WO2024014346A1

WO2024014346A1 - Substrate processing device, substrate processing method, and substrate processing program

Info

Publication number: WO2024014346A1
Application number: PCT/JP2023/024685
Authority: WO
Inventors: 涼末政; 和久大村
Original assignee: 東京エレクトロン株式会社
Priority date: 2022-07-14
Filing date: 2023-07-03
Publication date: 2024-01-18

Abstract

A substrate processing device that processes a substrate, comprising: a retaining/rotating part that retains and rotates the substrate; a supply unit including at least one gas nozzle that supplies an inert gas to the substrate after a developing solution is supplied thereto, and at least one rinse nozzle that supplies a rinse solution to the substrate at a discharge position that is provided closer to the outer peripheral side than the position where gas is supplied by the gas nozzle; and a control unit, the control unit causing the discharge position of the rinse solution from the rinse nozzle to move from the center of the substrate toward the outer periphery of the substrate while maintaining the discharging of the inert gas from the gas nozzle, thereby causing a gas/liquid interface formed by the inert gas and the rinse solution to move from the center toward the outer periphery, and switching the direction of the rinse solution discharged from the rinse nozzle from a direction that follows the rotation direction of the substrate to a direction that follows the radial direction of the substrate when moving the rinse nozzle from the center of the substrate toward the outer periphery thereof.

Description

Substrate processing equipment, substrate processing method, and substrate processing program

The present disclosure relates to a substrate processing apparatus, a substrate processing method, and a substrate processing program.

In Patent Document 1, when cleaning the surface of a substrate while discharging cleaning liquid and nitrogen gas, the distance from the discharge position of the cleaning liquid nozzle to the center of the substrate and the distance from the discharge position of the gas nozzle to the center of the substrate are determined. A configuration is shown in which the nozzle is moved so that the difference with the distance becomes smaller.

Japanese Patent Application Publication No. 2015-008273

The present disclosure provides a technique that can reduce residue on the surface of a substrate after cleaning the substrate.

A substrate processing apparatus according to an embodiment of the present disclosure is a substrate processing apparatus that processes a substrate, and includes a holding and rotating section that holds and rotates the substrate, and a holding and rotating section that holds and rotates the substrate, and a substrate processing apparatus that processes a substrate. a supply unit including at least one gas nozzle that supplies an active gas; and at least one rinsing nozzle that supplies a rinsing liquid to the substrate at a discharge position provided on an outer peripheral side of a gas supply position by the gas nozzle; , a control unit, the control unit moving the discharge position of the rinse liquid from the rinse nozzle from the center of the substrate toward the outer circumference while continuing discharge of the inert gas from the gas nozzle. By moving the gas-liquid interface formed by the inert gas and the rinsing liquid from the center to the outer circumferential direction, when the rinse nozzle moves in the outer circumferential direction, the gas-liquid interface formed by the inert gas and the rinsing liquid is The direction of the rinsing liquid is switched from a direction along the rotational direction of the substrate to a direction along the radial direction of the substrate when going from the center side to the outer peripheral side of the substrate.

According to the present disclosure, a technique is provided that can reduce residue on the surface of a substrate after cleaning the substrate.

FIG. 1 is a schematic diagram showing an example of a substrate processing system. FIG. 2 is a schematic diagram showing an example of a coating and developing device. FIG. 3 is a schematic diagram showing an example of a developing unit. FIGS. 4(a) to 4(c) are schematic diagrams showing an example of the arrangement of the gas nozzle and rinse nozzle of the developing unit. FIG. 5 is a block diagram showing an example of the hardware configuration of the control device. FIG. 6 is a flow diagram showing an example of a substrate processing procedure. FIG. 7 is a flow diagram illustrating an example of a rinsing liquid removal procedure. FIGS. 8(a) to 8(d) are schematic diagrams showing an example of a procedure for removing the rinse liquid. FIG. 9 is a flow diagram illustrating an example of a rinsing liquid removal procedure. FIGS. 10(a) to 10(d) are schematic diagrams showing an example of a rinse liquid removal procedure. FIG. 11 is a flow diagram illustrating an example of a rinsing liquid removal procedure. FIGS. 12(a) to 12(d) are schematic diagrams showing an example of a rinse liquid removal procedure.

Various exemplary embodiments will be described below.

A substrate processing apparatus according to an embodiment of the present disclosure is a substrate processing apparatus that processes a substrate, and includes a holding and rotating section that holds and rotates the substrate, and a holding and rotating section that holds and rotates the substrate, and a substrate processing apparatus that processes a substrate. a supply unit including at least one gas nozzle that supplies an active gas; and at least one rinsing nozzle that supplies a rinsing liquid to the substrate at a discharge position provided on an outer peripheral side of a gas supply position by the gas nozzle; , a control unit, the control unit moving the discharge position of the rinse liquid from the rinse nozzle from the center of the substrate toward the outer circumference while continuing discharge of the inert gas from the gas nozzle. By moving the gas-liquid interface formed by the inert gas and the rinsing liquid from the center toward the outer periphery, when moving the rinsing nozzle from the center side to the outer periphery side of the substrate, The direction of the rinsing liquid discharged from the rinsing nozzle is switched from a direction along the rotational direction of the substrate to a direction along the radial direction of the substrate.

In the above-mentioned substrate processing apparatus, the rinsing liquid is discharged from the rinse nozzle from the center of the substrate toward the outer circumference while continuing to discharge inert gas from the gas nozzle to the substrate after the developer has been supplied. By moving this, the gas-liquid interface formed by the inert gas and the rinsing liquid is moved from the center toward the outer periphery. At this time, when the rinse nozzle moves from the center side of the substrate to the outer circumference side, the direction of the rinse liquid discharged from the rinse nozzle changes from the direction along the rotation direction of the substrate to the direction along the radial direction of the substrate. Can be switched. On the center side of the substrate, when forming a gas-liquid interface, the discharge direction of the rinsing liquid from the rinsing nozzle is along the rotational direction of the substrate, thereby suppressing the generation of residue after the rinsing liquid is removed. . On the other hand, on the outer peripheral side of the substrate, the discharge direction of the rinsing liquid from the rinsing nozzle is along the radial direction of the substrate, thereby suppressing the generation of residue after the rinsing liquid is removed. Therefore, by switching to the discharge direction of the rinsing liquid as described above when moving the gas-liquid interface toward the outer circumference, it is possible to reduce the amount of residue on the substrate surface after cleaning the substrate.

The supply unit includes a first arm provided with a first rinse nozzle and a first gas nozzle, and a second arm provided with a second rinse nozzle and a second gas nozzle, and discharges from the first rinse nozzle. The direction of the rinsing liquid discharged from the second rinsing nozzle is along the rotational direction of the substrate, and the direction of the rinsing liquid discharged from the second rinsing nozzle is along the radial direction of the substrate. is from a first state in which the gas-liquid interface is formed by supplying the inert gas and the rinsing liquid while moving the first arm closer to the center of the substrate than a predetermined switching position; The method may be switched to a second state in which the gas-liquid interface is formed by supplying the inert gas and the rinsing liquid while moving the second arm closer to the outer periphery of the substrate than the switching position. good.

With the above configuration, on the center side of the substrate, the inert gas and the rinsing liquid are supplied from the first arm whose discharge direction of the rinsing liquid from the first rinsing nozzle is along the rotational direction of the substrate. By forming a gas-liquid interface, the generation of residue after the rinsing liquid is removed is suppressed. On the other hand, on the outer peripheral side of the substrate, an air-liquid interface is formed by supplying inert gas and rinsing liquid from the second arm, in which the direction of discharge of the rinsing liquid from the second rinsing nozzle is along the radial direction of the substrate. By doing so, the generation of residue after the rinsing liquid is removed is suppressed. Therefore, with the above configuration, it is possible to reduce the amount of residue on the surface of the substrate after cleaning the substrate.

The control unit causes the second rinse nozzle to also discharge the rinse liquid in the first state, and stops discharge of the rinse liquid from the first rinse nozzle in the second state, and The aspect may be such that the amount of the rinsing liquid discharged from the second rinsing nozzle is increased compared to the first state.

With the above configuration, in the first state, the rinsing liquid is also discharged from the second rinsing nozzle, thereby promoting the movement of the rinsing liquid from near the center of the substrate toward the outer circumference. On the other hand, in the second state, the discharge of the rinse liquid from the first rinse nozzle is stopped, so by increasing the discharge amount of the rinse liquid from the second rinse nozzle, the movement of the rinse liquid in the outer circumferential direction is prevented. It can be promoted.

The control unit may be configured to stop discharging the gas from the first gas nozzle in the second state.

With the above configuration, the flow of gas on the substrate surface in the second state is stabilized, and disturbances at the gas-liquid interface can be prevented.

The distance between the discharge position of the rinse liquid from the first rinse nozzle in the first arm and the discharge position of the gas from the first gas nozzle is the distance between the discharge position of the rinse liquid from the second rinse nozzle in the second arm. The distance between the discharge position of the gas and the discharge position of the gas from the second gas nozzle may be smaller than the distance between the gas discharge position and the discharge position of the gas from the second gas nozzle.

When forming a gas-liquid interface on a substrate, residue can be suppressed by having the rinsing liquid discharge position closer to the gas discharge position on the center side of the substrate, and closer to the rinsing liquid discharge position on the outer periphery of the substrate. Residue can be suppressed if the gas discharge position is separated from the gas discharge position. As mentioned above, the residue after cleaning can be further reduced by arranging the nozzles so that the discharge positions are close to each other in the first arm, and by arranging the nozzles so that the discharge positions are far from each other in the second arm. I can do it.

In the supply unit, a gas nozzle, a first rinse nozzle, and a second rinse nozzle are provided on an arm that is movable independently of each other, and the direction of the rinse liquid discharged from the first rinse nozzle is The direction is along the rotational direction of the substrate, the direction of the rinsing liquid discharged from the second rinsing nozzle is the direction along the radial direction of the substrate, and the control section From the first state in which the air-liquid interface is formed by supplying the rinsing liquid from the first rinsing nozzle on the center side of the substrate, the second rinsing liquid is applied on the outer peripheral side of the substrate from the switching position. Switching to a second state in which the gas-liquid interface is formed by supplying the rinsing liquid from the nozzle, and also causing the rinsing nozzle to move in the outer circumferential direction in the first state and the second state. The gas nozzle may be moved in the outer circumferential direction accordingly.

With the above configuration, on the center side of the substrate, the rinsing liquid is supplied from the first rinsing nozzle whose discharge direction is along the rotational direction of the substrate to form a gas-liquid interface. The generation of residue after the rinse solution is removed is suppressed. On the other hand, on the outer peripheral side of the substrate, by supplying the rinsing liquid from the second rinsing nozzle whose discharge direction is along the radial direction of the substrate and forming a gas-liquid interface, the residue after the rinsing liquid is removed is removed. The occurrence of is suppressed. Therefore, with the above configuration, it is possible to reduce the amount of residue on the surface of the substrate after cleaning the substrate.

