TWI564948B - Hard and brittle materials for grinding, grinding processing systems and grinding, grinding methods - Google Patents
Hard and brittle materials for grinding, grinding processing systems and grinding, grinding methods Download PDFInfo
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- TWI564948B TWI564948B TW100141025A TW100141025A TWI564948B TW I564948 B TWI564948 B TW I564948B TW 100141025 A TW100141025 A TW 100141025A TW 100141025 A TW100141025 A TW 100141025A TW I564948 B TWI564948 B TW I564948B
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- 239000000463 material Substances 0.000 title claims description 107
- 238000000034 method Methods 0.000 title claims description 97
- 238000005498 polishing Methods 0.000 claims description 463
- 239000006061 abrasive grain Substances 0.000 claims description 114
- 238000005520 cutting process Methods 0.000 claims description 89
- 230000008569 process Effects 0.000 claims description 68
- 239000002344 surface layer Substances 0.000 claims description 53
- 230000003746 surface roughness Effects 0.000 claims description 47
- 238000005259 measurement Methods 0.000 claims description 43
- 239000002245 particle Substances 0.000 claims description 43
- 239000010410 layer Substances 0.000 claims description 34
- 238000011068 loading method Methods 0.000 claims description 27
- 238000007517 polishing process Methods 0.000 claims description 26
- 238000003825 pressing Methods 0.000 claims description 25
- 239000004575 stone Substances 0.000 claims description 21
- 239000012535 impurity Substances 0.000 claims description 18
- 238000003754 machining Methods 0.000 claims description 18
- 238000004519 manufacturing process Methods 0.000 claims description 13
- 230000009471 action Effects 0.000 claims description 6
- 230000007246 mechanism Effects 0.000 claims description 5
- 239000003082 abrasive agent Substances 0.000 claims description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 2
- 125000006850 spacer group Chemical group 0.000 claims 1
- 239000013078 crystal Substances 0.000 description 79
- 235000012431 wafers Nutrition 0.000 description 48
- 229910052594 sapphire Inorganic materials 0.000 description 34
- 239000010980 sapphire Substances 0.000 description 34
- 230000006870 function Effects 0.000 description 25
- 229910052732 germanium Inorganic materials 0.000 description 16
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 16
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 9
- 229910052707 ruthenium Inorganic materials 0.000 description 9
- 238000005336 cracking Methods 0.000 description 8
- 239000011362 coarse particle Substances 0.000 description 7
- 230000002950 deficient Effects 0.000 description 7
- 239000000047 product Substances 0.000 description 7
- 239000010432 diamond Substances 0.000 description 6
- 229910003460 diamond Inorganic materials 0.000 description 6
- 230000002093 peripheral effect Effects 0.000 description 5
- 229910052797 bismuth Inorganic materials 0.000 description 4
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 229910052715 tantalum Inorganic materials 0.000 description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 4
- 239000010419 fine particle Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000007670 refining Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 210000003298 dental enamel Anatomy 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000004513 sizing Methods 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 238000009395 breeding Methods 0.000 description 1
- 230000001680 brushing effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002893 slag Substances 0.000 description 1
- 238000000638 solvent extraction Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B9/00—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor
- B24B9/02—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground
- B24B9/06—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain
- B24B9/065—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain of thin, brittle parts, e.g. semiconductors, wafers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B29/00—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B29/00—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents
- B24B29/005—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents using brushes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/02—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent
- B24B49/04—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent involving measurement of the workpiece at the place of grinding during grinding operation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B9/00—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor
- B24B9/02—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground
- B24B9/06—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
- Grinding Of Cylindrical And Plane Surfaces (AREA)
Description
本發明係關於以用來以切片加工製造晶圓之硬脆性材料為被加工物之研削加工與研磨加工者。特別是關於除去被加工物之表層部之變形或微裂痕之硬脆性材料之研削研磨加工系統及研削研磨方法。The present invention relates to a grinding process and a grinding process for a workpiece using a hard brittle material for manufacturing a wafer by slicing. In particular, the grinding and polishing system and the grinding and polishing method for hard and brittle materials which remove deformation or micro-cracks of the surface layer portion of the workpiece.
於製造晶圓之素材之錠之表層部有因溶融加熱而發生之雜質附著或有變形發生,於將該錠切斷而形成之塊體之表層部有該切斷導致之變形與微裂痕發生。因此,於次步驟於切片加工為最終製品之晶圓時,可能會有破裂或缺口導致之製品不良發生。針對上述問題,有進行為了將前述塊體之表層部之變形除去以將晶圓之外形尺寸調整為規格內之研削加工、進行前述錠或塊體之表層部之微裂痕之除去與表面粗度之微細化以減低將該錠或塊體切片加工時之破裂或缺口之研磨加工之必要。In the surface layer portion of the ingot for manufacturing the wafer material, impurities or deformation due to melting and heating occur, and the surface layer portion of the block formed by cutting the ingot is deformed by the cutting and microcracking occurs. . Therefore, when the wafer is processed into a wafer of the final product in the second step, there may be defects in the product caused by cracks or nicks. In order to solve the above problems, it is necessary to remove the deformation of the surface layer portion of the block to adjust the outer dimensions of the wafer to the grinding process within the specification, and to remove the microcrack and the surface roughness of the surface portion of the ingot or the block. The miniaturization is necessary to reduce the grinding process of the crack or the notch when the ingot or the block is processed.
用於半導體基板等之晶圓係經過以下之A、B、C之步驟而獲得。A wafer used for a semiconductor substrate or the like is obtained by the following steps A, B, and C.
步驟A:將成為原料之物質成型,以拉升法(CZ法)、伯努利法、水熱育成法等形成錠之步驟。Step A: a step of forming an ingot into a raw material, and forming an ingot by a pulling method (CZ method), a Bernoulli method, a hydrothermal breeding method, or the like.
步驟B:將前述錠對應於必要以帶鋸或線鋸等切斷為適度之大小,再對應於必要調整形狀以形成塊體之步驟。Step B: The above-mentioned ingot is required to be cut into a moderate size by a band saw or a wire saw or the like, and corresponds to a step of adjusting the shape to form a block.
步驟C:將前述塊體切割以獲得晶圓之步驟。Step C: The step of cutting the aforementioned block to obtain a wafer.
以製造矽晶圓為例,說明角柱狀矽塊之製造方法。於矽塊之製造有:將溶融原料流入成形模具,將成形為立方體形狀之矽錠之表層部(6面)以帶鋸或線鋸切斷除去後,將剖面切斷為四角形而彼此直角地相交之4側面部與其4角部形成有微小之平面(去角加工部)之結晶構造由多結晶構成之矽塊、將以拉升法(CZ法)或伯努利法等製造為圓柱形狀之矽錠之頂部與尾部切斷後於胴體表層部與柱軸平行且彼此形成直角之4側面部與於該4側面部相交之位置(稜)為前述圓柱表層部之一部分之微小之圓弧面殘留而形成有4角部之結晶構造由單結晶構成之角柱狀之矽塊兩種。A method of manufacturing a prismatic column is described by taking a silicon wafer as an example. In the production of the crucible, the molten raw material is flowed into the forming mold, and the surface layer portion (6 surfaces) of the ingot formed into a cubic shape is cut by a band saw or a wire saw, and then the cross section is cut into a square shape and at right angles to each other. The side surface of the intersection of the four side portions and the four corner portions thereof is formed with a microscopic plane (the chamfered portion), and the crystal structure is composed of a polycrystalline crystal, and is formed into a cylindrical shape by a lift method (CZ method) or Bernoulli method. After the top and the tail of the crucible are cut, the side surface portion of the crucible surface portion parallel to the column axis and forming a right angle with each other and the position (edge) intersecting the four side portions are minute arc faces of a part of the cylindrical surface portion. There are two types of lumps in which a crystal structure having four corners is formed by a single crystal.
於前述矽塊之表層部係在上述兩種皆於切斷加工時有變形或微裂痕發生,因此於次步驟於為了使成為晶圓而切片加工時,會有破裂或缺口導致之不良製品發生。因此,於進行切片加工前有施加研磨加工以進行前述微裂痕之除去與表面粗度之微細化之必要。In the surface layer of the above-mentioned block, deformation or micro-cracking occurs during the cutting process. Therefore, in the second step, in order to slice the wafer, the defective product may be broken or notched. . Therefore, it is necessary to apply a polishing process before the slicing process to remove the microcracks and to refine the surface roughness.
前述角柱狀之矽塊之大小有剖面125mm*125mm之正方形(稱呼:5英吋)、156mm*156mm之正方形(稱呼:6英吋)、210mm*210mm之正方形(稱呼:8英吋)3種,柱軸方向之長度係在150~600mm之間任意設定。The size of the above-mentioned corner-shaped block has a square of 125 mm*125 mm (called 5 inches), a square of 156 mm*156 mm (called 6 inches), and a square of 210 mm*210 mm (called 8 inches). The length in the column axis direction is arbitrarily set between 150 and 600 mm.
此外,做為塊體之其他形狀有圓柱狀。做為由圓柱狀之塊體製造晶圓之一例,說明以藍寶石錠(鑄塊)製造藍寶石晶圓之方法。藍寶石錠係於其表層部有於加熱溶融時發生之溶融渣等雜質之附著或凹凸、變形等。於將此等雜質之附著或凹凸、變形除去而將外徑尺寸研削為所欲尺寸時,於其表層部會有微裂痕發生。因此,與前述矽塊同樣地,為了使次步驟中之晶圓之破裂、缺口導致之不良製品之發生率降低,於進行切片加工前有施加研磨加工以進行前述微裂痕之除去與表面粗度之微細化之必要。In addition, other shapes as a block have a cylindrical shape. As an example of manufacturing a wafer from a cylindrical block, a method of manufacturing a sapphire wafer from a sapphire ingot (ingot) is described. The sapphire ingot has adhesion, irregularities, deformation, and the like of impurities such as molten slag which occur when heated and melted in the surface layer portion. When the adhesion, unevenness, and deformation of these impurities are removed and the outer diameter is ground to a desired size, micro-cracks occur in the surface layer portion. Therefore, similarly to the above-described block, in order to reduce the incidence of defective products due to cracking or chipping in the secondary step, a grinding process is performed to perform the removal of the microcracks and the surface roughness before the slicing process. The need for miniaturization.
前述之由單結晶構成之藍寶石錠之大小一般係直徑為2~6英吋(51~154mm)、長度為50~300mm者。The size of the sapphire ingot composed of the single crystal described above is generally 2 to 6 inches (51 to 154 mm) in diameter and 50 to 300 mm in length.
此外,做為由異形狀之塊體製造晶圓之一例,說明由水晶藍伯特製造水晶晶圓之方法。水晶藍伯特係藉由以水熱育成法等使結晶成長而獲得人工水晶後為了使前述人工水晶之軸方向明確而將表面研削(藍伯特加工)而獲得。其後,經過將藍伯特加工後之人工水晶配合頻率特性以既定角度切薄之步驟、將切割後之人工水晶間(例如50~70片)以蠟等貼合而形成塊狀體之步驟、為了將前述塊狀體之外形調製為調製為做為晶圓之外形之尺寸之步驟、將前述蠟等去除之步驟,可獲得水晶晶圓。前述水晶藍伯特係如圖20所示,有兩端面並非水平之場合。Further, as an example of manufacturing a wafer from a block of a different shape, a method of manufacturing a crystal wafer by Crystal Lambert will be described. Crystal Blue Burt is obtained by growing crystals by hydrothermal growth or the like to obtain artificial crystals, and then grinding the surface (Lambert processing) in order to clarify the axial direction of the artificial crystal. Thereafter, the step of forming the block by bonding the artificial crystals processed by the Lambert to the frequency characteristics at a predetermined angle and laminating the cut artificial crystals (for example, 50 to 70 sheets) with wax or the like to form a block body A crystal wafer can be obtained in order to modulate the shape of the block into a step of modulating the size of the wafer to be removed, and removing the wax or the like. The crystal blue Bert is shown in Fig. 20, and there are cases where both end faces are not horizontal.
於水晶藍伯特之表層部有於由人工水晶研削之際產生之微裂痕存在。與將前述矽塊或藍寶石錠切片加工之場合同樣地,為了於切片加工時使晶圓之破裂、缺口導致之不良製品之發生率降低,於進行切片加工前有施加研磨加工以進行前述微裂痕之除去與表面粗度之微細化之必要。In the surface layer of Crystal Lambert, there are micro-cracks that occur when artificial crystals are ground. In the same manner as in the case of slicing the above-mentioned clam block or sapphire ingot, in order to reduce the incidence of defective products due to cracking or chipping during slicing, a grinding process is performed to perform the microcrack before the slicing process. It is necessary to remove the miniaturization of the surface roughness.
針對將此等之表層部之變形或微裂痕除去以使因為了使成為晶圓之切片加工而發生之破裂、缺口導致之不良製品之發生率降低之先前技術說明。The prior art description of the deformation or microcracks of the surface layer portions is removed to reduce the incidence of defective products due to cracking or chipping which occurs in the wafer processing.
於日本專利第3649393號公報有揭示關於從立方體形狀之多結晶矽錠切出為角柱狀而形成之多結晶矽塊之表面加工。有記載於將矽塊切片加工而使成為矽晶圓前將矽塊之側面部使用機械式地混入有磨粒之樹脂刷來研磨以將微小之凹凸平坦化以使表面粗度成為Ry為8μm以下。The surface processing of a polycrystalline germanium block formed by cutting a cube-shaped polycrystalline germanium into a prismatic column is disclosed in Japanese Patent No. 3,649,393. It is described that the tantalum piece is sliced and the side surface of the block is mechanically mixed with the abrasive grain by a resin brush before being used as a tantalum wafer, and the fine unevenness is flattened so that the surface roughness becomes R μ 8 μm. the following.
然而,關於於將矽錠切斷之際發生之表層面之變形或微裂痕及其除去並沒有記載。However, there is no description about the deformation or micro-cracking of the surface layer which occurs when the crucible is cut.
於日本專利第4133935號公報有記載將使用帶鋸切斷為既定長度之矽錠在將胴體表層部使用圓筒研削裝置研削為圓柱狀而除去起伏後將該胴體表層部之4方使用帶鋸切斷除去而使成為形成有4側面部之四角柱狀之矽塊,藉由將該矽塊之4側面部平坦化之前之表面粗度為Xμm(在實施例係Ry10~20μm)時使平坦化之研磨量為5*Xμm以上(在實施例係研磨量100μm)來研磨,表面粗度微細化(在實施例係成為Ry3~4μm)且微裂痕之除去亦可達成,將該矽塊切片加工而使成為矽晶圓之際之破裂不良降低率改善6倍以上。Japanese Patent No. 4,133,935 discloses a ruthenium ingot which is cut into a predetermined length by using a band saw. The enamel surface layer portion is ground into a cylindrical shape by a cylindrical grinding device to remove the undulation, and the band surface portion of the enamel body is band saw. The ridge block having a quadrangular prism shape in which the four side surface portions are formed is cut and removed, and the surface roughness before flattening the side surface portions of the dam pieces is X μm (in the embodiment, Ry 10 to 20 μm). The amount of polishing is 5*X μm or more (in the embodiment, the polishing amount is 100 μm), and the surface roughness is refined (in the embodiment, Ry 3 to 4 μm), and the removal of microcracks can be achieved. The processing reduces the rate of failure of cracking when the wafer is formed by a factor of six or more.
於日本特開2005-255463號公報係記載為了將單結晶藍寶石錠切片加工獲得所欲外徑之晶圓而將該單結晶藍寶石錠之外周部使用圓筒研削裝置研削加工為圓柱狀並進行外徑尺寸之調製。由於該研削加工而於前述單結晶藍寶石錠之外周部有加工變形或微裂痕發生,故於將該單結晶藍寶石錠切片加工之前,將該單結晶藍寶石錠之外周部化學研磨以除去前述加工變形或微裂痕。Japanese Laid-Open Patent Publication No. 2005-255463 discloses that a single crystal sapphire ingot is sliced to obtain a desired outer diameter wafer, and the outer peripheral portion of the single crystal sapphire ingot is ground into a cylindrical shape by a cylindrical grinding device. Modulation of the diameter size. Since the grinding process is performed on the outer peripheral portion of the single crystal sapphire ingot, and the outer peripheral portion of the single crystal sapphire ingot is chemically ground to remove the processing distortion before the single crystal sapphire ingot is sliced. Or micro cracks.
於晶圓用之硬脆性材料之切斷方法係如前述有利用帶鋸或線鋸之方法,理想地使用以複數條線來切斷之線鋸。The cutting method of the hard and brittle material for the wafer is as described above using a band saw or a wire saw, and it is desirable to use a wire saw cut by a plurality of wires.
以往之線鋸之切斷方法係以壓力水之噴射壓將磨粒往切斷部吹送並使線接觸旋轉而切斷之游離磨粒方式為一般,但近年開發於線將磨粒固定之新線鋸,可將切斷時間大幅縮短。In the prior art, the cutting method of the wire saw is a method in which the abrasive grains are blown to the cutting portion by the jet pressure of the pressurized water, and the free abrasive grains are cut by the contact of the wire. However, in recent years, the wire is fixed in the wire. The wire saw can greatly shorten the cutting time.
發明者們為了將前述新線鋸之切斷能力與以往之線鋸比較確認,將多結晶矽錠如圖15所示切斷為縱5列*橫5列=計25條、剖面(稱呼)6英吋角(一邊之尺寸:156.0mm)、長度300mm之塊體。於切斷需要之時間在以往之線鋸需要8Hr以上,但以新線鋸可以約3Hr結束,確認可將其切斷時間大幅縮短。In order to compare the cutting ability of the new wire saw with the conventional wire saw, the inventors cut the polycrystalline ruthenium ingot into five columns in the vertical direction and five columns in the horizontal direction as shown in Fig. 15 = 25 pieces, and a section (referential) 6 inch angle (one side size: 156.0mm), length 300mm block. The time required for the cutting is 8Hr or more in the conventional wire saw, but the new wire saw can be finished at about 3Hr, and it is confirmed that the cutting time can be greatly shortened.
做為可將前述切斷時間縮短之理由係推測如下。亦即,在以往之游離磨粒方式之線鋸係於切斷加工時若使線高速旋轉則磨粒會飛散而切斷效率降低。在新線鋸係磨粒固定於線故沒有伴隨引線之旋轉之磨粒之飛散而可效率良好地切斷。The reason why the cutting time can be shortened is presumed as follows. In other words, in the conventional wire-saw type of the free-abrasive type, when the wire is rotated at a high speed during the cutting process, the abrasive grains are scattered and the cutting efficiency is lowered. Since the new wire sawing abrasive grain is fixed to the wire, the abrasive grains which are not accompanied by the rotation of the wire are scattered, and the cutting can be efficiently performed.
然而,以前述新線鋸將多結晶矽錠切斷之場合,於圖15顯示之位於四角之A之4條塊體與位於A間之B之3條*4=12條之塊體係切斷前之矽錠之面對外側之側面部(於A之塊體係2面,於B之塊體係1面)之中央如圖16所示在往外側膨脹之狀態下切斷。在單結晶矽錠係如圖17所示分別獨立切斷,故如圖18所示單結晶矽塊之4側面部之中央在往外側膨脹之狀態下切斷,發生其剖面尺寸不再規定尺寸公差內之新問題。因此,要求矽塊之側面之變形除去與限入規定尺寸公差內之研削裝置。However, in the case where the polycrystalline tantalum ingot is cut by the above-mentioned new wire saw, the block block of the four corners of the four corners shown in Fig. 15 and the three strips of the four sheets of A*4=12=12 are cut off. The center of the side surface of the front side of the bismuth ingot (on the side of the block system of A, and the surface of the block system of B) is cut as shown in Fig. 16 in the state of being expanded outward. In the case where the single crystal bismuth ingots are independently cut as shown in Fig. 17, the center of the side portion of the single crystal lumps shown in Fig. 18 is cut in the state of being expanded outward, and the cross-sectional dimension thereof is no longer specified. New problems within. Therefore, the deformation of the side of the block is required to remove and limit the grinding device within the specified dimensional tolerances.
此外,於由矽錠切斷形成之矽塊係於切斷過程中,於其側面部與角部之表層部有表面粗度Ry10~20μm(JISR0601:1994)前後之凹凸與從表層面深度80~100μm之微裂痕發生。在將此種塊體切片加工為10μm~100μm前後之厚度以使成為晶圓時,可能有塊體之表面粗度與微裂痕為原因而於晶圓有破裂、缺口發生。因此,要求於切片加工前將微裂痕除去並使表面粗度為數μm以下之研磨裝置。Further, the slab formed by the bismuth ingot is cut during the cutting process, and has a surface roughness of Ry10 to 20 μm (JISR0601:1994) and a depth of 80 from the surface layer at the surface portion of the side surface portion and the corner portion. Micro-cracks of ~100 μm occur. When such a block is processed into a thickness of 10 μm to 100 μm before and after the wafer is formed into a wafer, the surface roughness and microcracks of the block may cause cracks and chipping in the wafer. Therefore, a polishing apparatus which removes microcracks before the slicing process and has a surface roughness of several μm or less is required.
此外,要求將前述研削裝置與研磨裝置之各步驟效率良好地實施之研削研磨加工系統與研削研磨方法。Further, a grinding and polishing system and a grinding and polishing method which are performed efficiently by the steps of the grinding device and the polishing device are required.
本發明係以解決前述要求事項並提供將錠切斷為四角柱狀而形成之塊體(例如矽塊)之側面部與角部研削而將剖面尺寸加工為所欲尺寸之研削裝置或將剖面形狀為大致圓形之錠之頂部與尾部切斷而形成為圓柱狀之錠(例如,單結晶藍寶石錠)之外周部之因溶融加熱而發生之變形或雜質除去而將剖面尺寸加工為所欲尺寸之研削裝置或將異形狀之塊體(例如水晶藍伯特)之側面部與角部研削之研削裝置、將結束前述研削之被加工物之表層部之微裂痕之除去與將表面粗糙度微細化之研磨裝置並設之硬脆性材料研削研磨系統、研削研磨加工方法、具備控制前述研削裝置與研磨裝置之控制手段而使加工效率提升之柱形狀之硬脆性材料之研削研磨加工系統、研削研磨加工方法為目的。The present invention solves the above-mentioned problems and provides a grinding device or a section which is formed by cutting a side surface portion and a corner portion of a block (for example, a block) formed by cutting a bar to a square column shape, and processing the cross-sectional size into a desired size. The shape of a substantially circular ingot and the shape of a cylindrical ingot (for example, a single crystal sapphire ingot) are deformed by melt heating or impurity removal at the outer periphery of the ingot, and the cross-sectional dimension is processed into a desired shape. The size of the grinding device, the grinding device for grinding the side portion and the corner portion of the block of a different shape (for example, Crystal Lambert), the removal of the microcrack of the surface portion of the workpiece to be finished, and the surface roughness A grinding and polishing system of a hard and brittle material, a grinding and polishing method, and a grinding and polishing system for grinding a hard and brittle material having a column shape that improves the processing efficiency by controlling the grinding device and the polishing device, and grinding The grinding process is for the purpose.
為了達成上述目的,本發明之第1態樣之硬脆性材料之研削研磨加工系統係例如圖1、圖2、圖5所示,一種硬脆性材料之研削研磨加工系統,將由用來以切片加工製造晶圓之硬脆性材料構成之柱狀之被加工物研削與研磨,其特徵在於具備:將被加工物(W)之表層部以一定之切入量研削、將該被加工物(W)之表層部之雜質與柱軸方向之變形除去並使剖面尺寸成為所欲尺寸之研削裝置(1)且具有量測被加工物(W)之尺寸之量測手段(18)之研削裝置(1);將結束前述研削之被加工物(W)之表層部以一定之按壓力研磨、除去該被加工物(W)之表層部之微裂痕並使表面粗糙度微細化之研磨裝置(2)且具有量測被加工物(W)之尺寸之量測手段(18)之研磨裝置(2);運算以前述量測手段(18)量測之被加工物(W)之尺寸,根據前述運算之結果輸出前述研削裝置(1)之作動信號與前述研磨裝置(2)之作動信號之控制手段。In order to achieve the above object, a grinding and polishing system for a hard and brittle material according to a first aspect of the present invention is, for example, shown in Figs. 1, 2, and 5, and a grinding and polishing system for a hard and brittle material is used for slicing. Grinding and polishing of a columnar workpiece formed of a hard brittle material of a wafer, characterized in that the surface layer portion of the workpiece (W) is ground at a constant cutting amount, and the workpiece (W) is processed. Grinding device (1) of measuring means (18) for measuring the size of the workpiece (W) by removing the impurities in the surface portion and the deformation of the column axis and making the cross-sectional dimension into the desired size of the grinding device (1) a polishing apparatus (2) that finishes the surface layer portion of the workpiece (W) to be ground by a predetermined pressing force, removes micro-cracks in the surface layer portion of the workpiece (W), and refines the surface roughness. a grinding device (2) having a measuring means (18) for measuring the size of the workpiece (W); calculating a size of the workpiece (W) measured by the measuring means (18), according to the calculation As a result, the actuation signal of the aforementioned grinding device (1) and the operation of the aforementioned polishing device (2) are output. Signal control means.
根據第1態樣,由於具備對被加工物設定一定之切入量(屬於學術用語:「定尺寸切入」)切削被加工物之變形而整理形狀並將剖面尺寸研削為所欲尺寸之研削裝置、對被加工物設定一定之按壓力導致之切入量(屬於學術用語:「定壓切入」)研磨被加工物之表層部之研磨裝置,故提供可將剖面尺寸與剖面形狀加工為所欲公差內且可確實除去表層部之微裂痕並將表面粗度微細化之硬脆性材料之研削研磨加工系統。此外,以設於研削裝置或研磨裝置之量測手段量測被加工物之尺寸,將其量測結果以控制手段運算並輸出研削裝置或研磨裝置之作動信號,故可進行基於量測之尺寸之正確之研削研磨加工。According to the first aspect, it is possible to set a cutting amount (which is an academic term: "scheduled cutting") for cutting a workpiece, and to cut the shape of the workpiece, and to shape the shape and grind the cross-sectional size into a desired size. By setting a certain amount of cutting force (the academic term: "constant cutting") to the workpiece to grind the surface portion of the workpiece, it is possible to machine the cross-sectional dimension and the cross-sectional shape to the desired tolerance. Moreover, the grinding and polishing system of the hard and brittle material which can remove the micro-cracks of the surface layer portion and refine the surface roughness can be surely obtained. In addition, the size of the workpiece is measured by a measuring device provided in the grinding device or the grinding device, and the measurement result is calculated by a control means and outputted as an actuation signal of the grinding device or the grinding device, so that the size based on the measurement can be performed. The correct grinding and grinding process.
在本發明之第2態樣之研削研磨加工系統係例如圖21所示,至少具備1以上之具備下述手段的研削研磨裝置:量測被加工物之尺寸之量測手段;將被加工物(W)之表層部以一定之切入量研削、將該被加工物之表層部之雜質與柱軸方向之變形除去並使剖面尺寸成為所欲尺寸之研削手段(14);將結束前述研削之被加工物之表層部以一定之按壓力研磨、除去該被加工物之表層部之微裂痕並使表面粗糙度微細化之研磨手段(20);運算以前述量測手段量測之被加工物之尺寸,根據前述運算之結果輸出前述研削裝置之作動信號與前述研磨裝置之作動信號之控制手段。In the grinding and polishing system according to the second aspect of the present invention, for example, as shown in FIG. 21, at least one or more grinding and polishing apparatuses having the following means are provided: measuring means for measuring the size of the workpiece; The surface layer portion of (W) is ground at a constant cutting amount, and the impurities in the surface layer portion of the workpiece and the deformation in the column axis direction are removed, and the cross-sectional dimension is a grinding device of the desired size (14); a polishing means (20) for polishing the surface layer portion of the workpiece with a constant pressing force, removing micro-cracks in the surface layer portion of the workpiece, and miniaturizing the surface roughness; and calculating the workpiece to be measured by the above-mentioned measuring means The size is used to output an actuation signal of the grinding device and a control means for the actuation signal of the polishing device based on the result of the calculation.
