CN102072811A - Optical detection device and detection method by applying same - Google Patents
Optical detection device and detection method by applying same Download PDFInfo
- Publication number
- CN102072811A CN102072811A CN2009102264291A CN200910226429A CN102072811A CN 102072811 A CN102072811 A CN 102072811A CN 2009102264291 A CN2009102264291 A CN 2009102264291A CN 200910226429 A CN200910226429 A CN 200910226429A CN 102072811 A CN102072811 A CN 102072811A
- Authority
- CN
- China
- Prior art keywords
- detection apparatus
- optical detection
- optical
- bearing seat
- semiconductor luminous
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Abstract
The invention relates to an optical detection device and method. The optical detection device is used for measuring optical parameters of a semiconductor light-emitting assembly and comprises an optical detector and a bearing seat used for bearing at least half of the semiconductor light-emitting assembly, the top surface of the bearing seat, which corresponds to the bottom of the semiconductor light-emitting assembly, is provided with a reflection device used for reflecting light rays from the bottom of the semiconductor light-emitting assembly to make part of the light rays shining to the optical detector, and thereby the accuracy of the optical parameter measurement is improved.
Description
Technical field
The present invention is relevant with optical detective technology, particularly, is meant a kind of optical parameter measurement equipment and method of semiconductor luminous assembly.
Background technology
It is to be undertaken by integrating sphere (Light Integrating Sphere) collocation one detector that the optical parameter of general light source measures, integrating sphere is the spheroid that offers an input hole and a delivery outlet, sphere inner wall then evenly is coated with the barium sulphate coating of high reflectance, and detector then is arranged at delivery outlet.Therefore, when light that light source to be measured sends after this input hole is incident in integrating sphere, will reflect equably and diffusion in integrating sphere inside, thereby can accurately measure the optical parameter such as intensity, illumination of light that this light source is exported by this detector.
The optical parameter measurement equipment and the method for known semiconductor luminous assembly, as United States Patent (USP) the 6th, 734, No. 959 patent of invention discloses, the semiconductor luminescence component is to be placed on the load bearing seat, one integrating sphere is then aimed at this semiconductor luminous assembly top, uses two probes conduction to light on this semiconductor luminous assembly after each luminescence unit, and the part light of collecting to send from this luminescence unit by this integrating sphere carries out optical parameter and measures again.
In fact, it is luminous that semiconductor luminous assembly mostly is 360 degree, yet, because the existence of probe, and then cause semiconductor luminous assembly to carry out complete receipts light in the middle of can't inserting integrating sphere.With existing optical detection apparatus, the receipts optic angle degree that the input hole outer peripheral edges of integrating sphere and this semiconductor luminous assembly center are constituted only has 12 °～120 °, in other words, known optical detection apparatus can't be collected the light beyond the aforementioned receipts optic angle degree at all, and be merely able to measure the light that this semiconductor luminous assembly top is sent, can't measure the light that this semiconductor luminous assembly bottom is sent fully, therefore the accuracy of measurement has a greatly reduced quality.
In addition, be subject to the process rate of semiconductor luminous assembly, the light shape of different luminescence components is not quite similar, the ratio of top and bottom-emission also has difference, and the finished product after the encapsulation will be applied to the light that the bottom is sent, therefore, if the light that the semiconductor luminous assembly bottom can't be sent is included measuring range in, the error that causes every optical parametric to measure will cause very big puzzlement for the dealer in the quality management and control.
Summary of the invention
The object of the present invention is to provide a kind of optical detection apparatus and use this Device Testing method, simultaneously the light that sent of collection semiconductor luminescence component top and bottom and measuring improves the accuracy that measures.
Another object of the present invention is to provide a kind of optical detection apparatus and use this Device Testing method, it is just slightly modification of the checkout equipment of script do only, and conversion cost is cheap.