The distance between the discharge position of the rinsing liquid from the first rinse nozzle on the substrate in the first state and the discharge position of the gas from the gas nozzle on the substrate in the second state is The distance may be smaller than the distance between the discharge position of the rinse liquid from the second rinse nozzle and the discharge position of the gas from the gas nozzle.

When forming a gas-liquid interface on a substrate, residue can be suppressed by having the rinsing liquid discharge position closer to the gas discharge position on the center side of the substrate, and closer to the rinsing liquid discharge position on the outer periphery of the substrate. Residue can be suppressed if the gas discharge position is separated from the gas discharge position. As described above, in the first state, the nozzle is arranged so that the gas liquid and rinsing liquid discharge positions are close to each other, and in the second state, the nozzle is arranged so that these discharge positions are far apart. By doing so, it is possible to further reduce the residue after washing.

The supply unit includes a first gas nozzle whose discharge position is fixed at the center of the substrate, a first arm provided with a first rinse nozzle, and a second arm provided with a second rinse nozzle and a second gas nozzle. , the direction of the rinse liquid discharged from the first rinse nozzle is along the rotation direction of the substrate, and the direction of the rinse liquid discharged from the second rinse nozzle is along the rotation direction of the substrate. The direction is along the radial direction, and the control unit moves the first arm while supplying inert gas from the first gas nozzle closer to the center of the substrate than a predetermined switching position. From the first state in which the gas-liquid interface is formed by supplying the rinsing liquid from the rinsing nozzle, the second arm is moved to the outer peripheral side of the substrate from the switching position, and the inert gas is The state may be changed to a second state in which the gas-liquid interface is formed by supplying the rinsing liquid.

With the above configuration, on the center side of the substrate, the rinsing liquid is supplied from the first rinsing nozzle whose discharge direction is along the rotational direction of the substrate, and the discharge position is fixed at the center of the substrate. By forming a gas-liquid interface with the first gas nozzle, the generation of residue after the rinse liquid is removed is suppressed. On the other hand, on the outer peripheral side of the substrate, an air-liquid interface is formed by supplying inert gas and rinsing liquid from the second arm, in which the direction of discharge of the rinsing liquid from the second rinsing nozzle is along the radial direction of the substrate. By doing so, the generation of residue after the rinsing liquid is removed is suppressed. Therefore, with the above configuration, it is possible to reduce the amount of residue on the surface of the substrate after cleaning the substrate.

The distance between the discharge position of the rinsing liquid from the first rinse nozzle on the substrate in the first state and the discharge position of the gas from the gas nozzle on the substrate in the second state is The distance may be smaller than the distance between the discharge position of the rinse liquid from the second rinse nozzle and the discharge position of the gas from the second gas nozzle.

The supply unit includes a first gas nozzle whose discharge position is fixed at the center of the substrate, and a first arm provided with a first rinse nozzle that can change the direction of the rinse liquid to be discharged. , the control unit may change the direction of the rinsing liquid discharged from the first rinsing nozzle from a direction along the rotation direction of the substrate to a direction along the rotation direction of the substrate when the first rinsing nozzle moves in the outer circumferential direction. It may also be an aspect in which the temperature is gradually changed in a direction along the radial direction.

With the above configuration, on the center side of the substrate, the rinsing liquid is supplied with the rinsing liquid ejected from the rinsing nozzle in the direction along the rotational direction of the substrate to form a gas-liquid interface. Generation of residue after removal is suppressed. On the other hand, on the outer circumferential side of the substrate, the rinsing liquid is supplied from the rinsing nozzle with the discharge direction along the radial direction of the substrate to form a gas-liquid interface, thereby preventing the generation of residue after the rinsing liquid is removed. is suppressed. Therefore, with the above configuration, it is possible to reduce the amount of residue on the surface of the substrate after cleaning the substrate.

A substrate processing method according to an embodiment of the present disclosure is a substrate processing method for processing a substrate, which includes holding and rotating the substrate in a holding rotation unit, and treating the substrate after a developer is supplied. a rinsing liquid discharge position from a rinsing nozzle that supplies the rinsing liquid to the substrate at a discharge position provided on the outer peripheral side of the gas supply position by the gas nozzle while continuing to discharge inert gas from the gas nozzle; moving a gas-liquid interface formed by the inert gas and the rinsing liquid from the center to the outer circumference of the substrate by moving the gas-liquid interface from the center to the outer circumference. When the rinsing nozzle is moved from the center side of the substrate to the outer circumferential side of the substrate, the direction of the rinsing liquid discharged from the rinsing nozzle is changed from a direction along the rotational direction of the substrate to a radial direction of the substrate. Switch in the direction along.

In the above substrate processing method, when the rinsing nozzle is moved from the center side of the substrate to the outer periphery side, the direction of the rinsing liquid discharged from the rinsing nozzle is changed from the direction along the rotational direction of the substrate to the radial direction of the substrate. You can switch in the same direction. On the center side of the substrate, when forming a gas-liquid interface, the discharge direction of the rinsing liquid from the rinsing nozzle is along the rotational direction of the substrate, thereby suppressing the generation of residue after the rinsing liquid is removed. . On the other hand, on the outer peripheral side of the substrate, the discharge direction of the rinsing liquid from the rinsing nozzle is along the radial direction of the substrate, thereby suppressing the generation of residue after the rinsing liquid is removed. Therefore, by switching to the discharge direction of the rinsing liquid as described above when moving the gas-liquid interface toward the outer circumference, it is possible to reduce the amount of residue on the substrate surface after cleaning the substrate.

A substrate processing program according to an embodiment of the present disclosure is a substrate processing program that causes a computer to perform substrate processing, and includes holding and rotating the substrate in a holding/rotating unit, and holding and rotating the substrate after a developer is supplied. A rinsing liquid from a rinsing nozzle that supplies the rinsing liquid to the substrate at a discharge position provided on the outer peripheral side from a gas supply position by the gas nozzle while continuing to discharge inert gas from the gas nozzle to the substrate. moving a gas-liquid interface formed by the inert gas and the rinsing liquid from the center to the outer circumference by moving the discharge position of the substrate from the center to the outer circumference; In the movement, when the rinse nozzle is moved from the center side to the outer peripheral side of the substrate, the direction of the rinse liquid discharged from the rinse nozzle is set along the rotation direction of the substrate. direction to a direction along the radial direction of the substrate.

According to the above substrate processing program, as with the substrate processing method, it is possible to reduce the residue on the substrate surface after cleaning the substrate.

[Exemplary Embodiment]
Various exemplary embodiments will be described in detail below with reference to the drawings. In addition, the same reference numerals are given to the same or corresponding parts in each drawing.

[Substrate processing system]
A substrate processing system 1 (substrate processing apparatus) shown in FIG. 1 is a system that forms a photosensitive film on a work W, exposes the photosensitive film, and develops the photosensitive film. The work W to be processed is, for example, a substrate, or a substrate on which a film, a circuit, or the like is formed by performing a predetermined process. The substrate is, for example, a silicon wafer. The work W (substrate) may be circular. The workpiece W may be a glass substrate, a mask substrate, an FPD (Flat Panel Display), or the like. The photosensitive film is, for example, a resist film.

As shown in FIGS. 1 and 2, the substrate processing system 1 includes a coating and developing device 2, an exposure device 3, and a control device 100. The exposure device 3 is a device that exposes a resist film (photosensitive film) formed on a workpiece W (substrate). Specifically, the exposure device 3 irradiates the portion of the resist film to be exposed with energy rays using a method such as immersion exposure. Energy rays are, for example, ionizing radiation or non-ionizing radiation. Ionizing radiation is radiation that has sufficient energy to ionize atoms or molecules. The ionizing radiation may be extreme ultraviolet (EUV), electron beam, ion beam, X-ray, alpha ray, beta ray, gamma ray, heavy particle beam, proton beam, or the like. Non-ionizing radiation is radiation that does not have sufficient energy to ionize atoms or molecules. The non-ionizing radiation may be g-line, i-line, KrF excimer laser, ArF excimer laser, F2 excimer laser, or the like.

The coating and developing device 2 performs a process of coating a resist (chemical solution) on the surface of the workpiece W to form a resist film before the exposure process by the exposure device 3. Further, the coating and developing device 2 develops the resist film formed on the workpiece W after the exposure process.

The coating and developing device 2 includes a carrier block 4, a processing block 5, and an interface block 6.

The carrier block 4 introduces the workpiece W into the coating and developing device 2 and extracts the workpiece W from the coating and developing device 2 . The carrier block 4 can support, for example, a plurality of carriers C for workpieces W, and has a built-in transport device A1 including a delivery arm. The carrier C accommodates a plurality of circular workpieces W, for example. The transport device A1 takes out the workpiece W from the carrier C, passes it to the processing block 5, receives the workpiece W from the processing block 5, and returns it into the carrier C. The processing block 5 has

processing modules

11, 12, 13, and 14.

The processing module 11 includes a liquid processing unit U1, a heat processing unit U2, and a transport device A3 that transports the workpiece W to these units. The processing module 11 forms a lower layer film on the surface of the workpiece W using the liquid processing unit U1 and the heat processing unit U2. The liquid processing unit U1 applies a processing liquid for forming a lower layer film onto the workpiece W. The heat treatment unit U2 performs various heat treatments associated with the formation of the lower layer film.

The processing module 12 includes a liquid processing unit U1, a heat processing unit U2, and a transport device A3 that transports the workpiece W to these units. The processing module 12 forms a resist film on the lower layer film using a liquid processing unit U1 and a heat processing unit U2. The liquid processing unit U1 applies a processing liquid for resist film formation onto the lower layer film. The liquid processing unit U1 applies, as a processing liquid for forming a resist film, a chemical liquid capable of forming a pattern by exposure to energy rays (for example, i-rays) onto the lower layer film. The heat treatment unit U2 performs various heat treatments associated with the formation of a resist film.

The processing module 13 includes a liquid processing unit U1, a heat processing unit U2, and a transport device A3 that transports the workpiece W to these units. The processing module 13 forms an upper layer film on the resist film using the liquid processing unit U1 and the heat processing unit U2. The liquid processing unit U1 applies a processing liquid for forming an upper layer film onto the resist film. The heat treatment unit U2 performs various heat treatments associated with the formation of the upper layer film.

The processing module 14 includes a developing unit U3, a heat treatment unit U4, a measuring unit U5, and a transport device A3 that transports the workpiece W to these units. The processing module 14 uses a developing unit U3 and a heat processing unit U4 to develop the resist film that has been subjected to the exposure process and performs heat treatment accompanying the development. The developing unit U3 is a unit that performs liquid processing on the workpiece W using a developer. The developing unit U3 forms a liquid film (paddle) of the developer on the surface of the workpiece W by supplying the developer onto the surface of the exposed workpiece W. The developing unit U3 develops the resist film by maintaining a liquid film of the developer on the surface of the work W (for example, statically developing). Furthermore, after performing development with the developer, the developing unit U3 washes away the developer on the surface of the workpiece W with a rinsing liquid, and removes the rinsing liquid remaining on the surface of the workpiece W.

