JP7137986B2 - SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD - Google Patents

Description

The present disclosure relates to a substrate processing apparatus and a substrate processing method.

2. Description of the Related Art In a semiconductor device manufacturing process, a developing solution supplied onto a wafer during development of a resist film may reach the back surface of the wafer. In order to prevent such a phenomenon, in Patent Document 1, a cylindrical body (ring member) whose upper end is formed in a knife-edge shape is arranged on the rear surface of the wafer to suppress the developer from flowing around.

JP-A-7-249559

However, depending on the shape of the wafer, it may be desired to further improve the suppression of the developing solution.

Exemplary embodiments of the present disclosure provide a substrate processing apparatus and a substrate processing method capable of suppressing the processing liquid from flowing to the back surface of the substrate.

A substrate processing apparatus according to one exemplary embodiment is a substrate processing apparatus for processing a substrate, comprising: a substrate holding portion for holding the substrate; and a processing liquid applied to the surface of the substrate held by the substrate holding portion. a processing liquid supply unit for supplying a processing liquid; a ring member provided annularly at a position facing the back surface of the substrate held by the substrate holding unit and having a diameter smaller than that of the substrate; Before the supply, a modified region having a large contact angle is formed on at least a part of the rear surface of the substrate on the outer peripheral side of the position opposed to the ring member while being held by the substrate holding portion. and a modification processing unit.

According to one exemplary embodiment, there are provided a substrate processing apparatus and a substrate processing method capable of suppressing the processing liquid from flowing to the back surface of the substrate.

FIG. 1 is a perspective view of a substrate processing system according to one exemplary embodiment. FIG. 2 is a schematic diagram showing the internal configuration of a substrate processing system according to one exemplary embodiment. FIG. 3 is a block diagram showing main parts of the substrate processing system. FIG. 4 is a schematic diagram showing the hardware configuration of the control device. FIG. 5 is a vertical cross-sectional view showing a schematic configuration of a developing unit according to one exemplary embodiment. FIG. 6 is a flow diagram illustrating a substrate processing method according to one exemplary embodiment. FIGS. 7A to 7F are explanatory diagrams schematically showing each step of the substrate processing method according to one exemplary embodiment. 8(a) and 8(b) are explanatory diagrams showing the operation of the ring member in the substrate processing method according to one exemplary embodiment. FIG. 9 is an explanatory view enlarging one end of the wafer in the substrate processing method shown in FIG. FIG. 10 is an explanatory view enlarging one end of the wafer in the substrate processing method shown in FIG.

Various exemplary embodiments are described below.

In one exemplary embodiment, a substrate processing apparatus is a substrate processing apparatus for processing a substrate, comprising: a substrate holding portion for holding the substrate; and a processing liquid applied to the surface of the substrate held by the substrate holding portion. a processing liquid supply unit for supplying a processing liquid; a ring member provided annularly at a position facing the back surface of the substrate held by the substrate holding unit and having a diameter smaller than that of the substrate; Before the supply, a modified region having a large contact angle is formed on at least a part of the rear surface of the substrate on the outer peripheral side of the position opposed to the ring member while being held by the substrate holding portion. and a modification processing unit.

In the above-described substrate processing apparatus, the modification processing is performed by the modification processing unit on at least a part of the rear surface of the substrate, which is held by the substrate holding unit and is located on the outer peripheral side of the position facing the ring member. As a result, a modified region modified to increase the contact angle is provided on the slope of the substrate. By providing this modified region, the processing liquid that has flowed into the back surface of the substrate is promoted to drop from the substrate in the modified region. Therefore, since it is possible to prevent the processing liquid from flowing into the inside of the modified region, it is possible to suppress the processing liquid from flowing into the back surface of the substrate.

In another exemplary embodiment, the modified region is formed in an annular shape along the outer peripheral edge of the substrate.

By forming the modified region in an annular shape along the outer peripheral edge of the substrate, it is possible to further effectively suppress the treatment liquid from flowing into the back surface of the substrate.

In another exemplary embodiment, it further includes a warp information acquisition unit that acquires information about the warp of the substrate, and the modification processing unit performs the modification based on the information acquired by the warp information acquisition unit. Determines the size of the quality region.

The warpage information acquisition unit acquires information about the warp of the substrate, and the modification processing unit determines the size of the modified region based on the information. Since the size can be determined, it is possible to effectively suppress the treatment liquid from reaching the back surface according to the shape of the substrate.

In another exemplary embodiment, the ring member can move up and down based on the information acquired by the warpage information acquiring section.

Since the ring member can be moved up and down based on the information acquired by the warpage information acquisition unit, for example, when the substrate is warped, the ring member can be moved up and down corresponding to the warpage of the substrate. Therefore, it is possible to effectively suppress the treatment liquid from entering the back surface regardless of the shape of the substrate.

In another exemplary embodiment, the modification processor forms a modified region by attaching a modifier to the substrate.

By adopting a configuration in which the modification processing section forms the modified region by causing the modifying agent to adhere to the substrate, the modified region can be easily formed.

In another exemplary embodiment, the modifier is a cationic surfactant.

By using a cationic surfactant as a modifier, it is possible to prevent generation of by-products during formation of the modified region. Therefore, there is no need to consider the influence of by-products generated during formation of the modified region, and the location of the modified region can be flexibly selected.

In one exemplary embodiment, the substrate processing method is a substrate processing method for processing a substrate, wherein the back surface of the substrate has a diameter smaller than that of the substrate when held by a substrate holding unit that holds the substrate. a modification treatment step of forming a modified region with a larger contact angle in at least a part of a region on the outer peripheral side of a position facing the ring member having a surface of the substrate held by the substrate holding part; and a processing liquid supply step of supplying the processing liquid to.

In the above-described substrate processing method, in the modification treatment step, the modification treatment is performed on at least part of the region of the rear surface of the substrate that is located on the outer peripheral side of the position facing the ring member while being held by the substrate holding portion. will be As a result, a modified region modified to increase the contact angle is provided on the slope of the substrate. By providing this modified region, the processing liquid that has flowed into the back surface of the substrate is promoted to drop from the substrate in the modified region. Therefore, since it is possible to prevent the processing liquid from flowing into the inside of the modified region, it is possible to suppress the processing liquid from flowing into the back surface of the substrate.