For achieving the above object, the optical detection apparatus of measurement semiconductor luminous assembly optical parameter provided by the invention, include a load bearing seat that is used for carrying at least one semiconductor luminous assembly, and an optical detection apparatus, this optical detection apparatus is characterised in that: this load bearing seat more is provided with an anti-Installed of penetrating to end face that should the semiconductor luminous assembly bottom and puts.
The optical detecting method of measurement semiconductor luminous assembly optical parameter provided by the invention, its step comprises:
At least semiconductor luminescence component is positioned over the end face of a load bearing seat, and the end face of this load bearing seat is provided with an anti-Installed of penetrating and puts;
One optical detection apparatus is aimed at this semiconductor luminous assembly;
Start this semiconductor luminous assembly that this optical detection apparatus is aimed at, simultaneously, this anti-Installed of penetrating puts reflection or the bottom light of this semiconductor luminous assembly of scattering (scatter) and this optical detection apparatus of part directive carries out optical parameter with this optical detection apparatus again and measures.
Therefore, the present invention only needs to be provided with anti-She Installed and puts and get final product on the load bearing seat of original checkout equipment, use this anti-She Installed and put and reflect or light that scattering semiconductor luminous assembly bottom is sent, and then improve the accuracy of measurement, conversion cost is cheap, thereby reaches purpose of the present invention.
Wherein, this anti-She Installed put can adopt barium sulphate, distributed Bragg reflection horizon (DistributedBragg Reflectors, DBR), metallic reflector (Metallic Reflector) or composite structure that metallic reflector and photic zone, protective seam constituted.
Description of drawings
Fig. 1 is the employed equipment synoptic diagram of preferred embodiment of the present invention;
Fig. 2 is the cut-open view of load bearing seat in the first embodiment of the invention;
Fig. 3 is the synoptic diagram that the load bearing seat of first embodiment of the invention directly carries the semiconductor luminescence component;
Fig. 4 is the cut-open view of load bearing seat in the second embodiment of the invention;
Fig. 5 is the cut-open view of load bearing seat in the third embodiment of the invention;
Fig. 6 is the cut-open view of load bearing seat in the fourth embodiment of the invention.
Primary clustering symbol description in the accompanying drawing
10 optical detection apparatus; 20 optical detection apparatus; 21 probes; 22 integrating spheres; 221 input holes; 23 detectors; 30 load bearing seats; 31 anti-She Installed put; 32 metallic reflectors; 33 photic zones; 34 protective seams; 35 grooves; 40 glued membranes; 50 semiconductor luminous assemblies; 51 luminescence units.
Embodiment
In order more to understand characteristics of the present invention place, act is described as follows with next preferred embodiment and conjunction with figs..
See also Fig. 1, a kind of optical detection apparatus provided by the present invention includes an optical detection apparatus 20 and a load bearing seat 30.Wherein, this load bearing seat 30 can be in order to carry at least one semiconductor luminous assembly 50, and 30 pairs of this load bearing seats should the semiconductor luminous assembly bottom end face also be provided with an anti-Installed of penetrating and put 31, and being positioned at this semiconductor luminous assembly 50, this optical detection apparatus 20 is away from one of this load bearing seat 30 side relatively, and this optical detection apparatus 20 includes two probes 21, one integrating sphere 22 and a detector 23, this integrating sphere offers an input hole 221,23 of this detectors are installed on this integrating sphere side of this input hole 221 relatively, and this detector 23 can be the detector that light power meter (optical power meter) or light detect meter (photo detector) and so on.Must be noted that for the present invention this optical detection apparatus 20 not necessarily will comprise this integrating sphere 22.Because the detailed structure and the principle of work of this optical detection apparatus 20 are known technologies, do not give unnecessary details in this plan.
First embodiment provided by the present invention, please refer to Fig. 2, the end face of this load bearing seat 30 is provided with an anti-She Installed and puts 31, this optical detection apparatus 20 of directive in order to reflect the light that sends these semiconductor luminous assembly 50 bottoms increases these integrating sphere 22 collected light amounts and improves the accuracy that optical parameter measures.It is that (DistributedBragg Reflectors, DBR), the multi-layer film material of alternately being made up of the different optical medium is to provide high-quality reflecting effect in a distributed Bragg reflection horizon in present embodiment that this anti-Installed of penetrating puts 31.
