TWI563133B - - Google Patents
Info
- Publication number
- TWI563133B TWI563133B TW104120459A TW104120459A TWI563133B TW I563133 B TWI563133 B TW I563133B TW 104120459 A TW104120459 A TW 104120459A TW 104120459 A TW104120459 A TW 104120459A TW I563133 B TWI563133 B TW I563133B
- Authority
- TW
- Taiwan
Links
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013260868 | 2013-12-18 | ||
| JP2014071342 | 2014-03-31 | ||
| JP2014199217A JP5770905B1 (ja) | 2013-12-18 | 2014-09-29 | 窒化ガリウム自立基板、発光素子及びそれらの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201627544A TW201627544A (zh) | 2016-08-01 |
| TWI563133B true TWI563133B (ja) | 2016-12-21 |
Family
ID=54187194
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW104120459A TW201627544A (zh) | 2013-12-18 | 2015-06-25 | 獨立式氮化鎵基板、發光元件及此等之製造方法 |
| TW105136228A TWI662163B (zh) | 2013-12-18 | 2015-06-25 | Free-standing gallium nitride substrate, light-emitting element, and manufacturing method thereof |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW105136228A TWI662163B (zh) | 2013-12-18 | 2015-06-25 | Free-standing gallium nitride substrate, light-emitting element, and manufacturing method thereof |
Country Status (2)
| Country | Link |
|---|---|
| JP (2) | JP5770905B1 (ja) |
| TW (2) | TW201627544A (ja) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2015093335A1 (ja) * | 2013-12-18 | 2015-06-25 | 日本碍子株式会社 | 発光素子用複合基板及びその製造方法 |
| DE112016000548B4 (de) | 2015-01-29 | 2020-10-15 | Ngk Insulators, Ltd. | Selbsttragendes Substrat, Verfahren zu dessen Herstellung und Verwendung des Substrats |
| WO2017057272A1 (ja) * | 2015-09-30 | 2017-04-06 | 日本碍子株式会社 | エピタキシャル成長用配向アルミナ基板 |
| JP6684815B2 (ja) * | 2015-09-30 | 2020-04-22 | 日本碍子株式会社 | エピタキシャル成長用配向アルミナ基板 |
| CN108349823B (zh) | 2015-11-16 | 2021-06-01 | 日本碍子株式会社 | 取向烧结体的制造方法 |
| EP3421648B1 (en) * | 2016-02-25 | 2023-01-25 | NGK Insulators, Ltd. | Polycrystalline gallium nitride self-supported substrate and light emitting element using the same |
| JP6688109B2 (ja) * | 2016-02-25 | 2020-04-28 | 日本碍子株式会社 | 面発光素子、外部共振器型垂直面発光レーザー、および面発光素子の製造方法 |
| WO2017169622A1 (ja) * | 2016-03-29 | 2017-10-05 | 日本碍子株式会社 | 自立基板および積層体 |
| JP6639317B2 (ja) * | 2016-04-21 | 2020-02-05 | 日本碍子株式会社 | １３族元素窒化物結晶の製造方法および種結晶基板 |
| JP6846913B2 (ja) * | 2016-11-11 | 2021-03-24 | 日本碍子株式会社 | 広波長域発光素子および広波長域発光素子の作製方法 |
| TWI621249B (zh) * | 2017-03-27 | 2018-04-11 | 英屬開曼群島商錼創科技股份有限公司 | 微型發光二極體及顯示面板 |
| TWI632673B (zh) * | 2017-07-11 | 2018-08-11 | 錼創科技股份有限公司 | 微型發光元件與顯示裝置 |
| CN111052414B (zh) | 2017-08-24 | 2023-07-21 | 日本碍子株式会社 | 13族元素氮化物层、自立基板以及功能元件 |
| US11309455B2 (en) | 2017-08-24 | 2022-04-19 | Ngk Insulators, Ltd. | Group 13 element nitride layer, free-standing substrate and functional element |
| WO2019038892A1 (ja) | 2017-08-24 | 2019-02-28 | 日本碍子株式会社 | １３族元素窒化物層、自立基板および機能素子 |
| CN111052415B (zh) | 2017-08-24 | 2023-02-28 | 日本碍子株式会社 | 13族元素氮化物层、自立基板以及功能元件 |
| JP7185123B2 (ja) * | 2017-12-26 | 2022-12-07 | 日亜化学工業株式会社 | 光学部材及び発光装置 |
| JP7147644B2 (ja) * | 2019-03-18 | 2022-10-05 | 豊田合成株式会社 | Ｉｉｉ族窒化物半導体の製造方法 |
| CN111607825A (zh) * | 2020-06-02 | 2020-09-01 | 无锡吴越半导体有限公司 | 衬底、基于所述衬底的自支撑GaN单晶及其制备方法 |
| CN116364819B (zh) * | 2023-05-31 | 2023-12-15 | 江西兆驰半导体有限公司 | 发光二极管外延片及其制备方法、led |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200925340A (en) * | 2007-10-04 | 2009-06-16 | Sumitomo Electric Industries | GaN epitaxial substrate, semiconductor device and methods for manufacturing gan epitaxial substrate and semiconductor device |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3410863B2 (ja) * | 1995-07-12 | 2003-05-26 | 株式会社東芝 | 化合物半導体装置及び化合物半導体発光装置 |
| JP3864870B2 (ja) * | 2001-09-19 | 2007-01-10 | 住友電気工業株式会社 | 単結晶窒化ガリウム基板およびその成長方法並びにその製造方法 |
| US7221037B2 (en) * | 2003-01-20 | 2007-05-22 | Matsushita Electric Industrial Co., Ltd. | Method of manufacturing group III nitride substrate and semiconductor device |
| JP2004359495A (ja) * | 2003-06-04 | 2004-12-24 | Ngk Insulators Ltd | エピタキシャル膜用アルミナ基板 |
| JP4341702B2 (ja) * | 2007-06-21 | 2009-10-07 | 住友電気工業株式会社 | Ｉｉｉ族窒化物系半導体発光素子 |
| JP4981602B2 (ja) * | 2007-09-25 | 2012-07-25 | パナソニック株式会社 | 窒化ガリウム基板の製造方法 |
| US9012253B2 (en) * | 2009-12-16 | 2015-04-21 | Micron Technology, Inc. | Gallium nitride wafer substrate for solid state lighting devices, and associated systems and methods |
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2014
- 2014-09-29 JP JP2014199217A patent/JP5770905B1/ja active Active
-
2015
- 2015-06-24 JP JP2015126714A patent/JP2016001738A/ja active Pending
- 2015-06-25 TW TW104120459A patent/TW201627544A/zh unknown
- 2015-06-25 TW TW105136228A patent/TWI662163B/zh active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200925340A (en) * | 2007-10-04 | 2009-06-16 | Sumitomo Electric Industries | GaN epitaxial substrate, semiconductor device and methods for manufacturing gan epitaxial substrate and semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI662163B (zh) | 2019-06-11 |
| TW201627544A (zh) | 2016-08-01 |
| JP5770905B1 (ja) | 2015-08-26 |
| JP2016001738A (ja) | 2016-01-07 |
| TW201708635A (zh) | 2017-03-01 |
| JP2015199635A (ja) | 2015-11-12 |