在本發明之第3態樣之研削研磨加工系統係於第2之態樣之研削研磨加工系統中例如圖1與圖2所示,具備:將被加工物(W)之表層部以一定之切入量研削、將該被加工物(W)之表層部之雜質與柱軸方向之變形除去並使剖面尺寸成為所欲尺寸之研削裝置(1)且具有量測被加工物(W)之尺寸之量測手段(18)之研削裝置(1)、將結束前述研削之被加工物(W)之表層部以一定之按壓力研磨、除去該被加工物(W)之表層部之微裂痕並使表面粗糙度微細化之研磨裝置(2)且具有量測被加工物(W)之尺寸之量測手段(18)之研磨裝置(2)至少其中之一。In the grinding and polishing system according to the second aspect of the present invention, as shown in Figs. 1 and 2, for example, the surface layer portion of the workpiece (W) is fixed. The cutting amount is ground, the impurities in the surface layer portion of the workpiece (W) and the deformation in the column axis direction are removed, and the cross-sectional size is a desired size grinding device (1) and the size of the workpiece (W) is measured. In the grinding device (1) of the measuring device (18), the surface layer portion of the workpiece (W) that has been subjected to the grinding is polished at a constant pressing force to remove microcracks in the surface portion of the workpiece (W). A polishing apparatus (2) for refining the surface roughness and having at least one of the polishing apparatuses (2) for measuring the size (D) of the workpiece (W).
根據第2與第3之態樣,由於具備對被加工物設定一定之切入量(屬於學術用語:「定尺寸切入」)切削被加工物之變形而整理形狀並將剖面尺寸研削為所欲尺寸之研削手段、對被加工物設定一定之按壓力導致之切入量(屬於學術用語:「定壓切入」)研磨被加工物之表層部之研磨手段,故提供可將剖面尺寸與剖面形狀加工為所欲公差內且可確實除去表層部之微裂痕並將表面粗度微細化之硬脆性材料之研削研磨加工系統。此外,以具備於研削研磨裝置之量測手段量測被加工物之尺寸,將其量測結果以控制手段運算並輸出研削手段或研磨手段之作動信號,故可進行基於量測之尺寸之正確之研削研磨加工。According to the second and third aspects, it is possible to cut the shape of the workpiece by setting a certain amount of cut (the academic term: "sizing") into the workpiece, and to shape the shape and to cut the cross-sectional size into a desired size. The grinding means and the cutting amount by the pressing force (the academic term: "constant cutting") are used to grind the surface portion of the workpiece, so that the cross-sectional size and the cross-sectional shape can be processed to A grinding and polishing system for hard and brittle materials that can be used to remove minute cracks in the surface layer and to refine the surface roughness. In addition, the size of the workpiece is measured by the measuring means provided in the grinding and polishing apparatus, and the measurement result is calculated by a control means and the actuation signal of the grinding means or the grinding means is output, so that the size based on the measurement can be correctly performed. Grinding and grinding.
根據第3之態樣,可將研削研磨裝置與研削裝置或研磨裝置配合被加工物之形狀或加工目的組合。According to the third aspect, the grinding and polishing device can be combined with the grinding device or the polishing device in combination with the shape or processing purpose of the workpiece.
在本發明之第4態樣之研削研磨加工系統係於第1或第3之態樣之研削研磨加工系統中例如圖1、圖6、圖7、圖9所示,前述研削裝置(1)具備:可將前述被加工物(W)於垂直方向移動且將其柱軸水平載置之基台(11)、具有使載置於該基台(11)之被加工物(W)於與該被加工物(W)之柱軸正交之方向進退動以將該被加工物(W)於前述基台(11)之中心定位之按壓具(34)與使軸心為被加工物(W)之柱軸之方向且把持該被加工物(W)之兩端之夾持軸(13)且前述夾持軸(13)可將被加工物(W)以其軸心為中心旋轉之把持手段(12)、將磨粒彼此結合之磨粒層固著於圓盤狀或圓環狀之台板而成之研削體作為固著於旋轉盤、可裝卸地連結於旋轉驅動源的磨石,將前述磨粒層按壓於前述被加工物並旋轉之研削手段(14)、使前述把持手段(12)與研削手段(14)之其中一方於前述被加工物(W)之柱軸方向至少移動相當於該被加工物(W)之長度之距離之移動手段(19)。The grinding and polishing system according to the fourth aspect of the present invention is the grinding and polishing system according to the first or third aspect, for example, as shown in Figs. 1, 6, 7, and 9, the grinding device (1) A base (11) capable of moving the workpiece (W) in a vertical direction and horizontally placing the column axis thereof, and a workpiece (W) placed on the base (11) The workpiece (W) is retracted in a direction orthogonal to the column axis to press the workpiece (W) to the center of the base (11), and to make the shaft center the workpiece ( W) the direction of the column axis and holding the clamping shaft (13) at both ends of the workpiece (W) and the clamping shaft (13) can rotate the workpiece (W) around its axis The grinding means (12) and the grinding body in which the abrasive grain layer combined with the abrasive grains is fixed to the disk-shaped or annular platen is used as a grinding machine fixed to the rotating disk and detachably coupled to the rotary driving source a grinding means (14) for pressing the abrasive grain layer against the workpiece and rotating the same, and one of the holding means (12) and the grinding means (14) is in the column axis direction of the workpiece (W) At least move quite Moving means (19) from the length of the workpiece (W) of.
在本發明之第5態樣之研削研磨加工系統係於第1或第3之態樣之研削研磨加工系統中例如圖1、圖6、圖7、圖9、圖10所示,前述研削裝置(1)具備:可將前述被加工物(W)於垂直方向移動且將其柱軸水平載置之基台(11)、具有使載置於該基台(11)之被加工物(W)於與該被加工物(W)之柱軸正交之方向進退動以將該被加工物(W)於前述基台(11)之中心定位之按壓具(34)與使軸心為被加工物(W)之柱軸之方向且把持該被加工物(W)之兩端之夾持軸(13)且前述夾持軸(13)可將被加工物(W)以其軸心為中心旋轉之把持手段(12)、將磨粒彼此結合之磨粒層固著於圓盤狀或圓環狀之台板而成之研削體作為固著於旋轉盤、可裝卸地連結於旋轉驅動源的磨石,將前述磨粒層按壓於前述被加工物並旋轉之研削手段(14)、使前述把持手段(12)與研削手段(14)之其中一方於前述被加工物(W)之柱軸方向至少移動相當於該被加工物(W)之長度之距離之移動手段(19)。The grinding and polishing system according to the fifth aspect of the present invention is the grinding and polishing system according to the first or third aspect, for example, as shown in Figs. 1, 6, 7, 9, and 10, the grinding device is (1) A base (11) capable of moving the workpiece (W) in the vertical direction and horizontally placing the column axis thereof, and a workpiece (W) placed on the base (11) a pusher (34) that is positioned in a direction orthogonal to the column axis of the workpiece (W) to position the workpiece (W) at the center of the base (11) and to make the shaft center The direction of the column axis of the workpiece (W) and holding the clamping shaft (13) at both ends of the workpiece (W) and the clamping shaft (13) can treat the workpiece (W) with its axis The center rotating control means (12), the abrasive body layer in which the abrasive grains are bonded to each other is fixed to the disk-shaped or annular platen, and is fixed to the rotating disk and detachably coupled to the rotary drive a grinding stone of a source, a grinding device (14) that presses the abrasive grain layer against the workpiece and rotates, and one of the holding means (12) and the grinding means (14) is in the workpiece (W) Move at least in the direction of the column axis A moving means (19) corresponding to the distance of the length of the workpiece (W).
根據第4與第5之態樣,由於將被加工物以把持手段把持,以移動手段使移動,以研削手段研削,且可以把持手段之夾持軸使被加工物旋轉並研削,故可確實將被加工物之表層部之雜質與柱軸方向之變形除去。此外,以移動手段而把持於把持手段之被加工物或為旋轉之研削手段之磨石移動相當於該被加工物之長度之距離,故可於被加工物之全長研削。According to the fourth and fifth aspects, the workpiece is held by the holding means, moved by the moving means, ground by the grinding means, and the workpiece can be rotated and ground by the holding shaft of the gripping means. The impurities in the surface layer portion of the workpiece and the deformation in the column axis direction are removed. Further, the movement of the grindstone held by the gripping means or the grinding means by the moving means is equivalent to the distance of the length of the workpiece, so that the entire length of the workpiece can be ground.
在本發明之第6態樣之研削研磨加工系統係於第1或第3之態樣之研削研磨加工系統中例如圖2、圖6、圖7、圖9、圖11所示,前述研磨裝置具備:可將前述被加工物(W)於垂直方向移動且將其柱軸水平載置之基台(11)、具有使載置於該基台(11)之被加工物(W)於與該被加工物(W)之柱軸正交之方向進退動以將該被加工物(W)於前述基台(11)之中心定位之按壓具(34)與使軸心為被加工物(W)之柱軸之方向且把持該被加工物(W)之兩端之夾持軸(13)且前述夾持軸(13)可將被加工物(W)以其軸心為中心旋轉之把持手段(12)、具有旋轉盤(22)並於圓盤狀之表面捆束配置有含有磨粒之刷毛材(21)之研磨刷且前述研磨刷係可裝卸地連結於前述旋轉機構並將前述刷毛材(21)往前述被加工物(W)按壓並旋轉之研磨手段(20)、使前述把持手段(12)與研磨手段(20)之其中一方於前述被加工物(W)之柱軸方向至少移動相當於該被加工物(W)之長度之距離之移動手段(19)。The grinding and polishing system according to the sixth aspect of the present invention is the grinding and polishing system according to the first or third aspect, for example, as shown in FIG. 2, FIG. 6, FIG. 7, FIG. 9, FIG. A base (11) capable of moving the workpiece (W) in a vertical direction and horizontally placing the column axis thereof, and a workpiece (W) placed on the base (11) The workpiece (W) is retracted in a direction orthogonal to the column axis to press the workpiece (W) to the center of the base (11), and to make the shaft center the workpiece ( W) the direction of the column axis and holding the clamping shaft (13) at both ends of the workpiece (W) and the clamping shaft (13) can rotate the workpiece (W) around its axis a holding means (12), a polishing brush having a rotating disk (22) and having a brush-like material (21) disposed on a disk-shaped surface, and the polishing brush is detachably coupled to the rotating mechanism and a polishing means (20) for pressing and rotating the bristle material (21) to the workpiece (W), and a column of the holding means (12) and the polishing means (20) on the workpiece (W) Move at least in the direction of the axis A moving means (19) corresponding to the distance of the length of the workpiece (W).
根據第6之態樣,由於將被加工物以把持手段把持,以移動手段使移動,以研磨手段研磨,且可以把持手段之夾持軸使被加工物旋轉並研磨,故可確實進行將被加工物之微裂痕除去並將表面粗度微細化之研磨加工。此外,以移動手段而把持於把持手段之被加工物或為旋轉之研磨手段之研磨刷移動相當於該被加工物之長度之距離,故可於被加工物之全長研削。According to the sixth aspect, the workpiece is held by the holding means, moved by the moving means, and polished by the polishing means, and the workpiece can be rotated and polished by the holding shaft of the holding means, so that the workpiece can be surely Grinding processing in which micro cracks of the workpiece are removed and the surface roughness is refined. Further, since the workpiece held by the holding means or the polishing means for rotating the polishing means is moved by the distance corresponding to the length of the workpiece, the entire length of the workpiece can be ground.
在本發明之第7態樣之研削研磨加工系統係於第2之態樣之研削研磨加工系統中例如圖21所示,前述研削研磨裝置(6)具備:可將前述被加工物(W)於垂直方向移動且將其柱軸水平載置之基台(11)、具有使載置於該基台之被加工物於與該被加工物之柱軸正交之方向進退動以將該被加工物於前述基台之中心定位之按壓具(34)與使軸心為被加工物之柱軸之方向且把持該被加工物之兩端之夾持軸(13)且前述夾持軸可將被加工物以其軸心為中心旋轉之把持手段(12)、使前述把持手段(12)或研削手段(14)或研磨手段(20)之其中一方於前述被加工物之柱軸方向至少移動相當於該被加工物之長度之距離之移動手段(19),前述研削手段(14)將磨粒彼此結合之磨粒層固著於圓盤狀或圓環狀之台板而成之研削體作為固著於旋轉盤、可裝卸地連結於旋轉驅動源的磨石,將前述磨粒層按壓於前述被加工物並旋轉,前述研磨手段(20)具有於圓盤狀之表面捆束配置含有磨粒之刷毛材並將前述刷毛材往前述被加工物按壓並旋轉之旋轉盤與可裝卸地保持之研磨刷且前述研磨刷旋轉。In the grinding and polishing system according to the second aspect of the present invention, for example, as shown in FIG. 21, the grinding and polishing device (6) includes the workpiece (W). a base (11) that moves in a vertical direction and horizontally mounts its column axis, and has a workpiece placed on the base that is retracted in a direction orthogonal to a column axis of the workpiece to a pressing member (34) positioned at a center of the base plate and a clamping shaft (13) for holding the shaft center in the direction of the column axis of the workpiece and holding the both ends of the workpiece, and the clamping shaft can be a holding means (12) for rotating the workpiece around the axis thereof, and one of the holding means (12) or the grinding means (14) or the polishing means (20) is at least in the column axis direction of the workpiece a moving means (19) for moving a distance corresponding to the length of the workpiece, and the grinding means (14) grinding the abrasive grain layer in which the abrasive grains are bonded to the disk-shaped or annular platen The body is a grindstone fixed to the rotating disk and detachably coupled to the rotary drive source, and the abrasive grain layer is pressed against the foregoing The object to be processed is rotated, and the polishing means (20) has a rotating disk in which a brush material containing abrasive grains is placed on a disk-shaped surface, and the brush material is pressed and rotated toward the workpiece, and is detachably held. The abrasive brush is rotated and the aforementioned abrasive brush is rotated.
在本發明之第8態樣之研削研磨加工系統係於第2之態樣之研削研磨加工系統中例如圖21所示,前述研削研磨裝置具備:可將前述被加工物(W)於垂直方向移動且將其柱軸水平載置之基台(11)、具有使載置於該基台之被加工物於與該被加工物之柱軸正交之方向進退動以將該被加工物於前述基台之中心定位之按壓具(34)與使軸心為被加工物之柱軸之方向且把持該被加工物之兩端之夾持軸(13)且前述夾持軸可將被加工物以其軸心為中心旋轉之把持手段(12)、使前述把持手段(12)或研削手段(14)或研磨手段(20)之其中一方於前述被加工物之柱軸方向至少移動相當於該被加工物之長度之距離之移動手段(19)前述研削手段(14)將磨粒彼此結合之磨粒層固著於圓盤狀或圓環狀之台板而成之研削體作為固著於旋轉盤、可裝卸地連結於旋轉驅動源的磨石,將前述磨粒層按壓於前述被加工物並旋轉,前述研磨手段(20)具有於圓盤狀之表面捆束配置含有磨粒之刷毛材並將前述刷毛材往前述被加工物按壓並旋轉之旋轉盤與可裝卸地保持之研磨刷且前述研磨刷旋轉。In the grinding and polishing system according to the second aspect of the present invention, for example, as shown in FIG. 21, the grinding and polishing apparatus includes the workpiece (W) in a vertical direction. a base (11) that moves and horizontally mounts the column axis thereof, and has a workpiece placed on the base in a direction orthogonal to a column axis of the workpiece to retract the workpiece a pressing device (34) positioned at a center of the base and a clamping shaft (13) for holding the shaft center in the direction of the column axis of the workpiece and holding the both ends of the workpiece, and the clamping shaft can be processed The holding means (12) for rotating the object around the axis thereof causes at least one of the holding means (12), the grinding means (14) or the polishing means (20) to move at least in the column axis direction of the workpiece The means for moving the length of the workpiece (19) The grinding means (14) is a fixed body in which the abrasive grain layer in which the abrasive grains are bonded to each other is fixed to the disk-shaped or annular platen. a rotating stone, a grindstone detachably coupled to the rotary driving source, and pressing the abrasive grain layer on the aforementioned The polishing means (20) has a rotating disk in which a brush material containing abrasive grains is placed on a disk-shaped surface, and the brush material is pressed and rotated toward the workpiece, and the polishing is detachably held. Brush and rotate the aforementioned abrasive brush.
根據第7與第8之態樣,由於將被加工物以把持手段把持,以移動手段使移動,以研削手段研削,將研削後之被加工物以研磨手段研磨,且可以把持手段之夾持軸使被加工物旋轉並研磨,故可確實將被加工物之表層部之雜質與柱軸方向之變形除去,且確實進行將被加工物之微裂痕除去並將表面粗度微細化之研磨加工。此外,以移動手段而把持於把持手段之被加工物或為旋轉之研削手段之磨石與為旋轉之研磨手段之研磨刷移動相當於該被加工物之長度之距離,故可於被加工物之全長研削。According to the seventh and eighth aspects, the workpiece is held by the holding means, moved by the moving means, and ground by the grinding means, and the workpiece after the grinding is ground by the grinding means, and the holding means can be clamped. Since the shaft rotates and grinds the workpiece, it is possible to surely remove the impurities in the surface layer portion of the workpiece and the deformation in the column axis direction, and surely perform the grinding processing to remove the micro cracks of the workpiece and to refine the surface roughness. . Further, the grinding stone held by the holding means or the grinding means for rotating, and the polishing brush for the rotating polishing means are moved by the distance corresponding to the length of the workpiece, so that the workpiece can be processed Full length grinding.
在本發明之第9態樣之研削研磨加工系統係於第4、5、7、8之態樣之研削研磨加工系統中使前述研削手段之磨粒之粒度為粗研削用F90~F220(JISR6001:1998)或精密研削用#240~#500(JISR6001:1998)。In the grinding and polishing system of the ninth aspect of the present invention, in the grinding and polishing system of the fourth, fifth, seventh, and eighth aspects, the particle size of the abrasive grains of the grinding means is F90 to F220 (JISR6001) for rough grinding. : 1998) or #240~#500 for precision grinding (JISR6001:1998).
根據第9之態樣,由於使前述研削手段之磨粒之粒度為粗研削用F90~F220(JISR6001:1998)或精密研削用#240~#500(JISR6001:1998),故可效率良好地進行粗研削或精密研磨。According to the ninth aspect, since the particle size of the abrasive grains of the grinding means is F90 to F220 (JISR6001:1998) for rough grinding or #240 to #500 (JISR6001:1998) for precision grinding, it can be efficiently performed. Rough grinding or precision grinding.
在本發明之第10態樣之研削研磨加工系統係於第6~8之態樣之研削研磨加工系統中例如圖12所示,使於前述研磨手段之刷毛材(35、36)含有之磨粒之粒度為2種類以上。In the grinding and polishing system according to the sixth aspect of the present invention, for example, as shown in Fig. 12, the grinding material (35, 36) of the polishing means is included in the grinding and polishing system. The particle size of the particles is 2 or more types.
在本發明之第11態樣之研削研磨加工系統係於第10之態樣之研削研磨加工系統中使前述研磨手段之磨粒之粒度為粗研磨用#240~#500(JISR6001:1998)或精密研磨用#800~#1200(JISR6001:1998)。In the grinding and polishing system according to the eleventh aspect of the present invention, in the grinding and polishing system of the tenth aspect, the particle size of the abrasive grains of the polishing means is #240 to #500 (JISR6001:1998) or For precision grinding, #800~#1200 (JISR6001:1998).
在本發明之第12態樣之研削研磨加工系統係於第10之態樣之研削研磨加工系統中例如圖12所示,於前述研磨手段中,將含有粒度粗之磨粒之刷毛材(36)配置於旋轉盤之接近旋轉中心之部分,將含有粒度細之磨粒之刷毛材(35)配置於前述含有粒度粗之磨粒之刷毛材(36)配置之周圍。A grinding and polishing system according to a twelfth aspect of the present invention is the grinding and polishing system of the tenth aspect, for example, as shown in Fig. 12, in which the brush material containing coarse-grained abrasive grains is used in the above-mentioned polishing means (36). The bristles (35) containing fine-grained abrasive grains are disposed around the arrangement of the bristle material (36) containing the coarse-grained abrasive grains.
根據第10~12之態樣,由於使於前述研磨手段之刷毛材(35、36)含有之磨粒之粒度為2種類以上,故可以一台之研磨裝置進行被加工物之粗研削或精密研磨加工,可圖費用設備之減少。特別是將含有粒度粗之磨粒之刷毛材(36)配置於旋轉盤之接近旋轉中心之部分,將含有粒度細之磨粒之刷毛材(35)配置於前述含有粒度粗之磨粒之刷毛材(36)配置之周圍較理想。另外,使前述研磨手段之磨粒之粒度為粗研磨用#240~#500(JISR6001:1998)或精密研磨用#800~#1200(JISR6001:1998)較理想。以粗研磨用之研磨刷之高研磨能力將於被加工物之表層部存在之微裂痕確實除去,以精密研磨用之研磨刷將在粗研磨加工變粗之表層部之表面粗度微細化,可防止於於後步驟切片加工以使成為晶圓時發生之破裂或缺口。According to the tenth to twelfth aspects, since the size of the abrasive grains contained in the bristle material (35, 36) of the polishing means is two or more types, it is possible to carry out rough grinding or precision of the workpiece by one polishing apparatus. Grinding processing, reducing the cost of equipment. In particular, a bristle material (36) containing abrasive grains having a coarse particle size is disposed at a portion near the center of rotation of the rotary disk, and a bristle material (35) containing abrasive grains having a fine particle size is disposed on the bristles containing the abrasive grains having a coarse particle size. The circumference of the material (36) configuration is ideal. Further, the particle size of the abrasive grains of the polishing means is preferably #240 to #500 (JISR6001:1998) for rough polishing or #800 to #1200 (JISR6001:1998) for precision polishing. The high-grinding ability of the polishing brush for rough grinding is surely removed from the micro-cracks present in the surface layer portion of the workpiece, and the surface roughness of the surface layer portion which is roughened by the rough grinding process is finely refined by the polishing brush for precision polishing. It is possible to prevent the subsequent step of slicing to make a crack or a gap which occurs when the wafer is formed.
在本發明之第13態樣之研削研磨加工系統係於第1或3之態樣之研削研磨加工系統中,前述研削裝置之前述研削手段與前述研磨裝置之前述研磨手段為可替換,藉由使研削手段與研磨手段替換可使研削裝置成為研磨裝置或使研磨裝置成為研削裝置。A grinding and polishing system according to a thirteenth aspect of the present invention is the grinding and polishing system of the first aspect or the third aspect, wherein the grinding means of the grinding device and the grinding means of the polishing device are replaceable by Replacing the grinding means and the grinding means allows the grinding device to be a polishing device or the polishing device to be a grinding device.
根據第13之態樣,由於前述研削裝置之前述研削手段與前述研磨裝置之前述研磨手段為可替換,藉由使研削手段與研磨手段替換可使研削裝置成為研磨裝置或使研磨裝置成為研削裝置,故,亦即藉由使研削手段與研磨手段之安裝部之規格為共通,可使研削裝置與研磨裝置之(除去研削手段與研磨手段之部分)為相同規格,故可使裝置本體之製造原價為低價。According to the thirteenth aspect, the grinding means of the grinding device and the polishing means of the polishing apparatus are replaceable, and the grinding means can be replaced by the grinding means or the grinding means can be made into a grinding device by replacing the grinding means with the grinding means. Therefore, by making the grinding means and the specifications of the mounting portion of the polishing means common, the grinding device and the polishing device (excluding the grinding means and the polishing means) can be made to have the same specifications, so that the device body can be manufactured. The original price is low.
在本發明之第14態樣之研削研磨加工系統係於第2之態樣之研削研磨加工系統中,前述研削研磨裝置之前述研削手段與前述研磨手段為可替換。A grinding and polishing system according to a fourteenth aspect of the present invention is the grinding and polishing system of the second aspect, wherein the grinding means of the grinding and polishing apparatus and the polishing means are replaceable.
根據第14之態樣,使研削手段與研磨手段之安裝部之格為共通,前述研削裝置之前述研削手段與前述研磨裝置之前述研磨手段為可替換。在例如於圖21所示之場合係可將研磨手段與研削手段更換而使為研磨裝置。此外,可將研削手段與研磨手段更換而使為研削裝置。另外,例如圖23所示,在使1對之研削手段與2對之研磨手段連接之研削研磨裝置之場合,藉由將同圖左右方向之中央之研磨手段更換為研削手段,可於進行2階段之研削加工後進行研磨加工。According to the fourteenth aspect, the grinding means is common to the mounting portion of the polishing means, and the grinding means of the grinding device and the polishing means of the polishing apparatus are replaceable. For example, in the case shown in Fig. 21, the polishing means and the grinding means can be replaced to form a polishing apparatus. Further, the grinding means can be replaced by a grinding means and a grinding means. Further, for example, as shown in FIG. 23, in the case of a grinding and polishing apparatus that connects a pair of grinding means and two pairs of polishing means, the grinding means in the center in the left-right direction of the figure can be replaced with a grinding means. After the grinding process at the stage, the grinding process is performed.
在本發明之第15態樣之研削研磨加工系統係於第1之態樣之研削研磨加工系統中例如圖5所示,具備:將研削研磨加工前之被加工物搬入前述硬脆性材料之研削研磨加工系統之搬入裝置(3)、將結束研削研磨加工之被加工物從前述硬脆性材料之研削研磨加工系統搬出之搬出裝置(4)、具有在前述搬入裝置(3)、研削裝置(1)、研磨裝置(2)、搬出裝置(4)之間將前述被加工物移動之作動臂部(51)與安裝於該作動臂部(51)之前端且將前述被加工物旋轉為既定角度之把持部(52)之移載裝置(5)。In the grinding and polishing system according to the first aspect of the present invention, for example, as shown in FIG. 5, the grinding and polishing system of the first aspect of the present invention includes: carrying the workpiece before the grinding and polishing into the grinding of the hard and brittle material. The loading device (3) of the polishing processing system, and the unloading device (4) for carrying out the grinding and polishing of the workpiece from the grinding and polishing system of the hard and brittle material, and the loading device (3) and the grinding device (1) And a moving arm portion (51) that moves the workpiece between the polishing device (2) and the loading device (4) and a front end attached to the operating arm portion (51) and rotates the workpiece to a predetermined angle The transfer device (5) of the grip portion (52).
在本發明之第16態樣之研削研磨加工系統係於第2或第3之態樣之研削研磨加工系統中例如圖22所示,具備:將研削研磨加工前之被加工物(W)搬入前述硬脆性材料之研削研磨加工系統之搬入裝置(3)、將結束研削研磨加工之被加工物從前述硬脆性材料之研削研磨加工系統搬出之搬出裝置(4)、具有在前述搬入裝置(3)、研削研磨裝置(6)、研削裝置(1)、研磨裝置(2)、搬出裝置(4)之間將前述被加工物移動之作動臂部(51)與安裝於該作動臂部(51)之前端且將前述被加工物旋轉為既定角度之把持部(52)之移載裝置(5)。In the grinding and polishing system according to the sixth or third aspect of the present invention, for example, as shown in Fig. 22, the grinding and polishing system of the present invention is provided with the workpiece (W) before the grinding and polishing process. The loading device (3) of the grinding and polishing system of the hard and brittle material, and the unloading device (4) for carrying out the grinding and polishing of the workpiece from the grinding and polishing system of the hard and brittle material, and the loading device (3) The grinding device (6), the lapping device (1), the polishing device (2), and the unloading device (4) move the arm portion (51) between the workpiece and the actuator arm portion (51). a transfer device (5) of the grip portion (52) that rotates the workpiece to a predetermined angle at the front end.
根據第15或16之態樣,以移載裝置(5)將將研削研磨加工前之被加工物(W)往前述搬入裝置(3)、研削研磨裝置(6)、研削裝置(1)、研磨裝置(2)、搬出裝置(4)移送,故於搬入裝置(3)上待機中之尚未研削研磨加工之被加工物(W)可以研削裝置(1)、研磨裝置(2)將研削加工、研磨加工結束後往搬出裝置(4)容易搬出。此外,可以移載裝置(5)之把持部(52)將被加工物(W)旋轉,故可將以研削裝置(1)、研磨裝置(2)加工之側面改變後加工。According to the fifteenth or sixteenth aspect, the workpiece (W) before the grinding and polishing processing is transferred to the loading device (3), the grinding and polishing device (6), the grinding device (1), and the transfer device (1). Since the polishing device (2) and the unloading device (4) are transferred, the workpiece (W) that has not been ground and polished in the standby device (3) can be ground by the grinding device (1) and the polishing device (2). After the polishing process is completed, the unloading device (4) is easily carried out. Further, since the workpiece (W) can be rotated by the grip portion (52) of the transfer device (5), the side surface processed by the grinding device (1) and the polishing device (2) can be changed and processed.