The heat treatment unit U4 performs various heat treatments associated with development. Specific examples of heat treatment include heat treatment before development (PEB: Post Exposure Bake), post-development heat treatment (PB: Post Bake), and the like.

A shelf unit U10 is provided on the carrier block 4 side within the processing block 5. The shelf unit U10 is divided into a plurality of cells arranged in the vertical direction. A transport device A7 including a lifting arm is provided near the shelf unit U10. The transport device A7 moves the work W up and down between the cells of the shelf unit U10. A shelf unit U11 is provided within the processing block 5 on the interface block 6 side. The shelf unit U11 is divided into a plurality of cells arranged in the vertical direction.

The interface block 6 transfers the workpiece W to and from the exposure apparatus 3. The interface block 6 includes, for example, a transport device A8 including a delivery arm, and is connected to the exposure device 3. The transport device A8 transfers the work W placed on the shelf unit U11 to the exposure device 3. The transport device A8 receives the workpiece W from the exposure device 3 and returns it to the shelf unit U11.

The control device 100 (control unit) is configured to partially and entirely control the coating and developing device 2. The control device 100 controls the coating and developing device 2 to perform coating and developing processing, for example, in the following steps. First, the control device 100 controls the transport device A1 to transport the work W in the carrier C to the shelf unit U10, and controls the transport device A7 to place the work W in the cell for the processing module 11.

Next, the control device 100 controls the transport device A3 to transport the work W on the shelf unit U10 to the liquid processing unit U1 and the heat processing unit U2 in the processing module 11. Further, the control device 100 controls the liquid processing unit U1 and the heat processing unit U2 so as to form a lower layer film on the surface of the workpiece W. Thereafter, the control device 100 controls the transport device A3 to return the work W on which the lower layer film has been formed to the shelf unit U10, and controls the transport device A7 to place the work W in the cell for the processing module 12. .

Next, the control device 100 controls the transport device A3 to transport the work W on the shelf unit U10 to the liquid processing unit U1 and heat processing unit U2 in the processing module 12. Further, the control device 100 controls the liquid processing unit U1 and the heat processing unit U2 so as to form a resist film on the surface of the workpiece W. Thereafter, the control device 100 controls the transport device A3 to return the work W to the shelf unit U10, and controls the transport device A7 to place the work W in the cell for the processing module 13.

Next, the control device 100 controls the transport device A3 to transport the work W on the shelf unit U10 to each unit in the processing module 13. Further, the control device 100 controls the liquid processing unit U1 and the heat processing unit U2 so as to form an upper layer film on the resist film of the workpiece W. After that, the control device 100 controls the transport device A3 to transport the workpiece W to the shelf unit U11.

Next, the control device 100 controls the transport device A8 to send the work W on the shelf unit U11 to the exposure device 3. Thereafter, the control device 100 receives the workpiece W subjected to exposure processing using energy rays (for example, i-ray) from the exposure device 3, and controls the transporting device to place it in the cell for the processing module 14 in the shelf unit U11. Control A8.

Next, the control device 100 controls the transport device A3 to transport the workpiece W in the shelf unit U11 to each unit in the processing module 14, and controls the developing unit U3 and the heat processing unit to develop the resist film on the workpiece W. Controls unit U4. By developing the resist film, a resist pattern is formed on the surface of the workpiece W.

After that, the control device 100 controls the transport device A3 to return the work W to the shelf unit U10, and controls the transport device A7 and the transport device A1 to return the work W to the carrier C. With the above steps, the coating and developing process for one workpiece W is completed. The control device 100 causes the coating and developing device 2 to perform the coating and developing process on each of the subsequent plurality of works W in the same manner as described above.

An input/output device may be connected to the control device 100. The input/output device is a device for inputting input information indicating instructions from a user such as an operator into the control device 100, and outputting information from the control device 100 to the user. The input/output device may include a keyboard, an operation panel, or a mouse as an input device, and may include a monitor (for example, a liquid crystal display) as an output device.

The specific configuration of the substrate processing apparatus is not limited to the configuration of the substrate processing system 1 illustrated above. The substrate processing apparatus may be of any type as long as it includes a developing unit that performs development on a substrate on which a resist film is formed, and a control device that can control the developing unit.

(Developing unit)
The developing unit U3 of the processing module 14 will be described in detail with reference to FIGS. 3 and 4. For example, as shown in FIG. 3, the developing unit U3 includes a housing H, a holding rotation section 20, a developer supply section 30, a rinse liquid supply section 40 (supply section), and a gas supply section 50 (supply section). ), a cover member 70, and a blower B. The housing H accommodates the holding rotation unit 20, the developer supply unit 30, the rinsing liquid supply unit 40, the gas supply unit 50, the cover member 70, and the blower B.

The holding/rotating unit 20 (holding unit) holds and rotates the workpiece W. The holding/rotating unit 20 is capable of holding the workpiece W without rotating it, or holding the workpiece W while rotating it. The holding rotation section 20 includes, for example, a rotation drive section 22, a shaft 24, and a holding section 26. The rotation drive unit 22 operates based on an operation instruction from the control device 100 and rotates the shaft 24. The rotation drive unit 22 includes a power source such as an electric motor, for example.

The holding part 26 is provided at the tip of the shaft 24. A workpiece W is placed on the holding portion 26 . The holding portion 26 holds the workpiece W substantially horizontally, for example, by suction or the like. The holding/rotating unit 20 rotates the work W around an axis (rotation axis) perpendicular to the surface Wa of the work W while the work W is in a substantially horizontal posture. The holding part 26 may hold the workpiece W so that the rotation axis substantially coincides with the center CP of the workpiece W (see FIG. 4(a)).

The developer supply unit 30 supplies the developer L1 to the surface Wa of the workpiece W held by the holding and rotating unit 20 (holding unit 26). The developer L1 is a chemical solution for developing a resist film (hereinafter referred to as "resist film R") formed on the surface Wa of the workpiece W. In the present disclosure, supplying a fluid such as a liquid or a gas (e.g., developer L1) to the surface Wa of the workpiece W means that it is applied to a film such as a resist film R or a liquid film formed on the surface Wa. This corresponds to bringing the fluid into contact with each other.

The developer supply section 30 includes, for example, a liquid feeding section 32, a driving section 34, and a developing nozzle 36. Based on an operation instruction from the control device 100, the liquid feeding unit 32 sends the developer L1 stored in a container (not shown) to the developing nozzle 36 using a pump or the like (not shown). The drive unit 34 moves the developing nozzle 36 at least in the direction along the surface Wa of the workpiece W (horizontal direction) based on an operation instruction from the control device 100. The developing nozzle 36 is supported by an arm or the like (not shown). The drive unit 34 moves the developing nozzle 36 by moving the arm.

The developing nozzle 36 discharges the developing solution L1 supplied from the liquid feeding section 32 toward the surface Wa of the workpiece W. For example, when the developer L1 is discharged from the developing nozzle 36 toward the center of the workpiece W while the workpiece W is rotating, the developer L1 spreads over the surface Wa of the workpiece W using centrifugal force, and the developer L1 spreads over the surface Wa of the workpiece W. The developer L1 is supplied so as to cover the entire surface Wa. Note that the developing nozzle 36 may be configured to discharge the developing solution L1 while moving from the center of the workpiece W toward the outer periphery, for example.

The rinsing liquid supply section 40 supplies the rinsing liquid L2 to the peripheral area of the surface Wa of the workpiece W held by the holding and rotating section 20 (holding section 26). Water (for example, pure water) is used as the rinse liquid L2. The rinsing liquid supply section 40 includes a first rinsing liquid supply section 40A and a second rinsing liquid supply section 40B.

The first rinsing liquid supply section 40A includes, for example, a liquid feeding section 42A, a driving section 44A, and a rinsing nozzle 46A. Based on an operation instruction from the control device 100, the liquid sending unit 42A sends out the rinsing liquid L2 stored in a container (not shown) to the rinsing nozzle 46A using a pump or the like (not shown). The drive unit 44A moves the rinse nozzle 46A based on an operation instruction from the control device 100. The rinse nozzle 46A is supported by, for example, an arm 47A shown in FIG. 4. The drive unit 44A may move the rinse nozzle 46A by moving the arm 47A.

The rinse nozzle 46A is arranged above the surface Wa of the workpiece W. As shown in FIG. 4(a), the rinse nozzle 46A of the first rinse liquid supply section 40A extends in a direction along the rotational direction A of the work W in a plan view. Further, as shown in FIG. 4(c), the rinse nozzle 46A (extending direction of the rinse nozzle 46A) is inclined with respect to the surface Wa of the workpiece W in a side view. The angle of inclination of the rinse nozzle 46A with respect to the surface Wa is, for example, about 30° to 60°, and as an example, the angle of inclination is 45°. As a result, the rinse liquid L2 is discharged diagonally downward from the rinse nozzle 46A. The rinse nozzle 46A is arranged so that the discharged rinse liquid L2 is directed along the rotational direction A on the surface Wa of the workpiece W. That is, at the discharge position P1 where the rinse liquid L2 discharged from the rinse nozzle 46A contacts the surface Wa of the workpiece W, the discharge direction of the rinse liquid L2 is relative to the straight line connecting the discharge position P1 and the center CP of the workpiece W. The position of the rinse nozzle 46A is adjusted so that it is orthogonal to the rinsing nozzle 46A.

The drive unit 44A may move the rinse nozzle 46A along the direction in which a straight line connecting the discharge position P1 and the center CP of the workpiece W extends. At this time, the drive unit 44A may move the rinse nozzle 46A so that the discharge position P1 moves on one straight line extending from the center CP of the workpiece W.

The second rinsing liquid supply section 40B includes, for example, a liquid feeding section 42B, a driving section 44B, and a rinsing nozzle 46B. Based on an operation instruction from the control device 100, the liquid sending unit 42B sends out the rinsing liquid L2 stored in a container (not shown) to the rinsing nozzle 46B using a pump or the like (not shown). The drive unit 44B moves the rinse nozzle 46B based on an operation instruction from the control device 100. Rinse nozzle 46B is supported by arm 47B shown in FIG. The drive unit 44B may move the rinse nozzle 46B by moving the arm 47B.

