JP2019075434A - Prober device and wafer chuck - Google Patents

Abstract

To evaluate optical characteristics or temperature-dependent characteristics of a light emitting/receiving element formed on a wafer in the on-wafer state.SOLUTION: A light emitting/receiving element evaluation prober 100 includes a transparent glass heater 115 having a transparent glass substrate 111, a transparent conductive film 112, and parallel electrodes 113 and 114, a fixing clamp 130 that fixes a wafer 10 mounted on the upper surface of the transparent glass substrate 111, and a light irradiator or a light detector 150 that is disposed on the lower surface side of the transparent glass substrate 111 and transmits the light through the transparent glass heater 115 to irradiate the light emitting/receiving element 11 with light or transmits light from the light receiving/emitting element 11 through the transparent glass heater 115 to receive light, and the transparent glass heater 115, the fixed clamp 130, and a movable clamp 131 constitute a wafer chuck unit 110.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a prober apparatus and a wafer chuck.

2. Description of the Related Art In recent years, with the advancement of semiconductor devices with high performance, electronic control is performed on many industrial devices and home appliances. In particular, semiconductor devices mounted on portable terminal devices and in-vehicle devices are required to operate stably in a wide temperature range from low temperature to high temperature, and semiconductor device manufacturers conduct wafer level temperature characteristic tests. There is.
In this temperature characteristic test, temperature stress and electrical stress are applied to a wafer fixed to a stage cooled and heated in the range of -90 ° C. to + 400 ° C., and the temperature at which the semiconductor element can operate and the temperature of characteristics Measure for dependencies.

  The heating / cooling stage (hereinafter referred to as “wafer chuck”) used for the wafer temperature characteristic test needs to make the temperature of the temperature sensor for controlling the temperature of the heater or cooler approximately equal to the wafer temperature. . For example, Patent Document 1 discloses a technique of fixing a high thermal conductivity sheet (carbon sheet) placed on a wafer chuck and a wafer placed on the high thermal conductivity sheet with a vacuum chuck. The technique of Patent Document 1 attempts to reduce the temperature difference between the wafer chuck and the wafer.

On the other hand, the inspection of the optical characteristics of a light emitting element such as an LED element is performed by lighting the light emitting element and detecting the light of the light emitting element with a photodetector such as a spectroscope.
Patent Document 2 discloses an inspection apparatus that performs electrical measurement and optical measurement of a light emitting element. The inspection apparatus described in Patent Document 2 faces a plurality of probes arranged in a predetermined direction, a stage on which a plurality of light emitting elements respectively contacting the plurality of probes are placed, and a light emitting element lit by the probes And a movement mechanism for moving the light detection device in the predetermined direction, and the light detection device is moved in the predetermined direction. Optical measurement of a plurality of light emitting elements which are lit in the predetermined direction is performed.

  Patent Document 3 discloses a mounting table on which a substrate on which an LCD panel is formed is mounted, a light source including a plurality of point light sources illuminating the LCD panel on the mounting table, and diffusion light diffusing illumination light from the light source. A board, a probe card for applying a signal for a lighting test to the LCD panel, a signal generator for generating a signal for a lighting test to be sent to the probe card, and imaging the LCD panel with the above signals applied to the LCD panel An inspection apparatus is described that includes an imaging unit that performs the image processing and a heating unit that heats the mounting surface of the mounting table.

JP 2007-288101 A JP, 2015-226008, A Unexamined-Japanese-Patent No. 2004-287368 (Paragraph 0043, 0044, FIG. 5)

However, in the inspection apparatus described in Patent Documents 1 and 2, the wafer chuck is for the temperature characteristic test of the semiconductor element and is not configured in consideration of the optical characteristic. Therefore, the temperature characteristic test of the light emitting / receiving element and the light receiving test are simultaneously performed. I could not do it. For this reason, when performing an electrical test or a high temperature test of the light emitting / receiving element, it is necessary to perform the test using separate prober devices, and there is a problem that equipment cost and test cost are required.
Moreover, the inspection apparatus described in Patent Document 3 is considered to perform light reception inspection and high temperature inspection with one probe device by using a transparent heating plate. However, the inspection apparatus described in Patent Document 3 performs imaging by imaging the substrate on which the LCD panel is formed, and performs an electrical test and a high-temperature test of the light emitting / receiving element on the wafer on which the light emitting / receiving element is formed. It is not something to do. Thus, wafer chucks are not described, and their applications are different.

  The present invention has been made to solve such problems, and a prober apparatus capable of probing and evaluating optical characteristics or temperature-dependent characteristics of a light emitting / receiving element formed on a wafer on a wafer. It aims at providing a wafer chuck.

  In order to achieve the above object, one means of the present invention is a prober which measures the temperature dependency of one or both of electrical inspection and optical characteristics of a light emitting / receiving element (photoelectric conversion element) formed on a wafer. An apparatus, comprising: a translucent heating plate; a fixing part (clamp, vacuum chuck) for fixing the wafer placed on one surface of the translucent heating plate; and the other of the translucent heating plate And a photoelectric conversion device disposed on the surface side of the semiconductor device.

  With this configuration, the upper surface of the translucent heating plate has a wafer chuck function to chuck the wafer in combination with the clamp. In addition, since the transparent glass heater is transparent, transmission of light of the photoelectric conversion device disposed on the other surface side of the transparent glass substrate is not hindered. It is possible to measure the electrical inspection, the optical characteristics, or the temperature dependency of the light emitting and receiving element formed on the wafer in the on-wafer state.

  Another means of the present invention is a wafer chuck used for a temperature characteristic test of a wafer, which comprises a translucent substrate, a transparent conductive film formed on the translucent substrate, and the transparent conductive film. A translucent heating plate having an electrode to be energized, and a fixing portion for fixing the wafer placed on one surface of the translucent substrate.

  With this configuration, it is possible to realize a wafer chuck capable of measuring the electrical inspection, optical characteristics, or temperature dependency of the light emitting / receiving element in the on-wafer state.

  According to the present invention, it is possible to probe and evaluate optical characteristics or temperature dependent characteristics of a light emitting and receiving element formed on a wafer in an on-wafer state.

FIG. 1 is an entire configuration diagram of a light emitting / receiving element evaluation prober apparatus according to an embodiment of the present invention. FIG. 2 (a) is a plan view of an essential part around the wafer chuck unit, and FIG. 2 (b) is a plan view of the periphery of the wafer chuck unit according to the embodiment of the present invention. It is a side view of 2 (a). It is a principal part top view of a wafer chuck unit circumference of a prober device for light emitting and receiving elements evaluation concerning an embodiment of the present invention. It is sectional drawing which shows the structure of the wafer chuck unit of the prober apparatus for light emitting / receiving element evaluation which concerns on embodiment of this invention, FIG. 4 (a) is AA sectional drawing of Fig.2 (a), FIG.4 (b) 2 is a cross-sectional view taken along the line B-B in FIG. 2 (a), and FIG. 4 (c) is a cross-sectional view taken along the line C-C in FIG. 2 (a). FIG. 5A is a cross-sectional view showing the structure of a wafer chuck unit of a prober for evaluating a light emitting / receiving element according to an embodiment of the present invention, and FIG. 5A is a main part of a portion enclosed by a dashed circle D in FIG. FIG. 5B is a partial enlarged view of a portion surrounded by a broken line circle E in FIG. 4B. It is a figure explaining the light reception test of the back incidence type light receiving element of the prober apparatus for light emitting / receiving element evaluation which concerns on embodiment of this invention, FIG. 6 (a) shows a high temperature test, FIG.6 (b) shows a high temperature test. FIG. It is a figure explaining the light emission test of the back emission type light emitting element of the prober apparatus for light emitting / receiving element evaluation which concerns on embodiment of this invention, FIG. 7 (a) shows a high temperature test, FIG.7 (b) shows a high temperature test. FIG.

