TWI569397B - 具有預先堆疊的微電子裝置之無凸塊增層式封裝體（二） - Google Patents

具有預先堆疊的微電子裝置之無凸塊增層式封裝體（二） Download PDF

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TWI569397B
TWI569397B TW105110566A TW105110566A TWI569397B TW I569397 B TWI569397 B TW I569397B TW 105110566 A TW105110566 A TW 105110566A TW 105110566 A TW105110566 A TW 105110566A TW I569397 B TWI569397 B TW I569397B
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microelectronic device
microelectronic
active surface
back surface
active
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TW105110566A
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TW201626534A (zh
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佩莫德 馬拉特卡
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英特爾公司
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Description

具有預先堆疊的微電子裝置之無凸塊增層式封裝體(二)
本發明係有關封裝體，更特別係有關具有預先堆疊的微電子裝置之無凸塊增層式封裝體。
發明背景
於本文中所描述的本發明之數個實施例大體上係有關微電子裝置封裝體設計之領域，並且更特別係有關在一個無凸塊增層式(BBUL)設計中之具有預先堆疊之微電子裝置的微電子裝置封裝體。
依據本發明之一實施例，係特地提出一種微電子封裝體，其包含：一第一微電子裝置，其具有帶有複數個主動接觸陸塊於其上的一個主動表面、一個相對背表面和至少一個側邊，其中該第一微電子裝置包括至少一個穿矽通孔，其從該第一微電子裝置背表面延伸入該第一微電子裝置但未通過該第一微電子裝置主動表面的該等複數個主動表面接觸陸塊，該至少一穿矽通孔係與該第一微電子裝置的該主動表面之積體電路電氣式聯通；一第二微電子裝置，其具有一個主動表面、一個相對背表面、和至少一個 側邊；至少一個互連件，其電氣式地連接該第二微電子裝置主動表面與鄰近該第一微電子裝置背表面的該至少一個第一微電子裝置穿矽通孔，其中該第一微電子裝置的該主動表面與該第二微電子裝置的該主動表面面對同一方向；一下填材料層，其設置於該第一微電子裝置與該第二微電子裝置之間，該下填材料與該第二微電子晶粒的該至少一側邊直接接觸；一封裝材料，其圍繞該第一微電子裝置以及該第二微電子裝置的至少一部份，該封裝材料接觸與圍繞該第二微電子的該側邊上之該下填材料層的至少一部份；以及一增層，其電氣式連接至該第一微電子裝置主動表面之該等複數個主動表面接觸陸塊。
102‧‧‧第一微電子裝置
104、124‧‧‧主動表面
105‧‧‧主動部份
106、126、156‧‧‧背表面
107‧‧‧基體部份
108、128‧‧‧側邊
112‧‧‧穿矽通孔
114‧‧‧主動表面接觸陸塊
116、132‧‧‧接觸陸塊
122‧‧‧第二微電子裝置
136‧‧‧互連
138‧‧‧下填材料