Various exemplary embodiments are described in detail below with reference to the drawings. In the explanation, the same reference numerals are given to the same elements or elements having the same function, and duplicate explanations are omitted.

[Substrate processing system]
The substrate processing system 1 is a system for forming a photosensitive film on a substrate, exposing the photosensitive film, and developing the photosensitive film. A substrate to be processed is a semiconductor wafer W, for example. A photosensitive film is, for example, a resist film. A substrate processing system 1 includes a coating/developing device 2 and an exposure device 3 . The exposure device 3 exposes a resist film (photosensitive film) formed on a wafer W (substrate). Specifically, an exposure target portion of the resist film is irradiated with an energy beam by a method such as liquid immersion exposure. The coating/developing device 2 performs processing for forming a resist film on the surface of the wafer W (substrate) before exposure processing by the exposure device 3, and performs development processing for the resist film after the exposure processing.

[Substrate processing equipment]
The configuration of the coating/developing apparatus 2 will be described below as an example of the substrate processing apparatus. As shown in FIGS. 1 and 2, the coating/developing apparatus 2 includes a carrier block 4, a processing block 5, an interface block 6, and a control device 100. FIG.

The carrier block 4 introduces the wafer W into the coating/developing apparatus 2 and leads the wafer W out of the coating/developing apparatus 2 . For example, the carrier block 4 can support a plurality of carriers C for wafers W and incorporates a transfer arm A1. The carrier C accommodates a plurality of circular wafers W, for example. The transfer arm A1 takes out the wafer W from the carrier C, transfers it to the processing block 5, receives the wafer W from the processing block 5, and returns it to the carrier C. FIG.

The processing block 5 has a plurality of processing modules 11,12,13,14. Each of the processing modules 11, 12, 13 incorporates a liquid processing unit U1, a thermal processing unit U2, and a transfer arm A3 for transferring the wafer W to these units.

The processing module 11 forms a lower layer film on the surface of the wafer W and an intermediate film on the lower layer film by the liquid processing unit U1 and the thermal processing unit U2. The liquid processing unit U1 of the processing module 11 coats the wafer W with a processing liquid for forming the lower layer film and the intermediate film. The heat treatment unit U2 of the treatment module 11 performs various heat treatments associated with the formation of the lower layer film and the intermediate film. An example of the underlayer film is an antireflection (SiARC) film. Examples of the intermediate film include an SOC (Spin On Carbon) film and a hard mask containing metal (metal hard mask).

The processing module 12 forms a resist film on the intermediate film by the liquid processing unit U1 and the thermal processing unit U2. The liquid processing unit U1 of the processing module 12 applies a processing liquid for forming a resist film onto the intermediate film. The heat treatment unit U2 of the processing module 12 performs various heat treatments associated with the formation of the resist film. A specific example of the heat treatment includes heat treatment (PAB: Pre Applied Bake) for curing the coating film to form the resist film R. FIG.

The processing module 13 forms an upper layer film on the resist film using the liquid processing unit U1 and the thermal processing unit U2. The liquid processing unit U1 of the processing module 13 applies a liquid for forming an upper layer film onto the resist film. The heat treatment unit U2 of the treatment module 13 performs various heat treatments associated with the formation of the upper layer film.

The processing module 14 incorporates a developing unit U3, a thermal processing unit U4, and a transfer arm A3 for transferring the wafer W to these units. The processing module 14 develops the exposed resist film using the developing unit U3 and the thermal processing unit U4. The developing unit U3 applies a developing solution to the surface of the exposed wafer W and then rinses the developing solution with a rinsing solution to develop the resist film. The thermal processing unit U4 performs various types of thermal processing associated with development processing. Specific examples of the heat treatment include heat treatment before development (PEB: Post Exposure Bake), heat treatment after development (PB: Post Bake), and the like.

A shelf unit U10 is provided on the carrier block 4 side in the processing block 5 . The shelf unit U10 is partitioned into a plurality of vertically aligned cells. A lifting arm A7 is provided near the shelf unit U10. The elevating arm A7 elevates the wafer W between the cells of the shelf unit U10.

A shelf unit U11 is provided on the side of the interface block 6 in the processing block 5. As shown in FIG. The shelf unit U11 is partitioned into a plurality of vertically aligned cells.

The interface block 6 transfers wafers W to and from the exposure apparatus 3 . For example, the interface block 6 incorporates a delivery arm A8 and is connected to the exposure device 3. FIG. The transfer arm A8 transfers the wafer W placed on the shelf unit U11 to the exposure apparatus 3, receives the wafer W from the exposure apparatus 3, and returns it to the shelf unit U11.

The control device 100 controls the coating/developing device 2 so as to execute the coating/developing process according to the following procedure, for example. First, the controller 100 controls the transfer arm A1 to transfer the wafer W in the carrier C to the shelf unit U10, and controls the lift arm A7 to place the wafer W in the cell for the processing module 11. FIG.

Next, the control device 100 controls the transfer arm A3 to transfer the wafer W on the shelf unit U10 to the liquid processing unit U1 in the processing module 11 and the thermal processing unit U2. Further, the control device 100 controls the liquid processing unit U1 and the thermal processing unit U2 so as to form a lower layer film on the surface of this wafer W and further form an intermediate film on the lower layer film. After that, the controller 100 controls the transfer arm A3 to return the wafer W on which the lower layer film and the intermediate film are formed to the shelf unit U10, and the lift arm A7 to place this wafer W in the cell for the processing module 12. to control.

Next, the control device 100 controls the transfer arm A3 so as to transfer the wafer W on the shelf unit U10 to the liquid processing unit U1 and the thermal processing unit U2 in the processing module 12. FIG. Further, the control device 100 controls the liquid processing unit U1 and the thermal processing unit U2 so as to form a resist film on the surface of the wafer W. FIG. After that, the controller 100 controls the transfer arm A3 to return the wafer W to the shelf unit U10, and controls the lift arm A7 to place the wafer W in the cell for the processing module 13. FIG.

Next, the control device 100 controls the transfer arm A3 so as to transfer the wafer W on the shelf unit U10 to each unit in the processing module 13. FIG. Further, the control device 100 controls the liquid processing unit U1 and the thermal processing unit U2 so as to form an upper layer film on the resist film of the wafer W. FIG. After that, the controller 100 controls the transfer arm A3 to transfer the wafer W to the shelf unit U11.

