TWI568507B - Substrate cleaning apparatus, substrate cleaning method and non-transitory storage medium - Google Patents

Description

Substrate cleaning device, substrate cleaning method and non-transitory memory medium

The present invention relates to a technique for rotating a substrate while cleaning the surface of the substrate with a cleaning liquid. This application is based on Japanese Patent Application No. 2013-112395, which was filed in Japan on May 28, 2013, Japanese Patent Application No. 2014-014864, which was filed on January 29, 2014 in Japan, and Japan, March 20, 2014. Japanese Patent Application No. 2014-058221 claims priority and uses its contents for this purpose.

As an exposure process for forming a photoresist pattern on a substrate such as a semiconductor wafer, a liquid immersion exposure in which a liquid is present on the surface of the substrate and exposed is known. In order to suppress the photoresist from being wound back to the peripheral end or the back surface of the substrate, the photoresist used for liquid immersion exposure is preferably one having high water repellency. In the development processing of the substrate after exposure, the developer is supplied to the substrate to dissolve the exposed portion, for example, and then the substrate is rotated, and a cleaning liquid such as pure water is supplied to the substrate, and the dissolved product is washed away from the surface of the substrate. Specifically, it is known that a cleaning liquid is ejected from a cleaning liquid nozzle, and the cleaning liquid nozzle is scanned from a central portion of the substrate toward a peripheral portion of the substrate.

However, since the base film forming the photoresist has low water repellency (small contact angle), the difference in contact angle between the exposed portion and the unexposed portion is large in the substrate after exposure using a photoresist having a high water repellency (large contact angle). Therefore, when the cleaning liquid is supplied after supplying the developing solution, a phenomenon called "liquid fragmentation" occurs, and droplets are liable to remain on the surface of the substrate. This droplet is dried and becomes a residue, which is a factor for lowering the yield of the semiconductor element.

As the base film, the antireflection film composed of organic materials is the mainstream, but recently, an antireflection film composed of an inorganic material having a smaller contact angle has been explored, and the difference in contact angle between the exposed portion and the unexposed portion is larger. The residue is more likely to occur.

When the substrate having a large difference in contact angle between the exposed portion and the unexposed portion is subjected to the above-described cleaning, the scanning speed of the cleaning liquid nozzle is delayed, which is a significant factor, but it may become a factor for lowering the processing capability of the device. In particular, in a coating and developing apparatus, the market demands to process more than 200 sheets per hour, and the industry is expected to have a method of maintaining high processing capacity while reducing residue.

As a cleaning method for solving this problem, Japanese Patent No. 4040074 discloses a technique in which a cleaning liquid is ejected onto a substrate, and then a nitrogen gas is ejected to a central portion of the substrate to form a dry region core. Thereafter, the ejection position of the cleaning liquid moves toward the outside of the substrate, and the gas ejection position also moves, and the drying area expands toward the outer side, and a technique is described. When the gas ejection position moves, the movement speed of the gas nozzle is on the substrate. The area on the peripheral side becomes faster. Japanese Patent Publication No. 2004-14972 (paragraph 0044) discloses a technique in which the flow rate of the gas contained in the mixture of the liquid and the gas which is ejected toward the substrate is changed as it approaches the peripheral edge portion of the substrate. Japanese Patent No. 4350989 (Fig. 5, paragraphs 0050, 0053, 0057) describes a technique in which the gas injection angle increases as the gas is approached, and the gas pressure is weakened and uniformly dried. Further, Japanese Patent No. 5151629 (Figs. 4 to 6) discloses a technique in which a gas is ejected from a nozzle toward a region of a substrate, and then a gas is ejected from the other nozzle toward the same region. We predict that the industry will demand more precision in cleaning in the future. In order to reduce the residue, the industry will require further improvements.

In view of such circumstances, an object of the present invention is to provide a substrate cleaning apparatus, a substrate cleaning method, and a non-transitory memory medium for rotating a substrate while cleaning the surface of the substrate with a cleaning liquid, thereby suppressing the residual of the droplets after the cleaning process and reducing Residue.

The present invention relates to a substrate cleaning apparatus for rotating a substrate while cleaning the substrate using a cleaning liquid and a gas, comprising: a substrate holding portion for horizontally holding the substrate; and a rotating mechanism for rotating the substrate holding portion around the vertical axis; a cleaning liquid nozzle and a second cleaning liquid nozzle for respectively supplying a cleaning liquid to a substrate held by the substrate holding portion; a gas nozzle for injecting gas to the substrate held by the substrate holding portion; and a nozzle moving portion for making a nozzle moving portion The first cleaning liquid nozzle, the second cleaning liquid nozzle, and the gas nozzle move; and the control unit outputs a control signal, and performs the following steps: ejecting the cleaning liquid from the first cleaning liquid nozzle to the center portion of the substrate; After the ejection position of the cleaning liquid moves from the central portion of the substrate toward the peripheral edge side, the gas is ejected from the central portion of the substrate; and then the cleaning liquid and the gas are ejected from the first cleaning liquid nozzle and the gas nozzle, respectively. (1) the cleaning liquid nozzle and the respective ejection positions of the gas nozzle move toward the peripheral edge side of the substrate; and secondly, the cleaning is switched from the first cleaning liquid nozzle And ejecting the second cleaning liquid nozzle, ejecting the cleaning liquid from the second cleaning liquid nozzle, and ejecting the gas from the gas nozzle, and moving the respective ejection positions of the second cleaning liquid nozzle and the gas nozzle toward the peripheral edge side of the substrate; In the second cleaning liquid nozzle, the position of the ejection position from the ejection position of the first cleaning liquid nozzle is set, and the distance from the ejection position of the second cleaning liquid nozzle to the center of the substrate is d2, the self-gas nozzle When the distance from the ejection position to the center of the substrate is d3, d3 < d2 when the cleaning liquid is ejected from the second cleaning liquid nozzle, and the difference between d2 and d3 gradually increases as the second cleaning liquid nozzle moves toward the peripheral side of the substrate. Reduced.

According to another aspect of the present invention, a substrate cleaning apparatus for rotating a substrate while cleaning the substrate using a cleaning liquid and a gas includes: a substrate holding portion that horizontally holds the substrate; and a rotating mechanism that surrounds the substrate holding portion The first nozzle moving portion holds the cleaning liquid nozzle for supplying the cleaning liquid to the substrate held by the substrate holding portion and the gas nozzle for spraying the gas; the second nozzle moving portion is to be The gas nozzle of the substrate ejecting gas held by the substrate holding portion is held by the first nozzle moving portion, and the control unit outputs a control signal to perform the following steps: ejecting the center portion of the substrate from the cleaning liquid nozzle Next, the first nozzle moving portion is moved, and the gas nozzle from the first nozzle moving portion ejects gas to the center portion; and then, the ejection position of the cleaning liquid nozzle is higher than that of the first nozzle moving portion. The position is further located on the peripheral side of the substrate, and the cleaning liquid is ejected and the gas is ejected from the gas nozzle, and the first nozzle moving portion is moved toward the first nozzle The peripheral side of the plate moves, and secondly, the gas is ejected from the gas nozzle of the second nozzle moving portion, and the cleaning liquid is ejected from the cleaning liquid nozzle, and the first nozzle moving portion and the second nozzle moving portion are moved toward the peripheral side of the substrate. And controlling the moving speed of the moving portions of the two nozzles, if the distance from the ejection position of the cleaning liquid nozzle to the center of the substrate is L1, the distance from the ejection position of the gas nozzle of the second nozzle moving portion to the center of the substrate is In L2, when gas is ejected from the gas nozzle of the second nozzle moving portion, L2 < L1, and as the first nozzle moving portion and the second nozzle moving portion move toward the peripheral edge side of the substrate, the difference between L1 and L2 is gradually decreased. .

According to still another aspect, the present invention is a substrate cleaning method for rotating a substrate while cleaning the substrate using a cleaning liquid and a gas, and the method comprises the steps of: holding the substrate horizontally on the substrate holding portion; and causing the substrate holding portion to be vertically When the shaft rotates, the cleaning liquid is ejected from the center portion of the substrate from the first cleaning liquid nozzle; then, the ejection position of the cleaning liquid is moved toward the peripheral side of the substrate, and then the gas is ejected from the gas nozzle toward the center portion of the substrate; The cleaning liquid and the gas are ejected from the first cleaning liquid nozzle and the gas nozzle, and the respective ejection positions of the first cleaning liquid nozzle and the gas nozzle are moved toward the peripheral edge side of the substrate; and the ejection of the cleaning liquid is discharged from the first The cleaning liquid nozzle is switched to the second cleaning liquid nozzle, and the cleaning liquid is ejected from the second cleaning liquid nozzle to eject the gas from the gas nozzle, and the respective ejection positions of the second cleaning liquid nozzle and the gas nozzle are moved toward the peripheral edge side of the substrate; In the second cleaning liquid nozzle, the ejection position is set at a position shifted from the ejection position of the ejection position of the first cleaning liquid nozzle, and (2) The distance from the ejection position of the cleaning liquid nozzle to the center of the substrate is d2, and the distance from the ejection position of the gas nozzle to the center of the substrate is d3, and d3 < d2 when the cleaning liquid is ejected from the second cleaning liquid nozzle, and As the second cleaning liquid nozzle moves toward the peripheral side of the substrate, the difference between d2 and d3 gradually decreases.

According to still another aspect, the present invention provides a substrate cleaning method for rotating a substrate and cleaning the substrate using a cleaning liquid and a gas, wherein the first nozzle moving portion is used to supply a cleaning liquid nozzle for supplying a cleaning liquid to the substrate. And a gas nozzle for spraying the gas to be held; and the second nozzle moving portion holds the gas nozzle for spraying the substrate gas, and is disposed outside the first nozzle moving portion; and includes the following procedure: holding the substrate horizontally on the substrate holding a step of rotating the substrate holding portion around the vertical axis, and ejecting the cleaning liquid from the cleaning liquid nozzle to the center portion of the substrate; and then moving the first nozzle moving portion, the gas nozzle from the first nozzle moving portion The center portion ejects the gas. Then, the ejection position of the cleaning liquid nozzle is located on the peripheral side of the substrate from the ejection position of the gas nozzle of the first nozzle moving portion, and the cleaning liquid is ejected and the gas is ejected from the gas nozzle, and the first gas is discharged. The nozzle moving portion moves toward the peripheral edge side of the substrate; and secondly, the gas nozzle from the second nozzle moving portion ejects gas and ejects from the cleaning liquid The nozzle sprays the cleaning liquid while moving the first nozzle moving portion and the second nozzle moving portion toward the peripheral edge side of the substrate, and controls the moving speed of the two nozzle moving portions, from the ejection position of the cleaning liquid nozzle to the center portion of the substrate. When the distance is L1, the distance from the ejection position of the gas nozzle of the second nozzle moving portion to the center portion of the substrate is L2, and when gas is ejected from the gas nozzle of the second nozzle moving portion, L2 < L1, and with the first The nozzle moving portion and the second nozzle moving portion move toward the peripheral edge side of the substrate, and the difference between L1 and L2 gradually decreases.

