TWI568507B - 基板清洗裝置、基板清洗方法及非臨時性記憶媒體 - Google Patents
基板清洗裝置、基板清洗方法及非臨時性記憶媒體 Download PDFInfo
- Publication number
- TWI568507B TWI568507B TW103118328A TW103118328A TWI568507B TW I568507 B TWI568507 B TW I568507B TW 103118328 A TW103118328 A TW 103118328A TW 103118328 A TW103118328 A TW 103118328A TW I568507 B TWI568507 B TW I568507B
- Authority
- TW
- Taiwan
- Prior art keywords
- nozzle
- substrate
- cleaning liquid
- gas
- cleaning
- Prior art date
Links
- 238000004140 cleaning Methods 0.000 title claims description 466
- 239000000758 substrate Substances 0.000 title claims description 272
- 238000000034 method Methods 0.000 title claims description 76
- 239000007788 liquid Substances 0.000 claims description 437
- 230000002093 peripheral effect Effects 0.000 claims description 65
- 230000008569 process Effects 0.000 claims description 40
- 230000007246 mechanism Effects 0.000 claims description 17
- 229920002120 photoresistant polymer Polymers 0.000 claims description 11
- 238000012545 processing Methods 0.000 claims description 10
- 230000007423 decrease Effects 0.000 claims description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 9
- 238000005507 spraying Methods 0.000 claims description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 239
- 229910001873 dinitrogen Inorganic materials 0.000 description 185
- 239000007789 gas Substances 0.000 description 90
- 229910052757 nitrogen Inorganic materials 0.000 description 28
- 238000013459 approach Methods 0.000 description 14
- 230000000694 effects Effects 0.000 description 14
- 230000007547 defect Effects 0.000 description 13
- 230000008859 change Effects 0.000 description 8
- 239000000243 solution Substances 0.000 description 7
- 238000001035 drying Methods 0.000 description 6
- 238000011156 evaluation Methods 0.000 description 6
- 238000013467 fragmentation Methods 0.000 description 6
- 238000006062 fragmentation reaction Methods 0.000 description 6
- 230000004048 modification Effects 0.000 description 6
- 238000012986 modification Methods 0.000 description 6
- 230000009471 action Effects 0.000 description 4
- 238000011161 development Methods 0.000 description 4
- 230000018109 developmental process Effects 0.000 description 4
- 239000012530 fluid Substances 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 238000007664 blowing Methods 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 230000007723 transport mechanism Effects 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013112395 | 2013-05-28 | ||
JP2014014864A JP6007925B2 (ja) | 2013-05-28 | 2014-01-29 | 基板洗浄装置、基板洗浄方法及び記憶媒体 |
JP2014058221A JP6102807B2 (ja) | 2013-05-28 | 2014-03-20 | 基板洗浄装置、基板洗浄方法及び記憶媒体 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201519966A TW201519966A (zh) | 2015-06-01 |
TWI568507B true TWI568507B (zh) | 2017-02-01 |
Family
ID=52338346
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW103118328A TWI568507B (zh) | 2013-05-28 | 2014-05-26 | 基板清洗裝置、基板清洗方法及非臨時性記憶媒體 |
Country Status (3)
Country | Link |
---|---|
JP (2) | JP6007925B2 (enrdf_load_stackoverflow) |
KR (1) | KR102126591B1 (enrdf_load_stackoverflow) |
TW (1) | TWI568507B (enrdf_load_stackoverflow) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI622091B (zh) | 2015-06-18 | 2018-04-21 | 思可林集團股份有限公司 | 基板處理裝置 |
JP6613206B2 (ja) * | 2015-06-18 | 2019-11-27 | 株式会社Screenホールディングス | 基板処理装置 |
JP6960489B2 (ja) * | 2016-03-31 | 2021-11-05 | 株式会社Screenホールディングス | 基板処理方法 |
JP6807162B2 (ja) * | 2016-04-13 | 2021-01-06 | 東京エレクトロン株式会社 | 基板洗浄方法、基板洗浄装置及びコンピュータ読み取り可能な記録媒体 |
CN107470225A (zh) * | 2017-08-28 | 2017-12-15 | 广州沃安实业有限公司 | 一种清洗机 |
JP7034634B2 (ja) | 2017-08-31 | 2022-03-14 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
TWI643683B (zh) * | 2017-10-19 | 2018-12-11 | Scientech Corporation | 流體供應裝置 |