In addition, the anti-She Installed of previous embodiment puts 31 and also can use metallic reflector (MetallicReflector) instead.
Explanation is in addition, and present embodiment also includes by the made glued membrane 40 of light-transmitting materials, and the penetrability of this glued membrane is at least more than 40%; In the present embodiment, its penetrability is 80%; And these glued membrane 40 one sides have tackness, can be used to stick fixing more than one semiconductor luminous assembly 50, again this semiconductor luminous assembly 50 and glued membrane 40 are placed in this load bearing seat 30 end faces jointly; But, this load bearing seat 30 also can directly carry the silicon chip (wafer) that comprises a plurality of semiconductor luminous assemblies, have most luminescence units 51 (being semiconductor luminous assembly to be cut) on the silicon chip, as shown in Figure 3, under this situation, will not need to use this glued membrane 40.
Please refer to Fig. 4, load bearing seat 30 end faces of second embodiment of the invention are provided with an anti-She Installed equally and put 31, and its main difference is: it is by a metallic reflector 32 that this anti-She Installed puts 31, and 33 the common formations of a photic zone that are positioned at metallic reflector 32 tops.
In the present embodiment, this photic zone 33 is by glass, quartz, perhaps polyethylene terephthalate (Polyethylene Terephthalate, PET), Polyvinylchloride (PolyVinyl Chloride, PVC), (Ethylene Vinyl Acetate EVA) waits the polymolecular material of light-permeable made to vinyl-vinyl acetate copolymer.To penetrate the metal of rate made for aluminium (Al), silver (Ag), chromium (Cr), rhodium (Rh) etc. have high light for 32 of this metallic reflectors, and this metallic reflector 32 can be electroplated, perhaps physics such as sputter, evaporation or chemical method and directly be formed at the end face of this load bearing seat 30, cover the problem that oxidation, sulfuration and the reflectivity that can avoid this metallic reflector 32 to cause because of ingress of air descends again with this photic zone 33.
Perhaps, this metallic reflector 32 can also be electroplated, and perhaps physics such as sputter, evaporation or chemical method and be formed at the one side of this photic zone 33 are with being about to the end face that this photic zone 33 and this metallic reflector 32 are covered in this load bearing seat 30 in the lump.
Please refer to Fig. 5 again; load bearing seat 30 end faces that third embodiment of the invention provided are provided with an anti-She Installed equally and put 31; and this anti-She Installed puts 31 is from top to bottom to be a photic zone 33, a metallic reflector 32 and a protective seam 34 in regular turn; this metallic reflector 32 is similarly to have high light to penetrate the metal of rate made, and this protective seam is then by titanium (Ti), gold (Au), platinum (Pt), tungsten (W), silicon dioxide (SiO
2) or silicon nitride (Si
3N
4) wait the material that generally is used to form dielectric protection layer made.
What deserves to be mentioned is that anti-She Installed in the present embodiment puts 31 manufacturing process; it is the surface that earlier this metallic reflector 32 is formed at this photic zone 33; immediately again to electroplate; perhaps physics such as sputter, evaporation or chemical method and form this protective seam 34 in these metallic reflector 32 surfaces avoid this metallic reflector 32 to produce oxidations.Treat anti-She Installed put 31 complete after, be placed in the surface of this load bearing seat 30 again, in order to reflect this semiconductor luminous assembly 50 bottom issued light lines.
In addition, see also Fig. 6 again, load bearing seat 30 end faces that fourth embodiment of the invention provided more offer a groove 35, put 31 and can be installed with and locate an anti-She Installed, and this anti-She Installed puts 31 manufacturing process such as leading portion and narrates.