The rinse nozzle 46B is arranged above the surface Wa of the workpiece W. As shown in FIG. 4(a), the rinse nozzle 46B of the second rinse liquid supply section 40B extends in the radial direction of the workpiece W in plan view, and has a discharge port facing outward from the workpiece W. I'm on my way. Further, as shown in FIG. 4(b), the rinse nozzle 46B (extending direction of the rinse nozzle 46B) is inclined with respect to the surface Wa of the work W in a side view. The angle of inclination of the rinse nozzle 46B with respect to the surface Wa is, for example, about 30° to 60°, and as an example, the angle of inclination is 45°. As a result, the rinse liquid L2 is discharged diagonally downward from the rinse nozzle 46B. The rinse nozzle 46B is arranged so that the discharged rinse liquid L2 is on the surface Wa of the workpiece W in the radial direction of the workpiece W. That is, at the discharge position P2 where the rinse liquid L2 discharged from the rinse nozzle 46B contacts the surface Wa of the workpiece W, the discharge direction of the rinse liquid L2 is along the straight line connecting the discharge position P2 and the center CP of the workpiece W. The position of the rinse nozzle 46B is adjusted so that it extends toward the outside of the workpiece W.

The drive unit 44B may move the rinse nozzle 46B along the direction in which a straight line connecting the discharge position P2 and the center CP of the workpiece W extends, that is, along the radial direction. At this time, the drive unit 44B moves the discharge position P2 on a straight line extending from the center CP of the workpiece W, and the rinse nozzle 46B itself moves on a straight line connecting the discharge position P2 and the center CP of the workpiece W. The rinse nozzle 46B may be moved so as to move the rinsing nozzle 46B.

The gas supply unit 50 supplies a predetermined gas to the surface Wa of the workpiece W. The gas supplied by the gas supply unit 50 (hereinafter referred to as "gas G") may be an inert gas, and is nitrogen gas in one example. Gas G is used to remove the rinsing liquid L2 from the surface Wa of the workpiece W. After the developer L1 present on the workpiece W is washed away with the rinsing liquid L2, the gas G is supplied to the center CP of the workpiece W, so that the surface Wa of the workpiece W is exposed at the center of the surface Wa of the workpiece W. A region is formed. A circumferential gas-liquid interface is formed around the area where the surface Wa is exposed. The gas-liquid interface corresponds to the boundary between the region where the rinse liquid L2 remains and the region where the surface Wa is exposed. By continuing to supply the gas G while rotating the workpiece W, the gas-liquid interface moves toward the outer periphery, that is, the area where the surface Wa is exposed becomes larger. By enlarging the exposed area of the surface Wa, the rinse liquid L2 is finally removed from the surface Wa. In this way, the gas G is used to remove the rinsing liquid L2 from the surface Wa of the workpiece W.

The gas supply section 50 includes, for example, a gas delivery section 52 and a gas nozzle 56. The gas delivery unit 52 sends gas G stored in a container (not shown) to a gas nozzle 56 using a pump or the like (not shown). The gas nozzle 56 may be arranged above the workpiece W, and may inject gas so as to spread in various directions (radially) as the distance from the gas nozzle 56 increases. The gas nozzle 56 may be formed with a plurality of ejection ports extending at different angles relative to the surface Wa of the workpiece W, for example. Gas nozzle 56 may be supported by arm 57 shown in FIG. At this time, the drive unit 54 may move the gas nozzle 56 by moving the arm 57. The gas nozzle 56 may be movable radially outward from the center CP of the workpiece W, for example.

Note that the gas nozzle 56 may be connected (fixed) to the rinse nozzle 46A or the rinse nozzle 46B. In this case, the drive unit 44A or 44B moves not only the rinse nozzle but also the gas nozzle 56 along the surface Wa.

The cover member 70 is provided around the holding and rotating section 20. The cover member 70 includes, for example, a cup body 72, a drain port 74, and an exhaust port 76. The cup body 72 functions as a liquid collection container that receives the developer L1 and the rinse liquid L2 supplied to the workpiece W for liquid processing. The liquid drain port 74 is provided at the bottom of the cup body 72, and discharges the liquid collected by the cup body 72 to the outside of the developing unit U3. The exhaust port 76 is provided at the bottom of the cup body 72.

The developing unit U3 has exhaust portions V1 and V2. The exhaust section V1 is provided at the lower part of the casing H, and discharges the gas inside the casing H by operating based on an operation instruction from the control device 100. The exhaust portion V1 may be, for example, a damper whose exhaust amount can be adjusted according to the degree of opening. The temperature, pressure, humidity, etc. within the housing H can be controlled by adjusting the amount of exhaust air from the housing H using the exhaust portion V1. The exhaust section V1 may be controlled to constantly exhaust the inside of the casing H during the liquid treatment on the workpiece W.

The exhaust part V2 is provided at the exhaust port 76, and discharges the gas in the cup body 72 by operating based on an operation instruction from the control device 100. The downflow flowing around the workpiece W is discharged to the outside of the housing H of the developing unit U3 through the exhaust port 76 and the exhaust portion V2. The exhaust portion V2 may be, for example, a damper whose exhaust amount can be adjusted according to the degree of opening. By adjusting the amount of exhaust air from the cup body 72 using the exhaust portion V2, the temperature, pressure, humidity, etc. inside the cup body 72 can be controlled.

The blower B is arranged above the holding rotation section 20 and the cover member 70 in the housing H of the developing unit U3. Blower B forms a downward flow toward cover member 70 based on an operation instruction from control device 100 . The blower B may be controlled to constantly form a downward flow during the liquid treatment on the workpiece W.

(Control device)
As shown in FIG. 2, the control device 100 has a storage unit 102 and a control unit 104 as functional configurations. The storage unit 102 stores a program for operating each part of the coating and developing device 2 including the developing unit U3. The storage unit 102 also stores various data (for example, information related to signals for operating the developing unit U3) and information from sensors provided in each part. The storage unit 102 is, for example, a semiconductor memory, an optical recording disk, a magnetic recording disk, or a magneto-optical recording disk. The program may also be included in an external storage device separate from the storage unit 102 or an intangible medium such as a propagation signal. The program may be installed in the storage unit 102 from these other media, and the program may be stored in the storage unit 102.

The control unit 104 controls the operation of each part of the coating and developing device 2 based on the program read from the storage unit 102. The control unit 104 at least holds and rotates the work W in the holding/rotating unit 20 and continues discharging inert gas from the gas nozzle to the work W after the developer has been supplied. By moving the discharge position of the rinse liquid from the rinse nozzle that supplies the rinse liquid to the workpiece W from the center of the workpiece W to the outer circumferential direction at a discharge position provided on the outer circumferential side than the gas supply position by It is configured to move the gas-liquid interface formed by the active gas and the rinsing liquid from the center toward the outer periphery.

The control device 100 is composed of one or more control computers. For example, the control device 100 includes a circuit 150 shown in FIG. Circuit 150 includes one or more processors 152, memory 154, storage 156, input/output ports 158, and timer 162. Storage 156 includes a computer-readable storage medium, such as a hard disk. The storage medium stores a program for causing the control device 100 to execute a substrate processing method to be described later. The storage medium may be a removable medium such as a nonvolatile semiconductor memory, a magnetic disk, or an optical disk. The memory 154 temporarily stores programs loaded from the storage medium of the storage 156 and the results of calculations by the processor 152.

The processor 152 cooperates with the memory 154 to execute the above program. The input/output port 158 is connected to the holding rotation section 20, the developer supply section 30, the rinsing solution supply section 40 (the first rinsing solution supply section 40A and the second rinsing solution supply section 40B), and the exhaust section according to instructions from the processor 152. Electric signals are input/output between V1, V2, blower B, etc. The timer 162 measures elapsed time, for example, by counting reference pulses of a constant period. Note that the hardware configuration of the control device 100 may include a dedicated logic circuit or an ASIC (Application Specific Integrated Circuit) that integrates the dedicated logic circuit.

[Substrate processing method]
Next, a series of processes executed by the control device 100 will be described as an example of a substrate processing method with reference to FIGS. 6 to 8. FIG. 6 is a flow diagram illustrating an overview of the liquid treatment performed on the workpiece W.

First, the control device 100 controls each part of the coating and developing device 2 to process the workpiece W in the processing modules 11 to 13, thereby forming a resist film R on the surface Wa of the workpiece W (step S01). Next, the control device 100 controls each part of the coating and developing device 2 to transport the work W from the processing module 13 to the exposure device 3 using the transport device A7 or the like. Next, a control device different from the control device 100 controls the exposure device 3 to cause the exposure device 3 to expose the resist film R formed on the surface Wa of the workpiece W in a predetermined pattern (step S02 ).

Next, the control device 100 controls each part of the coating and developing device 2 to transport the workpiece W from the exposure device 3 to the developing unit U3 of the processing module 14. Thereby, the workpiece W is held by the holding/rotating section 20 with the front surface Wa facing upward. Next, the control device 100 controls the developer supply section 30 of the development unit U3 to supply the developer L1 to the surface Wa of the workpiece W, that is, the upper surface of the resist film R (step S03).

In step S03, the control device 100 controls the developer supply unit 30 to move the developer nozzle 36 horizontally above the non-rotating workpiece W, and supplies the developer L1 from the developer nozzle 36 to the surface of the workpiece W. It may also be supplied towards Wa. Alternatively, the control device 100 may control the holding/rotating unit 20 and the developer supplying unit 30 to rotate the workpiece W by the holding/rotating unit 20 and move the developing nozzle 36 horizontally above the workpiece W while performing development. The developer L1 may be supplied from the nozzle 36 toward the surface Wa of the workpiece W. In this case, the developer L1 is supplied spirally from the center to the periphery of the workpiece W, or from the periphery to the center of the workpiece W. By step S03, a state is created in which the developer L1 stays so as to cover the entire upper surface of the resist film R on the front surface Wa of the workpiece W.

Next, the control device 100 controls the holding rotation unit 20 and the rinsing liquid supply unit 40 (the first rinsing liquid supply unit 40A and the second rinsing liquid supply unit 40B) to The rinsing liquid supply section 40 supplies the rinsing liquid L2 onto the upper surface of the liquid L1 (step S04). In step S04, the control device 100 may move the rinse nozzle 46A so that the discharge position P1 of the rinse liquid L2 by the rinse nozzle 46A of the first rinse liquid supply section 40A substantially coincides with the center CP of the workpiece W. . In this state, the rinsing liquid L2 is supplied from the rinsing nozzle 46A while rotating the workpiece W, thereby spreading the rinsing liquid L2 over the entire surface Wa of the workpiece W. Note that the control device 100 directs the rinsing liquid L2 from the rinsing nozzle 46A toward the surface Wa of the work W while rotating the work W by the holding/rotating unit 20 and moving the rinsing nozzle 46A horizontally above the work W. It may be supplied. Moreover, in step S04, the control device 100 may supply the rinse liquid L2 from both the rinse nozzle 46A of the first rinse liquid supply section 40A and the rinse nozzle 46B of the second rinse liquid supply section 40B.