在本發明之第17態樣之研削研磨加工系統係於第1或第2之態樣之研削研磨加工系統中,設於前述研削裝置或研磨裝置之量測手段由具有於與前述被加工物之柱軸垂直之水平方向隔著已知基準間隔尺寸形成之一對基準面與於與前述柱軸垂直之鉛直方向隔著已知基準間隔尺寸形成之一對基準面之基準塊、使量測方向為前述水平方向並量測前述基準塊之兩側之基準面與被加工物之兩側之研削研磨加工部之間隔尺寸之量測具、使量測方向為前述水平方向並量測前述基準塊之上面之基準面與被加工物之上面之研削研磨加工部之高度位置之量測具構成。The grinding and polishing system according to the seventeenth aspect of the present invention is the grinding and polishing system of the first or second aspect, wherein the measuring means provided in the grinding device or the polishing device is provided with the workpiece One of the reference planes formed in the horizontal direction perpendicular to the vertical axis of the column axis and the reference plane formed in the vertical direction perpendicular to the column axis by a known reference interval dimension is used to measure the reference block of the reference plane. The measuring direction is the horizontal direction, and measuring the distance between the reference surface on both sides of the reference block and the grinding and grinding processing portion on both sides of the workpiece, and measuring the direction in the horizontal direction and measuring the reference The reference surface of the upper surface of the block and the measuring device of the height of the grinding and polishing part on the upper surface of the workpiece are formed.
根據第17之態樣,量測手段具有具有於與前述被加工物之柱軸垂直之水平方向隔著已知基準間隔尺寸形成之一對基準面與於與前述柱軸垂直之鉛直方向隔著已知基準間隔尺寸形成之一對基準面之基準塊、使量測方向為前述水平方向並量測前述基準塊之兩側之基準面與被加工物之兩側之研削研磨加工部之間隔尺寸之量測具、使量測方向為前述水平方向並量測前述基準塊之上面之基準面與被加工物之上面之研削研磨加工部之高度位置之量測具,故可使被加工物之柱軸與夾持軸之軸心一致並將被加工物以把持手段把持。According to a seventeenth aspect, the measuring means has a direction in which a reference plane is formed in a horizontal direction perpendicular to a column axis perpendicular to the column axis of the workpiece, and a reference plane is perpendicular to a vertical direction perpendicular to the column axis. It is known that the reference interval size forms a reference block of the reference plane, the measurement direction is the horizontal direction, and the reference surface of both sides of the reference block and the interval between the grinding and polishing portions on both sides of the workpiece are measured. Measuring the measuring tool, measuring the direction in the horizontal direction, and measuring the measuring surface of the reference surface on the upper surface of the reference block and the height of the grinding and polishing portion on the upper surface of the workpiece, so that the workpiece can be processed The column axis coincides with the axis of the clamping shaft and the workpiece is held by the holding means.
在本發明之第18態樣之研削研磨加工系統係於第17之態樣之研削研磨加工系統中,前述控制手段具備:使前述研削手段與前述研磨手段之各前端接觸設於前述研削裝置與前述研磨裝置之把持手段之基準塊之一對基準面,以運算處理前述研削裝置與前述研磨裝置之各手段之切入量成為0之基點位置之機能;以設於前述研削裝置與前述研磨裝置之量測手段之量測具量測前述基準塊之兩側之基準面與被加工物兩側之加工部之差,以運算處理被加工物之加工部之加工前與加工後之剖面尺寸之機能;執行為了使前述研削裝置與前述研磨裝置將前述被加工物對心後加以把持之運算處理之機能;對加工開始前輸入之初期設定項目與分別設於前述研削裝置與前述研磨裝置之量測手段之量測具所輸出之量測信號進行運算處理,並對前述研削裝置與前述研磨裝置之各手段輸出作動信號之機能。In a grinding and polishing system according to a seventeenth aspect of the present invention, in the grinding and polishing system of the aspect, the control means includes: the grinding means is provided in contact with each of the end portions of the polishing means in the grinding device The reference surface of one of the reference blocks of the holding means of the polishing apparatus is used to calculate a function of processing the cutting amount of each of the grinding device and the polishing device to a base position of 0; and is provided in the grinding device and the polishing device. The measuring device measures the difference between the reference surface on both sides of the reference block and the processing portion on both sides of the workpiece to calculate the function of the processing before and after processing of the processed portion of the workpiece Performing a function of calculating the processing of the workpiece by the grinding device and the polishing device, and setting the initial setting items input before the start of the machining and the measurement of the grinding device and the polishing device respectively The measuring signal outputted by the measuring tool of the means is subjected to arithmetic processing, and the means for the grinding device and the grinding device are An actuation function signals.
在本發明之第19態樣之研削研磨加工系統係於第2之態樣之研削研磨加工系統中,前述控制手段具備:使前述研削手段與前述研磨手段之各前端接觸設於前述研削裝置與前述研磨裝置之把持手段之基準塊之一對基準面,以運算處理前述研削裝置與前述研磨裝置之各手段之切入量成為0之基點位置之機能;以設於前述研削裝置與前述研磨裝置之量測手段之量測具量測前述基準塊之兩側之基準面與被加工物兩側之加工部之差,以運算處理被加工物之加工部之加工前與加工後之剖面尺寸之機能;執行為了使前述研削裝置與前述研磨裝置將前述被加工物對心後加以把持之運算處理之機能;對加工開始前輸入之初期設定項目與前述量測手段之量測具所輸出之量測信號進行運算處理,並對前述研削手段與前述研磨手段輸出作動信號之機能。According to a ninth aspect of the present invention, in the grinding and polishing system of the second aspect, the control means includes: the grinding means is provided in contact with each of the distal ends of the polishing means in the grinding device; The reference surface of one of the reference blocks of the holding means of the polishing apparatus is used to calculate a function of processing the cutting amount of each of the grinding device and the polishing device to a base position of 0; and is provided in the grinding device and the polishing device. The measuring device measures the difference between the reference surface on both sides of the reference block and the processing portion on both sides of the workpiece to calculate the function of the processing before and after processing of the processed portion of the workpiece Performing a function of calculating the processing of the workpiece by the grinding device and the polishing device, and measuring the output of the initial setting item input before the start of machining and the measuring device of the measuring means The signal is subjected to arithmetic processing, and the function of the actuation signal is outputted to the grinding means and the polishing means.
根據第18與第19之態樣,於控制手段設有用來將研削研磨加工系統自動化之各機能,故被加工物之加工部之研削加工與研磨加工可確實進行且可圖省力化。According to the eighteenth and nineteenth aspects, since the control means is provided with various functions for automating the grinding and polishing system, the grinding and machining of the processed portion of the workpiece can be surely performed and labor-saving.
在本發明之第20態樣之研削研磨加工系統係於第2之態樣之研削研磨加工系統中,前述被加工物之形狀為角柱狀;將進行研削研磨加工之被加工物之剖面尺寸之公差設為±0.5mm,將該被加工物之2側面部彼此交集之角部之剖面形狀之公差設為±0.1度。In a grinding and polishing system according to a twentieth aspect of the present invention, in the grinding and polishing system of the second aspect, the shape of the workpiece is a prismatic shape; and the cross-sectional dimension of the workpiece to be ground and ground is processed. The tolerance was set to ±0.5 mm, and the tolerance of the cross-sectional shape of the corner portion where the side portions of the workpiece 2 intersected each other was set to ±0.1 degrees.
根據第20之態樣,例如於四角柱狀之矽塊中,矽塊之剖面尺寸有剖面125mm*125mm之正方形(稱呼:5英吋)、156mm*156mm之正方形(稱呼:6英吋)、210mm*210mm之正方形(稱呼:8英吋)3種,分別要求之公差為±0.5mm,進一步要求之矽塊之2側面部彼此交集之角部之剖面形狀之公差為±0.1度,故可進行基於剖面尺寸之公差與剖面形狀之公差之研削研磨加工。According to the twentieth aspect, for example, in the square columnar block, the cross-sectional dimension of the block has a square of 125 mm*125 mm (called 5 inches) and a square of 156 mm*156 mm (called 6 inches). There are three kinds of squares of 210mm*210mm (referred to as 8 inches), and the required tolerance is ±0.5mm. The tolerance of the cross-sectional shape of the corners where the two side parts of the two blocks are further required is ±0.1 degrees. Grinding and grinding based on tolerances of section dimensions and tolerances of section shapes.
在本發明之第21態樣之研削研磨加工系統係於第18或19之態樣之研削研磨加工系統中,前述被加工物之形狀為圓柱狀;將進行研削研磨加工之被加工物之剖面尺寸之公差設為±0.5mm。The grinding and polishing system according to the twenty-first aspect of the present invention is the grinding and polishing system according to the 18th or 19th aspect, wherein the shape of the workpiece is a cylindrical shape; and a profile of the workpiece to be ground and ground The tolerance of the dimensions is set to ±0.5mm.
根據第21之態樣,例如於圓柱狀之單結晶藍寶石錠中,剖面尺寸係直徑為2~6英吋(51~154mm)要求之公差為±0.5mm,故可進行基於剖面尺寸之公差之研削研磨加工。According to the aspect of the twenty-first aspect, for example, in a cylindrical single crystal sapphire ingot, the cross-sectional dimension is 2 to 6 inches (51 to 154 mm) and the required tolerance is ±0.5 mm, so that tolerance based on the sectional size can be performed. Grinding and grinding.
在本發明之第22態樣之研削研磨加工方法係使用申請專利範圍第1~3項中任一項之硬脆性材料之研削研磨加工系統;在以前述研削裝置進行研削加工後,以前述研磨裝置進行研磨加工。In the grinding and polishing method according to the 22nd aspect of the present invention, the grinding and polishing system of the hard and brittle material according to any one of the above claims 1 to 3 is used; after the grinding by the grinding device, the grinding is performed The device is ground.
根據第22之態樣,使用將被加工物之表層部以一定之切入量研削、將該被加工物之表層部之雜質與柱軸方向之變形除去並使剖面尺寸成為所欲尺寸之研削裝置且具有量測被加工物之尺寸之量測手段之研削裝置與將結束前述研削之被加工物之表層部以一定之按壓力研磨、除去該被加工物之表層部之微裂痕並使表面粗糙度微細化之研磨裝置且具有量測被加工物之尺寸之量測手段之研磨裝置進行研削研磨加工,故可將剖面尺寸與剖面行裝加工至所欲公差內且提供可將表層部之微裂痕確實除去並將表面粗度微細化之硬脆性材料之研削研磨加工方法。此外,以設於研削裝置或研磨裝置之量測手段量測被加工物之尺寸,將其量測結果以控制手段運算並輸出研削裝置或研磨裝置之作動信號,故可進行基於量測之尺寸之正確之研削研磨加工。According to the twenty-second aspect, the surface layer portion of the workpiece is ground at a constant cutting amount, and the impurities in the surface layer portion of the workpiece and the deformation in the column axis direction are removed, and the cross-sectional size is a desired size. Further, the grinding device having the measuring means for measuring the size of the workpiece and the surface layer portion of the workpiece to be finished by the grinding are ground at a constant pressing force to remove microcracks of the surface portion of the workpiece and roughen the surface The grinding device having the micro-fine grinding device and the grinding device having the measuring means for measuring the size of the workpiece is subjected to grinding and grinding processing, so that the cross-sectional size and the cross-sectional line can be processed to a desired tolerance and a micro-crack can be provided for the surface portion. A grinding and grinding method for removing a hard and brittle material which refines the surface roughness. In addition, the size of the workpiece is measured by a measuring device provided in the grinding device or the grinding device, and the measurement result is calculated by a control means and outputted as an actuation signal of the grinding device or the grinding device, so that the size based on the measurement can be performed. The correct grinding and grinding process.
根據本發明,使用將被加工物之表層部以一定之切入量研削、將該被加工物之表層部之雜質與柱軸方向之變形除去並使剖面尺寸成為所欲尺寸之研削裝置且具有量測被加工物之尺寸之量測手段之研削裝置與將結束前述研削之被加工物之表層部以一定之按壓力研磨、除去該被加工物之表層部之微裂痕並使表面粗糙度微細化之研磨裝置且具有量測被加工物之尺寸之量測手段之研磨裝置進行研削研磨加工,故可將剖面尺寸與剖面行裝加工至所欲公差內且可將表層部之微裂痕確實除去並將表面粗度微細化。藉此,於次步驟中可將於對晶圓切片加工時發生之破裂、缺口導致之不良製品之發生率降低。According to the present invention, the surface layer portion of the workpiece is ground at a constant cutting amount, and the impurities in the surface layer portion of the workpiece and the deformation in the column axis direction are removed, and the cross-sectional size is a desired size. The grinding device for measuring the size of the workpiece and the surface layer portion of the workpiece to be finished by the grinding are polished at a constant pressing force to remove microcracks in the surface portion of the workpiece and to make the surface roughness fine. The grinding device and the grinding device having the measuring means for measuring the size of the workpiece are subjected to grinding and grinding processing, so that the cross-sectional size and the cross-sectional line can be processed to the desired tolerance and the micro-cracks of the surface portion can be surely removed and The surface roughness is fine. Thereby, in the second step, the incidence of defective products caused by cracks and gaps occurring during wafer slicing can be reduced.
本發明係基於在日本於2011年09月15日申請之特願2011-201809號,其內容係做為本申請之內容形成其一部分。The present invention is based on Japanese Patent Application No. 2011-201809, filed on Sep.
此外,本發明藉由以下之詳細之說明應可更完全理解。然而,詳細之說明與特定之實施例係本發明之理想之實施之形態,僅係為了說明之目的而記載者。因為從此詳細之說明各種之變更、改變對當業者而言為明顯。In addition, the present invention should be more fully understood from the following detailed description. However, the detailed description and specific examples of the embodiments of the invention are intended for the purpose of illustration. Since the various changes and changes are explained in detail from the above, it is obvious to the practitioner.
申請人沒有將記載之實施之形態之任一者對公眾獻上之意圖,揭示之改變、代替案之中,文言上可能不包含於申請專利範圍內者亦做為在均等論下之發明之一部分。The applicant does not intend to offer any of the stated forms of implementation to the public, revealing the changes or substitutions, and the text may not be included in the scope of the patent application as the invention under the equalization theory. portion.
本說明書或申請專利範圍之記載中,名詞與同樣之指示語之使用只要沒有特別指示或藉由文脈明確否定便應解式微包含單數與複數雙方。在本說明書中提供之任一例示或例示性之用語(例如「等」)之使用亦不過僅是使容易說明本發明之意圖,只要沒有特別於申請專利範圍記載便不是對本發明之範圍施加限制者。In the description of the specification or the scope of the patent application, the use of the singular and plural referents should be used in the singular and plural terms unless otherwise specified. The use of any singular or exemplified language (such as "the" or "an" or "an" or "an" By.
以下參照圖面針對本發明之實施形態說明。另外,於各圖中,對彼此相同或相當之要素細賦予相同符號且重複之說明係省略。Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the respective drawings, the same or corresponding elements are denoted by the same reference numerals, and the description thereof will not be repeated.
說明研削研磨加工系統之第1實施形態。一種硬脆性材料之研削研磨加工系統,將由用來以切片加工製造晶圓之硬脆性材料構成之柱狀之被加工物研削與研磨,其特徵在於具備:將被加工物(W)之表層部以一定之切入量研削、將該被加工物(W)之表層部之雜質與柱軸方向之變形除去並使剖面尺寸成為所欲尺寸之研削裝置(1);將結束前述研削之被加工物(W)之表層部以一定之按壓力研磨、除去該被加工物(W)之表層部之微裂痕並使表面粗糙度微細化之研磨裝置(2);基於於加工開始前輸入之初期設定項目、前述研削裝置(1)之量測信號、前述研磨裝置(2)之量測信號運算處理,基於該運算處理之結果輸出前述研削裝置(1)之作動信號與前述研磨裝置(2)之作動信號之控制手段。A first embodiment of a grinding and polishing system will be described. A grinding and polishing system for a hard and brittle material, which is obtained by grinding and polishing a columnar workpiece composed of a hard and brittle material for forming a wafer by slicing, and is characterized in that: a surface portion of a workpiece (W) is provided Grinding device with a certain amount of cutting, removing the impurities in the surface layer portion of the workpiece (W) and the deformation in the column axis direction, and making the cross-sectional dimension into a desired size (1); a polishing device (2) in which the surface layer portion of (W) is polished at a constant pressing force to remove microcracks in the surface portion of the workpiece (W) and to have a fine surface roughness; based on an initial setting before the start of processing a measurement signal of the grinding device (1), a measurement signal calculation process of the polishing device (2), and an operation signal of the grinding device (1) and the polishing device (2) are output based on the result of the calculation processing. The means of control of the actuation signal.
在此,硬脆性材料係指如玻璃、陶瓷、水晶、石英等具有硬度高而硬但對衝擊較弱而脆之性質之材料。Here, the hard and brittle material refers to a material having properties such as glass, ceramics, crystal, quartz, etc. which have high hardness and hardness but are weak to impact and brittle.
[研削裝置][grinding device]
圖1係顯示本發明之研削角柱狀之被加工物(W)之研削裝置(1)。研削裝置(1)具備把持被加工物(W)之把持手段(12)、將被加工物(W)之側面部(F)與角部(C)研削加工之研削手段A(14)、形成基準面之基準塊(K)、量測被加工物(W)之剖面尺寸之量測手段(18)、將把持被加工物(W)之把持手段(12)移動以使前述被加工物(W)往量測手段(18)與研削手段A(14)之間移動之移動手段(19)。Fig. 1 is a view showing a grinding device (1) for grinding a workpiece (W) of a columnar shape according to the present invention. The grinding device (1) includes a holding means (12) for gripping the workpiece (W), and a grinding means A (14) for grinding the side surface portion (F) and the corner portion (C) of the workpiece (W). The reference block (K) of the reference surface, the measuring means (18) for measuring the cross-sectional dimension of the workpiece (W), and the holding means (12) for holding the workpiece (W) to move the workpiece ( W) A moving means (19) for moving between the measuring means (18) and the grinding means A (14).
前述移動手段(19)係使把持被加工物(W)之把持手段(12)在量測手段(18)與研削手段A(14)之間移動以量測被加工物(W)或將被加工物(W)研削加工。但將把持被加工物(W)之把持手段(12)固定並使量測手段(18)與研削手段A(14)在被加工物(W)之位置移動以進行該被加工物(W)之量測與研削加工亦可。The moving means (19) moves the holding means (12) for holding the workpiece (W) between the measuring means (18) and the grinding means A (14) to measure the workpiece (W) or will be Machining (W) grinding. However, the holding means (12) for holding the workpiece (W) is fixed, and the measuring means (18) and the grinding means A (14) are moved at the position of the workpiece (W) to carry out the workpiece (W). The measurement and grinding process can also be used.
載置於研削裝置(1)之被加工物(W)係於研削加工開始前以量測手段(18)量測剖面尺寸。在該被加工物(W)之剖面尺寸比將做為初期設定項目而事先輸入控制手段之被加工物(W)之研削加工量與研磨加工量與研削研磨加工後之剖面尺寸累計後之尺寸小之場合係藉由前述控制手段之運算處理中止研削裝置(1)之研削加工。該被加工物(W)可解除把持手段(12)之把持狀態並往再溶融步驟返回。在再溶融步驟溶解之該被加工物(W)係其原料在例如單結晶之矽或藍寶石等之場合係再度成形為圓柱狀,在多結晶之場合之矽等之場合係再度成形為立方體形狀。The workpiece (W) placed on the grinding device (1) is measured by the measuring means (18) before the start of the grinding process. The cross-sectional dimension of the workpiece (W) is the size of the workpiece (W) to be processed as the initial setting item, and the amount of grinding and the amount of polishing and the cross-sectional dimension after grinding and grinding are integrated. In the case of small, the grinding process of the grinding device (1) is stopped by the arithmetic processing of the aforementioned control means. The workpiece (W) can be released from the holding state of the holding means (12) and returned to the remelting step. The workpiece (W) which is dissolved in the remelting step is reshaped into a cylindrical shape in the case of, for example, a single crystal ruthenium or sapphire, and is reshaped into a cubic shape in the case of polycrystallization. .
於前述被加工物(W)之形狀為角柱狀之場合,前述研削裝置(1)具備:可將前述被加工物(W)於垂直方向移動且將其柱軸水平載置之基台(11)、具有使載置於該基台(11)之被加工物(W)於與該被加工物(W)之柱軸正交之方向進退動以將該被加工物(W)於前述基台(11)之中心定位之按壓具(34)(參照圖7)與使軸心為被加工物(W)之柱軸之方向且把持該被加工物(W)之兩端之夾持軸(13)且前述夾持軸(13)可將被加工物(W)以其軸心為中心旋轉之把持手段(12)。該夾持軸(13)把持該被加工物(W)。於前述基台(11)降下時前述夾持軸(13)將被加工物(W)以其軸心為中心把持。把持手段(12)係如圖6所示,係使被加工物(W)可「間歇旋轉」或「連續旋轉」。When the shape of the workpiece (W) is a prismatic shape, the grinding device (1) includes a base that can move the workpiece (W) in the vertical direction and horizontally mount the column axis (11). a workpiece (W) placed on the base (11) is retracted in a direction orthogonal to a column axis of the workpiece (W) to cause the workpiece (W) to be in the base a pressing device (34) positioned at the center of the table (11) (refer to FIG. 7) and a clamping shaft for holding the axis of the object (W) in the direction of the column axis and holding the both ends of the workpiece (W) (13) The holding shaft (13) is a holding means (12) for rotating the workpiece (W) around its axis. The clamping shaft (13) holds the workpiece (W). When the abutment (11) is lowered, the aforementioned clamping shaft (13) holds the workpiece (W) around its axis. The holding means (12) is such that the workpiece (W) can be "intermittently rotated" or "continuously rotated" as shown in FIG.
把持手段(12)將被加工物(W)可「間歇旋轉」地把持係指於被加工物(W)之研削研磨之位置之形狀為平面之場合,為了將其加工面於於圖1、圖2顯示之Y方向之兩側定位而使把持該被加工物(W)之把持手段(12)之夾持軸(13)以其軸心為中心「間歇旋轉」。The gripping means (12) is capable of "intermittently rotating" the workpiece (W) to the position where the workpiece (W) is ground and polished, and the surface is formed in Fig. 1. 2 shows the positioning on both sides in the Y direction, and the holding shaft (13) of the holding means (12) holding the workpiece (W) "intermittently rotates" around its axis.
若以加工面皆為平面之四角柱狀之多結晶矽塊狀之研削研磨加工為例針對「間歇旋轉」之作動與加工順序說明,使對向之第1組之側面部(F)(參照圖16)位於於圖1、圖2顯示之Y方向之兩側並加工後使旋轉90度並加工第2組之側面部(F)並終了4側面部(F)之加工,使旋轉45度以使對向之第1組之角部(C)(參照圖16)位於於圖1、圖2顯示之Y方向之兩側並加工後使旋轉90度並加工第2組之角部(C),研削研磨加工終了。For the example of the operation and processing sequence of the "intermittent rotation" in the case of a multi-crystal block-shaped grinding and polishing process in which the machined surfaces are all in the shape of a flat surface, the side portion (F) of the first group facing the opposite direction (refer to Fig. 16) is located on both sides of the Y direction shown in Figs. 1 and 2 and is rotated by 90 degrees to machine the side portion (F) of the second group and finish the processing of the side portion (F) of 4, so that the rotation is 45 degrees. The corner portion (C) of the first group (see FIG. 16) is positioned on both sides in the Y direction shown in FIGS. 1 and 2, and is rotated by 90 degrees to process the corner portion of the second group (C). ), the grinding and grinding process is finished.
把持手段(12)將被加工物(W)可「連續旋轉」地把持係指於將被加工物(W)之研削研磨之位置之剖面形狀為圓弧狀之例如圓柱狀之單結晶藍寶石錠之胴體部(B)研削研磨加工之場合或將四角柱狀之單結晶矽塊之四角部(C)研削研磨加工之場合,如圖3、圖4所示,於一側配置研削手段(20)或研磨手段(30),使把持該被加工物(W)之夾持軸(13)以另外輸入設定之旋轉速度「連續旋轉」,進行研削研磨加工。The gripping means (12) allows the workpiece (W) to be "continuously rotated" to hold a single crystal sapphire ingot, for example, a cylindrical shape having a cross-sectional shape at a position where the workpiece (W) is ground and polished. In the case where the body portion (B) is ground and polished, or the four corner portions (C) of the square columnar single crystal block are ground and ground, as shown in Figs. 3 and 4, the grinding means is disposed on one side (20). Or the polishing means (30), the holding shaft (13) holding the workpiece (W) is subjected to a grinding rotation process by continuously inputting the set rotation speed "continuous rotation".
此外,設於前述研削裝置(1)或研磨裝置(2)之把持手段(12)之夾持軸(13)具備把持被加工物(W)之兩端面並量測該被加工物(W)之長度方向之尺寸並使控制手段記憶之機能,其量測結果係運算處理並成為控制後述之移動手段(19)之移動距離之作動信號者。藉由該作動信號所導致之前述移動手段(19)之作動,把持前述被加工物(W)之把持手段(12)之夾持軸(13)在量測手段(18)與研削手段(1)或量測手段(18)與研磨手段(2)之間移動,施加該被加工物(W)之剖面尺寸之量測或研削加工或研磨加工者。另外,量測手段(18)與研削手段(1)或量測手段(18)與研磨手段(2)在夾持軸(13)之間移動亦可。Further, the clamping shaft (13) provided in the grinding device (1) or the holding device (12) of the polishing device (2) is provided with both end faces of the workpiece (W) and measures the workpiece (W). The size in the longitudinal direction and the function of the control means are memorized, and the measurement result is arithmetically processed and becomes an actuation signal for controlling the moving distance of the moving means (19) to be described later. By the action of the moving means (19) caused by the actuation signal, the clamping shaft (13) of the holding means (12) of the workpiece (W) is held by the measuring means (18) and the grinding means (1) Or moving between the measuring means (18) and the polishing means (2), applying the measurement of the cross-sectional dimension of the workpiece (W) or grinding or grinding. Further, the measuring means (18), the grinding means (1) or the measuring means (18) and the polishing means (2) may be moved between the holding shafts (13).
研削手段A(14)係如圖9所示,係將研削體(15)作為固著於旋轉盤(16)之杯型磨石,該研削體(15)係將磨粒彼此結合之磨粒層A(15a)固著於圓盤狀或圓環狀之台板(15b)而成。前述研削手段A(14)係透過旋轉軸(17)與旋轉驅動源可裝卸地連結,將前述磨粒層A(15a)面接觸於前述被加工物(W)之加工部並按壓旋轉。另外,台板(15b)不為平面亦可,例如可將固著前述磨粒層A(15a)之位置做成凸形狀。此外,研削手段A(14)係如圖10所示,將磨粒層A(15a)固著於旋轉盤(16)亦可。此時,將磨粒層A(15a)固著於旋轉盤(16)之手段,無論以螺栓等固定或與旋轉盤(16)一體成形皆可。As shown in Fig. 9, the grinding means A (14) is a grinding type body (15) which is a cup type grindstone fixed to a rotating disk (16) which is an abrasive grain which combines abrasive grains with each other. Layer A (15a) is fixed to a disk-shaped or annular platen (15b). The grinding means A (14) is detachably coupled to the rotary drive source via the rotary shaft (17), and the abrasive grain layer A (15a) is brought into surface contact with the processed portion of the workpiece (W) and is pressed and rotated. Further, the platen (15b) may not be flat, and for example, the position of the abrasive grain layer A (15a) may be convex. Further, the grinding means A (14) may be as shown in Fig. 10, and the abrasive grain layer A (15a) may be fixed to the rotating disk (16). At this time, the means for fixing the abrasive grain layer A (15a) to the rotary disk (16) may be fixed by bolts or the like or integrally formed with the rotary disk (16).