At above-mentioned first to fourth embodiment, the present invention can be used for detecting most luminescence units 51 on the wafer of semiconductor luminous assembly 50 and semiconductor luminous assembly, also a glued membrane 40 and at least one semiconductor luminous assembly 50 can be carried on position, the purpose and the predetermined effect of same attainable cost invention to should the anti-Installed of penetrating putting 31.
The present invention also can be provided with at least one reflecting assembly around this semiconductor luminous assembly 50, use this semiconductor luminous assembly 50 of reflection to around emission light and towards this optical detection apparatus 20, and then improve the collected light quantity of this optical detection apparatus 20.
The present invention also provides a kind of optical detecting method of application of aforementioned optical detection apparatus 10, and its step comprises:
A) will be at least the semiconductor luminescence component 50 anti-Installed of penetrating that is positioned over load bearing seat 30 put on 31;
C) utilize this this semiconductor luminous assembly 50 of two probes, 21 electrical communication and start, at this moment, this semiconductor luminous assembly 50 will be lighted and be emitted beam at its top and bottom simultaneously, the anti-She Installed that is positioned at these semiconductor luminous assembly 50 bottoms puts 31 light that will receive from these semiconductor luminous assembly 50 bottoms, and reflected and make the integrating sphere 22 of its direct of travel towards this optical detection apparatus 20, carry out optical parameter with the detector 23 of this optical detection apparatus 20 for collected light again and measure.
To sum up institute is old, the present invention puts by the anti-She Installed that a high reflective qualities is set on load bearing seat, so the light reflection that can effectively the semiconductor luminous assembly bottom be sent upwards, make optical detection apparatus can collect light from semiconductor luminous assembly bottom, and then improve the accuracy that every optical parameter measures, and do not need to change original checkout equipment, and only need do small size improvement, conversion cost is cheap.
Claims (30)
1. an optical detection apparatus in order to measure the optical parameter of semiconductor luminous assembly, includes a load bearing seat, in order to carry at least one semiconductor luminous assembly; And an optical detection apparatus, wherein, this optical detection apparatus is characterised in that:
This load bearing seat to should semiconductor luminous assembly the end face of bottom be provided with an anti-Installed of penetrating and put.
2. optical detection apparatus according to claim 1, wherein, this anti-She Installed is changed to a distributed Bragg reflection horizon.
3. optical detection apparatus as claimed in claim 1, wherein, this anti-She Installed is changed to a barium sulphate reflection horizon.
4. optical detection apparatus as claimed in claim 1, wherein, this anti-She Installed is changed to a metallic reflector.
5. optical detection apparatus as claimed in claim 4, wherein, one of them makes this metallic reflector by aluminium, silver, chromium, gold or rhodium.
6. optical detection apparatus as claimed in claim 4, wherein, this anti-She Installed puts to have a photic zone and is positioned at the side of this metallic reflector away from this load bearing seat.
7. optical detection apparatus as claimed in claim 6, wherein, this photic zone is that one of them is made by glass, quartz, polyethylene terephthalate, Polyvinylchloride or vinyl-vinyl acetate copolymer.
8. as claim 4 or 5 described optical detection apparatus, wherein, this metallic reflector is formed with plating or physical gas-phase deposite method.
9. as claim 4 or 5 described optical detection apparatus, wherein, this metallic reflector is formed with the chemical vapor deposition method.
10. as claim 4 or 6 described optical detection apparatus, wherein, this anti-Installed of penetrating puts has a protective seam between this metallic reflector and this load bearing seat.
11. optical detection apparatus as claimed in claim 10, wherein, this protective seam is that one of them is made by titanium, gold, platinum, tungsten silicon dioxide or silicon nitride.
12. optical detection apparatus as claimed in claim 11, wherein, this protective seam is formed with plating or physical gas-phase deposite method.
13. optical detection apparatus as claimed in claim 11, wherein, this protective seam is formed with the chemical vapor deposition method.