  Hereinafter, embodiments of the present invention (hereinafter, referred to as “this embodiment”) will be described in detail with reference to the drawings. The drawings are only schematically shown to the extent that the present embodiment can be sufficiently understood. Moreover, in each figure, about the component common in common, and the same component, the same code | symbol is attached | subjected and those duplicate description is abbreviate | omitted.

FIG. 1 is an overall configuration diagram of a light emitting / receiving element evaluation prober according to an embodiment of the present invention. 2 (a) and 3 are plan views of essential parts around the wafer chuck unit of the light emitting / receiving element evaluation prober, and FIG. 2 (b) is a side view of FIG. 2 (a).
The light emitting / receiving element evaluation prober 100 is a device that checks the electrical inspection, optical characteristics, or temperature dependency of the light emitting / receiving element (photoelectric conversion element) formed on the wafer. The light emitting / receiving element evaluation prober 100 measures the temperature dependency of one or both of the electrical inspection and the optical characteristics of the light emitting / receiving element (photoelectric conversion element) formed on the wafer.
As shown in FIG. 1, the prober device 100 for light emitting / receiving element evaluation includes a transparent glass heater 115 (light transmitting heating plate) (see FIG. 5), a temperature sensor 118, a base 120, and a fixing clamp 130 (fixing portion , First clamp), movable clamp 131 (fixed part, second clamp), heating / cooling stage 140, light irradiator or light detector 150 (photoelectric conversion device), photoelectric conversion device mounting table 155, positioning stage 160 (moving stage), a probe card 170 having a probe 171, a temperature controller 180, and an electronic measuring instrument 190.
The transparent glass heater 115 and the fixed clamp 130 and the movable clamp 131 constitute a wafer chuck unit 110 (fixed part).
The light emitting / receiving element evaluation prober apparatus 100 further includes a cooling liquid circulating transparent glass jacket 200 (see FIGS. 6B and 7B).

<Wafer 10>
The wafer 10 has a plurality of light emitting / receiving elements 11 formed thereon. The light emitting / receiving element 11 is a back illuminated type light receiving element (for example, a photodiode (PD: Photodiode), an image sensor (Image Sensor) or the like) or a backside emitting type light emitting element (for example, an LED (light emitting diode) Vertical cavity surface emitting laser (e.g. vertical cavity surface emitting laser)) and the like. A plurality of electrodes for measuring a signal for a light receiving test (light receiving inspection) or a plurality of electrodes for applying a signal for a light emitting test (light emitting inspection) are arranged around the light emitting / receiving element 11. A probe 171 is brought into contact with this electrode to probe and evaluate the electrical inspection, optical characteristics, and temperature-dependent characteristics of the light emitting and receiving element 11 in the on-wafer state.
Although the light emitting element formed on the wafer 10 is referred to as a light emitting / receiving element 11 for convenience of explanation, the light emitting / receiving element 11 is a back illuminated type light receiving element and a back emission type light emitting element formed on the wafer 10 It is either. For example, FIG. 6 shows the wafer 10 on which the back surface incident type light receiving element 11A is formed, and FIG. 7 shows the wafer 10 on which the back surface emission type light emitting element 11B is formed.
At the time of the test of the back illuminated type light receiving element 11A (FIG. 6), the illumination light for test (inspection) is irradiated to the corresponding back illuminated type light receiving element 11A, and only the corresponding back illuminated type light receiving element 11A is received. In the back illuminated photodetector 11A, the current corresponding to the test illumination light is measured. Further, at the time of testing the back surface emission type light emitting element 11B (FIG. 7), a signal for light emission test is applied to the corresponding back surface emission type light emitting element 11B, and only the corresponding back surface emission type light emitting element 11B emits light.

<Wafer chuck unit 110>
The wafer chuck unit 110 includes a transparent glass heater 115 (see FIG. 5) that is a transparent heating element and a mounting table, and a fixed clamp 130 and a movable clamp 131 that chuck the wafer 10 on the upper surface of the transparent glass heater 115.
The transparent glass heater 115 is a mounting table having a square shape in top view, and chucks the wafer 10 mounted on the upper surface thereof using the fixed clamp 130 and the movable clamp 131.
The transparent glass heater 115 is transparent, and transmits the light of the light emitting / receiving element 11 formed on the wafer 10 at the time of test.
The transparent glass heater 115 is a heating element, and installation of another heater is unnecessary.

The wafer chuck unit 110 includes a fixed clamp 130 and a movable clamp 131 used in combination with the transparent glass heater 115 so as to press the wafer 10 against the upper surface of the transparent glass heater 115 using the fixed clamp 130 and the movable clamp 131. Chuck it.
The wafer chuck unit 110 includes a temperature sensor 118, and measures the temperature of the transparent glass substrate 111 (described later) (the temperature at which the wafer 10 is heated). The wafer chuck unit 110 further includes a coolant circulating transparent glass jacket 200 (see FIGS. 6B and 7B), and cools the wafer 10 fixed on the upper surface of the wafer chuck unit 110.
The detailed configuration of the wafer chuck unit 110 will be described later with reference to FIGS. 3 to 5.
In the wafer chuck unit 110, the chuck will be described with the upper surface of the transparent glass heater 115 referred to as the upper surface of the wafer chuck unit 110 from the viewpoint that the mounting table is the upper surface of the transparent glass heater 115.

<Base 120>
The base 120 is fixed to the upper surface of the heating and cooling stage 140 so as to surround the rectangular opening 140 a on the upper surface of the heating and cooling stage 140. The base 120 has an L-shaped flange 120a in cross section, and both ends of the wafer chuck unit 110 are suspended on the flange 120a. The depth from the upper surface 120 b of the base 120 to the upper surface of the flange portion 120 a is equal to the thickness of the wafer chuck unit 110. When the wafer chuck unit 110 is mounted on the base 120, the upper surface of the wafer chuck unit 110 is the base 120. Is flush with the top surface 120b of the Thus, the wafer chuck unit 110 is fitted into the base 120 without any gap, and the four corners are held by the holding portion 122. The pressing portion 122 is screwed and fixed to the base 120.

<Fixed Clamp 130 and Movable Clamp 131>
The fixed clamp 130 and the movable clamp 131 hold the wafer 10 placed on the wafer chuck unit 110 from both sides while pressing the wafer 10 against the upper surface of the wafer chuck unit 110 (upper surface of the transparent glass heater 115). Chuck it. This will be described in more detail with reference to FIGS. 2 and 3.
As shown in FIGS. 2 and 3, the fixing clamp 130 is a substantially square plate-like metal member, and is screwed to one upper surface portion of the base 120.