研削裝置(1)係配置使對向為一對研削手段A(14)(磨石)以使磨粒層A(15a)對被加工物(W)之兩側面接觸較理想。研削手段A(14)係可裝卸地設於研削裝置(1)。The grinding device (1) is disposed so as to face the pair of grinding means A (14) (grinding stone) so that the abrasive grain layer A (15a) is in contact with both side surfaces of the workpiece (W). The grinding means A (14) is detachably provided to the grinding device (1).
研削裝置(1)具備量測於與柱軸垂直之水平方向與垂直方向分別形成有一對基準面之基準塊之剖面尺寸、被加工物(W)之剖面尺寸之量測手段(18)。研削裝置(1)具備使前述把持手段(12)與研削手段A(14)之其中一方於前述被加工物(W)之柱軸方向至少移動相當於該被加工物(W)之長度之距離之移動手段(19)。The grinding device (1) includes a measuring means (18) for measuring a cross-sectional dimension of a reference block in which a pair of reference faces are formed in a horizontal direction and a vertical direction perpendicular to the column axis, and a cross-sectional dimension of the workpiece (W). The grinding device (1) is provided such that one of the holding means (12) and the grinding means A (14) moves at least in the column axis direction of the workpiece (W) by a distance corresponding to the length of the workpiece (W) The means of movement (19).
研削裝置(1)具有做為研削手段A(14)而於圓盤狀之表面使磨粒彼此結合而一體形成磨粒層A(15a),使該磨粒層A(15a)對前述被加工物(W)之加工部面接觸並按壓旋轉,故可以一定之切入量研削。The grinding device (1) has a grinding layer A (15a) integrally formed on the disc-shaped surface by combining the abrasive grains as a grinding means A (14), and the abrasive layer A (15a) is processed as described above. Since the processed portion of the object (W) is in contact with the surface and is pressed and rotated, it can be ground in a certain amount of cutting.
圖3係顯示本發明之研削圓柱狀之被加工物(W)之研削裝置(1)。研削裝置(1)具備把持被加工物(W)之把持手段(12)、將被加工物(W)之胴體部(B)研削加工之研削手段B(24)、形成基準面之基準塊(K)、量測被加工物(W)之剖面尺寸之量測手段(18)、將把持被加工物(W)之把持手段(12)移動以使前述被加工物(W)往量測手段(18)與研削手段B(24)之間移動之移動手段(19)。Fig. 3 is a view showing a grinding device (1) for grinding a cylindrical workpiece (W) according to the present invention. The grinding device (1) includes a holding means (12) for gripping the workpiece (W), a grinding means B (24) for grinding the body portion (B) of the workpiece (W), and a reference block for forming the reference surface ( K), measuring means (18) for measuring the cross-sectional dimension of the workpiece (W), and moving the holding means (12) for holding the workpiece (W) to measure the workpiece (W) (18) A moving means (19) for moving between the grinding means B (24).
前述移動手段(19)係與前述同樣將把持被加工物(W)之把持手段(12)固定並使量測手段(18)與研削手段B(24)在被加工物(W)之位置移動以進行該被加工物(W)之量測與研削加工亦可。The moving means (19) fixes the holding means (12) for holding the workpiece (W) in the same manner as described above, and moves the measuring means (18) and the grinding means B (24) at the position of the workpiece (W). It is also possible to perform measurement and grinding of the workpiece (W).
在被加工物(W)為圓柱狀之場合,研削裝置(1)之把持手段(12)係將被加工物(W)以其軸心為中心可「連續旋轉」地把持。When the workpiece (W) has a cylindrical shape, the gripping means (12) of the grinding device (1) holds the workpiece (W) "continuously rotating" around the axis.
此外,研削手段B(24)係如圖13所示,使用使於圓筒狀之胴體表面使磨粒彼此結合之磨粒層B(25)於具備旋轉軸(27)之旋轉筒(26)之表面固著之輥型之磨石。前述研削手段B(24)係位於旋轉筒(26)之軸心之旋轉軸(27)與旋轉驅動源可裝卸地連結,使前述磨粒層B(25)與該被加工物(W)之軸心平行線接觸於前述被加工物(W)之加工部並按壓旋轉。另外,使用比輥型之磨石更廉價之杯型之磨石亦可。Further, as shown in Fig. 13, the grinding means B (24) is an abrasive grain layer B (25) for bonding abrasive grains to each other on a cylindrical carcass surface to a rotating cylinder (26) having a rotating shaft (27). A roll-type grindstone with a surface fixed. The grinding means B (24) is detachably coupled to the rotating shaft of the rotating cylinder (26) and the rotating drive source, and the abrasive layer B (25) and the workpiece (W) are The parallel line of the axis contacts the processed portion of the workpiece (W) and is pressed and rotated. In addition, it is also possible to use a cup-type grindstone which is cheaper than a roll-type grindstone.
此外,研削裝置(1)係前述磨粒層B(25)於被加工物(W)之兩側與其軸心使平行且具有使對向之一對研削手段B(24)(磨石)較理想。研削手段B(24)係可裝卸地設於研削裝置(1)。Further, the grinding device (1) is such that the abrasive layer B (25) is parallel to the axis of the workpiece (W) on both sides thereof and has a pair of grinding means B (24) (grinding stone) ideal. The grinding means B (24) is detachably provided to the grinding device (1).
藉由將前述研削裝置(1)之研削手段A(14)與研削手段B(24)選擇為具有剛性之磨石,成為將被加工物(W)之變形等切除而整理形狀並將外型尺寸研削為所欲公差內之能力優良者。因此,角柱狀與圓柱狀之被加工物(W)之表層部之雜質與外型變形之除去可確實進行。By selecting the grinding means A (14) and the grinding means B (24) of the grinding device (1) as the grinding stone having rigidity, the deformation of the workpiece (W) or the like is cut off to shape the shape and the shape is formed. Dimensional grinding is the ability to perform within the desired tolerances. Therefore, the removal of impurities and external deformation of the surface layer portion of the columnar and cylindrical workpieces (W) can be surely performed.
此外,前述研削裝置(1)之研削手段A(14)與研削手段B(24)之磨石使構成其磨粒層A(15a)與磨粒層B(25)之磨粒之粒度為1種或2種以上,且使固定於前述研磨裝置(2)之研磨手段A(20)與研磨手段B(30)之刷毛材A(21)與刷毛材B(31)之磨粒之粒度為2種以上亦可。Further, the grinding stone A (14) of the grinding device (1) and the grinding stone of the grinding device B (24) have a grain size of 1 for the abrasive grains constituting the abrasive grain layer A (15a) and the abrasive grain layer B (25). The particle size of the abrasive grains of the bristle material A (21) and the bristle material B (31) of the polishing means A (20) and the polishing means B (30) fixed to the polishing apparatus (2) is two or more types. Two or more types are also available.
使由研削裝置(1)之磨石構成之研削手段A(14)或研削手段B(24)之磨粒之粒度為粗研削用F90~F220(JISR6001:1998)或精密研削用#240~#500(JISR6001:1998),使由研磨裝置(2)之研磨刷構成之研磨手段A(20)或研磨手段B(30)之磨粒之粒度為粗研磨用#240~#500(JISR6001:1998)或精密研磨用#800~#1200(JISR6001:1998)亦可。The particle size of the abrasive material A (14) or the grinding tool B (24) composed of the grinding stone of the grinding device (1) is F90 to F220 (JISR6001:1998) for rough grinding or #240~# for precision grinding. 500 (JISR6001:1998), the particle size of the abrasive grains A (20) or the polishing means B (30) composed of the polishing brush of the polishing device (2) is coarsely polished #240 to #500 (JISR6001:1998) ) or precision grinding can also be used #800~#1200 (JISR6001:1998).
將研削手段A(14)或研削手段B(24)之磨粒之粒度設定為粗研削用F90~F220(JISR6001:1998)或精密研削用#240~#500(JISR6001:1998)之2組係根據以下之理由。於於前步驟切斷之被加工物(W)之剖面尺寸或被加工物(W)之角部(C)之直角度為公差外之場合,為了使該被加工物(W)之剖面尺寸或被加工物(W)之角部(C)之直角度為公差內,使為F90~F220之粗粒區分以使可提高切削效率進行研削加工。為了使將稱為碎屑之破裂、缺口容易產生之位置(多結晶矽塊之角部等)之研削加工防止前述碎屑之發生並可進行研削加工,選擇#240~#500之微粉區分並使用較理想。The particle size of the abrasive grains of the grinding means A (14) or the grinding means B (24) is set to two groups of F90 to F220 (JISR6001: 1998) for rough grinding or #240 to #500 (JISR6001: 1998) for precision grinding. For the following reasons. In the case where the cross-sectional dimension of the workpiece (W) cut in the previous step or the straight angle of the corner portion (C) of the workpiece (W) is outside the tolerance, in order to make the cross-sectional dimension of the workpiece (W) Or the straight angle of the corner (C) of the workpiece (W) is within the tolerance, and the coarse particles of F90 to F220 are differentiated so that the cutting efficiency can be improved. In order to prevent the occurrence of the above-mentioned debris and to perform grinding processing in a grinding process called a crack of a chip or a position where a chip is easily generated (a corner portion of a polycrystalline block, etc.), the fine powder of #240 to #500 is selected and It is ideal to use.
[研磨裝置][grinding device]
圖2係顯示本發明之研磨角柱狀之被加工物(W)之研磨裝置(2)。研磨裝置(2)具備:把持結束前述研削加工之被加工物(W)之把持手段(12)、將前述被加工物(W)之側面部(F)與角部(C)研磨加工並微裂痕之除去與將表面粗度微細化之研磨手段A(20)、形成基準面之基準塊(K)、量測被加工物(W)之剖面尺寸之量測手段(18)、將把持被加工物(W)之把持手段(12)移動以使前述被加工物(W)往量測手段(18)與研磨手段A(20)之間移動之移動手段(19)。Fig. 2 is a view showing a polishing apparatus (2) for grinding a workpiece (W) of a columnar shape according to the present invention. The polishing apparatus (2) includes gripping means (12) for holding the workpiece (W) that has been subjected to the grinding processing, and grinding the side surface portion (F) and the corner portion (C) of the workpiece (W) The polishing means A (20) for removing the cracks and the surface roughness is refined, the reference block (K) for forming the reference surface, and the measuring means (18) for measuring the cross-sectional dimension of the workpiece (W), and the holding means are held. The moving means (19) for moving the holding means (12) of the workpiece (W) to move the workpiece (W) between the measuring means (18) and the grinding means A (20).
前述移動手段(19)係與前述研削裝置(1)之移動手段(19)同樣地將把持被加工物(W)之把持手段(12)固定並使量測手段(18)與研磨手段A(20)在被加工物(W)之位置移動以進行該被加工物(W)之量測與研削加工。The moving means (19) fixes the holding means (12) for holding the workpiece (W) in the same manner as the moving means (19) of the grinding apparatus (1), and the measuring means (18) and the grinding means A ( 20) Moving at the position of the workpiece (W) to perform measurement and grinding of the workpiece (W).
前述研磨裝置(2)具備:可將前述被加工物(W)於垂直方向移動且將其柱軸水平載置之基台(11)、具有使載置於該基台(11)之被加工物(W)於與該被加工物(W)之柱軸正交之方向進退動以將該被加工物(W)於前述基台(11)之中心定位之按壓具(34)(參照圖7)與使軸心為被加工物(W)之柱軸之方向且把持該被加工物(W)之兩端之夾持軸(13)且前述夾持軸(13)可將被加工物(W)以其軸心為中心旋轉之把持手段(12)。該夾持軸(13)把持該被加工物(W)。於前述基台(11)降下時前述夾持軸(13)將被加工物(W)以其軸心為中心把持。把持手段(12)係如圖6所示,係將被加工物(W)可「間歇旋轉」或「連續旋轉」地把持。The polishing apparatus (2) includes a base (11) that can move the workpiece (W) in a vertical direction and horizontally mount the column axis, and has a workpiece placed on the base (11). a material (W) that is retracted in a direction orthogonal to a column axis of the workpiece (W) to position the workpiece (W) at a center of the base (11) (refer to the figure) 7) a clamping shaft (13) that holds the shaft center in the direction of the column axis of the workpiece (W) and holds both ends of the workpiece (W), and the aforementioned clamping shaft (13) can process the workpiece (W) A holding means (12) that rotates around its axis. The clamping shaft (13) holds the workpiece (W). When the abutment (11) is lowered, the aforementioned clamping shaft (13) holds the workpiece (W) around its axis. As shown in Fig. 6, the holding means (12) holds the workpiece (W) "intermittently rotated" or "continuously rotated".
把持手段(12)將被加工物(W)可「間歇旋轉」地把持係指於被加工物(W)之研削研磨之位置之形狀為平面之場合,為了將其加工面於於圖1、圖2顯示之Y方向之兩側定位而使把持該被加工物(W)之把持手段(12)之夾持軸(13)以其軸心為中心「間歇旋轉」。The gripping means (12) is capable of "intermittently rotating" the workpiece (W) to the position where the workpiece (W) is ground and polished, and the surface is formed in Fig. 1. 2 shows the positioning on both sides in the Y direction, and the holding shaft (13) of the holding means (12) holding the workpiece (W) "intermittently rotates" around its axis.
若以加工面皆為平面之四角柱狀之多結晶矽塊狀之研削研磨加工為例針對「間歇旋轉」之作動與加工順序說明,使對向之第1組之側面部(F)(參照圖16)位於於圖1、圖2顯示之Y方向之兩側並加工後使旋轉90度並加工第2組之側面部(F)並終了4側面部(F)之加工,使旋轉45度以使對向之第1組之角部(C)(參照圖16)位於於圖1、圖2顯示之Y方向之兩側並加工後使旋轉90度並加工第2組之角部(C),研削研磨加工終了。For the example of the operation and processing sequence of the "intermittent rotation" in the case of a multi-crystal block-shaped grinding and polishing process in which the machined surfaces are all in the shape of a flat surface, the side portion (F) of the first group facing the opposite direction (refer to Fig. 16) is located on both sides of the Y direction shown in Figs. 1 and 2 and is rotated by 90 degrees to machine the side portion (F) of the second group and finish the processing of the side portion (F) of 4, so that the rotation is 45 degrees. The corner portion (C) of the first group (see FIG. 16) is positioned on both sides in the Y direction shown in FIGS. 1 and 2, and is rotated by 90 degrees to process the corner portion of the second group (C). ), the grinding and grinding process is finished.
把持手段(12)將被加工物(W)可「連續旋轉」地把持係指於將被加工物(W)之研削研磨之位置之剖面形狀為圓弧狀之例如圓柱狀之單結晶藍寶石錠之胴體部(B)研削研磨加工之場合或將四角柱狀之單結晶矽塊之四角部(C)研削研磨加工之場合,如圖3、圖4所示,於一側配置研削手段(20)或研磨手段(30),使把持該被加工物(W)之夾持軸(13)以另外輸入設定之旋轉速度「連續旋轉」,進行研削研磨加工。The gripping means (12) allows the workpiece (W) to be "continuously rotated" to hold a single crystal sapphire ingot, for example, a cylindrical shape having a cross-sectional shape at a position where the workpiece (W) is ground and polished. In the case where the body portion (B) is ground and polished, or the four corner portions (C) of the square columnar single crystal block are ground and ground, as shown in Figs. 3 and 4, the grinding means is disposed on one side (20). Or the polishing means (30), the holding shaft (13) holding the workpiece (W) is subjected to a grinding rotation process by continuously inputting the set rotation speed "continuous rotation".
此外,設於前述研削裝置(1)或研磨裝置(2)之把持手段(12)之夾持軸(13)具備把持被加工物(W)之兩端面並量測該被加工物(W)之長度方向之尺寸並使控制手段記憶之機能,其量測結果係運算處理並成為控制後述之移動手段(19)之移動距離之作動信號者。藉由該作動信號所導致之前述移動手段(19)之作動,把持前述被加工物(W)之把持手段(12)之夾持軸(13)在量測手段(18)與研削手段(1)或量測手段(18)與研磨手段(2)之間移動,施加該被加工物(W)之剖面尺寸之量測或研削加工或研磨加工者。另外,量測手段(18)與研削手段(1)或量測手段(18)與研磨手段(2)在夾持軸(13)之間移動亦可。Further, the clamping shaft (13) provided in the grinding device (1) or the holding device (12) of the polishing device (2) is provided with both end faces of the workpiece (W) and measures the workpiece (W). The size in the longitudinal direction and the function of the control means are memorized, and the measurement result is arithmetically processed and becomes an actuation signal for controlling the moving distance of the moving means (19) to be described later. By the action of the moving means (19) caused by the actuation signal, the clamping shaft (13) of the holding means (12) of the workpiece (W) is held by the measuring means (18) and the grinding means (1) Or moving between the measuring means (18) and the polishing means (2), applying the measurement of the cross-sectional dimension of the workpiece (W) or grinding or grinding. Further, the measuring means (18), the grinding means (1) or the measuring means (18) and the polishing means (2) may be moved between the holding shafts (13).
研磨手段A(20)係如圖11與圖12所示,具有旋轉盤(22)及連結於旋轉驅動源用來使該旋轉盤(22)旋轉之旋轉軸(23),且於圓盤狀之表面捆束配置含有磨粒之刷毛材A(21)之研磨刷。前述研磨手段A(20)係與旋轉驅動源可裝卸地連結,將前述刷毛材A(21)之毛前端部面接觸於前述被加工物(W)之加工部並按壓旋轉。As shown in FIGS. 11 and 12, the polishing means A (20) has a rotary disk (22) and a rotary shaft (23) connected to a rotary drive source for rotating the rotary disk (22), and is in the shape of a disk. The surface bundle is provided with an abrasive brush containing abrasive particles A (21). The polishing means A (20) is detachably coupled to the rotary drive source, and the front end portion of the bristle material A (21) is brought into contact with the processed portion of the workpiece (W) to be pressed and rotated.
做為於研磨手段A(20)採用之研磨刷,有將混有磨粒之刷毛材A(21)捆束可裝卸於旋轉盤(22)而於該刷毛材A(21)消耗時僅更換刷毛材A(21)即可之段型研磨刷。此外,亦可使用將刷毛材A(21)對旋轉盤(22)固定安裝並在刷毛材A(21)消耗時與旋轉盤(22)一體更換之杯型研磨刷。本實施形態係使用段型。As the polishing brush used in the polishing means A (20), the bristle material A (21) mixed with the abrasive grains is detachably attached to the rotary disk (22), and is replaced only when the bristle material A (21) is consumed. The brush type A (21) can be used as a segment type abrasive brush. Further, a cup type abrasive brush in which the brush material A (21) is fixedly attached to the rotary disk (22) and replaced with the rotary disk (22) when the brush material A (21) is consumed may be used. In this embodiment, a segment type is used.
研磨裝置(2)具有使對向為前述刷毛材A(21)之毛前端部對被加工物(W)之兩側面接觸之一對研磨手段A(20)(研磨刷)較理想。研磨手段A(20)係可裝卸地設於研磨裝置(2)。The polishing apparatus (2) preferably has one of the front ends of the bristle material A (21) facing the workpiece (W) and the polishing means A (20) (abrasive brush). The polishing means A (20) is detachably provided in the polishing apparatus (2).
此外,使固定於前述研磨裝置(2)之研磨手段A(20)之刷毛材A(21)之磨粒之粒度為2種以上,將含有粒度粗之磨粒之刷毛材A(35)配置於旋轉盤(22)之接近旋轉中心之內輪部,將含有粒度細之磨粒之刷毛材A(36)配置於旋轉盤(22)之遠離旋轉中心之外輪部亦可。Further, the particle size of the abrasive grains of the bristle material A (21) fixed to the polishing means A (20) of the polishing apparatus (2) is two or more, and the bristle material A (35) containing the abrasive grains having a coarse particle size is disposed. In the inner ring portion of the rotating disk (22) near the center of rotation, the bristle material A (36) containing fine-grained abrasive grains may be disposed on the outer disk portion of the rotating disk (22) away from the center of rotation.
在於研磨裝置(2)之研磨手段A(20)使固定之磨粒之粒度為例如以微裂痕之除去為目的之粗研磨用、將其表面粗度微細化之目的之精密研磨用2種之場合,於以往之研磨裝置有將粗研磨用與精密研磨用之裝置分開而設置2台之必要。做為研磨角柱狀之被加工物(W)之研磨刷,可以1個研磨刷提供具備粗研磨用與精密研磨用之雙方之機能之研磨手段A(20),故可以1台之研磨裝置(2)進行角柱狀之被加工物(W)之粗研磨加工與精密研磨加工,可圖設備費用之削減。In the polishing apparatus A (20) of the polishing apparatus (2), the particle size of the fixed abrasive grains is, for example, two types of precision polishing for the purpose of rough polishing for the purpose of removing micro-cracks and fine-graining the surface roughness. In the conventional polishing apparatus, it is necessary to provide two units for separating the rough polishing from the precision polishing device. As a polishing brush for polishing a workpiece (W) having a columnar shape, a polishing device A (20) having both functions of rough polishing and precision polishing can be provided by one polishing brush, so that one polishing device can be used ( 2) The rough grinding process and the precision grinding process of the workpiece (W) in the shape of a column are performed, and the cost of the equipment can be reduced.
研磨裝置(2)具備量測於與柱軸垂直水平方向與垂直方向分別形成一對基準面之基準塊之剖面尺寸與被加工物(W)之剖面尺寸之量測手段(18)。研磨裝置(2)具備使前述把持手段(12)與研磨手段A(20)之其中一方於前述被加工物(W)之柱軸方向至少移動相當於該被加工物(W)之長度之距離之移動手段(19)。The polishing apparatus (2) includes a measuring means (18) for measuring a cross-sectional dimension of a reference block in which a pair of reference faces are formed in a horizontal direction and a vertical direction perpendicular to the column axis, and a cross-sectional dimension of the workpiece (W). The polishing apparatus (2) is provided such that one of the holding means (12) and the polishing means A (20) moves at least in the column axis direction of the workpiece (W) by a distance corresponding to the length of the workpiece (W) The means of movement (19).
研磨裝置(2)係於圓盤狀之表面捆束配置含有磨粒之刷毛材A(21)並使前述刷毛材A(21)之毛前端部對前述被加工物(W)之加工部面接觸並按壓旋轉,故可以一定之按壓力造成之切入量研磨。In the polishing apparatus (2), the bristle material A (21) containing the abrasive grains is bundled on the surface of the disk, and the front end portion of the bristle material A (21) is applied to the processed portion of the workpiece (W). It is contacted and pressed to rotate, so it can be ground by a certain amount of cutting force.
圖4係顯示本發明之研磨角柱狀之被加工物(W)之研磨裝置(2)。研磨裝置(2)具備:把持結束前述研削加工之被加工物(W)之把持手段(12)、將前述被加工物(W)之胴體部(B)研磨加工並微裂痕之除去與將表面粗度微細化之研磨手段B(30)、形成基準面之基準塊(K)、量測被加工物(W)之剖面尺寸之量測手段(18)、將把持被加工物(W)之把持手段(12)移動以使前述被加工物(W)往量測手段(18)與研磨手段B(30)之間移動之移動手段(19)。Fig. 4 is a view showing a polishing apparatus (2) for grinding a workpiece (W) of a columnar shape according to the present invention. The polishing apparatus (2) includes: gripping means (12) for holding the workpiece (W) subjected to the grinding processing, polishing the body portion (B) of the workpiece (W), and removing the micro crack and the surface The polishing means B (30) for refining the thickness, the reference block (K) for forming the reference surface, the measuring means (18) for measuring the cross-sectional dimension of the workpiece (W), and the workpiece (W) to be held The moving means (19) for moving the holding means (12) to move the workpiece (W) between the measuring means (18) and the grinding means B (30).
前述移動手段(19)係與前述同樣地將把持被加工物(W)之把持手段(12)固定並使量測手段(18)與研磨手段B(30)在被加工物(W)之位置移動以進行該被加工物(W)之量測與研削加工。The moving means (19) fixes the holding means (12) for holding the workpiece (W) in the same manner as described above, and the measuring means (18) and the polishing means B (30) are positioned at the workpiece (W). Move to perform measurement and grinding of the workpiece (W).
此外,在被加工物(W)為圓柱狀之場合,研磨裝置(2)之把持手段(12)係將被加工物(W)以其軸心為中心可「連續旋轉」地把持。Further, when the workpiece (W) has a cylindrical shape, the holding means (12) of the polishing apparatus (2) holds the workpiece (W) "continuously rotating" around the axis.
此外,前述研磨裝置(2)之把持手段(12)係與研削裝置(1)之把持手段(12)同樣地將被加工物(W)以其軸心為中心可「連續旋轉」地把持。In the same manner as the gripping means (12) of the grinding device (1), the holding means (12) of the polishing apparatus (2) can be held "continuously rotated" around the axis of the workpiece (W).
此外,研磨手段B(30)係如圖14所示,使用使於具備旋轉軸(33)之圓筒狀之胴體表面使配置有含有磨粒之刷毛材B(31)之輥型之研磨刷。藉由使研磨手段B(30)為輥型之研磨刷,可將研磨效率提升(將研磨時間縮短)。前述研削手段B(30)係位於旋轉筒(32)之軸心之旋轉軸(33)與旋轉驅動源可裝卸地連結,使前述磨粒層B(31)與該被加工物(W)之軸心平行線接觸於前述被加工物(W)之加工部並按壓旋轉。另外,使用比輥型之研磨刷更廉價之段型或杯型之研磨刷亦可。Further, as shown in Fig. 14, the polishing means B (30) is a roll type abrasive brush in which a cylindrical body of a rotating shaft (33) is disposed so that a bristle material B (31) containing abrasive grains is disposed. . By making the polishing means B (30) a roll type abrasive brush, the polishing efficiency can be improved (the polishing time can be shortened). The grinding means B (30) is detachably coupled to the rotary shaft of the rotating cylinder (32) and is coupled to the rotary drive source to cause the abrasive layer B (31) and the workpiece (W). The parallel line of the axis contacts the processed portion of the workpiece (W) and is pressed and rotated. In addition, a segment type or cup type abrasive brush which is cheaper than a roll type polishing brush may be used.
此外,研磨裝置(2)係於圓筒狀之表面配置含有磨粒之刷毛材B(31)並使前述刷毛材B(31)之毛前端部對前述被加工物(W)之加工部面接觸並按壓旋轉,故可以一定之按壓力造成之切入量研磨。Further, in the polishing apparatus (2), the bristle material B (31) containing the abrasive grains is placed on the surface of the cylindrical surface, and the front end portion of the bristle material B (31) is applied to the processed portion of the workpiece (W). It is contacted and pressed to rotate, so it can be ground by a certain amount of cutting force.
藉由將前述研磨裝置(2)之研磨手段A(20)與研磨手段B(30)選擇為具有研磨刷,於研磨加工時前述刷毛材A(21)或刷毛材B(31)之毛前端部周邊在按壓於被加工物(W)之加工面狀態下接觸旋轉,具備將被加工物(W)之表層部數10~100μm前後研磨之能力。因此,為進行將角柱狀與圓柱狀之被加工物(W)之微裂痕之除去且可確實進行將表面粗度微細化之研磨加工者。The polishing means A (20) and the polishing means B (30) of the polishing apparatus (2) are selected to have an abrasive brush, and the front end of the bristle material A (21) or the bristle material B (31) at the time of polishing processing. The periphery of the portion is in contact with and rotated in a state of being pressed against the processed surface of the workpiece (W), and has the ability to polish the surface layer portion of the workpiece (W) by 10 to 100 μm. Therefore, in order to remove the microcracks of the workpiece and the columnar workpiece (W), it is possible to surely perform the polishing process to refine the surface roughness.
此外,使固定於前述研磨裝置(2)之研磨手段B(30)之刷毛材B(31)之磨粒之粒度為2種以上,將該磨粒之粒度粗之刷毛材B(37)於旋轉筒(32)之開始與被加工物(W)按壓接觸之側且將該磨粒之粒度細之刷毛材B(38)於旋轉筒(32)之結束與被加工物(W)按壓接觸並分離之側亦可。Further, the particle size of the abrasive grains of the bristle material B (31) fixed to the polishing means B (30) of the polishing apparatus (2) is two or more, and the briquettes B (37) having a coarse particle size of the abrasive grains are At the beginning of the rotating cylinder (32), the bristle material B (38) having a fine particle size of the abrasive grains is pressed against the workpiece (W) at the end of the pressing contact (W). And the side of the separation can also be.