According to still another aspect, the present invention is a non-transitory memory medium storing a program for operating on a computer of a substrate cleaning apparatus, and the substrate cleaning method is implemented by the substrate cleaning apparatus.

In the present invention, the cleaning liquid nozzle and the gas nozzle are used to rotate the substrate, and the cleaning liquid and the gas are sprayed to the center of the substrate in sequence, and the nozzles of the nozzles are moved toward the peripheral side of the substrate, and the ejection of the cleaning liquid is switched to the setting. The second cleaning liquid nozzle that is off the position of the movement path of the first cleaning liquid nozzle ejects the cleaning liquid and ejects the gas, and simultaneously moves the two nozzles toward the peripheral side of the substrate, moves the nozzles, and ejects from the second cleaning liquid nozzle. The distance from the position to the center of the substrate gradually decreases from the distance from the ejection position of the gas nozzle to the central portion of the substrate. Therefore, in the region on the peripheral side of the substrate, the gas ejection position gradually approaches the liquid interface. Therefore, in the region close to the peripheral edge of the substrate, the force at the interface of the gas pressing liquid is gradually increased, the cleaning effect can be improved, and the liquid residue or the liquid fragmentation of the cleaning liquid can be suppressed, and the cleaning can be performed satisfactorily.

According to another aspect of the invention, the substrate is rotated, and the cleaning liquid and the drying gas are sequentially sprayed on the center portion of the substrate, and the cleaning liquid nozzle is sprayed from the cleaning liquid nozzle of the nozzle moving portion. The gas nozzle of the other nozzle moving portion ejects gas. Further, when each nozzle moving portion moves toward the peripheral edge side of the substrate, the moving speed is different, and the gas ejection position gradually approaches the liquid interface. Therefore, the region closer to the periphery of the substrate, the force of pushing the liquid interface with the gas is gradually enhanced, and the same effect is obtained.

An embodiment in which the substrate cleaning apparatus of the present invention is applied to a developing device will be described with reference to Figs. 1 to 4 . In the developing device (substrate cleaning device), two cup body modules 1 are arranged in a line in the frame 9 of the angle type. The cup body module 1 includes: a rotating chuck 11 for holding a substrate holding portion of the wafer W; and a cup body 10 for collecting cleaning liquid or dissolved matter scattered from the wafer W. The spin chuck 11 is connected to the rotating mechanism 13 and an elevating mechanism (not shown) via the rotating shaft 12, so that the state of the wafer W can be rotated and raised and lowered. Further, in the present embodiment, the wafer W is rotated clockwise as viewed from above.

A circular plate 14 and a ring member 15 are provided below the rotary chuck 11. Further, a cup body 10 having an open upper side is provided, and the crucible surrounds the wafer W on the spin chuck 11. The cup body 10 is composed of a cylindrical outer cup 16 and an inner cup body 17. The outer cup 16 is provided with a lifting mechanism 18, which can be arbitrarily raised and lowered. Below the cup 10, a liquid receiving portion 19 composed of an annular recess is provided. The developer or the cleaning liquid received by the cup 10 flows into the liquid receiving portion 19 from the wafer W, and is discharged from the discharge port 20 provided at the bottom of the liquid receiving portion 19 to the outside.

As shown in FIG. 2, in the casing 9, each of the cup body modules 1 is provided with a developing nozzle arm 60 and cleaning which extend in a direction orthogonal to the arrangement direction (left-right direction) of the cup body module 1, respectively. The nozzle arm 30 is used. The developing nozzle arm 60 can be moved by a driving portion (not shown) along the guide rail 63 extending in the direction in which the cup modules 1 are arranged (left-right direction), and can be arbitrarily moved up and down by a lifting portion (not shown). The developing nozzle 62 is provided at the front end of the developing nozzle arm 60, and the developing nozzle arm 60 is used at the center of rotation of the rotating chuck 11 and the nozzle from the cup module 1 to the left in FIG. The bus bar 61 moves between. The developer nozzle 62 is connected to the developer supply unit 64 via a pipe 65, and can discharge a developer having a predetermined flow rate from the front end of the developer nozzle 62.

Further, the cleaning nozzle arm (hereinafter referred to as "nozzle arm") 30 can be moved along the guide rail 33 extending in the left-right direction as shown in FIG. 3 by a driving unit (not shown), and can be moved by a not-shown The lifting section can be raised and lowered at will. The nozzle arm 30 and the driving unit and the lifting unit provided in the nozzle arm 30 described above constitute a nozzle moving unit. As shown in FIG. 4, the first cleaning liquid nozzle 41 and the second cleaning liquid nozzle 43 which discharge a cleaning liquid such as pure water are provided at the front end of the nozzle arm 30, and a gas nozzle such as nitrogen gas which is a drying gas is discharged. The first nitrogen gas nozzle 51 and the second nitrogen gas nozzle 53 are provided. The nozzles 41, 43, 51, 53 move between the upper region of the cup module 1 and the right-facing region from the cup module 1 in FIG. In the standby area, a nozzle busbar 21 as a liquid receiving portion of each of the cleaning liquid nozzles 41, 43 is provided.

The first cleaning liquid nozzle 41 is connected to the first cleaning liquid supply unit 46 via, for example, a pipe 45. The first cleaning liquid supply unit 46 includes a cleaning liquid supply source, a pump, a valve, and the like, and can eject the cleaning liquid from the front end of the first cleaning liquid nozzle 41. Similarly to the first cleaning liquid nozzle 41, the second cleaning liquid nozzle 43 is connected to the second cleaning liquid supply unit 48 via the pipe 47, and can discharge the cleaning liquid from the second cleaning liquid nozzle 43. The first nitrogen gas nozzle 51 is connected to the first nitrogen gas supply unit 56 including a nitrogen gas supply source, a pump, a valve, and the like via a pipe 55. Nitrogen gas can be discharged from the first nitrogen gas nozzle 51. The second nitrogen gas nozzle 53 is also connected to the second nitrogen gas supply unit 58 including a nitrogen gas supply source, a pump, a valve, and the like via a pipe 57.

The arrangement of the first cleaning liquid nozzle 41, the second cleaning liquid nozzle 43, the first nitrogen gas nozzle 51, and the second nitrogen gas nozzle 53 in the nozzle arm 30 will be described. In the following description, for convenience of explanation, the cleaning liquids ejected from the first cleaning liquid nozzle 41 and the second cleaning liquid nozzle 43 are described as the first cleaning liquid and the second cleaning liquid, respectively, from the first nitrogen gas nozzle 51 and the first 2 Nitrogen gas spouted by the nitrogen gas nozzle 53 is described as the first nitrogen gas and the second nitrogen gas, respectively. The term "ejection position" as used hereinafter means a cleaning liquid or a gas which is ejected from the cleaning liquid nozzles (41, 43) or the gas nozzles (51, 53), and is ejected onto the surface of the wafer W. The approximate center of the spout area. When the ejection position is indicated by the X and Y coordinates, the center of the wafer W is the origin, the axis extending in the X direction is the X axis, and the axis extending in the Y direction is the Y axis, which will be described later in FIGS. 6 to 10 . The right side and the upper side are "positive areas".

In the first cleaning liquid nozzle 41, when the ejection position R1 is placed at a position of X = 30 mm and Y = 0 mm, the ejection position N1 of the first nitrogen gas nozzle 51 is set to X = 15 mm and Y = 0 mm. When the ejection position R1 of the first cleaning liquid nozzle 41 is located at X=30 mm and Y=0 mm, the ejection position R2 is set so as to surround the center of the wafer W around the first cleaning liquid. The position where the ejection position R1 of the nozzle 41 is rotated clockwise, for example, X=26 mm, Y=-15 mm. When the discharge position N1 of the first nitrogen gas nozzle 51 is located at X=15 mm and Y=0 mm, the second nitrogen gas nozzle 53 is set at the discharge position N1 of the first nitrogen gas nozzle 51 at the center of the wafer W. The portion is centered and rotated counterclockwise, and the distance from the X-axis is shorter than the distance from the X-axis of the ejection position R2 of the second cleaning liquid nozzle 43. In this example, the discharge position N2 of the second nitrogen gas nozzle 53 is set to, for example, discharge at a position of X=13 mm and Y=7.5 mm. The second nitrogen gas nozzle 53 is configured to eject in the direction of the periphery of the wafer W, and the first cleaning liquid nozzle 41, the second cleaning liquid nozzle 43, and the first nitrogen gas nozzle 51 are disposed to be discharged immediately below. The height of the end portion before the ejection of the first nitrogen gas nozzle 51 is set to be 25 mm above the surface of the wafer W, and the height of the end portion before the ejection of the second nitrogen gas nozzle 53 is set to be 5 mm above the surface of the wafer W. The height.

Further, the substrate cleaning device includes a control unit 5 as shown in FIG. In Fig. 5, 27 is a bus bar, and the bus bar 27 is connected to the CPU 22, the memory 23, and a program 24 for performing the steps of the substrate cleaning apparatus to perform the operations described later. In Fig. 5, 25 is a driving portion included in the nozzle moving portion, and 26 is a lifting portion included in the nozzle moving portion. The control unit 5 outputs, according to the program 24, a driving unit for moving the nozzle arm 30, a lifting unit, a cleaning liquid supply unit 46, 48, a nitrogen supply unit 56, 58 and a rotation for driving the rotary chuck 11. The control mechanism for controlling the mechanism 13 and the lifting mechanism 18 of the cup 10 and the like. The program is stored in a memory medium such as a compact disc, a hard disc, or a magneto-optical disc, and is attached to the control unit 5.

Next, the action of the first embodiment will be described. For example, the exposed wafer W is transferred to the spin chuck 11 by an external transport mechanism (not shown), and the center portion of the wafer W coincides with the center of rotation. After the outer cup 16 is raised, the wafer W is rotated at a rotation speed of, for example, 1000 rpm, and the developer nozzle 62 is positioned above the periphery of the wafer W. Thereafter, the wafer W is continuously rotated, and the developer is ejected from the developer nozzle 62 while moving from the outer side of the wafer W toward the center portion, and thereafter the developer is continuously supplied with the developer for a predetermined time. After the developer is supplied, for example, a soluble portion of the photoresist film on the surface of the wafer W is dissolved, leaving an insoluble region. Thereafter, the nozzle arm 30 is moved, and the developing solution nozzle 62 is replaced by a crucible, and a cleaning program for removing the developing solution and the dissolved matter is performed. Referring to Figures 6 to 13, the details of this cleaning procedure will be described in detail, and the cleaning procedure is carried out in the following steps. 6 to 10, the nozzle arm 30 and the ejection position of the cleaning liquid or the nitrogen gas which are ejected from the respective nozzles 41, 43, 51, 53 are schematically shown, and the ejection position of the cleaning liquid and the nitrogen gas which are ejected and spouted are attached, and the hatching is attached. .