Next, the control device 100 controls the delivery arm A8 so as to deliver the wafer W on the shelf unit U11 to the exposure device 3. FIG. After that, the control device 100 controls the transfer arm A8 so that the wafer W subjected to the exposure processing is received from the exposure device 3 and arranged in the cell for the processing module 14 in the shelf unit U11.

Next, the controller 100 controls the transfer arm A3 to transfer the wafer W on the shelf unit U11 to each unit in the processing module 14, and controls the developing unit U3 and the developing unit U3 to develop the resist film of the wafer W. It controls the thermal processing unit U4. After that, the controller 100 controls the transfer arm A3 to return the wafer W to the shelf unit U10, and controls the lift arm A7 and transfer arm A1 to return the wafer W to the carrier C. FIG. Coating/developing processing is completed as described above.

The specific configuration of the substrate processing apparatus is not limited to the configuration of the coating/developing apparatus 2 illustrated above. The substrate processing apparatus may be of any type as long as it includes a heat treatment unit U2 or heat treatment unit U4 and a controller 100 capable of controlling it.

[Control device]
As shown in FIG. 3, the control device 100 has, as functional modules, a reading unit M1, a storage unit M2, a processing unit M3, and an instruction unit M4. These functional modules are simply the functions of the control device 100 divided into a plurality of modules for convenience, and do not necessarily mean that the hardware constituting the control device 100 is divided into such modules. Each functional module is not limited to being realized by executing a program, but is realized by a dedicated electric circuit (e.g., logic circuit) or an integrated circuit (ASIC: Application Specific Integrated Circuit) that integrates this. may

A reading unit M1 reads a program from a computer-readable recording medium RM. The recording medium RM records a program for operating each part of the substrate processing system 1 . The recording medium RM may be, for example, a semiconductor memory, an optical recording disk, a magnetic recording disk, or a magneto-optical recording disk.

The storage unit M2 stores various data. The storage unit M2 stores, for example, programs read from the recording medium RM by the reading unit M1, various data (so-called processing recipes) for processing the wafer W, and input from an operator via an external input device (not shown). Stores setting data, etc.

The processing unit M3 processes various data. The processing section M3 generates operation signals for operating the liquid processing unit U1, the heat processing unit U2, the developing unit U3, and the heat processing unit U4, based on various data stored in the storage section M2, for example.

The instruction unit M4 transmits the operation signal generated by the processing unit M3 to various devices.

The hardware of the control device 100 is composed of, for example, one or more control computers. For example, the control device 100 has a circuit 120 shown in FIG. Circuit 120 includes one or more processors 121 , memory 122 , storage 123 , input/output ports 124 and timer 125 . The storage 123 has a computer-readable storage medium such as a hard disk. The storage medium stores a program for causing the exposure/development apparatus 2 to execute a substrate processing procedure, which will be described later. The storage medium may be a removable medium such as a non-volatile semiconductor memory, a magnetic disk and an optical disk. The memory 122 temporarily stores the program loaded from the storage medium of the storage 123 and the calculation result by the processor 121 . The processor 121 cooperates with the memory 122 to execute the above programs, thereby configuring each of the above functional modules. The input/output port 124 performs input/output of electrical signals with each part of the substrate processing system 1 according to instructions from the processor 121 . The timer 125 measures elapsed time by, for example, counting reference pulses of a constant cycle.

The control device 100 controls the liquid processing unit U1, the thermal processing unit U2, the developing unit U3, the thermal processing unit U4, etc. included in the substrate processing system 1 with the above configuration. The control device 100 also controls other units not shown in FIG. 3 at the same time. Note that the configuration of the control device 100 described above is an example, and is not limited to the above.

[Structure of development unit]
Next, the configuration of the developing unit U3 described above will be described. FIG. 5 is a longitudinal sectional view schematically showing the outline of the configuration of the developing unit U3.

The developing unit U3 is provided with a spin chuck 300 as a substrate holding section for holding the wafer W as shown in FIG. The spin chuck 300 has a horizontal upper surface, and the upper surface is provided with a suction port (not shown) for sucking the wafer W, for example. The wafer W can be sucked and held on the spin chuck 300 by suction from this suction port.

The spin chuck 300 is connected via a shaft 301 to a drive section 302 provided below the spin chuck 300 . The drive unit 302 allows the spin chuck 300 to rotate at a predetermined speed, and the spin chuck 300 can move up and down.

For example, three elevating pins 310 for supporting the wafer W from below and elevating the wafer W are provided on the back side of the wafer W held by the spin chuck 300 . The lifting pin 310 can be lifted and lowered by a lifting portion 311 .

Above the spin chuck 300, a developer nozzle 320 is provided as a processing liquid supply unit for supplying the surface of the wafer W with a developer as a processing liquid. A supply pipe 322 communicating with a developer supply source 321 is connected to the developer nozzle 320 . A developer is stored in the developer supply source 321 .

The developer nozzle 320 is a long slit nozzle extending in the horizontal direction. A slit-shaped discharge port 320a longer than the diameter of the wafer W is formed in the lower end surface of the developer nozzle 320, for example.

The developer nozzle 320 is connected to a drive (not shown) via an arm (not shown). By driving the drive unit, the arm can move in the horizontal direction, and the developer nozzle 320 can be moved over the surface of the wafer W. FIG. Further, the arm can be moved up and down by driving the drive unit, and the height of the developer nozzle 320 can be adjusted.

Above the spin chuck 300, a rinsing liquid nozzle 330 is provided for supplying a rinsing liquid for the developing liquid to the surface of the wafer W, as shown in FIG. A supply pipe 332 communicating with a rinse liquid supply source 331 is connected to the rinse liquid nozzle 330 . A rinse liquid such as pure water (DIW) is stored in the rinse liquid supply source 331 .

The rinse liquid nozzle 330 is connected to a drive section (not shown) via an arm (not shown). By driving the drive unit, the arm can move in the horizontal direction, and the rinsing liquid nozzle 330 can be moved over the surface of the wafer W. FIG. Further, the arm can be moved up and down by driving the drive unit, and the height of the rinse liquid nozzle 330 can be adjusted.

