TWI563133B - - Google Patents

Info

Publication number
TWI563133B
TWI563133B TW104120459A TW104120459A TWI563133B TW I563133 B TWI563133 B TW I563133B TW 104120459 A TW104120459 A TW 104120459A TW 104120459 A TW104120459 A TW 104120459A TW I563133 B TWI563133 B TW I563133B
Authority
TW
Taiwan
Application number
TW104120459A
Other languages
Chinese (zh)
Other versions
TW201627544A (zh
Inventor
Morimichi Watanabe
Jun Yoshikawa
Tsutomu Nanataki
Katsuhiro Imai
Tomohiko Sugiyama
Takashi Yoshino
Yukihisa Takeuchi
Kei Sato
Original Assignee
Ngk Insulators Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ngk Insulators Ltd filed Critical Ngk Insulators Ltd
Publication of TW201627544A publication Critical patent/TW201627544A/zh
Application granted granted Critical
Publication of TWI563133B publication Critical patent/TWI563133B/zh

Links

TW104120459A 2013-12-18 2015-06-25 獨立式氮化鎵基板、發光元件及此等之製造方法 TW201627544A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2013260868 2013-12-18
JP2014071342 2014-03-31
JP2014199217A JP5770905B1 (ja) 2013-12-18 2014-09-29 窒化ガリウム自立基板、発光素子及びそれらの製造方法

Publications (2)

Publication Number Publication Date
TW201627544A TW201627544A (zh) 2016-08-01
TWI563133B true TWI563133B (ja) 2016-12-21

Family

ID=54187194

Family Applications (2)

Application Number Title Priority Date Filing Date
TW105136228A TWI662163B (zh) 2013-12-18 2015-06-25 Free-standing gallium nitride substrate, light-emitting element, and manufacturing method thereof
TW104120459A TW201627544A (zh) 2013-12-18 2015-06-25 獨立式氮化鎵基板、發光元件及此等之製造方法

Family Applications Before (1)

Application Number Title Priority Date Filing Date
TW105136228A TWI662163B (zh) 2013-12-18 2015-06-25 Free-standing gallium nitride substrate, light-emitting element, and manufacturing method thereof

Country Status (2)

Country Link
JP (2) JP5770905B1 (ja)
TW (2) TWI662163B (ja)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105830237B (zh) * 2013-12-18 2019-09-06 日本碍子株式会社 发光元件用复合基板及其制造方法
CN107208312B (zh) 2015-01-29 2019-10-01 日本碍子株式会社 自立基板、功能元件及其制造方法
WO2017057271A1 (ja) * 2015-09-30 2017-04-06 日本碍子株式会社 エピタキシャル成長用配向アルミナ基板
JP6681406B2 (ja) * 2015-09-30 2020-04-15 日本碍子株式会社 エピタキシャル成長用配向アルミナ基板
WO2017086026A1 (ja) 2015-11-16 2017-05-26 日本碍子株式会社 配向焼結体の製法
JP6688109B2 (ja) * 2016-02-25 2020-04-28 日本碍子株式会社 面発光素子、外部共振器型垂直面発光レーザー、および面発光素子の製造方法
JP6648253B2 (ja) 2016-02-25 2020-02-14 日本碍子株式会社 多結晶窒化ガリウム自立基板及びそれを用いた発光素子
WO2017169622A1 (ja) * 2016-03-29 2017-10-05 日本碍子株式会社 自立基板および積層体
JP6639317B2 (ja) * 2016-04-21 2020-02-05 日本碍子株式会社 13族元素窒化物結晶の製造方法および種結晶基板
JP6846913B2 (ja) * 2016-11-11 2021-03-24 日本碍子株式会社 広波長域発光素子および広波長域発光素子の作製方法
TWI621249B (zh) 2017-03-27 2018-04-11 英屬開曼群島商錼創科技股份有限公司 微型發光二極體及顯示面板
TWI632673B (zh) * 2017-07-11 2018-08-11 錼創科技股份有限公司 微型發光元件與顯示裝置
CN111052414B (zh) 2017-08-24 2023-07-21 日本碍子株式会社 13族元素氮化物层、自立基板以及功能元件
US11309455B2 (en) 2017-08-24 2022-04-19 Ngk Insulators, Ltd. Group 13 element nitride layer, free-standing substrate and functional element
DE112017007796B4 (de) 2017-08-24 2023-09-14 Ngk Insulators, Ltd. Schichten eines Kristalls aus einem Nitrid eines Elements der Gruppe 13, selbsttragende Substrate, funktionelle Vorrichtungen und Verbundsubstrate
WO2019039246A1 (ja) 2017-08-24 2019-02-28 日本碍子株式会社 13族元素窒化物層、自立基板および機能素子
JP7185123B2 (ja) * 2017-12-26 2022-12-07 日亜化学工業株式会社 光学部材及び発光装置
JP7147644B2 (ja) * 2019-03-18 2022-10-05 豊田合成株式会社 Iii族窒化物半導体の製造方法
CN114651092B (zh) * 2019-11-21 2024-08-23 日本碍子株式会社 13族元素氮化物结晶层、自立基板及功能元件
CN111607825A (zh) * 2020-06-02 2020-09-01 无锡吴越半导体有限公司 衬底、基于所述衬底的自支撑GaN单晶及其制备方法
CN116364819B (zh) * 2023-05-31 2023-12-15 江西兆驰半导体有限公司 发光二极管外延片及其制备方法、led

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200925340A (en) * 2007-10-04 2009-06-16 Sumitomo Electric Industries GaN epitaxial substrate, semiconductor device and methods for manufacturing gan epitaxial substrate and semiconductor device

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JP3410863B2 (ja) * 1995-07-12 2003-05-26 株式会社東芝 化合物半導体装置及び化合物半導体発光装置
JP3864870B2 (ja) * 2001-09-19 2007-01-10 住友電気工業株式会社 単結晶窒化ガリウム基板およびその成長方法並びにその製造方法
US7221037B2 (en) * 2003-01-20 2007-05-22 Matsushita Electric Industrial Co., Ltd. Method of manufacturing group III nitride substrate and semiconductor device
JP2004359495A (ja) * 2003-06-04 2004-12-24 Ngk Insulators Ltd エピタキシャル膜用アルミナ基板
JP4341702B2 (ja) * 2007-06-21 2009-10-07 住友電気工業株式会社 Iii族窒化物系半導体発光素子
JP4981602B2 (ja) * 2007-09-25 2012-07-25 パナソニック株式会社 窒化ガリウム基板の製造方法
US9012253B2 (en) * 2009-12-16 2015-04-21 Micron Technology, Inc. Gallium nitride wafer substrate for solid state lighting devices, and associated systems and methods

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200925340A (en) * 2007-10-04 2009-06-16 Sumitomo Electric Industries GaN epitaxial substrate, semiconductor device and methods for manufacturing gan epitaxial substrate and semiconductor device

Also Published As

Publication number Publication date
JP2016001738A (ja) 2016-01-07
TWI662163B (zh) 2019-06-11
TW201627544A (zh) 2016-08-01
JP5770905B1 (ja) 2015-08-26
JP2015199635A (ja) 2015-11-12
TW201708635A (zh) 2017-03-01

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