(Step 1) First, as shown in FIG. 6, the nozzle arm 30 is moved to the position indicated by P0, and the ejection position R1 of the first cleaning liquid nozzle 41 is located at the center of the wafer W. Thereafter, as shown in FIG. 11, the wafer W is rotated at a rotation speed of, for example, 1000 rpm, and a cleaning liquid such as pure water is supplied from the first cleaning liquid nozzle 41 at a flow rate of 30 ml/sec, for example, for 10 seconds. Thereby, the centrifugal force generated by the rotation of the wafer W by the first cleaning liquid supplied to the wafer W is diffused from the central portion of the wafer W toward the peripheral portion, and the developer is washed away by the cleaning liquid.

(Step 2) Next, while the wafer W is being rotated, the first cleaning liquid is ejected from the first cleaning liquid nozzle 41, and as shown in FIG. 7, the nozzle arm 30 is moved to the right side in the X direction to P1 to make the first nitrogen gas. The ejection position N1 of the nozzle 51 is located at the center of the wafer W. At this time, the ejection position R1 of the first cleaning liquid nozzle 41 is away from the center portion of the wafer W by 15 mm toward the right side in the X direction. Further, as shown in FIG. 12, nitrogen gas is blown toward the center portion of the wafer W from the first nitrogen gas nozzle 51.

In the center portion of the wafer W, since the centrifugal force is small, even if the ejection position R1 of the first cleaning liquid nozzle 41 moves from the center portion of the wafer W toward the peripheral edge side, the surface tension of the cleaning liquid can maintain the state in which the liquid film is opened. . Here, nitrogen gas is blown toward the liquid film, whereby the liquid film is broken to form a dry region where the surface of the wafer W is exposed. After the drying region is formed, the liquid film is pulled toward the peripheral side of the wafer W by the centrifugal force caused by the rotation of the wafer W and the surface tension of the liquid film. Therefore, the dry region is instantaneously expanded to a position corresponding to the ejection position R1 of the first cleaning liquid nozzle 41 (concentric with the ejection position R1 of the first cleaning liquid nozzle 41 centering on the central portion of the wafer W).

(Step 3) Next, the wafer W is rotated, and the cleaning liquid and the gas are ejected from the first cleaning liquid nozzle 41 and the first nitrogen gas nozzle 51, respectively, and the nozzle arm 30 is directly moved to the right in the X direction of the wafer W as shown in FIG. 15mm, and located at P2. In other words, the ejection position R1 of the first cleaning liquid nozzle 41 moves to a position away from the center portion of the wafer W toward the right side in the X direction by 30 mm, and the ejection position N1 of the first nitrogen gas nozzle 51 moves to the center of the wafer W. The portion is away from the right side in the X direction by a distance of 15 mm, whereby the drying region is also expanded to a position corresponding to the ejection position R1 of the first cleaning liquid nozzle 41. Therefore, in step 3, as shown in FIG. 13, as the nozzle arm 30 moves, as the distance between the ejection position R1 of the first cleaning liquid nozzle 41 and the center portion of the wafer W increases, the liquid interface gradually faces the periphery of the wafer W. Move in direction.

At this time, as shown in FIG. 14, a strong liquid flow occurs at a position corresponding to the discharge position R1 of the first cleaning liquid nozzle 41, and nitrogen is blown at a position close to the liquid interface, thereby winding up the inner edge of the liquid flow. This liquid is rolled up, and the droplets and products are pushed to the peripheral side of the wafer W, so that a strong cleaning power can be exerted.

(Step 4) After the nozzle arm 30 has moved to the position P2, the ejection of the first cleaning liquid is stopped as shown in Fig. 9, the ejection of the second cleaning liquid is started, and the ejection of the first nitrogen gas is stopped, and the second nitrogen gas is ejected. When the ejection position R2 of the second cleaning liquid nozzle 43 is set, and the ejection position R1 of the first cleaning liquid nozzle 41 is separated from the center portion of the wafer W by 30 mm, the ejection position R2 of the second cleaning liquid nozzle 43 and the center of the wafer W are set. The distance between the portions is 30 mm, that is, the ejection position R1 of the first cleaning liquid nozzle 41 and the ejection position R2 of the second cleaning liquid nozzle 43 are located on the same circle centered on the center portion of the wafer W. Therefore, even if the nozzle for ejecting the cleaning liquid is switched from the first cleaning liquid nozzle 41 to the second cleaning liquid nozzle 43, the position of the liquid interface formed on the surface of the wafer W does not change. When the ejection position R1 of the first cleaning liquid nozzle 41 is separated from the center portion of the wafer W by 30 mm, the ejection position N1 of the first nitrogen gas nozzle 51 is set, and the ejection is separated from the center portion of the wafer W by 15 mm toward the right side. Further, the second nitrogen gas nozzle 53 is provided, and at this time, the discharge position N2 of the second nitrogen gas nozzle 53 is separated from the center portion of the wafer W by 15 mm. Therefore, even if the nozzle for blowing nitrogen gas is switched from the first nitrogen gas nozzle 51 to the second nitrogen gas nozzle 53, the distance from the nitrogen gas ejection position to the liquid interface does not change.

Further, the second nitrogen gas nozzle 53 discharges a large flow rate of nitrogen gas compared to the discharge flow rate of the first nitrogen gas nozzle 51, and as shown in FIG. 4, the discharge port faces the peripheral edge side of the wafer W. Therefore, by switching to the second nitrogen gas nozzle 53, the force at the pressing liquid interface caused by the blowing of nitrogen gas is enhanced. At this time, when the discharge position of the nitrogen gas is close to the discharge position of the cleaning liquid, there is a possibility that the cleaning liquid liquid splashes due to the impact of the ejection gas. The distance between the ejection position R2 of the second cleaning liquid nozzle 43 and the ejection position N2 of the second nitrogen gas nozzle 53 is set to be longer than the distance between the ejection position R1 of the first cleaning liquid nozzle 41 and the ejection position N1 of the first nitrogen gas nozzle 51. Therefore, even if the second nitrogen nozzle 53 is switched, the flow rate of nitrogen gas is increased, and liquid splash can be suppressed.

(Step 5) Next, the nozzle arm 30 is moved toward the peripheral edge side of the wafer W at a speed of 15 mm/sec in the X direction. FIG. 10 shows the state in which the nozzle arm 30 is located at P3 which is closer to the periphery of the wafer W than P2. The difference (d2-d3) from the ejection position R2 of the second cleaning liquid nozzle 43 to the distance d2 from the central portion of the wafer W to the distance d2 from the ejection position N2 of the second nitrogen gas nozzle 53 to the central portion of the wafer W As shown in FIG. 15, when the nozzle arm 30 is located at P2, it is shorter when it is located at P3.

Here, the changes in the d2 and d3 accompanying the movement of the nozzle arm 30 will be described. The ejection position of the nozzle is indicated by the X-Y coordinate plane (x ≧ 0) already described. When the nozzle arm 30 is moved by the distance k from the P2 in the x direction to the right side, the coordinates of the nozzles of the second cleaning liquid nozzle 43 and the nozzles of the second nitrogen nozzle 53 are as shown in Fig. 16(a). When the nozzle arm 30 is at P2, N2=(Na, Nb) When the nozzle arm 30 is at P2, R2=(Ra, Rb) After the nozzle arm 30 moves by a distance k, N2=(Na+k, Nb) After the nozzle arm 30 moves by a distance k R2 = (Ra + k, Rb). Therefore, when the moving distance is x, in d2 and d3, d2=√[(Ra+x) ² +Rb ² when the nozzle arm 30 is at P3] d3=√[(Na+x) ² +Nb ² ] when the nozzle arm 30 is located at P3.

When the nozzle arm 30 moves to the right side in the X direction, the distance d2 of the ejection position R2 of the second cleaning liquid nozzle 43 from the center portion of the wafer W can be plotted as a curve of (1) in FIG. 16(b). When the nozzle arm 30 is moved to the right side in the X direction, it is known that the discharge position N2 of the second nitrogen gas nozzle 53 is lower than the second cleaning from the discharge position N2 of the second nitrogen gas nozzle 53 to the distance d3 of the center portion of the wafer W. The ejection position R2 of the liquid nozzle 43 is closer to the X-axis and closer to the center of the wafer W. Therefore, d3 is larger than d2, and the distance from the center portion of the wafer W before moving (x=0) is small, and when moving to the right side in the X direction is the same distance as d2, the increase rate is large. Therefore, a curve showing the distance d between the movement distance x of the nozzle arm 30 and the ejection position of the nozzle from the center portion of the wafer W can be plotted as a curve of (2) in Fig. 16(b). Therefore, when the cleaning liquid is ejected from the second cleaning liquid nozzle 43, the nitrogen gas is ejected from the second nitrogen gas nozzle 53, and the nozzle arm 30 moves directly to the right side of the wafer W in the X direction, the ejection position of the cleaning liquid is from the center of the wafer W. The distance d2 between the portion and the distance d3 from the center portion of the wafer W (d2-d3) from the ejection position of the nitrogen gas gradually decreases as the nozzle arm 30 moves.

As described above, the wafer W is rotated and the cleaning liquid is supplied. Therefore, the position of the liquid interface of the cleaning liquid is slightly inward and circumferential along the ejection position of the cleaning liquid. Therefore, the difference between the distance d2 from the ejection position R2 of the second cleaning liquid nozzle 43 to the center portion of the wafer and the distance d2 from the ejection position N2 of the second nitrogen gas nozzle 53 to the center portion of the wafer is derived from nitrogen. The distance from the spout position to the liquid interface. Fig. 17 is a characteristic diagram showing the change from the center portion of the wafer W to the liquid interface, and the change in the separation distance (d2-d3) between the liquid interface and the nitrogen ejection position. As shown in FIG. 17, until the nozzle arm 30 moves to the position of P2 (the liquid interface is 30 mm from the center of the wafer W), the first cleaning liquid nozzle 41 and the first nitrogen gas nozzle 51 are used for cleaning, so the liquid interface The distance from the spout position of nitrogen is constant and constant. Then, after the nozzle arm 30 reaches P2 (the liquid interface is 30 mm from the center of the wafer W), the discharge of the cleaning liquid and the gas is switched between the second cleaning liquid nozzle 43 and the second nitrogen gas nozzle 53. Therefore, as the nozzle arm 30 moves toward the peripheral side of the wafer W along the X-axis, the liquid interface and the nitrogen gas ejection position gradually approach each other.

