhaust port 7 and reducing the pressure while the wafer suction unit 3 is covered with the semiconductor wafer.

  FIG. 2 is a diagram illustrating a modification of the wafer suction unit 3. For example, the wafer suction portion 3 may be circular as shown in FIG. 2A, polygonal as shown in FIG. 2B, or FIG. ) As shown in FIG. Further, a combination of these may be used.

  Further, as described above, the semiconductor light emitting element evaluation apparatus 1 includes the probe unit 4 capable of applying power to the semiconductor light emitting element on the semiconductor wafer mounted on the upper surface side of the stage unit 6, and the semiconductor light emitting element. And a light receiving portion 2 disposed on the lower surface side of the stage portion 6 for receiving the output light. When the stage unit 6 is movable in the vertical direction and the horizontal direction, even if the probe unit 4 and the light receiving unit 2 are fixed, measurement can be performed by moving the stage unit 6. If the stage unit 6 cannot move, the probe unit 4 and the light receiving unit 2 can be moved while maintaining the relative positional relationship between the probe unit 4 and the light receiving unit 2 in the horizontal direction. Can be done.

  Moreover, the vacuum groove 5 of the semiconductor light emitting element evaluation apparatus 1 of this example extends in the first axial direction as shown in FIG. The length of the stage 6 in the second axial direction perpendicular to the first axial direction and parallel to the plane of the stage 6 is L, and the length of the opening of the wafer suction unit 3 in the second axial direction. When the thickness is a, it is preferable that the relationship of a <L / 4 is satisfied.

  FIGS. 3A and 3B are a schematic top view and a schematic cross-sectional view in a state where a semiconductor wafer on which a semiconductor light emitting element is formed is stacked on the upper surface of the stage portion of the semiconductor light emitting element evaluation apparatus of the present embodiment.

  As shown in FIG. 3A and FIG. 3B, the first installation step of fixing the semiconductor wafer 10 with the outer edge of the semiconductor wafer 10 covering the wafer suction portion 3, and the vacuum from the exhaust port 7 A first fixing step of fixing the semiconductor wafer 10 on the stage unit 6 by reducing the pressure through the groove 5 is performed. Then, power is applied from the probe unit 4 to each of the semiconductor light emitting elements of the first group 11, and the light receiving unit 2 receives light emitted from the semiconductor light emitting element to which power is applied through the stage unit 6. (First evaluation step). Here, referring to FIG. 3A, the light output from the semiconductor light emitting elements existing in the region (first group) 11 that is more than half of the semiconductor wafer 10 and received by the light receiving unit 2 is absorbed by the wafer. It is understood that the optical characteristics of the semiconductor light emitting elements existing in the first group 11 can be evaluated without causing optical interference due to the part 3 and the vacuum groove 5.

  Next, the decompression is once released and the fixation of the semiconductor wafer 10 is released. Then, as shown in FIG. 3C and FIG. 3D, the semiconductor wafer so that the wafer suction portion 3 is covered with the first group 11 measured in the first evaluation step described above. 10 is moved (second installation step), and then the second fixing step of fixing the semiconductor wafer 10 by reducing the pressure again is performed. Thereafter, similarly to the first evaluation step, electric power is applied from the probe unit 4 to each of the semiconductor light emitting elements of the second group 12, and the semiconductor light emitting element to which the electric power is applied passes through the stage unit 6. The light receiving unit 2 receives the emitted light (second evaluation step). Through such a process, as shown in FIG. 3C, the semiconductor light emitting elements existing in the second group 12 of the unmeasured semiconductor wafers 10 are optically formed by the wafer suction part 3 and the vacuum groove 5. It is understood that the optical characteristics of the semiconductor light emitting elements of the second group 12 can be evaluated without causing mechanical interference. Further, at this time, it is efficient for the semiconductor wafer 10 to move in the second axial direction perpendicular to the first axial direction in which the vacuum grooves 5 extend and parallel to the plane portion of the stage portion 6, More preferred.

  Through the above steps, it is possible to evaluate the optical characteristics of all the semiconductor light emitting elements on the semiconductor wafer 10 without causing optical interference due to the wafer suction portion 3 and the vacuum groove 5. Understood.

  By the way, depending on the size of the stage unit 6 and the size of the semiconductor wafer 10, the semiconductor light emitting element measured in the vicinity of the end of the stage unit 6 receives a part of the light emitted toward the end of the stage unit 6. It is assumed that an event such as reaching the light receiving unit 2 through a space that does not reach the unit 2 or passes through a space having a light absorption rate different from that of the stage unit 6 is assumed. In order to compensate for this, as shown in FIG. 4, it is more preferable that the side surface (side surface parallel to the first axial direction) of the stage portion 6 is covered with a highly reflective member 15.

  Further, the size of the semiconductor wafer 10 is set such that the length of the stage in the second axial direction perpendicular to the first axial direction in which the vacuum grooves 5 extend and parallel to the plane portion of the stage portion 6 is L, and the semiconductor When the diameter of the wafer 10 is φ, φ <L / 2 is efficient and more preferable. Moreover, it is more preferable that a <φ / 2 from the viewpoint of realizing evaluation of the optical characteristics of all semiconductor light emitting elements with a small number of movements.