Above the outer edge of the wafer W held by the spin chuck 300, a warp measurement unit 340 (warp information acquisition unit) for measuring the warp of the wafer W is provided as shown in FIG. The warp measuring unit 340 measures the magnitude of the warp as information related to the warp of the wafer W, and acquires the measurement result. A laser displacement meter, for example, is used for the warp measurement unit 340 . The warp measurement unit 340 rotates the wafer W held by the spin chuck 300 by 360 degrees and measures the displacement of the outer edge of the wafer W in the height direction. In addition, a reference value in the height direction of a flat wafer W with no warp held by the spin chuck 300 is grasped in advance. Then, the warp amount of the wafer W is measured from the difference between the displacement of the outer edge of the wafer W measured by the warp measuring unit 340 and the reference value. Information (warp information) on the warp of the wafer W measured by the warp measuring unit 340 is output to the control device 100 described above.

A plurality of back rinse nozzles 350 are provided below the spin chuck 300 as rinse liquid supply units for spraying the rinse liquid onto the outer peripheral portion of the back surface of the wafer W. As shown in FIG. The back rinse nozzle 350 is connected to a supply pipe 352 communicating with a rinse liquid supply source 351 . A rinse liquid such as pure water (DIW) is stored in the rinse liquid supply source 351 . Note that the rinse liquid supply source 351 may be provided in common with the rinse liquid supply source 331 described above.

Further, below the spin chuck 300, a plurality of modifying liquid nozzles 360 are provided as a modifying processing section for spraying a modifying liquid for surface modification onto the outer peripheral portion of the back surface of the wafer W. As shown in FIG. In this embodiment, a case where a modifying liquid is used as a modifying agent for surface modification will be described. The reforming liquid nozzle 360 is connected to a supply pipe 362 communicating with a reforming liquid supply source 361 . A modifying liquid for increasing the contact angle of the back surface of the wafer W is stored in the modifying liquid supply source 361 .

The modifying liquid is a liquid for increasing the contact angle of a specific area on the outer circumference of the back surface of the wafer W. FIG. A cationic surfactant can be used as the modifying liquid. As a cationic surfactant, for example, steartrimonium chloride can be used, but it is not limited to this. The back surface of the wafer W is covered with a silicon oxide film (silicon thermal oxide film: SiO ₂ ). Therefore, any material that can be attached to a silicon oxide film, has a surface contact angle larger than that of the silicon oxide film, and does not generate by-products during modification can be used. Can be used for quality liquids. Further, the modification (change in contact angle) by the modification liquid may be temporary only while the development processing is being performed, and the modification liquid is adhered to the back surface of the wafer W. It is sufficient if the contact angle can be increased in the state. A modified region is formed by spraying the modifying liquid. Determination of the size of the modified region and spraying of the modifying liquid are controlled by the controller 100 . That is, the control device 100 functions as part of the reforming processing section. The modification of the back surface of the wafer W with the modification liquid will be described later.

Returning to FIG. 5 , a cup body 370 is provided on the side of the spin chuck 300 so as to surround the wafer W held by the spin chuck 300 . The cup body 370 has an outer cup 371 and an inner cup 372 . The outer cup 371 has a rectangular upper side and a cylindrical lower side. A stepped portion 371a is provided on the lower side of the outer cup 371, and an elevating portion 373 for elevating the outer cup 371 is connected to the stepped portion 371a. The inner cup 372 has a cylindrical shape and its upper side is slanted inward. When the outer cup 371 is raised, the inner cup 372 is pushed upward by the contact of the lower end surface thereof with the stepped portion 371a. As a result, when removing the developer from the wafer W, the cup body 370 (the outer cup 371 and the inner cup 372) can be raised to catch the liquid scattered from the wafer W. FIG.

Below the cup body 370, a liquid receiving portion 376 for collecting and discharging the liquid collected by the cup body 370 is provided. A discharge pipe 377 for discharging the gas and liquid in the liquid receiving portion 376 is connected to the bottom surface of the liquid receiving portion 376 , and the gas is discharged through a gas-liquid separator (not shown) provided downstream of the discharge pipe 377 . Liquid separation takes place. The waste liquid after gas-liquid separation is collected in a waste liquid tank (not shown).

A circular plate 380 is provided below the spin chuck 300 , and an annular guide member 381 having a mountain-shaped cross section is provided outside the circular plate 380 . The guide member 381 guides the developer or rinse liquid spilled from the wafer W to the liquid receiver 376 provided outside the circular plate 380 .

An annular ring member 382 is provided at the top of the guide member 381 . The ring member 382 has a diameter smaller than that of the wafer W and is provided on the outer edge of the back surface of the wafer W. As shown in FIG. Specifically, the ring member 382 is arranged at a position 65 mm from the outer surface of the wafer W, for example. The ring member 382 has a knife-edge shape at its upper end facing the back surface of the wafer W, and constitutes a so-called knife-edge ring. Moreover, the upper surface 382a of the ring member 382 is a flat surface.

A lifting section 383 is connected to the guide member 381 and the ring member 382 . The ring member 382 can be moved up and down by the elevating portion 383 so as to approach and separate from the rear surface of the wafer W. As shown in FIG. The lifting unit 383 is not particularly limited as long as it can lift the guide member 381 and the ring member 382, but an actuator such as a piezoelectric element or a motor is used.

In addition, for example, when the ring member 382 is provided separately from the guide member 381, the raising/lowering part 383 may raise/lower only the ring member 382.

The ring member 382 is used to prevent the developer supplied from the developer nozzle 320 to the front surface of the wafer W from going around to the rear surface. Specifically, during development, the ring member 382 is arranged close to the back surface of the wafer W by the elevating unit 383 so that the back surface of the wafer W and the top surface 382a of the ring member 382 are at a predetermined distance. Then, a liquid seal is formed by the developer between the back surface of the wafer W and the upper surface 382a of the ring member 382, thereby receiving and absorbing the developer that is about to flow further into the back surface of the wafer W. . In order to properly form this liquid seal, the upper surface 382a can be flat as described above.

The position of the ring member 382 (vertical position: that is, the distance between the ring member 382 and the wafer W) during development is controlled by the controller 100 . In the control device 100, the distance between the back surface of the wafer W and the upper surface 382a of the ring member 382 is always kept within a predetermined distance regardless of the warp state of the wafer W based on the warp information of the wafer W measured by the warp measuring unit 340. The position of the ring member 382 is controlled so that For example, the control device 100 grasps in advance the reference position of the ring member 382 with respect to the flat wafer W without warping. Then, the position of the ring member 382 is calculated using the warp information of the wafer W, that is, the amount of warp as the difference from the reference position of the ring member 382 .