  As shown in FIG. 5B, the fixed clamp 130 has a tapered surface 130a in which the end surface (first end surface) facing the wafer 10 is inclined downward. The end surface on which the tapered surface 130a is formed has a V-like shape whose central portion is constricted in top view (see FIG. 3). That is, in the fixed clamp 130, the end face facing the wafer 10 has a tapered surface 130a, and the tapered surface 130a has a V-shaped central portion. The fixed clamp 130 brings the corner of the side end of the wafer 10 into contact with the tapered surface 130 a. When the corner of the side edge of the wafer 10 is pressed against the downward tapered surface 130 a, a stress that causes the wafer 10 to move downward is generated, which serves as a chuck that presses the wafer 10 against the top surface of the wafer chuck unit 110.

  The tapered surface 130a has a V-shaped central portion, and the wafer 10 in contact with the tapered surface 130a is guided toward the central portion of the V-shape. Therefore, the wafer chuck unit 110 is placed substantially at the center of the wafer chuck unit 110 in accordance with the size (wafer diameter) of the wafer 10. The central position of the wafer chuck unit 110 is a place where the temperature distribution in the plane is stabilized with the highest amount of heat when the wafer chuck unit 110 is heated by energization, and is suitable for probing evaluation of temperature-dependent characteristics.

  As shown in FIG. 2A and FIG. 3, the fixed clamp 130 is formed with an elongated hole 130 b in a central longitudinal direction in plan view, and a flathead screw 130 c is inserted into the elongated hole 130 b. Screw fixed to the part. The dimensions (wafer diameter) of the wafer 10 can be adjusted by changing the position of the long hole 130 b with respect to the flat head screw 130 c. For example, as shown in FIG. 2A, when the size of the wafer 10 (wafer diameter) is large, a flathead screw 130c is screwed and fixed at the left end of the long hole 130b. Further, as shown in FIG. 3, when the dimension of the wafer 10 (wafer diameter) is small, the flathead screw 130c is screwed and fixed at the right end of the long hole 130b. In the case of the other dimensions (wafer diameter) of the wafer 10, the wafer 10 is placed substantially at the center of the wafer chuck unit 110 by changing the position of the long hole 130b with respect to the flat head screw 130c.

  On the other hand, as shown in FIGS. 2 and 3, the movable clamp 131 is a substantially rectangular plate-like metal member, and the upper surface portion of the shaft guide 134 of the clamp mechanism 132 (described later) installed on the other side of the base 120. It is screwed into place. The movable clamp 131 is fixed to the upper surface of the shaft guide 134, and the shaft guide 134 is biased toward the tension spring attaching portion 135 fixed to the bottom of the base 120 by the tension spring 136. Therefore, the movable clamp 131 moves so that the end face abuts on the outer peripheral portion of the wafer 10.

  As shown in FIG. 5A, the movable clamp 131 has a tapered surface 131a in which the end surface (second end surface) facing the wafer 10 is inclined downward. The movable clamp 131 brings the corner of the side end of the wafer 10 into contact with the tapered surface 131a. When the corner of the side edge of the wafer 10 is pressed against the downward tapered surface 131 a, a stress that causes the wafer 10 to move downward is generated, which serves as a chuck that presses the wafer 10 against the top surface of the wafer chuck unit 110. In addition, the wafer 10 is guided to the center part of V shape by the taper surface 130a of the fixed clamp 130 being formed in V shape. Therefore, the movable clamp 131 only needs to move the tapered surface 131a in the X-axis direction of the wafer chuck unit 110.

  As shown in FIGS. 2 and 3, the movable clamp 131 has a long hole 131 b formed in a longitudinal direction in plan view, and a flathead screw 131 c is inserted into the long hole 131 b and the upper surface of the shaft guide 134 is screwed. Stop fixed. The dimensions (wafer diameter) of the wafer 10 can be adjusted by changing the positions of the long holes 131 b with respect to the flathead screws 131 c. For example, as shown in FIG. 2A, when the size of the wafer 10 (wafer diameter) is large, a flathead screw 131c is screwed and fixed at the right end of the long hole 131b. Further, as shown in FIG. 3, when the size (wafer diameter) of the wafer 10 is small, the flathead screw 131c is screwed and fixed at the left end portion of the long hole 131b. In the case of the other dimensions (wafer diameter) of the wafer 10, the wafer 10 is placed at the central position of the wafer chuck unit 110 by changing the position of the long hole 131b with respect to the flat head screw 131c.

  Thus, regardless of the size (wafer diameter) of the wafer 10, the fixed clamp 130 and the movable clamp 131 move the wafer 10 mounted on the wafer chuck unit 110 to one of the tapered surfaces 130a of the fixed clamp 130. The upper surface of the wafer chuck unit 110 is sandwiched from three sides at three points of points (P1 and P2 in FIGS. 2 and 3) and one point (P3 in FIGS. 2 and 3) of the tapered surface 131a of the movable clamp 131 Chuck the wafer 10 by pressing it against the

The inclination angle of the tapered surfaces 130a and 131a of the clamps 130 and 131 (the angle between the horizontal surface and the tapered surface) and the force of the tension spring 136 will be described.
In this embodiment, a force for moving the wafer 10 to the upper surface of the wafer chuck unit 110 is generated by sandwiching both ends of the wafer 10 with a predetermined force by the tapered surface 130 a of the fixed clamp 130 and the tapered surface 131 a of the movable clamp 131. The force is used as a wafer chuck. Therefore, it is important to adjust the inclination angles of the tapered surfaces 130a and 131a of the clamps 130 and 131 and the force of the tension spring 136 (force to press both ends of the wafer 10). Further, as the diameter of the wafer 10 becomes larger, the problem of warping and non-flatness of the surface of the wafer 10 mounted on the wafer chuck unit 110 becomes more remarkable.

From the above, it is premised that the wafer 10 has appropriate rigidity (thickness) which is not deformed by the pressure applied to the both end portions. Then, the inclination angles of the tapered surfaces 130a and 131a are set to, for example, 40 degrees to 85 degrees. When the inclination angle is 60 degrees, it is confirmed by tests that the force for pressing the both ends of the wafer 10 is preferably 40 gf (0.39 N), for example. This numerical range is verified for the first time by a test etc. by the present inventor.
Here, if the inclination angle is made too small, the force pressing the both ends of the wafer 10 is converted into a force that causes the fixed clamp 130 and the movable clamp 131 to float from the upper surface of the wafer chuck unit 110. If this is to be avoided, the structures of the fixed clamp 130 and the movable clamp 131 have to be made large, heavy and thick, which is not preferable. In order to prevent the wear of the tapered surfaces 130a and 131a of the clamps 130 and 131, reinforcing members (e.g., Stelite (registered trademark) vapor deposition) may be used at the ends of the fixed clamp 130 and the movable clamp 131.

<Heating and cooling stage 140>
The heating and cooling stage 140 fixes the wafer chuck unit 110 via the base 120 mounted on the upper surface, and the lower surface (bottom surface) is fixed on the positioning stage 160. More specifically, the heating and cooling stage 140 is configured in a frame shape in a side view, the base 120 is installed on the upper surface of the frame, and the lower surface of the frame is fixed on the positioning stage 160. The heating and cooling stage 140 may be in the form of a portal in which the lower surface of the frame is fixed on the positioning stage 160.
The heating and cooling stage 140 has a frame shape or a gate shape, and arranges the light irradiator or photodetector 150 and the photoelectric conversion device mounting table 155 inside the frame shape, and moves the wafer chuck unit 110 in the vertical and horizontal directions. However, the light irradiator or light detector 150 and the photoelectric conversion device mounting table 155 are configured not to interfere with each other.