以研磨圓柱狀之被加工物(W)之輥型之研磨刷可以1個研磨刷提供具備粗研磨用與精密研磨用之雙方之機能之研磨手段B(30),故可以1台之研磨裝置(2)進行角柱狀之被加工物(W)之粗研磨加工與精密研磨加工,可圖設備費用之削減。In the roll type polishing brush which grinds the cylindrical workpiece (W), the polishing means B (30) having the functions of both the rough polishing and the precision polishing can be provided by one polishing brush, so that one polishing device can be used. (2) The rough grinding process and the precision grinding process of the workpiece (W) in the shape of a column are performed, and the cost of the equipment can be reduced.
此外,使前述研磨手段A(20)或研磨手段B(30)之磨粒之粒度為粗研磨用#240~#500(JISR6001:1998)或精密研磨用#800~#1200(JISR6001:1998)之2組係根據以下之理由。以前述粗研磨用之研磨刷之高研磨能力將於被加工物(W)之表層部存在之微裂痕確實除去。為了將在以前述粗研磨用之研磨刷進行之粗研磨加工變粗之表層部之表面粗度微細化並消除於於後步驟切片加工為晶圓時發生之破裂與缺口而以精密研磨用之研磨刷研磨加工較理想。Further, the particle size of the abrasive grains of the polishing means A (20) or the polishing means B (30) is #240 to #500 for coarse polishing (JISR6001:1998) or #800 to #1200 for precision polishing (JISR6001:1998). The two groups are based on the following reasons. The micro-cracks present in the surface layer portion of the workpiece (W) are surely removed by the high polishing ability of the above-mentioned rough polishing brush. In order to refine the surface roughness of the surface layer portion which is roughened by the rough polishing process by the polishing brush for rough polishing, and to eliminate cracks and notches which occur when the wafer is processed into a wafer in a subsequent step, it is used for precision polishing. Abrasive brush grinding is ideal.
此外,藉由使對研削裝置(1)與研磨裝置(2)可裝卸之研削手段A(14)與研磨手段A(20)或研削手段B(24)與研磨手段B(30)之安裝部之規格為共通,可使前述研削裝置(1)本體與研磨裝置(2)本體為相同之規格,故可使裝置本體之製造原價為低價。Further, the grinding means A (14) and the grinding means A (20) or the grinding means A (20) and the grinding means B (30) are attached by means of the grinding device (1) and the polishing device (2). Since the specifications are common, the main body of the grinding device (1) and the main body of the polishing device (2) can be made to have the same specifications, so that the original price of the device body can be made low.
[以研削研磨加工系統進行之加工][Processing by grinding and grinding system]
圖5係顯示於圖1顯示之3台之研削裝置(1)、於圖2顯示之1台之研磨裝置(2)、於圖3顯示之1台之研削裝置(1)、於圖4顯示之1台之研磨裝置(2)、未加工之被加工物(W)之搬入裝置(3)、加工後之被加工物(W)之搬出裝置(4)、具有在前述搬入裝置(3)、研削裝置(1)、研磨裝置(2)、搬出裝置(4)之間將前述被加工物移動之作動臂部(51)與安裝於該作動臂部(51)之前端且將前述被加工物(W)旋轉為既定角度之把持部(52)之移載裝置(5)之配置之配置圖。不圖示之控制手段係具備對加工開始前輸入之初期設定項目與分別設於前述研削裝置(1)與前述研磨裝置(2)之量測手段(18)之量測具輸出之量測信號運算處理並對前述研削裝置(1)與前述研磨裝置(2)之各手段輸出作動信號之機能、控制前述移載裝置(5)之旋回作動與把持被加工物(W)之把持作動之機能。此外,前述控制手段具備控制前述移載裝置(5)在前述搬入裝置(3)、研削裝置(1)、研磨裝置(2)、搬出裝置(4)之間旋回作動之順序之機能亦可。Fig. 5 shows a grinding device (1) shown in Fig. 1 and a polishing device (2) shown in Fig. 2, and a grinding device (1) shown in Fig. 3, which is shown in Fig. 4. One of the polishing device (2), the unprocessed workpiece (W) loading device (3), the processed workpiece (W) carrying device (4), and the loading device (3) a grinding arm unit (51) that moves the workpiece between the grinding device (1), the polishing device (2), and the loading device (4) and a front end that is attached to the operating arm portion (51) and that is processed as described above A configuration diagram in which the object (W) is rotated into a configuration of the transfer device (5) of the grip portion (52) at a predetermined angle. The control means (not shown) includes an initial setting item input before the start of the machining, and a measurement signal outputted by the measuring means (18) provided in the grinding device (1) and the polishing device (2), respectively. The arithmetic processing outputs the function of the actuation signal to the respective means of the grinding device (1) and the polishing device (2), the function of controlling the rotation of the transfer device (5), and the function of holding the workpiece (W). . Further, the control means may have a function of controlling a sequence in which the transfer device (5) is rotated between the carry-in device (3), the grinding device (1), the polishing device (2), and the carry-out device (4).
若如上述構成,基於事先輸入控制手段之往前述搬入裝置(3)、研削裝置(1)、研磨裝置(2)、搬出裝置(4)之旋回作動順序,移載裝置(5)之把持部(52)把持被加工物(W)且作動臂部(51)旋回動作。因此,於搬入裝置(3)上待機之研削研磨未加工之被加工物(W)係可以研削裝置(1)與研磨裝置(2)研削加工與研磨加工終了並往搬出裝置(4)以全自動搬出。According to the above configuration, the gripping unit of the transfer device (5) is moved to the loading device (3), the grinding device (1), the polishing device (2), and the unloading device (4) in advance by the input control means. (52) The workpiece (W) is gripped and the arm portion (51) is rotated. Therefore, the grinding and processing of the unprocessed workpiece (W) on standby in the loading device (3) allows the grinding device (1) and the polishing device (2) to be finished by grinding and polishing, and to carry out the removal device (4). Move out automatically.
此外,移載裝置(5)之把持部(52)係使可以既定角度旋轉,故可去除於加工角柱狀之被加工物(W)之研削裝置(1)與研磨裝置(2)之把持手段(12)之夾持軸(13)設之「間歇旋轉」之旋轉機構,以把持部(52)使被加工物(W)「間歇旋轉」亦可。Further, since the grip portion (52) of the transfer device (5) is rotatable at a predetermined angle, it can be removed by the grinding device (1) and the polishing device (2) for processing the workpiece (W) having a columnar shape. (12) The holding shaft (13) is provided with a "rotary rotation" rotation mechanism, and the workpiece (W) may be "intermittently rotated" by the grip portion (52).
[研削加工與研磨加工][Grinding and grinding processing]
做為對於前述第1之態樣記載之控制手段於加工開始前輸入之初期設定項目之例係包含以下之項目。The example of the initial setting item input before the start of the processing of the control means described in the first aspect includes the following items.
1、由後述之基準塊(K)之一對2基準面形成之已知基準間隔尺寸1. Known reference interval size formed by one of the reference blocks (K) to be described later on the reference plane
2、被加工物(W)之種類與其形狀資訊(角柱之角數或圓柱)2, the type of processed object (W) and its shape information (the number of corners of the corner column or cylinder)
3、被加工物(W)之表層部之研削加工量與研磨加工量3. Grinding amount and grinding amount in the surface layer of the workpiece (W)
4、被加工物(W)之研削加工與研磨加工後之最終剖面尺寸與其公差4. The final section size and tolerance of the workpiece (W) after grinding and grinding
5、將角柱狀之被加工物(W)加工之場合之研削裝置(1)之(後述之)研削手段A(14)、研磨裝置(2)之(後述之)研磨手段A(20)之外型尺寸、磨粒之粒度、旋轉速度、將研削裝置(1)之把持手段(12)與研削手段A(14)與研磨裝置(2)之把持手段(12)與研磨手段A(20)之其中一方以(後述之)移動手段(19)使移動之移動速度5. The grinding means A (14) of the grinding device (1) (described later) and the polishing means A (20) of the polishing device (2) (the latter) are processed in the case of processing the workpiece (W) Dimensional size, grain size of abrasive grains, rotational speed, holding means (12) of grinding device (1) and holding means A (14) and holding means (12) of grinding device (2) and grinding means A (20) One of the moving speeds of the movement by the moving means (19) (described later)
6、將圓柱狀之被加工物(W)加工之場合之研削裝置(1)之(後述之)研削手段B(24)、研磨裝置(2)之(後述之)研磨手段B(30)之外型尺寸、磨粒之粒度、旋轉速度、將研削裝置(1)之把持手段(12)與研削手段B(24)與研磨裝置(2)之把持手段(12)與研磨手段B(30)之其中一方以(後述之)移動手段(19)使移動之移動速度6. The grinding device B (24) of the grinding device (1) (described later) in the case of processing the cylindrical workpiece (W), and the polishing means B (30) of the polishing device (2) (described later) Dimensional size, grain size of abrasive grains, rotational speed, holding means (12) of grinding device (1) and grinding means B (24) and holding means (12) of grinding device (2) and grinding means B (30) One of the moving speeds of the movement by the moving means (19) (described later)
7、於將被加工物(W)之加工部之形狀為如單結晶矽塊之角部或單結晶藍寶石錠之胴體部之圓弧狀或圓柱狀之被加工物(W)加工之場合視為必要之研削裝置(1)與研磨裝置(2)之把持手段(12)之旋轉速度7. In the case where the shape of the processed portion of the workpiece (W) is a circular or cylindrical workpiece (W) such as a corner of a single crystal slab or a sapphire ingot of a single crystal sapphire ingot Rotating speed of the holding means (12) of the grinding device (1) and the grinding device (2)
前述研削加工與研磨加工中之被加工物(W)之移動速度係有必要設定為研削加工痕或研磨加工痕不會殘留之範圍,將被加工物(W)為角柱狀之例如多結晶矽塊之側面部(F)與角部(C)、單結晶矽塊之側面部(F)加工之時係設定為10~40mm/秒,將被加工物(W)為圓柱狀之例如單結晶藍寶石錠之胴體部、單結晶矽塊之角部(C)加工之時係設定為10mm/秒以下。It is necessary to set the moving speed of the workpiece (W) in the grinding and polishing processes to a range in which the grinding marks or the polishing marks do not remain, and the workpiece (W) has a columnar shape such as polycrystalline ruthenium. The side surface portion (F) and the corner portion (C) of the block and the side surface portion (F) of the single crystal raft block are set to be 10 to 40 mm/sec, and the workpiece (W) is cylindrical, for example, single crystal. The corner portion (C) of the body portion of the sapphire ingot and the single crystal block is set to be 10 mm/sec or less.
前述移動速度之設定係研削加工與研磨加工之磨粒之粒度、切入量、旋轉速度之設定條件會產生影響,例如,若磨粒之粒度粗則設定為前述範圍之慢區域,若磨粒之粒度細則有設定為前述範圍之快區域之必要。The setting of the moving speed is affected by the setting conditions of the grain size, the cutting amount, and the rotation speed of the abrasive grains in the grinding process and the polishing process. For example, if the grain size of the abrasive grains is coarse, the slow region of the above range is set, and if the abrasive grains are The granularity specification has to be set as a fast region of the aforementioned range.
由於具備對被加工物(W)於前述研削手段A(14)或研削手段B(24)設定一定之切入量(屬於學術用語:「定尺寸切入」)切削被加工物(W)之變形而整理形狀並將剖面尺寸研削為所欲尺寸之機能、對被加工物(W)於前述研磨裝置(2)之研磨手段A(20)或研磨手段B(30)設定一定之按壓力導致之切入量研磨被加工物之表層部10~100μm前後之機能,故可將剖面尺寸與剖面形狀加工為所欲公差內且可確實除去表層部之微裂痕並將表面粗度微細化。The workpiece (W) is deformed by cutting the workpiece (W) by setting a certain amount of cutting (the academic term: "sizing") to the grinding means A (14) or the grinding means B (24). Finishing the shape and grinding the cross-sectional size into a desired size, and setting a certain pressing force on the workpiece (W) in the polishing means A (20) or the polishing means B (30) of the polishing apparatus (2) Since the surface layer portion of the workpiece is polished to a depth of 10 to 100 μm, the cross-sectional dimension and the cross-sectional shape can be processed into desired tolerances, and the micro-cracks in the surface layer portion can be surely removed and the surface roughness can be made fine.
此外,於研削開始前以研削裝置(1)之量測手段(18)量測之剖面尺寸,在該被加工物(W)之剖面尺寸比將做為初期設定項目而事先輸入控制手段之被加工物(W)之研削加工量與研磨加工量與研削研磨加工後之剖面尺寸累計後之尺寸小之場合不能進行研削加工及/或研磨加工,故該被加工物(W)藉由前述控制手段之運算處理中止研削裝置(1)之研削加工並以把持手段(12)載置於基台(11)上。該被加工物(W)可解除把持手段(12)之把持狀態並往再溶融步驟返回。在再溶融步驟溶解之該被加工物(W)係其原料在例如單結晶之矽或藍寶石等之場合係再度成形為圓柱狀,在多結晶之場合之矽等之場合係再度成形為立方體形狀。In addition, the cross-sectional dimension measured by the measuring means (18) of the grinding device (1) before the start of the grinding, the cross-sectional size ratio of the workpiece (W) is input as a preliminary setting item, and the control means is input in advance. When the amount of grinding (W) and the amount of grinding and the size of the cross-section after grinding and grinding are small, grinding and/or grinding cannot be performed. Therefore, the workpiece (W) is controlled by the above. The arithmetic processing of the means stops the grinding of the grinding device (1) and places it on the base (11) with the holding means (12). The workpiece (W) can be released from the holding state of the holding means (12) and returned to the remelting step. The workpiece (W) which is dissolved in the remelting step is reshaped into a cylindrical shape in the case of, for example, a single crystal ruthenium or sapphire, and is reshaped into a cubic shape in the case of polycrystallization. .
設於前述研削裝置(1)或研磨裝置(2)之量測手段(18)由於把持手段(12)之夾持軸(13)之一方具有於與前述被加工物(W)之柱軸垂直之水平方向隔著已知基準間隔尺寸形成之一對基準面與於與前述柱軸垂直之鉛直方向隔著已知基準間隔尺寸形成之一對基準面之基準塊(K)、使量測方向為前述水平方向並量測前述基準塊之兩側之基準面與被加工物之兩側之研削研磨加工部之間隔尺寸之量測具A(18A)、使量測方向為前述水平方向並量測前述基準塊(K)之上面之基準面與被加工物之上面之研削研磨加工部(W)之高度位置之量測具B(18B)構成。The measuring means (18) provided in the grinding device (1) or the grinding device (2) is perpendicular to the column axis of the workpiece (W) due to one of the clamping shafts (13) of the holding means (12) One of the horizontal direction is formed by a known reference interval dimension, and the reference plane (J) is formed between the reference plane and the vertical direction perpendicular to the column axis by a known reference interval dimension, and the measurement direction is made. Measuring the distance A of the gap between the reference surface on both sides of the reference block and the grinding and polishing portion on both sides of the workpiece in the horizontal direction, and measuring the direction in the horizontal direction The reference surface of the upper surface of the reference block (K) is measured and the measuring device B (18B) of the height position of the grinding and polishing portion (W) on the upper surface of the workpiece.
使用上述之構成,以量測手段(18)如下進行量測。Using the above configuration, the measurement means (18) was carried out as follows.
<1>關於與前述柱軸垂直之水平方向之(使用垂直之基準面之)基準塊(K)之剖面尺寸係於加工開始前做為初期設定項目而基準間隔尺寸事先輸入控制手段。將該基準塊(K)之基準面間以前述量測具A(18A)實測並往控制手段發送。運算處理量測信號,設定對前述基準塊(K)之基準尺寸(剖面尺寸)之量測具A(18A)之量測信號者。<1> The cross-sectional dimension of the reference block (K) in the horizontal direction perpendicular to the column axis (using the vertical reference surface) is used as an initial setting item before the start of machining, and the reference interval size is previously input as a control means. The reference surface of the reference block (K) is measured by the aforementioned measuring instrument A (18A) and transmitted to the control means. The measurement signal is calculated, and the measurement signal of the measuring instrument A (18A) of the reference size (cross-sectional size) of the reference block (K) is set.
<2>關於被加工物(W)之剖面尺寸之量測係將為前述被加工物(W)之剖面尺寸之與前述柱軸垂直之水平方向之加工部間之實際尺寸以量測具A(18A)量測且該量測信號往控制手段發送。該被加工物(W)之量測信號係以在前述<1>設定之量測具A(18A)之基準尺寸之量測信號為基運算處理,可量測被加工物(W)之剖面之實際尺寸者。<2> The measurement system for the cross-sectional dimension of the workpiece (W) is the actual size between the processed portions in the horizontal direction perpendicular to the column axis of the cross-sectional dimension of the workpiece (W). (18A) The measurement is sent and the measurement signal is sent to the control means. The measurement signal of the workpiece (W) is calculated based on the measurement signal of the reference dimension of the measuring tool A (18A) set by the above <1>, and the profile of the workpiece (W) can be measured. The actual size of the person.
<3>關於研削手段A(14)或研削手段B(24)與研磨手段A(20)與研磨手段B(30)之切入量為「0」之基點位置之設定係使前述研削手段A(14)或研削手段B(24)與研磨手段A(20)與研磨手段B(30)之前端部接觸基準塊(K)之基準面,其接觸位置之信號往控制手段發送。運算處理前述研削手段A(14)或研削手段B(24)與研磨手段A(20)與研磨手段B(30)之切入量為「0」之基點位置並記錄於控制手段。<3> The setting of the base point position at which the cutting means A (14) or the grinding means B (24) and the polishing means A (20) and the polishing means B (30) are cut into "0" is the grinding means A ( 14) The grinding means B (24) and the polishing means A (20) and the front end of the polishing means B (30) are in contact with the reference surface of the reference block (K), and the signal of the contact position is transmitted to the control means. The processing means is used to calculate the base point position at which the cutting means A (14) or the grinding means B (24) and the polishing means A (20) and the polishing means B (30) are cut at "0".
<4>關於研削手段A(14)或研削手段B(24)與研磨手段A(20)與研磨手段B(30)之切入量之設定係前述<1><2><3>自動量測與自動設定,該<1><2><3>之運算處理結果基於於加工開始前做為初期設定項目事先輸入控制手段之研削加工與研磨加工後之剖面尺寸進一步運算而研削手段A(14)或研削手段B(24)與研磨手段A(20)與研磨手段B(30)之切入量自動設定者。<4> The setting of the cutting amount of the grinding means A (14) or the grinding means B (24) and the polishing means A (20) and the polishing means B (30) is the above <1> <2> <3> automatic measurement. With the automatic setting, the calculation result of the <1><2><3> is based on the grinding operation and the cross-sectional size after the grinding processing is performed as the initial setting item before the start of the machining, and the grinding means A (14) The cutting amount of the grinding means B (24) and the polishing means A (20) and the polishing means B (30) are automatically set.
另外,「切入量」係指於特別是如研磨刷於加工中變形之手段中無視變形之推進量,與實際上研削或研磨之「切削量」區別使用。In addition, the "cut amount" refers to a difference in the amount of advancement that disregards deformation, particularly in the case where the polishing brush is deformed during processing, and is used in distinction from the "cutting amount" of actual grinding or grinding.
此外,針對對控制手段輸入之初期設定項目與從量測手段(18)發送之量測信號之運算處理、根據該運算處理從前述控制手段往研削裝置(1)與研磨裝置(2)發送之作動信號做補足說明。Further, the arithmetic processing for inputting the initial setting item input to the control means and the measurement signal transmitted from the measuring means (18) is transmitted from the control means to the grinding device (1) and the polishing device (2) based on the arithmetic processing. Actuation signal to make up the instructions.
於由前述初期設定項目之中之被加工物(W)之種類與其形狀資訊(角柱之角數或圓柱)決定之作動信號有例如決定把持手段(12)之把持被加工物(W)之夾持軸(13)之「間歇旋轉」或「連續旋轉」之作動信號。The actuation signal determined by the type of the workpiece (W) and the shape information (the number of corners of the corner post or the cylinder) in the initial setting item, for example, determines the holding of the workpiece (W) by the holding means (12). The actuation signal of "intermittent rotation" or "continuous rotation" of the shaft (13).
有以控制手段往構成研削裝置(1)之基台(11)、把持手段(12)、研削手段A(14)或研削手段B(24)、量測手段(18)、移動手段(19)或構成研磨裝置(2)之基台(11)、把持手段(12)、研磨手段A(20)或研磨手段B(30)、量測手段(18)、移動手段(19)發送而使前述各手段作動之信號。There are a base (11), a holding means (12), a grinding means A (14) or a grinding means B (24), a measuring means (18), and a moving means (19) which constitute the grinding device (1) by a control means. Or the base (11), the holding means (12), the polishing means A (20) or the polishing means B (30), the measuring means (18), and the moving means (19) constituting the polishing apparatus (2) are transmitted to the foregoing The signal of each means of action.
另外,有基於關於量測手段(18)之量測之前述<1><2><3><4>之運算處理之進行被加工物(W)之研削加工與研磨加工後之外型尺寸之調製與微裂痕除去與表面粗度之調整之作動信號。In addition, there is an arithmetic processing based on the above-described <1><2><3><4> measurement by the measuring means (18), and the grinding and processing of the workpiece (W) are carried out. Actuation signal for modulation and micro-crack removal and surface roughness adjustment.
此外,基於以量測具A(18A)量測之基準塊(K)之與柱軸垂直之水平方向之基準面與被加工物(W)之與柱軸方向正交之方向(於圖1~4、圖7、圖8顯示之Y方向)之兩側之加工部之間隔尺寸(剖面尺寸)前述按壓具(34)於前述被加工物(W)之兩側(於圖1~4、圖7、圖8顯示之Y方向)進退動,可將前述被加工物(W)設定於基台(11)之於圖1~4、圖7、圖8顯示之Y方向之中心位置。基於以量測具B(18B)量測之基準塊(K)之上面之基準面與被加工物(W)之加工部之垂直方向(於圖6與圖8顯示之Z方向)之高度位置前述基台(11)上下動,可將前述被加工物(W)之柱軸心設定於研削手段A(14)或研削手段B(24)與研磨手段A(20)與研磨手段B(30)之於圖6與圖8顯示之Z方向之中心位置。In addition, the reference plane in the horizontal direction perpendicular to the column axis of the reference block (K) measured by the measuring tool A (18A) and the direction of the workpiece (W) orthogonal to the column axis direction (in FIG. 1) ~4, FIG. 7 and FIG. 8 show the spacing dimension (cross-sectional dimension) of the processed portions on both sides of the Y-direction). The pressing device (34) is on both sides of the workpiece (W) (in FIGS. 1 to 4, 7 and 8, the Y direction is advanced and retracted, and the workpiece (W) can be set to the center position of the base (11) in the Y direction shown in FIGS. 1 to 4, 7, and 8. The height position of the reference surface of the reference block (K) measured by the measuring tool B (18B) and the vertical direction of the processed portion of the workpiece (W) (the Z direction shown in FIGS. 6 and 8) The base (11) moves up and down, and the column axis of the workpiece (W) can be set to the grinding means A (14) or the grinding means B (24) and the grinding means A (20) and the grinding means B (30). ) is shown in the center position of the Z direction shown in Figs. 6 and 8.
進行載置於基台(11)之被加工物(W)之與柱軸方向正交之水平方向(於圖1~4、圖7、圖8顯示之Y方向)與垂直方向(於圖6與圖8顯示之Z方向)之對心使把持手段(12)之夾持軸(13)可確實把持被加工物(W)之兩端面之中心位置。因此,於研削加工與研磨加工之被加工物(W)之形狀為圓柱狀或圓弧狀之場合,可使把持手段(12)之夾持軸(13)以其軸芯為中心「間歇旋轉」或「連續旋轉」,可確實加工。The horizontal direction of the workpiece (W) placed on the base (11) orthogonal to the column axis direction (the Y direction shown in FIGS. 1 to 4, 7, and 8) and the vertical direction (in FIG. 6) Concentricity with the Z direction shown in Fig. 8 allows the gripping shaft (13) of the gripping means (12) to surely grip the center position of both end faces of the workpiece (W). Therefore, when the shape of the workpiece (W) to be ground and polished is cylindrical or arc-shaped, the clamping shaft (13) of the gripping means (12) can be intermittently rotated about its axis. Or "continuous rotation" can be processed.
於前述量測手段(18)之量測具A(18A)與量測具B(18B)之測定方式係使用使對量測之位置直接接觸並量測之接觸式或放射雷射光來量測之非接觸式之任一種皆可。The measuring means A (18A) and the measuring tool B (18B) of the measuring means (18) are measured by using contact or radiation laser light which directly contacts and measures the position of the measuring. Any of the non-contact types can be used.
此外,前述控制手段具有下述之機能較理想。亦即,Further, the aforementioned control means has the following functions. that is,
1、運算處理對設於前述研削裝置與前述研磨裝置之把持手段之基準塊(K)之一對基準面使研削手段A(14)或研削手段B(24)與研磨手段A(20)與研磨手段B(30)之各前端接觸且前述研削裝置與前述研磨裝置之各手段之切入量成為0之基點位置之機能1. The arithmetic processing applies the grinding means A (14) or the grinding means B (24) and the grinding means A (20) to one of the reference blocks (K) provided in the grinding device and the holding means of the polishing device. The front end of each of the grinding means B (30) is in contact with each other, and the cutting amount of each of the grinding device and the grinding device is a function of a base point position of 0
2、以設於前述研削裝置與前述研磨裝置之量測手段之量測具A(18A)量測前述基準塊(K)之兩側之基準面與被加工物(W)之兩側之加工部之差,以運算處理被加工物(W)之加工部之加工前與加工後之剖面尺寸之機能2. Measuring the reference surface on both sides of the reference block (K) and the two sides of the workpiece (W) by measuring the measuring tool A (18A) provided in the measuring device of the grinding device and the grinding device. The difference between the parts, the processing of the processed part of the workpiece (W) before and after processing
3、執行將載置於設於研削裝置(1)與研磨裝置(2)之基台之被加工物(W)從其水平兩方向以按壓具(34)按壓而定位於該被加工物(W)之與柱軸正交之水平方向之中心位置後,藉由以分別設於前述研削裝置(1)與研磨裝置(2)之量測手段(18)之量測具B(18B)進行之量測來調整前述基台(11)之上下位置,使分別設於前述研削裝置(1)與前述研磨裝置(2)之把持手段(12)之夾持軸(13)把持之前述被加工物(W)之兩端面之夾持位置與前述被加工物(W)之軸芯一致之對心之運算處理之機能3. Performing to position the workpiece (W) placed on the base of the grinding device (1) and the polishing device (2) from the horizontal direction by the pressing device (34) to be positioned on the workpiece ( After the center position in the horizontal direction orthogonal to the column axis, W) is performed by the measuring device B (18B) provided by the measuring means (18) of the grinding device (1) and the polishing device (2), respectively. Measuring the upper and lower positions of the base plate (11) so that the clamping shafts (13) respectively disposed on the grinding device (1) and the holding device (12) of the polishing device (2) are processed. The function of the centering of the opposite ends of the object (W) and the axis of the workpiece (W)
4、對加工開始前輸入之初期設定項目與分別設於前述研削裝置(1)與前述研磨裝置(2)之量測手段(18)之量測具A(18A)與量測具B(18B)輸出之量測信號運算處理並對前述研削裝置(1)與前述研磨裝置(2)之各手段輸出作動信號之機能4. The initial setting items input before the start of the machining and the measuring tools A (18A) and the measuring tools B (18B) respectively provided in the measuring means (18) of the grinding device (1) and the grinding device (2) The output measurement signal calculation process and the function of outputting the actuation signal to each of the above-mentioned grinding device (1) and the aforementioned polishing device (2)
於控制手段設有用來將研削研磨加工系統自動化之各機能,故被加工物(W)之加工部之研削加工與研磨加工可確實進行且可圖省力化。Since the control means is provided with various functions for automating the grinding and polishing system, the grinding and machining of the processed portion of the workpiece (W) can be carried out reliably and can be saved.