140‧‧‧堆疊結構
150‧‧‧載體
152‧‧‧封裝材料
154‧‧‧前表面
160‧‧‧基體
162‧‧‧通孔
164、176‧‧‧導通孔
170‧‧‧增層
172、178‧‧‧傳導軌跡
174‧‧‧介電層
180‧‧‧阻焊材料
182‧‧‧開口
184‧‧‧外部互連
190、192‧‧‧微電子封裝體
本發表內容之標的係於本說明書之結尾部份特別指出並清楚請求。從後文中之說明和後附申請專利範圍，並配合隨附圖式，可更充分顯明地看出本發表內容之前述的和其他特徵。應瞭解，隨附圖式僅描繪依據本發表內容的數個實施例，且因此不應被認為是在限制本發表內容之範圍。後文將經由利用隨附圖式來額外具體且詳細地描述本發表內容，以便使本發表內容之優點更容易被確立，於此等隨附圖式中：
第1~9圖例示一種用於形成一個微電子裝置封裝體之處理的側邊剖面圖，其中此微電子裝置封裝體具有在一種無凸塊增層式設計中之預先堆疊的微電子裝置。
第10圖例示另一個微電子裝置封裝體之實施例 的側邊剖面圖，其中此微電子裝置封裝體具有在一種無凸塊增層式設計中之預先堆疊的微電子裝置。
較佳實施例之詳細說明
於後文之詳細說明中，係參考藉由例示方式示出數個特定實施例的隨附圖式，其中，本案申請專利範圍中所請求之標的係可在此等實施例中實行。文中係以足以使熟於此技者實行所請求之標的的詳細程度來說明這些實施例。應瞭解，文中之多種實施例雖然互有不同，但並不必然是彼此排斥的。例如，於本文中配合一個實施例所說明的一個特定的特徵、結構或特性係可在其他實施例中實施，而不悖離所請求之標的之精神和範疇。此外，應瞭解，在所揭露的各個實施例中之個別元件的位置或配置係可在不悖離所請求之標的的精神和範疇的情況下被修改。因此，後文中之詳細說明不應被看作是限制形式，並且所請求之標的之範疇僅由被適當解讀的後附申請專利範圍以及後附申請專利範圍所賦現的全方位等效體來界定。於隨附圖式中，相似的標號在這幾個圖畫中係指相同或類似的元件或功能，並且於當中所描繪的元件並不必然係與彼此成比例繪製，相反地，個別元件可能是被放大或縮小，以求於本說明書之內文中所說明的元件能夠更容易被瞭解。
本詳細說明中之實施例係有關製造微電子封裝體的領域，其中，具有穿矽通孔(through-silicon via)的一第一微電子裝置可與一第二微電子裝置堆疊，並用於無 凸塊增層式封裝體中。
第1~8圖例示用於形成一個無凸塊增層式無核(BBUL-C)微電子封裝體之處理的一個實施例的剖面圖。如於第1圖中所示，可提供一第一微電子裝置102，其中此第一微電子裝置102包括有一個主動表面104、相對的實質上與第一微電子裝置主動表面104平行的一個背表面106、以及從第一微電子裝置主動表面104延伸至第一微電子裝置背表面106的至少一個側邊108。第一微電子裝置102可具有鄰近第一微電子裝置主動表面104的一個主動部份105以及從第一微電子裝置主動部份105延伸至第一微電子裝置背表面106的一個基體部份107。如熟於此技者所會瞭解的，第一微電子裝置主動部份105包含第一微電子裝置102的數個積體電路和互連(未示於圖中)。第一微電子裝置102可為任何適合的積體電路裝置，包括但不限制於一個微處理器(單或多核心)、一個記憶體裝置、一個晶片組、一個圖形裝置、一個特定應用積體電路，或其他諸如此類者。在一個實施例中，第一微電子裝置102為一個微處理器。