Next, the control device 100 causes the gas supply section 50 to supply gas G from the gas nozzle 56 to the surface Wa of the rotating workpiece W, that is, to the upper surface of the rinsing liquid L2 remaining on the surface Wa, thereby removing the rinsing liquid L2. (Step S05). The control device 100 may move the gas nozzle 56 using the drive unit 54 so that the arrival position of the gas G2 substantially coincides with the center CP of the workpiece W at the time when the discharge of the gas G is started in step S05.

In step S05, the gas G is supplied from the gas nozzle 56, and the rinsing liquid L2 is continuously supplied from step S04. That is, the rinsing liquid L2 is removed from the surface Wa of the work W while simultaneously supplying the gas G and the rinsing liquid L2.

(Procedure for removing rinse liquid L2)
The procedure for removing the rinse liquid L2 in step S05 will be described with reference to FIGS. 7 and 8.

First, as shown in FIG. 7, the control device 100 starts (ON) the supply of gas G (nitrogen gas) from the gas nozzle 56 of the gas supply section 50. At the same time, the control device 100 supplies the rinsing liquid L2 from the rinsing nozzle 46A of the first rinsing liquid supply section 40A along the rotational direction of the workpiece W, and supplies the rinsing liquid L2 from the rinsing nozzle 46B of the second rinsing liquid supply section 40B to the workpiece W. The supply of the rinsing liquid L2 along the direction toward the outer periphery is started (ON) (step S11). At this time, the gas nozzle 56 is arranged to discharge the gas G at the center CP of the workpiece W, as shown in FIG. 8(a). Further, the rinse nozzle 46A that extends along the rotational direction and discharges the rinse liquid L2 in the rotational direction is arranged such that the discharge position P1 is located at a position spaced apart from the center CP by a distance r1 along the radial direction of the workpiece W. be done. The rinse nozzle 46B, which extends along the radial direction of the workpiece W and discharges the rinse liquid L2 in the outer peripheral direction along the radial direction, discharges the rinse liquid L2 at a position spaced apart from the center CP by a distance r2 along the radial direction of the workpiece W. It is arranged so that position P2 is located. By starting to discharge the gas G in this state, the rinsing liquid L2 is gradually removed from the center to form a dry core region D in which the surface Wa of the workpiece W is exposed, as shown in FIG. 8(a). Ru. Furthermore, a gas-liquid interface D0 is formed at the boundary between the region where the rinsing liquid L2 remains and the dry core region D. Note that the rinse nozzle 46A is arranged inside the rinse nozzle 46B. That is, the relationship r1<r2 holds. When the diameter of the workpiece W is 200 mm, the distance r1 may be set, for example, to 10 to 25 mm, and the distance r2 may be set to 20 mm to 50 mm. FIG. 8A schematically shows a state in which the distance r1 is set to 15 mm and the distance r2 is set to 30 mm.

In this state, the control device 100 controls the amount of rinsing liquid L2 discharged from the rinse nozzle 46B (the amount of discharge per unit time) with respect to the amount of rinsing liquid L2 discharged from the rinse nozzle 46A (the amount of discharge per unit time). ) is adjusted to reduce the discharge amount. As an example, the discharge amount of the rinse liquid L2 from the rinse nozzle 46A is adjusted to 350 ml/min, and the discharge amount of the rinse liquid L2 from the rinse nozzle 46B is adjusted to 100 ml/min. With such a discharge amount relationship, in the region of distance r1 to r2 from the center CP of the work W, the flow of the rinse liquid L2 in the spiral direction by the rinse liquid L2 from the rinse nozzle 46A discharged in the rotation direction is Become mainstream. Further, in a region on the outer circumferential side of the distance r2, the rinsing liquid L2 discharged in the outer circumferential direction from the rinsing nozzle 46B is added, thereby forming a flow of the rinsing liquid L2 further outward.

Next, the control device 100 moves the gas nozzle 56 and the rinse nozzle 46A toward the outer circumference while continuing to discharge the gas G and the rinse liquid L2 (step S12). FIG. 8B shows a state in which the gas nozzle 56 and the rinse nozzle 46A have been moved 15 mm toward the outer circumference of the workpiece W. By moving the rinse nozzle 46A in the outer circumferential direction, the area to which the rinse liquid L2 is supplied moves in the outer circumferential direction. Furthermore, by moving the gas nozzle 56, the region to which the gas G is supplied also moves toward the outer circumference. As a result, the gas-liquid interface D0, which is the boundary between the rinsing liquid L2 formed at the center of the workpiece W and the dry core region D, gradually moves toward the outer circumference. That is, as shown in FIG. 8(b), the dry core region D gradually expands from the center CP toward the outer periphery. Note that the rinse nozzle 46B does not move at this stage, so in the state shown in FIG. 8(b), both the rinse nozzle 46A, which has moved 15 mm toward the outer circumferential direction, and the rinse nozzle 46B are at a position 30 mm away from the center CP. There will be. That is, the rinse nozzle 46A has moved to the same outer peripheral position as the rinse nozzle 46B.

Next, the control device 100 stops (turns off) the discharge of the rinse liquid L2 from the rinse nozzle 46A (step S13). FIG. 8C schematically shows a state where the discharge of the rinse liquid L2 from the rinse nozzle 46A is stopped. At this stage, the control device 100 may increase the discharge amount of the rinse liquid L2 from the rinse nozzle 46B to the same extent as the discharge amount from the rinse nozzle 46A (for example, 350 ml/min). As a result, in a region on the outer circumferential side of the distance r2 from the center CP, a flow of the rinse liquid L2 toward the outer circumference is formed by the rinse liquid L2 discharged from the rinse nozzle 46B in the outer circumferential direction.

Next, the control device 100 moves the rinse nozzle 46B toward the outer circumference while continuing to discharge the gas G and the rinse liquid L2 (step S14). In the state shown in FIG. 8(c), the gas nozzle 56 has moved 15 mm from the center CP of the workpiece W in the outer circumferential direction. On the other hand, the discharge position P2 of the rinse nozzle 46B is 30 mm (distance r2) away from the center CP of the workpiece W in the outer circumferential direction. Therefore, the control device 100 performs rinsing until the difference between the distance between the discharge position of the gas G and the center CP of the workpiece W and the distance between the discharge position P2 of the rinsing liquid L2 and the center CP of the workpiece W becomes 30 mm. Only the nozzle 46B is moved. Here, by moving only the rinse nozzle 46B by 15 mm in the outer circumferential direction, the distance between the discharge position P2 of the rinse nozzle 46B and the discharge position of the gas G becomes 30 mm. As a result, the difference in distance from the center CP of the discharge position P2 of the rinse nozzle 46B and the discharge position of the gas G on the outer peripheral side of the workpiece W is the same as that of the discharge position P1 of the rinse nozzle 46A on the center side of the workpiece W. This is larger than the relationship with the gas G discharge position.

Next, the control device 100 moves the gas nozzle 56 and the rinse nozzle 46B toward the outer circumference while continuing to discharge the gas G and the rinse liquid L2 (step S15). FIG. 8(d) shows a state in which the gas nozzle 56 and the rinse nozzle 46B are moved toward the outer circumference of the workpiece W compared to the state shown in FIG. 8(c). From the state of step S14, the gas nozzle 56 and the rinse nozzle 46B are moved toward the outer circumference of the work W while maintaining the distances from the center CP of the discharge position P2 of the rinse nozzle 46B and the discharge position of the gas G on the work W. . At this time, by moving the rinse nozzle 46B in the outer circumferential direction, the area to which the rinse liquid L2 is supplied moves in the outer circumferential direction. Furthermore, by moving the gas nozzle 56, the region to which the gas G is supplied also moves toward the outer circumference. As a result, the gas-liquid interface D0 of the workpiece W further moves toward the outer circumference. That is, as shown in FIG. 8(d), the dry core region D further expands toward the outer periphery, and the only region where the rinsing liquid L2 remains is the outer periphery. From this state, when the control device 100 further moves the gas nozzle 56 and the rinse nozzle 46B in the outer circumferential direction, the gas G causes all of the rinse liquid L2 to be removed from the workpiece W along with the resist dissolved by the reaction with the developer L1. is removed from the surface Wa. As a result, the entire surface Wa of the workpiece W becomes a dry core region D, and a resist pattern formed by development appears.

Note that in the above procedure, there is a state in which the gas nozzle 56 and the rinse nozzle 46A move simultaneously, as shown in FIG. 8(b) and step S12. Therefore, the gas nozzle 56 and the rinse nozzle 46A may be configured to be integrally movable. In this case, when moving the gas nozzle 56 in the outer circumferential direction in step S14, the control device 100 may also move the rinse nozzle 46A, to which the supply of the rinse liquid L2 has been stopped, together with the gas nozzle 56 in the outer circumferential direction.

Furthermore, in the above procedure, only the rinse nozzle 46B is moved in step S14. This process calculates the difference in distance from the center CP of the discharge position P2 of the rinse nozzle 46B on the outer peripheral side of the workpiece W and the discharge position of the gas G by the gas nozzle 56 from the rinse nozzle 46A on the center side of the workpiece W. This is a process to make it larger than the relationship with the gas nozzle 56. On the outer circumferential side, the discharge position P2 of the rinsing liquid L2 along the radial direction of the workpiece W and the discharge position of the gas G are separated by a certain distance (the distance between the discharge position of the gas G and the center CP of the workpiece W and the rinsing liquid L2 It is better to increase the difference between the distance between the discharge position P2 and the center CP of the work W, so that the rinsing liquid L2 is splashed by the gas G discharged from the gas nozzle 56 and scattered onto the dry core region D (splash). The possibility of this occurring can be reduced. Therefore, as in step S14 above, the distance between the discharge position P2 of the rinsing liquid L2 and the discharge position of the gas G along the radial direction of the workpiece W is made larger on the outer peripheral side than on the center side of the workpiece W. This can prevent residues after processing from remaining on the surface Wa of the workpiece W.

On the other hand, on the center side of the workpiece W, if the distance between the discharge position of the rinsing liquid L2 and the discharge position of the gas G along the radial direction of the workpiece W is increased, the surface Wa of the workpiece W is exposed to the rinsing liquid L2 and the residue. Interference fringes may occur. Furthermore, it has been confirmed that when the rinse nozzle 46B is configured to discharge the rinse liquid L2 in the outer circumferential direction, splashing of the rinse liquid L2 due to the gas G is likely to occur near the center of the workpiece W. Therefore, a configuration is adopted in which the rinse nozzle 46A is used to discharge the rinse liquid L2 in a direction along the rotational direction of the workpiece W, and further, the discharge position P1 of the rinse liquid L2 along the radial direction of the workpiece W and the gas By reducing the distance from the discharge position of G to a certain extent, it is possible to move the gas-liquid interface D0 toward the outer circumference while suppressing interference fringes and splashing of the rinse liquid L2, which prevents residue from remaining after processing. is prevented.