Exploring the effect of the supply position of nitrogen in the region around the periphery of the wafer close to the liquid interface. By the centrifugal force caused by the rotation of the wafer W, the cleaning liquid is washed away in the circumferential direction of the wafer, and when the surface of the wafer W is cleaned, the more the peripheral portion of the wafer W is, the more the cleaning liquid is from the wafer W. The center portion side is scraped, so the liquid film of the cleaning liquid becomes thick. When the liquid film of the cleaning liquid becomes thick, it is liable to cause liquid residue or liquid fragmentation due to difficulty in flowing. In the above embodiment, the flow rate of nitrogen gas is increased in a region of 30 mm or more away from the center portion of the wafer W. Therefore, the force of pushing the liquid interface toward the peripheral direction by nitrogen gas is enhanced. Further, in a region of 30 mm or more away from the center portion of the wafer W, as the nozzle arm 30 approaches the periphery of the wafer W, the spouting position of the nitrogen gas approaches the liquid interface. Therefore, the force pushing the liquid interface with nitrogen gradually increases as it approaches the circumference of the wafer W. Therefore, in the region of the peripheral edge of the wafer W, as the liquid interface approaches the periphery of the wafer W, the amount of the cleaning liquid gradually increases, but the force pushing the liquid interface toward the periphery of the wafer also increases, so that the liquid can be suppressed. Residual or liquid fragmentation.

In the above-described embodiment, the first cleaning liquid nozzle 41 and the first nitrogen gas nozzle 51 are used to rotate the wafer W, and at the same time, the cleaning liquid and the nitrogen gas are sequentially discharged to the center portion of the wafer W, so that the two nozzles 41 and 51 are crystallized. The circumference of the circle W moves. Further, the discharge of the cleaning liquid is switched to the second cleaning liquid nozzle 43 set at a position away from the movement trajectory of the first cleaning liquid nozzle 41, and the discharge of the nitrogen gas is switched to the second nitrogen gas nozzle 53. Further, the ejection of the cleaning liquid and the ejection of the gas are performed, and the two nozzles 43 and 53 are moved toward the peripheral side of the wafer W, whereby the discharge position of the nitrogen gas gradually approaches the liquid interface. Therefore, the region closer to the periphery of the wafer W, the stronger the force of pushing the liquid interface with nitrogen, the higher the cleaning effect, and the liquid residue or the liquid chipping of the cleaning liquid can be suppressed, and the cleaning can be performed satisfactorily. Further, the second cleaning liquid nozzle 43 and the second nitrogen gas nozzle 53 are used during the movement of the nozzle arm 30. Since the second nitrogen gas nozzle 53 has a large flow rate of nitrogen gas, the force at the interface of the pressure liquid is strong, and the distance between the discharge position of the cleaning liquid and the gas discharge position of the nitrogen gas can be increased, so that splashing of the liquid can be suppressed.

In the above embodiment, the first cleaning liquid nozzle 41, the second cleaning liquid nozzle 43, the first nitrogen gas nozzle 51, and the second nitrogen gas nozzle 53 are provided in the common nozzle arm 30. Therefore, the driving systems of the respective nozzles can be made common, so that the cost of the substrate cleaning device can be reduced, and the installation space of the nozzle arm 30 or the driving system can be narrow. The distance between the gas ejection position on the surface of the wafer W and the liquid interface of the cleaning liquid is preferably in the range of 9 mm to 17 mm as described later. It is preferable to set the position of the nozzle and the position of the nitrogen gas by the simulation beforehand. The distance from the liquid interface of the cleaning liquid varies within this range.

When the nozzle arm 30 is at the position P1, the ejection position R2 of the second cleaning liquid nozzle 43 may not be set to be the same as the ejection position R1 of the first cleaning liquid nozzle 41, which is centered on the center of the wafer. On the concentric circle. When the nozzle arm 30 is located at P1, the ejection position R2 of the second cleaning liquid nozzle 43 may be closer to the center of the wafer W than the ejection position R1 of the first cleaning liquid nozzle 41 at this time.

Further, the present invention is not limited to the provision of the second nitrogen gas nozzle 53, and the wafer W may be cleaned using the first nitrogen gas nozzle 51 in the procedure of step 4 or lower. At this time, as the liquid interface of the cleaning liquid approaches the periphery of the wafer W, the position of the nitrogen gas is close to the liquid interface. Therefore, the same effect can be obtained as the liquid interface approaches the periphery of the wafer W and the force at the push liquid interface is enhanced.

Further, the first cleaning liquid nozzle 41, the second cleaning liquid nozzle 43, the first nitrogen gas nozzle 51, and the second nitrogen gas nozzle 53 may be provided in separate nozzle moving portions that can be independently moved. Alternatively, the first nitrogen gas nozzle 51 may be omitted, and only the first nitrogen gas nozzle 51 may be used, and the wafer W may be cleaned in the procedure of step 4 or lower. Moreover, the present invention has a large effect when the contact angle of water of the substrate is large, for example, the contact angle of water is 65° or more, and the effect is greater when the surface of the photoresist film is cleaned.

In the first embodiment, in step 4, the ejection of the first nitrogen gas nozzle 51 is stopped, and the nitrogen gas is ejected from the second nitrogen gas nozzle 53. However, in the fourth and fifth steps, the second cleaning liquid nozzle 43 and the second nitrogen gas nozzle are used. In the case where the cleaning liquid and the gas are ejected, respectively, when a gas having a small flow rate is ejected from the first nitrogen gas nozzle 51, it is also included in the technical scope of the present invention.

[Modification of First Embodiment] As a modification of the first embodiment, the nozzle arm 30 may be a swing arm. In other words, in the first embodiment, the nozzle arm 30 is moved in the X direction to move the nozzles in a straight line, but each nozzle can be moved as if it were a circular arc. Fig. 18 shows an example in which the nozzle arm 30 is constructed using a rotation center of O1 as a center of rotation in Fig. 18. The driving portion is a rotating portion (not shown) that swings the arm, and is provided with a lifting portion (not shown), and the nozzle arm 30 can be arbitrarily moved up and down. Therefore, the nozzle arm 30, the driving portion, and the lifting portion are nozzle moving portions. The ejection position R1 of the first cleaning liquid nozzle 41 and the ejection position N1 of the first nitrogen gas nozzle 51 are provided on a circular arc path passing through the center portion of the wafer W. In the case of this embodiment, the nozzle arm 30 is rotated in step 2, whereby the ejection position R1 of the first cleaning liquid nozzle 41 moves away from the center portion of the wafer W by 15 mm, and at this time, the ejection position N1 of the first nitrogen gas nozzle 51. Located at the center of the wafer W.

In the third step, the ejection position R1 of the first cleaning liquid nozzle 41 moves away from the center portion of the wafer W by 30 mm. At this time, the ejection position N1 of the first nitrogen gas nozzle 51 is close to the liquid interface, but the distance is close to the liquid interface. Therefore, the distance between the ejection position N1 of the first nitrogen gas nozzle 51 and the liquid interface can be made substantially unchanged. Then, in step 4, the cleaning liquid and the nitrogen gas are blown from the second cleaning liquid nozzle 43 and the second nitrogen gas nozzle 53, respectively, and then, in step 5, the nozzle arm 30 is rotated to move the nozzles toward the peripheral side of the wafer W.

The distance from the center portion of the wafer W to the ejection position R2 of the second cleaning liquid nozzle 43 and the distance from the center portion of the wafer W to the ejection position N2 of the second nitrogen gas nozzle 53 will be described. The relationship between the differences. In Fig. 18, V is the distance between the rotation axis O1 of the nozzle arm 30 and the center portion of the wafer, and u and θ represent the parameters of the predetermined ejection position, and in Fig. 18, the nozzle arm 30 is at the position of P4. 2 The parameter of the discharge position N2 of the nitrogen nozzle 53. u, away from the rotation axis O1, the distance of the circular arc path passing through the center of the wafer W (the deviation from the outer side of the circular path is +, the deviation toward the center side is -), and the rotation of the θ-type nozzle arm 30 Angle (the nozzle position is 0 when the line connecting the rotation axis O1 and the center of the wafer W is 0, and the clockwise direction is +).

The rotation axis O1 is outside the area of the wafer, and the nozzle moves from the center portion of the wafer W toward the periphery, and reaches the periphery of the wafer W in the range of θ of 0 to 90 degrees. Considering the change in the distance d from the ejection position of the nozzle of the nozzle arm 30 to the center of the wafer when the nozzle arm 30 is rotated, d = √ [u ² + 2uV + 2V ^{2 -} 2V (u + V) cos θ]. Therefore, the distance between the ejection position of the nozzle and the center portion of the wafer when the nozzle arm 30 is rotated is the distance V between the rotation axis O1 of the nozzle arm 30 and the center portion of the wafer W, the rotation angle θ, and the distance from the circular path. Decide.

Therefore, the change in the distance d2 from the center portion of the wafer W at the ejection position R2 of the second cleaning liquid nozzle 43 when the arm is rotated as shown in Fig. 18 is indicated by a solid line shown by (3) in Fig. 19 . The change in the distance d3 from the center portion of the wafer W at the ejection position N2 of the second nitrogen gas nozzle 53 when the arm is rotated is indicated by a solid line shown by (4) in FIG. Therefore, as the arm is rotated, the nozzle arm 30 is rotated in the circumferential direction of the wafer W, the distance D2 between the ejection position R2 of the second cleaning liquid nozzle 43 and the center portion of the wafer W, and the ejection of the second nitrogen gas nozzle 53 are caused. The difference (d2-d3) between the position N2 and the distance d3 of the center portion of the wafer W is gradually shortened. Therefore, as the nozzle arm 30 moves toward the periphery of the wafer, the distance between the liquid interface and the nitrogen gas ejection position gradually approaches, and the force at the pressing liquid interface is enhanced. Therefore, liquid residue or liquid fragmentation can be suppressed.

[Second Embodiment] As the substrate cleaning apparatus according to the second embodiment, two nozzle arms may be included. In the second embodiment, as shown in FIG. 20 and FIG. 21, the first nozzle arm 38 similar to the nozzle arm 30 shown in the first embodiment except for the second cleaning liquid nozzle 43 is included, and another nitrogen gas is included. The second nozzle arm 39 of the nozzle 59. In the figure, the 60-series developing nozzle arm, the 61-series developer nozzle bus bar, and the 63-series rail. Similarly to the nozzle arm 30, the second nozzle arm 39 is supported by a driving portion and a lifting portion, and moves along a guide rail 69 that extends parallel to the guide rail 33 of the first nozzle arm 38. The second nozzle arm 39 moves in a region different from the region where the first nozzle arm 38 moves on the wafer W, for example, from the center portion of the wafer W in the region on the left side in the X direction. The other nitrogen gas nozzle 59 is connected to the other nitrogen gas supply unit 71 via the pipe 70, similarly to the first nitrogen gas nozzle 51 and the second nitrogen gas nozzle 53.

The cleaning process for cleaning the wafer W by the substrate cleaning apparatus according to the second embodiment will be described with reference to Figs. 22 to 26 . Steps 1 and 3 are the same as steps 1 to 3 shown in the first embodiment, as shown in Figs. 22 and 23. The first nozzle arm 38 moves, and 俾R1 and N1 are sequentially located at the center of the wafer W. unit. In the second nozzle arm 39, the nitrogen gas ejection position N3 which is ejected from the other nitrogen gas nozzle 59 is standby from the center of the wafer W in the X direction at a position of 60 mm in the left direction in the drawing.