第一微電子裝置102可具有從第一微電子裝置背表面106延伸穿過第一微電子裝置基體部份107至第一微電子裝置主動部份105的至少一個導通孔。這樣的一個導通孔型態被稱為一個穿矽通孔112。第一微電子裝置穿矽通孔112可與第一微電子裝置主動部份105中之積體電路(未示於圖中)電氣式聯通。各個第一微電子裝置穿矽通孔112可係具有在第一微電子裝置背表面106上的一個接觸陸塊116。 雖然圖中係將第一微電子裝置背表面接觸陸塊示為直接與第一微電子裝置穿矽通孔112鄰接，應瞭解，其亦可係設置在第一微電子晶粒背表面上任何合適的位置而利用軌跡來形成其間之電氣式接觸。第一微電子裝置穿矽通孔112和第一微電子裝置背表面接觸陸塊116可係藉由於此技藝中已知的任何技術而被製造，包括但不限制於鑽鑿(雷射和離子)、微影術、電鍍和沈積，並且可係由任何合適的導電金屬製成，包括但不限制於銅、鋁、銀、金或其中之合金。
如於第2圖中所示，可將一第二微電子裝置122對準第一微電子裝置102。此第二微電子裝置122可具有實質上與第二微電子裝置主動表面124平行的一個一個背表面126、以及從第二微電子裝置主動表面124延伸至第二微電子裝置背表面126的至少一個側邊128。第二微電子裝置122可更進一步地包括有與微電子裝置主動表面124鄰接的至少一個接觸陸塊132，其中，第二微電子裝置接觸陸塊132可係連接至第二微電子裝置122內的積體電路(未示於圖中)。第二微電子裝置122可為任何適合的積體電路裝置，包括但不限制於一個微處理器(單或多核心)、一個記憶體裝置、一個晶片組、一個圖形裝置、一個特定應用積體電路，或其他諸如此類者。在一個實施例中，第二微電子裝置122為一個記憶體裝置。第二微電子裝置接觸陸塊132可為任何合適的導電金屬，包括但不限制於銅、鋁、銀、金或其中之合金。
如於第2圖中所更進一步示出的，第二微電子裝 置122可透過將第二微電子裝置接觸陸塊132連接至第一微電子裝置背表面接觸陸塊116的多個互連136(圖中係示為焊球)而附接至第一微電子裝置102，因而形成一個堆疊結構140。可在第一微電子裝置背表面106和第二微電子裝置主動表面124之間與此等多個互連136周圍佈置一種下填材料138，像是環氧材料等。下填材料138可增進堆疊結構140之結構完整性。
如於第3圖中所示，第二微電子裝置背表面126可如熟於此技者所習知地，藉由像是DBF(晶粒被測薄膜)或黏著劑(未示於圖中)，而被附接至一個載體150。可將一個封裝材料152佈置為相鄰於第二微電子裝置側邊128、第一微電子裝置側邊108處、和在包括有第一微電子裝置主動表面接觸陸塊114的第一微電子裝置主動表面104上，因而形成封裝材料152的一個前表面154，如於第4圖中所示出的。將第二微電子裝置背表面126設置在載體150上可造成封裝材料152的一個背表面156被形成為實質上與第二微電子裝置背表面126呈平面，因而形成基體160。
封裝材料152可係藉由於此技藝中所習知的任何處理程序，包括層壓處理程序，來佈置，如熟於此技者會能識出的，並且可為任何合適的介電材料，包括但不受限於填矽環氧(silica-filled epoxy)，像是可從台素股份有限公司(Ajinomoto Fine-Techno Co.,Inc.)，〒210-0801日本川崎市川崎區鈴木町1-2(1-2 Suzuki-cho,Kawasaki-ku,Kawasaki-shi,210-0801,Japan)購得者(Ajinomoto GX13、 Ajinomoto GX92及其他諸如此類者)。
可形成穿過封裝材料前表面154的數個通孔162，以將各個第一微電子裝置主動表面接觸陸塊114之至少一部份暴露出來，如於第5圖中所示的。第5圖之通孔162可係藉由於此技藝中所習知的任何技術，包括但不受限於雷射鑽鑿、離子鑽鑿和微影術，而形成，如熟於此技者會能識出的。可利用一種型樣化及電鍍處理程序來填充通孔162，以形成導通孔164，並同時形成第一層傳導軌跡172，如熟於此技者會能識出的，如於第6圖中所示。