The heating and cooling stage 140 has an opening 140 a on the top surface, the base 120 is mounted, and the wafer chuck unit 110 is fixed via the base 120. When the wafer chuck unit 110 is fixed to the base 120, the opening 140 a is closed by the wafer chuck unit 110 on the upper surface thereof.
On the back surface of the upper surface of the heating and cooling stage 140, a clamp mechanism 132 for slidably locking the movable clamp 131 on the base 120 is installed. The clamp mechanism 132 includes a shaft 133 extending in the direction of the fixed clamp 130, a shaft guide 134 disposed on the outer periphery of the shaft 133 and axially sliding, and a tension spring attachment portion 135 fixed to the bottom of the base 120. A tension spring 136 for urging the shaft guide 134 in the direction of the tension spring attachment portion 135, and a screw knob 137 for screwing and fixing the movable clamp 131 to the shaft guide 134 on the upper surface of the heating and cooling stage 140 are provided.

<Light irradiator or light detector 150>
The light irradiator or light detector 150 is a photoelectric conversion device that emits light to a light receiving element formed on the wafer 10 or receives light from a light emitting element formed on the wafer 10. Specifically, when the light emitting / receiving element 11 of the wafer 10 is the back illuminated type light receiving element 11A (see FIG. 6), the light irradiator or the light detector 150 is the light irradiator 150A (see FIG. 6) . When the light emitting / receiving element 11 of the wafer 10 is the back emission type light emitting element 11B (see FIG. 7), the light irradiator or the light detector 150 is the light detector 150B (see FIG. 7). The photodetector 150 may use an integrating sphere when measuring the total luminous flux emitted by the light emitting / receiving element 11.

<Photoelectric conversion device mounting base 155>
The light irradiator or light detector 150 is mounted on the photoelectric conversion device mounting table 155. The photoelectric conversion device mounting base 155 is fixed to a support (for example, support at four corners) not shown, and a probe card 170 and the like are fixed above the support. For this reason, the light irradiator or photodetector 150, the photoelectric conversion device mounting table 155, and the probe card 170 are fixed.
Here, the heating and cooling stage 140 is disposed so as to surround the light irradiator or the photodetector 150 and the photoelectric conversion device mounting table 155, and the heating and cooling stage 140 is moved by the positioning stage 160 in the XYZθ direction. In addition, the light irradiator or light detector 150, the photoelectric conversion device mounting table 155, and the heating and cooling stage 140 do not interfere with each other. Therefore, the wafer chuck unit 110 attached to the heating and cooling stage 140 moves in the XYZθ directions with respect to the fixed light irradiator or photodetector 150 and the probe card 170.

  The photoelectric conversion device mounting table 155 is formed in a U-shaped recessed bridge shape as viewed from above, and a light irradiator or a light detector 150 is attached to the center of the bridge shape. Then, the frame-shaped heating / cooling stage 140 may be formed so as to surround the outer periphery of the bridge shape which is recessed in the E shape. According to this structure, the weight of the heating / cooling stage 140 can be reduced, and the compactness of the entire light emitting / receiving element evaluation prober 100 can be achieved.

<Positioning stage 160>
The positioning stage 160 moves the wafer 10 on the wafer chuck unit 110 mounted on the heating and cooling stage 140 in the XYZθ direction by moving the heating and cooling stage 140 in the XYZθ direction.
The positioning stage 160 moves the translucent heating plate 115 of the wafer chuck unit 110 so that, for example, the light emitting / receiving element 11 in contact with the probe 171 and the light irradiator or the light detector 150 face each other.

<Probe Card 170>
The probe card 170 brings the probe 171 into contact with a specific part of the wafer 10 to apply voltage and current, and measures the voltage, current, phase and the like of the specific part. In the present embodiment, the voltage and current of the light emitting / receiving element 11 of the wafer 10 are detected.
The probe card 170 and the electronic measuring instrument 190 are connected via a test cable (see dashed line in FIG. 1) and a current introduction terminal (not shown). The probe card 170 may be of a manipulator type. The probe card 170 and the manipulator (not shown) are provided with a plurality of probes 171. The probe card 170 can be replaced depending on the type of the wafer 10 or the light emitting element.

<Probe 171>
The probe 171 electrically contacts a specific part of the light emitting / receiving element formed on the wafer. The probe 171 is brought into contact with the light emitting / receiving element 11 (back illuminated type light receiving element 11 A or back illuminated type light emitting element 11 B) formed on the wafer 10, and a probe for measuring the potential or current of the light emitting / receiving element 11. It is.

<Temperature sensor 118>
The temperature sensor 118 is a sheath type thermocouple (sheath thermocouple). The temperature sensor 118 is disposed in contact with the wafer chuck unit 110, and measures the temperature of the transparent glass substrate 111 (described later) of the wafer chuck unit 110 (temperature for heating the light emitting / receiving element 11 of the wafer 10). By disposing the temperature sensor 118 below the movable clamp 131, the temperature of the transparent glass substrate 111 can be measured while avoiding illumination light / transmission light of the light irradiator or the light detector 150.

<Temperature controller 180>
The temperature controller 180 controls energization of the heater power supply line (+) 116 and the heater power supply line (−) 117 (see FIG. 1) based on the temperature detected by the temperature sensor 118, and transparent conductive on the transparent glass substrate 111. The parallel electrodes 113 and 114 of the film 112 can be energized to set the temperature (for example, + 200 ° C.) at the time of the high temperature test.

<Electronic measuring instrument 190>
The electronic measuring instrument 190 is, for example, a semiconductor parameter analyzer or an impedance analyzer, and performs probing evaluation of electrical inspection, optical characteristics, and temperature-dependent characteristics of the light emitting / receiving element 11. Note that current-voltage characteristics, voltage-capacitance characteristics, and impedance characteristics of semiconductor elements other than the light emitting / receiving element 11 can be evaluated.

<Coolant circulation transparent glass jacket 200>
In the case where a low temperature test below room temperature is required, the coolant circulation transparent glass jacket 200 is attached to the wafer chuck unit 110.
As shown in FIGS. 6 (b) and 7 (b), the coolant circulation transparent glass jacket 200 is a transparent glass chamber, and has an input port 201 for cooling water (water, Fluorinert etc.) and an output port 202, And a cooling water circulation passage 203. The coolant circulating transparent glass jacket 200 has a rectangular parallelepiped structure having the same flat portion as the square shape of the wafer chuck unit 110, and is disposed in close contact with the wafer chuck unit 110 so as to cover almost the entire lower surface of the wafer chuck unit 110. Ru. The coolant circulation transparent glass jacket 200 circulates the cooling water from the input port 201 and the output port 202 to the cooling water circulation passage 203 to cool the wafer chuck unit 110 with water. The cooling water circulation passage 203 has a strip shape in cross section, and reduces the influence of light refraction in the vertical direction.