Note that in the above procedure, the gas nozzle 56, the rinse nozzle 46A, and the rinse nozzle 46B move independently. Therefore, as shown in FIG. 4 etc., the three nozzles are supported by mutually different arms and are movable independently. However, as shown in FIG. 8B and step S12, there is a timing when the gas nozzle 56 and the rinse nozzle 46A move simultaneously. Therefore, the gas nozzle 56 and the rinse nozzle 46A may be configured to be integrally movable. In this case, when moving the gas nozzle 56 in the outer circumferential direction in step S14, the control device 100 may also move the rinse nozzle 46A, to which the supply of the rinse liquid L2 has been stopped, together with the gas nozzle 56 in the outer circumferential direction.

(Example of changing the procedure for removing rinse liquid L2-1)
In the above procedure, a case has been described in which three nozzles (gas nozzle 56, rinse nozzle 46A, and rinse nozzle 46B) are supported by mutually different arms. Therefore, after stopping the discharge of the rinse liquid L2 from the rinse nozzle 46A in step S13, there is a step in which only the rinse nozzle 46B is moved toward the outer circumference in step S14. That is, in step S14, the distance between the discharge position P2 of the rinse liquid L2 and the discharge position of the gas G along the radial direction of the workpiece W is adjusted to be large. In contrast, by preparing two gas nozzles and configuring one gas nozzle and one rinse nozzle to be attached to one arm, the discharge position of the rinse liquid L2 and the discharge position of the gas G can be adjusted from the beginning. Fix the positional relationship. When attempting to execute a procedure similar to the procedure shown in FIGS. 7 and 8 with such a configuration including two arms, it is possible to omit the step of moving only the rinse nozzle 46B as shown in step S14. Hereinafter, the specific procedure will be described as a first modification example with reference to FIGS. 9 and 10.

First, it is assumed that the supply section of the developing unit U3 has gas nozzles 56A and 56B (two gas nozzles). The gas nozzles 56A and 56B may each be connected to a gas delivery section, and gas G stored in the container may be supplied by a pump or the like.

As shown in FIG. 10(a), the gas nozzle 56A and the rinse nozzle 46A are supported by the first arm 61, and the gas nozzle 56B and the rinse nozzle 46B are supported by the second arm 62. At this time, the gas nozzles 56A and 56B are both arranged so as to be able to discharge the gas G to the center CP of the workpiece W. Although FIG. 10A shows an example in which the discharge ports of the gas nozzles 56A and 56B overlap in plan view, the arrangement of the two nozzles can be changed as appropriate. Further, the rinse nozzle 46A provided on the first arm 61 is arranged such that the discharge position P1 is located at a position spaced apart from the center CP by a distance r1 along the radial direction of the workpiece W. That is, in the first arm 61, the discharge position of the gas nozzle 56A and the discharge position P1 of the rinse nozzle 46A are arranged at a distance r1 along the radial direction of the workpiece W. On the other hand, the rinse nozzle 46B provided on the second arm 62 is arranged such that the discharge position P2 is located at a distance r2 from the center CP along the radial direction of the workpiece W. That is, in the second arm 62, the discharge position of the gas nozzle 56B and the discharge position P2 of the rinse nozzle 46B are arranged at a distance r2 along the radial direction of the workpiece W. On the premise of such a nozzle arrangement, the control device 100 executes the following procedure.

First, as shown in FIG. 9, the control device 100 starts (ON) the supply of gas G (nitrogen gas) from the gas nozzle 56A of the first arm 61 and the gas nozzle 56B of the second arm 62. At the same time, the control device 100 supplies the rinsing liquid L2 from the rinsing nozzle 46A of the first arm 61 along the rotational direction of the workpiece W, and from the rinsing nozzle 46B of the second arm 62 in the direction toward the outer periphery of the workpiece W. The supply of the rinsing liquid L2 is started (ON) (step S21). As shown in FIG. 10(a), the gas nozzles 56A and 56B are arranged so as to discharge the gas G at the center CP of the workpiece W. As shown in FIG. Further, the rinse nozzle 46A that extends along the rotational direction and discharges the rinse liquid L2 in the rotational direction is arranged such that the discharge position P1 is located at a position spaced apart from the center CP by a distance r1 along the radial direction of the workpiece W. be done. The rinse nozzle 46B, which extends along the radial direction of the workpiece W and discharges the rinse liquid L2 in the outer peripheral direction along the radial direction, discharges the rinse liquid L2 at a position spaced apart from the center CP by a distance r2 along the radial direction of the workpiece W. It is arranged so that position P2 is located. By starting to discharge the gas G in this state, a dry core region D is formed as shown in FIG. An interface D0 is formed.

In this state, the amount of rinsing liquid L2 discharged from the rinse nozzle 46B (the amount of discharge per unit time) is smaller than the amount of rinsing liquid L2 discharged from the rinse nozzle 46A (the amount of discharge per unit time). Adjust the discharge amount so that As an example, the discharge amount of the rinse liquid L2 from the rinse nozzle 46A is adjusted to 350 ml/min, and the discharge amount of the rinse liquid L2 from the rinse nozzle 46B is adjusted to 100 ml/min. With such a discharge amount relationship, in the region of distance r1 to r2 from the center CP of the work W, the flow of the rinse liquid L2 in the spiral direction by the rinse liquid L2 from the rinse nozzle 46A discharged in the rotation direction is Become mainstream. Further, in a region on the outer circumferential side of the distance r2, the rinsing liquid L2 discharged in the outer circumferential direction from the rinsing nozzle 46B is added, thereby forming a flow of the rinsing liquid L2 further outward.

Next, the control device 100 moves the first arm 61 in the outer circumferential direction while continuing to discharge the gas G and the rinsing liquid L2 (step S22). FIG. 10(b) shows a state in which the first arm 61 has been moved 15 mm toward the outer circumference of the workpiece W. By moving the first arm 61 to move the rinse nozzle 46A in the outer circumferential direction, the area to which the rinse liquid L2 is supplied moves in the outer circumferential direction. Furthermore, by moving the gas nozzle 56A, the region to which the gas G is supplied also moves toward the outer circumference. As a result, the gas-liquid interface D0, which is the boundary between the rinsing liquid L2 formed at the center of the workpiece W and the dry core region D, gradually moves toward the outer circumference. That is, as shown in FIG. 10(b), the dry core region D gradually expands from the center CP toward the outer periphery. Note that the gas nozzle 56B and rinse nozzle 46B of the second arm 62 do not move at this stage.

Next, the control device 100 stops (turns off) the discharge of the rinse liquid L2 from the rinse nozzle 46A (step S23). At this time, the discharge of gas G from the gas nozzle 56A may also be stopped. FIG. 10C schematically shows a state in which the discharge of the rinse liquid L2 from the rinse nozzle 46A and the discharge of the gas G from the gas nozzle 56A are stopped. At this stage, the discharge amount of the rinse liquid L2 from the rinse nozzle 46B is increased (UP) to the same extent as the discharge amount from the rinse nozzle 46A (for example, 350 ml/min). As a result, in a region on the outer circumferential side of the distance r2 from the center CP, a flow of the rinse liquid L2 toward the outer circumference is formed by the rinse liquid L2 discharged from the rinse nozzle 46B in the outer circumferential direction.

Next, the control device 100 moves the second arm 62 in the outer circumferential direction (step S24). FIG. 10(d) shows a state in which the second arm 62 (gas nozzle 56B and rinse nozzle 46B) is moved toward the outer circumference of the workpiece W, compared to the state shown in FIG. 10(c). At this time, by moving the rinse nozzle 46B and the gas nozzle 56B in the outer circumferential direction, the region to which the rinse liquid L2 is supplied and the region to which the gas G is supplied moves in the outer circumferential direction. As a result, the gas-liquid interface D0 of the workpiece W moves toward the outer circumference. That is, as shown in FIG. 10(d), the dry core region D further expands toward the outer periphery, and the only region in which the rinsing liquid L2 remains is the outer periphery. When the second arm 62 is further moved in the outer circumferential direction from this state, the gas G removes all of the rinse liquid L2 from the surface Wa of the workpiece W together with the resist dissolved by the reaction with the developer L1. . As a result, the entire surface Wa of the workpiece W becomes a dry core region D, and a resist pattern formed by development appears.

In this manner, in the procedure using the first arm 61 and the second arm 62, the gas nozzles 56A and 56B move following the movement of the rinse

nozzles

46A and 46B, respectively, so that the distance between the rinse nozzle and the gas nozzle is reduced. Distance is maintained. That is, the rinse nozzle can be moved in the outer circumferential direction while the discharge position of the rinse liquid L2 and the discharge position of the gas G are maintained in each of the first arm 61 and the second arm 62.

Note that in the procedure shown in FIG. 9, the gas nozzle and rinse nozzle involved in forming the gas-liquid interface D0 are replaced from the gas nozzle 56A and rinse nozzle 46A to the gas nozzle 56B and rinse nozzle 46B in step S23. At this time, if the amount of gas G discharged from the gas nozzle is greatly changed in a short period of time, liquid splashing may occur due to interference with the rinsing liquid L2. Therefore, the control device 100 may perform control to gradually change the discharge amount of the gas nozzles 56A, 56B.

(Example of changing the procedure for removing rinse liquid L2-2)
A second modification of the procedure for removing the rinse liquid L2 in step S05 will be described with reference to FIGS. 11 and 12. This modified example differs from the example described in FIGS. 7 and 8 in that the gas nozzle 56 does not move. Specifically, the gas nozzle 56 is fixed to the center CP of the workpiece W.

First, as shown in FIG. 11, the control device 100 starts (ON) the supply of gas G (nitrogen gas) from the gas nozzle 56 of the gas supply section 50. At the same time, the control device 100 supplies the rinsing liquid L2 from the rinsing nozzle 46A of the first rinsing liquid supply section 40A along the rotational direction of the workpiece W, and supplies the rinsing liquid L2 from the rinsing nozzle 46B of the second rinsing liquid supply section 40B to the workpiece W. The supply of the rinsing liquid L2 along the direction toward the outer periphery is started (ON) (step S31). At this time, the gas nozzle 56 is arranged so as to discharge the gas G at the center CP of the workpiece W, as shown in FIG. 12(a). Further, the rinse nozzle 46A that extends along the rotational direction and discharges the rinse liquid L2 in the rotational direction is arranged such that the discharge position P1 is located at a position spaced apart from the center CP by a distance r1 along the radial direction of the workpiece W. be done. The rinse nozzle 46B, which extends along the radial direction of the workpiece W and discharges the rinse liquid L2 in the outer peripheral direction along the radial direction, discharges the rinse liquid L2 at a position spaced apart from the center CP by a distance r2 along the radial direction of the workpiece W. It is arranged so that position P2 is located. By starting to discharge the gas G in this state, the rinsing liquid L2 is gradually removed from the center to form a dry core region D in which the surface Wa of the workpiece W is exposed, as shown in FIG. 12(a). Ru. Furthermore, a gas-liquid interface D0 is formed at the boundary between the region where the rinsing liquid L2 remains and the dry core region D. Note that the rinse nozzle 46A is arranged inside the rinse nozzle 46B. That is, the relationship r1<r2 holds. When the diameter of the workpiece W is 200 mm, the distance r1 may be set, for example, to 10 to 25 mm, and the distance r2 may be set to 20 mm to 50 mm. FIG. 12A schematically shows a state in which the distance r1 is set to 15 mm and the distance r2 is set to 30 mm.