  Up to this point, one embodiment of the present invention has been described. However, the present invention is not limited to the above-described embodiment, and it is needless to say that the present invention may be implemented in various forms within the scope of the technical idea. The scope of the present invention is not limited to the illustrated and described exemplary embodiments, but includes all embodiments that provide the same effects as those intended by the present invention. Further, the scope of the invention can be defined by any desired combination of particular features among all the disclosed features.

DESCRIPTION OF SYMBOLS 1 Semiconductor light-emitting device evaluation apparatus 2 Light-receiving part 3 Wafer adsorption part 4 Probe part 5 Vacuum groove 6 Stage part 7 Exhaust port 10 Semiconductor wafer 11 1st area | region 12 2nd area | region 15 High reflectance member

Claims (10)

It is movable in the plane direction and the vertical direction, and the wafer suction part formed in the center part of the wafer stacking surface, the exhaust port formed in the side part, and the wafer suction part and the exhaust port are spatially connected. A stage portion having a vacuum groove,
A probe unit capable of applying electric power to a semiconductor light emitting element on a semiconductor wafer mounted on the wafer loading surface of the stage unit;
A light receiving portion disposed on the side opposite to the wafer loading surface for receiving light output from the semiconductor light emitting element;
With
The vacuum groove extends in a first axial direction which is any one axial direction of the planar portion of the stage portion, and when applying power to the semiconductor light emitting element in the probe portion, the semiconductor wafer And an apparatus for evaluating a semiconductor light-emitting element, wherein the light-receiving unit is moved in a second axial direction that is perpendicular to the first axial direction and parallel to the planar portion of the stage unit.   The length of the stage in the second axial direction perpendicular to the first axial direction, which is the direction in which the vacuum groove extends, and parallel to the plane portion of the stage portion is L, and the wafer in the second axial direction The evaluation apparatus for a semiconductor light-emitting element according to claim 1, wherein a <L / 4, where a is the length of the opening of the adsorption portion.   The semiconductor light-emitting element evaluation apparatus according to claim 2, further comprising a transport unit capable of moving a semiconductor wafer mounted on the wafer stacking unit in the second axial direction.   The length of the stage in the second axial direction perpendicular to the first axial direction, which is the direction in which the vacuum groove extends, and parallel to the flat portion of the stage portion is L, and the diameter of the semiconductor wafer is φ. The evaluation apparatus for a semiconductor light-emitting element according to claim 1, wherein sometimes φ <L / 2.   2. The semiconductor light emitting element according to claim 1, wherein a <φ / 2, where a is a length of the opening of the wafer suction portion in the second axial direction and φ is a diameter of the semiconductor wafer. Evaluation device.   The evaluation device for a semiconductor light emitting element according to claim 1, wherein the light receiving unit is an integrating sphere.   The apparatus for evaluating a semiconductor light emitting element according to claim 1, wherein the stage portion is made of a member having a light transmittance of 50% or more with respect to light output from the semiconductor light emitting element.   The apparatus for evaluating a semiconductor light-emitting element according to claim 1, wherein the stage portion is made of quartz. A method for evaluating a semiconductor light-emitting element using the semiconductor light-emitting element evaluation apparatus according to claim 1,
A first installation step of installing a semiconductor wafer so as to cover the wafer adsorption portion of the stage portion with an outer edge portion thereof;
A first fixing step of reducing the pressure from the exhaust port through the vacuum groove and fixing the semiconductor wafer to the wafer loading surface;
Electric power is applied to each of the first group of semiconductor light emitting elements formed on the fixed semiconductor wafer, and light emitted from each of the semiconductor light emitting elements via the stage unit is received by the light receiving unit. And a first evaluation step for evaluating each light output characteristic of the first group of semiconductor light emitting devices,
A second installation step of releasing the fixation of the semiconductor wafer and moving the semiconductor wafer so that the wafer suction portion is covered with the first group of semiconductor light emitting elements;
A second fixing step of reducing the pressure from the exhaust port through the vacuum groove and fixing the semiconductor wafer to the wafer loading surface again;
Power is applied to each of the second group of semiconductor light emitting elements different from the first group of semiconductor light emitting elements formed on the fixed semiconductor wafer, and the stage unit is moved from the respective semiconductor light emitting elements. A second evaluation step of receiving the light emitted through the light receiving unit and evaluating the light output characteristics of each of the second group of semiconductor light emitting elements;
A method for evaluating a semiconductor light emitting device comprising:   The vacuum groove extends in a first axial direction that is any one of the planar directions of the stage portion, and in the second installation step, the semiconductor wafer is perpendicular to the first axial direction and The method for evaluating a semiconductor light-emitting element according to claim 9, wherein the semiconductor light-emitting element moves in a second axial direction parallel to the planar portion of the stage portion.

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