[Structure of Wafer Chuck Unit 110]
4 and 5 are sectional views showing the structure of the wafer chuck unit 110, and FIG. 4 (a) is a sectional view taken along the line A-A of FIG. 2 (a), and FIG. 4 (b) is FIG. BB sectional drawing, FIG.4 (c) is CC sectional drawing of Fig.2 (a). FIG. 5 (a) is an enlarged view of a main part of a portion enclosed by a broken line circle D in FIG. 4 (b), and FIG. 5 (b) is a main part of the portion enclosed by a broken line circle E in FIG. FIG.
As shown in FIG. 5, the wafer chuck unit 110 has a substantially square transparent glass substrate 111 (a translucent substrate) that transmits light, and a lower surface of the transparent glass substrate 111 (on the light irradiator or photodetector 150 side). Surface is formed parallel to the opposing end of the transparent conductive film (for example, ITO (Indium Tin Oxide) film) 112 and the substantially square transparent conductive film 112, and the transparent conductive film 112 is energized. And parallel electrodes 113 and 114. The transparent glass substrate 111, the transparent conductive film 112, and the parallel electrodes 113 and 114 constitute a transparent glass heater 115.

  The transparent glass substrate 111 uses quartz glass which is excellent in transparency, corrosion resistance, heat resistance and strain resistance as a glass substrate. The transparent glass substrate 111 has a function as a support substrate of the wafer chuck unit 110. For this reason, the transparent glass substrate 111 has a predetermined thickness (for example, 2 mm) that can resist the bending stress at the time of wafer chucking.

The transparent conductive film 112 is formed of an In ₂ O ₃ (ITO) film doped with Sn, for example, using an electron beam evaporation method, a physical vapor deposition method, a sputtering evaporation method, or the like on the lower surface of the transparent glass substrate 111.
The parallel electrodes 113 and 114 are electrodes provided at both ends of the transparent conductive film 112 by, for example, silver paste. The heater power supply line (+) 116 and the heater power supply line (−) 117 are connected to the parallel electrodes 113 and 114, respectively (see FIG. 1).
When a voltage is applied to the parallel electrodes 113 and 114, current flows through the transparent conductive film 112, generating Joule heat. The transparent glass substrate 111 is uniformly heated by the generated Joule heat.

  In addition, you may provide the glass cover which covers the lower surface of the transparent conductive film 112 in which the parallel electrodes 113 and 114 were formed. Although not shown, a transparent conductive film 112 may be provided on the upper surface (wafer 10 mounting surface) of the transparent glass substrate 111. In this case, a glass cover is provided to protect the transparent conductive film 112.

The operation of the light emitting / receiving element evaluation prober 100 configured as described above will be described below.
[Preparation]
FIG. 6 is a view for explaining a light receiving test of the back illuminated type light receiving element 11A, and FIG. 6 (a) shows a high temperature test, and FIG.
The light emitting / receiving element 11 of the wafer 10 of FIG. 1 is the back illuminated type light receiving element 11A in FIG. The light irradiator or light detector 150 of FIG. 1 is a light irradiator 150A in FIG.

  First, the light emitting / receiving element evaluation prober 100 (see FIG. 1) adjusts the positions of the fixed clamp 130 and the movable clamp 131 in accordance with the size of the diameter of the wafer 10. Specifically, as shown in FIG. 2 (a), when the size (wafer diameter) of the wafer 10 is large, the fixing clamp 130 fixes the flathead screw 130c at the left end of the long hole 130b. The movable clamp 131 fixes a flathead screw 131c at the right end of the long hole 131b. Further, as shown in FIG. 3, when the size (wafer diameter) of the wafer 10 is small, the fixed clamp 130 fixes the flat head screw 130c at the right end of the long hole 130b, and the movable clamp 131 has a long length. At the left end of the hole 131b, the flathead screw 131c is screwed and fixed. When there is no change in the size (wafer diameter) of the wafer 10, this clamp position adjustment can be omitted.

  The wafer 10 is placed on the upper surface of the wafer chuck unit 110. More specifically, as shown in FIG. 6A, one end of the wafer 10 is placed on the tapered surface 130 a of the fixed clamp 130. At this time, the movable clamp 131 moves the diameter of the wafer 10 outward of the wafer chuck unit 110 so that the other end of the wafer 10 can be placed on the upper surface of the wafer chuck unit 110. Then, the other end of the wafer 10 is placed, and the movable clamp 131 is released. Since the movable clamp 131 is biased toward the tension spring attaching portion 135 fixed to the bottom of the base 120 by the tension spring 136 via the shaft guide 134, the taper surface 131 a of the movable clamp 131 is the wafer 10. The other end is pushed toward the center of the wafer chuck unit 110.

  As shown in FIGS. 2 and 3, the fixed clamp 130 and the movable clamp 131 fix the wafer 10 mounted on the wafer chuck unit 110 regardless of the size (wafer diameter) of the wafer 10. 2 and 3 (P1 and P2 in FIGS. 2 and 3) and one point (P3 in FIGS. 2 and 3) of the tapered surface 131a of the movable clamp 131. In general, a three-point support creates one plane at three points that are not on a straight line, so it is considered stable without the center of gravity moving to another plane as in the case of multi-point support. In the case of the present embodiment, the fixed clamp 130 and the movable clamp 131 press the wafer 10 against the upper surface of the wafer chuck unit 110 at three points (P1 to P3 in FIGS. 2 and 3) on the outer periphery of the wafer 10. Since pressing is performed using three points on the outer periphery of the wafer 10, a stable chuck can be realized.

  As shown by the arrows in FIG. 6A, in the stationary clamp 130, when the corner of the side end of the wafer 10 is pressed against the downward tapered surface 130a, a stress is generated that causes the wafer 10 to move downward. Similarly, in the movable clamp 131, when the corner of the side end of the wafer 10 is pressed against the downward tapered surface 131a, a stress is generated to move the wafer 10 downward. Thus, when the tapered surface 130a of the fixed clamp 130 and the tapered surface 131a of the movable clamp 131 push the end of the wafer 10 from both sides, the wafer 10 is pressed against the upper surface of the wafer chuck unit 110 at both ends. It becomes a chuck.

  Here, as shown in FIG. 2 and FIG. 3, the fixed clamp 130 has its tapered surface 130a formed in a V-shape, whereby the wafer 10 is autonomously guided to the central portion of the V-shape. Can be placed at the central position of the wafer chuck unit 110.

[Light receiving test]
<High temperature test>
When the high temperature test is performed, the temperature controller 180 (see FIG. 1) generates a heater power line (+) 116 and a heater power line (−) 117 based on the temperature detected by the temperature sensor 118 attached to the wafer chuck unit 110. Control energization to (see FIG. 1). The temperature controller 180 energizes the parallel electrodes 113 and 114 of the transparent conductive film 112 on the transparent glass substrate 111 through the heater power supply line (+) 116 and the heater power supply line (-) 117 to set the temperature at the high temperature test (for example, +200 It sets to (degreeC) and the light reception test of the following back incidence type light receiving element 11A is done under this temperature.