此外,研削加工與研磨加工之角柱狀前述被加工物之之做研削研磨加工之被加工物之剖面尺寸之公差為±0.5mm,使該被加工物之2側面部(F)彼此交集之角部(C)之剖面形狀之公差為±0.1度較理想。In addition, the tolerance of the cross-sectional dimension of the workpiece subjected to the grinding and polishing processing of the workpiece of the corner-shaped workpiece of the grinding process and the grinding process is ±0.5 mm, and the two side portions (F) of the workpiece are intersected with each other. The tolerance of the cross-sectional shape of the portion (C) is preferably ±0.1 degrees.
例如於四角柱狀之矽塊中,矽塊之剖面尺寸有剖面125mm*125mm之正方形(稱呼:5英吋)、156mm*156mm之正方形(稱呼:6英吋)、210mm*210mm之正方形(稱呼:8英吋)3種,分別要求之公差為±0.5mm,進一步要求之矽塊之2側面部(F)彼此交集之角部(C)之剖面形狀之公差為±0.1度,故可進行基於剖面尺寸之公差與剖面形狀之公差之研削研磨加工。For example, in a square columnar block, the section size of the block has a square of 125 mm*125 mm (called: 5 inches), a square of 156 mm*156 mm (called 6 inches), and a square of 210 mm*210 mm (named) : 8 inches), the required tolerance is ±0.5mm, and the tolerance of the cross-sectional shape of the corner portion (C) where the two side portions (F) of the two blocks are further required is ±0.1 degrees, so it can be performed. Grinding and grinding based on tolerances of section dimensions and tolerances of section shapes.
此外,研削加工與研磨加工之圓柱狀之前述被加工物(W)之研削研磨加工之被加工物之剖面尺寸之公差為±0.5mm。Further, the tolerance of the cross-sectional dimension of the workpiece subjected to the grinding and polishing of the cylindrical workpiece (W) subjected to the grinding and grinding is ±0.5 mm.
例如於圓柱狀之單結晶藍寶石錠中,剖面尺寸係直徑為2~6英吋(51~154mm)要求之公差為±0.5mm,故可進行基於剖面尺寸之公差之研削研磨加工。For example, in a cylindrical single crystal sapphire ingot, the cross-sectional dimension is 2 to 6 inches (51 to 154 mm) and the required tolerance is ±0.5 mm, so that the grinding and grinding processing based on the tolerance of the cross-sectional dimension can be performed.
使用至此為止說明之研削加工與研磨加工系統在以研削手段A(14)進行研削加工之後,以前述研磨手段A(20)進行研磨加工,進行硬脆性材料之研削加工與研磨加工。The grinding and polishing system described so far is subjected to grinding processing by the grinding means A (14), and then grinding is performed by the polishing means A (20) to perform grinding and polishing of the hard and brittle material.
使用研削裝置(1)之研削手段A(14)或研削手段B(24)之磨粒之粒度為由F90~F220(JISR6001:1998)構成之粗研削用之磨石、磨粒之粒度為由#240~#500(JISR6001:1998)構成之精密研削用磨石,具備研磨裝置(2)之研磨手段A(20)或研磨手段B(30)之磨粒之粒度為由#240~#500(JISR6001:1998)構成之粗研削用之研磨刷、磨粒之粒度為由#800~#1200(JISR6001:1998)構成之粗研削用之研磨刷,以研削手段A(14)或研削手段B(24)使切削量為20μm~700μm、表面粗度為Ry2.0~10.0μm(JISB0601:1994)後,以研磨手段A(20)或研磨手段B(30)使切削量為75μm以上、表面粗度為Ry1.1μm(JISB0601:1994)以下來進行研削加工與研磨加工亦可。The particle size of the abrasive grains using the grinding means A (14) or the grinding means B (24) of the grinding device (1) is a grindstone for coarse grinding and a particle size of the abrasive grains composed of F90 to F220 (JISR6001: 1998). #240~#500(JISR6001:1998) The grinding stone for precision grinding, the grinding grain of the grinding device A (20) or the polishing device B (30) having the polishing device (2) has a particle size of #240~#500 (JIS R6001:1998) The abrasive brush for grinding and grinding, and the abrasive grain having the particle size of coarse grinding for #800~#1200 (JISR6001:1998), grinding device A (14) or grinding means B (24) After the cutting amount is 20 μm to 700 μm and the surface roughness is Ry 2.0 to 10.0 μm (JISB0601: 1994), the cutting amount is 75 μm or more by the polishing means A (20) or the polishing means B (30), and the surface is made. Grinding processing and polishing processing may be performed with a thickness of Ry 1.1 μm (JISB0601:1994) or less.
此外,形成有為研削加工與研磨加工之加工部之側面部(F)與角部(C)之角柱狀之被加工物(W)之加工步驟係以下述之任一之順序進行皆可。Further, the processing steps of forming a workpiece (W) having a columnar shape of the side surface portion (F) and the corner portion (C) of the processing portion for the grinding processing and the polishing processing may be performed in any of the following procedures.
1、側面部(F)之研削加工、角部(C)之研削加工、側面部(F)之粗研磨加工、側面部(F)之精密研磨加工1. Grinding of the side part (F), grinding of the corner (C), rough grinding of the side part (F), and precision grinding of the side part (F)
2、側面部(F)之研削加工、側面部(F)之粗研磨加工、側面部(F)之精密研磨加工、角部(C)之研削加工2. Grinding of the side part (F), rough grinding of the side part (F), precision grinding of the side part (F), and grinding of the corner (C)
3、側面部(F)之粗研削加工、側面部(F)之精密研削加工、角部(C)之研削加工、側面部(F)之粗研磨加工、側面部(F)之精密研磨加工3. Rough grinding of the side part (F), precision grinding of the side part (F), grinding of the corner (C), rough grinding of the side part (F), and precision grinding of the side part (F)
此外,研削加工與研磨加工之加工部之形狀以圓柱狀之胴體部(B)形成之被加工物(W)之加工步驟係以下述之任一之順序進行皆可。Further, the processing steps of the workpiece (W) formed by the cylindrical body portion (B) in the shape of the processing portion of the grinding processing and the polishing processing may be performed in any of the following procedures.
1、研削加工、粗研磨加工、精密研磨加工1. Grinding, rough grinding, precision grinding
2、粗研削加工、精密研削加工、粗研磨加工、精密研磨加工2, rough grinding processing, precision grinding processing, rough grinding processing, precision grinding processing
對不圖示之控制手段如前述設定初期設定項目後,使加工開始開關為ON,開始研削加工與研磨加工。往搬入裝置(3)上搬送來之被加工物(W)係以旋回之移載裝置(5)之把持部(52)把持。如圖6所示,被加工物(W)設置於最初進行加工之研削裝置(1)之基台(11)上。以量測手段(18)量測被加工物(W)之上面,以基台垂直移動以使被加工物(W)之柱軸之垂直位置與把持手段(12)之夾持軸(13)之軸芯之垂直位置一致。如圖7所示,按壓具(34)從水平方向之兩側(Y方向)分別前進且於其中央定位被加工物(W)。接著,把持手段(12)之夾持軸(13)之一方往於圖1顯示之X方向前進並把持於該夾持軸(13)(13)。基台(11)往下方縮。After the initial setting item is set as described above for the control means (not shown), the machining start switch is turned ON, and the grinding process and the grinding process are started. The workpiece (W) conveyed to the loading device (3) is gripped by the grip portion (52) of the transfer device (5). As shown in Fig. 6, the workpiece (W) is placed on the base (11) of the grinding device (1) which is initially processed. Measuring the upper surface of the workpiece (W) by the measuring means (18), moving the base vertically so that the vertical position of the column axis of the workpiece (W) and the clamping shaft (13) of the holding means (12) The vertical positions of the shaft cores are the same. As shown in Fig. 7, the pressing tool (34) advances from both sides (Y direction) in the horizontal direction and positions the workpiece (W) at the center thereof. Next, one of the gripping shafts (13) of the gripping means (12) advances in the X direction shown in Fig. 1 and is held by the gripping shaft (13) (13). The abutment (11) is shrunk downward.
於圖6顯示之把持手段(12)藉由移動手段(19)之作動而往研削手段A(14)(14)間移動。研削手段A(14)(14)之磨粒層A(15a)之前端接觸設於該把持手段(12)之基準塊(K)之垂直方向之基準面,使該研削手段A(14)(14)之磨粒層A(15a)之切入量為0之基點位置記錄於控制手段。The holding means (12) shown in Fig. 6 is moved between the grinding means A (14) (14) by the movement means (19). The front end of the abrasive grain layer A (15a) of the grinding means A (14) (14) contacts the reference surface provided in the vertical direction of the reference block (K) of the holding means (12), so that the grinding means A (14) ( 14) The position of the base point at which the amount of cut of the abrasive grain layer A (15a) is 0 is recorded in the control means.
以上係於被加工物(W)之種類為角柱狀之被加工物(W)或圓柱狀之被加工物(W)共通之作動,於以下以以多結晶矽塊為被加工物(W)時之於安裝有角柱狀用之研削手段A(14)之研削裝置(1)與安裝有圓柱狀用之研磨手段A(20)之研磨裝置(2)配置有搬入裝置(3)、搬出裝置(4)、移載裝置(5)之設備為例,說明其作動之詳細。In the above, the workpiece (W) is a common workpiece (W) or a cylindrical workpiece (W), and the polycrystalline crucible is used as the workpiece (W). In the grinding device (1) to which the grinding device A (14) for the corner column is attached, and the polishing device (2) to which the polishing device A (20) for the column is attached, the loading device (3) and the carrying device are disposed. (4) The equipment of the transfer device (5) is taken as an example to explain the details of its operation.
前述把持手段(12)以移動手段(19)之作動往量測手段(18)移動,如圖8(Y方向)所示,於多結晶矽塊(W)之兩側對向之第1組之側面部(F)之剖面尺寸以量測具A(18A)量測。其測定結果往控制手段發送。The holding means (12) is moved by the moving means (19) to the measuring means (18), as shown in Fig. 8 (Y direction), facing the first group on both sides of the polycrystalline block (W) The cross-sectional dimension of the side portion (F) is measured by the gauge A (18A). The measurement result is sent to the control means.
往前述控制手段發送之測定結果在控制手段內運算處理為實際尺寸,基於該實際尺寸與事先輸入設定之「研削加工後之剖面尺寸」自動設定研削手段A(14)之切入量。The measurement result transmitted to the control means is calculated into the actual size in the control means, and the cutting amount of the grinding means A (14) is automatically set based on the actual size and the "section size after the grinding process" which is previously input and set.
測定剖面尺寸且研削手段A(14)之切入量已設定之前述多結晶矽塊(W)之第1組之兩側面部(F)(F)以移動手段(19)之作動往研削手段A(14)(14)之間移動並研削加工。該兩側面部(F)(F)間之剖面尺寸以量測具A(18A)(18A)確認為公差內。第1組之兩側面部(F)(F)之研削加工終了後,把持手段(12)之夾持軸(13)(13)以旋轉機構旋轉90度,第2組之兩側面部(F)(F)與前述第1組之兩側面部(F)(F)同樣研削加工。在確認剖面尺寸為公差內後,4側面部(F)之研削加工終了。Measuring the cross-sectional size and the cutting amount of the grinding means A (14), the both side faces (F) (F) of the first group of the polycrystalline block (W) set by the moving means (19) are moved to the grinding means A (14) Move between (14) and grind. The cross-sectional dimension between the two side faces (F) (F) is confirmed to be within the tolerance by the measuring tool A (18A) (18A). After the grinding of the both side faces (F) (F) of the first group is completed, the gripping shaft (13) (13) of the gripping means (12) is rotated by 90 degrees by the rotating mechanism, and the both sides of the second group (F) (F) Grinding is performed in the same manner as the both side faces (F) (F) of the first group. After confirming that the section size is within the tolerance, the grinding of the 4 side portions (F) is finished.
將4側面部(F)之研削加工終了後之多結晶矽塊(W)係在把持於把持手段(12)之夾持軸(13)(13)之狀態下返回於圖6顯示之作動開始位置,夾持軸(13)(13)之把持狀態解除而載置於基台(11)上。該多結晶矽塊(W)係前述移載裝置(5)之作動臂部(51)旋回並把持於其把持部(52),載置於為次一加工步驟之角部(C)之研削加工用之研削裝置(1)之基台(11)。以與前述將側面部(F)研削加工之研削裝置(1)同樣之作動順序進行4角部(C)之研削加工。The multi-crystal block (W) after the grinding of the four side portions (F) is returned to the start of the operation shown in FIG. 6 while being held by the gripping shaft (13) (13) of the gripping means (12). At the position, the gripping state of the clamp shaft (13) (13) is released and placed on the base (11). The polycrystalline block (W) is a moving arm portion (51) of the transfer device (5) that is rotated back and held by the grip portion (52) and placed on the corner portion (C) of the next processing step. The base (11) of the grinding device (1) for processing. The grinding of the four corners (C) is performed in the same manner as the grinding device (1) in which the side surface portion (F) is ground.
將4角部(C)之研削加工終了後之多結晶矽塊(W)係與前述同樣地在把持於把持手段(12)之夾持軸(13)(13)之狀態下返回於圖6顯示之作動開始位置,夾持軸(13)(13)之把持狀態解除而載置於基台(11)上。該多結晶矽塊(W)係前述移載裝置(5)之作動臂部(51)旋回並把持於其把持部(52),載置於為次一加工步驟之研磨裝置(2)之基台(11)。以與前述之研削裝置(1)同樣之作動順序進行4側面部(F)之研磨加工。藉此,所有之研削加工與研磨加工終了。The polycrystalline crucible (W) after the grinding of the four corners (C) is returned to the state shown in Fig. 6 in the same manner as described above with the holding shaft (13) (13) of the gripping means (12). At the start position of the display, the gripping state of the clamp shaft (13) (13) is released and placed on the base (11). The polycrystalline block (W) is a moving arm portion (51) of the transfer device (5) that is rotated back and held by the grip portion (52) and placed on the base of the grinding device (2) which is the next processing step. Taiwan (11). The side surface portion (F) is polished in the same manner as the above-described grinding device (1). Thereby, all the grinding and grinding processes are finished.
所有之研削加工與研磨加工終了且載置於研磨裝置(2)之基台(11)上之前述多結晶矽塊(W)係前述移載裝置(5)之作動臂部(51)旋回並把持於其把持部(52),往搬出裝置(4)移載並搬出。All of the above-mentioned polycrystalline crucibles (W) which are placed on the base (11) of the polishing apparatus (2), which are finished by the grinding and polishing processes, are rotated by the moving arm portion (51) of the transfer device (5). The handle is held by the grip unit (52) and transferred to the carry-out device (4).
其次,針對本發明之將以研削手段A(14)或研削手段B(24)研削而將剖面尺寸研削加工為前述加工尺寸之公差內並以研磨手段A(20)或研磨手段B(30)將其表層部之微裂痕除去並將表面粗度微細化之前述多結晶矽塊(W)或單結晶矽塊(W)或單結晶藍寶石錠(W)以線鋸切片加工而形成晶圓之實施例敘述。在實施例係可減低該晶圓之破裂與缺口導致之不良製品之發生率。Next, for the present invention, the grinding means A (14) or the grinding means B (24) will be ground to cut the cross-sectional dimension into the tolerance of the above-mentioned processing size and use the grinding means A (20) or the grinding means B (30). The polycrystalline germanium block (W) or the single crystal germanium block (W) or the single crystal sapphire ingot (W) which is obtained by removing the microcracks of the surface layer portion and refining the surface roughness is processed by a wire saw to form a wafer. The description of the examples. In an embodiment, the incidence of defective articles caused by cracks and nicks of the wafer can be reduced.
【實施例1】[Example 1]
於本實施例1加工之被加工物(W)係如圖15所示,以從1個矽錠使用使為固定磨粒方式之新線鋸切斷之4側面部(F)與直角形狀之4角部(C)構成之四角柱狀之多結晶矽塊(W)。如圖15所示,該多結晶矽塊(W)係切斷形成5列*5列=計25條。拔取位於其4角之多結晶矽塊A(W)並準備。於多結晶矽塊A(W)係如圖16所示,於2側面部(F)形成有膨脹。As shown in Fig. 15, the workpiece (W) processed in the first embodiment is a four-side portion (F) and a right-angled shape which are cut from a single ingot by a new wire saw which is a fixed abrasive type. 4 corners (C) consist of a quadrangular columnar polycrystalline block (W). As shown in Fig. 15, the polycrystalline germanium block (W) was cut into 5 columns * 5 columns = 25 bars. Take out the crystallized block A (W) at its 4 corners and prepare. As shown in Fig. 16, the polycrystalline germanium block A (W) is expanded in the side surface portion (F).
研削裝置(1)之研削手段A(14)係採用於圖9與圖10顯示之杯型之磨石。從表3做為形成磨粒層A(15a)之磨粒之粒度選擇研削能力高之F100(JISR6001:1998)相當之鑽石磨粒。使磨粒層A(15a)之外型尺寸為直徑250mm、寬度為8mm。The grinding means A (14) of the grinding device (1) is a cup-type grinding stone shown in Figs. 9 and 10. From Table 3, as the particle size of the abrasive grains forming the abrasive grain layer A (15a), a diamond abrasive grain equivalent to F100 (JISR6001: 1998) having a high grinding ability was selected. The outer dimension of the abrasive grain layer A (15a) was 250 mm in diameter and 8 mm in width.
將於前述表1、表2顯示之初期設定項目於加工開始前輸入控制手段。將為被加工物(W)之前述四角柱狀之多結晶矽塊(W)載置於研削裝置(1)之基台(11)上,使該研削裝置(1)之加工開始開關ON。The initial setting items shown in Tables 1 and 2 above will be input to the control means before the start of processing. The polycrystalline crucible (W) of the above-mentioned square columnar shape of the workpiece (W) is placed on the base (11) of the grinding device (1), and the machining start switch of the grinding device (1) is turned ON.
研削裝置(1)之按壓具(34)(34)往於圖1、圖7顯示之Y方向內側彼此作動,載置於基台(11)上之前述四角柱狀之多結晶矽塊(W)係其柱軸芯設定於Y方向之中心位置。其次,前述多結晶矽塊(W)之兩端藉由把持手段(12)之夾持軸(13)(13)之作動而把持。移動手段(19)往於圖1顯示之X方向作動將設於夾持軸(13)(13)之基準塊(K)往量測具A(18A)之位置移動。量測該基準塊(K)之剖面尺寸且該其輸出信號往控制手段發送。量測基準塊(K)之剖面尺寸之輸出信號做為相當於於加工開始前輸入之基準面之剖面尺寸(100mm)者記錄於控制手段。The pressing device (34) (34) of the grinding device (1) is moved to the inside in the Y direction shown in Figs. 1 and 7, and the above-mentioned square prism-shaped polycrystalline block (W) placed on the base (11) ) The column axis is set at the center of the Y direction. Next, both ends of the polycrystalline germanium block (W) are held by the action of the clamping shafts (13) (13) of the holding means (12). The moving means (19) moves in the X direction shown in Fig. 1 to move the reference block (K) provided on the clamping shaft (13) (13) toward the measuring tool A (18A). The cross-sectional dimension of the reference block (K) is measured and its output signal is sent to the control means. The output signal of the cross-sectional dimension of the measurement reference block (K) is recorded as a control means corresponding to the cross-sectional dimension (100 mm) of the reference surface input before the start of machining.
藉由移動手段(19)之其次之作動,把持於把持手段(12)之夾持軸(13)之多結晶矽塊(W)往量測具A(18A)移動。該量測具A(18A)如圖8(Y方向)所示將多結晶矽塊(W)之對向之1組之2側面部(F)之間之距離在縱3處*橫3處(計9處)與另1組之2側面部(F)之間之距離在縱3處*橫3處(計9處)總計18處量測。其結果,兩側面部(F)間之距離係156.9~157.6mm(平均157.1mm)。此外,表面粗度係Ry21~27μm(平均24μm),長度係499.6mm。By the second action of the moving means (19), the polycrystalline block (W) held by the clamping shaft (13) of the holding means (12) is moved toward the measuring tool A (18A). The measuring tool A (18A) has the distance between the two side portions (F) of the pair of the polycrystalline germanium blocks (W) as shown in Fig. 8 (Y direction) at the longitudinal direction 3 * the horizontal 3 The distance between (9 points) and the 2 side portions (F) of the other group was measured at a total of 18 places in the vertical 3 places * 3 places (9 places). As a result, the distance between the both side faces (F) was 156.9 to 157.6 mm (average 157.1 mm). Further, the surface roughness was Ry 21 to 27 μm (average 24 μm), and the length was 499.6 mm.
做為被加工物(W)準備之前述多結晶矽塊A(W)之平均剖面尺寸相對於稱呼:6英吋之156mm*156mm之正方形為+1.1mm。因此,有將單側=0.55mm切削之必要,故使切入量為0.7mm。將旋轉速度以研削加工之基準圓周速度30~40m/sec換算為2700min-1。對該研削手段A(14)使前述多結晶矽塊(W)以20mm/sec之速度通過研削2側面部(F)後,使把持手段(12)之夾持軸(13)90度旋轉,將其他2側面部(F)與前述同樣地研削將4側面部(F)之研削加工終了。The average cross-sectional dimension of the above-mentioned polycrystalline germanium block A (W) prepared as the workpiece (W) is +1.1 mm with respect to the square of 156 mm * 156 mm of 6 inches. Therefore, there is a need to cut one side = 0.55 mm, so that the amount of cut is 0.7 mm. The rotation speed was converted to 2700 min -1 at a reference peripheral speed of 30 to 40 m/sec. The grinding means A (14) passes the polycrystalline compact (W) through the side surface portion (F) at a speed of 20 mm/sec, and then the holding shaft (13) of the gripping means (12) is rotated by 90 degrees. The other two side surface portions (F) are ground in the same manner as described above, and the grinding of the four side surface portions (F) is finished.
於將前述之4側面部(F)之研削加工終了後,使把持該多結晶矽塊A(W)之把持手段(12)之夾持軸(13) 45度旋轉,使第1組之角部(C)為對向於兩側之研削手段A(14)之位置。After the grinding of the fourth side portion (F) is completed, the clamping shaft (13) of the holding means (12) holding the polycrystalline block A (W) is rotated by 45 degrees to make the corner of the first group The part (C) is the position of the grinding means A (14) opposite to both sides.
於前述角部(C)之研削加工中,研削手段A(14)之磨粒之粒度與多結晶矽塊A(W)之移動速度係與前述側面部(F)之研削時同條件研削,於與側面部(F)之接合位置發現稱為碎屑之破裂。針對上述問題,將前述研削手段A(14)之磨粒之粒度變更為使變細為#500(JISR6001:1998)之磨石並將多結晶矽塊A(W)之移動速度變更為30mm/sec來研削。其結果,研削量雖變少但可形成沒有如前述之碎屑之發生之C面。In the grinding process of the corner portion (C), the grain size of the abrasive grains of the grinding means A (14) and the moving speed of the polycrystalline block A (W) are ground under the same conditions as those of the side surface portion (F). A crack called a chip is found at the joint position with the side portion (F). In response to the above problem, the grain size of the abrasive grains of the grinding means A (14) was changed to a grinding stone which was reduced to #500 (JISR6001:1998), and the moving speed of the polycrystalline block A (W) was changed to 30 mm/ Sec to grind. As a result, although the amount of grinding is small, it is possible to form the C-face which does not have the occurrence of the aforementioned debris.
因此,使前述把持手段(12)之夾持軸(13) 90度旋轉之其他之2角部(C)之研削亦使研削手段A(14)之磨粒之粒度為#500(JISR6001:1998),與前述同樣地研削來進行4角部(C)之研削加工。其結果,4側面部(F)彼此對向之2側面部(F)間之合計18處之尺寸為156.1~156.6mm(平均156.2mm),4側面部(F)之切削量(=以量測值/2算出之結果)為390~480μm(平均430μm),表面粗度Ry5~8μm(平均7μm)。Therefore, the grinding of the other two corner portions (C) of the holding shaft (13) of the holding means (12) by 90 degrees also causes the grinding grain size of the grinding means A (14) to be #500 (JISR6001:1998). In the same manner as described above, the grinding of the four corner portions (C) is performed. As a result, the total length of the two side portions (F) of the four side portions (F) is 18 to 156.6 mm (average 156.2 mm), and the amount of cutting of the four side portions (F) (= The result of the measurement of /2 was 390 to 480 μm (average 430 μm), and the surface roughness was Ry 5 to 8 μm (average 7 μm).
針對於本實施例使用之磨石之研削加工中之每1次之「最大切削量與其切入量」確認之結果,最大切削量為700μm,當時之切入量為1.0mm。本實施例中之研削加工之單側切削量(550μm)係前述最大切削量(700μm)之範圍內,故可將磨石切入量設定為0.55mm以1次即終了。As a result of confirming the "maximum amount of cutting and the amount of cutting" in the grinding process of the grindstone used in the present embodiment, the maximum cutting amount was 700 μm, and the cutting amount at that time was 1.0 mm. The one-side cutting amount (550 μm) of the grinding process in the present embodiment is within the range of the maximum cutting amount (700 μm), so that the amount of grinding stone cutting can be set to 0.55 mm once.
關於「切削量與切入量」之關係,根據前述之結果可將1次之研削加工中之「切削量=切入量之70%以上」設定為參考,在使用於本實施例使用之磨石進行單側切削量為1.0mm以上之例如1.1mm之研削加工之場合只要在進行第1次之研削加工(切入量:1.0mm、切削量700μm)後進行第2次之研削加工(切入量:0.57mm、切削量400μm)即可。According to the above-mentioned results, the "cutting amount = 70% or more of the cutting amount" in the first grinding process can be set as a reference, and the grinding stone used in the present embodiment can be used for the grinding. When the single-side cutting amount is 1.0 mm or more, for example, a grinding process of 1.1 mm is performed, and the second grinding process (cut amount: 1.0 mm, cutting amount: 700 μm) is performed, and the second grinding process is performed (cut amount: 0.57). Mm, cutting amount 400μm).
將前述研削加工後(研磨加工前)之多結晶矽塊A(W)切斷並觀察內部之結果,於由表面70~90μm之深度有微裂痕。此外,做為參考,將前述研削加工後(研磨加工前)之該多結晶矽塊A(W)使用線鋸切片加工為厚度200μm之晶圓狀之結果,其破裂與缺口等之發生率係3.8%。The polycrystalline niobium block A (W) after the above-mentioned grinding processing (before the polishing processing) was cut and the inside was observed, and micro cracks were formed at a depth of 70 to 90 μm from the surface. Further, as a reference, the polycrystalline tantalum block A (W) after the above-mentioned grinding process (before the polishing process) is processed into a wafer shape having a thickness of 200 μm using a wire saw, and the incidence of cracks, notches, and the like is 3.8%.
於其次之加工使用之研磨裝置(2)之研磨手段A(20)係採用將如於圖11與圖12顯示之粗研磨用之刷毛材A(35)與精密研磨用之刷毛材A(36)之安裝基部以個別之金屬管捆束並使對相同之旋轉盤(22)可裝卸之段型之研磨刷。The polishing means A (20) of the polishing apparatus (2) used in the second processing is a brush material A (35) for rough polishing and a brush material A for precision polishing as shown in Figs. 11 and 12. The mounting base is bundled with individual metal tubes and is capable of being attached to the same rotating disc (22).
該研磨刷之粗研磨用之刷毛材A(35)係將磨粒之粒度選擇於表4顯示之#240(JISR6001:1998)相當之鑽石磨粒固定者。將將其安裝基部以金屬管捆束為ψ23mm之粗度之粗研磨用之刷毛材A(35)準備9根。將該粗研磨用之刷毛材A(35)於旋轉盤(22)之中心直徑210mm之圓周上均等配置且可裝卸地安裝。精密研磨用之刷毛材A(36)係將磨粒之粒度選擇於表4顯示之#800(JISR6001:1998)相當之鑽石磨粒固定者。將將其安裝基部以金屬管捆束為ψ23mm之粗度之粗研磨用之刷毛材A(35)準備24根。將該精密研磨用之刷毛材A(36)於旋轉盤(22)之中心直徑280mm之圓周上均等配置且可裝卸地安裝。The bristle material A (35) for rough grinding of the polishing brush was selected from the diamond abrasive grains of #240 (JISR6001:1998) shown in Table 4 for the particle size of the abrasive grains. Nine pieces of rough-grinding bristle material A (35) whose bundled base was bundled with a metal tube to a thickness of 23 mm was prepared. The rough brushing material A (35) is equally disposed on the circumference of the rotating disk (22) having a center diameter of 210 mm and is detachably attached. The brush material A (36) for precision polishing was selected from the diamond abrasive grains of #800 (JISR6001:1998) shown in Table 4 for the particle size of the abrasive grains. 24 pieces of the rough-grinding bristle material A (35) whose bundled base was bundled with a metal tube to a thickness of 23 mm. The brush material A (36) for precision polishing was equally disposed on the circumference of the rotating disk (22) having a center diameter of 280 mm and was detachably attached.