如於第7圖中所示，可在封裝材料前表面154上形成一個增層170。增層170可包含多個介電層，其具有形成於各個介電層上的傳導軌跡，並以延伸穿過各個介電層的導通孔來連接不同層的傳導軌跡。請參考第7圖，增層170可包含第一層傳導軌跡172，並具有被形成為與第一層傳導軌跡172和封裝材料前表面154相鄰的一個介電層174。至少一個軌跡對軌跡導通孔176可延伸穿過介電層174，以將至少一個第一層傳導軌跡172連接至一個第二層傳導軌跡178。可在介電層174和第二層傳導軌跡178上以圖樣成形一種阻焊材料180，而使至少一個開口182暴露出至少一部分第二層傳導軌跡178。
如於第8圖中所示，可透過在阻焊材料180中以圖樣成形的開口182而在第二層傳導軌跡178上形成至少一個外部互連184。此等外部互連184可為一種焊接材料，並且可用來將增層170連接至外部部件(未示於圖中)。
應瞭解，雖然圖中僅示出一個介電層和兩個傳導軌跡層，然而，增層170可以是任何合適數量的介電層和傳導軌跡層。此(等)介電層，像是介電層174等，可係藉由於此技藝中所習知的任何技術形成，並且可為任何合適的介電材料。傳導軌跡層，像是第一層傳導軌跡172和第二層傳導軌跡178等，及導通孔176，可係藉由於此技藝中所習知的任何技術而製造，包括但不限制於電鍍和微影術，並且可係由任何合適的導電材料製成，包括但不限制於銅、鋁、銀、金或其中之合金。
可將載體150移除，而產生一個微電子封裝體190，如於第9圖中所示。第一微電子裝置102和第二微電子裝置122之堆疊和封裝致使微電子封裝體190有足夠的厚度來避免微電子封裝體190中之翹曲，如熟於此技者會可明白的，這可致使因焊球橋接和/或未接觸開口所致的產量損失減少。
於第10圖中示出微電子封裝體192的另一個實施例。於此實施例中，第一微電子裝置主動表面104可係透過在第一微電子裝置主動表面接觸陸塊114和第二微電子裝置接觸陸塊132之間延伸的互連136，而與第二微電子裝置主動表面124電氣式聯通。增層170可近鄰地形成於第一微電子裝置背表面上，並可與第一微電子裝置穿矽通孔112電氣式聯通。
亦可瞭解，本說明內容之主題並不必然係限制於例示於第1~10圖中之特定應用。本說明內容之主題係可應 用在其他堆疊裝置應用中。此外，亦可將本說明內容之主題使用在微電子裝置製造領域以外的任何合適的應用中。此外，本說明內容之主題可為一個大型無凸塊增建式封裝體的一部分，其可包括可係在晶圓層級形成的複數個經堆疊微電子晶粒，或任何數量的合適變化，如熟於此技者會可瞭解的。
本詳細說明已透過利用例圖、方塊圖、流程圖和/或範例，而論述此等裝置和/或處理程序的多種實施例。在前文中之此等例圖、方塊圖、流程圖和/或範例含有一或多個功能和/或操作的情況下，熟於此技者會可瞭解，在各個例圖、方塊圖、流程圖和/或範例內的各個功能和/或操作係可藉由種類繁多的硬體、軟體、韌體或實際上的當中之任何組合，而被獨立和/或集體實施。
上文中所論述之主題有時候闡述包含在或連接至其他不同部件的不同部件。應瞭解，此等闡述僅係示範性的，並且係有許多替代結構可被實施來達到相同功能。以概念上來講，用來達到相同功能的對於部件的任何配置方法係被有效「聯繫」，來達成所欲功能。因此，撇開結構或中間部件不談，結合本文中之任何兩個部件來達到特定功能均可被視為彼此「聯繫」來達到所欲功能。同樣的，如此聯繫的任何兩個部件可亦被視為被彼此「可操作性連接」或「可操作性耦接」以達到所欲功能，並且能夠被如此聯繫的任何兩個部件可被視為彼此「可操作性耦接」以達到所欲功能。可操作性耦接的詳細範例包括但不限制於 可實體配接和/或實體互動部件及/或可無線互動和/或無線互動部件及/或邏輯性互動和/或可邏輯性互動部件。
熟於此技者會可瞭解，於本文中所使用的詞語，特別是在後附申請專利範圍中的，一般係意欲作為「開放性」詞語。大體而言，「包括」或「包括有」等詞語分別應被解釋為「包括但不限制於」或「包括有但不限制於」。另外，「具有」一詞應被解釋成「至少具有」。
當對於情境及/或應用而言為適當時，於詳細說明中之複數及/或單數詞語的使用可被從複數至單數解譯和/或被從單數至複數解譯。
