TWI569469B - 用於覆晶發光二極體之ｐ－ｎ分離金屬填充 - Google Patents

用於覆晶發光二極體之ｐ－ｎ分離金屬填充 Download PDF

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Publication number
TWI569469B
TWI569469B TW101118425A TW101118425A TWI569469B TW I569469 B TWI569469 B TW I569469B TW 101118425 A TW101118425 A TW 101118425A TW 101118425 A TW101118425 A TW 101118425A TW I569469 B TWI569469 B TW I569469B
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TW
Taiwan
Prior art keywords
electrode
layer
metal layer
stud bumps
conductive layer
Prior art date
Application number
TW101118425A
Other languages
English (en)
Chinese (zh)
Other versions
TW201301564A (zh
Inventor
雷吉普
魏亞軍
亞歷山卓Ｈ 尼克
史帝法諾 史恰非諾
丹尼爾 亞歷山卓 史帝格沃
Original Assignee
皇家飛利浦電子股份有限公司
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Publication of TW201301564A publication Critical patent/TW201301564A/zh
Application granted granted Critical
Publication of TWI569469B publication Critical patent/TWI569469B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0364—Manufacture or treatment of packages of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/221—Structures or relative sizes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/221—Structures or relative sizes
    • H10W72/227—Multiple bumps having different sizes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/231—Shapes
    • H10W72/237—Multiple bump connectors having different shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/241—Dispositions, e.g. layouts
    • H10W72/242—Dispositions, e.g. layouts relative to the surface, e.g. recessed, protruding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251—Materials
    • H10W72/252—Materials comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/261—Functions other than electrical connecting
    • H10W72/263—Providing mechanical bonding or support, e.g. dummy bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/261—Functions other than electrical connecting
    • H10W72/267—Multiple bump connectors having different functions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL

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  • Led Device Packages (AREA)
  • Led Devices (AREA)
TW101118425A 2011-05-24 2012-05-23 用於覆晶發光二極體之ｐ－ｎ分離金屬填充 TWI569469B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US201161489280P 2011-05-24 2011-05-24

Publications (2)

Publication Number Publication Date
TW201301564A TW201301564A (zh) 2013-01-01
TWI569469B true TWI569469B (zh) 2017-02-01

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW101118425A TWI569469B (zh) 2011-05-24 2012-05-23 用於覆晶發光二極體之ｐ－ｎ分離金屬填充

Country Status (9)

Country Link
US (3) US9219209B2 (https=)
EP (1) EP2715813B1 (https=)
JP (1) JP5990574B2 (https=)
KR (1) KR101932996B1 (https=)
CN (1) CN103548162B (https=)
BR (1) BR112013029686A2 (https=)
RU (1) RU2597071C2 (https=)
TW (1) TWI569469B (https=)
WO (1) WO2012160455A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI847685B (zh) * 2023-05-10 2024-07-01 隆達電子股份有限公司 半導體結構及其形成方法

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8816383B2 (en) * 2012-07-06 2014-08-26 Invensas Corporation High performance light emitting diode with vias
DE102014102292A1 (de) * 2014-02-21 2015-08-27 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Bauelements
CN105591006A (zh) * 2014-10-20 2016-05-18 展晶科技(深圳)有限公司 覆晶式led封装体
US9896777B2 (en) 2015-10-30 2018-02-20 Essential Products, Inc. Methods of manufacturing structures having concealed components
US10158164B2 (en) 2015-10-30 2018-12-18 Essential Products, Inc. Handheld mobile device with hidden antenna formed of metal injection molded substrate
US10741486B2 (en) 2016-03-06 2020-08-11 Intel Corporation Electronic components having three-dimensional capacitors in a metallization stack
CN109496351B (zh) * 2017-06-09 2022-09-09 歌尔股份有限公司 微发光二极管阵列转移方法、制造方法以及显示装置
US11183616B2 (en) * 2018-09-26 2021-11-23 Lumileds Llc Phosphor converter structures for thin film packages and method of manufacture
CN112968094B (zh) * 2020-07-13 2022-03-01 重庆康佳光电技术研究院有限公司 一种倒装led芯片及其制备方法、显示面板
CN114284413B (zh) * 2021-12-30 2023-04-11 江苏第三代半导体研究院有限公司 半导体器件的电极制作方法及半导体器件
KR20240079696A (ko) * 2022-11-29 2024-06-05 엘지디스플레이 주식회사 표시 장치

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070246735A1 (en) * 2006-04-03 2007-10-25 Toyoda Gosei Co., Ltd. Semiconductor light emitting element
US20080083929A1 (en) * 2006-10-06 2008-04-10 Iii-N Technology, Inc. Ac/dc light emitting diodes with integrated protection mechanism
US20100078670A1 (en) * 2008-10-01 2010-04-01 Samsung Electronics Co., Ltd. Light emitting element with improved light extraction efficiency, light emitting device comprising the same, and fabricating method of the light emitting element and the light emitting device