將前述研磨手段A(20)之加工條件以切入量為0.5mm,以旋轉速度為由研磨加工之基準圓周速度10~20m/sec換算為1400min-1,以研磨之多結晶矽塊A(W)之移動速度為20mm/sec。將4側面部(F)之粗研磨加工與精密研磨加工同時進行,以1步驟將研磨加工終了。The processing conditions of the polishing means A (20) are 0.5 mm in the amount of cut, and the rotational speed is converted to 1400 min -1 from the reference peripheral speed of the polishing process of 10 to 20 m/sec to grind the polycrystalline block A (W). The moving speed is 20mm/sec. The rough grinding process of the four side portions (F) is performed simultaneously with the precision grinding process, and the polishing process is completed in one step.
將前述研磨加工終了之結果,4側面部(F)之彼此對向之2側面部(F)間之合計18處之尺寸係155.9~156.4mm(平均:156.1mm)。此外,切削量係91~97μm(平均:95μm),表面粗度係Ry0.9~1.1μm(平均:1.0μm)。As a result of the completion of the above-mentioned polishing process, the total size of 18 points between the two side surface portions (F) of the four side surface portions (F) is 155.9 to 156.4 mm (average: 156.1 mm). Further, the amount of cut was 91 to 97 μm (average: 95 μm), and the surface roughness was Ry 0.9 to 1.1 μm (average: 1.0 μm).
針對於本實施例使用之前述研磨刷之研磨加工中之「刷毛材A(21)不折彎可切削之最大切削量與其切入量」確認之結果,最大切削量為174μm,當時之切入量為1.0mm。本實施例中之研磨加工之單側切削量(100μm)係前述最大切削量(174μm)之範圍內,故可將磨石切入量設定為0.5mm將研磨加工以1次即終了。With respect to the result of confirming the "maximum amount of cutting and cutting amount of the brush material A (21) which can be cut without bending in the polishing process of the polishing brush used in the present embodiment, the maximum cutting amount is 174 μm, and the amount of cut at that time is 1.0mm. Since the one-side cutting amount (100 μm) of the polishing process in the present embodiment is within the range of the maximum cutting amount (174 μm), the amount of the stone cutting can be set to 0.5 mm, and the polishing process is completed once.
另外,關於研磨加工中之「切削量與切入量」之關係,根據前述之結果將1次之「切削量=切入量之15%~25%」設定為參考。In addition, regarding the relationship between the "cutting amount and the amount of cutting" in the polishing process, the "cutting amount = 15% to 25% of the cutting amount" of one time is set as a reference based on the above result.
以上,將已說明之實施例1之多結晶矽塊A(W)之施加研削加工、粗研磨加工、精密研磨加工之加工結果整理並於表5顯示。The results of the grinding, rough polishing, and precision polishing processing of the polycrystalline germanium block A (W) of the first embodiment described above are summarized and shown in Table 5.
將將前述研削加工與研磨加工後之該多結晶矽塊A(W)使用線鋸切片加工為厚度200μm之晶圓狀之結果,其破裂與缺口等之發生率係1.2%。相對於如前述於研削加工後係3~4%,如於表5顯示藉由使切削量為平均:95μm,使表面粗度為平均:1.0μm之研磨加工,可使其發生率大幅減低。The polycrystalline crucible A (W) after the above-mentioned grinding and polishing was processed into a wafer having a thickness of 200 μm using a wire saw, and the incidence of cracking, chipping, and the like was 1.2%. With respect to the above-described 3-4% after the grinding process, as shown in Table 5, the grinding rate was reduced by an average of: 95 μm, and the surface roughness was 1.0 μm.
【實施例2】[Example 2]
於本實施例2使用之被加工物(W)係如圖17與圖18所示,將以拉升法製造之圓柱狀之單結晶矽錠切斷形成之單結晶矽塊(W)。將前述單結晶矽錠之上下端部切斷除去,準備稱呼長度:300mm(在圖18係高度方向),將實測之長度以299.0~301.0mm之範圍切斷之25條之錠。將該錠如於圖17顯示往固定治具以5列*5列之排列垂直設定。As shown in Fig. 17 and Fig. 18, the workpiece (W) used in the second embodiment is a single crystal crucible (W) formed by cutting a cylindrical single crystal ingot produced by a lift-up method. The lower end portion of the above-mentioned single crystal ruthenium ingot was cut and removed, and a length of 300 mm (in the height direction of FIG. 18) was prepared, and 25 pieces of ingots which were cut in the range of 299.0 to 301.0 mm were actually measured. The ingot is vertically set as shown in Fig. 17 to the fixed jig in an arrangement of 5 columns * 5 columns.
將前述25條之單結晶矽錠使用與前述實施例1同樣之固定磨粒方式之新線鋸將分別成大致直角之4側面部(F)切斷形成準備25條之單結晶矽塊(W)。另外,將各單結晶矽錠之胴體部之一部分做為圓弧寬度使為約25mm之4角部(C)殘留。從該單結晶矽塊(W)任意拔取1條做為被加工物(W)。The above-mentioned 25 single crystal ruthenium ingots were cut into four straight side portions (F) at a substantially right angle by using a new wire saw of the same fixed abrasive method as in the above-mentioned Example 1. ). Further, a part of the body portion of each of the single crystal ruthenium ingots was left as a circular arc width so that the four corner portions (C) of about 25 mm remained. One piece of the single crystal block (W) is arbitrarily taken out as a workpiece (W).
單結晶矽塊(W)之形狀係如顯示於圖18般以4側面部(F)與圓弧狀之4角部(C)構成之四角柱狀。與前述實施例1同樣地將對向之2側面部(F)間之量測合計18處進行之結果,為125.4~126.0mm(平均:125.7mm),長度係300.8mm,表面粗度係Ry22~28μm(平均25μm)。The shape of the single crystal block (W) is a quadrangular columnar shape composed of four side portions (F) and four arcuate portions (C) as shown in Fig. 18 . In the same manner as in the first embodiment, the total amount of the measurement between the opposite side surface portions (F) was 18, and the result was 125.4 to 126.0 mm (average: 125.7 mm), the length was 300.8 mm, and the surface roughness was Ry22. ~28 μm (average 25 μm).
關於研削手段A(14)與研磨手段A(20)之規格係如於前述表2顯示,除了將於研削手段A(14)使用之杯型磨石之磨粒之粒度由表3選擇變更為F180以外係使與前述實施例1相同。將前述於研削手段A(14)使用之杯型磨石之磨粒之粒度變更為F180之理由係根據以下。研削加工與研磨加工之單結晶矽塊(W)之平均剖面尺寸相對於稱呼:5英吋之125mm*125mm之正方形為+0.7mm,其單側切削量=0.35mm,做為切削量甚少。因此,使為比在前述實施例1使用之顯示於表3之F100更細之粒度之F180(JISR6001:1998)者。The specifications of the grinding means A (14) and the grinding means A (20) are as shown in the above Table 2, except that the grain size of the abrasive grains of the cup-type grindstone to be used in the grinding means A (14) is changed from Table 3 to Other than F180, it is the same as that of the above-described first embodiment. The reason why the particle size of the abrasive grains of the cup-type grindstone used in the grinding means A (14) is changed to F180 is as follows. The average cross-sectional dimension of the single-crystal block (W) for grinding and grinding is +0.7 mm for the square of 125 mm*125 mm of 5 inches, and the one-side cutting amount is 0.35 mm, which is rarely cut. . Therefore, it is made to be F180 (JISR6001:1998) having a finer particle size than F100 shown in the above-mentioned Embodiment 1 and shown in Table 3.
研削加工係將準備之單結晶矽塊(W)以夾持軸(13)(13)把持,使其2側面部(F)通過對兩側對向之研削手段A(14)之間,與前述實施例1之多結晶矽塊(W)同樣地使4側面部(F)之研削加工終了。In the grinding processing system, the prepared single crystal block (W) is held by the clamping shaft (13) (13) so that the two side portions (F) pass between the grinding means A (14) opposite to the opposite sides, and The polycrystalline germanium block (W) of the first embodiment described above was similarly finished by the grinding of the four side surface portions (F).
其次,如於表1顯示,以對控制手段事先輸入設定之夾持軸(13)(13)之旋轉速度(87min-1)使單結晶矽塊(W)連續旋轉並使該單結晶矽塊(W)以2mm/sec之低速度通過研削手段A(14),將4角部(C)之研削加工終了。Next, as shown in Table 1, the single crystal block (W) is continuously rotated and the single crystal block is rotated by inputting the rotational speed (87 min -1 ) of the clamp shaft (13) (13) set in advance by the control means. (W) The grinding of the four corners (C) was completed by the grinding means A (14) at a low speed of 2 mm/sec.
其結果,4側面部(F)之彼此對向之2側面部(F)間之合計18處之尺寸為125.3~126.1mm(平均125.7mm),4側面部(F)之切削量(=以量測值/2算出之結果)為283~350μm(平均316μm),4側面部(F)與4角部(C)之表面粗度Ry4~6μm(平均5μm)。As a result, the total length of the two side surface portions (F) of the four side surface portions (F) is 185.3 to 126.1 mm (average 125.7 mm), and the amount of cutting of the four side portions (F) (= The measured value / 2 is a result of 283 to 350 μm (average 316 μm), and the surface roughness of the four side portions (F) and the four corner portions (C) is Ry4 to 6 μm (average 5 μm).
其次之研磨加工係使單結晶矽塊(W)以把持手段(12)連續旋轉並以移動手段(19)以2mm/sec之低速度通過由使粗研磨用之刷毛材A(35)與精密研磨用之刷毛材A(36)對旋轉盤(22)為一體之一對研磨刷構成之研磨手段A(20)之間而使4角部(C)之研磨加工終了。其後,將4側面部(F)之研磨加工與前述實施例1同樣地以移動手段(19)以20mm/sec之移動速度通過研磨手段A(20)之間進行研磨加工。如上述,將所有之研削加工與研磨加工終了。The second grinding process is such that the single-crystal block (W) is continuously rotated by the holding means (12) and passed by the moving means (19) at a low speed of 2 mm/sec, and the brush material A (35) for rough grinding is precision. The polishing brush A (36) is formed by integrating the rotating disk (22) with one of the polishing means A (20) formed by the polishing brush to complete the polishing of the four corner portions (C). Thereafter, the polishing process of the four side surface portions (F) was carried out by the polishing means A (20) at a moving speed of 20 mm/sec by a moving means (19) in the same manner as in the above-described first embodiment. As described above, all the grinding and grinding processes are finished.
將前述研磨加工終了之4側面部(F)之彼此對向之2側面部(F)間之合計18處之尺寸為124.7~125.4mm(平均125.2mm),4側面部(F)之切削量(=以量測值/2算出之結果)為86~100μm(平均93μm),4側面部(F)與4角部(C)之表面粗度Ry0.8~1.0μm(平均0.9μm)。The total of 18 places between the two side surface portions (F) of the four side surface portions (F) where the polishing processing is completed is 124.7 to 125.4 mm (average 125.2 mm), and the cutting amount of the four side portions (F) (=calculated by the measured value/2) is 86 to 100 μm (average 93 μm), and the surface roughness Ry of the four side portions (F) and the four corner portions (C) is 0.8 to 1.0 μm (average 0.9 μm).
以上,將已說明之實施例2之單結晶矽塊(W)之施加研削加工、研磨加工之加工結果整理並於表6顯示。The processing results of the grinding and polishing processes of the single crystal crucible (W) of the second embodiment described above are summarized and shown in Table 6.
將將前述研削加工與研磨加工後之該多結晶矽塊(W)使用線鋸切片加工為厚度200μm之晶圓狀之結果,與實施例1之多結晶矽塊(W)同樣地,藉由使切削量為86~100μm,使表面粗度為平均:1.1μm之研磨加工,其破裂與缺口等之發生率可減低至1.0%以下。The polycrystalline germanium block (W) after the above-mentioned grinding and polishing process was processed into a wafer shape having a thickness of 200 μm by wire sawing, and was similar to the polycrystalline germanium block (W) of the first embodiment. When the amount of cut is 86 to 100 μm and the surface roughness is an average of 1.1 μm, the incidence of cracking, chipping, or the like can be reduced to 1.0% or less.
【實施例3】[Example 3]
於本實施例3使用之被加工物(W)係於圖19所示之單結晶藍寶石錠(W)。剖面尺寸為4英吋(直徑:100±0.5mm)之以拉升法製造。於該單結晶藍寶石錠(W)之胴體部(B)有因製造時之溶融加熱等而發生之雜質附著而形成有凹凸。將其頂部與尾部切斷除去,將長度(在圖19係高度方向)切斷為稱呼長度:200mm,將實測之長度以199.0~201.0mm之範圍並使用。The workpiece (W) used in the third embodiment is a single crystal sapphire ingot (W) shown in Fig. 19. The cross-sectional dimension is 4 inches (diameter: 100 ± 0.5 mm) and is manufactured by a pull-up method. In the body portion (B) of the single crystal sapphire ingot (W), impurities which are generated by melt heating or the like at the time of production adhere to each other to form irregularities. The top and the tail were cut off, and the length (in the height direction of Fig. 19) was cut to a nominal length of 200 mm, and the actually measured length was used in the range of 199.0 to 201.0 mm.
研削裝置(1)之研削手段B(24)與研磨裝置(2)之研磨手段B(30)之規格係如於下表7顯示。The specifications of the grinding means B (24) of the grinding device (1) and the grinding means B (30) of the grinding device (2) are shown in Table 7 below.
研削裝置(1)之研削手段B(24)係採用於圖13顯示之輥型之磨石。從表3做為形成磨粒層A(15a)之磨粒之粒度選擇研削能力高之F100(JISR6001:1998)相當之鑽石磨粒。使磨粒層B(25)之外型尺寸為外型200mm*長度為100mm。將切入量設定為1.5mm,將旋轉速度(由研削加工之基準圓周速度:15~30m/sec換算)設定為2200min-1,使前述輥型磨石旋轉。使為被加工物(W)之單結晶藍寶石錠(W)以把持其柱軸芯之兩端之把持手段(12)之夾持軸(13)往與前述輥型磨石之旋轉方向為反方向以153 min-1之旋轉速度(由於表1顯示:圓柱狀之被加工物(W)之基準圓周速度0.5~1.1mm/sec換算)連續旋轉。The grinding means B (24) of the grinding device (1) is a roller type grinding stone shown in Fig. 13. From Table 3, as the particle size of the abrasive grains forming the abrasive grain layer A (15a), a diamond abrasive grain equivalent to F100 (JISR6001: 1998) having a high grinding ability was selected. The outer dimension of the abrasive layer B (25) is 200 mm* and the length is 100 mm. The cutting amount was set to 1.5 mm, and the rotation speed (converted from the reference circumferential speed of the grinding process: 15 to 30 m/sec) was set to 2200 min -1 to rotate the above-mentioned roll type grindstone. The single crystal sapphire ingot (W) of the workpiece (W) is opposed to the rotation direction of the roll type grindstone by the holding shaft (13) of the holding means (12) holding the both ends of the column axis core The direction is continuously rotated at a rotational speed of 153 min -1 (as shown in Table 1, the reference circumferential speed of the cylindrical workpiece (W) is 0.5 to 1.1 mm/sec).
其次,使單結晶藍寶石錠(W)旋轉並藉由移動手段(19)之作動而使於單結晶藍寶石錠(W)之柱軸方向以2mm/sec之低速度移動,使通過旋轉中之研削手段B(24),將胴體部(B)之研削加工終了。Next, the single crystal sapphire ingot (W) is rotated and moved by the moving means (19) to move the column axis direction of the single crystal sapphire ingot (W) at a low speed of 2 mm/sec, so that the grinding by the rotation is performed. Means B (24), the grinding process of the body part (B) is finished.
將前述研削加工終了之前述單結晶藍寶石錠(W)之胴體部(B)之直徑尺寸沿著該胴體部(B)之柱軸芯測定6處。使把持該單結晶藍寶石錠(W)之把持手段(12)之夾持軸(13) 90度旋轉將其直徑尺寸與前述同樣地測定6處,測定合計12處之直徑尺寸。其結果,為100.3~101.1mm(平均:100.7mm)。此外,表面粗度係Ry5~7μm(平均:6μm)。另外,單結晶藍寶石錠(W)之研削加工係含有於胴體部(B)附著之雜質之除去,不沒有進行切削量之測定記錄。The diameter dimension of the body portion (B) of the single crystal sapphire ingot (W) which was subjected to the above-mentioned grinding process was measured at six places along the column axis of the body portion (B). The holding shaft (13) holding the holding means (12) of the single crystal sapphire ingot (W) was rotated by 90 degrees, and the diameter was measured in the same manner as described above, and the total diameter of 12 places was measured. As a result, it is 100.3 to 101.1 mm (average: 100.7 mm). Further, the surface roughness was Ry 5 to 7 μm (average: 6 μm). Further, the grinding process of the single crystal sapphire ingot (W) contains the removal of impurities adhering to the body portion (B), and the measurement of the amount of cutting is not performed.
於其次之加工使用之研磨裝置(2)之研磨手段B(30)係採用將如於圖14顯示之旋轉筒(32)之一端部側配置粗研磨用之刷毛材B(37),另一端部側配置精密研磨用之刷毛材B(38)之於長度為400mm之1個之旋轉筒(32)將粗研磨用與精密研磨用之雙方一體形成之輥型之研磨刷。In the polishing apparatus B (30) of the polishing apparatus (2) used for the second processing, the bristle material B (37) for rough grinding is disposed on one end side of the rotating cylinder (32) as shown in Fig. 14, and the other end is provided. On the other side, a brush type B (38) for precision polishing is used for a rotary cylinder (32) having a length of 400 mm, and a roller type abrasive brush integrally formed by both the rough polishing and the precision polishing is used.
於前述研磨手段B(30)使用之磨粒之粒徑係前述粗研磨用之刷毛材B(37)將磨粒之粒度選擇於表4顯示之#240(JISR6001:1998)相當之鑽石磨粒固定者。精密研磨用之刷毛材B(38)係將磨粒之粒度選擇於表4顯示之#800(JISR6001:1998)相當之鑽石磨粒固定者。The particle size of the abrasive grains used in the polishing means B (30) is the bristle material B (37) for coarse grinding, and the particle size of the abrasive grains is selected from the diamond abrasive grains of #240 (JISR6001:1998) shown in Table 4. Fixed. The bristle material B (38) for precision polishing was selected from the diamond abrasive particles of #800 (JISR6001:1998) shown in Table 4 for the particle size of the abrasive grains.
此外,使前述粗研磨用之刷毛材B(37)與精密研磨用之刷毛材B(38)之各自之外型尺寸(毛前方之直徑)為ψ150mm*(旋轉筒(32)之軸芯方向之長度)200mm。Further, the outer dimensions (diameter of the front side) of the bristle material B (37) for rough grinding and the bristle material B (38) for precision polishing are ψ150 mm* (the direction of the core of the rotating cylinder (32)) The length is 200mm.
將切入量設定為0.5mm,將旋轉速度(由研磨加工之基準圓周速度:10~20m/sec換算)設定為2000min-1,使前述輥型研磨刷旋轉。使為被加工物(W)之單結晶藍寶石錠(W)以把持其柱軸芯之兩端之把持手段(12)之夾持軸(13)往與前述輥型磨石之旋轉方向為反方向以153 min-1之旋轉速度(由於表1顯示:圓柱狀之被加工物(W)之基準圓周速度0.5~1.1mm/sec換算)連續旋轉。The cutting amount was set to 0.5 mm, and the rotation speed (converted from the reference circumferential speed of the polishing process: 10 to 20 m/sec) was set to 2000 min -1 to rotate the above-described roll type polishing brush. The single crystal sapphire ingot (W) of the workpiece (W) is opposed to the rotation direction of the roll type grindstone by the holding shaft (13) of the holding means (12) holding the both ends of the column axis core The direction is continuously rotated at a rotational speed of 153 min -1 (as shown in Table 1, the reference circumferential speed of the cylindrical workpiece (W) is 0.5 to 1.1 mm/sec).
其次,使單結晶藍寶石錠(W)旋轉並藉由移動手段(19)之作動而使於單結晶藍寶石錠(W)之柱軸方向以2mm/sec之低速度移動,使通過旋轉中之研磨手段B(30),將胴體部(B)之研磨加工終了。Next, the single crystal sapphire ingot (W) is rotated and moved by the moving means (19) to move the column axis direction of the single crystal sapphire ingot (W) at a low speed of 2 mm/sec, so that the grinding by the rotation is performed. Means B (30) ends the grinding process of the body portion (B).
將前述研磨加工終了之前述單結晶藍寶石錠(W)之胴體部(B)之直徑尺寸沿著該胴體部(B)之柱軸芯測定6處。使把持該單結晶藍寶石錠(W)之把持手段(12)之夾持軸(13) 90度旋轉將其直徑尺寸與前述同樣地測定6處,測定合計12處之直徑尺寸。其結果,為100.2~100.9mm(平均:100.6mm)。此外,其切削量係94~102μm(平均:98μm),表面粗度係Ry0.8~1.2μm(平均:1.0μm)。The diameter of the body portion (B) of the single crystal sapphire ingot (W) which was subjected to the above-mentioned polishing process was measured at six places along the column axis of the body portion (B). The holding shaft (13) holding the holding means (12) of the single crystal sapphire ingot (W) was rotated by 90 degrees, and the diameter was measured in the same manner as described above, and the total diameter of 12 places was measured. As a result, it is 100.2 to 100.9 mm (average: 100.6 mm). Further, the amount of cut was 94 to 102 μm (average: 98 μm), and the surface roughness was Ry 0.8 to 1.2 μm (average: 1.0 μm).
以上,將已說明之實施例2之單結晶矽塊(W)之施加研削加工、研磨加工之加工結果整理並於表7顯示。The results of the grinding and polishing processes of the single-crystal block (W) of the second embodiment described above are summarized and shown in Table 7.
將將前述研削加工與研磨加工後之該單結晶藍寶石錠(W)使用線鋸切片加工為厚度200μm之晶圓狀之結果,與實施例1、實施例2之多結晶矽塊(W)、單結晶矽塊(W)同樣地,藉由使切削量為94~102μm,使表面粗度為平均:1.0μm之研磨加工,其破裂與缺口等之發生率可減低至1.0%以下。The single crystal sapphire ingot (W) after the above-mentioned grinding and polishing process is processed into a wafer shape having a thickness of 200 μm using a wire saw, and the polycrystalline germanium block (W) of the first embodiment and the second embodiment. In the same manner, the single crystal lumps (W) can be reduced by a grinding amount of 94 to 102 μm to a surface roughness of 1.0 μm, and the incidence of cracks, notches, and the like can be reduced to 1.0% or less.
(變更例)(change example)
如於圖20顯示之水晶藍伯特以把持手段(12)把持之被加工物(W)之面不是水平之場合係於把持手段(12)之前端連結配合前述被加工物(W)之前端之形狀之夾持輔助構件(不圖示),透過該夾持輔助構件把持被加工物(W)亦可。As shown in Fig. 20, the crystal blue Bert is not horizontal when the surface of the workpiece (W) held by the holding means (12) is attached to the front end of the holding means (12) and the front end of the workpiece (W). The shape of the holding auxiliary member (not shown) may hold the workpiece (W) through the holding assisting member.
本發明係雖係針對關於單結晶矽塊、單結晶矽塊、單結晶藍寶石錠之研削研磨之發明說明,但並非限定於此等者。例如,關於用於結晶系太陽電池面板等各種半導體基板之矽晶圓、水晶振動子等用於電子元件之水晶晶圓、用於電子元件或光學基板之石英晶圓、用於LED基板等之藍寶石晶圓、GaAs晶圓、GaP晶圓、GaN晶圓、用於動力元件等之SiC單結晶晶圓、用於SAW過濾器之LiTaO3晶圓、LiNbO3晶圓、用於超高速半導體元件之InP晶圓等硬脆性材料全體之晶圓之製造中之錠與塊之研削加工與研磨加工亦可適用。關於該被加工物之原料並非限於前述者,亦以其他硬脆性材料為對象,關於形狀不僅角柱狀與圓柱狀,亦以包含如水晶藍伯特之複雜形狀(異形狀)之柱狀體(參照圖20)之柱狀體全體為對象者。The present invention is directed to the invention of grinding and polishing of a single crystal slab, a single crystal slab, and a single crystal sapphire ingot, but is not limited thereto. For example, it is used for crystal wafers for electronic components such as germanium wafers and crystal vibrators for various semiconductor substrates such as crystal-based solar cell panels, quartz wafers for electronic components or optical substrates, and LED substrates. Sapphire wafers, GaAs wafers, GaP wafers, GaN wafers, SiC single crystal wafers for power components, LiTaO 3 wafers for SAW filters, LiNbO 3 wafers, for ultra-high-speed semiconductor components It is also applicable to the grinding and polishing of ingots and blocks in the manufacture of wafers of hard and brittle materials such as InP wafers. The material of the workpiece is not limited to the above, and other hard and brittle materials are used, and the shape is not only a columnar shape and a columnar shape, but also a columnar body including a complicated shape (heteromorphic shape) such as crystal bluebert ( The entire columnar body of Fig. 20) is targeted.
根據本發明之研削裝置或研削方法,即使將成為由硬脆性材料構成之錠以線鋸等切斷形成之被加工物(W)之角柱狀之塊之剖面尺寸與直角度為公差外之場合,藉由使前述研削手段A(14)或研削手段B(24)為磨石之研削機能,可將該被加工物(W)之表層之雜質與變形除去並使剖面尺寸為±0.5mm之公差內。另外,可使被加工物(W)之形狀為角柱狀之場合之側面部(F)交差形成之角部(C)之直角度為±0.1度之公差內。此外,藉由使其後步驟之研磨手段A(20)或研磨手段B(30)為研磨刷,可將將前述研削加工終了之前述被加工物(W)之表層之微裂痕除去,使表面粗度為Ry1.1μm(JISB0601:1994)。因此,於於次步驟中將該被加工物(W)使用線鋸等切片加工為數百μm之厚度之晶圓時可減低於前述切片加工之際發生之破裂與缺口導致之不良製品之發生率。According to the grinding device or the grinding method of the present invention, even if the cross-sectional dimension and the straight angle of the block of the workpiece (W) formed by the wire saw or the like formed of the hard and brittle material are cut out, the straight angle is outside the tolerance. By making the grinding means A (14) or the grinding means B (24) a grinding function of the grindstone, the impurities and deformation of the surface layer of the workpiece (W) can be removed and the cross-sectional dimension is ±0.5 mm. Within tolerances. Further, the straight angle at which the corner portion (C) where the side surface portion (F) of the workpiece (W) is formed into a corner column shape can be within a tolerance of ±0.1 degrees. Further, by using the polishing means A (20) or the polishing means B (30) in the subsequent steps as the polishing brush, the microcracks of the surface layer of the workpiece (W) which has been subjected to the grinding process can be removed to make the surface The thickness was Ry 1.1 μm (JISB0601: 1994). Therefore, in the sub-step, when the workpiece (W) is sliced into a wafer having a thickness of several hundred μm using a wire saw or the like, the occurrence of defective products due to cracks and nicks occurring during the slicing process can be reduced. rate.
此外,藉由使對研削裝置(1)與研磨裝置(2)可裝卸之研削手段A(14)與研磨手段A(20)或研削手段B(24)與研磨手段B(30)之安裝部之規格為共通,可使前述研削裝置(1)本體與研磨裝置(2)本體為相同之規格,故可使裝置本體之製造原價為低價。另外,於前述研削裝置(1)與研磨裝置(2)安裝之把持被加工物(W)之把持手段(12)之夾持軸(13)係可「間歇旋轉」或「連續旋轉」。因此,可使形狀為角柱狀或圓柱狀之被加工物(W)之研削加工與研磨加工容易。Further, the grinding means A (14) and the grinding means A (20) or the grinding means A (20) and the grinding means B (30) are attached by means of the grinding device (1) and the polishing device (2). Since the specifications are common, the main body of the grinding device (1) and the main body of the polishing device (2) can be made to have the same specifications, so that the original price of the device body can be made low. Further, the gripping shaft (13) of the gripping means (12) for holding the workpiece (W) attached to the grinding device (1) and the polishing device (2) can be "intermittently rotated" or "continuously rotated". Therefore, it is possible to facilitate the grinding and polishing of the workpiece (W) having a rectangular columnar shape or a cylindrical shape.