It should be noted that the ease with which the developer flows around the back surface of the wafer W varies depending on the type of developer, the surface condition of the back surface of the wafer W, and the like. Therefore, the fixing conditions such as the type of developer and the surface condition of the back surface of the wafer W may be set and registered in advance in the control device 100 so that they are taken into account.

It should be noted that the ring member 382 may not be moved up and down. That is, the lifter 383 may not be provided, and the position of the ring member 382 (and the guide member 381) may be fixed.

[Substrate processing method by developing unit]
Next, a substrate processing method performed using the developing unit U3 configured as described above will be described. FIG. 6 is a flowchart for explaining the procedure of substrate processing by the developing unit U3. Also, FIG. 7 is a diagram schematically illustrating the procedure of substrate processing by the developing unit U3.

As shown in FIG. 6, the substrate processing method includes measurement of the warp of the wafer W (S01), setting of the modification processing area (S02), modification processing (S03: modification processing step), and development processing ( S04: treatment liquid supply step).

First, the wafer W is carried into the developing unit U3 of the processing module 14 by the transfer arm A3 of the exposure/development device 2. As shown in FIG. The loaded wafer W is transferred from the transfer arm A3 to the lifting pins 310 which have been raised and lowered in advance. Subsequently, the elevating pins 310 are lowered, and the wafer W is held by the spin chuck 300 .

In this state, the wafer W held by the spin chuck 300 is rotated 360 degrees as shown in FIG. Warp is measured (S01). Warp information of the wafer W measured by the warp measuring unit 340 is output to the control device 100 .

Note that, in the present embodiment, the warp measurement by the warp measurement unit 340 is performed for each wafer W individually. However, the timing of warp measurement is not limited to this, and may be performed for each lot, for example. Alternatively, the warp of the wafer W may be measured each time the processing recipe for wafer processing is changed.

Based on the warpage information of the wafer W, the controller 100 calculates the position of the ring member 382 at which the distance H1 between the rear surface of the wafer W and the upper surface 382a of the ring member 382 is reached. Based on the calculated position of the ring member 382, the elevating section 383 is lifted and the ring member 382 is arranged at the position. That is, when the wafer W is concavely warped (when the outer edge of the wafer W is warped upward) as shown in FIG. On the other hand, when the wafer W is warped in a convex shape (when the outer edge of the wafer W is warped downward) as shown in FIG. In addition, in this embodiment, the distance H1 is 1.0 mm±0.2 mm, for example. Further, the movement of the ring member 382 may be performed after determination of a modification target region (modification region) (S02) and modification processing (S03), which will be described later.

For example, when the warp of the wafer W is not uniform over the entire circumference, the ring member 382 is arranged such that the distance H1 is between the rear surface of the wafer W at the point where the warp is the smallest and the upper surface 382a of the ring member 382. It can be configured to control the position. As such a case, there is a case where the amount of warping of the outer edge of the wafer W is uneven in the circumferential direction and the degree of warping varies depending on the position of the outer edge. In addition, in this embodiment, the minimum distance H1 is 1.0 mm±0.2 mm, for example.

Next, in the control device 100, a modification target region is determined based on the warpage information of the wafer W (S02). The modification target region is a region of the rear surface of the wafer W in which the contact angle is greatly changed by spraying the modification liquid, that is, it corresponds to the modification region. By increasing the contact angle of the region to be modified and promoting hydrophobization of the back surface of the wafer W, the developer (or rinse liquid) is promoted to fall on the modified region after the modification process.

The modification target region will be described with reference to FIG. 9 . The area to be modified by the modifying liquid is the outer peripheral area of the back surface of the wafer W. As shown in FIG. In particular, a region arranged outside the ring member 382 in a state where the wafer W is held by the spin chuck 300 is the region to be modified. Although FIG. 9 is an enlarged view of part of the outer peripheral region of the wafer W, the modification target region includes at least the region P1 among the regions P1, P2, and P3. The regions P1 to P3 are all annular regions with the center of the wafer W as the axis, and are continuous from the inner peripheral side of the wafer W in the order of the region P3, the region P1, and the region P1. Of the regions P1 to P3, the region P1 is the target region for modification. Both the regions P2 and P3 are regions to be modified as necessary.

The boundary B1 between the regions P1 and P2, that is, the outer edge of the region P1 is closer to the center than the center between the outer peripheral edge B11 of the wafer W and the position B12 facing (the center of) the upper surface 382a of the ring member 382. It is provided on the outer peripheral side. A boundary B2 between the regions P1 and P2, that is, an inner end portion of the region P1 connects an outer peripheral end B11 of the wafer W and a position B12 facing (the center of) the upper surface 382a of the ring member 382. It is provided at a position 1% to 30% from the position B12 facing the upper surface 382a of the ring member 382 with respect to the length. The area between the outer edge and the inner edge of the area P1 set in this way is the target modification area.

The regions corresponding to the regions P2 and P3, that is, the outer peripheral side and the inner peripheral side of the region P1, are both regions that can be modified as required. There is a possibility that the developing solution (or rinsing solution) will flow into the back surface of the wafer W outside the position B<b>12 corresponding to the upper surface 832 a of the ring member 821 . On the other hand, it is considered unlikely that the ring member 382 will allow the developer (or rinse liquid) to flow inside the position B12. Therefore, by setting the inner side of the position B12 on the back surface of the wafer W not to be the modification target area, it is possible to sufficiently obtain the effect of the modification while suppressing the cost of the modification. Whether or not the regions P2 and P3 are to be modified may be changed based on the type of the wafer W or the type of the processing liquid (such as the developer D), or may be determined based on the shape of the wafer W. can be changed by

Of the shape of the wafer W, the modification target region may be changed based on its warpage. For example, as shown in FIG. 8A, when the wafer W is warped in a concave shape (when the outer edge of the wafer W is warped upward), the developing solution (or the rinse solution) may flow into the back surface of the wafer W. is large (the amount of wraparound is large). Therefore, it is possible to increase the effect of reducing adhesion of the developer (or rinse liquid) by providing a wide area to be modified. On the other hand, as shown in FIG. 8B, when the wafer W is warped in a convex shape (when the outer edge of the wafer W is warped downward), the developing solution (or rinsing solution) does not reach the back surface of the wafer W. It is conceivable that wraparound is small (the amount of wraparound is small). Therefore, even if the area to be modified is provided narrowly, the effect of reducing adhesion of the developer (or the rinse liquid) can be sufficiently exhibited.

