TWI564956B - And a method of operating the plasma processing apparatus and the plasma processing apparatus - Google Patents
And a method of operating the plasma processing apparatus and the plasma processing apparatus Download PDFInfo
- Publication number
- TWI564956B TWI564956B TW103120834A TW103120834A TWI564956B TW I564956 B TWI564956 B TW I564956B TW 103120834 A TW103120834 A TW 103120834A TW 103120834 A TW103120834 A TW 103120834A TW I564956 B TWI564956 B TW I564956B
- Authority
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- Taiwan
- Prior art keywords
- signal
- filter
- change
- plasma processing
- processing apparatus
- Prior art date
Links
- 238000012545 processing Methods 0.000 title claims description 95
- 238000000034 method Methods 0.000 title claims description 44
- 238000013213 extrapolation Methods 0.000 claims description 38
- 230000008569 process Effects 0.000 claims description 26
- 230000004044 response Effects 0.000 claims description 6
- 238000011017 operating method Methods 0.000 claims description 3
- 230000008859 change Effects 0.000 description 104
- 238000005530 etching Methods 0.000 description 27
- 238000001514 detection method Methods 0.000 description 23
- 239000007795 chemical reaction product Substances 0.000 description 21
- 239000010408 film Substances 0.000 description 20
- 238000004020 luminiscence type Methods 0.000 description 17
- 238000010586 diagram Methods 0.000 description 12
- 239000011159 matrix material Substances 0.000 description 12
- 239000004065 semiconductor Substances 0.000 description 10
- 238000012937 correction Methods 0.000 description 9
- 239000000463 material Substances 0.000 description 8
- 238000004364 calculation method Methods 0.000 description 6
- 238000005070 sampling Methods 0.000 description 6
- 238000009826 distribution Methods 0.000 description 5
- 239000013307 optical fiber Substances 0.000 description 5
- 230000009467 reduction Effects 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- 238000000605 extraction Methods 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 239000006185 dispersion Substances 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000005457 optimization Methods 0.000 description 3
- 230000002123 temporal effect Effects 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 239000004615 ingredient Substances 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 238000012935 Averaging Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000006399 behavior Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000002372 labelling Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
- H01J37/32972—Spectral analysis
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
- H01J37/32963—End-point detection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32908—Utilities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/3299—Feedback systems
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/02—Details
- H01J2237/026—Shields
- H01J2237/0266—Shields electromagnetic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/244—Detection characterized by the detecting means
- H01J2237/2445—Photon detectors for X-rays, light, e.g. photomultipliers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
- H01J2237/3341—Reactive etching
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013149020A JP6239294B2 (ja) | 2013-07-18 | 2013-07-18 | プラズマ処理装置及びプラズマ処理装置の運転方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201511128A TW201511128A (zh) | 2015-03-16 |
| TWI564956B true TWI564956B (zh) | 2017-01-01 |
Family
ID=52319558
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW103120834A TWI564956B (zh) | 2013-07-18 | 2014-06-17 | And a method of operating the plasma processing apparatus and the plasma processing apparatus |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US9767997B2 (cg-RX-API-DMAC7.html) |
| JP (1) | JP6239294B2 (cg-RX-API-DMAC7.html) |
| KR (1) | KR101656745B1 (cg-RX-API-DMAC7.html) |
| CN (1) | CN104299880B (cg-RX-API-DMAC7.html) |
| TW (1) | TWI564956B (cg-RX-API-DMAC7.html) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6239294B2 (ja) * | 2013-07-18 | 2017-11-29 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置及びプラズマ処理装置の運転方法 |
| JP6523732B2 (ja) * | 2015-03-26 | 2019-06-05 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置およびプラズマ処理方法 |
| JP6650258B2 (ja) * | 2015-12-17 | 2020-02-19 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置及びプラズマ処理装置の運転方法 |
| BE1025251B1 (nl) * | 2017-05-22 | 2018-12-18 | Soleras Advanced Coatings Bvba | Feedback systeem |
| EP3424433A1 (en) * | 2017-07-06 | 2019-01-09 | Koninklijke Philips N.V. | Methods and systems for processing an ultrasound image |
| JP7096079B2 (ja) * | 2018-06-15 | 2022-07-05 | キオクシア株式会社 | プラズマ処理装置の再生装置 |
| JP6804694B1 (ja) * | 2019-02-08 | 2020-12-23 | 株式会社日立ハイテク | エッチング処理装置、エッチング処理方法および検出器 |
| US11569135B2 (en) | 2019-12-23 | 2023-01-31 | Hitachi High-Tech Corporation | Plasma processing method and wavelength selection method used in plasma processing |
| US12074076B2 (en) * | 2020-03-11 | 2024-08-27 | Hitachi High-Tech Corporation | Plasma processing apparatus and plasma processing method |
| WO2022059114A1 (ja) * | 2020-09-17 | 2022-03-24 | 株式会社日立ハイテク | プラズマ処理装置およびプラズマ処理方法 |
Citations (3)
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| US20050134835A1 (en) * | 2003-12-19 | 2005-06-23 | Kim Yong-Jin | Methods of determining an etching end point based on compensation for etching distubances |
| US20090089024A1 (en) * | 2007-09-28 | 2009-04-02 | Chung-Ho Huang | Methods and arrangement for creating models for fine-tuning recipes |
| US20120091097A1 (en) * | 2010-10-18 | 2012-04-19 | Tokyo Electron Limited | Using Vacuum Ultra-Violet (VUV) Data in Radio Frequency (RF) Sources |
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-
2013
- 2013-07-18 JP JP2013149020A patent/JP6239294B2/ja active Active
-
2014
- 2014-06-17 TW TW103120834A patent/TWI564956B/zh active
- 2014-07-16 US US14/333,502 patent/US9767997B2/en active Active
- 2014-07-17 CN CN201410341799.0A patent/CN104299880B/zh active Active
- 2014-07-17 KR KR1020140090166A patent/KR101656745B1/ko active Active
-
2017
- 2017-08-15 US US15/677,260 patent/US11424110B2/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050134835A1 (en) * | 2003-12-19 | 2005-06-23 | Kim Yong-Jin | Methods of determining an etching end point based on compensation for etching distubances |
| US20090089024A1 (en) * | 2007-09-28 | 2009-04-02 | Chung-Ho Huang | Methods and arrangement for creating models for fine-tuning recipes |
| US20120091097A1 (en) * | 2010-10-18 | 2012-04-19 | Tokyo Electron Limited | Using Vacuum Ultra-Violet (VUV) Data in Radio Frequency (RF) Sources |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104299880A (zh) | 2015-01-21 |
| CN104299880B (zh) | 2017-11-10 |
| US20150021294A1 (en) | 2015-01-22 |
| JP6239294B2 (ja) | 2017-11-29 |
| US20170372878A1 (en) | 2017-12-28 |
| KR101656745B1 (ko) | 2016-09-12 |
| US11424110B2 (en) | 2022-08-23 |
| KR20150010627A (ko) | 2015-01-28 |
| US9767997B2 (en) | 2017-09-19 |
| TW201511128A (zh) | 2015-03-16 |
| JP2015023104A (ja) | 2015-02-02 |
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