14. optical detection apparatus as claimed in claim 1, wherein, this semiconductor luminous assembly is to attach to a glued membrane and be placed on this load bearing seat, and the penetrability of this glued membrane is more than 40%.
15. optical detection apparatus as claimed in claim 14, wherein, the penetrability of this glued membrane is more than 80%.
16. optical detection apparatus as claimed in claim 1 wherein, is provided with at least one reflecting assembly around this semiconductor luminous assembly.
17. an optical detecting method, in order to measure the optical parameter of semiconductor luminous assembly, its step comprises:
At least semiconductor luminescence component is positioned over the end face of a load bearing seat, and the end face of this load bearing seat is provided with an anti-Installed of penetrating and puts;
One optical detection apparatus is aimed at this semiconductor luminous assembly;
Start this semiconductor luminous assembly that this optical detection apparatus is aimed at, this anti-Installed of penetrating puts the bottom light of reflection or this semiconductor luminous assembly of scattering is made its this optical detection apparatus of part directive, carries out optical parameter with this optical detection apparatus more afterwards and measures.
18. optical detecting method as claimed in claim 17, wherein, this anti-She Installed is changed to a distributed Bragg reflection horizon.
19. optical detecting method as claimed in claim 17, wherein, this anti-She Installed is changed to a barium sulphate reflection horizon.
20. optical detecting method as claimed in claim 17, wherein, this anti-She Installed is changed to a metallic reflector.
21. optical detecting method as claimed in claim 20, wherein, this metallic reflector is that one of them is made by aluminium, silver, chromium, gold or rhodium.
22. optical detecting method as claimed in claim 20, wherein, this anti-She Installed puts to have a photic zone and is positioned at the side of this metallic reflector away from this load bearing seat.
23. optical detecting method as claimed in claim 22, wherein, this photic zone is that one of them is made by glass, quartz, polyethylene terephthalate, Polyvinylchloride or vinyl-vinyl acetate copolymer.
24. as claim 20 or 22 described optical detecting methods, wherein, this anti-Installed of penetrating puts has a protective seam between this metallic reflector and this load bearing seat.
25. optical detecting method as claimed in claim 24, wherein, this protective seam is that one of them is made by titanium, gold, platinum, tungsten, silicon dioxide or silicon nitride.
26. optical detecting method as claimed in claim 17, wherein, this optical detection apparatus includes an integrating sphere and a detector, in order to collect and to measure the collected light of this light integrating sphere.
27. optical detecting method as claimed in claim 17, wherein, this this optical detection apparatus includes two probes, and what make in order to start this semiconductor luminous assembly is luminous.
28. optical detecting method as claimed in claim 17, wherein, this semiconductor luminous assembly attaches to a glued membrane and is placed on this load bearing seat, and the penetrability of this glued membrane is more than 40%.
29. optical detecting method as claimed in claim 28, wherein, the penetrability of this glued membrane is more than 80%.