After setting the size of the region to be modified, as shown in FIG. The reforming liquid R1 is sprayed onto the region to carry out the reforming process (S03). By continuing the rotation of the wafer W by the spin chuck 300, the excessively sprayed modifying liquid R1 is properly removed. Moreover, when processing such as heating and drying is required during the modification processing, appropriate processing is performed after the modification liquid R1 is sprayed. By performing the modification process, the area that was the modification target area becomes a modified area P10 (see FIG. 10) in which the contact angle is changed. The modified region P10 is an annular region along the outer peripheral edge formed on the outer peripheral side of the back surface of the wafer W (outer than the ring member 382). That is, when the wafer W is held by the spin chuck 300 , the modified region P10 is provided between the outer peripheral edge of the wafer W and the position B12 facing the ring member 382 . Note that the modified region P10 may be annular.

When the contact angle of the back surface (the surface of the wafer W) in the modified region P10 is 50° or more, the effect of preventing adhesion of the developing solution (or the rinse solution) is enhanced. Therefore, it is preferable to set the contact angle in the modified region P10 within the above range. By making the contact angle of at least the modified region P10 larger than the contact angle of the surface of the wafer W when the modification process is not performed, the effect of preventing adhesion of the developer (or the rinse liquid) can be obtained.

After that, development processing (S04) is performed. The specific procedure is as follows.

First, after the developer nozzle 320 is moved to above the outer edge (one end) of the wafer W, the developer D is exposed from the outlet 320a of the developer nozzle 320 by surface tension. After that, the developer nozzle 320 is lowered to bring the developer D into contact with the surface of the wafer W, and the developer nozzle 320 is moved in the radial direction of the wafer W to perform development as shown in FIG. The liquid nozzle 320 is moved to the outer edge of the wafer W (the other end). As a result, the developer nozzle 320 supplies the developer D to the entire surface of the wafer W to form a puddle. The puddle of the developer D develops the resist film on the wafer W. As shown in FIG.

When the developing process is performed using the developing solution D in this manner, the developing solution D supplied to the front surface of the wafer W flows to the rear surface through the outer edge portion of the wafer W as shown in FIG. If the developing solution D flows out of the cleaning range of the backside cleaning described later, that is, inside the backside of the wafer W, the backside of the wafer W becomes a cause of contamination.

In this regard, in the present embodiment, the distance H1 is maintained between the back surface of the wafer W and the top surface 382a of the ring member 382, so that the developer D does not flow between the back surface of the wafer W and the top surface 382a of the ring member 382. to form a liquid seal (liquid film) Ds. With this liquid seal Ds, it is possible to prevent the developing liquid D from flowing into the rear surface of the wafer W. As shown in FIG.

Further, since the upper surface 382a of the ring member 382 forms a flat surface, the width of the liquid seal Ds is widened, and the effect of preventing the liquid seal Ds from flowing around can be improved.

Further, in the present embodiment, the position of the ring member 382 is adjusted based on the warp information of the wafer W measured by the warp measuring unit 340. Therefore, even if the wafer W is warped, the developer D can be appropriately suppressed from reaching the rear surface side of the wafer W.

Further, in the present embodiment, a modified region P10 (see FIG. 10) is provided on the rear surface of the wafer W outside the position facing the upper surface 382a of the ring member 382 (outside the position B12 shown in FIG. 9). It is In the modified region P10, the contact angle of the surface is larger than that in the other regions, so the developer D running along the modified region P10 tends to drop downward. That is, the developer D can be prevented from adhering to the back surface of the wafer W. FIG. In addition, the modified region P10 is provided outside the position facing the upper surface 382a of the ring member 382. As shown in FIG. Therefore, the developer D reaching the ring member 382 can be reduced, and a large amount of the developer D can be prevented from reaching the ring member 382 and reducing the effect of the liquid seal Ds to prevent the liquid from flowing around.

Next, when the development with the developer D is completed, the developer nozzle 320 is moved to the standby section 327, and then the rinse liquid nozzle 330 is moved above the central portion of the wafer W as shown in FIG. 7(d). move up to After that, while rotating the wafer W by the spin chuck 300 , the rinse liquid R<b>2 is supplied from the rinse liquid nozzle 330 to the surface of the wafer W. FIG. The supplied rinse liquid R2 is spread over the entire surface of the wafer W by centrifugal force, and the surface is cleaned.

Even when the cleaning process is performed using the rinsing liquid R2, the distance H1 is maintained between the back surface of the wafer W and the upper surface 382a of the ring member 382, and the liquid seal Ds of the developer D is formed. ing. The liquid seal Ds can prevent the rinse liquid R2 supplied to the front surface of the wafer W from flowing to the back surface. Similarly, since the rinse liquid R2 is promoted to drop in the modified region P10, it is possible to further suppress the rinse liquid R2 from flowing around.

After a predetermined period of time has passed, as shown in FIG. Cleaning of the back surface of the wafer W is started. The rinse liquid R3 is supplied from the back rinse nozzle 350 .

When cleaning the back surface of the wafer W, first, the ring member 382 is lowered by the elevating section 383 so that the distance between the back surface of the wafer W and the top surface 382a of the ring member 382 is the distance H2 as shown in FIG. In this embodiment, the distance H2 is, for example, a position about 1.0 mm lower than the height position of the distance H1. Subsequently, the back rinse nozzle 350 sprays the rinse liquid R3 onto the outer peripheral portion of the back surface of the wafer W. As shown in FIG.

Since the ring member 382 is lowered to a predetermined position before the rinse liquid R3 is sprayed onto the back surface of the wafer W, it is possible to prevent the rinse liquid R3 from interfering with the ring member 382 and remaining there. . Since the rinse liquid R3 does not remain in the ring member 382 in this manner, it is possible to suppress adhesion of liquid droplets to the back surface of the wafer W, thereby suppressing surface defects of the wafer W caused by the liquid droplets. can.