Next, the control device 100 moves the rinse nozzle 46A toward the outer circumference while continuing to discharge the gas G and the rinse liquid L2 (step S32). FIG. 12(b) shows a state in which the rinse nozzle 46A has been moved 15 mm toward the outer circumference of the workpiece W. By moving the rinse nozzle 46A in the outer circumferential direction, the area to which the rinse liquid L2 is supplied moves in the outer circumferential direction. As a result, the gas-liquid interface D0, which is the boundary between the rinsing liquid L2 formed at the center of the workpiece W and the dry core region D, gradually moves toward the outer periphery. That is, as shown in FIG. 12(b), the dry core region D gradually expands from the center CP to the outer peripheral side. Even if the gas nozzle 56 does not move, by moving the discharge position of the rinse liquid L2 from the rinse nozzle 46A toward the outer circumference, the gas-liquid interface D0 also moves toward the outer circumference.

Next, the control device 100 stops (turns off) the discharge of the rinse liquid L2 from the rinse nozzle 46A (step S33). FIG. 12C schematically shows a state where the discharge of the rinse liquid L2 from the rinse nozzle 46A is stopped. At this stage, the control device 100 may increase the discharge amount of the rinse liquid L2 from the rinse nozzle 46B to the same extent as the discharge amount from the rinse nozzle 46A (for example, 350 ml/min). As a result, in a region on the outer circumferential side of the distance r2 from the center CP, a flow of the rinse liquid L2 toward the outer circumference is formed by the rinse liquid L2 discharged from the rinse nozzle 46B in the outer circumferential direction.

Next, the control device 100 moves the rinse nozzle 46B toward the outer circumference while continuing to discharge the gas G and the rinse liquid L2 (step S34). FIG. 12(d) shows a state in which the rinse nozzle 46B is moved toward the outer circumference of the workpiece W compared to the state shown in FIG. 12(c). By moving the rinse nozzle 46B in the outer circumferential direction, the area to which the rinse liquid L2 is supplied moves in the outer circumferential direction. As a result, the gas-liquid interface D0 of the workpiece W further moves toward the outer circumference. That is, as shown in FIG. 12(d), the dry core region D further expands toward the outer periphery, and the only region where the rinsing liquid L2 remains is the outer periphery. When the rinse nozzle 46B is further moved in the outer circumferential direction from this state, the gas G removes all of the rinse liquid L2 from the surface Wa of the workpiece W together with the resist dissolved by the reaction with the developer L1. As a result, the entire surface Wa of the workpiece W becomes a dry core region D, and a resist pattern formed by development appears.

Note that in the procedure according to the second modified example shown in FIGS. 11 and 12, the gas nozzle 56, the rinse nozzle 46A, and the rinse nozzle 46B basically operate independently. Therefore, fine control may be possible by operating these nozzles individually.

Furthermore, in the above procedure, when the rinse nozzle 46B moves outward while discharging the rinse liquid L2 only from the rinse nozzle 46B in step S34, the distance from the gas nozzle 56 fixed at the center gradually increases. As the distance from the gas nozzle 56 increases, it becomes gradually difficult to expand the dry core region D by the gas G discharged from the gas nozzle 56, and the gas-liquid interface D0 may be disturbed. Therefore, the control device 100 may increase the amount of gas G discharged from the gas nozzle 56 as the distance between the gas nozzle 56 and the rinse nozzle 46 increases. Further, similarly to the first modification example shown in FIGS. 9 and 10, the supply section of the developing unit U3 is provided with a second gas nozzle that is movable integrally with the rinse nozzle 46B, and these are integrated into one arm. It may also have a configuration in which it operates in With such a configuration, the distance between the discharge position P2 of the rinse liquid L2 and the discharge position of the gas G can be reduced on the outer peripheral side of the workpiece W, that is, at the stage of forming the gas-liquid interface D0 by the rinse nozzle 46B and the gas nozzle. can be kept constant, and the rinsing liquid L2 can be effectively removed.

[Effect]
In the coating and developing apparatus 2 as the substrate processing apparatus described above, the rinsing liquid is supplied from the rinsing

nozzles

46A and 46B while continuing to discharge inert gas from the gas nozzle 56 to the workpiece W after the developer has been supplied. The discharge position of the workpiece W is moved from the center of the workpiece W toward the outer circumference. Thereby, the gas-liquid interface D0 formed by the inert gas and the rinsing liquid L2 can be moved from the center toward the outer periphery. At this time, when the rinse

nozzles

46A and 46B move from the center side to the outer peripheral side of the workpiece W, the discharge direction of the rinse liquid L2 is switched from the direction along the rotational direction of the workpiece W to the direction along the radial direction. . On the center side of the work W, when forming a gas-liquid interface, the discharge direction of the rinse liquid from the rinse nozzle is along the rotational direction of the work W, thereby suppressing the generation of residue after the rinse liquid is removed. be done. On the other hand, on the outer peripheral side of the workpiece W, the discharge direction of the rinse liquid from the rinse nozzle is along the radial direction of the workpiece W, so that the generation of residue after the rinse liquid is removed is suppressed. Therefore, by switching to the discharge direction of the rinsing liquid as described above when moving the gas-liquid interface D0 toward the outer circumference, it is possible to reduce the residue on the surface of the work W after cleaning the work W. .

As a specific method for realizing the above configuration, as shown in the first modification example, the first arm 61 provided with the first rinse nozzle 46A and the first gas nozzle 56A, and the second rinse nozzle 46B. and a second arm 62 provided with a second gas nozzle 56B. With such a configuration, on the center side of the workpiece W, the inert gas and rinse liquid are discharged from the first arm 61 whose discharge direction of the rinse liquid from the first rinse nozzle 46A is along the rotational direction of the workpiece W. By supplying the rinsing liquid and forming the gas-liquid interface D0, the generation of residue after removal of the rinsing liquid is suppressed. On the other hand, on the outer peripheral side of the workpiece W, an inert gas and a rinsing liquid are supplied from the second arm 62 whose discharge direction of the rinsing liquid from the second rinsing nozzle 46B is along the radial direction of the substrate. By forming the interface D0, the generation of residue after the rinsing liquid is removed is suppressed. Therefore, with the above configuration, it is possible to reduce the residue on the surface of the work W after cleaning the work W.

Further, as described in the above embodiment, the gas nozzle 56, the first rinse nozzle 46A, and the second rinse nozzle may be provided on an arm that is movable independently of each other. At this time, the direction of the rinsing liquid discharged from the first rinsing nozzle 46A is along the rotation of the workpiece W, and the direction of the rinsing liquid discharged from the nozzle of the second rinsing nozzle 46B is the direction along the rotation of the workpiece W. The direction may be along the radial direction of W. At this time, the control device 100 sets a first state in which a gas-liquid interface D0 is formed by supplying the rinsing liquid from the first rinsing nozzle 46A closer to the center of the workpiece W than the predetermined switching position, and switches. By supplying the rinsing liquid from the second rinsing nozzle 46B at a position closer to the outer circumference of the workpiece W, the state is switched to a second state in which a gas-liquid interface D0 is formed. At this time, the gas nozzle 56 may be moved in the outer circumferential direction in response to the movement of the rinse

nozzles

46A, 46B in the outer circumferential direction in the first state and the second state.

Even in the case of the above configuration, on the center side of the workpiece W, the air-liquid interface D0 is formed by supplying the rinsing liquid from the first rinsing nozzle 46A whose discharge direction is along the rotational direction of the substrate. Ru. On the other hand, on the outer peripheral side of the workpiece W, a gas-liquid interface D0 is formed by supplying the rinsing liquid from the second rinsing nozzle 46B whose discharge direction is along the radial direction of the substrate. Therefore, with the above configuration, it is possible to reduce the residue on the surface of the work W after cleaning the work W.

In addition, as another aspect, a gas nozzle 56A as a first gas nozzle whose discharge position is fixed at the center of the workpiece W, a first arm provided with a first rinse nozzle 46A, a second rinse nozzle 46B and a second gas nozzle are provided. and a second arm provided with a gas nozzle 56B. At this time, the direction of the rinsing liquid discharged from the first rinsing nozzle 46A is along the rotation of the workpiece W, and the direction of the rinsing liquid discharged from the nozzle of the second rinsing nozzle 46B is the direction along the rotation of the workpiece W. The direction may be along the radial direction of W. At this time, the control device 100 supplies the rinsing liquid from the first rinsing nozzle 46A while supplying the inert gas from the first gas nozzle 56A closer to the center of the workpiece W than the predetermined switching position. The first state may be in which the gas-liquid interface D0 is formed. Further, on the outer circumferential side of the work W from the switching position, the inert gas and the rinsing liquid may be supplied while moving the second arm to switch to the second state in which the gas-liquid interface D0 is formed.

Further, the supply unit includes a first gas nozzle whose discharge position is fixed at the center of the workpiece W, and a first arm provided with a first rinse nozzle that can change the direction of the rinse liquid to be discharged. It may also be a configuration. At this time, when the first rinse nozzle is moved in the outer circumferential direction, the control device 100 changes the direction of the rinse liquid discharged from the first rinse nozzle from the direction along the rotational direction of the workpiece W to the direction of the substrate. It may also be changed gradually along the radial direction.

In the coating and developing device 2 as a substrate processing device, in the first state, the rinsing liquid may also be discharged from the second rinsing nozzle 46B. Furthermore, in the second state, the discharge of the rinse liquid from the first rinse nozzle 46A may be stopped, and the amount of rinse liquid discharged from the second rinse nozzle 46B may be increased compared to the first state. With the above configuration, in the first state, the rinsing liquid is also discharged from the second rinsing nozzle, thereby promoting movement of the rinsing liquid from near the center of the substrate toward the outer circumference. On the other hand, in the second state, the discharge of the rinse liquid from the first rinse nozzle is stopped, so by increasing the discharge amount of the rinse liquid from the second rinse nozzle, the movement of the rinse liquid in the outer circumferential direction is prevented. It can be promoted.

Furthermore, the control device 100 may be configured to stop the discharge of gas from the first gas nozzle 56A in the second state. With the above configuration, the flow of gas on the surface of the workpiece W is stabilized in the second state, and disturbance of the gas-liquid interface D0 can be prevented.

The distance between the discharge position of the rinse liquid from the first rinse nozzle on the work W in the first state and the discharge position of gas from the gas nozzle on the work W in the second state is The distance may be smaller than the distance between the discharge position of the rinsing liquid from the second gas nozzle and the discharge position of the gas from the second gas nozzle.