As shown in FIG. 6A, the light irradiator 150A is powered on during the high temperature test of the back illuminated type light receiving element 11A. The light irradiator 150A irradiates the back illumination type light receiving element 11A of the wafer 10 with the test illumination light 151. The light irradiator 150A irradiates the test illumination light 151 inside the heating and cooling stage 140 (see FIG. 1).
The test illumination light 151 from the light irradiator 150A transmits the transparent conductive film 112 of the transparent glass heater 115 and the transparent glass substrate 111 (see FIG. 5), and the wafer 10 mounted on the upper surface of the transparent glass substrate 111 The light is irradiated to the corresponding back illuminated type light receiving element 11A. At this time, the illuminance of the test illumination light 151 is appropriately controlled by appropriately adjusting the voltage of the light irradiator 150A as necessary.
The corresponding back-illuminated light receiving element 11A receives the test illumination light 151, and outputs a signal according to the brightness of the illumination from the electrode (not shown) of the light receiving element. A signal from the element is detected through the probe 171, and in the on-wafer state, electrical inspection, optical characteristics, and temperature-dependent characteristics of the back illuminated photodetector 11A are probed and evaluated.
After that, the positioning stage 160 moves the heating and cooling stage 140 in the XYZθ directions, and sequentially performs a light receiving test of the next back illuminated photodetector 11A.

In addition, the setting temperature change of the high temperature test in the middle of the light reception test is also possible.
When changing the set temperature, the temperature controller 180 sets the target temperature and controls the energization of the heater power supply line (+) 116 and the heater power supply line (−) 117. Then, after confirming that the temperature detected by the temperature sensor 118 has reached the target temperature, a light receiving test of the back illuminated photodetector 11A is performed under this temperature. The transparent glass heater 115 has a good response to heating, and can cope with the change of the set temperature during the light reception test.

<High / low temperature test>
As shown in FIG. 6B, when the low temperature test at room temperature or lower is required, the high and low temperature test is performed in an environment where the wafer chuck unit 110 is provided with the coolant circulating transparent glass jacket 200. The coolant circulation transparent glass jacket 200 circulates the cooling water from the input port 201 and the output port 202 to the cooling water circulation passage 203 to cool the wafer chuck unit 110 with water.

  At the time of the high temperature test of the back illuminated type light receiving element 11A, the cooling water to the cooling liquid circulating transparent glass jacket 200 is not circulated. Since the coolant does not circulate even if the coolant circulation transparent glass jacket 200 is installed, the temperature of the coolant circulation transparent glass jacket 200 is kept in thermal equilibrium with the temperature of the wafer chuck unit 110 to conduct a high temperature test. be able to.

  At the time of a low temperature test of the back side incident type light receiving element 11A, a pump (not shown) is driven to circulate cooling water from the input port 201 and the output port 202 to the cooling water circulation passage 203 to water-cool the wafer chuck unit 110. By cooling the wafer chuck unit 110, a low temperature test of the back illuminated photodetector 11A of the wafer 10 mounted on the upper surface of the transparent glass substrate 111 can be performed.

  When the low temperature test is performed, the temperature controller 180 (see FIG. 1) generates a heater power line (+) 116 and a heater power line (−) 117 based on the temperature detected by the temperature sensor 118 attached to the wafer chuck unit 110. Control energization to (see FIG. 1). The temperature controller 180 energizes the parallel electrodes 113 and 114 of the transparent conductive film 112 on the transparent glass substrate 111 through the heater power supply line (+) 116 and the heater power supply line (−) 117 so as to The temperature is set to 40 ° C., and a light reception test of the back illuminated photodetector 11A is performed at this temperature.

As shown in FIG. 6B, the light irradiator 150A is powered on at the time of the high / low temperature test of the back illuminated type light receiving element 11A. The light irradiator 150A irradiates the back illumination type light receiving element 11A of the wafer 10 with the test illumination light 151.
The test illumination light 151 from the light irradiator 150A passes through the coolant circulating transparent glass jacket 200, the transparent conductive film 112 of the transparent glass heater 115 and the transparent glass substrate 111 (see FIG. 5), and the upper surface of the transparent glass substrate 111 Is irradiated onto the corresponding back-illuminated light receiving element 11A of the wafer 10 placed thereon.

The corresponding back-illuminated light receiving element 11A receives the test illumination light 151 and outputs a signal according to the brightness of the illumination from the electrode (not shown) of the light receiving element. A signal from the element is detected through the probe 171, and in the on-wafer state, electrical inspection, optical characteristics, and temperature-dependent characteristics of the back illuminated photodetector 11A are probed and evaluated.
After that, the positioning stage 160 moves the heating and cooling stage 140 in the XYZθ directions, and sequentially performs a light receiving test of the next back illuminated photodetector 11A.

In addition, the setting temperature change in the middle of the light reception test is also possible.
For example, when the set temperature is changed from the low temperature test to the high temperature test, the circulation of the cooling water to the cooling liquid circulation transparent glass jacket 200 is stopped, the temperature controller 180 sets the target temperature, and the heater power line (+ 116, control the energization of the heater power supply line (-) 117. Then, after confirming that the temperature detected by the temperature sensor 118 has reached the target temperature, a light receiving test of the back illuminated photodetector 11A is performed under this temperature. The transparent glass heater 115 has a good response to heating, and can cope with the change of the set temperature during the light reception test.

[Luminance test]
<High temperature test>
FIG. 7 is a view for explaining a light emission test of the back emission type light emitting element 11B, and FIG. 7 (a) shows a high temperature test and FIG. 7 (b) shows a high temperature test.
The light emitting / receiving element 11 of the wafer 10 of FIG. 1 is the back emission type light emitting element 11 B in FIG. 7. The light irradiator or light detector 150 of FIG. 1 is the light detector 150 B of FIG. 7.
When the high temperature test is performed, the temperature controller 180 (see FIG. 1) generates a heater power line (+) 116 and a heater power line (−) 117 based on the temperature detected by the temperature sensor 118 attached to the wafer chuck unit 110. Control energization to (see FIG. 1). The temperature controller 180 energizes the parallel electrodes 113 and 114 of the transparent conductive film 112 on the transparent glass substrate 111 through the heater power supply line (+) 116 and the heater power supply line (-) 117 to set the temperature at the high temperature test (for example, +200 The light emission test of the back surface emission type light emitting device 11B described below is performed under this temperature.

The light emitting / receiving element evaluation prober 100 (see FIG. 1) includes a driver of the back emission type light emitting element 11B, a signal generator (pattern generator), and a control unit (not shown) that controls these. Alternatively, the driver, the signal generator, and the control unit may be included in the electronic measuring instrument 190.
A plurality of connection terminals for applying a light emission test signal are formed on the upper surface of the outer peripheral portion of the probe card 170 (see FIG. 1), and the driver and the signal are connected to these connection terminals via an interface (not shown). The generators are connected in sequence. The pattern generator is controlled by the control unit. Under control of the control unit, the pattern generator generates various light emission test signals. These signals are applied from the probe card 170 to the backside emission type light emitting element 11B of the wafer 10 through the driver.

At the time of the test of the back surface emission type light emitting element 11B, a signal for light emission test is applied to the corresponding back surface emission type light emitting element 11B, and only the corresponding back surface emission type light emitting element 11B emits light. The illumination light 152 from the back emission type light emitting element 11B passes through the transparent glass substrate 111 (see FIG. 5) and the transparent conductive film 112 of the transparent glass heater 115, and the photodetector inside the heating and cooling stage 140 (see FIG. 1) Light is received at 150B. The photodetector 150 B receives the test illumination light 152 inside the heating / cooling stage 140.
The photodetector 150B receives the test illumination light 152, and the electronic measuring instrument 190 detects a signal according to the brightness of the illumination to electrically inspect the back emission type light emitting element 11B in the on-wafer state. Optical characteristics and temperature dependent characteristics are evaluated by probing.
After that, the positioning stage 160 moves the heating / cooling stage 140 in XY directions, and the light emission test of the next back surface emission type light emitting element 11B is sequentially performed.