After the surface cleaning of the wafer W with the rinsing liquid R2 and the back side cleaning of the wafer W with the rinsing liquid R3 are sufficiently performed, the supply of the rinsing liquid R2 from the rinsing liquid nozzle 330 is stopped as shown in FIG. 7(f). At the same time, the supply of the rinse liquid R3 from the back rinse nozzle 350 is stopped. Then, the spin chuck 300 continues to rotate the wafer W, the rinse liquid R2 supplied to the surface of the wafer W is shaken off and removed, and the surface is dried.

After that, the rinsing liquid nozzle 330 is moved, and the wafer W is unloaded from the developing unit U3 by the transport arm 70a of the wafer transport device . In this way, a series of developing processes for wafers W is completed.

As described above, according to the substrate processing apparatus (the coating/developing apparatus 2 including the developing unit U3) and the substrate processing method described in the present embodiment, the modifying liquid nozzle 360 serving as the modifying section is used to spray the The rear surface of the wafer W is modified (S03) by the modifying liquid R1. As a result, a modified region P10 that is modified to increase the contact angle is provided in a portion of the outer peripheral region outside the position facing the ring member 832 on the back surface of the wafer W. Since the annular modified region P10 is provided along the outer peripheral edge of the outer peripheral region of the wafer W, the developer D or the rinse liquid R2 that has flowed into the back surface of the wafer W does not drop from the wafer W in the modified region P10. Promoted. Therefore, it is possible to prevent the developer D from flowing inside the modified region P10. Also in the conventional substrate processing apparatus, the ring member 382 is provided inside the modified region P10. Therefore, the liquid seal Ds of the developer D formed using the ring member 382 prevents the developer D or the rinse liquid R2 from going around to the rear surface. However, when the amount of developer D that wraps around is large, it is conceivable that the wraparound using the liquid seal Ds may be sufficiently suppressed. In the substrate processing apparatus according to the present embodiment, the modified region P10 is provided outside the position facing the ring member 382, so that the excessive developing solution D or the rinse solution is further suppressed even in the modified region P10. can do.

In the substrate processing apparatus and substrate processing method described above, the region to be modified (modified region P10) is determined based on the information regarding the warp of the wafer W measured by the warp measurement unit 340 functioning as the warp information acquisition unit. area) can be set. By adopting such a configuration, it is possible to appropriately suppress the developer D or the rinse liquid R2 from flowing around according to the presence or absence of the warp of the wafer W and the magnitude of the warp. In addition, in the case where the developing solution D or the rinsing solution R2 is less likely to flow around (such as when the wafer W is warped in a convex shape), it becomes possible to narrow the region to be modified, resulting in an increase in cost, etc. can be prevented.

Further, in the substrate processing apparatus and substrate processing method described above, based on the warp information of the wafer W measured by the warp measuring unit 340 during development with the developer D, the difference between the back surface of the wafer W and the top surface 382a of the ring member 382 is determined. The position of the ring member 382 is adjusted so that the distance between them is H1. Therefore, even if the wafer W is warped, it is possible to appropriately suppress the developer D from flowing to the back side of the wafer W. FIG.

Further, the ring member 382 is lowered so that the distance H2 between the back surface of the wafer W and the top surface 382a of the ring member 382 is during the back surface cleaning with the rinse liquid R2. Therefore, it is possible to prevent the rinse liquid R2 from interfering with the ring member 382 and remaining there. Even if the distance H1 is between the back surface of the wafer W and the top surface 382a of the ring member 382, the distance H1 is appropriate. can be suppressed. However, by lowering the ring member 382 as in the present embodiment, it is possible to more reliably prevent the rinse liquid R2 from remaining in the ring member 382 .

[Modification]
Next, a substrate processing apparatus and a substrate processing method according to modifications will be described.

The reforming process may be performed by a method different from spraying the reforming liquid using the reforming liquid nozzle 360 . When the modification process is performed by attaching the modification liquid to the back surface of the wafer W, the modification liquid may be applied by applying the modification liquid instead of spraying the modification liquid. Also, the material to be modified may be a material having properties different from those of the liquid agent. The arrangement and configuration of the modification processing section can be changed according to the properties of the material to be modified.

In the above embodiment, the case where the modified region on the back surface of the wafer W is formed and the development process is performed in the developing unit U3 has been described. However, the modified region may be formed using a unit different from the developing unit U3. The place where the area to be modified on the back surface of the wafer W is set and where the set area is subjected to the modification process can be different from the place where the development process is performed.

If the modification process is performed at a location different from the development unit U3, the material used for modification can be changed. In the above embodiment, the case where the cationic surfactant is suitably used as the modifier for increasing the contact angle of the specific region on the outer periphery of the back surface of the wafer W has been described. This is because if the modifying agent is a cationic surfactant, when the modifying agent adheres to the wafer W and modifies the surface of the wafer W (increases the contact angle), by-products are not generated. Or, it is derived from the fact that even if it occurs, it does not affect the surrounding parts. When the modification processing is performed in the developing unit U3, there is a possibility that by-products may affect the development by the developer D or the like. On the other hand, when the modification process is performed in a place different from the developing unit U3, if the environment is such that there is no problem even if the by-product reacts with the modification process, a material different from the cationic surfactant is modified. Can be used as a pesticide. Modifiers that can be used when the modification treatment is performed at a location different from the developing unit U3 include, for example, silane coupling agents. Silane coupling agents include, for example, trimethylsilyldimethylamine (TMSDMA), hexamethyldisilazane (HMDS), trimethylsilyldiethylamine (TMSDEA), dimethyl(dimethylamino)silane (DMSDMA), 1,1,3,3-tetramethyl Examples include, but are not limited to, disilane (TMDS), polysilazane diluent, siloxane. In this way, by using the silane coupling agent to modify the surface of the back surface of the wafer W to increase the contact angle, the developing solution D (or the rinse solution R2) is prevented from running around to the back surface. good too.

Further, in the above embodiment, the case where the modified region P10 has an annular shape along the outer peripheral edge has been described, but the shape of the modified region P10 can be changed as appropriate. For example, the modified region P10 may be formed along the outer circumference of the wafer W in a broken line shape. Even when the modified region P10 is formed in the shape of a broken line, the developer D (or the rinse liquid R2) that has moved so as to pass through the modified region P10 is accelerated to drop due to a change in contact angle. wraparound is suppressed. In this way, even if the modified region P10 is not annularly formed, at least a portion outside the ring member 382 is modified, thereby suppressing the developer D (or the rinse liquid R2) from entering. It is possible. However, when the modified region P10 is annular, it is possible to effectively suppress the developer D (or rinse liquid R2) from going around.