In order to realize the above configuration, for example, the distance between the discharge position of the rinsing liquid from the first rinse nozzle 46A on the first arm 61 and the discharge position of the gas from the first gas nozzle 56A on the second arm 62 is The distance may be smaller than the distance between the discharge position of the rinse liquid from the second rinse nozzle 46B and the discharge position of the gas from the second gas nozzle 56B.

When forming the gas-liquid interface D0 on the workpiece W, residues can be suppressed if the discharge position of the rinsing liquid is closer to the discharge position of the gas on the center side of the workpiece W, and on the outer circumferential side of the workpiece W. Residue can be suppressed by separating the discharge position of the gas from the discharge position of the gas. As mentioned above, the nozzle of the first rinse nozzle is arranged so that the discharge position is close to the gas nozzle, and the nozzle of the second rinse nozzle is arranged so that the discharge position is far from the gas nozzle. By doing so, it is possible to further reduce the residue after washing.

Although various exemplary embodiments have been described above, various omissions, substitutions, and changes may be made without being limited to the exemplary embodiments described above. Also, elements from different embodiments may be combined to form other embodiments.

For example, in the above embodiment, a case has been described in which the rinsing liquid is removed by supplying the rinsing liquid to the workpiece W after the developer has been supplied. However, the process described in the above embodiment can also be applied to processes using other chemical solutions.

Furthermore, in the above embodiment, a case has been described in which the discharge amount of the rinse liquid L2 and the discharge amount of the gas G are intermittently switched. However, the discharge amount of the rinse liquid L2 and the discharge amount of the gas G may be changed stepwise or continuously. As described above, by gently forming the gas-liquid interface D0 and gradually moving it toward the outer circumference of the workpiece W, it is possible to suppress the generation of residue. Therefore, in order to form such a state, the discharge amount of the rinse liquid L2 and the discharge amount of the gas G may be adjusted as appropriate. Further, the rotation speed of the workpiece W, etc. may be adjusted as appropriate.

From the foregoing description, it will be understood that various embodiments of the disclosure are described herein for purposes of illustration and that various changes may be made without departing from the scope and spirit of the disclosure. Will. Therefore, the various embodiments disclosed herein are not intended to be limiting, with the true scope and spirit being indicated by the following claims.

DESCRIPTION OF SYMBOLS 1... Substrate processing system, 2... Coating and developing device, 3... Exposure device, 20... Holding and rotating section, 36... Developing nozzle, 40... Rinse liquid supply section, 40A... First rinse liquid supply section, 40B... Second rinse liquid Supply section, 46... Rinse nozzle, 46A... Rinse nozzle (first rinse nozzle), 46B... Rinse nozzle (second rinse nozzle), 47A, 47B... Arm, 50... Gas supply section, 56... Gas nozzle, 56A... Gas nozzle ( 1st gas nozzle), 56B... gas nozzle (second gas nozzle), 57... arm, 61... first arm, 62... second arm, 100... control device.

Claims

A substrate processing apparatus that processes a substrate,
a holding and rotating section that holds and rotates the substrate;
at least one gas nozzle for supplying an inert gas to the substrate after the developer has been supplied; and a rinsing liquid to the substrate at a discharge position provided on the outer peripheral side of the gas supply position by the gas nozzle. a supply unit comprising at least one rinse nozzle for supplying;
a control unit;
Equipped with
The control unit includes:
While continuing to discharge the inert gas from the gas nozzle, by moving the discharge position of the rinsing liquid from the rinsing nozzle from the center of the substrate toward the outer circumference, the inert gas and the rinsing liquid are moving the formed gas-liquid interface from the center toward the outer circumference,
When the rinse nozzle is moved from the center side of the substrate to the outer circumference side, the direction of the rinse liquid discharged from the rinse nozzle is changed from a direction along the rotation direction of the substrate to a direction along the radial direction of the substrate. Substrate processing equipment that switches in the opposite direction.
The supply unit includes a first arm provided with a first rinse nozzle and a first gas nozzle, and a second arm provided with a second rinse nozzle and a second gas nozzle,
The direction of the rinsing liquid discharged from the first rinsing nozzle is along the rotation direction of the substrate,
The direction of the rinsing liquid discharged from the second rinsing nozzle is along the radial direction of the substrate,
a first state in which the control unit forms the gas-liquid interface by supplying the inert gas and the rinsing liquid while moving the first arm closer to the center of the substrate than a predetermined switching position; The method further comprises switching to a second state in which the gas-liquid interface is formed by supplying the inert gas and the rinsing liquid while moving the second arm closer to the outer periphery of the substrate than the switching position. Item 1. The substrate processing apparatus according to item 1.
The control unit includes:
In the first state, the rinsing liquid is also discharged from the second rinsing nozzle,
In the second state, discharging of the rinsing liquid from the first rinsing nozzle is stopped, and an amount of the rinsing liquid discharging from the second rinsing nozzle is increased compared to the first state. Substrate processing apparatus according to item 2.
The substrate processing apparatus according to claim 3, wherein the control unit stops discharging the gas from the first gas nozzle in the second state.
The distance between the discharge position of the rinse liquid from the first rinse nozzle in the first arm and the discharge position of the gas from the first gas nozzle is the distance between the discharge position of the rinse liquid from the second rinse nozzle in the second arm. 5. The substrate processing apparatus according to claim 2, wherein the distance between the discharge position of the gas and the discharge position of the gas from the second gas nozzle is smaller than the distance between the discharge position of the gas and the discharge position of the gas from the second gas nozzle.
In the supply unit, a gas nozzle, a first rinse nozzle, and a second rinse nozzle are provided on an arm that is movable independently of each other,
The direction of the rinsing liquid discharged from the first rinsing nozzle is along the rotation direction of the substrate,
The direction of the rinsing liquid discharged from the second rinsing nozzle is along the radial direction of the substrate,
The control unit is configured to change the state from a first state in which the gas-liquid interface is formed by supplying the rinsing liquid from the first rinsing nozzle closer to the center of the substrate than the predetermined switching position to a state closer to the center of the substrate than the predetermined switching position. Also, by supplying the rinsing liquid from the second rinsing nozzle on the outer peripheral side of the substrate, switching to the second state in which the gas-liquid interface is formed, and in the first state and the second state. The substrate processing apparatus according to claim 1, wherein the gas nozzle is moved in the outer circumferential direction in response to the movement of the rinse nozzle in the outer circumferential direction.
The control unit includes:
In the first state, the rinsing liquid is also discharged from the second rinsing nozzle,
In the second state, discharging of the rinsing liquid from the first rinsing nozzle is stopped, and an amount of the rinsing liquid discharging from the second rinsing nozzle is increased compared to the first state. Substrate processing apparatus according to item 6.
The distance between the discharge position of the rinsing liquid from the first rinse nozzle on the substrate in the first state and the discharge position of the gas from the gas nozzle on the substrate in the second state is The substrate processing apparatus according to claim 6 , wherein the distance between the discharge position of the rinse liquid from the second rinse nozzle and the discharge position of the gas from the gas nozzle is smaller than the distance between the discharge position of the rinse liquid from the second rinse nozzle and the discharge position of the gas from the gas nozzle.
The supply unit includes a first gas nozzle whose discharge position is fixed at the center of the substrate, a first arm provided with a first rinse nozzle, and a second arm provided with a second rinse nozzle and a second gas nozzle. , has
The direction of the rinsing liquid discharged from the first rinsing nozzle is along the rotation direction of the substrate,
The direction of the rinsing liquid discharged from the second rinsing nozzle is along the radial direction of the substrate,
The control unit supplies the rinsing liquid from the first rinsing nozzle while moving the first arm while supplying inert gas from the first gas nozzle closer to the center of the substrate than a predetermined switching position. supplying the inert gas and the rinsing liquid while moving the second arm from the first state in which the gas-liquid interface is formed to a position closer to the outer periphery of the substrate than the switching position; The substrate processing apparatus according to claim 1, wherein the substrate processing apparatus is switched to a second state in which the gas-liquid interface is formed.
The control unit includes:
In the first state, the rinsing liquid is also discharged from the second rinsing nozzle,
In the second state, discharging of the rinsing liquid from the first rinsing nozzle is stopped, and an amount of the rinsing liquid discharging from the second rinsing nozzle is increased compared to the first state. 10. The substrate processing apparatus according to item 9.
The distance between the discharge position of the rinsing liquid from the first rinse nozzle on the substrate in the first state and the discharge position of the gas from the gas nozzle on the substrate in the second state is The substrate processing apparatus according to claim 9 or 10, wherein the distance is smaller than the distance between the discharge position of the rinse liquid from the second rinse nozzle and the discharge position of the gas from the second gas nozzle.
The supply unit includes a first gas nozzle whose discharge position is fixed at the center of the substrate, and a first arm provided with a first rinse nozzle that can change the direction of the rinse liquid to be discharged. ,
The control unit may change the direction of the rinsing liquid discharged from the first rinsing nozzle from a direction along the rotation direction of the substrate to a direction along the rotation direction of the substrate when the first rinsing nozzle moves in the outer circumferential direction. The substrate processing apparatus according to claim 1, wherein the temperature is gradually changed in a radial direction.
A substrate processing method for processing a substrate, the method comprising:
holding and rotating the substrate in a holding and rotating section;
While continuing to discharge the inert gas from the gas nozzle to the substrate after the developer has been supplied, the rinsing liquid is applied to the substrate at a discharge position provided on the outer circumferential side of the gas supply position by the gas nozzle. By moving the discharge position of the rinsing liquid from the rinsing nozzle that supplies the substrate from the center of the substrate toward the outer periphery, the gas-liquid interface formed by the inert gas and the rinsing liquid is moved from the center toward the outer periphery. to move and
including;
In the movement, when the rinse nozzle is moved from the center side to the outer circumferential side of the substrate, the direction of the rinse liquid discharged from the rinse nozzle is changed from the direction along the rotation direction of the substrate to the direction along the rotation direction of the substrate. A substrate processing method that switches the direction along the radial direction of the substrate.
A substrate processing program that causes a computer to execute substrate processing,
holding and rotating the substrate in a holding and rotating section;
While continuing to discharge the inert gas from the gas nozzle to the substrate after the developer has been supplied, the rinsing liquid is applied to the substrate at a discharge position provided on the outer circumferential side of the gas supply position by the gas nozzle. By moving the discharge position of the rinsing liquid from the rinsing nozzle that supplies the substrate from the center of the substrate toward the outer periphery, the gas-liquid interface formed by the inert gas and the rinsing liquid is moved from the center toward the outer periphery. to move and
cause the computer to execute
In the movement, when the rinse nozzle is moved from the center side to the outer circumferential side of the substrate, the direction of the rinse liquid discharged from the rinse nozzle is changed from the direction along the rotation direction of the substrate to the direction along the rotation direction of the substrate. A substrate processing program that switches the direction along the radial direction of the substrate.