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2720635B2 (ja) * 1991-06-27 1998-03-04 日本電気株式会社 半導体発光素子の製造方法
JP4457427B2 (ja) * 1999-03-18 2010-04-28 ソニー株式会社 半導体発光装置とその製造方法
US6486499B1 (en) * 1999-12-22 2002-11-26 Lumileds Lighting U.S., Llc III-nitride light-emitting device with increased light generating capability
US6885035B2 (en) * 1999-12-22 2005-04-26 Lumileds Lighting U.S., Llc Multi-chip semiconductor LED assembly
US6957899B2 (en) * 2002-10-24 2005-10-25 Hongxing Jiang Light emitting diodes for high AC voltage operation and general lighting
US20040211972A1 (en) 2003-04-22 2004-10-28 Gelcore, Llc Flip-chip light emitting diode
RU2231171C1 (ru) * 2003-04-30 2004-06-20 Закрытое акционерное общество "Инновационная фирма "ТЕТИС" Светоизлучающий диод
US7179670B2 (en) * 2004-03-05 2007-02-20 Gelcore, Llc Flip-chip light emitting diode device without sub-mount
US7285801B2 (en) * 2004-04-02 2007-10-23 Lumination, Llc LED with series-connected monolithically integrated mesas
WO2006035664A1 (ja) * 2004-09-27 2006-04-06 Matsushita Electric Industrial Co., Ltd. 半導体発光素子、その製造方法及びその実装方法、並びに発光装置
US7736945B2 (en) * 2005-06-09 2010-06-15 Philips Lumileds Lighting Company, Llc LED assembly having maximum metal support for laser lift-off of growth substrate
TWI294694B (en) * 2005-06-14 2008-03-11 Ind Tech Res Inst Led wafer-level chip scale packaging
KR100752719B1 (ko) * 2006-08-16 2007-08-29 삼성전기주식회사 플립칩용 질화물계 발광다이오드
EP2434554B1 (en) 2007-08-03 2018-05-30 Panasonic Intellectual Property Management Co., Ltd. Wavelength-converted light-emitting device with uniform emission
US9634191B2 (en) * 2007-11-14 2017-04-25 Cree, Inc. Wire bond free wafer level LED
US20090173956A1 (en) * 2007-12-14 2009-07-09 Philips Lumileds Lighting Company, Llc Contact for a semiconductor light emitting device
TW201010122A (en) * 2008-08-21 2010-03-01 Univ Nat Central Flip-chip light-emitting diode having the epitaxy strengthening layer, and fabrication method thereof
US7875984B2 (en) * 2009-03-04 2011-01-25 Koninklijke Philips Electronics N.V. Complaint bonding structures for semiconductor devices
JP2011071339A (ja) * 2009-09-25 2011-04-07 Toyoda Gosei Co Ltd 発光素子
KR101007137B1 (ko) * 2010-03-08 2011-01-10 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지
JP5356312B2 (ja) * 2010-05-24 2013-12-04 株式会社東芝 半導体発光装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070246735A1 (en) * 2006-04-03 2007-10-25 Toyoda Gosei Co., Ltd. Semiconductor light emitting element
US20080083929A1 (en) * 2006-10-06 2008-04-10 Iii-N Technology, Inc. Ac/dc light emitting diodes with integrated protection mechanism
US20100078670A1 (en) * 2008-10-01 2010-04-01 Samsung Electronics Co., Ltd. Light emitting element with improved light extraction efficiency, light emitting device comprising the same, and fabricating method of the light emitting element and the light emitting device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI847685B (zh) * 2023-05-10 2024-07-01 隆達電子股份有限公司 半導體結構及其形成方法

Also Published As

Publication number Publication date
KR20140030264A (ko) 2014-03-11
BR112013029686A2 (pt) 2017-01-17
KR101932996B1 (ko) 2018-12-27
US20140061714A1 (en) 2014-03-06
TW201301564A (zh) 2013-01-01
EP2715813B1 (en) 2019-07-24
EP2715813A1 (en) 2014-04-09
WO2012160455A1 (en) 2012-11-29
CN103548162A (zh) 2014-01-29
US9219209B2 (en) 2015-12-22
US10170675B2 (en) 2019-01-01
US9722161B2 (en) 2017-08-01
RU2597071C2 (ru) 2016-09-10
JP2014515557A (ja) 2014-06-30
RU2013156628A (ru) 2015-06-27
JP5990574B2 (ja) 2016-09-14
US20160126436A1 (en) 2016-05-05
CN103548162B (zh) 2016-11-09
US20170373235A1 (en) 2017-12-28

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