<High / low temperature test>
As shown in FIG. 7B, when the low temperature test at room temperature or lower is required, the high temperature test is performed in an environment where the wafer chuck unit 110 is provided with the coolant circulating transparent glass jacket 200.
At the time of a low temperature test of the backside emission type light emitting element 11B, a pump (not shown) is driven to circulate cooling water from the input port 201 and the output port 202 to the cooling water circulation passage 203 to water-cool the wafer chuck unit 110. By cooling the wafer chuck unit 110, it is possible to conduct a low temperature test of the back surface emission type light emitting element 11B of the wafer 10 mounted on the upper surface of the transparent glass substrate 111.

  When the low temperature test is performed, the temperature controller 180 (see FIG. 1) generates a heater power line (+) 116 and a heater power line (−) 117 based on the temperature detected by the temperature sensor 118 attached to the wafer chuck unit 110. Control energization to (see FIG. 1). The temperature controller 180 energizes the parallel electrodes 113 and 114 of the transparent conductive film 112 on the transparent glass substrate 111 through the heater power supply line (+) 116 and the heater power supply line (−) 117 so as to The temperature is set to 40 ° C., and a light emission test of the backside emission type light emitting element 11B is performed under this temperature.

  As described above, the prober device 100 for light emitting / receiving element evaluation of the present embodiment includes the transparent glass heater 115 having the transparent glass substrate 111, the transparent conductive film 112 and the parallel electrodes 113 and 114, and the upper surface of the transparent glass substrate 111. The fixed clamp 130 for fixing the wafer 10 to be placed and the lower surface side of the transparent glass substrate 111 transmit the light through the transparent glass heater 115 to emit light to the light emitting / receiving element 11 or from the light emitting / receiving element 11 And a light irradiator or a light detector 150 for receiving the light of the above light through the transparent glass heater 115. The transparent glass heater 115, the fixed clamp 130 and the movable clamp 131 constitute a wafer chuck unit 110 (wafer chuck).

  With this configuration, in the wafer chuck unit 110, the structure made of the transparent glass substrate 111, the transparent conductive film 112, and the parallel electrodes 113 and 114 has the function as the transparent glass heater 115 capable of generating heat while transparent. The upper surface of the substrate 111 has a wafer chuck function to chuck the wafer 10 in combination with the fixed clamp 130 and the movable clamp 131. Furthermore, the wafer chuck unit 110 has a high transparency (substantially transparent) of the transparent glass substrate 111 and the transparent conductive film 112, so that the light of the light irradiator or the light detector 150 disposed below the wafer chuck unit 110. Does not interfere with That is, the wafer chuck unit 110 realizes a wafer chuck capable of simultaneously measuring the electrical inspection, optical characteristics, and temperature dependent characteristics of the light emitting / receiving element 11 in the on-wafer state with respect to the light emitting / receiving element 11 formed on the wafer 10 Can.

  The light emitting / receiving element evaluation prober 100 has a function of chucking the wafer 10 by the wafer chuck unit 110 on one side of a transparent and heatable translucent heating plate. Thus, the light emitting / receiving element 11 formed on the wafer 10 and the light irradiator or light detector 150 (photoelectric conversion device) are opposed to each other, and the light emitting / receiving element 11 formed on the wafer 10 is optically Properties or temperature dependent properties can be probed and evaluated.

Further, in the present embodiment, the probe 171 electrically contacting the specific portion of the light emitting / receiving element formed on the wafer 10, the light emitting / receiving element contacting the probe 171, and the light irradiator or the light detector 150 face each other. And a positioning stage 160 for moving the wafer chuck unit 110.
According to this, the wafer 10 can be moved using the positioning stage 160, and the light emitting / receiving element 11 formed on the wafer 10 can be opposed to the light irradiator or the light detector 150. Further, since the probe 171 and the specific part of the light emitting / receiving element 11 are in contact with each other, the electrical inspection of the light emitting / receiving element, optical characteristics and temperature dependent characteristics can be simultaneously measured in the on-wafer state.

Further, in the present embodiment, the probe 171 electrically contacting the specific portion of the light emitting / receiving element formed on the wafer 10 is opposed to the light irradiator or the light detector 150, and the wafer 10 is fixed. The transparent glass substrate 111 is provided with a positioning stage 160 that moves relative to the probe 171.
According to this, the probe 171 and the light irradiator or the light detector 150 can be made to face each other, and the probe 171 can be brought into contact with the specific part of the light emitting / receiving element 11. In addition, the positioning stage 160 can move the transparent glass substrate 111 on which the wafer 10 is fixed relative to the probe 171 so that the light emitting / receiving element 11 and the light irradiator or the light detector 150 face each other. be able to.

  Further, in the present embodiment, the translucent heating plate includes the translucent substrate, the transparent conductive film formed on the translucent substrate, and the electrode for energizing the transparent conductive film. For example, the transparent glass heater 115 including the transparent glass substrate 111, the transparent conductive film 112, and the parallel electrodes 113 and 114 can be used as the heat generating plate.

Further, in the present embodiment, the fixed clamp 130 and the movable clamp 131 of the wafer chuck unit 110 have end faces that abut the outer peripheral portion of the wafer 10, and the end faces are tapered surfaces 130a and 131a facing the transparent glass substrate 111 side. Have.
According to this, when the corner of the side edge of the wafer 10 is pressed against the tapered surfaces 130a and 131a, stress is generated in the wafer 10 to direct the wafer 10 downward (the transparent glass substrate 111 side), and the wafer 10 is transparent. The chuck can be pressed against the upper surface of the glass substrate 111.

Further, in the present embodiment, the light irradiator or the light detector 150 is either one of a light irradiator for irradiating the transparent glass substrate 111 with light and a light receiver for receiving the light transmitted through the transparent glass substrate 111.
According to this, even if the light emitting / receiving element 11 formed on the wafer 10 is either a back illuminated type light receiving element or a back emitting type light emitting element, electrical inspection of the light emitting / receiving element 11 in an on-wafer state, optical characteristics, And temperature dependent characteristics can be measured simultaneously.

Further, in the present embodiment, the wafer chuck unit 110 fixes the outer periphery of the wafer 10 in the first direction, and the movable clamp fixes the outer periphery of the wafer 10 in the second direction. And a clamp 131 (second clamp).
According to this, the fixed clamp 130 and the movable clamp 131 press the upper surface of the wafer chuck unit 110 (the upper surface of the transparent glass heater 115) while sandwiching the wafer 10 mounted on the wafer chuck unit 110 from both sides. And the wafer 10 can be chucked.