(Step 4) As shown in Fig. 24, the ejection position R1 of the first cleaning liquid nozzle 41 is located 30 mm from the center portion of the wafer W, and the ejection position N1 of the first nitrogen gas nozzle 51 is located 15 mm from the center portion of the wafer W. After the position, the nozzle for discharging nitrogen gas is switched from the first nitrogen gas nozzle 51 to the second nitrogen gas nozzle 53.

(Step 5) Thereafter, the first nozzle arm 38 moves to a distance (in this example, 60 mm) from the center portion of the wafer W at the ejection position N2 of the second nitrogen gas nozzle 53, and the ejection position of the other nitrogen gas nozzle 59 N3 is the same distance from the center of the wafer W. During this period, the second cleaning liquid is ejected and the second nitrogen gas is ejected, and the second nitrogen gas nozzle 53 has a larger flow rate than the first nitrogen gas nozzle 51. Therefore, in step 5, the liquid can be pushed more strongly than steps 1 to 3. interface.

(Step 6) Thereafter, the nozzle for switching the nitrogen gas is switched to the other nitrogen gas nozzle 59, and the first nozzle arm 38 and the second nozzle arm 39 are moved in the circumferential direction of the wafer W. Fig. 25 shows a state in which the discharge of nitrogen gas is switched from the second nitrogen gas nozzle 53 to the other nitrogen gas nozzle 59. At this time, the first nozzle arm 38 moves to the right side in the X direction as shown in FIG. 26, and the second nozzle arm 39 moves to the left side in the X direction. The moving speed of the second nozzle arm 39 is set to be faster than the first nozzle arm 38. Therefore, the difference between the distance L1 from the ejection position of the cleaning liquid to the central portion of the wafer W and the distance L2 from the ejection position of the nitrogen gas to the central portion of the wafer W gradually decreases. For example, L2-L1 is close to 9 mm from 17 mm. As a result, the ejection position N3 of the other nitrogen gas nozzle 59 approaches the liquid interface as it approaches the peripheral edge side of the wafer W, so the force at the nitrogen pressing liquid interface gradually increases. Therefore, the liquid residue or the liquid chipping can be suppressed, and the same effects as those of the first embodiment can be obtained. When the gas is ejected from the other nitrogen gas nozzle 59 of the second nozzle arm 39 and the second nozzle arm 39 moves toward the peripheral side of the wafer W, a small amount of gas is ejected from the nitrogen gas nozzles 51 and 53 of the first nozzle arm 38, for example. Also included in the technical scope.

In the first embodiment or the second embodiment, a description will be given of a preferred example in which nitrogen gas is supplied from the first nitrogen gas nozzle 51 to the center portion after the cleaning liquid is supplied to the center portion of the wafer W. As stated in the column of the prior art, when the difference in contact angle between the photoresist and the substrate is large, liquid residue tends to remain on the side of the substrate, and after the liquid remains, it becomes a cause of residue defects (development defects due to the presence of residue). For example, when a tantalum oxide film is used for the substrate, the difference in contact angle is relatively large, so that it is more preferable to carry out a cleaning treatment capable of suppressing liquid residue. Note that near the center of the wafer W, the centrifugal force is weak in this portion, so liquid residue is liable to occur. Here, it is also effective to extend the first nitrogen gas ejection time in the central portion of the wafer W. However, the processing time is prolonged, which may cause a decrease in processing ability.

In this regard, as an example of an effective method, the height of the end portion before the ejection of the first nitrogen gas nozzle 51 is set above the surface of the wafer W, for example, a height of 5 mm. At this time, the distance from the end of the first nitrogen gas nozzle 51 to the surface of the wafer W is shortened, and it is possible to suppress the diffusion of the nitrogen gas which is ejected from the first nitrogen gas nozzle 51 to the surface of the wafer W, thereby allowing the gas to be more sheared. The breaking stress pushes the liquid interface. Further, the shear stress of nitrogen gas is increased, and the first half is supplied with nitrogen gas at a low flow rate to form a dry core (dry region in the central portion of the liquid), and then the second half is supplied with nitrogen gas at a high flow rate to expand the dried core. In this way, the liquid residue in the central portion of the wafer W can be more suppressed. The time of low flow and the time of high flow are not limited to the same. Specific examples are described in the column of the examples to be described later.

Further, a method for suppressing the liquid residue in the region other than the central portion of the wafer W is described. As one of the methods, the second nitrogen gas nozzle 53 according to the first embodiment is used as an example, that is, as shown in FIG. 27, the second nitrogen gas nozzle 53 is provided, and the angle θ2 of the discharge direction of the nitrogen gas with respect to the horizontal plane is, for example. 45 degrees angle. The direction in which the nitrogen gas is ejected is the direction in which the center of the airflow ejected from the spout is directed. After the second nitrogen gas nozzle 53 obliquely sprays nitrogen gas on the surface of the wafer W, the shear stress applied to the liquid interface formed on the surface of the wafer W is formed on the wafer W when the nitrogen is sprayed perpendicularly to the wafer W. The shear stress applied to the liquid interface of the surface is large. When the angle θ2 of the nitrogen gas ejection direction of the second nitrogen gas nozzle 53 with respect to the horizontal plane is 45 degrees, the shear stress applied to the liquid interface is 1.5 times stronger than the shear stress applied to the liquid interface when the angle θ2 is 90 degrees. By setting the discharge direction of the nitrogen gas of the second nitrogen gas nozzle 53 to 45 degrees with respect to the horizontal plane, the shear stress applied to the liquid interface is increased, and even if the scanning speed of the nozzle arm 30 is increased, liquid residue or liquid fragmentation can be suppressed. When the discharge direction of the nitrogen gas of the second nitrogen gas nozzle 53 is set to be 90 degrees with respect to the horizontal plane, the flow rate of nitrogen gas may be large, and a large shear stress may be obtained for the liquid surface, but liquid splash or haze may occur. Therefore, it is effective to obliquely set the direction in which the nitrogen gas is blown in the second nitrogen gas nozzle 53, and it is particularly preferable to set it to 45 degrees with respect to the horizontal plane.

Further, the distance between the ejection position N2 of the second nitrogen gas nozzle 53 and the inner edge (liquid interface) of the liquid is used to reduce the appropriate distance of the residue, corresponding to the type of the photoresist on the wafer W, the material of the base film, and the cleaning. The recipe for processing is different. Therefore, the distance should be added as a parameter in the processing category of the cleaning process, and the distance is determined by selecting the processing category. When the distance between the ejection position N2 of the second nitrogen gas nozzle 53 and the inner edge of the liquid is inclined from the horizontal plane in the direction in which the nitrogen gas is ejected, for example, when the direction in which the nitrogen gas is ejected is 45 degrees with respect to the horizontal plane, the second nitrogen gas nozzle can be adjusted. 53 height changes.

For example, as shown in FIG. 28, when the height of the front end portion of the second nitrogen gas nozzle 53 from the surface of the wafer W is h1, the surface of the wafer W is ejected from the ejection position N2 of the second nitrogen gas nozzle 53 to the second cleaning liquid nozzle 43. The distance of the ejection position R2 is, for example, d11. Further, as shown in FIG. 29, the nozzle arm 30 is raised, and the height of the front end portion of the second nitrogen gas nozzle 53 from the surface of the wafer W is h2, and the ejection position N2 of the second nitrogen gas nozzle 53 is formed on the wafer W. The surface moves in a direction in which the front end portion of the second nitrogen gas nozzle 53 is inclined. On the other hand, since the second cleaning liquid nozzle 43 is disposed to be discharged immediately below, even when the nozzle arm 30 is raised and lowered on the surface of the wafer W, the ejection position R2 of the second cleaning liquid nozzle 43 does not change. Therefore, the discharge position N2 of the second nitrogen gas nozzle 53 is close to the discharge position R2 of the second cleaning liquid nozzle 43, and the distance from the discharge position N2 of the second nitrogen gas nozzle 53 to the discharge position R2 of the second cleaning liquid nozzle 43 is d12. Thus, the distance from the ejection position N2 of the second nitrogen gas nozzle 53 to the ejection position R2 of the second cleaning liquid nozzle 43 can be changed by raising and lowering the nozzle arm 30. Further, the discharge direction of the cleaning liquid of the second cleaning liquid nozzle 43 may not be directly downward, and may be inclined, for example, at an angle different from the direction in which the gas is ejected from the second nitrogen gas nozzle 53 (the angle with respect to the horizontal plane).

As shown in FIG. 27, in advance, in accordance with the type of the cleaning process of the wafer W, an appropriate distance from the ejection position N2 of the second nitrogen gas nozzle 53 to the inner edge of the liquid interface is obtained in advance, and the memory is stored in the control unit 5. The body 23 memorizes the type (recipe) of the cleaning process of the wafer W, and the data corresponding to the set value of the height of the nozzle arm 30. Further, the control unit 5 reads the height of the nozzle arm 30 of the type corresponding to the cleaning process of the wafer W from the memory 23, and outputs a control signal for raising and lowering the nozzle arm 30 to the lifting unit 26. Therefore, the height of the nozzle arm 30 is also determined when the type of the cleaning process is selected for the batch of the wafer W. In the category of the cleaning process, the parameter may be only the height of the nozzle arm 30. In this case, when the height of the plurality of nozzle arms 30 is set, each height is a type of cleaning process.

According to this configuration, it is possible to set an appropriate distance from the second nitrogen gas ejection position N2 to the inner edge of the liquid interface in accordance with the type of the cleaning process of the wafer W. Therefore, even in the region other than the center portion of the wafer W, The liquid residue of the cleaning liquid or the liquid is suppressed from being broken, and the cleaning is performed satisfactorily.

The shear stress can be enhanced by setting the angle θ2 of the direction in which the nitrogen gas is ejected to the horizontal plane, for example, 30 degrees to 60 degrees. However, when the angle θ2 is 45 degrees ± 5 degrees, the shear stress is stronger, and a larger effect can be obtained.

In the first embodiment of the present invention, the first cleaning liquid nozzle 41 (reporting position indicated by R1), the second cleaning liquid nozzle 43 (removing position by R2), and the first nitrogen gas nozzle 51 are used. N1 indicates the ejection position) and the second nitrogen gas nozzle 53 (the ejection position is indicated by N2), and the characteristics shown in Figs. 16(b) and 17 are secured. In other words, in the first embodiment, the arrangement of the four nozzles 41, 43, 51, and 53 is set, and when one nozzle arm 30 is used, the liquid moves in the X direction which is the direction in which the guide rail 30 extends. The relationship between the interface and the nitrogen discharge (supply) position is as shown in Fig. 17.

