KR101229904B1 - Apparatus for measuring optical parameters of light-emitting element and measuring method using the same - Google Patents

Abstract

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an optical measuring apparatus including a mounting table for mounting an optical detection device and at least one semiconductor light emitting device and measuring various optical parameters of the semiconductor light emitting device, and a measuring method using the same. A reflecting device is further provided on the upper surface of the mounting table corresponding to) to reflect the bottom light beam of the semiconductor light emitting element so that some light beams are irradiated to the optical measuring device, thereby improving the accuracy of measuring the optical parameters.

Description

Optical measuring equipment and measuring method using the same {APPARATUS FOR MEASURING OPTICAL PARAMETERS OF LIGHT-EMITTING ELEMENT AND MEASURING METHOD USING THE SAME}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to optical measurement techniques, and more particularly, to an apparatus and method for measuring light parameters of semiconductor light emitting devices.

Measurement of the light parameters of a general light source is performed by mounting a light integrating sphere into the detector. The integrating sphere is a sphere in which an input hole and an output hole are opened, and a barium sulphate coating layer having a high reflectance is uniformly coated on the inner wall of the sphere, and a detector is installed in the output hole. Therefore, the light rays emitted from the light source to be measured are incident on the integrating sphere from the input hole and then uniformly reflected and diffused in the integrating sphere. Therefore, the detector can accurately measure optical parameters such as intensity, illuminance, etc. of the light source emitting light.

As a facility and a measuring method for measuring light parameters of a conventional semiconductor light emitting device, for example, US Patent No. 6,734,959 discloses the following. A semiconductor light emitting element is provided on a mounting table, an integrating sphere corresponds to the upper side of the semiconductor light emitting element, and each light emitting unit of the semiconductor light emitting element is turned on and turned on by two probes, and then the light emitting unit is emitted to the integrating sphere. A partial ray of light is collected to measure the light parameters.

In fact, most of the semiconductor light emitting device emits 360 degrees, but since the probe is present, the semiconductor light emitting device cannot be mounted in the integrating sphere, so that the light receiving is not completed. In view of the conventional optical measuring equipment, the light receiving angle composed of the outer peripheral edge of the input hole of the integrating sphere and the center of the semiconductor light emitting element is only 12 ° to 120 °. In other words, the conventional optical measuring equipment is not only able to collect light rays other than the angle described above, but also measures only light rays emitted from the upper portion of the semiconductor light emitting device. Therefore, since the light beam emitted from the bottom part of the said semiconductor light emitting element cannot be measured at all, measurement accuracy falls a lot.

On the other hand, since the light shapes of the different light emitting devices are not the same in the yield of the manufacturing process restricted by the semiconductor light emitting device, there is a difference in the ratio of the light emitted from the top and the bottom, and the finished product after packaging is applied to the light emitted from the bottom. do. Therefore, if the light emitted from the bottom of the semiconductor light emitting device is not included in the measurement range, an error occurs in the measurement of various optical parameters, so the operator has difficulty in managing the quality.

An object of the present invention is to provide an optical measuring device and a measuring method using the same, which collect and measure light rays emitted from an upper surface and a bottom of a semiconductor light emitting device at the same time to improve the accuracy of the measurement.

Another object of the present invention is to provide an optical measuring device having a low conversion cost and a measuring method using the same, since the present invention slightly improves the existing measuring device.

In order to realize the above object, the present invention includes a mounting table for mounting one or more semiconductor light emitting devices and an optical detection device, the optical parameters of the semiconductor light emitting device for measuring the optical parameters and corresponding to the bottom of the semiconductor light emitting device Provided is an optical measuring instrument further equipped with a reflector on the top of the mount.

The present invention also includes the steps of installing at least one semiconductor light emitting device on the upper surface of the mounting table is installed; Mapping an optical detection device to the semiconductor light emitting element; And the optical detection device operates the corresponding semiconductor light emitting device, and the reflecting device reflects or scatters light rays at the bottom of the semiconductor light emitting device so that some light rays are irradiated to the optical detection device and then the optical detection. An optical measuring method for measuring an optical parameter of a semiconductor light emitting device comprising measuring the optical parameter with an apparatus.

Therefore, the present invention only needs to install a reflecting device on the mounting table of the existing measuring equipment. The object of the present invention is achieved by reflecting or scattering light rays emitted from the bottom of the semiconductor light emitting device using the reflecting device to improve the accuracy of the measurement and to reduce the switching cost.

Among them, the reflector is a barium sulphate, distributed Bragg reflectors (DBR), a metal reflector (Metallic Reflector) or a metal reflector layer, a transparent layer, a protective layer.