Further, in the present embodiment, the fixed clamp 130 (first clamp) has a first end face that abuts on the outer periphery of the wafer 10 at two points, and the first end face has a tapered surface facing the transparent glass substrate 111 side. The movable clamp 131 (second clamp) has a second end face that abuts on the outer peripheral portion of the wafer 10 at one point, and the second end face has a tapered surface facing the transparent glass substrate 111 side.
According to this, the tapered surface 130 a of the fixed clamp 130 is formed in a V-shaped central portion, and the wafer 10 in contact with the tapered surface 130 a is guided to the central portion of the V-shaped. Therefore, the wafer 10 is mounted at the central position of the wafer chuck unit 110 regardless of the size (wafer diameter) of the wafer 10. The central position of the wafer chuck unit 110 is a place where the temperature distribution in the plane is stabilized with the highest amount of heat when the wafer chuck unit 110 is heated by energization, and is suitable for probing evaluation of temperature-dependent characteristics.

Moreover, in the present embodiment, one of the fixed clamp 130 (first clamp) and the movable clamp 131 (second clamp) is a fixed clamp fixed to the mounting table of the wafer chuck unit 110, and the fixed clamp 130 and the movable clamp The other of the 131 (second clamp) is a movable clamp movable along the upper surface of the transparent glass substrate 111.
According to this, the fixed clamp 130 and the movable clamp 131 press the upper surface of the wafer chuck unit 110 (the upper surface of the transparent glass heater 115) while sandwiching the wafer 10 mounted on the wafer chuck unit 110 from both sides. And the wafer 10 can be chucked.

The present invention is not limited to the embodiment described above, and includes other modifications and applications without departing from the scope of the present invention described in the claims.
For example, part of the configuration of one embodiment can be replaced with the configuration of another embodiment, and the configuration of another embodiment can be added to the configuration of one embodiment. . Moreover, it is possible to add, delete, and replace other configurations for part of the configurations of the respective embodiment examples.

  Further, control lines and information lines indicate what is considered to be necessary for the description, and not all control lines and information lines in the product are necessarily shown. In practice, almost all configurations may be considered to be mutually connected.

(Modification)
The present invention is not limited to the embodiment described above, and various modifications can be made, for example, as follows.
(1) The light emitting / receiving element 11 formed on the wafer may be light other than visible light, for example, infrared rays for communication (InGaAs on InP (for light reception), InGaAsP on InP (for light emission)).

(2) In the present embodiment, a transparent glass heater is used as the transparent heating plate, but a transparent resistive film other than ITO may be used. Also, the transparent glass heater is not limited to the transparent glass substrate. For example, if it is a long wavelength of 1.13 [μm] or more, an n-doped semiconductor substrate may be used as the Si substrate.

(3) In the present embodiment, the wafer 10 is moved to the upper surface of the wafer chuck unit 110 by sandwiching the both ends of the wafer 10 with the tapered surface 130 a of the fixed clamp 130 and the tapered surface 131 a of the movable clamp 131 with a predetermined force. A force is generated and this force is used as a wafer chuck. For this reason, although it is possible to use instead of the chuck | zipper by vacuum suction, it can also be used together.

(4) The coolant circulation transparent glass jacket 200 according to the present embodiment uses the coolant, but may be made to flow cooling air.

DESCRIPTION OF SYMBOLS 10 wafer 11 light emitting / receiving element 11A back incidence type light receiving element 11B back emission type light emitting element 100 prober for light emitting / receiving element evaluation 111 transparent glass substrate (light transmitting substrate)
112 Transparent conductive film 113, 114 Parallel electrode 115 Transparent glass heater (translucent heating plate)
118 Temperature sensor 120 Base 130 Fixed clamp (fixed part, first clamp)
130a, 131a Tapered surface 131 Movable clamp (fixed part, second clamp)
140 heating / cooling stage 140a opening 150 light irradiator or light detector (photoelectric conversion device)
155 Photoelectric Conversion Device Mounting Stage 160 Positioning Stage (Moving Stage)
171 probe 170 probe card 180 temperature controller 190 electronic measuring instrument 110 wafer chuck unit (fixed part)
200 coolant circulation transparent glass jacket

To achieve the above object, one aspect of the present invention, there is provided a prober for measuring the temperature dependence of the light emitting device formed on the wafer, and the transparent heating plate, the transparent heating plate A fixing portion for fixing the wafer placed on one surface of the light-transmitting plate, and a light detector disposed on the other surface side of the translucent heating plate.

In order to achieve the above object, one means of the present invention is a prober apparatus for measuring the temperature dependency of a light emitting element formed on a wafer, which comprises a translucent heating plate and the translucent heating plate a fixing unit for fixing the wafer to be placed on the one side, and a light detector arranged on the other surface side of the translucent heating plate, wherein the light-transmitting heat plate, the light A transparent glass plate disposed on the side of the detector, and a transparent conductive film provided on the side of the light emitting element of the transparent glass plate .

Claims (11)

A prober apparatus for measuring the temperature dependency of one or both of an electrical inspection and an optical characteristic of a light emitting and receiving element formed on a wafer, comprising:
A translucent heating plate,
A fixing portion for fixing the wafer placed on one surface of the translucent heating plate;
A photoelectric conversion device disposed on the other surface side of the translucent heating plate;
A prober apparatus comprising: A probe electrically contacting a specific portion of a light emitting / receiving element formed on a wafer;
The prober apparatus according to claim 1, further comprising: a moving stage configured to move the translucent heating plate such that the light emitting / receiving element in contact with the probe and the photoelectric conversion device face each other. A probe electrically contacting a specific portion of the light emitting / receiving element formed on the wafer and the photoelectric conversion device facing each other;
The prober apparatus according to claim 1, further comprising a moving stage that moves the translucent heating plate to which the wafer is fixed relative to the probe. The light transmitting heating plate includes a light transmitting substrate, a transparent conductive film formed on the light transmitting substrate, and an electrode for energizing the transparent conductive film. The prober apparatus according to any one of 3. The fixing portion includes an end face that abuts on an outer peripheral portion of the wafer;
The prober apparatus according to any one of claims 1 to 4, wherein the end face has a tapered surface facing the translucent heating plate side. The photoelectric conversion device is any one of a light emitting device for emitting light to the light transmitting heating plate and a light receiving device for receiving light transmitted through the light transmitting heating plate. A prober apparatus according to any one of the preceding claims. The fixed part is
The prober according to claim 5, further comprising: a first clamp that fixes the outer peripheral portion of the wafer in a first direction; and a second clamp that fixes the outer peripheral portion of the wafer in a second direction. apparatus. The first clamp is
And a first end face that abuts on the periphery of the wafer at two points,
The first end face has a tapered surface facing the translucent heating plate side,
The second clamp is
A second end face that abuts on the outer periphery of the wafer at one point;
The prober apparatus according to claim 7, wherein the second end face has a tapered surface facing the translucent heating plate side. One of the first clamp and the second clamp is
It is a fixed clamp fixed to the mounting base of the said translucent heating plate,
The other of the first clamp and the second clamp is
The prober apparatus according to claim 7, wherein the prober apparatus is a movable clamp movable along an upper surface of the translucent heating plate. A wafer chuck used for a wafer temperature characteristic test,
A translucent heating plate having a translucent substrate, a transparent conductive film formed on the translucent substrate, and an electrode for energizing the transparent conductive film;
A fixing portion for fixing the wafer placed on one surface of the light transmitting substrate;
A wafer chuck comprising: The fixed part is
And an end face in contact with the outer peripheral portion of the wafer,
11. The wafer chuck according to claim 10, wherein the end face has a tapered surface facing the light transmitting substrate side.

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