30. optical detecting method as claimed in claim 17 wherein, is provided with at least one reflecting assembly around this semiconductor luminous assembly.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009102264291A CN102072811A (en) | 2009-11-20 | 2009-11-20 | Optical detection device and detection method by applying same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009102264291A CN102072811A (en) | 2009-11-20 | 2009-11-20 | Optical detection device and detection method by applying same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102072811A true CN102072811A (en) | 2011-05-25 |
Family
ID=44031442
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009102264291A Pending CN102072811A (en) | 2009-11-20 | 2009-11-20 | Optical detection device and detection method by applying same |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102072811A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103900791A (en) * | 2012-12-24 | 2014-07-02 | 新世纪光电股份有限公司 | Led detecting device |
| CN104102008A (en) * | 2013-04-02 | 2014-10-15 | 豪勉科技股份有限公司 | Light receiving device capable of increasing light receiving quantity and angle |
| CN104458209A (en) * | 2013-09-24 | 2015-03-25 | 惠特科技股份有限公司 | Measurement device and measurement method |
| CN112924024A (en) * | 2021-03-12 | 2021-06-08 | 中国工程物理研究院激光聚变研究中心 | Novel high-energy laser beam quality measuring device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6734959B2 (en) * | 2001-07-12 | 2004-05-11 | Labsphere, Inc. | Prober for testing light-emitting devices on a wafer |
| CN101136399A (en) * | 2006-08-29 | 2008-03-05 | 东芝照明技术株式会社 | Illumination apparatus |
| CN101581770A (en) * | 2009-06-30 | 2009-11-18 | 上海半导体照明工程技术研究中心 | Method for testing lumen efficiency of LED lamps |
-
2009
- 2009-11-20 CN CN2009102264291A patent/CN102072811A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6734959B2 (en) * | 2001-07-12 | 2004-05-11 | Labsphere, Inc. | Prober for testing light-emitting devices on a wafer |
| CN101136399A (en) * | 2006-08-29 | 2008-03-05 | 东芝照明技术株式会社 | Illumination apparatus |
| CN101581770A (en) * | 2009-06-30 | 2009-11-18 | 上海半导体照明工程技术研究中心 | Method for testing lumen efficiency of LED lamps |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103900791A (en) * | 2012-12-24 | 2014-07-02 | 新世纪光电股份有限公司 | Led detecting device |
| CN104102008A (en) * | 2013-04-02 | 2014-10-15 | 豪勉科技股份有限公司 | Light receiving device capable of increasing light receiving quantity and angle |
| CN104458209A (en) * | 2013-09-24 | 2015-03-25 | 惠特科技股份有限公司 | Measurement device and measurement method |
| CN112924024A (en) * | 2021-03-12 | 2021-06-08 | 中国工程物理研究院激光聚变研究中心 | Novel high-energy laser beam quality measuring device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105940282B (en) | Film thickness measuring method and film thickness measurement device | |
| CN103415757B (en) | For the one-sided infrared sensor of the thickness or weight of measuring the product comprising reflection horizon | |
| JPH0658370B2 (en) | Analytical method and device | |
| CN103620384B (en) | Diffusing measurement window for near and mid ir multichannel sensor | |
| US20080235966A1 (en) | Inclination sensor | |
| WO2018223918A1 (en) | Detector and emission imaging device having same | |
| CN102072811A (en) | Optical detection device and detection method by applying same | |
| KR101954300B1 (en) | Measuring Method and Measuring Apparatus for Determining Transmission and/or Reflection Properties | |
| CN102403247A (en) | Sample Inspection Device And Sample Inspection Method | |
| US20200033244A1 (en) | Optical detector of particles | |
| CN104075879A (en) | Light emitting diode measurement device | |
| EP1360473B1 (en) | A luminescence based sensor | |
| KR20180083847A (en) | The light- | |
| KR101229904B1 (en) | Apparatus for measuring optical parameters of light-emitting element and measuring method using the same | |
| CN103370802A (en) | Light-receiving module for semiconductor light-emitting element and inspection device for semiconductor light-emitting element | |
| US20150204865A1 (en) | Sensing method | |
| EP1425570B1 (en) | A luminescence-based sensor assembly | |
| US20170052182A1 (en) | Optoelectronic cartridge for cancer biomarker detection utilizing silicon nanowire arrays | |
| JP3778362B2 (en) | LED light emission measuring device | |
| KR102492176B1 (en) | optical particle detector | |
| US9274060B1 (en) | Methods for transmembrane measurement of oxygen concentration and monitoring changes in oxygen concentration within a space enclosed by a membrane employing a photoluminescent transmembrane oxygen probe | |
| JP2014134497A (en) | Apparatus and method for measuring optical characteristic of led chip | |
| CN105974108A (en) | Immunochromatography detection system and detection method | |
| GB2531724A (en) | SPR sensor | |
| KR20160049760A (en) | fNIR Photo-Detector and the Fabrication Method Thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C12 | Rejection of a patent application after its publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20110525 |