Also, the device configuration of the developing unit U3 can be changed as appropriate. For example, the developing unit U3 may be further provided with a gas nozzle as a gas supply section for injecting air gas to the ring member 382 . The gas nozzles can be provided annularly on the guide member 381 , for example inside the ring member 382 . The gas nozzle is formed with gas ejection ports along the entire circumference, and can be configured to eject air gas to the entire circumference of the ring member 382 . In this case, for example, droplets of the rinse liquid R2 remaining on the ring member 382 can be removed by air gas after the back surface of the wafer W is cleaned with the rinse liquid R2. Therefore, it is possible to more reliably prevent droplets from remaining on the ring member 382 . Injection of air gas using a gas nozzle may be performed, for example, to remove the liquid seal Ds of the developer D described above.

In the above-described embodiment, the warp of the wafer W is measured by the warp measurement unit 340, which is a laser displacement gauge, and this information is acquired as warp information. However, the method of measuring the warp of the wafer W is not limited to this. For example, a camera may be used as the warp measurement unit 340 corresponding to the warp information acquisition unit, an image of the outer edge of the wafer W may be captured, and the amount of warp of the wafer W may be calculated from the captured image. Also, as the warp measuring unit 340, for example, a capacitance sensor or an ultrasonic sensor is used. In this case, the warp measurement unit 340 may be provided below the outer edge of the wafer W held by the spin chuck 300 . Also, the warp measuring section 340 may be provided outside the developing unit U3. In this manner, the arrangement of the warp information acquisition unit can be appropriately changed according to the method of acquiring information related to warpage acquired by the warp information acquisition unit. Moreover, the warpage information acquisition unit only needs to be able to acquire information related to warpage necessary for adjusting the size of the modified region P10 or the distance between the back surface of the wafer W and the top surface 382a of the ring member 382. FIG. Therefore, the warpage information acquisition unit may acquire information about warpage by a method different from the method of directly measuring the magnitude of warpage. Also, the timing of measuring the warp of the wafer W by the warp information acquisition unit can be changed as appropriate.

In the above-described embodiment, the developing unit U3 is provided with a single ring member 382, but a plurality of ring members 382 may be provided concentrically. Also, the plurality of ring members 382 may be configured to be vertically movable independently of each other, and the height thereof may be adjusted individually.

In the developing unit U3 of the above-described embodiment, so-called static development is performed by using the developer nozzle 320, which is a slit nozzle, to form a liquid puddle of the developer D on the surface of the wafer W without rotating the wafer W. However, rotational development may be performed. In the rotary development, for example, while the wafer W is being rotated by the spin chuck 300, the developing solution D is supplied to the central portion of the wafer W, and the developing solution D is spread over the entire surface of the wafer W by centrifugal force for development. By applying the configuration of the present disclosure to such rotary development, the above-described effects can be obtained.

Although the embodiments of the present disclosure have been described above, the present disclosure is not limited to such examples. It is obvious that a person skilled in the art can conceive of various modifications or modifications within the scope of the technical idea described in the claims, and these are naturally within the technical scope of the present disclosure. be understood to belong to

REFERENCE SIGNS LIST 1 Substrate processing system 2 Coating/developing apparatus (substrate processing apparatus) 11 to 14 Processing module 100 Control device 300 Spin chuck 320 Developer nozzle 330 Rinse nozzle 340 Warp Measuring part 350 Back rinse nozzle 360 Modifying liquid nozzle 381 Guide member 382 Ring member 383 Lifting part D Developer liquid R1 Modifying liquid R2, R3 Rinse liquid W ... wafer (substrate), U3 ... development unit.

Claims (13)

A substrate processing apparatus for processing a substrate,
a substrate holder that holds the substrate;
a processing liquid supply unit that supplies a developer to the surface of the substrate held by the substrate holding unit;
a ring member provided in an annular shape at a position facing the rear surface of the substrate held by the substrate holding part and having a diameter smaller than that of the substrate;
Before the developer is supplied by the processing liquid supply unit, at least a part of a region of the rear surface of the substrate that is on the outer peripheral side of the position facing the ring member while being held by the substrate holding unit. , a modification treatment portion that forms a modified region with a large contact angle with respect to the developer or rinse ;
A substrate processing apparatus having 2. The substrate processing apparatus according to claim 1, wherein said modified region is formed in an annular shape along the outer peripheral edge of said substrate. further comprising a warp information acquisition unit that acquires information related to the warp of the substrate;
3. The substrate processing apparatus according to claim 1, wherein said modification processor determines the size of said modified region based on the information acquired by said warpage information acquisition part. 4. The substrate processing apparatus according to claim 3, wherein said ring member can move up and down based on the information acquired by said warp information acquiring section. The substrate processing apparatus according to any one of claims 1 to 4, wherein the modifying processing section forms a modified region by attaching a modifying agent to the substrate. 6. The substrate processing apparatus according to claim 5, wherein said modifier is a cationic surfactant. A substrate processing method for processing a substrate,
A developer or a modification treatment step of forming a modified region having a larger contact angle with respect to the rinse liquid ;
a processing liquid supply step of supplying a developer onto the surface of the substrate held by the substrate holding part;
A substrate processing method comprising: 8. The substrate processing method according to claim 7, wherein said modified region is formed in an annular shape along the outer peripheral edge of said substrate. further comprising a warp information acquiring step of acquiring information relating to the warp of the substrate;
9. The substrate processing method according to claim 7, wherein in said modifying treatment step, the size of said modified region is determined based on information acquired in said warp information acquiring step. 10. The substrate processing method according to claim 9, wherein said ring member can move up and down based on the information acquired in said warpage information acquiring step. 11. The substrate processing method according to claim 7, wherein in said modifying treatment step, a modified region is formed by adhering a modifying agent to said substrate. 12. The substrate processing method according to claim 11, wherein said modifier is a cationic surfactant. 12. The substrate processing method according to claim 11, wherein said modifier is a silane coupling agent.

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