熟於此技者會可更進一步地瞭解，若有在請求項中對元件之數量作指示，則要對此請求項如此限制之意圖會很明白地記載於此請求項中，而在沒有此種記載的情況下，是沒有這樣的意圖的。另外，若有明白記載對於所呈現之請求項記述的一個特定數量，則熟於此技者會可識出，此種記載典型上應被解釋成意指「至少」所記載之數量。
於本說明書中對於「一實施例」、「一個實施例」、「一些實施例」、「另一個實施例」或「其他實施例」等詞語之使用可意指配合一或多個實施例所描述的一個特定的特徵、結構或特性可被包括在至少一些實施例中，但並不必然是在所有實施例中。於詳細說明中之對於「一實施例」、「一個實施例」、「另一個實施例」或「其他實施例」等詞語之使用並不必然全係指相同的實施例。
雖然已於本文中利用多種方法和系統來說明並 示出某些示範性技術，但熟於此技者應會瞭解，係可不悖離於本文中所請求之標的或其精神而做出多種其他變異體，並且可由等效體取代。此外，亦可在不悖離於本文中所述之中心概念的情況下，而對所請求之標的做出許多修改來適應特定情況。因此，係意欲使所請求之標的不受限於所揭露之特定範例，並欲使所請求之標的可亦包括所有落於後附申請專利範圍之範疇內的所有實作及其等效體。
102‧‧‧第一微電子裝置
104、124‧‧‧主動表面
105‧‧‧主動部份
106、126‧‧‧背面
107‧‧‧基體部份
108、128‧‧‧側邊
112‧‧‧穿矽通孔
114‧‧‧主動表面接觸陸塊
116、132‧‧‧接觸陸塊
122‧‧‧第二微電子裝置
136‧‧‧互連
138‧‧‧下填材料
140‧‧‧堆疊結構

Claims (14)

  1. 一種微電子封裝體，其包含：一第一微電子裝置，其具有帶有複數個主動接觸陸塊於其上的一個主動表面、一個相對背表面和至少一個側邊，其中該第一微電子裝置包括至少一個穿矽通孔，其從該第一微電子裝置背表面延伸入該第一微電子裝置但未通過該第一微電子裝置主動表面的該等複數個主動表面接觸陸塊，該至少一穿矽通孔係與該第一微電子裝置的該主動表面之積體電路電氣式聯通；一第二微電子裝置，其具有一個主動表面、一個相對背表面、和至少一個側邊；至少一個互連件，其電氣式地連接該第二微電子裝置主動表面與鄰近該第一微電子裝置背表面的該至少一個第一微電子裝置穿矽通孔，其中該第一微電子裝置的該主動表面與該第二微電子裝置的該主動表面面對同一方向；一下填材料層，其設置於該第一微電子裝置與該第二微電子裝置之間，該下填材料與該第二微電子晶粒的該至少一側邊直接接觸；一封裝材料，其圍繞該第一微電子裝置以及該第二微電子裝置的至少一部份，該封裝材料接觸與圍繞該第二微電子的該側邊上之該下填材料層的至少一部份；以及 一增層，其電氣式連接至該第一微電子裝置主動表面之該等複數個主動表面接觸陸塊。
  2. 如申請專利範圍第1項之微電子封裝體，其中，該封裝材料包括實質上與該第二微電子裝置背表面呈平面的一個背表面。
  3. 如申請專利範圍第1項之微電子封裝體，其中，該封裝材料包含填氧化矽環氧化物。
  4. 一種形成微電子封裝體的方法，其包含以下步驟：形成一第一微電子裝置，其具有帶有複數個主動接觸陸塊於其上的一個主動表面、一個相對背表面和至少一個側邊，其中該第一微電子裝置包括至少一個穿矽通孔，其從該第一微電子裝置背表面延伸入該第一微電子裝置但未通過該第一微電子裝置主動表面的該等複數個主動表面接觸陸塊，該至少一穿矽通孔係與該第一微電子裝置的該等主動表面之積體電路電氣式聯通；形成一第二微電子裝置，其具有一個主動表面、一個相對背表面、和至少一個側邊；電氣式地連接該第二微電子裝置主動表面及鄰近於該第一微電子裝置背表面之該至少一第一微電子裝置穿矽通孔，其中該第一微電子裝置的該主動表面與該第二微電子裝置的該主動表面面對同一方向；形成一下填材料層於該第一微電子裝置與該第二微電子裝置之間，該下填材料層與該第二微電子晶粒的該至少一側邊直接接觸； 設置一封裝材料圍繞該第一微電子裝置與該第二微電子裝置的至少一部份，該封裝材料接觸且環繞該第二微電子裝置的該側邊上之該下填材料層的至少一部份；以及形成一增層，其中形成該增層包括將該增層電氣式連接至該第一微電子裝置主動表面之該等複數個主動表面接觸陸塊。
