TWI565169B - 雷射二極體組件 - Google Patents

雷射二極體組件 Download PDF

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Publication number
TWI565169B
TWI565169B TW102107448A TW102107448A TWI565169B TW I565169 B TWI565169 B TW I565169B TW 102107448 A TW102107448 A TW 102107448A TW 102107448 A TW102107448 A TW 102107448A TW I565169 B TWI565169 B TW I565169B
Authority
TW
Taiwan
Prior art keywords
laser diode
layer
housing
mounting portion
diode assembly
Prior art date
Application number
TW102107448A
Other languages
English (en)
Chinese (zh)
Other versions
TW201349689A (zh
Inventor
玉威 史特拉
索奇 特努
阿瑞德 雷爾
卡史特恩 阿恩
科利摩恩斯 夫漢利葛
Original Assignee
歐司朗光電半導體公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 歐司朗光電半導體公司 filed Critical 歐司朗光電半導體公司
Publication of TW201349689A publication Critical patent/TW201349689A/zh
Application granted granted Critical
Publication of TWI565169B publication Critical patent/TWI565169B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/02208—Mountings; Housings characterised by the shape of the housings
    • H01S5/02212—Can-type, e.g. TO-CAN housings with emission along or parallel to symmetry axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/0237—Fixing laser chips on mounts by soldering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/17—Semiconductor lasers comprising special layers
    • H01S2301/176—Specific passivation layers on surfaces other than the emission facet
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02469—Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02476—Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0282—Passivation layers or treatments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
TW102107448A 2012-03-19 2013-03-04 雷射二極體組件 TWI565169B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102012102306.9A DE102012102306B4 (de) 2012-03-19 2012-03-19 Laserdiodenvorrichtung

Publications (2)

Publication Number Publication Date
TW201349689A TW201349689A (zh) 2013-12-01
TWI565169B true TWI565169B (zh) 2017-01-01

Family

ID=49043865

Family Applications (1)

Application Number Title Priority Date Filing Date
TW102107448A TWI565169B (zh) 2012-03-19 2013-03-04 雷射二極體組件

Country Status (3)

Country Link
CN (2) CN105406351B (de)
DE (1) DE102012102306B4 (de)
TW (1) TWI565169B (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9726820B2 (en) * 2014-08-14 2017-08-08 Raytheon Company End pumped PWG with tapered core thickness
KR102283169B1 (ko) * 2015-05-11 2021-07-30 사에스 게터스 에스.페.아. Led 시스템
US10050410B2 (en) * 2016-09-02 2018-08-14 Lumentum Operations Llc Coefficient of thermal expansion (CTE) matched transistor outline (TO) header
DE102017108435A1 (de) 2017-04-20 2018-10-25 Osram Opto Semiconductors Gmbh Halbleiterlaserdiode und Verfahren zur Herstellung einer Halbleiterlaserdiode

Citations (3)

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US5018820A (en) * 1990-03-02 1991-05-28 Gte Laboratories Incorporated Method of optically coupling an uptapered single-mode optical fiber to optoelectronic components
TW451535B (en) * 1998-09-04 2001-08-21 Sony Corp Semiconductor device and package, and fabrication method thereof
CN201303205Y (zh) * 2008-10-22 2009-09-02 华信光电科技股份有限公司 激光二极管装置

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NL257131A (de) 1959-10-23
JP2560131B2 (ja) * 1990-05-23 1996-12-04 ローム株式会社 半導体レーザ装置
JP2001135745A (ja) * 1999-11-05 2001-05-18 Shinko Electric Ind Co Ltd 半導体パッケージ用ステム、半導体パッケージ用アイレット、及び半導体パッケージ用アイレットの製造方法
JP4514376B2 (ja) * 2001-09-27 2010-07-28 シャープ株式会社 窒化物半導体レーザ装置
JP2004006824A (ja) * 2002-04-17 2004-01-08 Nichia Chem Ind Ltd 光半導体用パッケージ及びその製造方法
JP2005019973A (ja) * 2003-05-30 2005-01-20 Shinko Electric Ind Co Ltd 光半導体素子用ステムの製造方法
JP2005026291A (ja) * 2003-06-30 2005-01-27 Sharp Corp 窒化物系半導体発光装置およびその製造方法
JP2005101073A (ja) * 2003-09-22 2005-04-14 Neomax Material:Kk 半導体素子パッケージのステムおよび同ステム用クラッド材
JP4649172B2 (ja) * 2004-11-09 2011-03-09 新光電気工業株式会社 半導体パッケージ用ステムの製造方法
DE102005053274A1 (de) * 2005-09-30 2007-04-12 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen einer Mehrzahl von Halbleiterchips und Halbleiterbauelement
US8178893B2 (en) * 2005-12-28 2012-05-15 A. L. M. T. Corp. Semiconductor element mounting substrate, semiconductor device using the same, and method for manufacturing semiconductor element mounting substrate
JP4573863B2 (ja) * 2006-11-30 2010-11-04 三洋電機株式会社 窒化物系半導体素子の製造方法
US7907652B2 (en) * 2007-04-25 2011-03-15 Sanyo Electric Co., Ltd. Semiconductor laser device
US7929587B2 (en) * 2007-04-27 2011-04-19 Sanyo Electric Co., Ltd. Semiconductor laser diode element and method of manufacturing the same
JP5150149B2 (ja) * 2007-07-03 2013-02-20 シャープ株式会社 窒化物半導体発光素子および窒化物半導体発光素子の製造方法
JP5014967B2 (ja) * 2007-12-06 2012-08-29 シャープ株式会社 発光素子及び発光素子の製造方法
JP5184927B2 (ja) * 2008-03-21 2013-04-17 パナソニック株式会社 窒化物半導体発光素子および窒化物半導体発光素子の製造方法
CN201417884Y (zh) * 2009-05-19 2010-03-03 唐福云 激光二极管外壳封装管座
JP5383313B2 (ja) * 2009-05-20 2014-01-08 パナソニック株式会社 窒化物半導体発光装置
JP5368957B2 (ja) * 2009-12-04 2013-12-18 シャープ株式会社 半導体レーザチップの製造方法
JP2011151080A (ja) * 2010-01-19 2011-08-04 Sharp Corp 半導体レーザ装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5018820A (en) * 1990-03-02 1991-05-28 Gte Laboratories Incorporated Method of optically coupling an uptapered single-mode optical fiber to optoelectronic components
TW451535B (en) * 1998-09-04 2001-08-21 Sony Corp Semiconductor device and package, and fabrication method thereof
CN201303205Y (zh) * 2008-10-22 2009-09-02 华信光电科技股份有限公司 激光二极管装置

Also Published As

Publication number Publication date
DE102012102306B4 (de) 2021-05-12
DE102012102306A1 (de) 2013-09-19
CN103326233B (zh) 2016-01-06
TW201349689A (zh) 2013-12-01
CN105406351B (zh) 2019-05-17
CN105406351A (zh) 2016-03-16
CN103326233A (zh) 2013-09-25

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