此外,具備對前述搬入裝置(3)、研削裝置(1)、研磨裝置(2)、搬出裝置(4)之各裝置載置被加工物(W)並進行取出之移載裝置(5),將移載裝置(5)、研削裝置(1)與研磨裝置(2)之各步驟以控制手段自動化。故被加工物之加工部之研削加工與研磨加工可確實進行且可圖省力化。Further, a transfer device (5) that mounts and processes the workpiece (W) on each of the loading device (3), the grinding device (1), the polishing device (2), and the loading device (4) is provided. The steps of the transfer device (5), the grinding device (1) and the grinding device (2) are automated by control means. Therefore, the grinding and polishing of the processed portion of the workpiece can be carried out reliably and can be saved.
以具備具備將被加工物之表層部以一定之切入量研削、將該被加工物之表層部之雜質與柱軸方向之變形除去並使剖面尺寸成為所欲尺寸之研削手段、將結束前述研削之被加工物之表層部以一定之按壓力研磨、除去該被加工物之表層部之微裂痕並使表面粗糙度微細化之研磨手段之研削研磨裝置(6)之研削研磨加工系統為第2實施形態說明。在此係僅針對與第1實施形態相異支點說明。The grinding machine is provided with a grinding device that cuts the surface layer portion of the workpiece with a constant amount of cutting, removes impurities in the surface layer portion of the workpiece and the column axis direction, and has a desired cross-sectional dimension. The grinding and polishing system of the grinding and polishing device (6) of the polishing means for polishing the surface layer portion of the workpiece with a certain pressing force and removing the micro-cracks of the surface portion of the workpiece and miniaturizing the surface roughness is the second Description of the embodiments. Here, only the difference from the first embodiment will be described.
圖21係顯示本發明之研削與研磨角柱狀之被加工物(W)之研削研磨裝置(6)。研削研磨裝置(6)具備把持被加工物(W)之把持手段(12)、將被加工物(W)之側面部(F)與角部(C)研削加工之研削手段A(14)、將研削加工結束後之被加工物(W)之側面部(F)與角部(C)研磨加工之研磨手段A(20)、形成基準面之基準塊(K)、量測被加工物(W)之剖面尺寸之量測手段(18)、將把持被加工物(W)之把持手段(12)移動以使前述被加工物(W)往量測手段(18)與研削手段A(14)之間移動之移動手段(19)。Fig. 21 is a view showing a grinding and polishing apparatus (6) for grinding and grinding a workpiece (W) of a columnar shape according to the present invention. The grinding and polishing device (6) includes a holding means (12) for gripping the workpiece (W), and a grinding means A (14) for grinding the side surface portion (F) and the corner portion (C) of the workpiece (W), The polishing means A (20) for polishing the side surface portion (F) and the corner portion (C) of the workpiece (W) after the completion of the grinding process, the reference block (K) for forming the reference surface, and the workpiece to be processed ( a measuring means (18) for the cross-sectional dimension of W), and a holding means (12) for holding the workpiece (W) to move the workpiece (W) to the measuring means (18) and the grinding means A (14) ) Moving means of moving between (19).
前述移動手段(19)係使把持被加工物(W)之把持手段(12)在量測手段(18)與研削手段A(14)與研磨手段A(20)之間移動以量測被加工物(W)或將被加工物(W)研削加工與研磨加工。但將把持被加工物(W)之把持手段(12)固定並使量測手段(18)與研削手段A(14)與研磨手段A(20)在被加工物(W)之位置移動以進行該被加工物(W)之量測與研削加工與研磨加工亦可。The moving means (19) moves the holding means (12) for holding the workpiece (W) between the measuring means (18) and the grinding means A (14) and the grinding means A (20) to measure the processed The object (W) or the workpiece (W) is ground and polished. However, the holding means (12) for holding the workpiece (W) is fixed, and the measuring means (18) and the grinding means A (14) and the grinding means A (20) are moved at the position of the workpiece (W) to carry out The measurement of the workpiece (W), the grinding process, and the grinding process are also possible.
研削手段A(14)係與第1實施形態同樣地使用杯型之磨石。此外,研磨手段A(20)係與第1實施形態同樣地使用段型之研磨刷。In the grinding means A (14), a cup type grindstone is used in the same manner as in the first embodiment. Further, in the polishing means A (20), a segment type abrasive brush is used in the same manner as in the first embodiment.
圖22係顯示本發明之研削與研磨圓柱狀之被加工物(W)之研削研磨裝置(6)。研削研磨裝置(6)具備把持被加工物(W)之把持手段(12)、將被加工物(W)之胴體部(B)研削加工之研削手段B(24)、將研削加工結束後之被加工物(W)之胴體部(B)研磨加工之研磨手段B(30)、形成基準面之基準塊(K)、量測被加工物(W)之剖面尺寸之量測手段(18)、將把持被加工物(W)之把持手段(12)移動以使前述被加工物(W)往量測手段(18)與研削手段B(24)之間移動之移動手段(19)。Fig. 22 is a view showing a grinding and polishing apparatus (6) for grinding and grinding a cylindrical workpiece (W) according to the present invention. The grinding and polishing device (6) includes a holding means (12) for gripping the workpiece (W), and a grinding means B (24) for grinding the body portion (B) of the workpiece (W), and after the grinding processing is completed The polishing means B (30) for polishing the body portion (B) of the workpiece (W), the reference block (K) for forming the reference surface, and the measuring means for measuring the cross-sectional dimension of the workpiece (W) (18) And a moving means (19) for moving the holding means (12) of the workpiece (W) to move the workpiece (W) between the measuring means (18) and the grinding means B (24).
前述移動手段(19)係與前述同樣地將把持被加工物(W)之把持手段(12)固定並使量測手段(18)與研削手段B(24)與研磨手段B(30)在被加工物(W)之位置移動以進行該被加工物(W)之量測與研削加工與研磨加工亦可。In the same manner as described above, the moving means (19) fixes the holding means (12) for holding the workpiece (W), and the measuring means (18) and the grinding means B (24) and the grinding means B (30) are The position of the workpiece (W) is moved to perform the measurement of the workpiece (W), the grinding process, and the grinding process.
研削手段B(24)係與第1實施形態同樣地使用輥型之磨石。此外,研磨手段B(30)係與第1實施形態同樣地使用輥型之研磨刷。另外,使用比輥型之磨石低價之杯型之磨石或比輥型之研磨刷低價之杯型或段型之研磨刷亦可。In the grinding means B (24), a roll type grindstone is used in the same manner as in the first embodiment. Further, in the polishing means B (30), a roll type polishing brush is used in the same manner as in the first embodiment. In addition, it is also possible to use a cup-type grindstone which is lower than a roll-type grindstone or a cup-type or segment-type grindstone which is lower than a roll-type grindstone.
進行角柱狀之被加工物(W)與圓柱狀之被加工物(W)之研削加工與研磨加工之研削研磨裝置(6)皆藉由使固定於把持手段(12)之被加工物(W)從圖中左方往右方相對移送來依研削加工與研磨加工之順序進行。The grinding and polishing device (6) for performing the grinding and polishing of the workpiece (W) in the shape of a column and the workpiece (W) in the cylindrical shape is performed by the workpiece to be fixed to the holding means (12) (W) ) The transfer from the left to the right in the figure is performed in the order of grinding and grinding.
此外,將研削手段A(14)與研磨手段A(20)之至少其一複數個連接亦可。例如,在圖23係對1對之研削手段A(14)使2對之研磨手段A(20)連接。在此場合,藉由使含有於配置於同圖左方之研磨手段A(20)之刷毛材A(21)之磨粒之粒度較粗並使含有於配置於同圖右方之研磨手段A(20)之刷毛材A(21)之磨粒之粒度較細,以研削手段A(14)研削加工之後可進行2階段之研磨加工。此外,在研削加工產生之凹凸過大而以研磨手段A(20)之加工能力難以使此凹凸成為平滑之場合等想要使研磨加工之能力提升之場合可使含有於所有之研磨手段A(20)之刷毛材A(21)之磨粒之粒度大致相同。Further, at least a plurality of the grinding means A (14) and the polishing means A (20) may be connected. For example, in Fig. 23, a pair of grinding means A (14) is used to connect two pairs of polishing means A (20). In this case, the abrasive grains included in the bristle material A (21) disposed on the polishing means A (20) on the left side of the same figure have a coarse particle size and are contained in the polishing means A disposed on the right side of the same figure. (20) The abrasive grains of the brush material A (21) have a fine particle size, and can be subjected to two-stage grinding processing after the grinding method A (14). In addition, when the unevenness due to the grinding process is too large and the processing ability of the polishing means A (20) is difficult to smooth the unevenness, etc., it is possible to increase the polishing ability, and it is possible to include all the polishing means A (20). The abrasive grains of the brush material A (21) have substantially the same particle size.
此外,雖未圖示,於進行圓柱狀之被加工物(W)之研削與研磨之研削研磨裝置(6)亦同樣地可將研削手段B(20)與研磨手段B(30)之至少其一複數個連接。Further, although not shown, the grinding means B (20) and the polishing means B (30) can be at least similar to the grinding and polishing apparatus (6) for performing the grinding and polishing of the cylindrical workpiece (W). A plurality of connections.
藉由使對研削研磨裝置(6)可裝卸之研削手段A(14)與研磨手段A(20)或研削手段B(24)與研磨手段B(30)之安裝部之規格為共通,可將此等更換。藉此,在例如於圖21與圖22所示之研削研磨裝置(6)之場合係可將研磨手段與研削手段更換而使為具備2對之研磨手段A(20)或研磨手段B(30)之研磨裝置(2)。此外,可將研削手段與研磨手段更換而使為具備2對之研削手段A(14)或研削手段B(24)之研削裝置(1)。藉由使構成各自之磨粒層之磨粒之粒度或含有於各自之刷毛材之磨粒之粒度為大致相同,可縮短加工時間。此外,藉由使配置於同圖左方之磨粒之粒度較粗並使配置於同圖右方之之磨粒之粒度較細,可進行2階段之研削加工或研磨加工。另外,例如圖23所示之研削研磨裝置(6)之場合,可將研磨手段與研削手段更換而使為具備3對之研磨手段A(20)或研磨手段B(30)之研磨裝置(2)。此外,可將研削手段與研磨手段更換而使為具備3對之研削手段A(14)或研削手段B(24)之研削裝置(1)。或者,藉由將同圖左右方向之中央之研磨手段A(20)或研磨手段B(30)更換為研削手段A(14)或研削手段B(24),可於進行2階段之研削加工後進行研磨加工。By making the grinding means A (14) detachable from the grinding and polishing device (6) common to the specifications of the mounting means of the polishing means A (20) or the grinding means B (24) and the polishing means B (30), These replacements. Therefore, in the case of the grinding and polishing apparatus (6) shown in FIG. 21 and FIG. 22, for example, the polishing means and the grinding means can be replaced to provide two pairs of polishing means A (20) or polishing means B (30). Grinding device (2). Further, the grinding means and the grinding means can be replaced to form a grinding device (1) having two pairs of grinding means A (14) or grinding means B (24). The processing time can be shortened by making the particle size of the abrasive grains constituting the respective abrasive grains or the particle size of the abrasive grains contained in the respective bristle materials substantially the same. Further, by making the particle size of the abrasive grains disposed on the left side of the same figure thick and the particle size of the abrasive grains disposed on the right side of the same figure to be fine, the two-stage grinding process or the polishing process can be performed. Further, for example, in the case of the grinding and polishing apparatus (6) shown in Fig. 23, the polishing means and the polishing means can be replaced to form a polishing apparatus (3) having three pairs of polishing means A (20) or polishing means B (30). ). Further, the grinding means and the grinding means can be replaced to form a grinding device (1) having three pairs of grinding means A (14) or grinding means B (24). Alternatively, by replacing the polishing means A (20) or the polishing means B (30) in the center in the left-right direction with the grinding means A (14) or the grinding means B (24), it is possible to perform the two-stage grinding process. Grinding is performed.
圖24係顯示於圖1顯示之研削裝置(1)、於圖2顯示之研磨裝置(2)、於圖21顯示之研削研磨裝置(6)、於圖22顯示之研削研磨裝置(6)、未加工之被加工物(W)之搬入裝置(3)、加工後之被加工物(W)之搬出裝置(4)、具有在前述搬入裝置(3)、研削裝置(1)、研磨裝置(2)、搬出裝置(4)之間將前述被加工物移動之作動臂部(51)與安裝於該作動臂部(51)之前端且將前述被加工物(W)旋轉為既定角度之把持部(52)之移載裝置(5)之配置之配置圖。不圖示之控制手段係具備對加工開始前輸入之初期設定項目與分別設於前述研削裝置(1)與前述研磨裝置(2)與研削研磨裝置(6)之量測手段(18)之量測具輸出之量測信號運算處理並對前述研削裝置(1)與前述研磨裝置(2)與研削研磨裝置(6)之各手段輸出作動信號之機能、控制前述移載裝置(5)之旋回作動與把持被加工物(W)之把持作動之機能。Figure 24 is a grinding device (1) shown in Figure 1, a polishing device (2) shown in Figure 2, a grinding and polishing device (6) shown in Figure 21, and a grinding and polishing device (6) shown in Figure 22, The unloading device (W) loading device (3), the processed workpiece (W) carrying device (4), and the loading device (3), the grinding device (1), and the polishing device ( 2) a moving arm portion (51) that moves the workpiece between the unloading device (4) and a handle that is attached to the front end of the operating arm portion (51) and rotates the workpiece (W) to a predetermined angle A configuration diagram of the configuration of the transfer device (5) of the portion (52). The control means (not shown) includes an initial setting item input before the start of machining, and a measuring means (18) provided in each of the grinding device (1), the polishing device (2), and the grinding and polishing device (6). The measuring signal output processing of the measuring tool output and the function of outputting the actuation signal to the respective grinding device (1) and the grinding device (2) and the grinding and polishing device (6), and controlling the rotation of the transfer device (5) Actuate and control the function of the workpiece (W).
研削裝置(1)與前述研磨裝置(2)與研削研磨裝置(6)之組合係可對應於被加工物(W)之形狀與要求之加工精度而適當選擇。例如在圖24(A)係將於圖21顯示之研削研磨裝置(6)配置2台,在角柱狀之被加工物(W)之加工係分別以1台之研削研磨裝置(6)進行側面部(F)之加工與角部(C)之加工。做為角部(C)之表面粗度之要求不高之例,在圖24(B)係將於圖21顯示之研削研磨裝置(6)與於圖1顯示之研削裝置(1)分別配置各1台,在以研削研磨裝置(6)進行側面部(F)之加工後,以研削裝置(1)進行角部(C)之研削加工。此外,做為以於角部(C)之加工有使被加工物(W)以相同速度移送之必要之研削研磨裝置(6)不能進行要求之加工之例,如圖圖24(C)所示,將於圖21顯示之研削研磨裝置(6)與於圖1顯示之研削裝置(1)與與於圖2顯示之研磨裝置(2)分別配置各1台,在以研削研磨裝置(6)進行側面部(F)之加工後,依序以以研削裝置(1)進行之研削加工與以研磨裝置(2)進行之研磨加工來進行角部(C)之加工。The combination of the grinding device (1) and the polishing device (2) and the grinding and polishing device (6) can be appropriately selected in accordance with the shape of the workpiece (W) and the required machining accuracy. For example, in Fig. 24(A), two grinding/polishing devices (6) shown in Fig. 21 are arranged, and in the processing system of the workpieces of the angular column shape (W), the grinding polishing device (6) is used for one side. Processing of part (F) and processing of corner (C). As an example in which the surface roughness of the corner portion (C) is not high, the grinding and polishing device (6) shown in Fig. 21 and the grinding device (1) shown in Fig. 1 are respectively arranged in Fig. 24(B). One of the pieces is subjected to the grinding of the side portion (F) by the grinding and polishing device (6), and then the grinding portion (C) is ground by the grinding device (1). In addition, as for the processing of the corner portion (C), the grinding and polishing device (6) necessary for transferring the workpiece (W) at the same speed cannot be processed as required, as shown in Fig. 24(C). It is to be noted that the grinding and polishing device (6) shown in Fig. 21 and the grinding device (1) shown in Fig. 1 and the polishing device (2) shown in Fig. 2 are respectively disposed one by one, and the grinding device (6) is used. After the processing of the side surface portion (F), the corner portion (C) is processed by the grinding processing by the grinding device (1) and the polishing processing by the polishing device (2).
沒有特別記載之以研削研磨裝置(6)進行之被加工物(W)之運轉方法(把持方法、量測方法、「間歇旋轉」或「連續旋轉」、加工方法等)係與研削裝置(1)與研磨裝置(2)相同,具體之動作與運轉方法參照前述。The operation method (the holding method, the measuring method, the "intermittent rotation" or the "continuous rotation", the processing method, etc.) of the workpiece (W) by the grinding and polishing device (6), and the grinding device (1) The same as the polishing apparatus (2), the specific operation and operation method are as described above.
1...研削裝置1. . . Grinding device
2...研磨裝置2. . . Grinding device
3...搬入裝置3. . . Carrying in device
4...搬出裝置4. . . Carry out device
5...移載裝置5. . . Transfer device
6...研削研磨裝置6. . . Grinding and grinding device
11...基台11. . . Abutment
12...把持手段12. . . Holding means
13...夾持軸13. . . Clamping shaft
14...研削手段A14. . . Grinding means A
15...研削體A15. . . Grinding body A
15a...磨粒層A15a. . . Abrasive layer A
15b...台板15b. . . Platen
16...旋轉盤16. . . Rotating disk
17...旋轉軸17. . . Rotary axis
18...量測手段18. . . Measuring method
18A...量測具A18A. . . Measuring tool A
18B...量測具B18B. . . Measuring tool B
19...移動手段19. . . Mobile means
20...研磨手段A20. . . Grinding means A
21...刷毛材Atwenty one. . . Brush material A
22...旋轉盤twenty two. . . Rotating disk
23...旋轉軸twenty three. . . Rotary axis
24...研削手段Btwenty four. . . Grinding means B
25...磨粒層B25. . . Abrasive layer B
26...旋轉筒26. . . Rotating cylinder
27...旋轉軸27. . . Rotary axis
30...研磨手段B30. . . Grinding means B
31...刷毛材B31. . . Brush material B
32...旋轉筒32. . . Rotating cylinder
33...旋轉軸33. . . Rotary axis
34...按壓具34. . . Press
51...作動臂部51. . . Acting arm
52...把持部52. . . Holding department
W...被加工物W. . . Processed object
F...側面部F. . . Side section
C...角部C. . . Corner
B...胴體部B. . . Body
圖1係本發明之將角柱狀之被加工物加工之研削裝置之俯視圖。Fig. 1 is a plan view showing a grinding device for processing a workpiece having a prismatic shape according to the present invention.
圖2係本發明之將角柱狀之被加工物加工之研磨裝置之俯視圖。Fig. 2 is a plan view showing a polishing apparatus for processing a workpiece having a prismatic shape according to the present invention.
圖3係本發明之將圓柱狀之被加工物加工之研削裝置之俯視圖。Fig. 3 is a plan view showing a grinding device for processing a cylindrical workpiece according to the present invention.
圖4係本發明之將圓柱狀之被加工物加工之研磨裝置之俯視圖。Fig. 4 is a plan view showing a polishing apparatus for processing a cylindrical workpiece according to the present invention.
圖5係顯示配置有本發明之將角柱狀與圓柱狀之被加工物加工之研削裝置與研磨裝置、於前述各裝置將被加工物設定之移載裝置、被加工物之搬入裝置與搬出裝置之第1實施形態之實施例之俯視圖。5 is a view showing a grinding device and a polishing device in which a workpiece having a columnar shape and a columnar shape according to the present invention is disposed, a transfer device for setting a workpiece in each of the above devices, a loading device for loading a workpiece, and a carrying device. A plan view of an embodiment of the first embodiment.
圖6係對位於本發明之研削裝置與研磨裝置之作動開始位置之基台載置被加工物,顯示把持手段與移動手段之配置之前視圖。Fig. 6 is a front view showing the arrangement of the holding means and the moving means for placing the workpiece on the base placed at the start position of the grinding device and the polishing device of the present invention.
圖7係顯示於本發明之研削裝置與研磨裝置之基台載置被加工物且該被加工物之按壓具解除之狀態之側面圖。Fig. 7 is a side view showing a state in which a workpiece is placed on a base of the grinding device and the polishing device of the present invention, and the pressing member of the workpiece is released.
圖8係於本發明之研削裝置與研磨裝置之基台載置被加工物,顯示量測手段之量測具之配置之側面圖。Fig. 8 is a side view showing the arrangement of the measuring instrument for the measuring device by placing the workpiece on the base of the grinding device and the polishing device of the present invention.
圖9係本發明之研削手段之杯型之磨石之前視圖。圖9(A)係從正面觀察之部分剖面圖,圖9(B)係A-A視圖(仰視圖)。Figure 9 is a front elevational view of the cup-type grindstone of the grinding means of the present invention. Fig. 9(A) is a partial cross-sectional view seen from the front, and Fig. 9(B) is an A-A view (bottom view).
圖10係本發明之研削手段之杯型之磨石之前視圖。圖9(A)係從正面觀察之部分剖面圖,圖9(B)係A-A視圖(仰視圖)。Figure 10 is a front elevational view of a cup-type grindstone of the grinding means of the present invention. Fig. 9(A) is a partial cross-sectional view seen from the front, and Fig. 9(B) is an A-A view (bottom view).
圖11係於本發明之研磨手段之1個之旋轉盤具備磨粒之粒度粗之刷毛材與磨粒之粒度細之刷毛材之分區型之研磨刷之前視圖。Fig. 11 is a front view of a partitioning type abrasive brush of a rotary disk having a coarse particle size of abrasive grains and a finely divided brush material of abrasive grains in one of the polishing means of the present invention.
圖12係圖11之仰視圖。Figure 12 is a bottom view of Figure 11.
圖13係顯示本發明之將圓柱狀之被加工物研削之研削手段之滾筒型之磨石之立體圖。Fig. 13 is a perspective view showing a drum type grindstone which is a grinding means for grinding a cylindrical workpiece according to the present invention.
圖14係顯示本發明之將圓柱狀之被加工物研磨之研磨手段之滾筒型之研磨刷之立體圖。Fig. 14 is a perspective view showing a drum type abrasive brush which is a polishing means for polishing a cylindrical workpiece according to the present invention.
圖15係將多結晶矽錠以線鋸切斷形成矽塊(A)(B)(C)時之立體圖。Fig. 15 is a perspective view showing a polycrystalline ruthenium ingot cut by a wire saw to form a block (A) (B) (C).
圖16係於圖15形成之多結晶矽塊(A)(B)(C)之立體圖。Figure 16 is a perspective view of the polycrystalline germanium block (A) (B) (C) formed in Figure 15.
圖17係從平面觀察將單結晶矽錠以線鋸切斷之狀態之說明圖。Fig. 17 is an explanatory view showing a state in which a single crystal bismuth ingot is cut by a wire saw as seen from a plane.
圖18係於圖17形成之單結晶矽塊之立體圖。Figure 18 is a perspective view of the single crystal block formed in Figure 17.
圖19係顯示將頂部與尾部切斷而形成為圓柱狀之單結晶藍寶石錠之立體圖。Fig. 19 is a perspective view showing a single crystal sapphire ingot which is cut into a cylindrical shape by cutting the top and the tail.
圖20係用來說明水晶藍伯特之形狀之說明圖。Figure 20 is an explanatory view for explaining the shape of the crystal Lambert.
圖21係本發明之將角柱狀之被加工物加工之研削研磨裝置之俯視圖。Fig. 21 is a plan view showing a grinding and polishing apparatus for processing a workpiece having a prismatic shape according to the present invention.
圖22係本發明之將圓柱狀之被加工物加工之研削研磨裝置之俯視圖。Fig. 22 is a plan view showing a grinding and polishing apparatus for processing a cylindrical workpiece according to the present invention.
圖23係本發明之將角柱狀之被加工物加工之研削研磨裝置之之變更例之俯視圖。Fig. 23 is a plan view showing a modified example of the grinding and polishing apparatus for processing a workpiece having a prismatic shape according to the present invention.
圖24係顯示配置有本發明之將角柱狀與圓柱狀之被加工物加工之研削裝置與研磨裝置、於前述各裝置將被加工物設定之移載裝置、被加工物之搬入裝置與搬出裝置之第2實施形態之實施例之俯視圖。Fig. 24 is a view showing a grinding device and a polishing device in which a workpiece having a columnar column shape and a column shape is processed according to the present invention, a transfer device for setting a workpiece in each of the above devices, a loading device for loading a workpiece, and a carrying device; A plan view of an embodiment of the second embodiment.
1...研削裝置1. . . Grinding device
2...研磨裝置2. . . Grinding device
3...搬入裝置3. . . Carrying in device
4...搬出裝置4. . . Carry out device
5...移載裝置5. . . Transfer device
51...作動臂部51. . . Acting arm
Claims (15)
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CN104822491A (en) * | 2013-10-02 | 2015-08-05 | 日本碍子株式会社 | Method for producing polished article |
CN103567840B (en) * | 2013-11-13 | 2016-08-31 | 佛山市博科数控机械有限公司 | A kind of mechanical arm multi-station belt sander |
CN105538103B (en) * | 2015-12-04 | 2017-12-22 | 无锡普瑞明思机械制造有限公司 | A kind of hand-held polishing machine of handware |
US10350722B2 (en) | 2016-02-05 | 2019-07-16 | Toshiba Kikai Kabushiki Kaisha | Polishing apparatus |
US10363647B2 (en) | 2016-02-05 | 2019-07-30 | Toshiba Kikai Kabushiki Kaisha | Grinding tool |
JP6976745B2 (en) * | 2017-06-30 | 2021-12-08 | 株式会社ディスコ | Wafer generator |
JP6482618B2 (en) * | 2017-08-22 | 2019-03-13 | Towa株式会社 | Processing apparatus and processing method |
JP6926828B2 (en) * | 2017-08-28 | 2021-08-25 | 村田機械株式会社 | Deburring device |
CN110072668A (en) * | 2017-11-23 | 2019-07-30 | 新东工业株式会社 | The processing unit (plant) and processing method of polygonal column member |
CN108527144B (en) * | 2018-03-28 | 2019-11-15 | 昆山国显光电有限公司 | Substrate grinding device and its grinding method |
CN110480466A (en) * | 2018-05-15 | 2019-11-22 | 浙江永耀机械科技有限公司 | Single travelling is without cambered surface crystal roller polished machine |
DE212018000039U1 (en) * | 2018-09-17 | 2018-10-23 | Suzhou Maichuang Information Technology Co., Ltd. | Automatic grinding machine |
CN109648466B (en) * | 2018-12-28 | 2023-10-10 | 芯思杰技术(深圳)股份有限公司 | Chip wax sealing device |
JP6701418B1 (en) * | 2019-07-26 | 2020-05-27 | Jx金属株式会社 | Indium phosphide substrate and method for manufacturing indium phosphide substrate |
CN110561264B (en) * | 2019-10-10 | 2020-08-25 | 温州冲亚电子科技有限公司 | Crystal bar outer diameter grinding equipment for semiconductor components and parts |
CN112207668A (en) * | 2020-09-26 | 2021-01-12 | 郑州竹蜻蜓电子科技有限公司 | Chip angle grinding device for manufacturing semiconductor device and using method thereof |
CN113319669B (en) * | 2021-06-24 | 2022-04-08 | 福州天瑞线锯科技有限公司 | Polishing method and system for grinding surface of material rod |
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WO2013038573A1 (en) | 2013-03-21 |
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CN103561908B (en) | 2016-09-28 |
JPWO2013038573A1 (en) | 2015-03-23 |
JP5842920B2 (en) | 2016-01-13 |
KR20140062431A (en) | 2014-05-23 |
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