  5. 如申請專利範圍第4項之方法，其中，設置該封裝材料包括形成實質上與該第二微電子裝置背表面呈平面的一背表面。
  6. 如申請專利範圍第4項之方法，其中，設置該封裝材料包括設置一填氧化矽環氧化物。
  7. 如申請專利範圍第4項之方法，其進一步包括於該封裝材料之設置之前將該第二微電子裝置放置於一載體上。
  8. 一種微電子封裝體，其包含：一第一微電子裝置，其具有帶有有複數個主動接觸陸塊於其上之一主動表面、一個相對背表面和至少一個側邊，其中該第一微電子裝置包括至少一個穿矽通孔，其從該第一微電子裝置背表面延伸入該第一微電子裝置但未通過該第一微電子裝置主動表面的該等複數個主動表面接觸陸塊，該至少一穿矽通孔係與該第一微電子裝置的該主動表面之積體電路電氣式聯通；一第二微電子裝置，其具有一個主動表面、一個相 對背表面、和至少一個側邊；至少一個互連件，其電氣式地連接該第一微電子裝置主動表面的該等複數個主動表面接觸陸塊與該第二微電子裝置主動表面，其中該第一微電子裝置的該主動表面與該第二微電子裝置的該主動表面彼此面對；一下填材料層，其設置於該第一微電子裝置與該第二微電子裝置之間，該下填材料與該第二微電子晶粒的該至少一側邊直接接觸；一封裝材料，其圍繞該第一微電子裝置以及該第二微電子裝置的至少一部份，該封裝材料接觸與圍繞該第二微電子晶粒的該側邊上之該下填材料層的至少一部份；以及一增層，其電氣式連接至鄰近該第一微電子裝置背表面的該至少一個第一微電子裝置穿矽通孔。
  9. 如申請專利範圍第8項之微電子封裝體，其中該封裝材料包括實質上與該第二微電子裝置背表面呈平面的一個背表面
  10. 如申請專利範圍第8項之微電子封裝體，其中該封裝材料包含填氧化矽環氧化物。
  11. 一種形成一微電子封裝體之方法，其包含以下步驟：形成一第一微電子裝置，其具有帶有複數個主動表面接觸陸塊的一個主動表面、一個相對背表面和至少一個側邊，其中該第一微電子裝置包括至少一個穿矽通孔，其從該第一微電子裝置背表面延伸入該第一微電子裝 置但未通過該第一微電子裝置主動表面的該等複數個主動表面接觸陸塊，該至少一穿矽通孔與該第一微電子裝置的該等主動表面之積體電路電氣式聯通；形成一第二微電子裝置，其具有一個主動表面、一個相對背表面、和至少一個側邊；電氣式地連接該第二微電子裝置主動表面與該該第一微電子裝置主動表面之該等複數個主動表面接觸陸塊，其中該第一微電子裝置的該主動表面與該第二微電子裝置的該主動表面彼此面對；形成配置於該第一微電子裝置與該第二微電子裝置之間之一下填材料層，該下填材料層與該第二微電子晶粒的該至少一側邊直接接觸；設置圍繞該第一微電子裝置與該第二微電子裝置的至少一部份之一封裝材料，該封裝材料接觸且環繞該第二微電子裝置的該側邊上之該下填材料層的至少一部份；以及形成一增層，其中形成該增層包括將該增層電氣式連接至鄰近該第一微電子裝置背表面的該至少一個第一微電子裝置穿矽通孔。
  12. 如申請專利範圍第11項之方法，其中，設置該封裝材料包括形成實質上與該第二微電子裝置背表面呈平面的一背表面。
  13. 如申請專利範圍第11項之方法，其中，設置該封裝材料包括設置一填氧化矽環氧化物。
  14. 如申請專利範圍第11項之方法，其進一步包括於設置該封裝材料之前將該第二微電子裝置放置於一載體上。
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