However, by arranging the arrangement of the four nozzles 41, 43, 51, and 53 and the number of the nozzle arms to be used and the moving direction, the liquid interface and the nitrogen atmosphere can be configured in addition to the configuration described in the first embodiment. The relationship between the ejection (supply) positions is the relationship shown in FIG. For example, two nozzle arms may be used, and two of the nozzles 41, 43, 51, and 53 may be disposed in one of the nozzle arms, and the remaining two of the nozzle arms may be disposed on the other nozzle arm by moving the two nozzle arms. The same operation as in the first embodiment. At this time, the nozzle arms of both of them can move away from each other, and one of the nozzle arms can be moved in the X direction, and the other nozzle arm can be moved in the Y direction to set the layout, which is the same as the operation of the first embodiment. List these examples below.

When the first nozzle arm 30 is moved in one direction, the layout of the nozzles 41, 43, 51, 53 shown in FIG. 6, that is, the layout of the ejection positions R1, R2, N1, and N2, may be centered on R1. Rotating the 90 degree layout, the nozzle arm 30 moves in the Y direction. At this time, the nozzle arm 30 is combined with the moving mechanism in the Y direction.

Next, an example in which the nozzles 41, 43, 51, 53 are dispersed in the two nozzle arms 30A, 30B will be described. In order to avoid complication of the description, the layout of the nozzles 41, 43, 51, and 53 is not described, and the ejection positions R1, R2, N1, and N2 of the respective nozzles 41, 43, 51, and 53 are used instead. For example, the expression "the first cleaning liquid nozzle 41 is provided in the nozzle arm and the ejection position R1 is located as shown in the figure" is simplified, and the performance of "the nozzle arm is such that R1 is located as shown in the figure" is simplified.

Fig. 30 shows an example in which N1 and N2 are located in one of the nozzle arms 30A, and R1 and R2 are located in the other nozzle arm 30B, and R1 is located in the center of the wafer W. Fig. 31 shows a state in which the two nozzle arms 30A and 30B are moved so that N1 is located at the center of the wafer W, and Fig. 32 shows a position where the discharge of the cleaning liquid and the nitrogen gas is switched from R1 and N1 to R2 and N2. 30 to 32 correspond to Figs. 6 to 8 respectively.

In addition, in FIG. 33, although N1 and N2 are located in one nozzle arm 30A, and R1 and R2 are located in the other nozzle arm 30B, the positions of the two nozzle arms 30A and 30B in the Y direction are different. 33 to 35 show the state in which the two nozzle arms 30A and 30B are sequentially moved, and correspond to Figs. 6 to 8 respectively. In this way, as another two nozzle arms 30A and 30B are arranged in the X direction, the other layouts of R1, R2, N1, and N2 having the same functions as those of the first embodiment are obtained, and FIG. 36 to FIG. 49.

In Fig. 50, R2 and N2 are located in one of the nozzle arms 30A, and R1 and N1 are located in the other nozzle arm 30B. However, R1 and N1 are located away from each other in the Y direction. At this time, one of the nozzle arms 30B moves in the Y direction (a direction orthogonal to the direction in which the guide rails 33 of the nozzle arms 30 extend). 50 to 52 show the state in which the two nozzle arms 30A and 30B are sequentially moved, and correspond to Figs. 6 to 8 respectively. Thus, another layout in which the one of the two nozzle arms 30A and 30B moves in the Y direction and the other side moves in the X direction to obtain the same functions as those of the first embodiment, R1, R2, N1, and N2, is shown in Fig. 53. ~ Figure 59.

Further, a method of obtaining the action of the first embodiment by using one nozzle arm movable in both directions of the X direction and the Y direction will be described. Fig. 60 shows an example in which one cleaning liquid nozzle and one nitrogen nozzle are provided in one nozzle arm 80, and the ejection positions of the cleaning liquid nozzle and the nitrogen nozzle are shown as N and R, respectively. That is, in this example, the nozzle arm 80 moves in the X direction and the Y direction, whereby R also serves as R1 and R2, and N also serves as N1 and N2. 60 to 62 show the state in which the nozzle arms 80 are sequentially moved, and correspond to Figs. 6 to 8 respectively. In this example, one of the cleaning liquid nozzles at the ejection position is indicated by R, and is used as the first cleaning liquid nozzle 41 in the movement stage after the position shown in Fig. 62 as the first cleaning liquid nozzle 41. 2 The cleaning liquid nozzle 43, for example, as shown in Fig. 63, the nozzle arm 80 moves in the Y-axis direction.

Further, in Fig. 64, two nozzle arms 30 and 80 are used, and one of the nozzle arms 30 is provided with the same function as that of the first embodiment, and R1, R2, N1, and N2 are disposed. Further, another nitrogen gas nozzle 59 described in the second embodiment is provided in the other nozzle arm 80 (the ejection position is shown as N3). In this example, the movement mode of one of the nozzle arms 30 is the same as that of the first embodiment. However, when N2 is located at a position of 60 mm from the center of the wafer W, the N2 is switched from N2 to N3. Therefore, as shown in the second embodiment, the moving speed of the other nozzle arm 80 in this example is faster than the movement speed of the nozzle arm 30. Further, the moving speed of the other nozzle arm 80 may be the same as the moving speed of one of the nozzle arms 30.

In the example of Fig. 64, the nozzle arms 30, 80 are moved in the X direction. However, when the nozzle arms 30, 80 are moved in the Y direction, the layout of R1, R2, N1, N2, and N3 is as shown in Fig. 65. When the nozzle arms 30 and 80 are rotated as shown in the modification of the first embodiment, the layout of R1, R2, N1, N2, and N3 is as shown in FIG.

[Example 1] In order to evaluate the present invention, the substrate cleaning apparatus according to the first embodiment was used to supply the developer W to the wafer W exposed by the evaluation pattern, and the cleaning treatment according to the examples and the comparative examples was performed to calculate the defects of the pattern. The contact angle difference between the photoresist film formed on the surface of the wafer W used in the example and the antireflection film was 37.8°. The rotation speed of the wafer in the cleaning process was set to 750 rpm, and the moving speed of the nozzle arm 30 was set to 10 mm/sec. Further, as a comparative example, the substrate cleaning apparatus having the same configuration as that of the embodiment is used. After the completion of the step 2, the cleaning liquid nozzle and the nitrogen gas nozzle are not switched, and the first cleaning liquid and the first nitrogen gas are ejected toward the wafer in the X direction. The nozzle arm 30 is moved toward the periphery of the wafer W to clean the wafer. At this time, the distance from the gas ejection position to the liquid interface is constant. In the comparative example, defects of 2561 patterns were confirmed, and in the examples, the number of defects of the pattern was reduced to eight, and it was confirmed that the cleaning effect of the present invention was high.

[Evaluation Test] In order to investigate the influence of the separation distance between the nitrogen ejection position and the liquid interface of the cleaning liquid on the cleaning effect of the wafer W, the following evaluation test was performed. In the substrate cleaning apparatus, by changing the position of the first nitrogen gas nozzle 51 provided in the nozzle arm 30, the distance between the following seven liquid interfaces and the nitrogen gas ejection position is set, and only the first cleaning liquid nozzle 41 and the first nitrogen gas nozzle 51 are used. The developer W is supplied to the wafer W exposed using the evaluation pattern, and then cleaned. After the wafer W is cleaned, a drying process is performed to calculate the number of defects existing in the pattern of 12 to 15 cm from the center portion of the wafer. The results are shown in Table 1 below. [Table 1] <TABLE border="1" borderColor="#000000" width="85%"><TBODY><tr><td> Disengagement distance</td><td> 7mm </td><td> 9mm </td><td> 11mm </td><td> 13mm </td><td> 15mm </td><td> 17mm </td><td> 19mm </td></tr>< Tr><td> Defects in the pattern</td><td> 264 </td><td> 6 </td><td> 8 </td><td> 5 </td><td> 13 </ Td><td> 10 </td><td> 52 </td></tr></TBODY></TABLE>

It can be said that the number of defects of the pattern is sufficiently suppressed, and the distance between the nitrogen gas ejection position and the liquid interface should be set within a range of 9 mm to 17 mm.

[Example 2] In order to evaluate the present invention, the substrate cleaning apparatus according to the first embodiment is used to supply the developer W to the wafer W exposed by the evaluation pattern, and the height of the end portion of the first nitrogen gas nozzle 51 is set to be the wafer W. The upper 25 mm and 5 mm are cleaned, patterned, and the surface of the wafer W is inspected. A residue defect (developing defect) within 3 cm from the center of the wafer W was calculated. When the height of the front end portion of the first nitrogen gas nozzle 51 is set to be 25 mm above the wafer W, there are eight defects, and when the height of the front end portion of the first nitrogen gas nozzle 51 is set to be 5 mm above the wafer W, there are three defects. It can be said that the liquid remaining in the vicinity of the center portion of the wafer W can be reduced by setting the height of the end portion before the first nitrogen gas nozzle 51 to be low.

[Example 3] In order to investigate the influence of the distance between the ejection position of the nitrogen gas which was ejected at an angle of 45 degrees with respect to the horizontal plane and the liquid interface of the cleaning liquid, the following evaluation test was performed on the effect of the cleaning effect of the wafer W. In the substrate cleaning apparatus, the second nitrogen gas nozzle 53 provided in the nozzle arm 30 is disposed at an angle of 45 degrees from the horizontal plane, and the installation position is moved toward the center side of the wafer W. When the distance between the ejection position N2 of the second nitrogen gas nozzle 53 and the liquid interface of the cleaning liquid is set to be Amm, A+1 mm, and A+2 mm, when the distance is A+1 mm, the defect is about three times larger than Amm, and about six times larger than A+2 mm. Therefore, it can be understood that the cleaning effect can be changed by changing the distance.

Although the preferred embodiments of the present invention have been described above with reference to the drawings, the present invention is not limited by the related examples. It is to be understood that, as long as the person skilled in the art is aware of the scope of the invention, it is a matter of course that various modifications or modifications can be made within the scope of the invention.

1‧‧‧ cup body module
11‧‧‧Rotary suction cup
W‧‧‧ wafer
10‧‧‧ cup body
12‧‧‧Rotary axis
13‧‧‧Rotating mechanism
14‧‧‧round plate
15‧‧‧ ring members
16‧‧‧ outer cup
17‧‧‧ inner cup
18‧‧‧ Lifting mechanism
19‧‧‧Liquid Acceptance Department
20‧‧‧Discharge discharge
30‧‧‧Cleaning nozzle arm
60‧‧‧Developing nozzle arm
62‧‧‧developer nozzle
65‧‧‧Pipe
64‧‧‧Development Supply Department
41‧‧‧1st cleaning fluid nozzle
43‧‧‧Second cleaning fluid nozzle
51‧‧‧1st nitrogen nozzle
53‧‧‧2nd nitrogen nozzle
45‧‧‧Pipe
46‧‧‧1st cleaning solution supply unit
47‧‧‧Pipe
48‧‧‧Second cleaning solution supply unit
55‧‧‧Pipe
56‧‧‧1st nitrogen supply unit
57‧‧‧Pipe
58‧‧‧2nd nitrogen supply unit

Fig. 1 is a longitudinal sectional view showing a substrate cleaning apparatus according to a first embodiment.