JP2019169624A (ja) * | 2018-03-23 | 2019-10-03 | 株式会社Screenホールディングス | 現像方法 |
JP7536583B2 (ja) * | 2020-04-28 | 2024-08-20 | 東京エレクトロン株式会社 | ノズルユニット、液処理装置及び液処理方法 |
JP7594903B2 (ja) * | 2020-12-23 | 2024-12-05 | 東京エレクトロン株式会社 | 現像装置及び現像方法 |
CN116092967B (zh) * | 2021-11-08 | 2025-08-29 | 长鑫存储技术有限公司 | 半导体清洗装置及方法 |
CN115069639B (zh) * | 2022-05-31 | 2023-11-14 | 江苏卓玉智能科技有限公司 | 半导体晶圆的清洗装置 |
CN114927441A (zh) * | 2022-05-31 | 2022-08-19 | 北京北方华创微电子装备有限公司 | 半导体清洗设备 |
CN119487617A (zh) | 2022-07-14 | 2025-02-18 | 东京毅力科创株式会社 | 基片处理装置、基片处理方法和基片处理程序 |
CN120311276A (zh) * | 2024-01-12 | 2025-07-15 | 盛美半导体设备(上海)股份有限公司 | 电镀装置及基板清洁方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2005050724A1 (ja) * | 2003-11-18 | 2005-06-02 | Tokyo Electron Limited | 基板洗浄方法、基板洗浄装置およびコンピュータ読み取り可能な記録媒体 |
US20080053487A1 (en) * | 2006-08-29 | 2008-03-06 | Tomohiro Goto | Substrate processing method and substrate processing apparatus |
TW201249554A (en) * | 2008-04-03 | 2012-12-16 | Tokyo Electron Ltd | Substrate cleaning method, substrate cleaning apparatus, and storage medium |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4040074B2 (ja) * | 2004-04-23 | 2008-01-30 | 東京エレクトロン株式会社 | 基板洗浄方法、基板洗浄装置、コンピュータプログラムおよびプログラム記憶媒体 |
KR100846690B1 (ko) | 2004-06-04 | 2008-07-16 | 도쿄엘렉트론가부시키가이샤 | 기판 세정 방법 및 컴퓨터로 판독 가능한 기억 매체 |
JP4324527B2 (ja) * | 2004-09-09 | 2009-09-02 | 東京エレクトロン株式会社 | 基板洗浄方法及び現像装置 |
KR101433868B1 (ko) * | 2006-10-02 | 2014-08-29 | 램 리서치 아게 | 디스크와 같은 물체의 표면에서 액체를 제거하기 위한 장치 및 방법 |
JP5090089B2 (ja) | 2006-10-19 | 2012-12-05 | 大日本スクリーン製造株式会社 | 基板処理装置 |
JP4780808B2 (ja) | 2009-02-03 | 2011-09-28 | 東京エレクトロン株式会社 | 現像処理方法及び現像処理装置 |
JP5538102B2 (ja) * | 2010-07-07 | 2014-07-02 | 株式会社Sokudo | 基板洗浄方法および基板洗浄装置 |
-
2014
- 2014-01-29 JP JP2014014864A patent/JP6007925B2/ja active Active
- 2014-03-20 JP JP2014058221A patent/JP6102807B2/ja active Active
- 2014-05-23 KR KR1020140062387A patent/KR102126591B1/ko active Active
- 2014-05-26 TW TW103118328A patent/TWI568507B/zh active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2005050724A1 (ja) * | 2003-11-18 | 2005-06-02 | Tokyo Electron Limited | 基板洗浄方法、基板洗浄装置およびコンピュータ読み取り可能な記録媒体 |
US20080053487A1 (en) * | 2006-08-29 | 2008-03-06 | Tomohiro Goto | Substrate processing method and substrate processing apparatus |
TW201249554A (en) * | 2008-04-03 | 2012-12-16 | Tokyo Electron Ltd | Substrate cleaning method, substrate cleaning apparatus, and storage medium |
Also Published As
Publication number | Publication date |
---|---|
JP6102807B2 (ja) | 2017-03-29 |
KR20140139969A (ko) | 2014-12-08 |
TW201519966A (zh) | 2015-06-01 |
JP2015008267A (ja) | 2015-01-15 |
KR102126591B1 (ko) | 2020-06-24 |
JP6007925B2 (ja) | 2016-10-19 |
JP2015008273A (ja) | 2015-01-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI568507B (zh) | 基板清洗裝置、基板清洗方法及非臨時性記憶媒體 | |
US9805958B2 (en) | Substrate cleaning apparatus, substrate cleaning method and non-transitory storage medium | |
JP6314779B2 (ja) | 液処理方法、記憶媒体及び液処理装置 | |
US9378988B2 (en) | Substrate processing apparatus and substrate processing method using processing solution | |
TWI666068B (zh) | 基板之洗淨裝置及基板之洗淨方法 | |
CN101551602B (zh) | 基板洗净方法和基板洗净装置 | |
KR102482211B1 (ko) | 기판 처리 장치, 기판 처리 방법 및 기억 매체 | |
TWI797159B (zh) | 基板處理方法、基板處理裝置及記錄媒體 | |
JPWO2005050724A1 (ja) | 基板洗浄方法、基板洗浄装置およびコンピュータ読み取り可能な記録媒体 | |
JPH1154394A (ja) | 液膜形成装置及びその方法 | |
KR102424125B1 (ko) | 현상 방법 | |
JP6508721B2 (ja) | 基板処理方法および基板処理装置 | |
KR20150021893A (ko) | 기판 세정 장치, 기판 세정 방법, 및 컴퓨터 판독 가능한 기록 매체 | |
US9625821B2 (en) | Developing apparatus | |
JP4730787B2 (ja) | 基板処理方法および基板処理装置 | |
KR101950047B1 (ko) | 기판 세정 건조 방법 및 기판 현상 방법 | |
JP2000311846A (ja) | レジスト現像方法およびレジスト現像装置 | |
JP2012173510A (ja) | 有機現像処理方法及び有機現像処理装置 | |
JP6814847B2 (ja) | 現像方法 | |
US12347698B2 (en) | Liquid processing apparatus and liquid processing method |