According to the present invention, it is possible to provide an optical measuring device and a measuring method using the same, which simultaneously collects and measures light rays emitted from an upper surface and a bottom of a semiconductor light emitting device to improve measurement accuracy. In addition, the present invention can provide an optical measuring device with a low conversion cost and a measuring method using the same because it slightly improves the existing measuring equipment.

1 is a schematic diagram of a plant used in a preferred embodiment of the present invention.
2 is a cross-sectional view of the mounting table according to the first embodiment of the present invention.
3 is a schematic view of directly mounting a semiconductor light emitting device on a mounting table according to the first embodiment of the present invention.
4 is a cross-sectional view of the mounting table according to the second embodiment of the present invention.
5 is a cross-sectional view of the mounting table according to the third embodiment of the present invention.
6 is a cross-sectional view of the mounting table according to the fourth embodiment of the present invention.

BRIEF DESCRIPTION OF DRAWINGS To better understand the features of the present invention, the following description is made in conjunction with the accompanying drawings.

Referring to FIG. 1, an optical measuring device according to the present invention includes an optical detecting device 20 and a mounting table 30. Here, at least one semiconductor light emitting device 50 is mounted on the mounting table 30, and a reflecting device 31 is further provided on an upper surface of the mounting table 30 corresponding to the bottom of the semiconductor light emitting device. The optical detection device 20 is located at one side of the semiconductor light emitting device 50 that is relatively far from the mounting table 30. In addition, the optical detection device 20 includes two probes 21, an integrating sphere 22 and a detector 23. Here, an input hole 221 is formed in the integrating sphere, and the detector 23 is mounted on one side of the integrating sphere 22 corresponding to the input hole 221, and the detector 23 is an optical power meter. Detectors such as power meters or photo detectors can be used. It should be explained here that the optical detection device 20 according to the present invention does not necessarily include the integrating sphere 22. The detailed structure and operating principle of the optical detection device 20 belong to the prior art and thus will not be described in detail here.

[First Embodiment]

Referring to FIG. 2, in the first embodiment of the present invention, a reflecting apparatus 31 is installed on the upper surface of the mounting table 30 to reflect the light emitted from the bottom of the semiconductor light emitting device 50 to detect the optical. Irradiation with the device 20 increases the amount of light collected by the integrating sphere 22 and improves the measurement accuracy of the light parameters. The reflecting apparatus 31 according to the present exemplary embodiment is a distributed Bragg reflector (DBR), and thus is a multi-film material in which different optical media are alternately stacked to provide high quality reflective effects.

Meanwhile, the reflecting apparatus 31 according to the above-described embodiment may be replaced with a metallic reflector.

In further detail, the present embodiment may further include an adhesive film 40 made of a light-transmissive material, the light transmittance of the adhesive film is at least 40% or more, in this embodiment is 80%. One surface of the adhesive film 40 may be adhesive to fix one or more semiconductor light emitting devices 50 to each other. The semiconductor light emitting device 50 and the adhesive film 40, which are adhesively fixed, are mounted on the upper surface of the mounting table 30 again. However, the mounting table 30 may be directly mounted a wafer including a plurality of semiconductor light emitting devices. As shown in Fig. 3, the wafer includes a plurality of light emitting units 51 (i.e., semiconductor light emitting elements to be divided). In this case, the adhesive film 40 may not be used.

[Second Embodiment]

Referring to FIG. 4, although the reflecting apparatus 31 is provided on the upper surface of the mounting table 30 according to the second exemplary embodiment of the present invention, the reflecting apparatus 31 is a metal reflecting layer if it is different from the first exemplary embodiment. And a light transmitting layer 33 formed on the metal reflective layer 32.

In the present embodiment, the light transmitting layer 33 is glass, quartz or polyethylene terephthalate (PET), polyvinyl chloride (PolyVinyl Chloride, PVC) or ethylene-vinyl acetate (Ethylene Vinyl Acetate, EVA) copolymer It is made of a multi-molecular material capable of transmitting light such as. The metal reflective layer 32 is made of a metal having high light reflectivity such as aluminum (Al), silver (Ag), chromium (Cr), gold (Au), or rhodium (Rh), and the metal reflective layer 32 Silver may be formed on the surface immediately above the mounting table 30 by a physical or chemical method such as electroplating or sputtering, vapor deposition, etc. The metal reflective layer 32 may be formed by coating the light-transmitting layer 33 thereon. It is possible to prevent the problem of being oxidized, vulcanizing and deteriorating reflectance in contact with air.