Fig. 2 is a plan view showing the substrate cleaning apparatus according to the first embodiment.

Fig. 3 is a perspective view showing the configuration of a nozzle arm.

Figure 4 is a perspective view showing the front end of the nozzle arm.

Fig. 5 is an explanatory view showing the configuration of a control unit according to the first embodiment.

Fig. 6 is an explanatory view showing the position of the nozzle arm and the state of ejection from the nozzle in the cleaning process of the substrate.

Fig. 7 is an explanatory view showing the position of the nozzle arm and the state of ejecting from the nozzle in the cleaning process of the substrate.

Fig. 8 is an explanatory view showing the position of the nozzle arm and the state of ejecting from the nozzle in the cleaning process of the substrate.

Fig. 9 is an explanatory view showing the position of the nozzle arm and the state of ejecting from the nozzle in the cleaning process of the substrate.

Fig. 10 is an explanatory view showing the position of the nozzle arm and the state of ejecting from the nozzle in the cleaning process of the substrate.

Fig. 11 is an explanatory view showing a state in which the wafer is cleaned in the cleaning process of the substrate.

Fig. 12 is an explanatory view showing a state in which the wafer is cleaned in the cleaning process of the substrate.

Fig. 13 is an explanatory view showing a state in which the wafer is cleaned in the cleaning process of the substrate.

Fig. 14 is an explanatory view showing a state in which the liquid interface is pressed with nitrogen.

Fig. 15 is an explanatory view showing the positions of the cleaning liquid nozzle and the nitrogen nozzle when the nozzle arm is moved.

16(a) to 16(b) are explanatory views showing the relationship between the moving distance of the nozzle arm and the distance from the ejection position to the center of the wafer.

Fig. 17 is a characteristic diagram showing the relationship between the moving distance of the nozzle arm and the distance between the liquid interface and the nitrogen ejection position.

Fig. 18 is a plan view showing a substrate cleaning apparatus according to a modification of the first embodiment.

Figure 19 is a characteristic diagram showing the relationship between the angle of rotation of the nozzle arm and the distance of the nozzle from the center of the wafer.

Fig. 20 is a longitudinal sectional view showing a substrate cleaning apparatus according to a second embodiment.

Fig. 21 is a plan view showing the substrate cleaning apparatus according to the second embodiment.

Fig. 22 is an explanatory view showing the position of the nozzle arm and the state of ejecting from the nozzle in the cleaning process of the substrate.

Fig. 23 is an explanatory view showing the position of the nozzle arm and the state of ejecting from the nozzle in the cleaning process of the substrate.

Fig. 24 is an explanatory view showing the position of the nozzle arm and the state of ejecting from the nozzle in the cleaning process of the substrate.

Fig. 25 is an explanatory view showing the position of the nozzle arm and the state of ejecting from the nozzle in the cleaning process of the substrate.

Fig. 26 is an explanatory view showing the position of the nozzle arm and the state of ejecting from the nozzle in the cleaning process of the substrate.

Fig. 27 is a side view showing a substrate cleaning apparatus according to another example of the embodiment of the present invention.

Fig. 28 is an explanatory view for explaining the action of the substrate cleaning apparatus according to another example of the embodiment of the present invention.

Fig. 29 is an explanatory view for explaining the action of the substrate cleaning apparatus according to another example of the embodiment of the present invention.

Fig. 30 is an explanatory view showing the position of the nozzle arm and the state of ejection from the nozzle in the cleaning process of the substrate.

Fig. 31 is an explanatory view showing the position of the nozzle arm and the state of ejecting from the nozzle in the cleaning process of the substrate.

Fig. 32 is an explanatory view showing the position of the nozzle arm and the state of ejecting from the nozzle in the cleaning process of the substrate.

Fig. 33 is an explanatory view showing the position of the nozzle arm and the state of ejecting from the nozzle in the cleaning process of the substrate.

Fig. 34 is an explanatory view showing the position of the nozzle arm and the state of ejecting from the nozzle in the cleaning process of the substrate.

Fig. 35 is an explanatory view showing the position of the nozzle arm and the state of ejection from the nozzle in the cleaning process of the substrate.

Fig. 36 is an explanatory view showing an example of a nozzle provided in a nozzle arm.

Fig. 37 is an explanatory view showing an example of a nozzle provided in a nozzle arm.

Fig. 38 is an explanatory view showing an example of a nozzle provided to a nozzle arm.

Fig. 39 is an explanatory view showing an example of a nozzle provided in a nozzle arm.

Fig. 40 is an explanatory view showing an example of a nozzle provided in a nozzle arm.

Fig. 41 is an explanatory view showing an example of a nozzle provided in a nozzle arm.

Fig. 42 is an explanatory view showing an example of a nozzle provided to a nozzle arm.

Fig. 43 is an explanatory view showing an example of a nozzle provided in a nozzle arm.

Fig. 44 is an explanatory view showing an example of a nozzle provided to the nozzle arm.

Fig. 45 is an explanatory view showing an example of a nozzle provided in a nozzle arm.

Fig. 46 is an explanatory view showing an example of a nozzle provided in a nozzle arm.

Fig. 47 is an explanatory view showing an example of a nozzle provided in a nozzle arm.

Fig. 48 is an explanatory view showing an example of a nozzle provided in a nozzle arm.

Fig. 49 is an explanatory view showing an example of a nozzle provided in a nozzle arm.

Fig. 50 is an explanatory view showing the position of the nozzle arm and the state of ejecting from the nozzle in the cleaning process of the substrate.

Fig. 51 is an explanatory view showing the position of the nozzle arm and the state of ejecting from the nozzle in the cleaning process of the substrate.

Fig. 52 is an explanatory view showing the position of the nozzle arm and the state of ejecting from the nozzle in the cleaning process of the substrate.

Fig. 53 is an explanatory view showing an example of a nozzle provided in a nozzle arm.

Fig. 54 is an explanatory view showing an example of a nozzle provided in the nozzle arm.

Fig. 55 is an explanatory view showing an example of a nozzle provided in the nozzle arm.

Fig. 56 is an explanatory view showing an example of a nozzle provided in the nozzle arm.

Fig. 57 is an explanatory view showing an example of a nozzle provided in a nozzle arm.

Fig. 58 is an explanatory view showing an example of a nozzle provided in a nozzle arm.

Fig. 59 is an explanatory view showing an example of a nozzle provided in a nozzle arm.

Fig. 60 is an explanatory view showing the position of the nozzle arm and the state of ejecting from the nozzle in the cleaning process of the substrate.

Fig. 61 is an explanatory view showing the position of the nozzle arm and the state of ejecting from the nozzle in the cleaning process of the substrate.

Fig. 62 is an explanatory view showing the position of the nozzle arm and the state of ejecting from the nozzle in the cleaning process of the substrate.

Fig. 63 is an explanatory view showing the position of the nozzle arm and the state of ejection from the nozzle in the cleaning process of the substrate.

Fig. 64 is an explanatory view showing an example of a nozzle provided to the nozzle arm.

Fig. 65 is an explanatory view showing an example of a nozzle provided in a nozzle arm.

Fig. 66 is an explanatory view showing an example of a nozzle provided in a nozzle arm.

1‧‧‧ cup body module

11‧‧‧Rotary suction cup

W‧‧‧ wafer

10‧‧‧ cup body

12‧‧‧Rotary axis

13‧‧‧Rotating mechanism

14‧‧‧round plate

15‧‧‧ ring members

16‧‧‧ outer cup

17‧‧‧ inner cup

18‧‧‧ Lifting mechanism

19‧‧‧Liquid Acceptance Department

20‧‧‧Discharge discharge

30‧‧‧Cleaning nozzle arm

60‧‧‧Developing nozzle arm

62‧‧‧developer nozzle

65‧‧‧Pipe

64‧‧‧Development Supply Department

41‧‧‧1st cleaning fluid nozzle

43‧‧‧Second cleaning fluid nozzle

51‧‧‧1st nitrogen nozzle

53‧‧‧2nd nitrogen nozzle

45‧‧‧Pipe

46‧‧‧1st cleaning solution supply unit

47‧‧‧Pipe

48‧‧‧Second cleaning solution supply unit

55‧‧‧Pipe

56‧‧‧1st nitrogen supply unit

57‧‧‧Pipe

58‧‧‧2nd nitrogen supply unit

Claims (20)