Alternatively, the metal reflecting layer 32 is formed on one surface of the light transmitting layer 33 by physical or chemical methods such as electroplating, sputtering, and deposition, and then together with the light transmitting layer 33 of the mounting table 30. It may be coated on the top surface.

Third Embodiment

Referring to FIG. 5, a reflecting apparatus 31 is also provided on the upper surface of the mounting table 30 according to the third embodiment of the present invention. The reflecting apparatus 31 is composed of a light transmitting layer 33, a metal reflecting layer 32 and a protective layer 34 in order from top to bottom, wherein the metal reflecting layer 32 is made of a metal having a relatively high light reflectance. do. The protective layer is generally used to form a dielectric protective layer such as titanium (Ti), gold (Au), platinum (Pt), tungsten (W), silicon dioxide (SiO ₂ ), or silicon nitride (Si ₃ N ₄ ). It is made of a material.

Here, the manufacturing process of the reflecting apparatus 31 according to the present embodiment will be further described. First, the metal reflective layer 32 is formed on the surface of the light-transmitting layer 33, and then the protective layer (3) is formed on the surface of the metal reflective layer 32 by physical or chemical methods such as electroplating, sputtering, and deposition. 34 to prevent the metal reflective layer 32 from oxidizing. After the reflecting device 31 is manufactured, the reflecting device 31 is mounted on the surface of the mounting table 30 to reflect the light rays emitted from the bottom of the semiconductor light emitting device 50.

[Fourth Embodiment]

In addition, referring to FIG. 6, a concave groove 35 is further formed on the upper surface of the mounting table 30 according to the fourth embodiment of the present invention to accommodate the reflection device 31 and fix its position. have. The manufacturing process of the reflecting apparatus 31 is as described above.

In the above first to fourth embodiments, the present invention can be used to measure the semiconductor light emitting element 50 and the plurality of light emitting units 51 on the wafer of the semiconductor light emitting element. In addition, the adhesive film 40 and the at least one semiconductor light emitting device 50 may be mounted at positions corresponding to the reflecting device 31 to achieve the object and the desired effect of the present invention.

In addition, according to the present invention, one or more light reflecting elements are disposed around the semiconductor light emitting device 50 to reflect the light emitted by the semiconductor light emitting device 50 to the optical detection device 20. The amount of light rays collected by the optical detection device 20 can be increased. The present invention further provides an optical measuring method using the optical measuring equipment 10 described above. The optical measuring method,

a) installing one or more semiconductor light emitting devices 50 on the reflecting device 31 of the mounting table 30;

b) matching the input hole (221) of the integrating sphere (22) of the optical detection device (20) to the semiconductor light emitting device (50); And

c) electrically connecting and operating the semiconductor light emitting device 50 with the two probes 21. At this time, the semiconductor light emitting device 50 is turned on and light is emitted from the top and bottom of the semiconductor light emitting device, and the reflector 31 located at the bottom of the semiconductor light emitting device 50 is connected to the semiconductor light emitting device ( After receiving the light beam from the bottom of the 50, it is reflected back to the integrating sphere 22 of the optical detection device 20 to direct the light beam. The detector 23 of the optical detection device 20 measures the light parameters with respect to the collected light rays.

From this, the present invention installs a reflecting device having a high reflection quality on the mounting table, so that the light beam emitted from the bottom of the semiconductor light emitting device is reflected upward so that the optical detection device collects the light from the bottom of the semiconductor light emitting device. In addition to improving the accuracy of the measurement, there is no need to replace the existing measuring equipment, and a small improvement is required, resulting in low conversion costs.

10: optical measuring equipment
20: optical detection device 21: probe
22: integrating sphere 221: input hole
23: Detector
30: mount 31: reflector
32: metal reflector 33: light transmitting layer
34: protective layer 35: recessed groove
40: adhesive film
50 semiconductor light emitting element 51 light emitting unit

Claims (30)