A substrate cleaning apparatus that cleans a substrate while rotating the substrate, and includes a substrate holding portion that horizontally holds the substrate, and a rotating mechanism that rotates the substrate holding portion about a vertical axis; the first cleaning liquid a nozzle and a second cleaning liquid nozzle for respectively supplying a cleaning liquid to a substrate held by the substrate holding portion; a gas nozzle for injecting gas to a substrate held by the substrate holding portion; and a nozzle moving portion for making the first a cleaning liquid nozzle, a second cleaning liquid nozzle, and a gas nozzle moving; and a control unit that outputs a control signal to perform a step of: ejecting a cleaning liquid from a center of the substrate from the first cleaning liquid nozzle; and subsequently, the cleaning liquid After the ejection position is moved from the center portion of the substrate toward the peripheral edge side, the gas is ejected from the central portion of the substrate, and then the first cleaning liquid nozzle and the gas nozzle are ejected with the cleaning liquid and the gas, respectively. The cleaning liquid nozzle and the ejection position of the gas nozzle move toward the peripheral edge side of the substrate; and secondly, the ejection of the cleaning liquid is ejected from the first cleaning liquid When switching to the second cleaning liquid nozzle, the cleaning liquid is ejected from the second cleaning liquid nozzle, and the gas is ejected from the gas nozzle, and the respective ejection positions of the second cleaning liquid nozzle and the gas nozzle are moved toward the peripheral edge side of the substrate; The ejection position of the second cleaning liquid nozzle is set at a position shifted from the ejection position of the ejection position of the first cleaning liquid nozzle. When the distance from the ejection position of the second cleaning liquid nozzle to the center of the substrate is d2, and the distance from the ejection position of the gas nozzle to the center of the substrate is d3, when the cleaning liquid is ejected from the second cleaning liquid nozzle, d3 <d2, and as the second cleaning liquid nozzle moves toward the peripheral side of the substrate, the difference between d2 and d3 gradually decreases. The substrate cleaning apparatus according to claim 1, wherein the first cleaning liquid nozzle, the second cleaning liquid nozzle, and the gas nozzle are provided in a common nozzle moving portion. The substrate cleaning apparatus according to claim 1, wherein a nozzle moving portion of at least one of the first cleaning liquid nozzle, the second cleaning liquid nozzle, and the gas nozzle is provided, and a nozzle moving portion provided with another nozzle is provided. Individually moved independently. The substrate cleaning apparatus according to claim 1, wherein the gas nozzle includes: a first gas nozzle that is used to eject gas at a center portion of the substrate; and a second gas nozzle that is provided to move from the first gas nozzle When the trajectory is displaced, the cleaning liquid is ejected from the second cleaning liquid nozzle, and the respective ejection positions of the cleaning liquid and the gas are moved toward the peripheral side of the substrate. The substrate cleaning apparatus of claim 4, wherein the gas discharge flow rate of the second gas nozzle is set to be larger than a discharge flow rate of the gas in the first gas nozzle. The substrate cleaning device according to the fourth aspect of the invention, wherein the second cleaning liquid nozzle and the second gas nozzle are provided in a common nozzle moving portion that can be arbitrarily moved up and down by a lifting mechanism, and a gas ejection direction of the second gas nozzle Is inclined within a range of 30 to 60 degrees with respect to a horizontal plane, and includes a control unit including a memory unit that stores a type of cleaning processing of the substrate and a discharge port of the second gas nozzle The control unit reads the height of the ejection opening of the second gas nozzle corresponding to the type of the cleaning process selected from the plurality of types of cleaning processing from the memory unit, in accordance with the data corresponding to the height of the substrate, The lifting mechanism outputs a control signal. The substrate cleaning apparatus of claim 6, wherein the gas ejection direction of the second gas nozzle is 45 degrees ± 5 degrees with respect to a horizontal plane. A substrate cleaning apparatus for cleaning a substrate by using a cleaning liquid and a gas while rotating the substrate, comprising: a substrate holding portion that horizontally holds the substrate; and a rotating mechanism that rotates the substrate holding portion about a vertical axis; the first nozzle moves The cleaning nozzle for supplying the cleaning liquid to the substrate held by the substrate holding portion and the gas nozzle for spraying the gas are held, and the second nozzle moving portion is for ejecting the substrate held by the substrate holding portion. The gas nozzle of the gas is held, and is separately provided from the first nozzle moving portion; and the control unit outputs a control signal, and the following steps are performed: The cleaning liquid nozzle ejects the cleaning liquid from the center of the substrate; then, the first nozzle moving portion is moved, and the gas nozzle from the first nozzle moving portion ejects gas to the center portion; and then, the ejection position of the cleaning liquid nozzle a state in which the discharge position of the gas nozzle of the first nozzle moving portion is located on the peripheral side of the substrate, and the first nozzle moving portion is moved toward the peripheral edge side of the substrate while the cleaning liquid is ejected from the gas nozzle. The gas is ejected from the gas nozzle of the second nozzle moving portion, and the first nozzle moving portion and the second nozzle moving portion are moved toward the peripheral edge of the substrate while the cleaning liquid is ejected from the cleaning liquid nozzle, and the two nozzle moving portions are controlled. The moving speed, if the distance from the ejection position of the cleaning liquid nozzle to the center of the substrate is L1, and the distance from the ejection position of the gas nozzle of the second nozzle moving portion to the center of the substrate is L2, When the gas nozzle of the nozzle moving portion ejects gas, L2 < L1; and as the first nozzle moving portion and the second nozzle moving portion move toward the peripheral edge side of the substrate, the difference between L1 and L2 is gradually reduced. . The substrate cleaning apparatus of claim 8, wherein the other gas nozzle is disposed at a position where the movement path of the gas nozzle held by the first nozzle moving portion is shifted. After moving from the center of the substrate toward the peripheral edge of the substrate, before the gas is ejected from the gas nozzle of the second nozzle moving portion, the gas is moved toward the peripheral edge of the substrate, and the gas is ejected from the ejection position of the other gas nozzle to the substrate. The distance from the center portion is shorter than the distance from the ejection position of the cleaning liquid nozzle to the center portion of the substrate. The substrate cleaning apparatus according to claim 9, wherein the gas discharge flow rate of the gas in the other gas nozzle is set to be larger than a gas discharge flow rate of the gas nozzle held by the first nozzle moving portion. A substrate cleaning method for cleaning a substrate by using a cleaning liquid and a gas while rotating the substrate, comprising the steps of: holding the substrate horizontally on the substrate holding portion; and rotating the substrate holding portion around the vertical axis (1) The cleaning liquid nozzle ejects the cleaning liquid to the center of the substrate; then, after the ejection position of the cleaning liquid is moved toward the peripheral side of the substrate, the gas is ejected from the gas nozzle toward the center of the substrate; The nozzle and the gas nozzle respectively eject the cleaning liquid and the gas, and move the respective ejection positions of the first cleaning liquid nozzle and the gas nozzle toward the peripheral edge side of the substrate; and secondly, switch the ejection of the cleaning liquid from the first cleaning liquid nozzle to The second cleaning liquid nozzle ejects the cleaning liquid from the second cleaning liquid nozzle and ejects the gas from the gas nozzle, and moves the respective ejection positions of the second cleaning liquid nozzle and the gas nozzle toward the peripheral edge side of the substrate; The ejection position of the cleaning liquid nozzle is set at a position shifted from the ejection position of the first cleaning liquid nozzle, and is removed from the second cleaning. The distance from the ejection position of the liquid nozzle to the center of the substrate is d2, and the distance from the ejection position of the gas nozzle to the center of the substrate is d3, and d3 < d2 when the cleaning liquid is ejected from the second cleaning liquid nozzle, and 2 The cleaning liquid nozzle moves toward the peripheral side of the substrate, and the difference between d2 and d3 gradually decreases. The substrate cleaning method according to claim 11, wherein the first cleaning liquid nozzle, the second cleaning liquid nozzle, and the gas nozzle are provided in a common nozzle moving portion. The substrate cleaning method according to claim 11, wherein a nozzle moving portion of at least one of the first cleaning liquid nozzle, the second cleaning liquid nozzle, and the gas nozzle is provided, and a nozzle moving portion provided with another nozzle Individually moved independently. The substrate cleaning method according to claim 11, wherein the gas nozzle includes: a first gas nozzle used to eject gas at a center portion of the substrate; and a second gas nozzle disposed at a movement of the first gas nozzle When the trajectory is displaced, the cleaning liquid is ejected from the second cleaning liquid nozzle, and the respective ejection positions of the cleaning liquid and the gas are moved toward the peripheral side of the substrate. The substrate cleaning method according to claim 14, wherein the gas ejection flow rate of the second gas nozzle is set to be larger than a discharge flow rate of the gas of the first gas nozzle. The substrate cleaning method according to claim 11, wherein the substrate held by the substrate holding portion is exposed by a photoresist film having a contact angle of water of 65 degrees or more, and thereafter subjected to a substrate to which a developer is supplied. . A substrate cleaning method for cleaning a substrate by using a cleaning liquid and a gas while rotating the substrate, wherein the first nozzle moving portion holds the cleaning liquid nozzle for supplying the cleaning liquid to the substrate and the gas nozzle for spraying the gas; And the second nozzle moving portion holds the gas nozzle for spraying the substrate gas, and is separately provided from the first nozzle moving portion; the substrate cleaning method includes the following procedure: holding the substrate horizontally on the substrate holding portion; The holding portion rotates around the vertical axis, and the cleaning liquid is ejected from the center of the substrate from the cleaning liquid nozzle; then, the first nozzle moving portion is moved, and the gas nozzle from the first nozzle moving portion ejects gas to the center portion; Then, when the ejection position of the cleaning liquid nozzle is located on the peripheral side of the substrate from the ejection position of the gas nozzle of the first nozzle moving portion, the cleaning liquid is ejected and the gas is ejected from the gas nozzle, and the first nozzle moving portion is moved toward the first nozzle moving portion. Moving on the peripheral side of the substrate; and secondly, spraying gas from the gas nozzle of the second nozzle moving portion and spraying from the cleaning liquid When the cleaning liquid is ejected, the first nozzle moving portion and the second nozzle moving portion are moved toward the peripheral edge side of the substrate, and the moving speed of the two nozzle moving portions is controlled, and the distance from the ejection position of the cleaning liquid nozzle to the center portion of the substrate is controlled. In the case of L1, the distance from the ejection position of the gas nozzle of the second nozzle moving portion to the center portion of the substrate is L2, and L2 < L1 when the gas is ejected from the gas nozzle of the second nozzle moving portion, and the first nozzle The moving portion and the second nozzle moving portion move toward the peripheral edge side of the substrate, and the difference between L1 and L2 gradually decreases. Such as the substrate cleaning method of claim 17 of the patent application, wherein Another gas nozzle is disposed at a position at which the movement trajectory of the gas nozzle held by the first nozzle moving portion is deviated, and the substrate cleaning method further includes a program from the ejection position of the other gas nozzle from the center of the substrate After moving toward the peripheral side of the substrate, the first nozzle moving portion is moved toward the peripheral edge side of the substrate before the gas is ejected from the gas nozzle of the second nozzle moving portion, and the gas is ejected from the other gas nozzles. The distance from the ejection position of the other gas nozzle to the central portion of the substrate is shorter than the distance from the ejection position of the cleaning liquid nozzle to the central portion of the substrate. The substrate cleaning method according to claim 18, wherein the gas discharge flow rate of the gas in the other gas nozzle is set to be larger than a gas discharge flow rate of the gas nozzle held by the first nozzle moving portion. A non-transitory memory medium storing a program for operating on a computer of a substrate cleaning device for performing a substrate cleaning method for cleaning a substrate by using a cleaning liquid and a gas in a substrate cleaning device, the substrate cleaning method comprising The following procedure is: holding the substrate horizontally on the substrate holding portion; while rotating the substrate holding portion around the vertical axis, the cleaning liquid is ejected from the first cleaning liquid nozzle to the center portion of the substrate; and then the ejection position of the cleaning liquid is turned toward After moving on the peripheral side of the substrate, the gas is ejected from the gas nozzle toward the center of the substrate; Then, while the cleaning liquid and the gas are ejected from the first cleaning liquid nozzle and the gas nozzle, the respective ejection positions of the first cleaning liquid nozzle and the gas nozzle are moved toward the peripheral edge side of the substrate; and second, the cleaning liquid is ejected. When the first cleaning liquid nozzle is switched to the second cleaning liquid nozzle, the cleaning liquid is ejected from the second cleaning liquid nozzle, and the gas is ejected from the gas nozzle, and the respective ejection positions of the second cleaning liquid nozzle and the gas nozzle are directed toward the substrate. The peripheral side moves; and the ejection position of the second cleaning liquid nozzle is set at a position shifted from the ejection position of the first cleaning liquid nozzle to the center of the substrate from the ejection position of the second cleaning liquid nozzle When the distance is d2, the distance from the ejection position of the gas nozzle to the center of the substrate is d3, d3 < d2 when the cleaning liquid is ejected from the second cleaning liquid nozzle, and the second cleaning liquid nozzle moves toward the peripheral side of the substrate. The difference between d2 and d3 is gradually reduced.