An optical measuring apparatus comprising a mounting table having an upper surface on which at least one semiconductor light emitting device is mounted, and an optical detection device, the optical measuring device measuring optical parameters of the semiconductor light emitting device,
On the upper surface of the mounting table corresponding to the bottom of the semiconductor light emitting element, an adhesive film which can transmit light and has an adhesive and a reflecting device exhibiting a continuous planar shape are provided. Bonded to an adhesive film, and reflecting the light rays emitted from the bottom of the semiconductor light emitting element by the reflecting device so as to be irradiated to the optical detecting device. The method of claim 1,
And said reflecting device is a distributed Bragg reflector. The method of claim 1,
The reflecting device is an optical measuring device, characterized in that the barium sulfate (Barium sulphate) reflecting layer. The method of claim 1,
And said reflecting device is a metal reflecting layer. 5. The method of claim 4,
The metal reflective layer is made of one of aluminum (Al), silver (Ag), chromium (Cr), gold (Au), or rhodium (Rh). 5. The method of claim 4,
The metal reflecting layer is provided on the upper surface of the mounting table, and the optical measuring equipment, characterized in that the light transmitting layer is formed on the upper surface of the metal reflecting layer. The method according to claim 6,
The light transmitting layer is optical measurement, characterized in that made of one of glass, quartz, polyethylene terephthalate (PET), polyvinyl chloride (PVC), or ethylene vinyl acetate (Ethylene Vinyl Acetate) copolymer equipment. The method according to claim 4 or 5,
And the metal reflective layer is formed by electroplating or physical vapor deposition. The method according to claim 4 or 5,
The metal reflective layer is optical measuring equipment, characterized in that formed by chemical vapor deposition (chemical vapor deposition) method. The method according to claim 4 or 6,
And the reflecting device further comprises a protective layer located between the metal reflecting layer and the mount. The method of claim 10,
The protective layer is optical measuring equipment, characterized in that made of one of titanium (Ti), gold (Au), platinum (Pt), tungsten (W), silicon dioxide (SiO ₂ ), or silicon nitride (Si ₃ N ₄ ). The method of claim 11,
The protective layer is optical measuring equipment, characterized in that formed by the method of electroplating or physical vapor deposition. The method of claim 11,
The protective layer is optical measuring equipment, characterized in that formed by chemical vapor deposition (chemical vapor deposition) method. The method of claim 1,
The optical transmittance of the said adhesive film is 40% or more. 15. The method of claim 14,
The optical transmittance of the said adhesive film is 80% or more. The method of claim 1,
At least one light reflecting element is provided around the semiconductor light emitting element. In the optical measuring method for measuring the light parameter of the semiconductor light emitting device,
One or more semiconductor light emitting devices are fixed to the upper surface of the mounting table by using an adhesive adhesive film that can transmit light, and planar shape is continuous to the upper surface of the mounting table corresponding to the bottom of the semiconductor light emitting device. Installing a reflecting device indicative of;
Providing an optical detection device opposite the semiconductor light emitting element; And
The optical detection device operates the semiconductor light emitting device facing each other, and the reflecting device reflects or scatters the light rays of the bottom of the semiconductor light emitting device so that some light beams are irradiated to the optical detection device, and then the optical detection device Optical measuring method comprising measuring a parameter. 18. The method of claim 17,
The reflecting device is an optical measuring method, characterized in that the Distributed Bragg Reflectors (Distributed Bragg Reflectors). 18. The method of claim 17,
The reflecting device is a barium sulfate (Barium sulphate) reflective layer, characterized in that the optical measuring method. 18. The method of claim 17,
And the reflecting device is a metal reflecting layer. 21. The method of claim 20,
The metal reflective layer is made of one of aluminum (Al), silver (Ag), chromium (Cr), gold (Au), or rhodium (Rh). 21. The method of claim 20,
The metal reflective layer is provided on the upper surface of the mounting table, and the optical measuring method, characterized in that the light transmitting layer is formed on the upper surface of the metal reflective layer. The method of claim 22,
The light transmitting layer is optical measuring method, characterized in that made of one of glass, quartz, polyethylene terephthalate, polyvinylchloride, or ethylene-vinyl acetate (Ethylene Vinyl Acetate) copolymer. The method of claim 20 or 22,
And the reflecting apparatus further comprises a protective layer positioned between the metal reflecting layer and the mounting table. 25. The method of claim 24,
The protective layer is optical measuring method, characterized in that made of one of titanium (Ti), gold (Au), platinum (Pt), tungsten (W), silicon dioxide (SiO ₂ ), or silicon nitride (Si ₃ N ₄ ). 18. The method of claim 17,
The optical detecting device comprises an integrating sphere (Light Integrating Sphere) and a detector to collect the light and measuring the light collected by the integrating sphere. 18. The method of claim 17,
The optical detection device further comprises two probes for operating the semiconductor light emitting element to emit light. 18. The method of claim 17,
The optical transmittance of the said adhesive film is 40% or more, The optical measuring method characterized by the above-mentioned. 29. The method of claim 28,
The optical transmittance of the said adhesive film is 80% or more, The optical measuring method characterized by the above-mentioned. 18. The method of claim 17,
At least one light reflecting element is provided around the semiconductor light emitting element.

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